CN102053500A - Method for preventing adhesive in nozzle from crystallizing in photoetching technology - Google Patents
Method for preventing adhesive in nozzle from crystallizing in photoetching technology Download PDFInfo
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- CN102053500A CN102053500A CN2009101984929A CN200910198492A CN102053500A CN 102053500 A CN102053500 A CN 102053500A CN 2009101984929 A CN2009101984929 A CN 2009101984929A CN 200910198492 A CN200910198492 A CN 200910198492A CN 102053500 A CN102053500 A CN 102053500A
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Abstract
The invention discloses a method for preventing adhesive in a nozzle from crystallizing in photoetching technology. The method comprises the following steps: spraying adhesive after empty spraying; after spraying the adhesive, resorbing the adhesive; and putting the nozzle for spraying the adhesive in a solvent. Since the resorbed adhesive in the nozzle is isolated from the atmospheric environment by using the solvent, the quantity of air reacting with the adhesive is reduced, thereby prolonging the empty spraying period, or under ideal conditions, empty spraying can be carried out to remove the crystallized adhesive before use next time, thereby reducing the number of times of empty spraying, lowering the cost of the photoetching technology and lowering the manufacturing cost of semiconductor devices.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, be specifically related to a kind of method that prevents the interior glue crystallization of nozzle in the photoetching process.
Background technology
Photoetching process is a kind of basic operation that is used for removing the specific region of defined on the crystal column surface layer.This technology is a very important procedure in the semiconductor processes, and it is the technological process that is used for setting up figure on different devices and circuit surface.The target of this technological process has two: at first be to set up as far as possible figure near size that design rule requires at crystal column surface; Second target is at the correct positioning pattern of crystal column surface.The entire circuit figure must be properly positioned to crystal column surface, and the relative position on the circuitous pattern between independent each part also must be correct.The final figure of semiconductor devices is in layer to be superposeed at crystal column surface according to specific order by a plurality of mask to set up.
Before photoetching process, at first on mask, form required figure, by photoetching process needed figure transfer is arrived each layer of crystal column surface afterwards.Figure transfer was finished by two steps.At first, figure is transferred to photoresist coating.Photoresist is a kind of photoactive substance, can cause the variation of himself character and structure after exposure.The part that is exposed is become solable matter (positive glue) or is become non-soluble substance (negative glue) by solable matter by non-soluble substance.Can remove solable matter by developer, thereby stay needed figure at photoresist coating.Figure transfer is the transfer from photoresist coating to the crystal column surface layer for the second time.When the part that the crystal column surface layer is not covered by photoresist by lithographic method was removed, figure transfer had just taken place.
Usually, comprise four kinds of basic compositions in the photoresist: polymkeric substance, solvent, emulsion and adjuvant.To the influential composition of the photosensitivity of photoresist is some particular polymer to light and energy-sensitive.In negative glue, polymkeric substance becomes polymerization state by non-polymeric state after exposing, and the polymkeric substance of polymerization state is a kind of anti-etching material.In positive glue, polymkeric substance is insoluble relatively, and after with suitable energy exposure, polymkeric substance is converted to solvable state.Solvent is the composition of capacity maximum in the photoresist, and solvent makes photoresist be in liquid state, and makes photoresist be coated in crystal column surface by the mode of rotation.Photosensitizer is used for producing or controlling the specific reaction of polymkeric substance, specifically is used for the wave spectrum scope of limited reactions energy or reaction energy is restricted to a certain specific wavelength, makes polymkeric substance only react with the energy of this specific wavelength.Adjuvant and photoresist mix the result who reaches specific.Some negative glue include coloring agent, and it is used for absorbing in the photoresist shallow layer and control light.Positive glue may have the antilysis system of chemistry.The part that these adjuvants can stop photoresist not to be exposed is dissolved in developing process.
Photoetching process is usually included in master operations such as crystal column surface gluing, exposure and development.
During the spin coating photoresist, at first carry out the sky spray, will in nozzle, spray with the glue of air reaction, shown in Figure 1A; Then as the center spray photoresist of wafer that Figure 1B is shown in, and with certain rotating speed rotation wafer, thereby set up thin, evenly and do not have a photoresist coating of defective at crystal column surface.The control accuracy of glue amount directly influences the economic benefit of manufacturing enterprise in the spin coating process, also is the key factor that influences the glued membrane quality.Because the glue drip sometimes in the nozzle is stayed in the lower photoresist small piece of land surrounded by water after sprinkling of viscosity, cause inaccurate or substrate pickup for the glue amount.So after the spray glue operation of shown in Fig. 1 C, finishing setting, the resorption photoresist, thus drip avoided, shown in Fig. 1 D.
Exposure be by exposure lamp or other radiation source as exposure light source photolithography gel coating, thereby with figure transfer to photoresist coating.When exposure energy shines on the photoresist, make resist exposure, but also reflect simultaneously, thereby produce crater effect and standing wave effect in the upper and lower surface generation of photoresist coating, make and do not wish that the photoresist that exposes is exposed, perhaps the sidewall at photoresist produces wavy out-of-flatness.Energy is in the reflection of photoresist coating lower surface when exposing in order to reduce, increase the absorption of photoresist coating as much as possible to exposure energy, avoid crater effect and standing wave effect, before the spin coating photoresist, can form bottom antireflective coating (BARC, Bottom Anti-Reflective Coating) at crystal column surface.If employed antireflecting coating is to absorb directly into the organic material of penetrating light, then use and the similar mode of spin coating photoresist are in the crystal column surface spin coating.Simultaneously, energy is in the reflection of photoresist coating upper surface when exposing in order to reduce, increase the absorption of photoresist coating as much as possible to exposure energy, avoid crater effect and standing wave effect, after the spin coating photoresist, can form reflection coating provided (TARC, Top Anti-Reflective Coating) in photoresist surface spin coating.This coating can't absorbing light, but eliminates reflection by the phase cancellation between the light.
In immersion lithography, photoresist must expose in a kind of liquid solution.Because the composition of conventional lithography glue shows solubility and separates out behavior thus in aqueous solution, thereby polluted aqueous solution and reduced the overall performance of photoetching process, contaminated aqueous solution also may further stain the front lens and the silicon wafer bearing table of litho machine, aqueous solution also can infilter photoresist coating, cause photoresist to expand and change its photochemical properties, thereby traditional photoresist can not be directly applied for immersion exposure.This moment, effective solution was stack one deck extra top coat, entered aqueous solution and prevented that aqueous solution from infiltrating in the photoresist coating to prevent that photoresist from becoming to analyze.This top coat also can the spin coating mode be formed on the photoresist coating.
More than the forming process of all coatings all the generation type with photoresist is the same, i.e. spin coating forms.After the spray glue operation of finishing setting, the resorption glue, thus avoid drip.The resorption function has also reduced the exposed surface of glue in the nozzle when avoiding drip, however, the glue surface of nozzle place resorption still can directly contact with air, and glue and air are reacted, thereby makes the glue crystallization, forms hard sphere.Will fall crystal column surface when using next time, the photoresist that makes spin coating form is inhomogeneous, influences the yields of etching technics, even finally has influence on the performance of device.Therefore, in the prior art,, need periodically carry out the sky spray in order to reduce the crystallization of glue.Usually the cycle of empty spray is per 1800 seconds or 3600 seconds or 7200 seconds empty spray 1cc.Before using next time, also to carry out once empty spray, fall crystal column surface to avoid possible crystallization.
Just as described above, in photoetching process, need the coating of spin coating may comprise primer, bottom antireflective coating, photoresist coating, reflection coating provided or top coat.If carry out the sky spray, then can cause a large amount of glue wastes, thereby increase the manufacturing cost of semiconductor devices according to method of the prior art.
Summary of the invention
The invention provides a kind of method that prevents the interior glue crystallization of nozzle in the photoetching process, reduce empty spray number of times, reduce the manufacturing cost of semiconductor devices.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of method that prevents the interior glue crystallization of nozzle in the photoetching process, this method comprises: spray glue after the sky spray; The glued bundle of spray back resorption glue; The nozzle that will be used for spraying glue places solvent.
In a preferred embodiment of the invention, described solvent and described glue mix.
Preferably, when described glue was organic material, described solvent was that propylene glycol monomethyl ether, 1-Methoxy-2-propyl acetate or propylene glycol monomethyl ether and 1-Methoxy-2-propyl acetate mix the solvent that obtains, and for example mixes the solvent that obtains with 7: 3 ratio.Wherein, described organic material is the organic material that is used to form photoresist coating, bottom antireflective coating, Topcoating, siliceous bottom antireflective coating.
Preferably, when described glue was water wetted material, described solvent was a deionized water.Wherein, described water wetted material is the water wetted material that is used to form reflection coating provided.
Compared with prior art, technical scheme provided by the present invention is at first sprayed glue after the sky spray, and at the glued resorption glue afterwards of restrainting of spray; The nozzle that will be used for spraying glue then places solvent.Because using solvent keeps apart the glue and the atmospheric environment of resorption in the nozzle, reduced air capacity with the glue reaction, thereby can prolong the cycle of empty spray, perhaps in the ideal case, only need before using next time, carry out the glue that crystallization is removed in empty spray, thereby reduced the number of times of empty spray, reduced the cost of photoetching process, the result has reduced the manufacturing cost of semiconductor devices.
Description of drawings
Figure 1A-1D is the use of nozzle in the prior art;
Fig. 2 is for preventing in the photoetching process method flow diagram of glue crystallization in the nozzle according to of the present invention;
Fig. 3 A-3E is for preventing the use of nozzle in the method for glue crystallization in the nozzle in the photoetching process according to of the present invention.
Embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
The method that prevents the interior glue crystallization of nozzle in the photoetching process provided by the invention is sprayed glue after the sky spray; And at the glued bundle of spray back resorption glue; The nozzle that will be used for spraying glue then places solvent.Because using solvent keeps apart the glue and the atmospheric environment of resorption in the nozzle, reduced air capacity with the glue reflection, thereby can prolong the cycle of empty spray, perhaps in the ideal case, only need before using next time, carry out the glue that crystallization is removed in empty spray, thereby reduced the number of times of empty spray, reduced the cost of photoetching process, the result has reduced the manufacturing cost of semiconductor devices.
Describe in detail according to of the present invention below in conjunction with Fig. 2 and Fig. 3 and to prevent in the photoetching process method of glue crystallization in the nozzle.
Fig. 2 is for preventing in the photoetching process method flow diagram of glue crystallization in the nozzle according to of the present invention, and Fig. 3 A-3E is for preventing the use of nozzle in the method for glue crystallization in the nozzle in the photoetching process according to of the present invention.As shown in Figure 2, this method may further comprise the steps:
Step 200 is sprayed glue (shown in Fig. 3 A-3B) after the sky spray.
The purpose of empty spray is the glue with air reaction is sprayed from nozzle, thereby avoids the glue of crystallization to drop to the homogeneity of the follow-up photoresist coating of influence on the crystal column surface, thereby influences each follow-up processing step.
In this step, the glue of sprinkling also comprises the glue that is used to form bottom antireflective coating, reflection coating provided, Topcoating or the like except that various types of photoresists.
Step 202, the glued bundle of spray back resorption glue (Fig. 3 C-3D).
The purpose of this step is to prevent the glue drip, causes the inaccurate or substrate pickup for the glue amount.
Step 204, the nozzle that will be used for spraying glue places solvent (shown in Fig. 3 E).
In this step, be not particularly limited, but the solvent that speckles with on the nozzle during glue for fear of spray exerts an influence the solvent that solvent preferably mixes with employed glue to employed glue for choice of Solvent.
When the glue that uses is organic material, solvent can be OK73, even solvent propylene glycol monomethyl ether (PGME) with photoresist and 1-Methoxy-2-propyl acetate (PGMEA) mix the solvent that obtains with 7: 3 ratio, also can be that PGME and PGMEA mix the solvent that obtains with other ratio, or single PGME or PGMEA.Wherein, organic material can be photoresist, be used to form the organic material of bottom antireflective coating, Topcoating or siliceous bottom antireflective coating etc.
When the glue that uses was water wetted material, solvent can be a deionized water.Water wetted material for example can be the water wetted material that is used to form reflection coating provided etc.
Owing in the step 204 nozzle is placed solvent, make resorption photoresist only with nozzle in little air react, therefore can prolong the cycle of sky spray, perhaps in the ideal case, only need before using next time, carry out the empty glue that removes crystallization that sprays and just can directly use.
Be example to form primer and photoresist coating below, describe the method that prevents the interior glue crystallization of nozzle in the photoetching process of the present invention in detail.
At first, in order to obtain smooth uniform photoresist coating and make photoresist and wafer between good adhesiveness is arranged, before gluing, wafer is carried out pre-service usually.The normally primary dewatering baking of the pretreated first step in the atmosphere of vacuum or drying nitrogen, is toasted wafer with certain high temperature.The purpose in this step is to remove the moisture of crystal column surface absorption.
Be right after the normally spin coating primer after baking.The purpose of spin coating primer is in order to strengthen the adhesion of photoresist at crystal column surface.Common employed primer is hexamethyldisilane (HMDS).Specifically, from the solvent of placing primer device nozzle, take out the primer device, carry out the sky spray, the primer of crystallization is sprayed from nozzle, use the primer device to spray primer at the crystal column surface through cleaning afterwards, spray is glued restraints back resorption primer, and the nozzle of primer device is placed this solvent once more.This solvent can be OK73, and promptly PGME and PGMEA mix the solvent that obtains with 7: 3 ratio, also can be that PGME and PGMEA mix the solvent that obtains with other ratio, or single PGME or PGMEA.Then, make primer spread over whole crystal column surface equably, improve the rotating speed of wafer then so that make the primer drying with certain rotating speed rotation wafer.
Then at the crystal column surface gluing.At first with vacuum cup wafer is fixed, sucker is a hollow metal dish flat, that link to each other with vacuum pipeline.Chuck surface has many apertures, and in the time of above wafer is placed on, the suction of vacuum makes wafer closely contact with sucker.Then, from the solvent of placing the photoresist nozzle, take out nozzle, carry out the sky spray, the photoresist of crystallization is sprayed from nozzle, afterwards predetermined glue amount is sprayed at crystal column surface, the glued bundle of spray back resorption photoresist, and once more nozzle is placed this solvent is so that with the photoresist and the air insulated of resorption.Afterwards, the torque that applies on the sucker makes it rise to maximum rotative speed rapidly by a controlled speed.After wafer rotates a predetermined amount of time with maximum rotative speed, be decelerated in a controlled manner and stop, thereby form smooth and uniform photoresist coating.
After the spin coating photoresist, wafer must experience once soft baking, or baking before claiming.Soft baking be a kind of be the heating process of purpose with a part of solvent of evaporation in the photoresist.Evaporating solvent has two reasons.The main effect of solvent is to allow photoresist be coated with skim at crystal column surface, after this effect is finished, and the existence meeting interfere with subsequent technological process of solvent.Therefore solvent meeting absorbing light in the photoresist, and then normal chemical change in the stray light sensitive polymer need reduce the influence of solvent to exposure process as far as possible.The oven dry that second reason is photoresist can help photoresist and crystal column surface better to cohere.Time and temperature are the parameters of soft baking.
Wafer after the soft baking is exposed.The first step of exposure is required figure locate on crystal column surface or to aim at, second go on foot be by exposure lamp or other radiation source with figure transfer to photoresist coating.Wafer after the exposure need carry out the back baking, and its purpose is to reduce standing wave effect.The time and the temperature of back baking are determined by baking method, conditions of exposure and photoresist chemistry.
Record the exposure and the unexposed area of device or circuit pattern on the wafer after the baking of back.By the chemolysis of polymerization photoresist is not made pattern development.On photoresist, successfully make pattern development will depend on the exposure mechanism of photoresist.For negative glue, decompose in developer solution the zone of convergency of photoresist.For example, can use the developer solution of development dimethylbenzene as negative glue.And for positive glue, there are different dissolution rates the zone of convergency with the zone of convergency not in developer solution, is about 1: 4, that is to say always to dissolve some photoresists from the zone of convergency in development.Therefore, the long meeting of developer solution that overuses or development time causes photoresist too thin and can not use.The result might cause perk or fracture in etching.The developer solution of positive glue has two kinds: alkali-aqueous solution and non-ionic solution.Alkali-aqueous solution can be NaOH or potassium hydroxide.Soft baking time and temperature, exposure, solution level, time, temperature and developing method all can exert an influence to developing result.
Need wafer is dried by the fire firmly after developing, its purpose is the same with soft baking in fact, solidifies photoresist by the evaporation of solvent exactly.In addition, the special purpose of hard baking is to make photoresist and crystal column surface that good cohesiveness is arranged.The parameter of this step also is time of curing and temperature.
After developing and curing, to finish the quality inspection first time of photo etched mask technology exactly, inspect after promptly developing.Its purpose is to distinguish those the wafer of very low possibility by final mask check, and shop characteristic and technology controlling and process data are provided; And sort out the wafer that to reform.
To carrying out etching by the wafer of inspecting after developing, remove residual photoresist, carry out then inspecting after the etching, carry out other PROCESS FOR TREATMENT for inspecting qualified wafer after the etching.
By the above as can be seen, technical scheme provided by the present invention is at first sprayed glue after the sky spray, and at the glued bundle of spray back resorption glue; The nozzle that will be used for spraying glue then places solvent.Because using solvent keeps apart the glue and the atmospheric environment of resorption in the nozzle, reduced air capacity with the glue reaction, thereby can prolong the cycle of empty spray, perhaps in the ideal case, only need before using next time, carry out the glue that crystallization is removed in empty spray, thereby reduced the number of times of empty spray, reduced the cost of photoetching process, the result has reduced the manufacturing cost of semiconductor devices.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. method that prevents glue crystallization in the nozzle in the photoetching process, this method comprises:
After the sky spray, spray glue;
The glued bundle of spray back resorption glue;
The nozzle that will be used for spraying glue places solvent.
2. the method that prevents the interior glue crystallization of nozzle in the photoetching process as claimed in claim 1 is characterized in that described solvent and described glue mix.
3. the method that prevents the interior glue crystallization of nozzle in the photoetching process as claimed in claim 2, it is characterized in that, described glue is an organic material, and described solvent is that propylene glycol monomethyl ether, 1-Methoxy-2-propyl acetate or propylene glycol monomethyl ether and 1-Methoxy-2-propyl acetate mix the solvent that obtains.
4. the method that prevents the interior glue crystallization of nozzle in the photoetching process as claimed in claim 3 is characterized in that, described solvent is that propylene glycol monomethyl ether and 1-Methoxy-2-propyl acetate mix the solvent that obtains with 7: 3 ratio.
5. the method that prevents glue crystallization in the nozzle in the photoetching process as claimed in claim 3 is characterized in that, described organic material is the organic material that is used to form photoresist coating, bottom antireflective coating, Topcoating or siliceous bottom antireflective coating.
6. the method that prevents the interior glue crystallization of nozzle in the photoetching process as claimed in claim 2 is characterized in that described glue is a water wetted material, and described solvent is a deionized water.
7. the method that prevents the interior glue crystallization of nozzle in the photoetching process as claimed in claim 6 is characterized in that described water wetted material is the water wetted material that is used to form reflection coating provided.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101984929A CN102053500A (en) | 2009-11-05 | 2009-11-05 | Method for preventing adhesive in nozzle from crystallizing in photoetching technology |
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| CN2009101984929A CN102053500A (en) | 2009-11-05 | 2009-11-05 | Method for preventing adhesive in nozzle from crystallizing in photoetching technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105446081A (en) * | 2014-09-22 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing photoresist crystallization |
| TWI618137B (en) * | 2014-04-30 | 2018-03-11 | 東京威力科創股份有限公司 | Substrate liquid processing device and substrate liquid processing method |
| CN112698553A (en) * | 2021-01-14 | 2021-04-23 | 陕西彩虹新材料有限公司 | Method for improving adhesion between photoresist and wafer |
| CN114624017A (en) * | 2022-05-16 | 2022-06-14 | 宁波润华全芯微电子设备有限公司 | Nozzle monitoring and detecting system |
-
2009
- 2009-11-05 CN CN2009101984929A patent/CN102053500A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI618137B (en) * | 2014-04-30 | 2018-03-11 | 東京威力科創股份有限公司 | Substrate liquid processing device and substrate liquid processing method |
| CN105446081A (en) * | 2014-09-22 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing photoresist crystallization |
| CN105446081B (en) * | 2014-09-22 | 2019-11-08 | 中芯国际集成电路制造(上海)有限公司 | The method for preventing photoresist from crystallizing |
| CN112698553A (en) * | 2021-01-14 | 2021-04-23 | 陕西彩虹新材料有限公司 | Method for improving adhesion between photoresist and wafer |
| CN114624017A (en) * | 2022-05-16 | 2022-06-14 | 宁波润华全芯微电子设备有限公司 | Nozzle monitoring and detecting system |
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Application publication date: 20110511 |