CN102043689B - Fault tolerance design method for solid-state memory device - Google Patents
Fault tolerance design method for solid-state memory device Download PDFInfo
- Publication number
- CN102043689B CN102043689B CN2010106079644A CN201010607964A CN102043689B CN 102043689 B CN102043689 B CN 102043689B CN 2010106079644 A CN2010106079644 A CN 2010106079644A CN 201010607964 A CN201010607964 A CN 201010607964A CN 102043689 B CN102043689 B CN 102043689B
- Authority
- CN
- China
- Prior art keywords
- particle
- flash memory
- flash
- solid
- redundant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
The invention discloses a fault tolerance design method for a solid-state memory device, in which standby redundant memory particles are additionally added in design of a circuit board of a memory device, when the device has flash memory fault in production back-end test or usage, the failed particles are substituted by the redundant memory particles, thereby ensuring that excellent rate of production of the memory device cannot be influenced even encapsulation test is not performed on the particles; simultaneously, service life of the device is effectively prolonged by adding the redundant memory particles in the method, when the flash memory particles in the device reach certain service life, the flash memory particles are substituted by the redundant particles or idle particles, so that the service life of the device is effectively prolonged through the continuous substitution. The method can be implemented in process of device production test and/or usage.
Description
Technical field
The present invention relates to a kind of method for designing of solid storage device, specifically relate to a kind of fault-tolerant design method of solid storage device.
Background technology
At present, solid storage device is progressively accepted by vast memory device user, its with conventional memory device particularly hard disk compare, have many superiority that it can not be compared, for example read and write speed, performance, low-power consumption or the like.But shortcoming such as price that it is expensive and storage times are limited has restricted the application widely of this type of memory device.
NAND type Flash particle is present widely used solid storage medium, and existing is that example describes with this type of storage medium.This type storage medium comes store information through the electric charge that injects and wipe grid, and because of the cause of manufacturing process, grid has certain mission life, and when erasing times reached some, its work became unstable thereby can not continue and uses.The equipment manufacturers of rear end prevent that through the storage particle is done wear leveling data from too concentrating on the same Flash particle, thereby prolong the whole service life of equipment as much as possible.
The composition form of NAND type Flash particle is, a particle is formed by a plurality of, and each piece is formed by a plurality of pages again; The minimum operation unit of wiping electric charge is a piece, and the minimum operation unit of iunjected charge (programming) is a page or leaf.A solid storage device then comprises many Flash particles.Another characteristic of NAND type Flash is, must wipe one whole earlier, could carry out programming operation to page or leaf.The equipment manufacturers of rear end are programmed into the page data that newly writes on the free block, wipe old then, and old is wiped free of the back to add free block formation etc. to be used.
To above analysis, be that institute of rear end equipment manufacturer can not determine and optimize about the price of costliness and the caused problem of its manufacturing process, each tame manufacturer can take some technical method at present, like the wear leveling algorithm of optimizing, the life-span of prolongation equipment.But this can not tackle the problem at its root, and when a Flash particle in the middle of the solid storage device finally went wrong and can not use, whole memory device had to scrap.Each manufacturer all can drop into huge energy and filter out mass ratio preferably, to prolong the serviceable life of solid storage device as far as possible when selecting the Flash particle for this reason.This has increased cost undoubtedly.
Summary of the invention
The object of the present invention is to provide a kind of fault-tolerant design method that is used for solid storage device, this method can realize reducing the expense of device fabrication test, can guarantee the acceptance rate of equipment again, can realize prolonging simultaneously the memory device purpose in serviceable life again.
A kind of fault-tolerant design method that is used for solid storage device provided by the invention is provided with at least one redundant flash memory particle in flash array, in device fabrication test and/or use, carry out fault-tolerant design, it is characterized in that,
Fault-tolerant design method in the device fabrication test comprises the steps:
(A1) the solid-state storage processor was checked with the flash memory particle working as in the flash array of solid state memory device;
(A2) judge to work as whether break down with the flash memory particle, if, then it is carried out mark, and record trouble information; Change step (A3) over to, otherwise, step (A3) directly got into;
(A3) judge in the flash array when whether complete inspection finishes with the flash memory particle, if, change step (A4) over to, otherwise, the next one in the flash array when checking with the flash memory particle, is changed over to step (A2) then;
(A4) check out all when after with the flash memory particle, if fault is arranged when use the flash memory particle, then utilize redundant flash memory particle replacement failure rate maximum when using the flash memory particle, the information of replacing is changed in the solid-state storage processor, change step (A6) over to; Otherwise execution in step (A5) operation;
(A5) with the backstage space of redundant flash memory particle, be used to carry out built-in function as the solid-state storage processor;
(A6) finish;
Carrying out the fault-tolerant design method in the use comprises the steps:
(B1) the solid-state storage processor was monitored with the flash memory particle working as in the flash array of solid state memory device;
(B2) the monitoring process in, when host computer system in the solid state memory device when erase operation being arranged with the flash memory granule medium, just the least unit piece to each operation carries out counting operation; Such erase operation, count value just adds up 1;
(B3) judge whether said count value surpasses pre-set threshold, if, get into step (B4), proceed to keep watch on otherwise change step (B1) over to;
(B4) will carry out orderly data migtation work according to the priority that configures above the task queue that gets into data migtation with the flash memory particle of working as of threshold value;
That (B5) need move works as with the target of flash memory particle according to own passage corresponding redundant flash memory particle selection migration, the work of moving of completion data on the program backstage afterwards.
The present invention is employed in the method that increases subsequent use redundant storage particle on the board design of memory device; When equipment is being produced in the back end test or is being found to have flash memory to break down in using; Use the redundant storage particle to replace the fault particle; Thereby guarantee that even particle does not pass through packaging and testing, can not influence the acceptance rate that memory device is produced yet; Simultaneously; Adopt the method that increases the redundant storage particle through the present invention; Come the serviceable life of effective prolongation equipment, when having in the equipment after the flash memory particle reaches certain serviceable life, will be by redundant particle or the replacement of idle particle; Thereby, come the serviceable life of effective prolongation equipment through this replacement operation constantly.
The present invention adopts the redundant particle of memory device can be used in the device fabrication test, replacing the flash memory particle that unusual condition occurs;
The present invention adopts the redundant particle of memory device can be used in the normal use of memory device, replacing the flash memory particle that excessively uses or occur unusual condition;
The definition of excessively using among the present invention can be the threshold value of a plurality of access times; Reach the particle of first threshold value at first with redundant particle replacement; Redundant particle becomes the particle of normal use; The particle that is replaced becomes subsequent use redundant particle break-off, waits for that again the replacement next one reaches second threshold value at first and judged the particle that excessively uses.
The redundant particle of multi-channel flash memory memory device involved in the present invention can be that unit carries out replacement operation with single, also can be that unit carries out replacement operation with the passage.
The present invention exists the generation of bad piece according to existing solid storage medium; And the limited and life problems that causes of erasing times; These two characteristics may cause solid storage device part medium to lose efficacy; Therefore take the thought of redundancy backup, reduce the data loss problem of makeing mistakes and losing efficacy and bring because of medium.
Description of drawings
Fig. 1 is the structural representation of existing solid storage device;
Fig. 2 is the synoptic diagram of single redundant particle design in the embodiment of the invention;
Fig. 3 is the device fabrication test flow chart of the inventive method;
Fig. 4 is the synoptic diagram of many redundant particle designs in the preferred embodiment of the present invention;
Fig. 5 is a redundant block workflow diagram in the use of the inventive method.
Embodiment
Below utilize accompanying drawing and combine embodiment that the present invention is described in further detail.Embodiment described herein is a part of instance of the present invention, rather than whole embodiment.Based on embodiments of the invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
The invention provides a kind of through the particle of storage medium in the solid storage device being carried out the mode of redundancy backup, the next fault-tolerant design method that is about to inefficacy or failed flash particle that substitutes.Thereby greatly reduce the probability and the expense in production test stage that memory device lost efficacy.
As shown in Figure 1, be the functional block diagram of at present general solid storage device.Wherein mainly comprise host computer system 101 and solid storage device 102.Wherein, solid storage device 102 comprises interface module 103, solid-state storage processor 104, and be the Flash array 105 that unit forms with Flash particle 106.Wherein, interface module 103 is mainly used in and realizes and main frame accordant interface agreement, for example SATA; What present to main frame through interface module 103 is a standard storage equipment that has certain logical space.Solid-state storage processor 104 is control cores of whole memory device; Move firmware program above, the control signal between mainly responsible interface module 103 and the flash array 105 and the transmission of data, Flash management, host logical address are to Flash physical address map, wear leveling (preventing that single Flash was lost efficacy by the operation of too concentrating in advance thereby logical address is mapped to different physical addresss), bad block management etc.106 is single Flash particle, and a plurality of Flash particles are formed Flash array 105, are the terminal media of entire equipment information stores.
The inventive method is on the basis of above-mentioned solid storage device, to propose, and at first in the Flash array, increases redundant particle, like Fig. 2, Fig. 4, and manages by following process:
The information of redundant block be can write down in the storage of processor, its physical address, number, size etc. comprised.Then; In detecting the Flash array, there is the Flash particle to lose efficacy; Firmware program is this spent granules of mark and select a redundant particle to replace then, and the mode of replacement is exactly that the corresponding logical address of Flash particle that in map addresses, will lose efficacy originally is re-assigned on the redundant Flash particle of selection.
As previously mentioned, detect the inefficacy of Flash particle and possibly occur in the test phase that device fabrication is made, also possibly occur in the equipment running process explanation respectively below.
As shown in Figure 2, be an embodiment of the present invention, in this embodiment design, be mainly used at the volume production test phase and carry out.In this embodiment, only be provided with a redundant Flash particle to make example, the present invention does not limit the number of redundant particle.
With the Flash particle that need not pass through test or directly be not welded on the printed circuit board (PCB) of memory device 201 through the Flash wafer of encapsulation, simultaneously, need be on circuit board the positions of a particle of many designs, the position of promptly redundant Flash particle 203.Its purpose is because not process test or encapsulation of the flash memory particle that is welded; When in device detection procedure, finding to have the Flash particle to have fault maybe can not use; Just redundant Flash particle is replaced problematic Flash particle through the configuration of storage of processor, thereby, through the method for testing after this device fabrication completion; Remedy the Flash particle and do not have defective and problem, do not have great changes with the acceptance rate that guarantees entire equipment processing through packaging and testing.This mode can be saved the expense and the energy of Flash particle screen selecting.
In addition, the Flash particle of the overwhelming majority, Flash array 202; Even without through packaging and testing, its performance also can guarantee, therefore; In the test of most product after production is good, and its redundant Flash particle is not used to replace fault Flash particle.Among the present invention; These redundant Flash particles will be used to prolong service life of equipment; When Flash particle utilization rate reaches some or has after the Flash particle breaks down in equipment uses; Let redundant Flash particle replace Flash particle or the fault Flash particle that reaches the access times threshold value, thereby assurance equipment still can normally use, to reach the purpose that prolongs service life of equipment.
As shown in Figure 3, carry out the process flow diagram of the concrete steps of fault-tolerant design method for above-mentioned situation.
(1) firmware program in the solid-state storage processor when checking with the Flash particle, judges whether it breaks down in the Flash array each;
Working as of indication of the present invention is meant original Flash particle in the Flash array with the Flash particle.
(2) as if current Flash particle non-fault, then next Flash particle is checked, finished until all flash memory particle inspections;
(3) if break down the Flash particle, then it is carried out mark, and with its failure message record, like the fault situation, particle numbering etc.;
(4) check out after all Flash particles, if there is fault Flash particle then to judge information, chooses the maximum Flash particle of failure rate and replace, otherwise carry out the operation of the 5th step; The information of replacement is changed in the firmware program of solid-state storage processor, promptly the physical message of the fault Flash particle selected is replaced, use normally with assurance equipment with redundant standby Flash particle;
(5) if non-fault Flash particle, the Flash particle of then this redundancy backup being used is used for carrying out built-in function as the space, backstage of the firmware program in the solid-state storage processor, improving user's actual use experience, and operation such as increase the service life.
As shown in Figure 4; Be an embodiment of the present invention, the redundant Flash particle of designing printed circuit board is a plurality of among this embodiment, and its application target is consistent with Fig. 2 embodiment; Just consider its application target and higher equipment acceptance rate; Therefore reserve a plurality of redundant Flash particles, simultaneously, can more prolong the serviceable life of equipment.When this design mainly is used in solid storage device general work situation.
On the pcb board of memory device 401, flash array 402 is reserved the number of redundant Flash particle according to equipment physical channel number, in this example, three passages are arranged in the equipment, therefore be each passage reservation 1 redundant particle, totally 3 redundant particles.Before the Flash particle that occur not to lose efficacy, redundant Flash particle is also available is used as free block for these, because the time ratio of erase block is more of a specified duration; Free block is many more in the system; Need the probability of erase block just more little, therefore can promote the response speed of read-write operation, promote user's impression.
As shown in Figure 5, carry out the process flow diagram of the concrete steps of fault-tolerant design method for above-mentioned situation.
Following mask body describes this method.
(1) firmware program in the solid-state storage processor is monitored the Flash particle on the equipment, and this operation is to whole Flash particle operations;
(2) in the process that detects, when host computer system had erase operation to the Flash granule medium in the solid state memory device, just the least unit piece to each operation carried out counting operation; Such erase operation, count value just adds up 1;
(3) firmware program in the solid-state storage processor is added up and is kept watch on Flash particle overall technology situation, when this count value surpasses preset threshold, with regard to execution in step 4, otherwise just proceeds to keep watch on;
The span of threshold value is 1～N, and wherein N reads and writes number of times (this type of parameter being provided by Flash manufacturer) for the maximum that the Flash particle allows.In order to reduce cost, threshold value can be got the value near N usually, as greater than 90%N etc.
(4) the Flash particle that surpasses threshold value gets into the task queue of data migtation, carries out orderly data migtation work according to the priority that configures;
(5) need the target of the Flash particle of migration, accomplish the work of moving of data afterwards on the program backstage according to own passage corresponding redundant flash memory particle selection migration.
In use, when one of them particle access times reaches some, just can be replaced, when so just having a plurality of particles and reaching preset requirement gradually, replaced by subsequent use particle by one of them redundant Flash particle.Simultaneously, substituted particle is not to go out of use, and in order to reach better optimize, equipment is recycled; The threshold value of a plurality of access times can be set, when other particles are used higher access times, can be replaced because of reaching the low particle that uses threshold value to be replaced by these again; Like this, can better reach a kind of optimization, the utilization factor of enhancement apparatus; Constantly have by the Flash particle of excessive use to be replaced, let other do not used a period of time, be replaced up again by the Flash particle of frequent use; Therefore, overall equipment can significantly be increased service time, has prolonged the life-span of equipment effectively.Equally, can also be designed to the Flash replacement of whole passage for multichannel flash memory device or be that unit carries out fault-tolerant design with the passage.
Above content is to combine concrete preferred implementation to the further explain that the present invention did, and can not assert that practical implementation of the present invention is confined to these explanations.For the those of ordinary skill of technical field under the present invention, not breaking away under the prerequisite of the present invention design, can also make some simple deduction or replace, should be regarded as all belonging to that the present invention confirms by claims of being submitted to.
Claims (1)
1. a fault-tolerant design method that is used for solid storage device is provided with at least one redundant flash memory particle in flash array, in device fabrication test and/or use, carries out fault-tolerant design, it is characterized in that,
Fault-tolerant design method in the device fabrication test comprises the steps:
(A1) the solid-state storage processor was checked with the flash memory particle working as in the flash array of solid state memory device;
(A2) judge to work as whether break down with the flash memory particle, if, then it is carried out mark, and record trouble information; Change step (A3) over to, otherwise, step (A3) directly got into;
(A3) judge in the flash array when whether complete inspection finishes with the flash memory particle, if, change step (A4) over to, otherwise, the next one in the flash array when checking with the flash memory particle, is changed over to step (A2) then;
(A4) check out all when after with the flash memory particle, if fault is arranged when use the flash memory particle, then utilize redundant flash memory particle replacement failure rate maximum when using the flash memory particle, the information of replacing is changed in the solid-state storage processor, change step (A6) over to; Otherwise execution in step (A5) operation;
(A5) with the backstage space of redundant flash memory particle, be used to carry out built-in function as the solid-state storage processor;
(A6) finish;
Carrying out the fault-tolerant design method in the use comprises the steps:
(B1) the solid-state storage processor was monitored with the flash memory particle working as in the flash array of solid state memory device;
(B2) the monitoring process in, when host computer system in the solid state memory device when erase operation being arranged with the flash memory granule medium, just the least unit piece to each operation carries out counting operation; Such erase operation, count value just adds up 1;
(B3) judge whether said count value surpasses pre-set threshold, if, get into step (B4), proceed to keep watch on otherwise change step (B1) over to;
(B4) will carry out orderly data migtation work according to the priority that configures above the task queue that gets into data migtation with the flash memory particle of working as of threshold value;
That (B5) need move works as with the target of flash memory particle according to own passage corresponding redundant flash memory particle selection migration, the work of moving of completion data on the program backstage afterwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106079644A CN102043689B (en) | 2010-12-28 | 2010-12-28 | Fault tolerance design method for solid-state memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106079644A CN102043689B (en) | 2010-12-28 | 2010-12-28 | Fault tolerance design method for solid-state memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102043689A CN102043689A (en) | 2011-05-04 |
| CN102043689B true CN102043689B (en) | 2012-11-07 |
Family
ID=43909842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106079644A Active CN102043689B (en) | 2010-12-28 | 2010-12-28 | Fault tolerance design method for solid-state memory device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102043689B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522121B (en) * | 2011-12-13 | 2015-09-02 | 记忆科技(深圳)有限公司 | The method that solid state hard disc is repaired automatically and solid state hard disc thereof |
| CN102681952B (en) | 2012-05-12 | 2015-02-18 | 北京忆恒创源科技有限公司 | Method for writing data into memory equipment and memory equipment |
| CN102693198B (en) | 2012-05-12 | 2015-03-25 | 北京忆恒创源科技有限公司 | DMA (direct memory access) transmission method and system |
| CN102799392B (en) | 2012-06-16 | 2015-12-16 | 北京忆恒创源科技有限公司 | Memory device and interrupt control method thereof |
| CN102789439B (en) | 2012-06-16 | 2016-02-10 | 北京忆恒创源科技有限公司 | The method of the interruption in control data transmission process and memory device |
| CN103713969A (en) * | 2013-12-30 | 2014-04-09 | 华为技术有限公司 | Method and device for improving reliability of solid state disk |
| CN104991867B (en) * | 2015-08-12 | 2018-08-31 | 深圳芯邦科技股份有限公司 | A kind of eMMC service lifes management method and system |
| CN105096993B (en) * | 2015-09-21 | 2017-11-07 | 北京联想核芯科技有限公司 | Solid state hard disc, electronic equipment and information processing method |
| CN105630623A (en) * | 2015-12-31 | 2016-06-01 | 深圳市金胜电子科技有限公司 | Flash memory particle detection device |
| CN111007992B (en) * | 2020-03-04 | 2020-08-04 | 广东电网有限责任公司佛山供电局 | Disk data storage representation method, system and storage medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101299205A (en) * | 2008-06-25 | 2008-11-05 | 哈尔滨工业大学 | Priority queuing arbitration system bus control method based on voting |
| CN101907978A (en) * | 2010-07-27 | 2010-12-08 | 浙江大学 | Mixed storage system and storage method based on solid state disk and magnetic hard disk |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7477522B2 (en) * | 2006-10-23 | 2009-01-13 | International Business Machines Corporation | High density high reliability memory module with a fault tolerant address and command bus |
-
2010
- 2010-12-28 CN CN2010106079644A patent/CN102043689B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101299205A (en) * | 2008-06-25 | 2008-11-05 | 哈尔滨工业大学 | Priority queuing arbitration system bus control method based on voting |
| CN101907978A (en) * | 2010-07-27 | 2010-12-08 | 浙江大学 | Mixed storage system and storage method based on solid state disk and magnetic hard disk |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102043689A (en) | 2011-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102043689B (en) | Fault tolerance design method for solid-state memory device | |
| US9733844B2 (en) | Data migration method, data migration apparatus, and storage device | |
| US10936391B2 (en) | Memory management method and storage controller | |
| US8151137B2 (en) | Systems and methods for governing the life cycle of a solid state drive | |
| US8176367B2 (en) | Systems and methods for managing end of life in a solid state drive | |
| US20140006847A1 (en) | Defect Management in Memory Systems | |
| CN104102585A (en) | Mapping information recording method, memory controller and memory storage device | |
| CN102004706B (en) | Flash erasing power-fail protection method based on FTL(Flash Translation Layer) | |
| CN101165659A (en) | Methods and apparatus for reallocating addressable spaces within memory devices | |
| CN104903864A (en) | Selective error correcting code and memory access granularity switching | |
| TWI459393B (en) | Data writing method for a non-volatile memory module, memory controller and memory storage apparatus | |
| WO2010054410A2 (en) | Apparatus, system, and method for predicting failures in solid-state storage | |
| CN102063266A (en) | Nonvolatile memory controller and method for writing data to nonvolatile memory | |
| CN101567211A (en) | Method for improving usability of disk and disk array controller | |
| CN103455386A (en) | Method and equipment for restoring error data | |
| WO2015101051A1 (en) | Method and apparatus for improving reliability of solid state disk | |
| CN111324304A (en) | Data protection method and device based on SSD hard disk life prediction | |
| CN109918022A (en) | A kind of SSD opens card bad block table inheritance method | |
| KR102574354B1 (en) | Efficient data storage usage associated with ungraceful shutdown | |
| CN102456404A (en) | NVM (nonvolatile memory) storage device, memory controller and data storage method | |
| CN103713857A (en) | Data storage method and storage device | |
| CN102880432B (en) | Method and system for increasing writing speeds of flash memory chips by aid of limited lives of data and controller of system | |
| CN103106148B (en) | Block management method, storage controller and storage storing device | |
| KR20210137922A (en) | Systems, methods, and devices for data recovery using parity space as recovery space | |
| CN106354651B (en) | Average wear method, memory control circuit unit and memory storage device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 430074, Wuhan, East Lake hi tech Optics Valley Avenue, No. 58, Optics Valley headquarters, International Building No. 5, 901 Applicant after: Wuhan Soliware Storage Technology Co., Ltd. Co-applicant after: Huazhong University of Science and Technology Address before: 430074 Hubei Province, Wuhan City Forest Avenue Wuhan East Lake Development Zone WITHUB space 1809 Applicant before: Wuhan Soliware Storage Technology Co., Ltd. Co-applicant before: Huazhong University of Science and Technology |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |