CN105630623A - Flash memory particle detection device - Google Patents
Flash memory particle detection device Download PDFInfo
- Publication number
- CN105630623A CN105630623A CN201511015656.1A CN201511015656A CN105630623A CN 105630623 A CN105630623 A CN 105630623A CN 201511015656 A CN201511015656 A CN 201511015656A CN 105630623 A CN105630623 A CN 105630623A
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- Prior art keywords
- flash memory
- unit
- memory particle
- measured
- detecting unit
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention provides a flash memory particle detection device. The flash memory particle detection device comprises a fixing unit, a detection unit, a power supply unit and a display unit. The detection unit is electrically connected with the display unit and the fixing unit. The power supply unit is electrically connected with the detection unit, the display unit and the fixing unit. To-be-detected flash memory particles are fixed to the fixing unit. The detection unit reads the types of the to-be-detected flash memory particles, calls out characteristic parameters of the to-be-detected flash memory particles, generates corresponding detection parameters according to the characteristic parameters to detect and analyze each block of the to-be-detected flash memory particles, and finally sends the detection result to the display unit for display. According to the flash memory particle detection device, the storage quality of solid-state storage equipment is greatly improved, potential data safety danger is effectively eliminated, the use requirements of different kinds of solid-state storage equipment can be met, and the flash memory particle detection device has the advantages of being simple in structure, convenient to use, high in adaptability and the like.
Description
Technical field
The present invention relates to solid state storage technologies field, in particular to a kind of flash memory grain testing apparatus.
Background technology
At present, in field of solid state storage, on solid storage device, the quality of flash memory particle decides the stability of solid storage device. The Master control chip that solid storage device adopts is different, and the quality requirements for flash memory particle is different. Due to the characteristic of flash memory particle, there is the life problems of erasable number of times restriction, and the differentiation of bad block adopts the mode of ECC check and error correction, the general method adopting software test of existing flash memory particle detection, comprehensive detection cannot be carried out for each block in flash memory particle, thus can not evaluate the health degree etc. of each block in flash memory particle, can there are some incipient fault for data security in use; Also cannot be applicable to all Master control chips in addition, different solid storage device service requirementss can not be met, the quality of solid storage device cannot be ensured.
Summary of the invention
The object of the present invention solves the technology puzzlement overcoming flash memory grain testing apparatus and running into, the flash memory grain testing apparatus that a kind of structure is simple, easy to use, suitability is strong is provided, adopt the mode of hardware detection that each block of flash memory particle is carried out complete detection, substantially increase the storage quality of solid storage device, effectively stop incipient fault for data security, meet different solid storage device service requirementss.
For achieving the above object, the present invention proposes a kind of flash memory grain testing apparatus, comprise fixed cell, detecting unit, supply electric unit and display unit, described detecting unit is electrically connected with described display unit and described fixed cell respectively, and described confession electric unit is electrically connected with described detecting unit, described display unit and described fixed cell respectively; Wherein, flash memory particle to be measured is fixed on described fixed cell, described detecting unit reads the model of flash memory particle to be measured, and recall the characteristic parameter of flash memory particle to be measured, generate corresponding detect parameters according to described characteristic parameter again and each block of described flash memory particle to be measured is carried out detection analysis, finally detected result is sent to the display of described display unit.
Further, described detecting unit internal memory contains the characteristic parameter of multiple flash memory particle.
Further, described characteristic parameter comprises brand, model, manufacturing process, the quantity of block and size, ECC(error correction unit).
Further, described detect parameters comprises original bad block valve value, newly-increased bad block valve value, ECC valve value.
Further, described detected result comprises the original bad block number of flash memory particle to be measured, can use the quality status of block number, block and the serviceable bife of each piece, according to described detected result, described detecting unit assesses whether flash memory particle to be measured is applicable to manufacturing solid storage device, and Yi Hongquan and green circle are distinguished.
The invention has the beneficial effects as follows: the situation being different from prior art, the flash memory grain testing apparatus of the present invention adopts the mode of hardware detection, the model of flash memory particle to be measured is read by detecting unit, and recall the characteristic parameter of flash memory particle to be measured, generate corresponding detect parameters according to characteristic parameter again and each block of flash memory particle to be measured is carried out detection analysis, finally detected result is sent to the display of described display unit. The flash memory grain testing apparatus of the present invention generates corresponding detect parameters by the characteristic parameter of the flash memory particle preset in hardware, each block of flash memory particle is carried out complete detection, and the block with potential safety hazard is marked, substantially increase the storage quality of solid storage device, effectively stop incipient fault for data security, different solid storage device service requirementss can be met, there is the features such as structure is simple, easy to use, suitability is strong.
Accompanying drawing explanation
Fig. 1 is the structural representation of flash memory grain testing apparatus one embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
Refer to Fig. 1, a kind of flash memory grain testing apparatus of the flash memory chip-detecting apparatus of the present invention, comprise fixed cell 1, detecting unit 2, supply electric unit 3 and display unit 4, detecting unit 2 is electrically connected with display unit 4 and fixed cell 1 respectively, is electrically connected with detecting unit 2, display unit 4 and fixed cell 1 respectively for electric unit 3; Wherein, flash memory particle to be measured is fixed on fixed cell 1, detecting unit 2 reads the model of flash memory particle to be measured, and recall the characteristic parameter of flash memory particle to be measured, generate corresponding detect parameters according to characteristic parameter again and each block of flash memory particle to be measured is carried out detection analysis, finally detected result is sent to display unit 4 and shows.
Wherein, in the present embodiment, it, for fixing flash memory particle to be measured, is detected by fixed cell 1 for detecting unit 2. For electric unit 3 for powering to detecting unit 2, fixed cell 1 and display unit 4. Display unit 3 is for showing the detected result of flash memory particle to be measured.
In the present embodiment, detecting unit 2 internal memory contains the characteristic parameter of multiple flash memory particle, and characteristic parameter comprises brand, model, manufacturing process, the quantity of block and size, ECC(error correction unit). Detect parameters comprises original bad block valve value, newly-increased bad block valve value, ECC valve value.
Detected result comprises the original bad block number of flash memory particle to be measured, can use the quality status of block number, block and the serviceable bife of each piece, according to described detected result, detecting unit assesses whether flash memory particle to be measured is applicable to manufacturing solid storage device, and Yi Hongquan and green circle are distinguished.
Seeing also Fig. 1, the working process of flash memory grain testing apparatus of the present invention is as follows:
First, being placed on fixed cell 1 by flash memory particle to be detected, connect for electric unit 3, power to detecting unit 2 for electric unit 3, fixed cell 1 and display unit 4, display unit 4 demonstrates flash memory particle detection interface;
Then, by clicking the upper automatic detection button of display unit 4 flash memory particle detection interface, detecting unit 2 will first identify the characteristic parameter of flash memory particle to be measured, and characteristic parameter comprises brand, model, manufacturing process, the quantity of block and size, ECC(error correction unit) etc.; Detecting unit 2 can generate the corresponding detect parameters of setting automatically according to the characteristic parameter detected, and detect parameters comprises original bad block valve value, newly-increased bad block valve value, ECC valve value etc.;
Then, detecting unit 2 starts to be detected by flash memory particle to be measured; Two regions (original Huai Kuai district, can use district) of flash memory particle are carried out detection analysis by detecting unit 2 respectively, record the bad number of blocks in original Huai Kuai district, and the characteristic parameter according to flash memory particle to be measured calculates the block that can use and can use capacity; Each block that can use district carries out detection analyze, analyze the health degree of block and the serviceable bife of block; Wherein, the mode that detecting unit 2 adopts data write to enter to read verification carries out detection and analyzes;
Finally, detected result can be displayed on display unit 4 by the mode of numeral by detecting unit 2, detected result comprises the original bad block number of flash memory particle to be measured, can use the quality status of block number, block and the serviceable bife of each piece, according to described detected result, detecting unit 2 assesses whether flash memory particle to be measured is applicable to manufacturing solid storage device, and Yi Hongquan and green circle are distinguished, red circle representative can not use, and green circle representative can use.
The flash memory grain testing apparatus of the present invention adopts the mode of hardware detection, the model of flash memory particle to be measured is read by detecting unit, and recall the characteristic parameter of flash memory particle to be measured, generate corresponding detect parameters according to characteristic parameter again and each block of flash memory particle to be measured is carried out detection analysis, finally detected result is sent to the display of described display unit. The flash memory grain testing apparatus of the present invention generates corresponding detect parameters by the characteristic parameter of the flash memory particle preset in hardware, each block of flash memory particle is carried out complete detection, and the block with potential safety hazard is marked, substantially increase the storage quality of solid storage device, effectively stop incipient fault for data security, different solid storage device service requirementss can be met, there is the features such as structure is simple, easy to use, suitability is strong.
Here description of the invention and application are explanation property, not want by the range limit of the present invention in the above-described embodiments. Distortion and the change of embodiment disclosed here are possible, for those this areas those of ordinary skill embodiment replace and the various parts of equivalence are known. It should be clear to a person skilled in the art that, when not departing from spirit or the essential characteristic of the present invention, the present invention can in other forms, structure, layout, ratio, and realize with other assembly, material and parts. When not departing from the scope of the invention and spirit, it is possible to embodiment disclosed here is carried out other distortion and changes.
Claims (5)
1. a flash memory grain testing apparatus, it is characterized in that, comprise fixed cell, detecting unit, supply electric unit and display unit, described detecting unit is electrically connected with described display unit and described fixed cell respectively, and described confession electric unit is electrically connected with described detecting unit, described display unit and described fixed cell respectively; Wherein, flash memory particle to be measured is fixed on described fixed cell, described detecting unit reads the model of flash memory particle to be measured, and recall the characteristic parameter of flash memory particle to be measured, generate corresponding detect parameters according to described characteristic parameter again and each block of described flash memory particle to be measured is carried out detection analysis, finally detected result is sent to the display of described display unit.
2. flash memory grain testing apparatus according to claim 1, it is characterised in that, described detecting unit internal memory contains the characteristic parameter of multiple flash memory particle.
3. flash memory grain testing apparatus according to claim 2, it is characterised in that, described characteristic parameter comprises brand, model, manufacturing process, the quantity of block and size, ECC(error correction unit).
4. flash memory grain testing apparatus according to claim 1, it is characterised in that, described detect parameters comprises original bad block valve value, newly-increased bad block valve value, ECC valve value.
5. flash memory grain testing apparatus according to claim 4, it is characterized in that, described detected result comprises the original bad block number of flash memory particle to be measured, can use the quality status of block number, block and the serviceable bife of each piece, according to described detected result, described detecting unit assesses whether flash memory particle to be measured is applicable to manufacturing solid storage device, and Yi Hongquan and green circle are distinguished.
Priority Applications (1)
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CN201511015656.1A CN105630623A (en) | 2015-12-31 | 2015-12-31 | Flash memory particle detection device |
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CN201511015656.1A CN105630623A (en) | 2015-12-31 | 2015-12-31 | Flash memory particle detection device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109684150A (en) * | 2018-12-24 | 2019-04-26 | 北京紫光得瑞科技有限公司 | Store Performance Test System, test method and the emulation platform of Grain size controlling device |
CN114550772A (en) * | 2022-03-10 | 2022-05-27 | 北京得瑞领新科技有限公司 | Method for managing particles in NAND flash memory, storage medium and storage device |
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CN102081970A (en) * | 2010-12-31 | 2011-06-01 | 成都市华为赛门铁克科技有限公司 | Method and device for processing error correction and solid-state hard disc equipment |
CN103488583A (en) * | 2013-09-09 | 2014-01-01 | 华中科技大学 | High-performance reliable solid-state disk realizing method |
CN104050108A (en) * | 2014-06-19 | 2014-09-17 | 华为技术有限公司 | Storage device and system and data storage method |
WO2015101051A1 (en) * | 2013-12-30 | 2015-07-09 | 华为技术有限公司 | Method and apparatus for improving reliability of solid state disk |
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2015
- 2015-12-31 CN CN201511015656.1A patent/CN105630623A/en active Pending
Patent Citations (5)
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CN102043689A (en) * | 2010-12-28 | 2011-05-04 | 武汉固捷联讯科技有限公司 | Fault tolerance design method for solid-state memory device |
CN102081970A (en) * | 2010-12-31 | 2011-06-01 | 成都市华为赛门铁克科技有限公司 | Method and device for processing error correction and solid-state hard disc equipment |
CN103488583A (en) * | 2013-09-09 | 2014-01-01 | 华中科技大学 | High-performance reliable solid-state disk realizing method |
WO2015101051A1 (en) * | 2013-12-30 | 2015-07-09 | 华为技术有限公司 | Method and apparatus for improving reliability of solid state disk |
CN104050108A (en) * | 2014-06-19 | 2014-09-17 | 华为技术有限公司 | Storage device and system and data storage method |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN109684150A (en) * | 2018-12-24 | 2019-04-26 | 北京紫光得瑞科技有限公司 | Store Performance Test System, test method and the emulation platform of Grain size controlling device |
CN109684150B (en) * | 2018-12-24 | 2022-04-26 | 北京得瑞领新科技有限公司 | Performance test system, test method and simulation platform of storage particle controller |
CN114550772A (en) * | 2022-03-10 | 2022-05-27 | 北京得瑞领新科技有限公司 | Method for managing particles in NAND flash memory, storage medium and storage device |
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Application publication date: 20160601 |