CN102043344B - Monitoring method for exposure machine table - Google Patents
Monitoring method for exposure machine table Download PDFInfo
- Publication number
- CN102043344B CN102043344B CN 200910206375 CN200910206375A CN102043344B CN 102043344 B CN102043344 B CN 102043344B CN 200910206375 CN200910206375 CN 200910206375 CN 200910206375 A CN200910206375 A CN 200910206375A CN 102043344 B CN102043344 B CN 102043344B
- Authority
- CN
- China
- Prior art keywords
- exposure
- critical size
- bcd
- tcd
- test pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a monitoring method for an exposure machine table. A wafer is exposed by presetting exposure energy E0 and an exposure focal length F0, and a photo masking pattern is transferred on a sensitive material layer on the wafer to form a test pattern. The top critical dimension (TCD) and the bottom critical dimension (BCD) of the test pattern are measured. The offset delta E of the exposure energy and the offset delta F of the exposure focal length are solved by the following formula: TCD+BCD=alpha delta E+(TCD 0+BCD 0)TCD-BCD=beta1 delta F+beta 2 delta F3, wherein alpha, beta1 and beta 2 are all constants; delta E=E-E0, delta F=F=F0, E is actual exposure energy, F is actual exposure focal length, E0 is energy enabling the intermediate critical dimension of the test pattern to be equal to a desired value, and F0 is focal length enabling the TCD of the test pattern to be equal to the BCD; and TCD 0 and BCD 0 express the theoretic TCD and BCD of the test pattern under E0 and F0, wherein TCD 0 is equal to BCD 0.
Description
Technical field
The invention relates to a kind of monitoring method of board, and particularly relevant for a kind of monitoring method of exposure bench.
Background technology
Lithographic process (Photolithography) is one of most crucial steps in the manufacture of semiconductor.(Critical Dimension, basic parameter CD) mainly are exposure energy (Exposure Dose) and focal length (Focus) to influence the critical size of lithographic process.In general, exposure bench when exposing the actual exposure energy and real focal length meeting and setting value between error is arranged, just produce so-called energy excursion (dose drift) and focus offset (focus drift), so can exert an influence to the critical size of pattern and the profile of pattern.Therefore, usually after carrying out exposure manufacture process, can be according to the result of its at last measured critical size, come exposure energy is compensated, and provide a default exposure energy by the energy settings system of exposure bench, so that the critical size value of next batch (Lot) wafer can be more near desired value (Target Value).Yet, in traditional compensation method, can't know the actual exposure focal length by inference by the result of at last measured critical size, thereby can't the focusing skew compensate.
Hold above-mentioned, when component size more and more hour, the allowed error (Tolerance) of the size that element design goes out is also more and more little.Therefore, in this case, the how exposure energy of monitoring more accurately and control exposure bench and exposure focal length, to produce the element with acceptable critical size, become present industry one of the target of making great efforts to develop.
Summary of the invention
The invention provides a kind of monitoring method of exposure bench, come the exposure energy of monitoring exposure machine and exposure focal length whether to produce skew by the exposure energy side-play amount that single pattern calculates with the exposure focus offset.
The invention provides the monitoring method of another kind of exposure bench, come the exposure energy of monitoring exposure machine and exposure focal length whether to produce skew by the exposure energy side-play amount that a plurality of patterns calculate with the exposure focus offset.
The present invention proposes a kind of monitoring method of exposure bench, be suitable for calculating the actual exposure energy E of exposure bench and actual exposure focal length F whether with the default exposure energy E that imports
0And default exposure focal length F
0Between error is arranged.At first, form photosensitive material layer at wafer.Then, the default exposure energy E to be imported
0With default exposure focal length F
0Wafer is exposed, with the design transfer on the photomask to photosensitive material layer, to form test pattern.Then, measure top critical size and the bottom critical size of test pattern, to obtain actual top critical size TCD and actual bottom critical size BCD.Then, try to achieve exposure energy offset E and exposure focus offset Δ F with following formula:
TCD+BCD＝αΔE+(TCD
0+BCD
0)
TCD-BCD＝β
1ΔF+β
2ΔF
3
Wherein, α, β
1And β
2Be constant; Δ E=E-E
0, Δ F=F-F
0, E is the actual exposure energy, F is the actual exposure focal length, E
0For the middle critical size that makes test pattern is equal to the default energy of desired value, F
0Be equal to the default focal length of bottom critical size for the top critical size that makes test pattern; And TCD
0With BCD
0Be illustrated in E
0With F
0Conditions of exposure under, the top critical size that test pattern has in theory and bottom critical size, wherein TCD
0Equal BCD
0
In one embodiment of this invention, the method for the top critical size of above-mentioned measurement test pattern and bottom critical size comprises critical size sweep electron microscope (CD-SEM) measuring method.
In one embodiment of this invention, the method for the top critical size of above-mentioned measurement test pattern and bottom critical size comprises spectrum critical size (SCD) measuring method.
In one embodiment of this invention, as exposure energy offset E during greater than preset range, comprise that also adjusting exposure bench with manual mode gets back to the datum line state.
In one embodiment of this invention, as exposure focus offset Δ F during greater than preset range, comprise that also adjusting exposure bench with manual mode gets back to the datum line state.
In one embodiment of this invention, above-mentioned exposure bench and processing procedure control system link, and the processing procedure control system is carried out automatic feedback according to exposure energy offset E with the exposure bench of exposure focus offset Δ F.
In one embodiment of this invention, above-mentioned processing procedure control system is also carried out automatic feedback according to the thickness of photosensitive material layer to exposure bench.
In one embodiment of this invention, above-mentioned processing procedure control system comprises the advanced process control system.
The present invention proposes the monitoring method of another kind of exposure bench.At first, form photosensitive material layer at wafer.Then, the default exposure energy E to be imported
0With default exposure focal length F
0Wafer is exposed, with the design transfer that has different live width gap ratios on the photomask to photosensitive material layer, to form a plurality of test patterns.Then, measure top critical size and the bottom critical size of each test pattern, to obtain actual top critical size TCD and the actual bottom critical size BCD of each test pattern.Then, try to achieve corresponding to the exposure energy offset E of each test pattern and the focus offset Δ F that exposes with following formula.
TCD+BCD＝αΔE+(TCD
0+BCD
0)
TCD-BCD＝β
1ΔF+β
2ΔF
3
Wherein, α, β
1And β
2Be constant; Δ E=E-E
0, Δ F=F-F
0, E is the actual exposure energy, F is the actual exposure focal length, E
0For the middle critical size that makes each test pattern is equal to the default energy of desired value separately, F
0For the top critical size of each test pattern is equal to the default focal length of bottom critical size, TCD
0With BCD
0Be illustrated in E
0With F
0Conditions of exposure under, the top critical size that each test pattern has in theory and bottom critical size, wherein TCD
0Equal BCD
0Then, whether the offset direction of more a plurality of exposure energy offset E is consistent, and whether the offset direction of more a plurality of exposure focus offset Δ F is consistent.
In one embodiment of this invention, the method for the top critical size of above-mentioned each test pattern of measurement and bottom critical size comprises critical size sweep electron microscope (CD-SEM) measuring method.
In one embodiment of this invention, the method for the top critical size of above-mentioned each test pattern of measurement and bottom critical size comprises spectrum critical size (SCD) measuring method.
In one embodiment of this invention, when the offset direction of the offset direction of a plurality of exposure energy offset E or a plurality of exposure focus offset Δ F is inconsistent, also comprises hardware device is detected.
In one embodiment of this invention, above-mentioned hardware device comprises camera lens.
In one embodiment of this invention, above-mentioned exposure bench and processing procedure control system link, and when the offset direction of and a plurality of exposure focus offset Δ Fs consistent when the offset direction of a plurality of exposure energy offset E was consistent, the processing procedure control system was carried out automatic feedback according to these exposure energy offset E and the exposure bench of these exposure focus offset Δ F.
In one embodiment of this invention, above-mentioned processing procedure control system is also carried out automatic feedback according to the thickness of photosensitive material layer to exposure bench.
In one embodiment of this invention, above-mentioned processing procedure control system comprises the advanced process control system.
Based on above-mentioned, the monitoring method of exposure bench of the present invention is to utilize the exposure energy side-play amount and exposure focus offset that calculates exposure bench, exposure bench come the exposure energy of monitoring exposure machine whether to depart from datum line with the exposure focal length, so that can be kept stable and best exposure status.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended accompanying drawing to be described in detail below.
Description of drawings
Fig. 1 is the schematic flow sheet according to the monitoring method of a kind of exposure bench of the first embodiment of the present invention.
Fig. 2 is the schematic flow sheet according to the monitoring method of a kind of exposure bench of the second embodiment of the present invention.
The main element symbol description
S100～S240: step
Embodiment
Along with the continuous development of manufacture of semiconductor, the allowed error of the size that element design goes out is also more and more little.Thus, the actual exposure energy of exposure bench and the error between actual exposure focal length and the preset value also relatively can cause even more serious influence to the accuracy of the critical size of last exposing patterns.Therefore, the present invention proposes the monitoring method of exposure bench, come the exposure energy of monitoring exposure machine whether to depart from datum line with the exposure focal length according to the exposure energy side-play amount that is calculated by formula and exposure focus offset, and exposure energy and exposure focal length compensated, so that exposure bench can be kept stable and best exposure status.
In detail, exposure bench may be because of the change of board state or the influence of external environment factor after long-term the use, and makes actual exposure energy and actual exposure focal length and default exposure energy E
0And default exposure focal length F
0Error is arranged between the setting value, and the present invention utilizes formula to calculate the state that this error is come monitoring exposure machine.Therefore, before the application of explanation formula, must understand earlier and how set up default exposure energy E
0With default exposure focal length F
0In general, use the test light mask of the pattern with different live width gap ratios, with focal length energy matrix (focus-energy matrix; FEM) photosensitive material layer on the wafer is exposed, to form test pattern at photosensitive material layer, then measure the top critical size (TCD) of test pattern, middle critical size (MCD) and bottom critical size (BCD).At this moment, find that the middle critical size of test pattern can equal a desired value under a particular exposure energy, this exposure energy is default exposure energy E
0Under a particular exposure focal length, the top critical size of test pattern can equal the bottom critical size, and this exposure focal length is default exposure focal length F
0And, corresponding to default exposure energy E
0With default exposure focal length F
0Test pattern have top critical size TCD
0With bottom critical size BCD
0, wherein because at default exposure focal length F
0Under the condition, the top critical size of test pattern is equal to the bottom critical size, so TCD
0Equal BCD
0Then, with default exposure energy E
0With default exposure focal length F
0Centered by condition do focal length energy matrix (FEM), measure under each focal length energy the top critical size TCD of test pattern and bottom critical size BCD.Then, the gained data are brought into following formula and try to achieve α, β with the numerical value homing method
1And β
2
TCD+BCD＝αΔE+(TCD
0+BCD
0)
TCD-BCD＝β
1ΔF+β
2ΔF
3
Next, the monitoring method of the exposure bench of using formula of the present invention is described.
[first embodiment]
Fig. 1 is the schematic flow sheet according to the monitoring method of a kind of exposure bench of the first embodiment of the present invention.It must be appreciated, in the present embodiment, actual exposure energy E and actual exposure focal length F and above-mentioned default exposure energy E
0With default exposure focal length F
0Be all to compare under the identical condition at other exposure parameters.
At first, carry out S100, form photosensitive material layer at wafer.
Then, carry out S110, with the default exposure energy E that is imported
0With default exposure focal length F
0Wafer is exposed, the single pattern on the test light mask is transferred on the photosensitive material layer, to form test pattern.What specify is, though be to describe pattern on the photomask with single pattern herein, but in general, single pattern refers to a plurality of repeat patterns with identical live width gap ratio (duty ratio), and therefore the test pattern that is formed on the photosensitive material layer is actually a plurality of repeat patterns.
Then, carry out S120, measure top critical size and the bottom critical size of test pattern, to obtain actual top critical size TCD and actual bottom critical size BCD.In the present embodiment, measure the top critical size of test pattern and the method for bottom critical size and comprise critical size sweep electron microscope (CD-SEM) measuring method, spectrum critical size (SCD) measuring method and other suitable measuring methods.
Then, carry out S130, with actual top critical size TCD, actual bottom critical size BCD and according to previously described top critical size TCD
0With bottom critical size BCD
0Bring in the following formula, in the hope of exposure energy offset E and exposure focus offset Δ F:
TCD+BCD＝αΔE+(TCD
0+BCD
0)
TCD-BCD＝β
1ΔF+β
2ΔF
3
Wherein, α, β
1And β
2Be constant; Δ E=E-E
0, Δ F=F-F
0, E is the actual exposure energy, F is the actual exposure focal length, E
0For the middle critical size that makes test pattern is equal to the default energy of a desired value, F
0Be equal to the default focal length of bottom critical size for the top critical size that makes test pattern; And TCD
0With BCD
0Be illustrated in E
0With F
0Conditions of exposure under, the top critical size that test pattern has in theory and bottom critical size, wherein TCD
0Equal BCD
0
What specify is that as mentioned before, the test pattern that is formed on the photosensitive material layer is actually a plurality of repeat patterns, therefore, in the present embodiment, can record a plurality of TCD of a plurality of repeat patterns
0, BCD
0, BCD and TCD, and obtain a plurality of Δ F and Δ E according to above-mentioned formula.Therefore, in fact the exposure energy offset E of indication is respectively the mean value of a plurality of Δ F and the mean value of a plurality of Δ E with the exposure focus offset in the present embodiment.
Can learn according to exposure energy offset E and exposure focus offset Δ F whether the exposure energy of exposure bench and exposure focal length depart from datum line, and can try to achieve actual exposure energy and actual exposure focal length.In the present embodiment, exposure bench for example is to link with the processing procedure control system, so the processing procedure control system can be carried out automatic feedback with the exposure bench of exposure focus offset Δ F according to exposure energy offset E.Special one carry be, in the present embodiment, be with other conditions of exposures all with set up default exposure energy E
0With default exposure focal length F
0The time employed other conditions of exposures identical be example, but in other embodiments, if other process conditions change to some extent, such as the thickness of photosensitive material layer or other become because of, then the processing procedure control system can be come exposure bench is carried out automatic feedback in conjunction with process conditions, exposure energy offset E and the exposure focus offset Δ F of this change.Processing procedure control system herein for example be advanced process control (Advanced Process Control, APC).
Moreover, in one embodiment, when exposure energy offset E during greater than a preset range, for example is to adjust exposure bench with manual mode to get back to the datum line state greater than a preset range or exposure focus offset Δ F.
In the present embodiment, utilize the exposure energy offset E that calculates exposure bench to come monitoring exposure machine whether the problem of energy excursion and focus offset is arranged with exposure focus offset Δ F.Therefore, but whether the exposure energy of monitoring exposure machine departs from datum line with the exposure focal length, and exposure energy and exposure focal length are compensated, so that exposure bench can be kept stable and best exposure status.Thus, can produce the element with acceptable critical size, with processing procedure yields and the reduction processing procedure cost that significantly promotes product.
In first embodiment, be to be example to come monitoring exposure machine according to exposure energy offset E that single pattern was calculated with exposure focus offset Δ F, next will introduce the method that a plurality of exposure energy offset E of calculating according to a plurality of patterns and a plurality of exposure focus offset Δ F come monitoring exposure machine.
[second embodiment]
Fig. 2 is the schematic flow sheet according to the monitoring method of a kind of exposure bench of the second embodiment of the present invention.It must be appreciated, in the present embodiment, actual exposure energy E and actual exposure focal length F and above-mentioned default exposure energy E
0With default exposure focal length F
0Be all to compare under the identical condition at other exposure parameters.
At first, carry out S200, form photosensitive material layer at wafer.
Then, carry out S210, with the default exposure energy E that is imported
0With default exposure focal length F
0Wafer is exposed, with the design transfer that has different live width gap ratios (duty ratio) on the test light mask to photosensitive material layer, to form a plurality of test pattern P1, P2.In the present embodiment, be to be example at two test patterns with different live width gap ratios of photosensitive material layer formation, be respectively the first test pattern P1 and the second test pattern P2.Certainly, in other embodiments, can form the test pattern with different live width gap ratios of other numbers at photosensitive material layer, the present invention is not limited.
Then, carry out S220, measure top critical size and the bottom critical size of each test pattern P1, P2, to obtain the actual top critical size TCD of each test pattern P1, P2
1, TCD
2With actual bottom critical size BCD
1, BCD
2TCD
1With BCD
1Be respectively actual top critical size and the actual bottom critical size of the first test pattern P1, TCD
2With BCD
2Be respectively actual top critical size and the actual bottom critical size of the second test pattern P2.The measuring method of critical size can not given unnecessary details at this with reference to described in first embodiment.
Then, carry out S230, with the actual top critical size TCD of gained
1, TCD
2With actual bottom critical size BCD
1, BCD
2Bring in the following formula with TCD and BCD respectively, in the hope of corresponding to exposure energy offset E1, the Δ E2 of each test pattern P1, P2 and exposure focus offset Δ F1, Δ F2:
TCD+BCD＝αΔE+(TCD
0+BCD
0)
TCD-BCD＝β
1ΔF+β
2ΔF
3
Wherein, α, β
1And β
2Be constant; Δ E=E-E
0, Δ F=F-F
0, E is the actual exposure energy, F is the actual exposure focal length, E
0For the middle critical size that makes each test pattern P1, P2 is equal to the default energy of desired value separately, F
0Be equal to the default focal length of bottom critical size for the top critical size of each test pattern P1, P2; TCD
0With BCD
0Be illustrated in E
0With F
0Conditions of exposure under, the top critical size that each test pattern P1, P2 have in theory and bottom critical size, wherein TCD
0Equal BCD
0Be understandable that in the present embodiment, test pattern P1, P2 have the top critical size TCD that belongs to separately respectively
0With bottom critical size BCD
0
Then, carry out S240, whether the offset direction of more a plurality of exposure energy offset E1, Δ E2 is consistent, and whether the offset direction of more a plurality of exposure focus offset Δ F1, Δ F2 is consistent.In the present embodiment, exposure energy offset E1, the offset direction of Δ E2 for example is identical, as be forward migration or be negative offset, and exposure focus offset Δ F1, the offset direction of Δ F2 for example is identical, as be forward migration or be negative offset, then can be according to these exposure energy offset E1 with the processing procedure control system of exposure bench binding, Δ E2 and these exposure focus offset Δs F1, the exposure bench of Δ F2 carries out automatic feedback, in general, as exposure energy offset E1, when Δ E2 is unequal, can get exposure energy offset E1, the mean value of Δ E2 carries out above-mentioned feedback.Similarly, as exposure focus offset Δ F1, when Δ F2 is unequal, the mean value that can get exposure focus offset Δ F1, Δ F2 carries out above-mentioned feedback.In addition, described in first embodiment, the processing procedure control system also can be carried out automatic feedback to exposure bench further combined with the process conditions (such as the thickness of photosensitive material layer) of other variations.
Yet, in another embodiment, when the offset direction of the offset direction of a plurality of exposure energy offset E1, Δ E2 inconsistent or a plurality of exposure focus offset Δ F1, Δ F2 is inconsistent, must detect hardware device.For instance, if the offset direction of exposure focus offset Δ F1, Δ F2 is inconsistent, can check then whether camera lens is unusual.
In the present embodiment, utilize and to calculate a plurality of exposure energy offset E and a plurality of exposure focus offset Δ F comes monitoring exposure machine whether the problem of energy excursion and focus offset is arranged.Therefore, but whether the exposure energy of monitoring exposure machine departs from datum line with the exposure focal length, and exposure energy and exposure focal length are compensated, so that exposure bench can be kept stable and best exposure status.In addition, can further determine the normal operation of the hardware device of the stability of exposure bench and exposure bench by a plurality of exposure energy offset E and a plurality of exposure focus offset Δ F.
In sum, the monitoring method of exposure bench of the present invention can be learnt the actual exposure energy of exposure bench and the error between actual exposure focal length and default exposure energy and the default exposure focal length, and whether the problem of energy excursion and focus offset is arranged with monitoring exposure machine.Therefore, but whether the exposure energy of monitoring exposure machine departs from datum line with the exposure focal length, and exposure energy and exposure focal length are compensated, so that exposure bench can be kept stable and best exposure status.Thus, can produce the element with acceptable critical size, with processing procedure yields and the reduction processing procedure cost that significantly promotes product.
Though the present invention with embodiment openly as above; right its is not in order to limiting the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (16)
1. the monitoring method of an exposure bench, be suitable for calculating an actual exposure energy E of this exposure bench and an actual exposure focal length F whether with a default exposure energy E who imports
0An and default exposure focal length F
0Between error is arranged, comprising:
Form a photosensitive material layer at a wafer;
Should default exposure energy E with what imported
0With this default exposure focal length F
0This wafer is exposed, with the design transfer on the photomask to this photosensitive material layer, to form a test pattern;
Measure top critical size and the bottom critical size of this test pattern, to obtain actual top critical size TCD and actual bottom critical size BCD; And
Try to achieve an exposure energy offset E and an exposure focus offset Δ F with following formula:
TCD+BCD＝αΔE+(TCD
0+BCD
0)
TCD-BCD＝β
1ΔF+β
2ΔF
3
Wherein, α, β
1And β
2Be constant;
Δ E=E-E
0, Δ F=F-F
0, E is the actual exposure energy, F is the actual exposure focal length, E
0For the middle critical size that makes this test pattern is equal to the default energy of a desired value, F
0Be equal to the default focal length of bottom critical size for the top critical size that makes this test pattern; And
TCD
0With BCD
0Be illustrated in E
0With F
0Conditions of exposure under, the top critical size that this test pattern has in theory and bottom critical size, wherein TCD
0Equal BCD
0
2. the monitoring method of exposure bench according to claim 1 is wherein measured the top critical size of this test pattern and the method for bottom critical size and is comprised critical size sweep electron microscope (CD-SEM) measuring method.
3. the monitoring method of exposure bench according to claim 1 is wherein measured the top critical size of this test pattern and the method for bottom critical size and is comprised spectrum critical size (SCD) measuring method.
4. the monitoring method of exposure bench according to claim 1 as this exposure energy offset E during greater than a preset range, comprises that also adjusting this exposure bench with manual mode gets back to the datum line state.
5. the monitoring method of exposure bench according to claim 1 as this exposure focus offset Δ F during greater than a preset range, comprises that also adjusting this exposure bench with manual mode gets back to the datum line state.
6. the monitoring method of exposure bench according to claim 1, wherein this exposure bench and a processing procedure control system link, and this processing procedure control system is carried out automatic feedback according to this exposure energy offset E and this exposure focus offset Δ F to this exposure bench.
7. the monitoring method of exposure bench according to claim 6, wherein this processing procedure control system is also carried out automatic feedback according to the thickness of this photosensitive material layer to this exposure bench.
8. the monitoring method of exposure bench according to claim 6, wherein this processing procedure control system comprises the advanced process control system.
9. the monitoring method of an exposure bench comprises:
Form a photosensitive material layer at a wafer;
With a default exposure energy E who is imported
0With a default exposure focal length F
0This wafer is exposed, with the design transfer that has different live width gap ratios on the photomask to this photosensitive material layer, to form a plurality of test patterns;
Measure respectively top critical size and the bottom critical size of this test pattern, to obtain respectively actual top critical size TCD and the actual bottom critical size BCD of this test pattern; And
Try to achieve exposure energy offset E and exposure focus offset Δ F corresponding to this test pattern respectively with following formula:
TCD+BCD＝αΔE+(TCD
0+BCD
0)
TCD-BCD＝β
1ΔF+β
2ΔF
3
Wherein, α, β 1 and β 2 are constant;
Δ E=E-E
0, Δ F=F-F
0, E is the actual exposure energy, F is the actual exposure focal length, E
0The middle critical size of this test pattern is equal to the default energy of desired value separately, F in order to make respectively
0For making the top critical size of this test pattern respectively be equal to the default focal length of bottom critical size; And
TCD
0With BCD
0Be illustrated in E
0With F
0Conditions of exposure under, the top critical size and bottom critical size, the wherein TCD that have in theory of this test pattern respectively
0Equal BCD
0And
Relatively whether the offset direction of those exposure energy offset E is consistent, and relatively whether the offset direction of those exposure focus offset Δs F is consistent.
10. the monitoring method of exposure bench according to claim 9, wherein measuring respectively, the top critical size of this test pattern and the method for bottom critical size comprise critical size sweep electron microscope (CD-SEM) measuring method.
11. the monitoring method of exposure bench according to claim 9, wherein measuring respectively, the top critical size of this test pattern and the method for bottom critical size comprise spectrum critical size (SCD) measuring method.
12. the monitoring method of exposure bench according to claim 9 when the offset direction of the offset direction of those exposure energy offset E or those exposure focus offset Δs F is inconsistent, also comprises a hardware device is detected.
13. the monitoring method of exposure bench according to claim 12, wherein this hardware device comprises camera lens.
14. the monitoring method of exposure bench according to claim 9, wherein this exposure bench and a processing procedure control system link, and when the offset direction of and those exposure focus offset Δ F consistent when the offset direction of those exposure energy offset E was consistent, this processing procedure control system was carried out automatic feedback according to those exposure energy offset E and those exposure focus offset Δs F to this exposure bench.
15. the monitoring method of exposure bench according to claim 14, wherein this processing procedure control system is also carried out automatic feedback according to the thickness of this photosensitive material layer to this exposure bench.
16. the monitoring method of exposure bench according to claim 14, wherein this processing procedure control system comprises the advanced process control system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910206375 CN102043344B (en) | 2009-10-15 | 2009-10-15 | Monitoring method for exposure machine table |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910206375 CN102043344B (en) | 2009-10-15 | 2009-10-15 | Monitoring method for exposure machine table |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102043344A CN102043344A (en) | 2011-05-04 |
| CN102043344B true CN102043344B (en) | 2013-07-17 |
Family
ID=43909603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910206375 Active CN102043344B (en) | 2009-10-15 | 2009-10-15 | Monitoring method for exposure machine table |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102043344B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113485073A (en) * | 2021-06-09 | 2021-10-08 | 华虹半导体(无锡)有限公司 | Method for compensating critical dimension |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2008702A (en) * | 2011-05-25 | 2012-11-27 | Asml Netherlands Bv | Computational process control. |
| NL2008924A (en) | 2011-06-22 | 2013-01-02 | Asml Netherlands Bv | System and method to ensure source and image stability. |
| CN103186051B (en) * | 2011-12-27 | 2015-05-13 | 无锡华润上华科技有限公司 | Method for setting exposure conditions in photoetching |
| CN103904003B (en) * | 2012-12-24 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | A kind of hybrid feedback formula advanced process control system system |
| JP6289181B2 (en) * | 2013-06-26 | 2018-03-07 | キヤノン株式会社 | Drawing apparatus and article manufacturing method |
| CN105093815B (en) * | 2014-05-21 | 2019-10-15 | 北大方正集团有限公司 | The extracting method of device design size |
| CN104035275A (en) * | 2014-05-21 | 2014-09-10 | 京东方科技集团股份有限公司 | Mask plate |
| CN107037694A (en) * | 2017-05-25 | 2017-08-11 | 苏州灯龙光电科技有限公司 | A kind of detection plate and its detection method for detecting display performance |
| CN112731768B (en) * | 2019-10-29 | 2021-10-15 | 上海微电子装备（集团）股份有限公司 | Method for measuring dose uniformity of photoetching machine |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6544699B1 (en) * | 2001-02-07 | 2003-04-08 | Advanced Micro Devices, Inc. | Method to improve accuracy of model-based optical proximity correction |
| CN101430566A (en) * | 2007-11-08 | 2009-05-13 | 中芯国际集成电路制造(上海)有限公司 | Method for controlling etching deviation |
| CN101546129A (en) * | 2008-03-25 | 2009-09-30 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring exposure device by adopting side wall angles |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4898419B2 (en) * | 2006-01-05 | 2012-03-14 | キヤノン株式会社 | Method for determining exposure amount and focus position offset amount, program and device manufacturing method |
-
2009
- 2009-10-15 CN CN 200910206375 patent/CN102043344B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6544699B1 (en) * | 2001-02-07 | 2003-04-08 | Advanced Micro Devices, Inc. | Method to improve accuracy of model-based optical proximity correction |
| CN101430566A (en) * | 2007-11-08 | 2009-05-13 | 中芯国际集成电路制造(上海)有限公司 | Method for controlling etching deviation |
| CN101546129A (en) * | 2008-03-25 | 2009-09-30 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring exposure device by adopting side wall angles |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113485073A (en) * | 2021-06-09 | 2021-10-08 | 华虹半导体(无锡)有限公司 | Method for compensating critical dimension |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102043344A (en) | 2011-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102043344B (en) | Monitoring method for exposure machine table | |
| TW531799B (en) | Method for manufacturing semiconductor device and system for manufacturing semiconductor device | |
| CN105573048B (en) | Optimization method of optical proximity correction model | |
| JP3761357B2 (en) | Exposure amount monitor mask, exposure amount adjustment method, and semiconductor device manufacturing method | |
| CN109634067B (en) | Exposure method | |
| CN111033387B (en) | Method for adjusting feedforward parameters | |
| CN102023488A (en) | Method for monitoring energy deviation of exposure machine in photoetching technique | |
| KR102283493B1 (en) | How to determine the location of a feature | |
| JP2006344739A (en) | Position measuring device and its method | |
| US9152059B2 (en) | Exposure apparatus and device fabrication method | |
| KR102183619B1 (en) | Method of monitoring and device manufacturing method | |
| CN112987516B (en) | Method for semiconductor photoetching process | |
| TW550660B (en) | Lithography method for forming semiconductor devices on a wafer and apparatus | |
| US11809088B2 (en) | Method for controlling a lithographic apparatus | |
| US20230153582A1 (en) | Configuration of an imputer model | |
| EP3913435A1 (en) | Configuration of an imputer model | |
| US6868301B1 (en) | Method and application of metrology and process diagnostic information for improved overlay control | |
| CN103631083B (en) | A kind of focal plane system of selection of optical proximity correction | |
| KR101113325B1 (en) | Method for verifying Optical Proximity Correction | |
| CN114616523A (en) | Method for inferring processing parameters such as focus and associated apparatus and manufacturing method | |
| CN103995440B (en) | The detection method of performance aimed at by litho machine | |
| CN109541900B (en) | Method and system for monitoring use of a light cover | |
| KR100818424B1 (en) | Method for automatically controlling expose energy | |
| US9256703B1 (en) | Method of detecting a scattering bar by simulation | |
| CN117891141A (en) | Error compensation method, system and full-automatic proximity lithography equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |