CN117891141A - Error compensation method, system and full-automatic proximity lithography equipment - Google Patents
Error compensation method, system and full-automatic proximity lithography equipment Download PDFInfo
- Publication number
- CN117891141A CN117891141A CN202410163440.2A CN202410163440A CN117891141A CN 117891141 A CN117891141 A CN 117891141A CN 202410163440 A CN202410163440 A CN 202410163440A CN 117891141 A CN117891141 A CN 117891141A
- Authority
- CN
- China
- Prior art keywords
- alignment mark
- temperature
- target
- alignment
- error compensation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000001459 lithography Methods 0.000 title claims abstract description 23
- 238000009529 body temperature measurement Methods 0.000 claims description 21
- 238000005315 distribution function Methods 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 9
- 238000000638 solvent extraction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides an error compensation method, an error compensation system and full-automatic proximity lithography equipment, and belongs to the technical field of proximity lithography. The error compensation method comprises the following steps: acquiring the temperature of each temperature measuring area of the wafer; determining a reference point according to the temperature of each temperature measuring area; calculating the relative position change quantity of each second alignment mark and the reference point; calculating the distance value between each second alignment mark and other second alignment marks; determining a second target alignment mark according to each relative position change amount and each distance value, wherein the second target alignment mark is one of a plurality of second alignment marks; and controlling the first target alignment mark to be aligned with the second target alignment mark, wherein the first target alignment mark is one of the first alignment marks corresponding to the second target alignment mark. The invention can improve the alignment precision of the mask table and the wafer and reduce the alignment error.
Description
Technical Field
The present disclosure relates to the field of proximity lithography, and in particular, to an error compensation method and system, and a full-automatic proximity lithography apparatus.
Background
Proximity lithography is a lithography technique used in photolithography processes, commonly used to fabricate micro-structures and micro-scale devices. Proximity lithography, unlike conventional step exposure lithography, is characterized by a very small distance between the lithography machine and the photoresist layer, typically on the sub-micron or nanometer scale. The proximity lithography machine may implement an overlay process.
Overlay (also known as multi-layer lithography or multiple exposure) is a process of performing lithography on the same wafer using multiple mask layers, and is suitable for the fields of integrated circuits, MEMS (micro electro mechanical systems), optical elements, and the like. The process generally includes the steps of: base layer preparation: basic processes such as cleaning and photoresist coating are performed on the wafer. This step ensures that the wafer surface is ready to receive subsequent multiple exposures. First exposure: using the first mask, a light source of the lithography machine is irradiated onto a photosensitive resist layer that is overlaid on the wafer. This step forms a pattern on the photosensitive glue according to the pattern of the first mask. The exposed photosensitive paste is developed to remove the unexposed portions and form a first pattern. First overlay: after the wafer is subjected to the first exposure and development, the photosensitive adhesive layer is coated again. This new layer of photosensitive glue will cover the first pattern. Second exposure: the exposure is performed again using a second mask. The pattern of the second mask will be superimposed on top of the first pattern. Developing: developing the photosensitive adhesive after the second exposure to remove the unexposed part to form a second pattern. Repeating the steps, and performing multiple exposure and development by using a plurality of mask layers according to the requirement to form a multi-layer pattern.
The overlay process may introduce various errors that may affect the accuracy and quality of the final pattern. Among these, alignment errors are a common problem in the overlay process. Each exposure requires accurate alignment of the new mask layer to the previous pattern, which, if not aligned accurately, can lead to pattern misalignment, ultimately affecting device performance. Therefore, how to improve the alignment accuracy of the mask stage and the wafer and reduce the alignment error is a problem to be solved in the art.
Disclosure of Invention
An object of the present invention is to improve the alignment accuracy of a mask stage and a wafer and to reduce alignment errors.
In particular, an embodiment of the present invention provides an error compensation method for a proximity lithography apparatus, where the proximity lithography apparatus includes a stage, a mask stage, and an alignment device, where the stage is used to place a wafer, the wafer has a plurality of evenly divided temperature measurement areas and a plurality of evenly distributed second alignment marks, one second alignment mark is disposed on each temperature measurement area, and a first alignment mark corresponding to the second alignment mark one by one is disposed on the mask stage, and the method includes:
acquiring the temperature of each temperature measuring area of the wafer;
determining a reference point according to the temperature of each temperature measuring area;
calculating the relative position change quantity of each second alignment mark and the reference point;
calculating a distance value between each second alignment mark and other second alignment marks;
determining a second target alignment mark according to each relative position change amount and each distance value, wherein the second target alignment mark is one of a plurality of second alignment marks;
and controlling the first target alignment mark to be aligned with the second target alignment mark, wherein the first target alignment mark is one of the first alignment marks corresponding to the second target alignment mark.
Optionally, the step of acquiring the temperature of each temperature measurement region of the wafer includes:
and acquiring the temperatures at a plurality of target positions in each temperature measuring area.
Optionally, the step of determining the reference point according to the temperature of each of the temperature measurement areas includes:
determining a temperature distribution function of each temperature measuring area according to the temperature of each target position;
the reference point is determined from a temperature distribution function.
Optionally, each temperature measuring area is an area uniformly distributed along the circumferential direction on the wafer, and the step of determining the reference point according to the temperature distribution function includes:
and selecting a position point with the minimum temperature change as a reference point according to each temperature distribution function.
Optionally, the temperature distribution function is:
；
t (x, y) is the temperature at the position (x, y), T0 is the base temperature of the temperature measuring region, A is the variation amplitude of the temperature measuring region, x 0 And y 0 Is the center position of the temperature distribution of the temperature measuring region, and λ is the wavelength parameter.
Optionally, the step of determining the second target alignment mark according to each of the relative position change amounts and each of the pitch values includes:
comparing the respective relative position change amounts;
if the number of the smallest relative position change amounts is one, selecting the second alignment mark with the smallest relative position change amounts as the second target alignment mark;
and if the number of the minimum relative position change amounts is a plurality of, selecting the second alignment mark with the largest distance value as the second target alignment mark.
Optionally, the step of determining the second target alignment mark according to each of the relative position change amounts and each of the pitch values includes:
and selecting the second alignment mark with the largest distance value from a plurality of second alignment marks with the relative position variation smaller than a first threshold value as the second target alignment mark.
Optionally, the step of controlling the alignment of the first target alignment mark with the second target alignment mark comprises:
and controlling the first target alignment mark to be aligned with the second target alignment mark when replacing a preset number of masks.
In particular, the embodiment of the invention also provides an error compensation system for implementing the error compensation method.
Particularly, the embodiment of the invention also provides full-automatic proximity lithography equipment, which comprises a carrying platform, a mask platform, an alignment device and the error compensation system, wherein the mask platform is provided with first alignment marks corresponding to second alignment marks one by one, each second alignment mark is correspondingly arranged in each temperature measuring area which is uniformly divided on a wafer, and a plurality of second alignment marks are uniformly distributed.
According to the first aspect of the invention, the temperature of the wafer on the carrying platform of the photoetching machine is detected in a partitioning manner, then the reference point is determined according to the temperature of each temperature measuring area, and then a reliable second alignment mark, namely a second target alignment mark, is determined according to the relative position of each second alignment mark and the reference point on the wafer and the distance value between each second alignment mark and other second alignment marks, and then the alignment of the first target alignment mark and the second target alignment mark is controlled, so that the error caused by temperature change, namely the inaccuracy of the alignment mark on the wafer caused by wafer deformation caused by temperature change, is reduced as much as possible, and the inaccuracy of the pattern on the wafer is caused.
Further, the second target alignment mark is determined according to the relative position variation of the second alignment mark and the distance value between the second alignment mark and other second alignment marks, specifically, the second target alignment mark is selected by taking the minimum relative position variation and the maximum distance value as selection criteria, the accuracy of the position of the second alignment mark can be guaranteed due to the minimum relative position variation, and the robustness can be improved due to the maximum distance value, so that the determined second target alignment mark is guaranteed to be the most accurate and reliable.
Drawings
FIG. 1 is a flow chart of a method of error compensation according to one embodiment of the invention;
FIG. 2 is a schematic diagram of a wafer according to one embodiment of the present invention;
fig. 3 is a flow chart of an error compensation method according to another embodiment of the present invention.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not limiting. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present application are shown in the drawings. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The terms "comprising" and "having" and any variations thereof herein are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
Fig. 1 is a flow chart of an error compensation method according to an embodiment of the present invention. Fig. 2 is a schematic structural view of a wafer according to an embodiment of the present invention. One embodiment of the present invention provides an error compensation method for a proximity lithographic apparatus that includes a stage for placing a wafer, a mask stage, and an alignment device. As shown in fig. 2, the wafer 10 has a plurality of evenly divided temperature measurement areas 101 and a plurality of evenly distributed second alignment marks 102, each temperature measurement area 101 is provided with a second alignment mark 102, and the mask stage is provided with first alignment marks corresponding to the second alignment marks 102 one by one. The temperature measuring areas 101 may be a plurality of areas uniformly distributed along the circumferential direction of the wafer 10, and each temperature measuring area 101 is identical in shape and size, for example, all of the areas have a fan shape with a vertex being the center of the wafer 10. The temperature measuring areas 101 may be adjacent, i.e. two adjacent temperature measuring areas 101 share a boundary line.
As shown in fig. 1, the error compensation method includes the steps of:
step S100, acquiring the temperature of each temperature measuring area 101 of the wafer 10;
step S200, determining a reference point 103 according to the temperature of each temperature measuring area 101;
step S300, calculating the relative position change amounts of the second alignment marks 102 and the reference points 103;
step S400, calculating the distance value between each second alignment mark 102 and other second alignment marks 102;
step S500, determining a second target alignment mark according to each relative position change amount and each interval value, wherein the second target alignment mark is one of a plurality of second alignment marks 102;
in step S600, the first target alignment mark is controlled to align with the second target alignment mark, where the first target alignment mark is one of the first alignment marks corresponding to the second target alignment mark.
In step S100, the temperature distribution of the whole temperature measurement area 101 may be obtained, for example, a thermal infrared imager is used to capture infrared radiation on the surface of the wafer, so as to generate a thermal infrared image of the whole surface of the wafer, and by analyzing these images, the temperature distribution of different areas may be obtained, and the temperature acquisition mode may acquire more real temperature data, but the subsequent processing mode is more complex. In step S100, the point temperature measurement can be performed on the surface of the wafer by using an infrared thermometer, which is a non-contact measurement mode and is suitable for quickly acquiring the temperature information of a specific point.
In step S200, a point with a small temperature change may be determined according to the temperature of each temperature measurement region 101, and the point is regarded as a trusted reference as the reference point 103.
The execution period in step S600 may be set according to the situation, and the alignment of the alignment marks may be performed each time the mask is replaced, or the alignment of the first target alignment mark and the second target alignment mark may be controlled each time a predetermined number of masks are replaced, where the predetermined number may be tens or hundreds, and the present invention is not limited thereto.
Of course, in some embodiments, after step S100, an on condition setting whether error compensation is performed may be further included, for example, when the temperature change of a certain temperature measurement area 101 is greater than a certain value, or when the temperature difference between the temperature measurement areas 101 is greater than a certain value, the steps 200 to S600 are continuously performed.
In this embodiment, the temperature of the wafer on the stage of the lithography machine is detected in a partitioning manner, then the reference point 103 is determined according to the temperature of each temperature measuring area 101, and then a reliable second alignment mark 102, that is, a second target alignment mark, is determined according to the relative position between each second alignment mark 102 and the reference point 103 on the wafer and the distance value between each second alignment mark 102 and other second alignment marks 102, and then the alignment of the first target alignment mark and the second target alignment mark is controlled, so that errors caused by temperature changes, that is, errors of alignment marks on the wafer caused by wafer deformation due to temperature changes, are reduced as much as possible, and thus, patterns on the wafer are inaccurate.
Fig. 3 is a flow chart of an error compensation method according to another embodiment of the present invention. In another embodiment, as shown in fig. 3, the error compensation method includes the steps of:
step S120, obtaining temperatures at a plurality of target positions in each temperature measuring region 101, wherein each temperature measuring region 101 is a region uniformly distributed along the circumferential direction on the wafer;
step S220, determining a temperature distribution function of each temperature measuring area 101 according to the temperature at each target position;
step S230, selecting a position point with the minimum temperature change as a reference point 103 according to each temperature distribution function;
step S300, calculating the relative position change amounts of the second alignment marks 102 and the reference points 103;
step S400, calculating the distance value between each second alignment mark 102 and other second alignment marks 102;
step S520, comparing the relative position change amounts;
step S522, judging whether the number of the smallest relative position change amounts is one, if yes, proceeding to step S524, otherwise proceeding to step S526;
step S524, selecting the second alignment mark 102 with the smallest relative position variation as the second target alignment mark;
in step S526, the second alignment mark 102 with the largest pitch value is selected as the second target alignment mark.
In step S120, temperatures of a plurality of target positions, i.e., point temperatures, in each temperature measurement region 101 are collected, so that a non-contact infrared thermometer can be used, thereby avoiding deformation of the wafer caused by the temperature measurement device, and being beneficial to ensuring accuracy of alignment marks on the wafer.
In step S220, a temperature distribution function of each temperature measurement region 101 may be determined according to the temperatures of the plurality of target positions of each temperature measurement region 101, and in one embodiment, the temperature distribution function T (x, y) may be represented by the following formula:
；
wherein T (x, y) is the temperature at the position (x, y), T0 is the base temperature of the temperature measuring region, A is the variation amplitude of the temperature measuring region, x 0 And y 0 Is the center position of the temperature distribution of the temperature measuring region, and λ is the wavelength parameter. The parameters can be obtained by fitting data through a plurality of temperature values of the temperature measuring area.
The sine and cosine terms in the temperature distribution function of the present embodiment may be used to describe the periodic variation phenomenon, and for the batch manufacturing of the same integrated circuit, the temperature variation during the alignment process of each integrated circuit may be periodically changed, that is, each time the mask is exposed, the use of the light source may cause the temperature to rise, and the use of the light source may cause the temperature to fall when the mask is not exposed, so that the temperature distribution function is particularly suitable for the alignment process of the wafer. And because the light source position used for exposure is fixed and is equivalent to the heat source position, the simple model can accurately express the temperature change characteristic which is more consistent with the wafer alignment process.
In step S230, the location point with the smallest temperature change can be obtained according to the temperature distribution function, and it is necessary to know the temperature of each point on the wafer at the previous time, and the location point with the smallest temperature change can be obtained by making a difference.
In step S300, the reference point 103 may be considered as a point where the positions of the previous time and the current time do not change, so that the distance between the reference point 103 and each second alignment mark 102 at the previous time is a determined value, and then the distance between the second alignment mark 102 at the previous time and the reference point 103 is calculated, and the relative position change amount between each second alignment mark 102 and the reference point 103 can be obtained by subtracting the determined value from the calculated distance.
In step S400, the distance value may be calculated according to the euler formula according to the coordinate values between each second alignment mark 102 and other second alignment marks 102 at the current time.
In this embodiment, the second target alignment mark is determined according to the relative position variation of the second alignment mark 102 and the distance value between the second alignment mark 102 and other second alignment marks 102, specifically, the second target alignment mark is selected by using the minimum relative position variation and the maximum distance value as selection criteria, the minimum relative position variation can ensure the accuracy of the position of the second alignment mark 102, and the maximum distance value can improve the robustness, thereby ensuring that the determined second target alignment mark is the most accurate and reliable.
In yet another embodiment, step S500 includes:
and selecting the second alignment mark 102 with the largest distance value among the plurality of second alignment marks 102 with the relative position change less than the first threshold as the second target alignment mark.
In this embodiment, the first threshold is set to define the second alignment mark 102 whose relative position variation meets the requirement, and then the second alignment mark 102 with the largest distance value is selected as the second target alignment mark, so that more second alignment marks 102 with smaller relative position variation can be screened out by setting the first threshold, which is beneficial to selecting the second alignment mark 102 with larger distance value and improving the reliability of the selected second target alignment mark.
An embodiment of the present invention also provides an error compensation system for implementing the error compensation method of any one of the above.
The error compensation system detects the temperature of a wafer on a carrying platform of a photoetching machine in a partitioning manner, then determines a reference point 103 according to the temperature of each temperature measuring area 101, then determines a reliable second alignment mark 102, namely a second target alignment mark according to the relative position of each second alignment mark 102 and the reference point 103 on the wafer and the distance value between each second alignment mark 102 and other second alignment marks 102, and then controls the first target alignment mark to be aligned with the second target alignment mark, thereby reducing the error caused by temperature change as much as possible, namely the inaccuracy of the alignment mark on the wafer caused by the deformation of the wafer due to the temperature change, and further causing the inaccuracy of the pattern aligned on the wafer.
An embodiment of the present invention further provides a full-automatic proximity lithography apparatus, which includes a carrier, a mask stage, an alignment device, and the error compensation system, where the mask stage is provided with first alignment marks corresponding to the second alignment marks 102 one by one, each second alignment mark 102 is correspondingly disposed in each temperature measurement area 101 uniformly divided on the wafer, and the plurality of second alignment marks 102 are uniformly distributed. The error compensation system controls the alignment device to align the first target alignment mark of the mask stage with the second target alignment mark of the wafer after determining the second target alignment mark.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. An error compensation method for a proximity lithography apparatus, the proximity lithography apparatus including a stage, a mask stage, and an alignment device, the stage being configured to place a wafer, the wafer having a plurality of evenly divided temperature measurement areas and a plurality of evenly distributed second alignment marks, each of the temperature measurement areas being provided with one of the second alignment marks, the mask stage being provided with first alignment marks corresponding to the second alignment marks one by one, the method comprising:
acquiring the temperature of each temperature measuring area of the wafer;
determining a reference point according to the temperature of each temperature measuring area;
calculating the relative position change quantity of each second alignment mark and the reference point;
calculating a distance value between each second alignment mark and other second alignment marks;
determining a second target alignment mark according to each relative position change amount and each distance value, wherein the second target alignment mark is one of a plurality of second alignment marks;
and controlling the first target alignment mark to be aligned with the second target alignment mark, wherein the first target alignment mark is one of the first alignment marks corresponding to the second target alignment mark.
2. The method of claim 1, wherein the step of obtaining the temperature of each of the temperature measurement regions of the wafer comprises:
and acquiring the temperatures at a plurality of target positions in each temperature measuring area.
3. The error compensation method of claim 2 wherein the step of determining a reference point based on the temperature of each of the temperature measurement regions comprises:
determining a temperature distribution function of each temperature measuring area according to the temperature of each target position;
the reference point is determined from a temperature distribution function.
4. The error compensation method of claim 3, wherein the temperature distribution function is:
；
t (x, y) is the temperature at the position (x, y), T0 is the base temperature of the temperature measuring region, A is the variation amplitude of the temperature measuring region, x 0 And y 0 Is the center position of the temperature distribution of the temperature measuring region, and λ is the wavelength parameter.
5. The method according to any one of claims 1 to 4, wherein each of the temperature measurement regions is a region uniformly distributed in a circumferential direction on the wafer, and the step of determining the reference point from a temperature distribution function includes:
and selecting a position point with the minimum temperature change as a reference point according to each temperature distribution function.
6. The error compensation method of claim 5, wherein determining the second target alignment mark based on each of the relative position change amounts and each of the pitch values comprises:
comparing the respective relative position change amounts;
if the number of the smallest relative position change amounts is one, selecting the second alignment mark with the smallest relative position change amounts as the second target alignment mark;
and if the number of the minimum relative position change amounts is a plurality of, selecting the second alignment mark with the largest distance value as the second target alignment mark.
7. The error compensation method of claim 5, wherein determining the second target alignment mark based on each of the relative position change amounts and each of the pitch values comprises:
and selecting the second alignment mark with the largest distance value from a plurality of second alignment marks with the relative position variation smaller than a first threshold value as the second target alignment mark.
8. The error compensation method of claim 1, wherein the step of controlling alignment of a first target alignment mark with the second target alignment mark comprises:
and controlling the first target alignment mark to be aligned with the second target alignment mark when replacing a preset number of masks.
9. An error compensation system for implementing the error compensation method of any one of claims 1-8.
10. The full-automatic proximity lithography equipment is characterized by comprising a carrier, a mask table, an alignment device and the error compensation system described in claim 9, wherein the mask table is provided with first alignment marks corresponding to second alignment marks one by one, each second alignment mark is correspondingly arranged in each temperature measuring area which is uniformly divided on a wafer, and a plurality of second alignment marks are uniformly distributed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410163440.2A CN117891141A (en) | 2024-02-05 | 2024-02-05 | Error compensation method, system and full-automatic proximity lithography equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410163440.2A CN117891141A (en) | 2024-02-05 | 2024-02-05 | Error compensation method, system and full-automatic proximity lithography equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117891141A true CN117891141A (en) | 2024-04-16 |
Family
ID=90651164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410163440.2A Pending CN117891141A (en) | 2024-02-05 | 2024-02-05 | Error compensation method, system and full-automatic proximity lithography equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117891141A (en) |
-
2024
- 2024-02-05 CN CN202410163440.2A patent/CN117891141A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114114850B (en) | Lithographic process and apparatus and inspection process and apparatus | |
| CN110100207B (en) | Method of determining the position of a feature | |
| JP3962648B2 (en) | Distortion measuring method and exposure apparatus | |
| KR100920857B1 (en) | Method for predicting resist pattern shape, computer readable medium storing program for predicting resist pattern shape, and computer for predicting resist pattern shape | |
| JP2006344739A (en) | Position measuring device and its method | |
| JP5134625B2 (en) | Method and system for reducing overlay error in an exposure field with an APC control strategy | |
| JP2010502024A5 (en) | ||
| KR20180119503A (en) | Method of monitoring and device manufacturing method | |
| JP7339826B2 (en) | Mark positioning method, lithographic method, article manufacturing method, program and lithographic apparatus | |
| US7212286B2 (en) | Aligning method, exposure method, exposure apparatus, and device manufacturing method | |
| CN117891141A (en) | Error compensation method, system and full-automatic proximity lithography equipment | |
| US20220357672A1 (en) | Method for inferring a processing parameter such as focus and associated apparatuses and manufacturing method | |
| JP6356996B2 (en) | Pattern forming method, exposure apparatus, and article manufacturing method | |
| CN109426098B (en) | Patterning method, lithographic apparatus and article manufacturing method | |
| JP2009170612A (en) | Information processor, information processing method, processing system, and computer program | |
| JP2009170559A (en) | Exposure device, and device manufacturing method | |
| KR20090069095A (en) | Method for manufacturing semiconductor device | |
| KR20190046680A (en) | Microlithographic mask, method for determining edge positions of the images of the structures of such a mask and system for carrying out such a method | |
| TWI811952B (en) | Metrology methods and appratuses | |
| CN109541900B (en) | Method and system for monitoring use of a light cover | |
| EP3376290A1 (en) | Metrology method and method of device manufacture | |
| KR20230147100A (en) | New interface regulations for lithography devices | |
| CN115210650A (en) | Method for inferring local uniformity metrics | |
| CN112352201A (en) | Method for controlling a manufacturing apparatus and associated apparatus | |
| JPH11288869A (en) | Measuring method for distortion of lens |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |