CN102037572A - 太阳能生成系统 - Google Patents

太阳能生成系统 Download PDF

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CN102037572A
CN102037572A CN200980109006XA CN200980109006A CN102037572A CN 102037572 A CN102037572 A CN 102037572A CN 200980109006X A CN200980109006X A CN 200980109006XA CN 200980109006 A CN200980109006 A CN 200980109006A CN 102037572 A CN102037572 A CN 102037572A
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T·D·费
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WEDGE TECHNOLOGIES LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0549—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising spectrum splitting means, e.g. dichroic mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

一种产生太阳能电能的设备通常包括：聚焦太阳辐射的光学部件；准直光学部件；布置于准直光学部件的焦点附近的用于在多个相邻的波长带之间分散入射太阳辐射的半导体光学栅楔；光伏电池阵列，每个电池由将通过楔分散的相应波长带吸收并转换成光伏能量的材料而形成；以及，配置于所述楔和阵列之间用于将分离的波长带引导到相应的光伏电池上的折射光学部件。

Description

太阳能生成系统
太阳能光伏(PV)电池现在为地球上的偏远场所和航天器提供电力，在这些地方其它电源是昂贵的或不能利用的。太阳能PV技术还不能同大部分中心位置的发电应用相竞争，因为它们都显著地比其它可用能源(例如，煤，气和核能)昂贵。
太阳能PV技术仍然被关注，因为随着其供给的减少，现存的发电形式无疑将会变得更加昂贵。所有形式的太阳能电力也是可再生的和对环境友好的。当前具有动力来使太阳能PV电池更便宜并且提高其效率(直接将太阳能转换为电)。
当前全球仅电能生产成本大约为$300M/hr；并且整体的能源市场是该数字的两倍。能够以比现有的燃煤或核能安装成本低的成本来安装的任何能源生产能力都将会受到热烈欢迎。
太阳能PV电池的现存问题是双重的。首先，基于其安装成本，对于中心位置的发电而言，它们不能同传统能源相竞争，(太阳能大约$7-$10/安装瓦特，相比而言，煤、核能、或天然气为$4-$5/瓦特)。其次，目前太阳能PV电池需要与用于众多电子工业(计算机、LED和二极管激光器)中的稀缺半导体材料相同的稀缺半导体材料。为了使太阳能PV电池作为发电源具有竞争性，它们必须具有更低的制造成本，在它们将太阳能转换为电时变得更有效率得多，并且它们必须几乎完全使用便宜且丰富的材料来制造。
当前太阳能电池技术在屋顶应用中使用单结电池。这种电池通常具有大约12％到18％的效率且需要纯硅，纯硅在电子工业大量用于其它应用。为了提高太阳能电池的效率，已进行了大量尝试来制造“多结”电池。设计这些堆叠的电池，使得电池的不同层吸收入射太阳能的不同能量带。
这种多结电池被证明是更有效率的-在实验室中最好的例子取得的效率是刚刚超过40％。然而，复杂性限制了其组件中必须用的材料(例如Ge，III-V)并且目前它们比单结电池要昂贵得多。
当前聚光太阳能电池的制造中，可以实现(Spectrolab，波音公司)40％或更大的最大效率，但只有当每个电池层(包括涂层)的厚度能够极高精度地气相沉积时，才是如此。每个电池层的厚度必须被精确控制以在电池的每个部分保持相同的电流生成。对于多结电池，尤其如此，在多结电池中结间相等的电流需要在每个结之间的昂贵的、精确的隧道二极管。除了与精确制造相关的高工艺成本之外，这些多结部件还必须相互间“晶格匹配”。
这意味着电池设计者受限于稀缺的、昂贵的半导体合金组合，以便在每一个结达到精确相同的分子晶格间距。
为了在中心位置发电市场中竞争，太阳能PV电池和聚光系统必须成本低于$2/安装瓦特。同样，它们必须达到高效率以使它们的“占空比”(duty cycle)有竞争力。目前一种典型的中心位置发电设备“工作”(on station)～20小时/天。在美国西南部，固定的，SOA太阳能板只有大约6小时/天产生电能，占空比为～25％。跟踪太阳的太阳能电池将会每天平均约11小时产生电能。
发明内容
依照本发明用于产生太阳能光伏能量的设备通常包括：聚焦太阳辐射的光学部件；紧接着是准直光学部件；半导体光学栅楔(optical gate wedge)，设置用于将入射的太阳辐射分散成多个相邻的波长带。该楔可包括多个涂层以减少反射损失。
提供光伏电池阵列，每个电池用吸收和转换被该楔分散的相应波长带成为电能的材料形成。折射光学部件配置在该楔和该阵列之间以将被分离的波长带引导到相应的光伏电池上。
以这种方式，在分散的阵列中的电池中的每种半导体材料为仅匹配该材料吸收和转换太阳光而成为电能的能力的入射太阳光谱中的波长范围而设置。
这些“未堆叠的”(unstacked)太阳能电池阵列使用丰富的且不那么贵的材料以比现有多结电池低很多的工艺成本制造。一旦每个PV材料和电池针对其适当的光子波长或能量而被优化，则获得的光伏(PV)电池阵列电能/总功率分数(效率)将超过40％。
相反地，如前所述的，现有技术太阳能板系统受限于18％或更少的整体效率。
更特别地，折射光学部件设置在该楔和该阵列之间，其目的是将分离的波长带引导到相应的光伏电池上。每个电池包括单结的III-V或Si光伏电池，其显著降低了设备的成本。
更特别的，作为一个示例，该阵列可以包括5个电池，其中第一个电池吸收能量为0.95到1.15eV的太阳光子，第二个电池吸收能量为1.2到1.4eV的太阳光子，第三个电池吸收能量为1.45到1.7eV的太阳光子，第四个电池吸收能量为1.75到2.1eV的太阳光子，并且第五个电池吸收能量为2.15到2.8eV的太阳光子。
更特别的，第一个电池可由GaInAsP形成，第二个电池可由Si形成，第三个电池可由GaAs形成，第四个电池可由GaInP形成且第五个电池可由Al2GaInP4形成。
为了进一步提高设备的效率和效果，该折射光学部件可以设置用于将来自该楔的光空间分散到光伏电池上，垂直电池表面入射。
依照本发明提供一种优化光伏电池阵列的方法，通常包括：聚焦太阳辐射到半导体光学栅楔上；通过该栅楔分散太阳辐射成多个相邻波长带，引导相邻波长带使它们垂直光伏电池阵列的表面入射。更特别的，该方法进一步包括设置多个单结III-V或Si光伏电池以形成线性阵列。
附图说明
通过考虑以下结合附图的详细描述本发明将更容易理解，其中：
图1是依照本发明的产生太阳光伏能量的光伏(PV)盒的图示，其一般性地示出了准直光学部件、半导体光学栅楔、光伏电池阵列以及设置在该楔和该阵列之间的阵列光学部件；
图2是太阳能生成系统的图示，包括与图1所示PV盒操作上有关系地配置的聚焦光学部件；
图3是依照本发明图2所示聚焦光学部件的一个实施例的图示，其示例出具有4面镜子的菲涅耳阵列；
图4是依照本发明图2所示聚焦光学部件的一个可选实施例的图示，其示例出具有36面镜子的菲涅耳阵列；以及
图5是生成的电学瓦特对太阳光谱与以eV为单位的光子能量之间的关系图，示出了依照本发明通过使用单结二极管光伏电池阵列的设备的效率。
具体实施方式
参考图1，示出了按照本发明的产生太阳光伏能量的光伏(PV)盒，其通常包括：准直光学部件12；半导体光学栅楔14，如果需要选择性反射入射辐射，则其可以被涂覆；设置在楔14和光伏电池22、24、26、28、30的阵列18之间的折射光学部件16。太阳辐射通过窗口8进入该PV盒10。
如图2所示，太阳能量生成系统2包括聚焦太阳辐射到PV盒10的窗口8上的聚焦光学部件4。该PV盒通过几个支柱6附着到聚焦光学部件4的支撑上。
聚焦光学部件4可以具有任意适合的构造和尺寸，例如，图3中所示，其中聚焦光学部件包括具有4面镜子34、36、38、40的菲涅耳阵列4a，每面镜子直径为0.5m，它们离两个半导体光学栅楔14约0.5m的距离。所述楔14具有约0.04m2的面积。假设太阳能输入为920W/m2且聚焦光学部件收集面积为0.78m2，位于该楔位置处的功率大约是722W。以40％的效率来计，功率输出差不多为300瓦电能。合适的楔14在Fay的美国专利No.7238954和7286582中描述。这些参考文献在这里整体引入目的是为了描述用于本发明的适合的楔14。
PV盒10可通过增加聚焦光学部件4、准直光学部件12、楔14、折射光学部件16和光伏电池阵列18的尺寸，而调节为任何适合的尺寸。例如，如图4所示，聚焦光学部件4b可包括排列为三圈的36面镜子的阵列，总的直径为14m且收集面积为113m2。假设太阳能输入为920W/m2且聚焦光学部件收集面积为113m2，位于所述楔处的功率大约是105,000W。以40％的效率来计，功率输出差不多为42,000瓦电能。这种情况下，可使用面积为0.18m2的9个楔14。利用聚焦光学部件4a和4b收集的太阳能的量分别代表了适用于家庭和商业发电的实施例。
用于聚焦光学部件4的菲涅耳透镜和折射光学部件16可从Edmuds Optics或Opto Sigma，或Newport Optical得到。半导体光学栅楔14，如上文参考的美国专利所述可以通过TWO-SIX和Janos Optical得到。
可以利用常规的太阳能跟踪器(未示出)以便使聚焦光学部件4a、4b在0.1度内垂直于入射太阳辐射。
重要地，本发明的设置使光伏电池的线性阵列成为可能，所述光伏电池可以包括单结的III-V或Si光伏电池。任何数量的合适的光伏电池22-30可在该阵列中使用，虽然图中示出了5个，但是任何数量，例如3个，可以被使用，这取决于太阳能生成系统2的尺寸。这些“未堆叠的”太阳能电池阵列18使用丰富的且不那么昂贵的材料，具有低得多的工艺成本。由于每个光伏材料和电池由于所述楔而针对其适合的光波长或能量入射被优化，该光伏电池阵列18可具有超过40％的效率。转而，所述楔14具有与串联连接以增加电压的光伏电池阵列18的表面大约相同的折射率。另外，这些PV电池优选地通过外部电连接相互阻抗匹配以最大化整体电输出。
采用5个电池的阵列的情况下，第一个电池22可构造为吸收能量为0.95到1.15eV的太阳光子，第二个电池24可构造为吸收能量为1.20到1.4eV的太阳光子，第三个电池26可构造为吸收能量为1.45到1.7eV的太阳光子，第四个电池28可构造为吸收能量为1.75到2.1eV的太阳光子，并且第五个电池30可构造为吸收能量为2.15到2.18eV的太阳光子。
更特别地，电池22可以是GaInAsP，第二电池24可以是Si，第三电池26可以是GaAs，第四电池28可以是GaInP2，且第五电池30可以是Al2GaInP4。这些电池基于沿用已久的发光二极管或者LED工业技术。这些LED将电流转换为多个波长的光，每一个接近该材料的带隙。这些相同的LED(通过小的设计变更)能够接收通过楔分散的每个波长带内的太阳光并将其高效率地转化为电流。
这种基于的LED光伏电池可通过许多厂商获得，例如，Cree公司等。然而，合适的材料并不局限于上文列举的那些，还可包括用于优化太阳光谱的近红外不可见区域的光伏-电能转换的IV、III-V、或II-VI族材料类型的材料。适用于本发明的材料的进一步描述在Fay的U.S.5617206、7238954和7286582中描述。这些参考文献也通过该特定的引用结合到本文中。
如上文所述，光伏电池22-30的效率通过光学栅楔18提供，光学栅楔18引起的分散足够克服太阳角直径(9.3毫弧度)的光学产生的局限性。折射光学部件16完成分散且聚焦不同波长(光子能量)的光到不同的电池22-30。折射光学部件16进一步垂直于电池22-30在空间上分散光，以防止光伏阵列18的电池22-30过热。
设备的效率如图5所示。横跨太阳光谱大气层上的太阳光谱(图5中所描述的标题为AM0，或者在空气质量为零)如曲线52所示，并且生成的电瓦数如曲线54所示，其中以分段1、2、3、4、5表示的每个电池的太阳能转换范围对应于电池22、24、26、28、30。
尽管上文描述了根据本发明的特定的太阳能生成系统和方法，其目的是阐明本发明的优势，应当理解，本发明并不局限于此。就是说，本发明可合适地含有所描述的元件，由所描述的元件组成，或者基本由所描述的元件组成。进一步地，可以在缺少在此处未特别公开的任何元件的情况下，适当地实践本文所说明性地公开的发明。相应地，对本技术熟练人员来说的任何及所有变更、改变或等效设置，应视为在由所附权利要求界定的本发明的范围内。

Claims (18)

1.一种用于产生太阳光伏能量的设备，该设备包括：
用于聚焦太阳辐射的光学部件；
准直光学部件；
半导体光学栅楔，其设置成靠近所述准直光学部件的焦点，用于将入射的太阳辐射分散成多个相邻的波长带；
光伏电池阵列，每个电池由吸收通过所述楔分散的相应波长带并且将所述波长带转换成电能的材料形成；以及
折射光学部件，置于所述楔和所述阵列之间用于将分离的波长带引导到相应的光伏电池上。
2.如权利要求1所述的设备，其中每个电池包括单结的、III-V或者Si光伏电池。
3.如权利要求2所述的设备，其中所述阵列包括3个光伏电池。
4.如权利要求2所述的设备，其中所述阵列包括5个光伏电池。
5.如权利要求1所述的设备，其中所述阵列包括5个电池，第一个电池吸收能量为0.95到1.15eV的太阳光子，第二个电池吸收能量为1.2到1.4eV的太阳光子，第三个电池吸收能量为1.45到1.7eV的太阳光子，第四个电池吸收能量为1.75到2.1eV的太阳光子，并且第五个电池吸收能量为2.15到2.8eV的太阳光子。
6.如权利要求3所述的设备，其中第一电池是GaInAsP，第二电池是Si，第三电池是GaAs，第四电池是GaInP2，且第五电池是Al2GaInP4。
7.如权利要求1所述的设备，其中折射光学部件布置用于将来自所述楔的光空间分散到所述光伏电池上，垂直于电池表面入射。
8.如权利要求1所述的设备，其中所述楔包括防反射涂层以减少反射损失。
9.如权利要求1所述的设备，其中所述聚焦光学部件包括多面菲涅耳镜子。
10.如权利要求9所述的设备，其中所述聚焦光学部件包括4面菲涅耳镜子。
11.如权利要求9所述的设备，其中所述聚焦光学部件包括以3个同心圆排列的36面菲涅耳镜子。
12.一种最佳化光伏电池阵列的方法，所述方法包括：
将太阳辐射聚焦到半导体光学栅楔上；
通过所述栅楔将太阳辐射分散成多个相邻波长带；以及
大致与所述光伏电池阵列成直角地将所述相邻波长带引导到所述光伏电池阵列上，使得每个阵列元件的带隙能量匹配入射的光子能量。
13.如权利要求12所述的方法，进一步包括排列多个单结的、III-V或者Si光伏电池以形成光伏电池阵列。
14.如权利要求13所述的方法，其中排列多个电池包括排列3个相邻的电池。
15.如权利要求13所述的方法，其中排列多个电池包括排列5个相邻的电池。
16.如权利要求12所述的方法，其中聚焦光学部件包括多面菲涅耳镜子。
17.如权利要求16所述的方法，其中使用多面菲涅耳镜子包括使用4面菲涅耳镜子。
18.如权利要求16所述的方法，其中使用多面菲涅耳镜子包括使用36面菲涅耳镜子。
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