CN102033155A - Current detection circuit and method - Google Patents
Current detection circuit and method Download PDFInfo
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- CN102033155A CN102033155A CN 201010571923 CN201010571923A CN102033155A CN 102033155 A CN102033155 A CN 102033155A CN 201010571923 CN201010571923 CN 201010571923 CN 201010571923 A CN201010571923 A CN 201010571923A CN 102033155 A CN102033155 A CN 102033155A
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Abstract
The invention relates to a current detection circuit and a current detection method. The current detection circuit comprises a port circuit which is connected with a port, a first current mirror, a second current mirror and a processing circuit, wherein the port circuit is connected with the processing circuit through the first current mirror and the second current mirror respectively; and the first current mirror is connected with a power supply, and the second current mirror is grounded. Furthermore, sources of the first current mirror and the second current mirror adopt a diode connection method. The current detection circuit has a simple structure, can effectively detect the current magnitude and direction flowing in or out of the port, and cannot influence the normal working state of the port. Meanwhile, the current detection circuit is simple in application method and easy to operate. The current detection circuit and the current detection method can be widely applied to the fields of integrated circuits and the like.
Description
Technical field
The present invention relates to a kind of testing circuit and the application process of technical field of integrated circuits, refer more particularly to a kind of novel current detection circuit and application process thereof.
Background technology
In integrated circuit, usually need at present to detect the size of current and the direction of inflow or outflow port, and can not influence the normal operating conditions of port.But existing testing circuit generally can produce considerable influence to the duty of port, and structure is also very complicated simultaneously.
Summary of the invention
The objective of the invention is to propose a kind of current detection circuit and method, its circuit structure is succinct, can effectively detect the size of current and the direction of inflow or outflow port, and does not influence the normal operating conditions of port, thereby has overcome deficiency of the prior art.
For achieving the above object, the present invention has adopted following technical scheme:
A kind of current detection circuit, it is characterized in that, described testing circuit comprises port circuit, first current mirror, second current mirror and the treatment circuit that is connected with a port, described port circuit is connected with treatment circuit with second current mirror through first current mirror respectively, and first current mirror is connected with power supply (VDD), the second current mirror ground connection.
Say that further the source end of described first current mirror and second current mirror all adopts the diode connection.
Described first current mirror comprises PMOS pipe and the 2nd PMOS pipe, one first electric current flows out to port from port circuit, finally manage port by the VDD PMOS that flows through, this electric current is mirrored onto the 2nd PMOS and is in control an image current, this image current obtains a magnitude of voltage through a resistance, and this magnitude of voltage and a reference voltage obtain the threshold value of this first electric current after relatively;
Described second current mirror comprises NMOS pipe and the 2nd NMOS pipe, one second electric current flow into port circuit from port and finally flows through a NMOS pipe to ground, this electric current is mirrored onto the 2nd NMOS pipe, obtain another image current, this image current obtains another magnitude of voltage through another resistance, and this magnitude of voltage and another reference voltage relatively obtain the threshold value of this second electric current.
In first current mirror, in a comparer, compare through the magnitude of voltage that a resistance obtains by image current, and obtain one first comparative result with a reference voltage;
Same, in second current mirror, in another comparer, compare through the magnitude of voltage that a resistance obtains by image current, and obtain one second comparative result with another reference voltage;
Detect first comparative result and second comparative result, promptly learn the direction of sensed current and whether reach threshold value.
Adopt the method for current detection circuit detection electric current as mentioned above, it is characterized in that this method is:
If an electric current flow into port circuit from port and finally flows through second current mirror to ground, this electric current is mirrored onto treatment circuit and handles, and obtains one road image current;
Perhaps another electric current flows out to port from port circuit, finally flows through first current mirror to port by VDD, and this electric current is mirrored onto treatment circuit and handles, and obtains another road image current;
Detect the state of above-mentioned two-way image current, can learn the direction and the size of sensed current.
Particularly, described first current mirror comprises PMOS pipe and the 2nd PMOS pipe, one first electric current flows out to port from port circuit, finally manage port by the VDD PMOS that flows through, this electric current is mirrored onto the 2nd PMOS and is in control an image current, this image current obtains a magnitude of voltage through a resistance, and this magnitude of voltage and a reference voltage obtain one first comparative result after relatively in a comparer;
Described second current mirror comprises NMOS pipe and the 2nd NMOS pipe, one second electric current flow into port circuit from port and finally flows through a NMOS pipe to ground, this electric current is mirrored onto the 2nd NMOS pipe, obtain another image current, this image current obtains another magnitude of voltage through another resistance, and this magnitude of voltage and another reference voltage obtain one second comparative result after relatively in another comparer;
Detect first comparative result and second comparative result, promptly learn the direction of sensed current and whether reach threshold value.
Description of drawings
Fig. 1 is the structured flowchart of current detection circuit of the present invention;
Fig. 2 is the circuit diagram of a preferred embodiment of the present invention.
Embodiment
See also Fig. 1, testing circuit of the present invention comprises port circuit, current mirror 1, current mirror 2 and the treatment circuit that is connected with a port A, port circuit is connected with treatment circuit with current mirror 2 through current mirror 1 respectively, and current mirror 1 is connected current mirror 2 ground connection (GND) with power supply (VDD);
Finally flow through current mirror 2 to ground when electric current flow into port circuit from port A, and this electric current is mirrored onto treatment circuit and handles accordingly; Equally, when electric current flows out to port A from port circuit, finally flow through current mirror 1 to A by VDD, this electric current is mirrored onto treatment circuit and handles accordingly, just can know the direction of sensed current and whether reach threshold value (or size) by this two-way image current, and current mirror 1, the source end of current mirror 2 generally is the diode connection, its equivalent resistance is very little, and is very little to existing port circuit influence.
Be a preferred embodiment of the present invention as shown in Figure 2, it comprises two PMOS pipes, two NMOS pipes, two resistance, two comparers; First, second PMOS pipe P1P2 forms first current mirror module, and first, second NMOS pipe N1 N2 forms second current mirror module;
The source electrode of first, second PMOS pipe meets VDD, the be connected together drain electrode of a PMOS pipe of grid, and the drain electrode of the 2nd PMOS pipe is by first resistance eutral grounding; The be connected together drain electrode of a NMOS pipe of the source ground of first, second NMOS pipe, grid, the drain electrode of the 2nd NMOS pipe meets VDD by second resistance; The drain electrode output of the 2nd PMOS pipe connects the in-phase end of first comparer, anti-phase termination first reference voltage of first comparer, and comparer is output as Y1; The drain electrode output of the 2nd NMOS pipe connects the in-phase end of second comparer, anti-phase termination second reference voltage of second comparer, and comparer is output as Y2;
When flowing into port circuit from port A, electric current I 1 finally flows through a NMOS pipe to ground, this electric current is mirrored onto the 2nd NMOS pipe, obtain electric current N* (I1), N is first, second NMOS pipe mirror image ratio, obtain a magnitude of voltage through second resistance, N* (I1) * (R2) can obtain the threshold value of this electric current by relatively this magnitude of voltage and reference voltage; Equally, when electric current I 2 flows out to port A from port circuit, finally manage A by the VDD PMOS that flows through, this electric current is mirrored onto the 2nd PMOS pipe, obtain electric current M* (I2), M is second, the one PMOS pipe mirror image ratio, obtain a magnitude of voltage through first resistance, M* (I2) * (R1), can obtain the threshold value of this electric current by relatively this magnitude of voltage and reference voltage, just can know the direction of sensed current and whether reach threshold value as long as detect the state of Y1 Y2, and a PMOS manage, the one NMOS pipe is the diode connection, its equivalent resistance is very little, and is very little to existing port circuit influence.
Above-mentioned preferred embodiment only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (6)
1. current detection circuit, it is characterized in that, described testing circuit comprises port circuit, first current mirror, second current mirror and the treatment circuit that is connected with a port, described port circuit is connected with treatment circuit with second current mirror through first current mirror respectively, and first current mirror is connected with power supply, the second current mirror ground connection.
2. current detection circuit according to claim 1 is characterized in that, the source end of described first current mirror and second current mirror all adopts the diode connection.
3. the current detection circuit of stating according to claim 1 or 2 is characterized in that:
Described first current mirror comprises PMOS pipe and the 2nd PMOS pipe, one first electric current flows out to port from port circuit, the final VDD PMOS that flows through manages port, this electric current is mirrored onto the 2nd PMOS and is in control an image current, this image current obtains a magnitude of voltage through a resistance, and this magnitude of voltage and a reference voltage obtain the threshold value of this first electric current after relatively;
Described second current mirror comprises NMOS pipe and the 2nd NMOS pipe, one second electric current flow into port circuit from port and finally flows through a NMOS pipe to ground, this electric current is mirrored onto the 2nd NMOS pipe, obtain another image current, this image current obtains another magnitude of voltage through another resistance, and this magnitude of voltage and another reference voltage relatively obtain the threshold value of this second electric current.
4. current detection circuit according to claim 3 is characterized in that:
In first current mirror, in a comparer, compare through the magnitude of voltage that a resistance obtains by image current, and obtain one first comparative result with a reference voltage;
Same, in second current mirror, in another comparer, compare through the magnitude of voltage that a resistance obtains by image current, and obtain one second comparative result with another reference voltage;
Detect first comparative result and second comparative result, learn promptly whether the direction of sensed current and size of current reach threshold value.
5. adopt the method for current detection circuit detection electric current according to claim 1, it is characterized in that this method is:
If an electric current flow into port circuit from port and finally flows through second current mirror to ground, this electric current is mirrored onto treatment circuit and handles, and obtains one road image current;
Perhaps another electric current flows out to port from port circuit, finally flows through first current mirror to port by VDD, and this electric current is mirrored onto treatment circuit and handles, and obtains another road image current;
Detect the state of above-mentioned two-way image current, can learn the direction and the size of sensed current.
6. employing according to claim 5 is the method for current detection circuit detection electric current according to claim 1, it is characterized in that,
Described first current mirror comprises PMOS pipe and the 2nd PMOS pipe, one first electric current flows out to port from port circuit, finally manage port by the VDD PMOS that flows through, this electric current is mirrored onto the 2nd PMOS and is in control an image current, this image current obtains a magnitude of voltage through a resistance, and this magnitude of voltage and a reference voltage obtain one first comparative result after relatively in a comparer;
Described second current mirror comprises NMOS pipe and the 2nd NMOS pipe, one second electric current flow into port circuit from port and finally flows through a NMOS pipe to ground, this electric current is mirrored onto the 2nd NMOS pipe, obtain another image current, this image current obtains another magnitude of voltage through another resistance, and this magnitude of voltage and another reference voltage obtain one second comparative result after relatively in another comparer;
Detect first comparative result and second comparative result, promptly learn the direction of sensed current and whether reach threshold value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010571923 CN102033155A (en) | 2010-12-03 | 2010-12-03 | Current detection circuit and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010571923 CN102033155A (en) | 2010-12-03 | 2010-12-03 | Current detection circuit and method |
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| Publication Number | Publication Date |
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| CN102033155A true CN102033155A (en) | 2011-04-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010571923 Pending CN102033155A (en) | 2010-12-03 | 2010-12-03 | Current detection circuit and method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106199129A (en) * | 2015-04-29 | 2016-12-07 | 台达电子工业股份有限公司 | High-side current monitoring device |
| CN108768360A (en) * | 2018-08-22 | 2018-11-06 | 苏州华芯微电子股份有限公司 | A kind of current foldback circuit |
| CN114563620A (en) * | 2022-02-28 | 2022-05-31 | 周亚萍 | Circuit and method for identifying signal transmission direction of electric circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1229922A (en) * | 1998-01-16 | 1999-09-29 | 日本电气株式会社 | Current sensing circuit |
| CN1956334A (en) * | 2005-10-27 | 2007-05-02 | 三洋电机株式会社 | Low voltage detection circuit |
| CN201319582Y (en) * | 2008-12-03 | 2009-09-30 | 苏州市华芯微电子有限公司 | Radio frequency signal preamplifying circuit |
| CN201886068U (en) * | 2010-12-03 | 2011-06-29 | 苏州华芯微电子股份有限公司 | Current detecting circuit |
-
2010
- 2010-12-03 CN CN 201010571923 patent/CN102033155A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1229922A (en) * | 1998-01-16 | 1999-09-29 | 日本电气株式会社 | Current sensing circuit |
| CN1956334A (en) * | 2005-10-27 | 2007-05-02 | 三洋电机株式会社 | Low voltage detection circuit |
| CN201319582Y (en) * | 2008-12-03 | 2009-09-30 | 苏州市华芯微电子有限公司 | Radio frequency signal preamplifying circuit |
| CN201886068U (en) * | 2010-12-03 | 2011-06-29 | 苏州华芯微电子股份有限公司 | Current detecting circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106199129A (en) * | 2015-04-29 | 2016-12-07 | 台达电子工业股份有限公司 | High-side current monitoring device |
| CN106199129B (en) * | 2015-04-29 | 2019-12-10 | 台达电子工业股份有限公司 | high-end current monitoring device |
| CN108768360A (en) * | 2018-08-22 | 2018-11-06 | 苏州华芯微电子股份有限公司 | A kind of current foldback circuit |
| CN114563620A (en) * | 2022-02-28 | 2022-05-31 | 周亚萍 | Circuit and method for identifying signal transmission direction of electric circuit |
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