CN102024877A - Oxidation treatment process of crystalline silicon solar cell - Google Patents
Oxidation treatment process of crystalline silicon solar cell Download PDFInfo
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- CN102024877A CN102024877A CN2010105076422A CN201010507642A CN102024877A CN 102024877 A CN102024877 A CN 102024877A CN 2010105076422 A CN2010105076422 A CN 2010105076422A CN 201010507642 A CN201010507642 A CN 201010507642A CN 102024877 A CN102024877 A CN 102024877A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an oxidation treatment process of a crystalline silicon solar cell, comprising the following steps: (1) heating dry oxygen pre-oxidation: a silicon wafer is pushed into an oxidation tube, the temperature is increased to 850-900 DEG C, dry oxygen is introduced, oxidation is carried out, and a silicon dioxide layer is formed on the surface of the silicon wafer, wherein the reaction time is 100-600 seconds; (2) high temperature chlorine-doped oxidation: dry oxygen is continuously introduced, the temperature is increased to 900-950 DEG C, trichloroethane is introduced, and the condition is maintained for 1500-2500 seconds; (3) constant temperature propulsive oxidation: the temperature in step (2) is maintained, the introduction of trichloroethane is stopped, dry oxygen is continuously introduced, and the condition is maintained for 300-800 seconds; and (4) temperature reduction: the introduction of dry oxygen is stopped, and the silicon wafer is taken out from the oxidation tube. In the oxidation treatment process provided by the invention, the processing time of the whole process is greatly reduced, and the problems that resource waste is caused by long-time oxidation and the capacity is reduced are avoided, thus having positive realistic significance.
Description
Technical field
The present invention relates to a kind of oxidation processing technique of crystal silicon solar energy battery, belong to crystal silicon solar energy battery and make the field.
Background technology
The world today, the lasting use of conventional energy resource has brought a series of economy and social concerns such as energy scarcity and ecological deterioration, the development solar cell be address the above problem by way of one of.Therefore, countries in the world are all at the active development solar cell, and high conversion efficiency, low cost are the solar cell main development tendency, also are the targets that technical research person pursues.
At present, in all kinds of solar cells, crystal silicon solar energy battery has accounted for 90% the market share, and wherein the transformation efficiency of monocrystalline silicon battery has surpassed 17%, and the polycrystal silicon cell transformation efficiency also surpasses 16%.How appending under the not many prerequisite at cost, improving electricity conversion by a relatively large margin is the target that everybody pays close attention to.Wherein, selective emitter junction (Selective Emitter) is an extraordinary selection, and its concrete structure is: (1) below gate electrode line and near zone form heavily doped region, to improve open circuit voltage, reduce contact resistance, improve fill factor, curve factor; (2) form shallow doped region in non-grid region,, improve short wave response and carrier collection rate, thereby improve short circuit current to obtain surface passivation effect preferably.
The preparation method of existing crystalline silicon solar cell selective emitter junction mainly is twice diffusion technology.Twice diffusion technology mainly is the diffusion mask of growing on the crystal silicon chip matte earlier, etches out the gate electrode line zone again, forms the structure of heavy doping and shallow doping then by twice thermal diffusion (heavily diffusion and gently diffusion).Wherein, growth diffusion mask generally adopts dry-oxygen oxidation technology on the crystal silicon chip matte, promptly prepares the masking film of layer of silicon dioxide film as the selectivity diffusion at silicon chip surface.For dry-oxygen oxidation technology, oxygen molecule arrives silicon dioxide one silicon face in the mode of diffusion by oxide layer, reacts with silicon, generates certain thickness silicon dioxide layer.
Yet existing dry-oxygen oxidation speed is very slow, need continue more than 2 hours for 900～1200 ℃ by high temperature in oxidation tube, and the dried oxygen of feeding of simultaneously big flow just can obtain required technology thickness.Obviously, this long oxidation processing technique has not only expended resources such as a large amount of electricity, gas, has increased production cost, but also has reduced the production production capacity relatively.In addition, the oxide-film uniformity that makes of above-mentioned process (thickness difference in the sheet) and repeated (thickness difference between sheet) are poor.
Summary of the invention
The object of the invention provides a kind of oxidation processing technique of crystal silicon solar energy battery, with the shortening processing time, and the oxide-film that obtains to have excellent homogeneity and repeatability.
For achieving the above object, the technical solution used in the present invention is: a kind of oxidation processing technique of crystal silicon solar energy battery comprises the steps:
(1) the dried oxygen pre-oxidation of intensification: silicon chip is pushed in the oxidation tube, be warming up to 850～900 ℃, feed dried oxygen, carry out oxidation reaction, generate the layer of silicon dioxide layer at silicon chip surface; Reaction time is 100～600s, and dried oxygen flow is 8～30L/min;
(2) high temperature is mixed oxychloride: continue to feed dried oxygen, be warming up to 900～950 ℃, feed trichloroethanes, the nitrogen flow that carries trichloroethanes is 0.5～2.5L/min, and dried oxygen flow is 8～30L/min, continues 1500～2500s;
(3) constant temperature advances oxidation: keep the temperature of step (2), stop logical trichloroethanes, continue to feed dried oxygen, continue 300～800s; Dried oxygen flow is 8～30L/min;
(4) cooling stops logical dried oxygen, and silicon chip is withdrawed from oxidation tube.
The present invention is divided into oxidation technology that oxychloride is mixed in the dried oxygen pre-oxidation that heats up, high temperature, constant temperature advances three steps of oxidation to carry out; Promptly at first under the situation that temperature rises, adopt dry-oxygen oxidation, determine certain thickness silicon dioxide thickness, under predetermined temperature, feed trichloroethanes and dried oxygen then, can effectively accelerate reaction rate, shorten the reaction time, last under the situation of constant temperature, feed the dried oxygen of certain hour, so that thickness is more even, shield effectiveness is better.
Working mechanism of the present invention is: mix trichloroethanes in oxidizing gas after, oxidation rate and quality of oxide layer all have raising, for the variation of oxidation rate: (1) when mixing oxychloride product H is arranged
2O, accelerated oxidation; (2) chlorine has played the catalyst of oxygen and pasc reaction; The chlorine atom can reduce sodium ion and stain passivation SiO
2The activity of middle sodium ion suppresses the thermal oxidation defective, improves breakdown characteristics; Be improved through the silicon chip minority carrier life time of mixing oxychloride, final battery sheet efficient also increases.
Because the technique scheme utilization, the present invention compared with prior art has following advantage:
1. the present invention has developed a kind of oxidation processing technique of new crystal silicon solar energy battery, has shortened the processing time of whole technology greatly, has avoided problems such as waste resource that long oxidation processes brings, production capacity reduction, has active operation significance.
2. the silicon dioxide oxide-film that oxidation processing technique of the present invention prepares has good homogeneous and repeatability, the shield effectiveness preferably that has, and, the photoelectric conversion efficiency of the solar cell that the battery sheet that is obtained by this technology makes has had further raising, has obtained unexpected effect.
3. treatment process of the present invention is simple, and easy operating is suitable for applying.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one:
A kind of oxidation processing technique of crystal silicon solar energy battery comprises the steps:
(1) the dried oxygen pre-oxidation of intensification: silicon chip is pushed in the oxidation tube, be warming up to 850 ℃, feed dried oxygen, carry out oxidation reaction, generate the layer of silicon dioxide layer at silicon chip surface; Reaction time is 500s, and dried oxygen flow is 20L/min
(2) high temperature is mixed oxychloride: continue to feed dried oxygen, be warming up to 900 ℃, feed trichloroethanes, the nitrogen flow that carries trichloroethanes is 1.5L/min, and dried oxygen flow is 20L/min, continues 1500s;
(3) constant temperature advances oxidation: keep 900 ℃, stop logical trichloroethanes, continue to feed dried oxygen, continuing the dried oxygen flow of 800s is 20L/min;
(4) cooling stops logical dried oxygen, and silicon chip is withdrawed from oxidation tube.
To the battery sheet that makes according to above-mentioned technology, test its thickness with 5 methods of testing of ellipsometer, according to formula
Calculate its unevenness, simultaneously, at AM1.5, light intensity 1000W, measured the photoelectric conversion efficiency of the solar cell of making through this PROCESS FOR TREATMENT under 25 ℃ of conditions of temperature, the result is as shown in the table:
| Numbering | Unevenness | Photoelectric conversion efficiency |
| 1 | 3.03％ | 18.44％ |
| 2 | 2.91％ | 18.40％ |
| 3 | 5.38％ | 18.41％ |
| 4 | 2.17％ | 18.44％ |
| 5 | 4.17％ | 18.43％ |
| Mean value | 3.53％ | 18.42％ |
Comparative Examples one:
Adopt existing dry-oxygen oxidation technology, high temperature continues 2 hours for 1000 ℃ in oxidation tube, feeds dried oxygen simultaneously, carries out oxidation reaction, and dried oxygen flow is 30L/min; Make battery sheet with earth silicon mask.Test its unevenness then, measured the photoelectric conversion efficiency of utilizing the solar cell that this battery sheet makes simultaneously, the result is as shown in the table:
| Numbering | Unevenness | Photoelectric conversion efficiency |
| 1 | 6.67％ | 18.29％ |
| 2 | 11.54％ | 18.25％ |
| 3 | 4.95％ | 18.05％ |
| 4 | 4.26％ | 18.21％ |
| 5 | 4.17％ | 18.27％ |
| Mean value | 6.32％ | 18.22％ |
From the contrast of above-mentioned 2 tables as can be seen, with respect to existing dry-oxygen oxidation technology, the average unevenness of silicon dioxide thickness that the present invention makes has descended 2.79%, and has better repeatability; Utilize the photoelectric conversion efficiency of the solar cell that this battery sheet makes to improve 0.2%.
Claims (1)
1. the oxidation processing technique of a crystal silicon solar energy battery is characterized in that, comprises the steps:
(1) the dried oxygen pre-oxidation of intensification: silicon chip is pushed in the oxidation tube, be warming up to 850～900 ℃, feed dried oxygen, carry out oxidation reaction, generate the layer of silicon dioxide layer at silicon chip surface; Reaction time is 100～600s, and dried oxygen flow is 8～30L/min;
(2) high temperature is mixed oxychloride: continue to feed dried oxygen, be warming up to 900～950 ℃, feed trichloroethanes, the nitrogen flow that carries trichloroethanes is 0.5～2.5L/min, and dried oxygen flow is 8～30L/min, continues 1500～2500s;
(3) constant temperature advances oxidation: keep the temperature of step (2), stop logical trichloroethanes, continue to feed dried oxygen, continue 300～800s; Dried oxygen flow is 8～30L/min;
(4) cooling stops logical dried oxygen, and silicon chip is withdrawed from oxidation tube.
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| CN2010105076422A CN102024877A (en) | 2010-10-15 | 2010-10-15 | Oxidation treatment process of crystalline silicon solar cell |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522334A (en) * | 2011-12-15 | 2012-06-27 | 天津中环领先材料技术有限公司 | Technology for preparing monocrystalline silicon wafer back sealing material used in IGBT by using high temperature oxidation process |
| CN103021842A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Back seal process for achieving high-speed SiO2 film sedimentation on monocrystalline silicon wafer |
| CN103618028A (en) * | 2013-11-15 | 2014-03-05 | 中电电气（南京）光伏有限公司 | Method for preparing surface-passivated PN joint and crystalline silicon solar cell |
| CN107293613A (en) * | 2017-05-10 | 2017-10-24 | 东方环晟光伏（江苏）有限公司 | Realize the method that thermal oxide passivation layer cell piece makes |
| CN115101622A (en) * | 2022-06-02 | 2022-09-23 | 浙江晶科能源有限公司 | Solar cell, manufacturing method thereof and photovoltaic module |
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| CN201112399Y (en) * | 2007-09-27 | 2008-09-10 | 江苏林洋新能源有限公司 | Solar energy battery with condensed-boron condensed-phosphorus diffusion structure |
| CN101447529A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Silica generation technology during manufacturing process of selective emitter solar cells |
| CN101587920A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Process for surface diffusion treatment of silicon chip of solar cell |
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2010
- 2010-10-15 CN CN2010105076422A patent/CN102024877A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201112399Y (en) * | 2007-09-27 | 2008-09-10 | 江苏林洋新能源有限公司 | Solar energy battery with condensed-boron condensed-phosphorus diffusion structure |
| CN101447529A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Silica generation technology during manufacturing process of selective emitter solar cells |
| CN101587920A (en) * | 2009-04-02 | 2009-11-25 | 常州天合光能有限公司 | Process for surface diffusion treatment of silicon chip of solar cell |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522334A (en) * | 2011-12-15 | 2012-06-27 | 天津中环领先材料技术有限公司 | Technology for preparing monocrystalline silicon wafer back sealing material used in IGBT by using high temperature oxidation process |
| CN103021842A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Back seal process for achieving high-speed SiO2 film sedimentation on monocrystalline silicon wafer |
| CN103021842B (en) * | 2012-12-03 | 2014-12-31 | 天津中环领先材料技术有限公司 | Back seal process for achieving high-speed SiO2 film sedimentation on monocrystalline silicon wafer |
| CN103618028A (en) * | 2013-11-15 | 2014-03-05 | 中电电气（南京）光伏有限公司 | Method for preparing surface-passivated PN joint and crystalline silicon solar cell |
| CN103618028B (en) * | 2013-11-15 | 2016-06-15 | 中电电气（南京）光伏有限公司 | A kind of method and equipment preparing PN knot and the crystal silicon solar energy battery with surface passivation |
| CN107293613A (en) * | 2017-05-10 | 2017-10-24 | 东方环晟光伏（江苏）有限公司 | Realize the method that thermal oxide passivation layer cell piece makes |
| CN115101622A (en) * | 2022-06-02 | 2022-09-23 | 浙江晶科能源有限公司 | Solar cell, manufacturing method thereof and photovoltaic module |
| CN115101622B (en) * | 2022-06-02 | 2024-02-06 | 浙江晶科能源有限公司 | Solar cell, manufacturing method thereof and photovoltaic module |
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Application publication date: 20110420 |