CN102024861A - 具深蚀刻孔洞的基板式太阳能电池 - Google Patents

具深蚀刻孔洞的基板式太阳能电池 Download PDF

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CN102024861A
CN102024861A CN201010244543XA CN201010244543A CN102024861A CN 102024861 A CN102024861 A CN 102024861A CN 201010244543X A CN201010244543X A CN 201010244543XA CN 201010244543 A CN201010244543 A CN 201010244543A CN 102024861 A CN102024861 A CN 102024861A
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Abstract

一种具深蚀刻孔洞的基板式太阳能电池，是以半导体材料为基板的太阳能电池，可为单晶(Single Crystal)、多晶(Polycrystal)或无晶系(Amorphous)等结构，具有数个经由蚀刻或加工等方式形成的深孔洞，且各深孔洞的深度含该基板厚度的四分之一以上，或各深孔洞的洞底表面距离该基板孔洞侧的另一侧表面是含五十微米以下。本发明可降低载子(Carrier)再次结合的机率，增加光能/电能转换效率，不必使用埋藏式电极(buried contact)。

Description

具深蚀刻孔洞的基板式太阳能电池
技术领域
本发明涉及一种具深蚀刻孔洞的基板式太阳能电池，尤指一种以整个半导体基板为太阳能电池，该半导体基板具有数个深孔洞，不必使用埋藏式电极(buriedcontact)。
背景技术
请参阅图5所示，已知的基板式太阳能电池通常包含一半导体基板7，其中是以一N型半导体层71与一P型半导体层72，形成一P-N接面(P-N junction)73，并包含一前电极74及一背电极75。当太阳光照射电池正面76时，入射光穿透该电池正面76并在靠近电池表面区被吸收，产生电子与电洞两种载子(Carrier)，之后各向该前电极74与该背电极75处靠拢，以形成端电压差。然而，由于太阳光会在该电池正面76产生一部分反射而无法全部入射至该半导体基板7内部，使太阳能电池产生电力的效率不佳。据此，一般通常是将该电池正面76制成凹凸不平整的表面，抑或在该电池正面76镀制一抗反射膜，更甚有将上述两者予以结合，藉此达到抗反射的目的，以使大部分太阳光入射至太阳能电池内吸收，进而产生较多的电力。如图6所示，上述凹凸不平整的表面，是可在太阳光的光线8a射向凹凸表面77时，使大部分能量进入太阳能电池内，而部分反射的光线8b则可再次射向该电池板内被电池吸收而产生电力，而该基板式太阳能电池在背光侧亦含有一背表面场(Back Surface Field)78，以增加太阳能电池的效率。
然而，在前述基板式太阳能电池中，由于该P型半导体层72厚度几乎是整个基板的厚度，而该N型半导体层71则较薄。当太阳光照射时，少数载子的扩散长度不够长，电子电洞易再次结合，如此将不利于电子及电洞分别累积至该前电极74及该背电极75处，因此电力的输出会遭减弱，造成太阳光能转成电能的转换效率有限。
一般基板式太阳能电池的材料为硅，有单晶、多晶及无晶系三种。以光能/电能转换效率而言，单晶系不仅比多晶系优越，并且又比无晶系佳。而为解决上述载子扩散长度短的问题，通常将太阳能电池制成硅薄膜型态。然而，薄膜型态的太阳能电池却含有无法将太阳光完全吸收利用的缺点，以致其光能/电能的转换效率不佳；再者，若以硅薄膜制成于非硅半导体基板上则不易形成单晶结构或缺陷较少的多晶结构，因此其光能/电能的转换效率亦同样不佳。故，一般无法符合使用者于实际使用时所需。
发明内容
本发明所要解决的技术问题是：针对上述现有技术的不足，提供一种具深蚀刻孔洞的基板式太阳能电池，以整个半导体基板为太阳能电池，该半导体基板具有数个深孔洞，可降低载子再次结合的机率，进而增加光能成电能的转换效率，不必使用埋藏式电极(buried contact)。
为了解决上述技术问题，本发明所采用的技术方案是：一种具深蚀刻孔洞的基板式太阳能电池，包含半导体基板、半导体层、P-N接面，该半导体层位于该半导体基板一侧的表面上，该P-N接面由该半导体基板与该半导体层构成，其特点是：所述半导体基板包含数个深孔洞，构成孔洞区与平坦区；各深孔洞的深度为基板厚度的四分之一以上。
如此，以半导体材料为基板的太阳能电池，具有数个经由蚀刻或加工等方式形成的深孔洞，可降低载子再次结合的机率，以增加该基板式太阳能电池的光能/电能转换效率，不必使用埋藏式电极。
附图说明
图1是本发明一实施例的剖面示意图。
图2是本发明沟槽状深孔洞的示意图。
图3是本发明独立式深孔洞的示意图。
图4是本发明另一实施例的剖面示意图。
图5是已知的太阳能电池板。
图6是已知太阳能电板的凹凸表面示意图。
标号说明：
基板式太阳能电池1、5    P型半导体层11、51
深孔洞12、52            沟槽状121
独立孔洞式122           N型半导体层13、53
P-N接面14、54           前电极15、55
背电极16、56            孔洞区的电池表面17、57
平坦区的电池表面18、58  背表面场19、78
太阳光线2、3、6         受光侧的电池正面59
半导体基板7             N型半导体层71
P型半导体层72           P-N接面73
前电极74                背电极75
电池正面76              凹凸表面77
光线8a、8b
具体实施方式
请参阅图1所示，为本发明一实施例的剖面示意图。如图所示：本发明为一种具深蚀刻孔洞的基板式太阳能电池，包含以半导体材料为基板的太阳能电池，可为单晶(Single Crystal)、多晶(Polycrystal)或无晶系(Amorphous)的结构，并具有数个经由半导体制程的湿蚀刻、干蚀刻、激光(Laser)亦或机械加工等方式形成的深孔洞，且各深孔洞的深度是基板厚度的四分之一以上，或各深孔洞的洞底表面距离基板背光侧表面是五十微米以下。
该基板式太阳能电池1为一半导体基板，且该半导体基板是以硅(Silicon)或锗(Germanium)等第四族元素及其化合物，或三、五族元素及其化合物为半导体材料的P型半导体层11。在该基板式太阳能电池1的受光侧上包含有数个独立式深孔洞或沟槽状深孔洞12，于该受光侧上构成孔洞区与平坦区，且在该受光侧的表面制有一N型半导体层13，与该P型半导体层11形成一P-N接面(P-NJunction)14。在该受光侧表面及背光侧表面各自含有一前电极15及一背电极16，可将电能引导输出至外部电路，其中，在该受光侧的前电极15可设置于该孔洞区的电池表面17或该平坦区的电池表面18，同时在背光侧亦含有一背表面场19；以及，该具有孔洞区与平坦区的受光侧可进一步含有抗反射膜，或其表面可呈现为凹凸状的抗反射表面，或其表面可呈现为凹凸状且含有抗反射膜。以上所述，构成全新的基板式太阳能电池1。
当本发明于运用时，若太阳光线2照射在该平坦区的电池表面18，该光线2于近表面处被吸收，产生电子及电洞载子(Carrier)。若太阳光线3照射在该孔洞区的电池表面17，其在电池内部产生的电子电洞载子系处在较薄的太阳能电池板中，可使载子的扩散长度增加，因而降低载子再次结合的机率，使该前电极16及该背电极17处可累积较多的电荷，进而产生较多的电力；另外，由于该基板式太阳能电池1所具有的深孔洞12，其口径是由表面开口处向半导体基板内部延伸呈逐渐缩小状、放大状或一直维持不变，于缩小下可谓为一斜面深孔，故可造成电池表面的受光面积增加，相对而言，产生电子电洞的面积区域亦同样增加，进而可使产生的电力增大，提升光能/电能转换效率，不必使用埋藏式电极(buried contact)。
请进一步参阅图2及图3所示，分别为本发明沟槽状深孔洞的示意图及本发明独立式深孔洞的示意图。如图所示：本发明的基板式太阳能电池1上，各深孔洞12的结构可为沟槽状121或独立式122，并且，该沟槽状型态可为直线型或非直线型布置，而该独立孔洞式型态的开口则可为几何形状。
请参阅图4所示，为本发明另一实施例的剖面示意图。如图所示：本发明的基板式太阳能电池5为一半导体基板，且该半导体基板以硅或锗等第四族元素及其化合物，或三、五族元素及其化合物为半导体材料的P型半导体层51。在该基板式太阳能电池5的背光侧上包含有数个独立式深孔洞或沟槽状深孔洞52，于该背光侧上构成孔洞区与平坦区，且在该基板式太阳能电池5另一面的受光侧表面制有一N型半导体层53，与该P型半导体层51形成一P-N接面54。在该受光侧表面及背光侧表面各自含有一前电极55及一背电极56，可将电能引导输出至外部电路，其中，在该背光侧的背电极56可设置于该孔洞区的电池表面57、该平坦区的电池表面58或布满整个背光侧表面，同时在背光侧亦含有一背表面场19；该受光侧可进一步含有抗反射膜，或呈现为凹凸状的抗反射表面，或其表面呈现为凹凸状且含有抗反射膜。
当本发明于运用时，若太阳光线6照射在该受光侧的电池正面59，由于具有深孔洞52的缘故，因而在许多处所该背电极56是十分靠近该N型半导体层53，可降低光能被吸收后产生电子电洞再次结合的机率，因此进入电池内部的光能转换为电子电洞的载子可分别向该前电极55及该背电极56累积，使该前电极55、背电极56处可累积较多的电荷，以产生较大的电力，故可提升该基板式太阳能电池5光能/电能转换效率；另外，该基板式太阳能电池5所具有的深孔洞52亦可具斜角度，其口径由表面开口处向半导体基板内部延伸呈逐渐缩小状、放大状或一直维持不变，亦同样皆可达到上述提升太阳能电池效率的目的。
如上所述，本发明虽然是在P型半导体基板上制成深孔洞结构以增加光能/电能转换效率，然，本发明的深孔洞结构亦可实施于N型半导体基板上，且其提升太阳能电池效率的原理亦分别同于图1及图4两实施例。
综上所述，本发明为一种具深蚀刻孔洞之基板式太阳能电池，可有效改善现有技术的种种缺点，是以半导体材料为基板的太阳能电池，具有数个经由蚀刻或加工等方式形成的深孔洞，可降低载子再次结合的机率，以增加该基板式太阳能电池的光能/电能转换效率，不必使用埋藏式电极，进而能产生更进步、更实用、更符合使用者的所须，确已符合发明专利申请的要件，依法提出专利申请。

Claims (17)

1.一种具深蚀刻孔洞的基板式太阳能电池，包含半导体基板、半导体层、P-N接面，该半导体层位于该半导体基板一侧的表面上，该P-N接面由该半导体基板与该半导体层构成，其特征在于：所述半导体基板包含数个深孔洞，构成孔洞区与平坦区；各深孔洞的深度为基板厚度的四分之一以上。
2.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述半导体基板为P型半导体，而该半导体层为N型半导体。
3.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述半导体基板为N型半导体，而该半导体层为P型半导体。
4.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述深孔洞经湿蚀刻、干蚀刻、激光或机械加工方式所形成。
5.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述深孔洞为独立式深孔洞。
6.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述深孔洞为沟槽状深孔洞。
7.如权利要求6所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述沟槽状深孔洞的沟槽状型态为直线型或非直线型。
8.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述深孔洞形成于该半导体基板的受光侧。
9.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述深孔洞形成于该半导体基板的背光侧。
10.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述各深孔洞的洞底表面距离该基板孔洞侧的另一侧表面五十微米以下。
11.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述半导体材料为硅、或锗等第四族元素及其化合物、或三、五族元素及其化合物。
12.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述半导体基板的受光侧及背光侧表面各含有一将电能引导输出至外部电路的电极。
13.如权利要求12所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述电极设置该半导体基板一侧的孔洞区的电池表面或平坦区的电池表面，而背光侧含有背表面场。
14.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述数个深孔洞的个别口径是从开口处向基板内部延伸呈逐渐缩小状、逐渐放大状或维持不变。
15.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述具有孔洞区与平坦区的一侧含有抗反射膜。
16.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述具有孔洞区与平坦区的一侧呈现为凹凸状的抗反射表面。
17.如权利要求1所述的具深蚀刻孔洞的基板式太阳能电池，其特征在于：所述具有孔洞区与平坦区的一侧表面呈现为凹凸状，且含有抗反射膜。
CN201010244543XA 2009-09-09 2010-08-04 具深蚀刻孔洞的基板式太阳能电池 Pending CN102024861A (zh)

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