CN102024692A - Manufacturing method of oxide layer between splitting grids - Google Patents
Manufacturing method of oxide layer between splitting grids Download PDFInfo
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- CN102024692A CN102024692A CN2009101962050A CN200910196205A CN102024692A CN 102024692 A CN102024692 A CN 102024692A CN 2009101962050 A CN2009101962050 A CN 2009101962050A CN 200910196205 A CN200910196205 A CN 200910196205A CN 102024692 A CN102024692 A CN 102024692A
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Abstract
The invention relates to a manufacturing method of an oxide layer between splitting grids, which comprises the following step of: carrying out in-situ vapor generation by using a rapid thermal processing device so as to form the oxide layer on the surface of a common source region between the splitting grids. The manufacturing method can accurately control the thickness of the oxide layer formed on the highly doped common source region so as to avoid over thickness of the oxide layer. Moreover, the thickness of the formed oxide layer is uniform, and the smiling effect is improved.
Description
Technical field
The present invention relates to memory manufacturing technology field, particularly the manufacture method of oxide layer between splitting bar.
Background technology
Flash memory generally adopts the memory cell structure of multi-layer gate polar form.With reference to shown in Figure 1, the memory cell transistor with stacked gate structure except that drain electrode 11, source electrode 12 and grid 13, also has floating boom 14.The preservation of data realizes by the floating boom in the control store cell transistor 14 (floating gate) stored charge amount.For the memory cell transistor of this kind structure, under the unsettled situation of floating boom, will cause " cross and wipe " (over erase).
In view of this, prior art provides corresponding solution, and for example with reference to shown in Figure 2, Sanyo's semiconductor has proposed a kind of splitting bar memory cell structure.Drain 21 in the described splitting bar structure, source electrode 22 divisions, grid 23 has to the sagging structure of drain electrode 21 sides, this sagging part is as selecting grid 25.The potential state of this splitting bar memory cell and floating boom 24 is irrelevant, if select grid 25 not selected, and then no current conversion in this memory cell.Other prior aries for example also provide a kind of have the splitting bar structure and non-flash memory among the U.S. Patent Application Publication US20070237005A1.
In the flash technology of present a kind of grid structure of creating dissensions, between the grid structure of division, promptly the oxide layer on common source region (common source area) surface generally adopts the method preparation of boiler tube wet-oxygen oxidation.But find that when measurement subsequently the formed thickness of oxide layer of boiler tube wet-oxygen oxidation can not satisfy technological requirement much larger than design thickness.For addressing this problem, also attempt adopting the method for boiler tube dry-oxygen oxidation, though formed thickness of oxide layer descends to some extent,, still can not satisfy technological requirement still much larger than design thickness.
In addition, described oxide layer has produced more serious smile effect in that the thickness near the position of public source district center is also big more more, also will have a negative impact to the side wall of the grid structure of established division.
Summary of the invention
The present invention solves the oxidated layer thickness that prior art forms between splitting bar blocked up, can not satisfy technological requirement, and the more serious problem of smile effect.
For addressing the above problem, the invention provides the manufacture method of oxide layer between a kind of splitting bar, comprise: use Rapid Thermal processing procedure (RTP, Rapid Thermal Process) equipment carries out original position steam generation (ISSG, In-Situ Steam Generation), form oxide layer with the surface of the common source region between splitting bar.
Compared with prior art, the manufacture method of oxide layer has the following advantages between above-mentioned splitting bar: the method that original position steam generates is the Rapid Thermal processing procedure of low pressure, it is because processing procedure time weak point, thereby can accurately be controlled at the thickness of oxide layer that highly doped common source region surface forms, avoid oxide layer blocked up, more can satisfy technological requirement.
And the formed oxidated layer thickness of method that original position steam generates is more even, has improved smile effect.
Description of drawings
Fig. 1 is the easy structure schematic diagram of memory cell in a kind of flash memory of prior art;
Fig. 2 is the easy structure schematic diagram that prior art a kind of has memory cell in the flash memory of splitting bar structure;
Fig. 3 a is that the present invention adopts the method for furnace oxidation to carry out the schematic diagram of Dual Gate Oxide engineer testing;
Fig. 3 b is that the present invention adopts the method for furnace oxidation, original position steam generation combination to carry out the schematic diagram of Dual Gate Oxide engineer testing;
Fig. 4 is the manufacture method of oxide layer between application splitting bar of the present invention forms oxide layer on the substrate that is formed with common source region a part process implementing example flow chart.
Embodiment
By the method that forms oxide layer between splitting bar in the aforementioned prior art is discovered that further described oxide layer is formed at the common source region surface.Because normally carrying out high concentration ion to silicon substrate, common source region injects the highly doped zone that forms, foreign atom in the highly doped zone has destroyed the orderly compact texture of silicon, make subsequent oxidation when reaction oxygen atom is easier and in silicon substrate, spreads, react with lower floor silicon.And, the furnace oxidation that oxide layer adopted of after this growing, its growth oxide layer chronic, so oxygen atom has time enough to see through highly doped common source region to spread downwards, forms silica with pasc reaction.For the certain thickness oxide layer of growth, the parameter of corresponding furnace oxidation is based on that oxidability on the silicon chip of non-doping sets, therefore analyze for these reasons, the thickness of oxide layer that furnace oxidation forms in highly doped zone will be much larger than design thickness.
For this reason, the manufacture method of oxide layer adopts a kind of Rapid Thermal processing procedure in described ion implanted region territory growth oxide layer between splitting bar of the present invention.According to one embodiment of the present invention, it comprises: use Rapid Thermal processing procedure (RTP, Rapid Thermal Process) equipment carries out original position steam generation (ISSG, In-Situ Steam Generation), forms oxide layer with the surface of the common source region between splitting bar.
The method that original position steam generates is by the superheated vapor atmosphere oxide layer of growing, and the speed of its growth oxide layer is very fast.And Rapid Thermal process apparatus warming and cooling rate is fast, the Rapid Thermal process apparatus is the single-wafer process equipment simultaneously, be generally the situation of tens wafer with respect to furnace oxidation, the gas source that the wafer in the Rapid Thermal process apparatus touches is more abundant, makes that also the speed of growth of oxide layer is very fast.Therefore, it is shorter to use the Rapid Thermal process apparatus to carry out processing procedure time of original position steam growth.Though highly doped common source region makes oxygen atom easier of its diffusion, because the processing procedure time is shorter, oxygen atom does not have time enough and pasc reaction forms silica.Correspondingly, the oxidation reaction speed of doped region and non-doped region just is more or less the same.Therefore, the method that generates by described original position steam can accurately be controlled the thickness of highly doped common source region oxide layer growth.
In addition, the method that original position steam generates is the low pressure processing procedure, and the thickness of oxide layer of its growth is also more even, thereby has improved smile effect.
Fig. 3 a carries out the schematic diagram of grid oxygen engineer testing for using furnace oxidation (unadulterated silicon chip) on empty sheet.Fig. 3 b is that furnace oxidation, the generation of original position steam are combined in the schematic diagram that carries out grid oxygen engineer testing on the sky sheet.Be in the following grid oxygen engineer testing and form thick grating oxide layer earlier, form thin gate oxide again.
Shown in Fig. 3 a, adopt the method for furnace oxidation on empty sheet, to form thick grating oxide layer 100 earlier, for example forming thickness is 60
Gate oxide.Then, continue to adopt the method for furnace oxidation to form thin gate oxide 102 on empty sheet, for example forming thickness is 32
Gate oxide.Can find that thick grating oxide layer 100 surfaces also formed gate oxide 101 when measuring for thick grating oxide layer 100 this moment, and therefore, the actual (real) thickness of thick grating oxide layer is from original 60
Be increased to 73
Shown in Fig. 3 b, adopt the method for furnace oxidation on empty sheet, to form thick grating oxide layer 200 earlier, for example forming thickness is 60
Gate oxide.Then, the method that adopts original position steam to generate forms thin gate oxide 202 on empty sheet, and for example forming thickness is 32
Gate oxide.Can find that the thickness of thick grating oxide layer 200 substantially do not become when measuring for thick grating oxide layer 200 this moment.
Above two comparison of test results can be seen original position steam generates technology and not only can be used for the thin oxide layer of highly doped zone generation, and it can not increase established thickness of oxide layer (no matter whether mixing).Therefore, the method that adopts original position steam to generate is more favourable for the thickness of controlled oxidation layer.
Fig. 4 forms the part process implementing example flow chart of oxide layer on the substrate that is formed with common source region for the manufacture method of using oxide layer between splitting bar of the present invention.With reference to shown in Figure 4, described technology comprises:
Step s10 adopts rapid thermal oxidation (RTO) and high-temperature thermal oxidation (HTO) to form tunneling oxide layer on the common source region surface successively;
Step s20 adopts original position steam to be created on the formation of tunneling oxide layer surface and wears gate oxide then.
In the above-mentioned technology, because aforementioned empty sheet test confirms that original position steam generates can't increase established thickness of oxide layer.Thereby after formation was worn gate oxide then, the thickness of established tunneling oxide layer can not increase yet.Therefore, form the situation of wearing gate oxide then with respect to the method that adopts furnace oxidation, the method that adopts original position steam to generate forms wears gate oxide then, can be so that the thickness of oxide layer between splitting bar is thinner.And the thickness of wearing gate oxide owing to the generation of original position steam is formed then is more even, has also improved smile effect.
Only for illustrating, in the present embodiment, the temperature that original position steam generates is 950 ℃～1200 ℃, and pressure is 0.1Torr～20Torr (1Torr=0.13332237kPa).Hydrogen (the H that can add in addition, the certain volume ratio in the implementation process that above-mentioned original position steam generates
2), for example 0.1%～99%.Confirm that through follow-up test the ratio of hydrogen is to formed almost not influence of thickness of wearing gate oxide then.For example, add 5% and 33% hydrogen in position in the implementation process that steam generates respectively, carry out technology shown in Figure 4, the thickness of oxide layer basically identical between the final splitting bar that forms.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (6)
1. the manufacture method of oxide layer between a splitting bar is characterized in that, comprising: use the Rapid Thermal process apparatus to carry out original position steam and generate, form oxide layer with the surface of the common source region between splitting bar.
2. the manufacture method of oxide layer is characterized in that between splitting bar as claimed in claim 1, and described original position steam generates formed oxide layer for wearing gate oxide then.
3. the manufacture method of oxide layer is characterized in that between splitting bar as claimed in claim 1, and the temperature that described original position steam generates is 950 ℃～1200 ℃.
4. the manufacture method of oxide layer is characterized in that between splitting bar as claimed in claim 1, and the pressure that described original position steam generates is 0.1Torr～20Torr.
5. the manufacture method of oxide layer is characterized in that between splitting bar as claimed in claim 2, described wearing then on the tunneling oxide layer that gate oxide is formed at the public source region surface between splitting bar.
6. the manufacture method of oxide layer is characterized in that between splitting bar as claimed in claim 5, and described tunneling oxide layer forms by the method that adopts rapid thermal oxidation, high-temperature thermal oxidation successively.
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| CN2009101962050A CN102024692A (en) | 2009-09-23 | 2009-09-23 | Manufacturing method of oxide layer between splitting grids |
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| CN2009101962050A CN102024692A (en) | 2009-09-23 | 2009-09-23 | Manufacturing method of oxide layer between splitting grids |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943625A (en) * | 2014-03-24 | 2014-07-23 | 上海华力微电子有限公司 | NAND flash device and manufacturing method thereof |
| CN105428277A (en) * | 2015-11-11 | 2016-03-23 | 武汉新芯集成电路制造有限公司 | Method for improving wafer yield in flash memory product manufacturing |
| CN114999907A (en) * | 2022-08-08 | 2022-09-02 | 合肥新晶集成电路有限公司 | Manufacturing method of grid oxide layer and manufacturing method of field effect transistor |
-
2009
- 2009-09-23 CN CN2009101962050A patent/CN102024692A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943625A (en) * | 2014-03-24 | 2014-07-23 | 上海华力微电子有限公司 | NAND flash device and manufacturing method thereof |
| CN103943625B (en) * | 2014-03-24 | 2016-08-31 | 上海华力微电子有限公司 | A kind of NAND flash memory device and manufacture method thereof |
| CN105428277A (en) * | 2015-11-11 | 2016-03-23 | 武汉新芯集成电路制造有限公司 | Method for improving wafer yield in flash memory product manufacturing |
| CN114999907A (en) * | 2022-08-08 | 2022-09-02 | 合肥新晶集成电路有限公司 | Manufacturing method of grid oxide layer and manufacturing method of field effect transistor |
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Effective date of registration: 20121112 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20110420 |