CN102024415B - shift register circuit - Google Patents
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- CN102024415B CN102024415B CN 201110005178 CN201110005178A CN102024415B CN 102024415 B CN102024415 B CN 102024415B CN 201110005178 CN201110005178 CN 201110005178 CN 201110005178 A CN201110005178 A CN 201110005178A CN 102024415 B CN102024415 B CN 102024415B
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Abstract
A shift register circuit includes a plurality of stages of shift registers to provide a plurality of gate signals, each stage of shift register including an input unit, a pull-up unit, and a pull-down unit. The input unit is used for outputting a driving control voltage according to a first input signal. The pull-up unit pulls up the gate signal of the corresponding gate line according to the driving control voltage and the system clock. The pull-down unit is provided with a pull-down transistor and a one-way conduction element. The pull-down transistor pulls down the gate signal to a power supply voltage of the power supply terminal according to the second input signal. The one-way conduction element is used for inhibiting the leakage current flowing from the power supply end to the corresponding gate line through the pull-down transistor.
Description
Technical field
The invention relates to a kind of shift-register circuit, refer to a kind of shift-register circuit of tool low power consumption especially.
Background technology
Liquid crystal indicator (Liquid Crystal Display; LCD) be present widely used a kind of flat-panel screens, it has, and external form is frivolous, power saving and advantage such as radiationless.The principle of work of liquid crystal indicator is the ordered state that the voltage difference that utilize to change the liquid crystal layer two ends changes the liquid crystal molecule in the liquid crystal layer, in order to change the light transmission of liquid crystal layer, to cooperate backlight module again the light source that provided with show image.Generally speaking, liquid crystal indicator comprises a plurality of pixel cells, source electrode driver and shift-register circuit.Source electrode driver is used to provide a plurality of data-signals to a plurality of pixel cells.Shift-register circuit comprises multi-stage shift register to produce a plurality of pixel cells of a plurality of signal feed-ins, controls the running that writes of a plurality of data-signals according to this.Therefore, shift-register circuit is the key element of control data signal write operation.
Fig. 1 is the synoptic diagram of known shift-register circuit.As shown in Figure 1, shift-register circuit 100 comprises multi-stage shift register, wherein only shows (N-1) level shift register 111 and N level shift register 112.Each grade shift register comprises input block 120, pull-up unit 130,140, the second drop-down unit 150, energy-storage units 135, the first drop-down unit, reaches drop-down control module 160.The first drop-down unit 140 has the first transistor 141 and transistor seconds 142, is used for drop-down corresponding signal SG and corresponding drive control voltage VQ respectively.In order to promote the operational effectiveness of displacement liquid crystal indicator, the low level voltage of the first clock CK1 and second clock CK2 can be made as the voltage that is lower than supply voltage Vss, yet when signal SG is low level voltage, can make the first transistor 141 that leakage current takes place, thereby cause high power consumption.If reduce manufacturing cost shift-register circuit 100 is integrated on the display panel that comprises pel array, that is based on GOA (Gate-driver 0n Array) framework, then above-mentioned high power consumption can make the panel temperature of display panel rise, so not only can reduce display quality, also can reduce panel serviceable life.
Summary of the invention
According to embodiments of the invention, disclose a kind of shift-register circuit, in order to a plurality of signals bar gate line at the most to be provided.This kind shift-register circuit comprises multi-stage shift register, and the N level shift register of this multi-stage shift register comprises input block, pull-up unit, energy-storage units, the first drop-down unit and the second drop-down unit.
Input block is used for according to first input signal with the output drive control voltage.The pull-up unit that is electrically connected on input block and N gate line is used for drawing the N signal according to drive control voltage and more than the system clock, and wherein the N gate line is in order to transmit the N signal.The energy-storage units that is electrically connected on pull-up unit and input block is used for carrying out charging procedure or discharge procedures according to drive control voltage.The first drop-down unit that is electrically connected on the N gate line is used for according to second input signal with drop-down N signal.The first drop-down unit comprises the first transistor and the first unidirectional breakover element.The first transistor comprises first end, second end and gate terminal, and wherein first end is electrically connected on the N gate line, and gate terminal is used for receiving second input signal.The first unidirectional breakover element comprises anode and negative electrode, and wherein anode is electrically connected on second end of the first transistor, and cathodic electricity is connected in power end.The first unidirectional breakover element is used for suppressing to be flowed to through the first transistor by power end the leakage current of N gate line.The second drop-down unit that is electrically connected on input block is used for according to second input signal with drop-down drive control voltage.
According to embodiments of the invention, also disclose a kind of shift-register circuit, in order to a plurality of signals bar gate line at the most to be provided.This kind shift-register circuit comprises multi-stage shift register, and the N level shift register of this multi-stage shift register comprises input block, pull-up unit, energy-storage units, the first drop-down unit and the second drop-down unit.
Input block is used for according to first input signal with the output drive control voltage.The pull-up unit that is electrically connected on input block and N gate line is used for drawing the N signal according to drive control voltage and more than the system clock, and wherein the N gate line is in order to transmit the N signal.The energy-storage units that is electrically connected on pull-up unit and input block is used for carrying out charging procedure or discharge procedures according to drive control voltage.The first drop-down unit that is electrically connected on the N gate line is used for according to second input signal with drop-down N signal.The first drop-down unit comprises the first transistor and the first unidirectional breakover element.The first transistor comprises first end, second end and gate terminal, and wherein gate terminal is used for receiving second input signal, and second end is electrically connected on power end.The first unidirectional breakover element comprises anode and negative electrode, and wherein anode is electrically connected on the N gate line, and cathodic electricity is connected in first end of the first transistor.The first unidirectional breakover element is used for suppressing to be flowed to through the first transistor by power end the leakage current of N gate line.The second drop-down unit that is electrically connected on input block is used for according to second input signal with drop-down drive control voltage.
Description of drawings
Fig. 1 is the synoptic diagram of known shift-register circuit.
Fig. 2 is the synoptic diagram of the shift-register circuit of first embodiment of the invention.
Fig. 3 is the synoptic diagram of the shift-register circuit of second embodiment of the invention.
Fig. 4 is the synoptic diagram of the shift-register circuit of third embodiment of the invention.
Fig. 5 is the synoptic diagram of the shift-register circuit of fourth embodiment of the invention.
[main element label declaration]
200,300,400,500 shift-register circuits
211,311,411,511 (N-1) level shift register
212,312,412,512 N level shift registers
213,313,413,513 (N+1) level shift register
310 input blocks
311 the 7th transistors
320 pull-up units
321 the 6th transistors
330 energy-storage units
331 electric capacity
340,440 first drop-down unit
341,441 the first transistors
342,442 first unidirectional breakover elements
343,443 transistor secondses
350 second drop-down unit
351 the 5th transistors
360,460,560,660 the 3rd drop-down unit
361,461,561,661 the 3rd transistors
362,462,562,662 second unidirectional breakover elements
363,463,563,663 the 4th transistors
370 drop-down control modules
390 power ends
CK1 first system clock
CK2 second system clock
GLn-1, GLn, GLn+1 gate line
The SCn control signal
SGn-2, SGn-1, SGn, SGn+1, SGn+2 signal
The VQn drive control voltage
The Vss supply voltage
Embodiment
Hereinafter, cooperate appended graphic elaborating, but the embodiment that is provided not is the scope that contains in order to restriction the present invention especially exemplified by embodiment according to shift-register circuit of the present invention.
Fig. 2 is the synoptic diagram of the shift-register circuit of first embodiment of the invention.As shown in Figure 2, shift-register circuit 200 comprises multi-stage shift register, for convenience of description, 200 of shift-register circuits show (N-1) level shift register 211, N level shift register 212 and (N+1) level shift register 213, wherein have only (N-1) level shift register 211 and N level shift register 212 to show the built-in function unit structure, all the other grades shift register is to be analogous to (N-1) level shift register 211 or N level shift register 212, does not give unnecessary details in addition.In the running of shift-register circuit 200, N level shift register 212 is used for producing signal SGn according to signal SGn-1 and the first system clock CK1 with the running of carrying out the tool low power consumption and is fed into gate lines G Ln, (N-1) level shift register 211 is used for producing signal SGn-1 according to signal SGn-2 and the anti-phase second system clock CK2 in the first system clock CK1 with the running of carrying out the tool low power consumption and is fed into gate lines G Ln-1, and all the other grades shift register can in like manner be analogized.Hereinafter according to coupled relation and the circuit operation principles of N level shift register 212 so that each element to be described.
N level shift register 212 comprises input block 310, pull-up unit 320,340, the second drop-down unit, energy-storage units 330, the first drop-down unit the 350, the 3rd drop-down unit 360 and drop-down control module 370.The input block 310 that is electrically connected on (N-1) level shift register 211 is used for according to signal SGn-1 with output drive control voltage VQn.The pull-up unit 320 that is electrically connected on input block 310 and gate lines G Ln is used for drawing signal SGn according to drive control voltage VQn and more than the first system clock CK1, and wherein gate lines G Ln is in order to transmission signal SGn.The energy-storage units 330 that is electrically connected on pull-up unit 320 and input block 310 is used for carrying out charging procedure or discharge procedures according to drive control voltage VQn.The first drop-down unit 340 is electrically connected on gate lines G Ln and power end 390, and is electrically connected on (N+1) level shift register 213 to receive signal SGn+1.The first drop-down unit 340 is used for according to signal SGn+1 signal SGn being pulled down to supply voltage Vss.
The second drop-down unit 350 is electrically connected on input block 310 and power end 390, and is electrically connected on (N+1) level shift register 213 to receive signal SGn+1.The second drop-down unit 350 is used for according to signal SGn+1 drive control voltage VQn being pulled down to supply voltage Vss.The drop-down control module 370 that is electrically connected on input block 310 is used for according to drive control voltage VQn to produce control signal SCn.The 3rd drop-down unit 360 that is electrically connected on drop-down control module 370, power end 390 and gate lines G Ln is used for according to control signal SCn signal SGn being pulled down to supply voltage Vss.
In the embodiment of Fig. 2, the first drop-down unit 340 comprises the first transistor 341 and the first unidirectional breakover element 342, the 3rd drop-down unit 360 comprises the 3rd transistor 361 and the second unidirectional breakover element 362, the second drop-down unit 350 comprises the 5th transistor 351, pull-up unit 320 comprises the 6th transistor 321, input block 310 comprises the 7th transistor 311, and energy-storage units 330 comprises electric capacity 331.The first unidirectional breakover element 342 is used for suppressing flowing to the leakage current of gate lines G Ln by power end 390 through the first transistor 341, and the second unidirectional breakover element 362 is used for suppressing to be flowed to through the 3rd transistor 361 by power end 390 leakage current of gate lines G Ln.In one embodiment, the first unidirectional breakover element 342 comprises and is used for the fill order to the transistor seconds 343 of conducting running, and the second unidirectional breakover element 362 comprises and is used for four transistor 363 of fill order to the conducting running.Each transistor that note that above-mentioned or the following stated can be thin film transistor (TFT) (Thin Film Transistor) or field effect transistor (Field EffectTransistor).
The first transistor 341 comprises first end, second end and gate terminal, and wherein first end is electrically connected on gate lines G Ln, and gate terminal is electrically connected on (N+1) level shift register 213 to receive signal SGn+1.The first unidirectional breakover element 342 comprises anode and negative electrode, and wherein anode is electrically connected on second end of the first transistor 341, and cathodic electricity is connected in power end 390 to receive supply voltage Vss.Have among the embodiment of transistor seconds 343 at the first unidirectional breakover element 342, first end of transistor seconds 343 and gate terminal are electrically connected on second end of the first transistor 341, and second end of transistor seconds 343 is electrically connected on power end 390.
The 3rd transistor 361 comprises first end, second end and gate terminal, and wherein first end is electrically connected on gate lines G Ln, and gate terminal is electrically connected on drop-down control module 370 to receive control signal SCn.The second unidirectional breakover element 362 comprises anode and negative electrode, and wherein anode is electrically connected on second end of the 3rd transistor 361, and cathodic electricity is connected in power end 390 to receive supply voltage Vss.Have among the embodiment of the 4th transistor 363 at the second unidirectional breakover element 362, first end of the 4th transistor 363 and gate terminal are electrically connected on second end of the 3rd transistor 361, and second end of the 4th transistor 363 is electrically connected on power end 390.
The 7th transistor 311 comprises first end, second end and gate terminal, and wherein first end and gate terminal are electrically connected on (N-1) level shift register 211 to receive signal SGn, and second end is used for exporting drive control voltage VQn.The 6th transistor 321 comprises first end, second end and gate terminal, and wherein first end is used for receiving the first system clock CK1, and gate terminal is electrically connected on second end of the 7th transistor 311 to receive drive control voltage VQn, and second end is electrically connected on gate lines G Ln.Electric capacity 331 is electrically connected between the gate terminal and second end of the 6th transistor 321.The 5th transistor 351 comprises first end, second end and gate terminal, wherein first end is electrically connected on second end of the 7th transistor 311, gate terminal is electrically connected on (N+1) level shift register 213 to receive signal SGn+1, and second end is electrically connected on power end 390.
From the above, in the running of shift-register circuit 200, even the low level voltage of signal SGn is lower than supply voltage Vss, the first drop-down unit 340 and the 3rd drop-down unit 360 can be respectively drain current suppressing by the first unidirectional breakover element 342 and the second unidirectional breakover element 362 be used for reducing power consumption, thereby reduce panel temperature to improve display quality and to prolong panel serviceable life.
Fig. 3 is the synoptic diagram of the shift-register circuit of second embodiment of the invention.As shown in Figure 3, shift-register circuit 300 comprises multi-stage shift register, for convenience of description, 300 of shift-register circuits show (N-1) level shift register 311, N level shift register 312 and (N+1) level shift register 313, wherein have only (N-1) level shift register 311 and N level shift register 312 to show the built-in function unit structure, all the other grades shift register is to be analogous to (N-1) level shift register 311 or N level shift register 312, does not give unnecessary details in addition.(N-1) level shift register 311 and N level shift register 312 are similar to (N-1) level shift register 211 and N level shift register 212 shown in Figure 2 respectively, main difference is the first drop-down unit 340 is replaced into the first drop-down unit 440, and the 3rd drop-down unit 360 is replaced into the 3rd drop-down unit 460.
In the embodiments of figure 3, the first drop-down unit 440 comprises the first transistor 441 and the first unidirectional breakover element, 442, the three drop-down unit 460 comprise the 3rd transistor 461 and the second unidirectional breakover element 462.The first unidirectional breakover element 442 is used for suppressing flowing to the leakage current of gate lines G Ln by power end 390 through the first transistor 441, and the second unidirectional breakover element 462 is used for suppressing to be flowed to through the 3rd transistor 461 by power end 390 leakage current of gate lines G Ln.In one embodiment, the first unidirectional breakover element 442 comprises and is used for the fill order to the transistor seconds 443 of conducting running, and the second unidirectional breakover element 462 comprises and is used for four transistor 463 of fill order to the conducting running.
The first transistor 441 comprises first end, second end and gate terminal, and wherein gate terminal is electrically connected on (N+1) level shift register 313 to receive signal SGn+1, and second end is electrically connected on power end 390 to receive supply voltage Vss.The first unidirectional breakover element 442 comprises anode and negative electrode, and wherein anode is electrically connected on gate lines G Ln, and cathodic electricity is connected in first end of the first transistor 441.Have among the embodiment of transistor seconds 443 at the first unidirectional breakover element 442, first end and the gate terminal of transistor seconds 443 are electrically connected on gate lines G Ln, and second end of transistor seconds 443 is electrically connected on first end of the first transistor 441.
The 3rd transistor 461 comprises first end, second end and gate terminal, and wherein gate terminal is electrically connected on drop-down control module 370 to receive control signal SCn, and second end is electrically connected on power end 390 to receive supply voltage Vs s.The second unidirectional breakover element 462 comprises anode and negative electrode, and wherein anode is electrically connected on gate lines G Ln, and cathodic electricity is connected in first end of the 3rd transistor 461.Have among the embodiment of the 4th transistor 463 at the second unidirectional breakover element 462, first end and the gate terminal of the 4th transistor 463 are electrically connected on gate lines G Ln, and second end of the 4th transistor 463 is electrically connected on first end of the 3rd transistor 461.
From the above, in the running of shift-register circuit 300, even the low level voltage of signal SGn is lower than supply voltage Vss, the first drop-down unit 440 and the 3rd drop-down unit 460 can be respectively drain current suppressing by the first unidirectional breakover element 442 and the second unidirectional breakover element 462 be used for reducing power consumption, thereby reduce panel temperature to improve display quality and to prolong panel serviceable life.
Fig. 4 is the synoptic diagram of the shift-register circuit of third embodiment of the invention.As shown in Figure 4, shift-register circuit 400 comprises multi-stage shift register, for convenience of description, 400 of shift-register circuits show (N-1) level shift register 411, N level shift register 412 and (N+1) level shift register 413, wherein have only (N-1) level shift register 411 and N level shift register 412 to show the built-in function unit structure, all the other grades shift register is to be analogous to (N-1) level shift register 411 or N level shift register 412, does not give unnecessary details in addition.(N-1) level shift register 411 and N level shift register 412 are to be similar to (N-1) level shift register 311 and N level shift register 312 shown in Figure 3 respectively, and main difference is the 3rd drop-down unit 460 is replaced into the 3rd drop-down unit 560.
In the embodiment of Fig. 4, the 3rd drop-down unit 560 comprises the 3rd transistor 561 and the second unidirectional breakover element 562.In one embodiment, the second unidirectional breakover element 562 comprises and is used for the fill order to the 4th transistor 563 of conducting running, suppresses to be flowed to through the 3rd transistor 561 by power end 390 leakage current of gate lines G Ln according to this.The 3rd transistor 561 comprises first end, second end and gate terminal, and wherein first end is electrically connected on gate lines G Ln, and gate terminal is electrically connected on drop-down control module 370 to receive control signal SCn.The second unidirectional breakover element 562 comprises anode and negative electrode, and wherein anode is electrically connected on second end of the 3rd transistor 561, and cathodic electricity is connected in power end 390 to receive supply voltage Vss.Have among the embodiment of the 4th transistor 563 at the second unidirectional breakover element 562, first end of the 4th transistor 563 and gate terminal are electrically connected on second end of the 3rd transistor 561, and second end of the 4th transistor 563 is electrically connected on power end 390.
From the above, in the running of shift-register circuit 400, even the low level voltage of signal SGn is lower than supply voltage Vss, the first drop-down unit 440 and the 3rd drop-down unit 560 can be respectively drain current suppressing by the first unidirectional breakover element 442 and the second unidirectional breakover element 562 be used for reducing power consumption, thereby reduce panel temperature to improve display quality and to prolong panel serviceable life.
Fig. 5 is the synoptic diagram of the shift-register circuit of fourth embodiment of the invention.As shown in Figure 5, shift-register circuit 500 comprises multi-stage shift register, for convenience of description, 500 of shift-register circuits show (N-1) level shift register 511, N level shift register 512 and (N+1) level shift register 513, wherein have only (N-1) level shift register 511 and N level shift register 512 to show the built-in function unit structure, all the other grades shift register is to be analogous to (N-1) level shift register 511 or N level shift register 512, does not give unnecessary details in addition.(N-1) level shift register 511 and N level shift register 512 are to be similar to (N-1) level shift register 211 and N level shift register 212 shown in Figure 2 respectively, and main difference is the 3rd drop-down unit 360 is replaced into the 3rd drop-down unit 660.
In the embodiment of Fig. 5, the 3rd drop-down unit 660 comprises the 3rd transistor 661 and the second unidirectional breakover element 662.In one embodiment, the second unidirectional breakover element 662 comprises and is used for the fill order to the 4th transistor 663 of conducting running, suppresses to be flowed to through the 3rd transistor 661 by power end 390 leakage current of gate lines G Ln according to this.The 3rd transistor 661 comprises first end, second end and gate terminal, and wherein gate terminal is electrically connected on drop-down control module 370 to receive control signal SCn, and second end is electrically connected on power end 390 to receive supply voltage Vss.The second unidirectional breakover element 662 comprises anode and negative electrode, and wherein anode is electrically connected on gate lines G Ln, and cathodic electricity is connected in first end of the 3rd transistor 661.Have among the embodiment of the 4th transistor 663 at the second unidirectional breakover element 662, first end and the gate terminal of the 4th transistor 663 are electrically connected on gate lines G Ln, and second end of the 4th transistor 663 is electrically connected on first end of the 3rd transistor 661.
From the above, in the running of shift-register circuit 500, even the low level voltage of signal SGn is lower than supply voltage Vss, the first drop-down unit 340 and the 3rd drop-down unit 660 can be respectively drain current suppressing by the first unidirectional breakover element 342 and the second unidirectional breakover element 662 be used for reducing power consumption, thereby reduce panel temperature to improve display quality and to prolong panel serviceable life.
In sum, in the running of shift-register circuit of the present invention, even because of the low level voltage of signal is lower than the leakage current that supply voltage causes drop-down unit, this leakage current can show by the inhibiting effect of unidirectional breakover element and reducing, showing the power consumption that reduces shift-register circuit according to this, thereby reducing panel temperature to improve display quality and to prolong panel serviceable life.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; any have a technical field of the invention know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking appended the claim scope person of defining.
Claims (20)
1. shift-register circuit, in order to a plurality of signals bar gate line at the most to be provided, this shift-register circuit comprises multi-stage shift register, and the N level shift register of this multi-stage shift register comprises:
Input block is used for according to first input signal with the output drive control voltage;
Pull-up unit, be electrically connected on the N gate line of this input block and these many gate lines, this pull-up unit is used for drawing according to this drive control voltage and more than the system clock N signal of these a plurality of signals, and wherein this N gate line is in order to transmit this N signal;
Energy-storage units is electrically connected on this pull-up unit and this input block, and this energy-storage units is used for carrying out charging procedure or discharge procedures according to this drive control voltage;
The first drop-down unit is electrically connected on this N gate line, and this first drop-down unit is used for according to second input signal with drop-down this N signal, and this first drop-down unit comprises:
The first transistor comprises first end, second end and gate terminal, and wherein this first end is electrically connected on this N gate line, and this gate terminal is used for receiving this second input signal; And
The first unidirectional breakover element, comprise anode and negative electrode, wherein this anode is electrically connected on second end of this first transistor, and this cathodic electricity is connected in power end, and this first unidirectional breakover element is used for suppressing to be flowed to through this first transistor by this power end the leakage current of this N gate line; And
The second drop-down unit is electrically connected on this input block, and this second drop-down unit is used for according to this second input signal with drop-down this drive control voltage.
2. shift-register circuit according to claim 1, wherein the gate terminal of this first transistor be electrically connected on this multi-stage shift register (N+1) level shift register to receive (N+1) signal of these a plurality of signals, this first transistor is thin film transistor (TFT) or field effect transistor.
3. shift-register circuit according to claim 1, wherein this first unidirectional breakover element comprises transistor seconds, first end of this transistor seconds and gate terminal are electrically connected on second end of this first transistor, second end of this transistor seconds is electrically connected on this power end, and this transistor seconds is thin film transistor (TFT) or field effect transistor.
4. shift-register circuit according to claim 1, wherein this N level shift register also comprises:
Drop-down control module is electrically connected on this input block, and this drop-down control module is used for producing control signal according to this drive control voltage; And
The 3rd drop-down unit is electrically connected on this drop-down control module and this N gate line, and the 3rd drop-down unit is to be used for according to this control signal with drop-down this N signal.
5. shift-register circuit according to claim 4, wherein the 3rd drop-down unit comprises:
The 3rd transistor comprises first end, second end and gate terminal, and wherein the 3rd transistorized first end is electrically connected on this N gate line, and the 3rd transistorized gate terminal is electrically connected on this drop-down control module to receive this control signal; And
The second unidirectional breakover element, comprise anode and negative electrode, wherein the anode of this second unidirectional breakover element is electrically connected on the 3rd transistorized second end, the cathodic electricity of this second unidirectional breakover element is connected in this power end, and this second unidirectional breakover element is used for suppressing to be flowed to through the 3rd transistor by this power end the leakage current of this N gate line;
Wherein the 3rd transistor is thin film transistor (TFT) or field effect transistor.
6. shift-register circuit according to claim 5, wherein this second unidirectional breakover element comprises the 4th transistor, the 4th transistorized first end and gate terminal are electrically connected on the 3rd transistorized second end, the 4th transistorized second end is electrically connected on this power end, and the 4th transistor is thin film transistor (TFT) or field effect transistor.
7. shift-register circuit according to claim 4, wherein the 3rd drop-down unit comprises:
The 3rd transistor comprises first end, second end and gate terminal, and wherein the 3rd transistorized gate terminal is electrically connected on this drop-down control module to receive this control signal, and the 3rd transistorized second end is electrically connected on this power end; And
The second unidirectional breakover element, comprise anode and negative electrode, wherein the anode of this second unidirectional breakover element is electrically connected on this N gate line, the cathodic electricity of this second unidirectional breakover element is connected in the 3rd transistorized first end, and this second unidirectional breakover element is used for suppressing to be flowed to through the 3rd transistor by this power end the leakage current of this N gate line;
Wherein the 3rd transistor is thin film transistor (TFT) or field effect transistor.
8. shift-register circuit according to claim 7, wherein this second unidirectional breakover element comprises the 4th transistor, the 4th transistorized first end and a gate terminal are electrically connected on this N gate line, the 4th transistorized second end is electrically connected on the 3rd transistorized first end, and the 4th transistor is thin film transistor (TFT) or field effect transistor.
9. shift-register circuit according to claim 1, wherein:
This second drop-down unit comprises the 5th transistor, the 5th transistorized first end is electrically connected on this input block, the 5th transistorized gate terminal is electrically connected on (N+1) level shift register of this multi-stage shift register to receive (N+1) signal of these a plurality of signals, and the 5th transistorized second end is electrically connected on this power end;
This pull-up unit comprises the 6th transistor, and the 6th transistorized first end is used for receiving this system clock, and the 6th transistorized gate terminal is electrically connected on this input block, and the 6th transistorized second end is electrically connected on this N gate line; And
This energy-storage units comprises the electric capacity that is electrically connected between the 6th transistorized gate terminal and second end;
Wherein the 5th transistor AND gate the 6th transistor is thin film transistor (TFT) or field effect transistor.
10. shift-register circuit according to claim 1, wherein this input block comprises the 7th transistor, the 7th transistorized first end and a gate terminal are electrically connected on (N-1) level shift register of this multi-stage shift register to receive (N-1) signal of these a plurality of signals, the 7th transistorized second end is used for exporting this drive control voltage, and the 7th transistor is thin film transistor (TFT) or field effect transistor.
11. a shift-register circuit, in order to a plurality of signals bar gate line at the most to be provided, this shift-register circuit comprises multi-stage shift register, and the N level shift register of this multi-stage shift register comprises:
Input block is used for according to first input signal with the output drive control voltage;
Pull-up unit, be electrically connected on the N gate line of this input block and these many gate lines, this pull-up unit is used for drawing according to this drive control voltage and more than the system clock N signal of these a plurality of signals, and wherein this N gate line is in order to transmit this N signal;
Energy-storage units is electrically connected on this pull-up unit and this input block, and this energy-storage units is used for carrying out charging procedure or discharge procedures according to this drive control voltage;
The first drop-down unit is electrically connected on this N gate line, and this first drop-down unit is used for according to second input signal with drop-down this N signal, and this first drop-down unit comprises:
The first transistor comprises first end, second end and gate terminal, and wherein this gate terminal is used for receiving this second input signal, and this second end is electrically connected on power end; And
The first unidirectional breakover element, comprise anode and negative electrode, wherein this anode is electrically connected on this N gate line, and this cathodic electricity is connected in first end of this first transistor, and this first unidirectional breakover element is used for suppressing to be flowed to through this first transistor by this power end the leakage current of this N gate line; And
The second drop-down unit is electrically connected on this input block, and this second drop-down unit is used for according to this second input signal with drop-down this drive control voltage.
12. shift-register circuit according to claim 11, wherein the gate terminal of this first transistor be electrically connected on this multi-stage shift register (N+1) level shift register to receive (N+1) signal of these a plurality of signals, this first transistor is thin film transistor (TFT) or field effect transistor.
13. shift-register circuit according to claim 11, wherein this first unidirectional breakover element comprises transistor seconds, first end and a gate terminal of this transistor seconds are electrically connected on this N gate line, second end of this transistor seconds is electrically connected on first end of this first transistor, and this transistor seconds is thin film transistor (TFT) or field effect transistor.
14. shift-register circuit according to claim 11, wherein this N level shift register also comprises:
Drop-down control module is electrically connected on this input block, and this drop-down control module is used for producing control signal according to this drive control voltage; And
The 3rd drop-down unit is electrically connected on this drop-down control module and this N gate line, and the 3rd drop-down unit is to be used for according to this control signal with drop-down this N signal.
15. shift-register circuit according to claim 14, wherein the 3rd drop-down unit comprises:
The 3rd transistor comprises first end, second end and gate terminal, and wherein the 3rd transistorized first end is electrically connected on this N gate line, and the 3rd transistorized gate terminal is electrically connected on this drop-down control module to receive this control signal; And
The second unidirectional breakover element, comprise anode and negative electrode, wherein the anode of this second unidirectional breakover element is electrically connected on the 3rd transistorized second end, the cathodic electricity of this second unidirectional breakover element is connected in this power end, and this second unidirectional breakover element is used for suppressing to be flowed to through the 3rd transistor by this power end the leakage current of this N gate line;
Wherein the 3rd transistor is thin film transistor (TFT) or field effect transistor.
16. shift-register circuit according to claim 15, wherein this second unidirectional breakover element comprises the 4th transistor, the 4th transistorized first end and a gate terminal are electrically connected on the 3rd transistorized second end, the 4th transistorized second end is electrically connected on this power end, and the 4th transistor is thin film transistor (TFT) or field effect transistor.
17. shift-register circuit according to claim 14, wherein the 3rd drop-down unit comprises:
The 3rd transistor comprises first end, second end and a gate terminal, and wherein the 3rd transistorized gate terminal is electrically connected on this drop-down control module to receive this control signal, and the 3rd transistorized second end is electrically connected on this power end; And
The second unidirectional breakover element, comprise anode and negative electrode, wherein the anode of this second unidirectional breakover element is electrically connected on this N gate line, the cathodic electricity of this second unidirectional breakover element is connected in the 3rd transistorized first end, and this second unidirectional breakover element is used for suppressing to be flowed to through the 3rd transistor by this power end the leakage current of this N gate line;
Wherein the 3rd transistor is thin film transistor (TFT) or field effect transistor.
18. shift-register circuit according to claim 17, wherein this second unidirectional breakover element comprises the 4th transistor, the 4th transistorized first end and a gate terminal are electrically connected on this N gate line, the 4th transistorized second end is electrically connected on the 3rd transistorized first end, and the 4th transistor is thin film transistor (TFT) or field effect transistor.
19. shift-register circuit according to claim 11, wherein:
This second drop-down unit comprises the 5th transistor, the 5th transistorized first end is electrically connected on this input block, the 5th transistorized gate terminal is electrically connected on (N+1) level shift register of this multi-stage shift register to receive (N+1) signal of these a plurality of signals, and the 5th transistorized second end is electrically connected on this power end; And
This pull-up unit comprises the 6th transistor, and the 6th transistorized first end is used for receiving this system clock, and the 6th transistorized gate terminal is electrically connected on this input block, and the 6th transistorized second end is electrically connected on this N gate line;
This energy-storage units comprises the electric capacity that is electrically connected between the 6th transistorized gate terminal and second end;
Wherein the 5th transistor AND gate the 6th transistor is thin film transistor (TFT) or field effect transistor.
20. shift-register circuit according to claim 11, wherein this input block comprises the 7th transistor, the 7th transistorized first end and a gate terminal are electrically connected on (N-1) level shift register of this multi-stage shift register to receive (N-1) signal of these a plurality of signals, the 7th transistorized second end is used for exporting this drive control voltage, and the 7th transistor is thin film transistor (TFT) or field effect transistor.
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| TW099143267 | 2010-12-10 | ||
| TW99143267A TWI411232B (en) | 2010-12-10 | 2010-12-10 | Shift register circuit |
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| CN102024415B true CN102024415B (en) | 2013-07-31 |
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| TWI427591B (en) * | 2011-06-29 | 2014-02-21 | Au Optronics Corp | Gate driving circuit |
| TWI527044B (en) * | 2014-05-05 | 2016-03-21 | 友達光電股份有限公司 | Shift register |
| CN105118459B (en) * | 2015-09-17 | 2017-09-26 | 深圳市华星光电技术有限公司 | A kind of GOA circuits and liquid crystal display |
| CN105489156B (en) | 2016-01-29 | 2019-01-25 | 京东方科技集团股份有限公司 | Shifting deposit unit and driving method, gate driving circuit and display device |
| CN106652964B (en) | 2017-03-10 | 2019-11-05 | 京东方科技集团股份有限公司 | Shift register cell and its driving method, gate driving circuit, display device |
| CN106951123B (en) | 2017-03-21 | 2019-08-20 | 京东方科技集团股份有限公司 | Touch-control driving unit and its driving method, touch drive circuit, display device |
| CN107146584B (en) * | 2017-05-05 | 2019-10-11 | 惠科股份有限公司 | Shift register circuit, waveform generation method thereof and display panel applying same |
| CN109410886A (en) * | 2018-12-27 | 2019-03-01 | 深圳市华星光电半导体显示技术有限公司 | GOA circuit |
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| CN101752006A (en) * | 2009-12-25 | 2010-06-23 | 友达光电股份有限公司 | Shift register |
| CN101853705A (en) * | 2010-05-27 | 2010-10-06 | 友达光电股份有限公司 | Shift register circuit |
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| KR100242244B1 (en) * | 1997-08-09 | 2000-02-01 | 구본준 | Scanning circuit |
| JP3774678B2 (en) * | 2002-05-10 | 2006-05-17 | アルプス電気株式会社 | Shift register device and display device |
| JP4339103B2 (en) * | 2002-12-25 | 2009-10-07 | 株式会社半導体エネルギー研究所 | Semiconductor device and display device |
| TWI229341B (en) * | 2003-08-13 | 2005-03-11 | Toppoly Optoelectronics Corp | Shift register circuit and a signal-triggered circuit for low temperature poly silicon (LTPS) liquid crystal display |
| JP4189585B2 (en) * | 2003-09-17 | 2008-12-03 | カシオ計算機株式会社 | Shift register circuit and electronic device |
| TW201015510A (en) * | 2008-10-06 | 2010-04-16 | Chi Mei Optoelectronics Corp | Shift register circuit and display module |
| CN101533623A (en) * | 2009-02-26 | 2009-09-16 | 深圳华映显示科技有限公司 | Gate drive for inhibiting drift of a critical voltage |
| CN101763900A (en) * | 2010-01-18 | 2010-06-30 | 友达光电股份有限公司 | Shift register circuit |
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| CN101752006A (en) * | 2009-12-25 | 2010-06-23 | 友达光电股份有限公司 | Shift register |
| CN101853705A (en) * | 2010-05-27 | 2010-10-06 | 友达光电股份有限公司 | Shift register circuit |
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| TW201225533A (en) | 2012-06-16 |
| CN102024415A (en) | 2011-04-20 |
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