CN102019114B - Nanoscale filter material structure for respiration and manufacturing method thereof - Google Patents
Nanoscale filter material structure for respiration and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a nanoscale filter material structure for respiration and a manufacturing method thereof. The nanoscale filter material structure is manufactured by semiconductor manufacturing technology, and comprises a top gate, a bottom gate, a plurality of sidewall gates and a plurality of support bodies, wherein a plurality of layers of filter fences are formed in the sidewall gates and are accurately controlled to be nanoscale by the semiconductor manufacturing technology. Therefore, the nanoscale filter fences can be easily and rapidly manufactured, and the design of multiply laminated filter fences further can improve the aperture opening ratio of the filter material to ensure that a user can easily inhale and exhale through the filter material.
Description
Technical field
The present invention relates to a kind of filter medium structure and manufacturing approach thereof, particularly a kind of nanoscale filter medium structure and manufacturing approach thereof that when breathing, is used for filtered air.
Background technology
Along with the prosperity of industry and commerce, densely populated city increases day by day, and the air pollution that human activity caused also worsens day by day.And the air pollution that the loss of a large amount of uses of the toxic emission of steam turbine car, fossil fuel and various harmfulness air pollutants in recent years etc. is produced especially to the personnel in the air-polluting indoor and outdoor surroundings, causes the harm on the health for a long time.Therefore, the importance of air quality more receives popular care and attention.
On the other hand, virus, bacterium and the toxic dust that directly influences health receives popular care and attention especially, and people utilize filtering material to completely cut off virus and bacterium, makes it can not get into the respiratory system of human body and causes infection.The filtering material that uses at present is the screen pack that adopts the fiber storehouse to form mostly; As: with polypropylene (Polypropylene; Be called for short PP) be the multiple filtration net that base material is processed, this kind filters stratum reticulare and is applied on the filter member of mouth mask, face shield, filtration nose pad (nose filter) or respirator.
To be applied to the aspect of mouth mask; Mouth mask generally can be divided into anti-dust respirator, the activated carbon mouth mask reaches via American National employment security and health association (National Institute for OccupationalSafety and Health, NIOSH) the medical grade mouth mask-N95 mouth mask of approval.Its fibrous structure of the mouth mask of N95 specification very closely can intercept 95% the particulate of size more than 0.3 micron (μ m), so the protection effect that mouth mask brought of N95 specification is superior to anti-dust respirator and activated carbon mouth mask.
Yet shown in table one, for general bacterium, it is above and intercepted by the N95 mouth mask easily that its diameter is all 0.3 micron (μ m); But for virus; Its diameter system is the micron grade of nano-scale much smaller than bacterium; Like SARS (Severe Acute RespiratorySyndrome; SARS) viral diameter is merely 100-120 nanometer (nm), and at this moment, the N95 mouth mask promptly can't intercept passing through of virus effectively.
Table one
Therefore, utilize the produced filter medium structure of known fiber stacking only can reach the protection effect of micron grade, for the protection of the virus of nano-scale nearly unavailable fruit then.
Relatively, because filter material makes restriction to transmissible particle size, therefore, just can cause uncomfortable respiratory pressure to the user more along with the becoming more meticulous of filter medium structure.That is if the aperture opening ratio of filter material is more little, ventilative degree is just poor more, and the user will be difficult to carry out across filter material normal air-breathing or venting one's pent-up feelings.
Summary of the invention
Because the shortcoming of known filter material, a purpose of the present invention is to propose a kind of nanoscale filter medium structure and manufacturing approach thereof of breathing usefulness, with effective filtration virus, bacterium and toxic dust.
Another object of the present invention is to propose a kind of nanoscale filter medium structure and manufacturing approach thereof of breathing usefulness, in order to the raising of aperture opening ratio.
A purpose more of the present invention is to propose a kind of nanoscale filter medium structure and manufacturing approach thereof, to increase the service life of filter medium structure.
For reaching above-mentioned purpose and other purpose, the present invention proposes a kind of nanoscale filter medium structure of breathing usefulness, and it comprises: a top gate has a plurality of open tops; One end gate is parallel to this top gate and has a plurality of bottom openings, and those bottom openings and those open tops are staggered mutually; A plurality of sidewall locks; Between this top gate and this end gate and adjacent to an open top and a bottom opening, each sidewall lock has a plurality of filtration fence (filterable gratings) that are parallel to this top gate and this end gate and forms a plurality of filtration channels; And a plurality of supporters, between this top gate and this end gate and be positioned at the confluce of two sidewall locks; Wherein, those filtration channels have the channel height below 300 nanometers.
For reaching above-mentioned purpose and other purpose; The present invention proposes a kind of manufacturing approach of breathing the nanoscale filter medium structure of usefulness in first embodiment; This nanoscale filter medium structure comprises a plurality of open tops district, a plurality of bottom openings district, a plurality of sidewall lock district and a plurality of supports tagma; An adjacent open top district, each sidewall lock district and a bottom opening district; Those supporter districts are positioned at the confluce in two sidewall lock districts, and it comprises the following step: (A1) in a substrate, form one of patterning and promote layer; (A2) on this of part promotes this substrate of layer and part, form one first support body layer of patterning, make those bottom opening districts not have this first support body layer; (A3) on this lifting layer in those bottom opening districts, and one first sacrifice layer that on this first support body layer in those open top districts and those sidewall lock districts, forms patterning; (A4) in those sidewall lock districts and those support one second support body layer that tagmas form patternings; (A5) in those open top districts, those bottom opening districts and those sidewall lock districts form one second sacrifice layer of patterning; (A6) on the sacrifice layer of the top layer in those bottom opening districts and those sidewall lock districts, and, those form a top gate layer on supporting the support body layer of top layer in tagmas; (A7) remove this lifting layer and all sacrifice layer; Reach and (A8) remove this substrate; Wherein, aforementioned each sacrifice layer is formed the thickness that is less than or equal to 300 nanometers.Wherein, after step (A5), can more comprise a step (A5-1): repeating step (A4) reaches (A5) in regular turn, with the support body layer of formation plural layer and the sacrifice layer of plural layer.
For reaching above-mentioned purpose and other purpose; The present invention proposes a kind of manufacturing approach of breathing the nanoscale filter medium structure of usefulness in second embodiment; This nanoscale filter medium structure comprises a plurality of open tops district, a plurality of bottom openings district, a plurality of sidewall lock district and a plurality of supports tagma; An adjacent open top district, each sidewall lock district and a bottom opening district; Those supporter districts are positioned at the confluce in two sidewall lock districts, and it comprises the following step: (B1) in a substrate, form one of patterning and promote layer; (B2) on this of part promotes this substrate of layer and part, form one first support body layer of patterning, make those bottom opening districts not have this first support body layer; (B3) in those bottom opening districts, those open top districts and those sidewall lock districts form one first sacrifice layer of patterning; (B4) in those sidewall lock districts and those support one second support body layer that tagmas form patternings; (B5) in those open top districts, those bottom opening districts, those sidewall lock districts and those support the tagma and form one second sacrifice layer; (B6) in those open top districts, those bottom opening districts, those sidewall lock districts and those support the tagma and form one the 3rd support body layer; (B7) in those open top districts, those bottom opening districts, those sidewall lock districts and those support the tagma and form a protective layer; (B8) those are supported the tagma carries out etching and removes the 3rd support body layer at least forming a supporter groove with each; (B9) in those supporter grooves, carry out lateral etch and remove the part sacrifice layer to form a plurality of supporter flank grooves; (B10) in those supporter grooves and those supporter flank grooves, fill to form a plurality of obturators; (B11) those open top districts and those bottom opening districts are carried out etching and remove the 3rd support body layer at least; (B12) in those open top districts, those bottom opening districts, those sidewall lock districts and part those support the first passage sacrifice layer that tagmas form patternings; (B13) in those bottom opening districts, those sidewall lock districts and those support the tagma and form a top gate layer; (B14) remove this lifting layer and all sacrifice layer; Reach and (B15) remove this substrate; Wherein, aforementioned each sacrifice layer is formed the thickness that is less than or equal to 300 nanometers.
Among second embodiment, after step (B6), more can comprise a step (B6-1): repeating step (B5) reaches (B6) in regular turn, with the support body layer of formation plural layer and the sacrifice layer of plural layer.And in step (B6-1), the layer that forms at last can be sacrifice layer.
Among second embodiment, after step (B12), more can comprise: (B12-1) in those sidewall lock districts and those support the first passage support body layer that tagmas form patternings; And (B12-2) repeating step (B12) and (B12-1) in regular turn, with the passage support body layer that forms plural layer and the passage sacrifice layer of plural layer, and make the layer of last formation be the passage sacrifice layer.
In the enforcement aspect of the present invention, the length of side of those open tops and those bottom openings can form the length with micro-meter scale.All can have those sidewall locks around those open tops and those bottom openings.Comprise an obturator in each supporter, and the material of this obturator can be polymer.The end face of this top gate more can comprise the film in order to decomposing organic matter.
Thus, the present invention utilize the manufacture of semiconductor technology make this nanoscale filter medium structure can reach easily nanoscale the filtration fence making and make this nanoscale filter medium structure apace; One of the top gate of micro-meter scale and end gate more can be made micron-sized preliminary filtration to the air-flow that flows into, and can prolong the life-span of filter material.The design of multiple range upon range of filtration fence more can promote the aperture opening ratio of filter material, and it is air-breathing or venting one's pent-up feelings that the user can be carried out across filter material like a cork.
Description of drawings
Fig. 1 is the generalized section of nanofiltration passage of the present invention in an embodiment.
Fig. 2 is the generalized section of nanofiltration passage of the present invention in another embodiment.
Fig. 3 is the schematic perspective view of the nanoscale filter medium structure of the present invention in an embodiment.
Fig. 4 is the schematic perspective view of the nanoscale filter medium structure of the present invention in another embodiment.
Fig. 5 is the vertical view of Fig. 3 and nanoscale filter medium structure shown in Figure 4.
Fig. 6 A, Fig. 7 A, Fig. 8 A, Fig. 9 A, Figure 10 A, and Figure 11 A be nanoscale filter medium structure making flow process profile according to the end gate hatching AA ' of Fig. 5 in first embodiment.
Fig. 6 B, Fig. 7 B, Fig. 8 B, Fig. 9 B, Figure 10 B, and Figure 11 B be nanoscale filter medium structure making flow process profile according to the top gate hatching BB ' of Fig. 5 in first embodiment.
Fig. 6 C, Fig. 7 C, Fig. 8 C, Fig. 9 C, Figure 10 C, and Figure 11 C be nanoscale filter medium structure making flow process profile according to the sidewall lock hatching CC ' of Fig. 5 in first embodiment.
Figure 12 A has the profile of the nanoscale filter medium structure of five filtration channel numbers according to the end gate hatching AA ' of Fig. 5 among first embodiment.
Figure 12 B has the profile of the nanoscale filter medium structure of five filtration channel numbers according to the top gate hatching BB ' of Fig. 5 among first embodiment.
Figure 12 C has the profile of the nanoscale filter medium structure of five filtration channel numbers according to the sidewall lock hatching CC ' of Fig. 5 among first embodiment.
Figure 13 A, Figure 14 A, Figure 15 A, Figure 16 A, Figure 17 A, Figure 18 A, Figure 19 A, Figure 20 A, Figure 21 A, Figure 22 A, Figure 23 A, and Figure 24 A be nanoscale filter medium structure making flow process profile according to the end gate hatching AA ' of Fig. 5 in second embodiment.
Figure 13 B, Figure 14 B, Figure 15 B, Figure 16 B, Figure 17 B, Figure 18 B, Figure 19 B, Figure 20 B, Figure 21 B, Figure 22 B, Figure 23 B, and Figure 24 B be nanoscale filter medium structure making flow process profile according to the top gate hatching BB ' of Fig. 5 in second embodiment.
Figure 13 C, Figure 14 C, Figure 15 C, Figure 16 C, Figure 17 C, Figure 18 C, Figure 19 C, Figure 20 C, Figure 21 C, Figure 22 C, Figure 23 C, and Figure 24 C be nanoscale filter medium structure making flow process profile according to the sidewall lock hatching CC ' of Fig. 5 in second embodiment.
Figure 25 A has the profile of the nanoscale filter medium structure of five filtration channel numbers according to the end gate hatching AA ' of Fig. 5 among second embodiment.
Figure 25 B has the profile of the nanoscale filter medium structure of five filtration channel numbers according to the top gate hatching BB ' of Fig. 5 among second embodiment.
Figure 25 C has the profile of the nanoscale filter medium structure of five filtration channel numbers according to the sidewall lock hatching CC ' of Fig. 5 among second embodiment.
Figure 26 A is a bottom opening district lateral channels width widen and according to the profile of the end gate hatching AA ' of Fig. 5 among second embodiment.
Figure 26 B is a bottom opening district lateral channels width widen and according to the profile of the top gate hatching BB ' of Fig. 5 among second embodiment.
Figure 26 C is a bottom opening district lateral channels width widen and according to the profile of the sidewall lock hatching CC ' of Fig. 5 among second embodiment.
[primary clustering symbol description]
110 top gates
112 open tops
120 end gates
122 bottom openings
130 supporters
140 sidewall locks
142 filter fence
200 support tagmas
210 supporter grooves
211 obturators
212 supporter flank grooves
300 open top districts
400 bottom opening districts
500 sidewall lock districts
601 substrates
603 promote layer
605a first support body layer
605b second support body layer
605c the 3rd support body layer
605d the 4th support body layer
605e the 5th support body layer
607a first sacrifice layer
607b second sacrifice layer
610 top gate layers
611 films
701 substrates
703 promote layer
705a first support body layer
705b second support body layer
705c the 3rd support body layer
705d the 4th support body layer
705e the 5th support body layer
707a first sacrifice layer
707b second sacrifice layer
709 protective layers
710a first passage sacrifice layer
712a first passage support body layer
712b second channel support body layer
712c third channel support body layer
712d four-way support body layer
713 top gate layers
714 films
720 photoresist layers
The d1 spacing
The d2 spacing
The w1 spacing
The w2 spacing
The AF air-flow
AA ' end gate hatching
BB ' top gate hatching
CC ' sidewall lock hatching
The X position
The specific embodiment
For fully understanding the object of the invention, characteristic and effect, at present through following concrete embodiment, and cooperate appended graphicly, the present invention is done a detailed description, explain as after:
Because the progress of manufacture of semiconductor technology and panel process technique is with ripe, these technology can be done accurate control and can form the film that thickness is nano-scale easily the thickness of film.The present invention utilize non-toxic materials and utilize the manufacture of semiconductor technology or the panel process technique in thin film deposition process commonly used; As: sputter, physical vapour deposition (PVD) or chemical vapour deposition (CVD); Form the only film of nano-scale of thickness; Again through etching technique commonly used in manufacture of semiconductor technology or the panel process technique,, carry out the selective etch of different etching ratios like dry-etching, Wet-type etching or gas etch.Therefore, utilizing material and the suitable etching mode of collocation with different etching ratios, can be the channel architecture that different stepped constructions is etched into paliform with adjacent materials.Utilize manufacture of semiconductor technology or panel process technique not only accurately the thickness of key-course stack structure more can make nanoscale filter medium structure of the present invention apace; And the increase of range upon range of quantity more can increase air inlet and the gas output of air-flow and can improve the aperture opening ratio of filter medium structure.
At first see also Fig. 1, be the generalized section of nanofiltration passage of the present invention in an embodiment.This nanoscale filter medium structure comprises a top gate 110, an end gate 120 and a plurality of supporter 130; Air current A F can be got into by the open top 112 of top gate 110; Via the formed filtration channel of the spacing d1 of this supporter 130, the bottom opening 122 by end gate 120 flows out again.THICKNESS CONTROL through this supporter 130 can determine the filtration grade of filtering channel.The present invention promptly is made into nano-scale and the high filter medium structure of aperture opening ratio with this framework.
Then see also Fig. 2, be the generalized section of nanofiltration passage of the present invention in another embodiment.For improving the aperture opening ratio of filter material; Range upon range of quantity or the thickness that can in processing procedure, increase supporter 130 is to strengthen the spacing d2 of this top gate 110 and this end gate 120; And forming a sidewall lock 140 of tool plural layer in the filtration channel place, this sidewall lock 140 can be formed by a plurality of filtration fence 142.With the embodiment of Fig. 2, the filtration channel number is two, and filters fence 142 and this top gate 110 or spacing that should end gate 120 is all d1 (as shown in Figure 1).Therefore, along with the range upon range of quantity of supporter 130 or the increase of thickness, this top gate 110 and the spacing d2 of this end gate 120 are strengthened, and can in this sidewall lock 140, form more filtration channel.Aforesaid spacing d1, d2 all can be decided its height by the control on the processing procedure (like sputter, physical vapour deposition (PVD), chemical vapour deposition (CVD) or other equivalent processing procedure).Fig. 2 is an example with many increase by one filtration channels with respect to Fig. 1, can be flowed in the many paths of air current A F, so can effectively increase the aperture opening ratio of filtration channel.In addition; The aperture pitch w2 of the open top 112 of top gate 110 and the bottom opening 122 of this end gate 120 is the design of light shield capable of using and the opening that becomes micron grade that the control on the gold-tinted processing procedure makes also, and can do preliminary filtering (particle of micron grade) to the air current A F that gets into.
Then see also Fig. 3, the schematic perspective view of the nanoscale filter medium structure of the present invention in an embodiment.Fig. 3 quantizes the embodiment of structure shown in Figure 2 with manufacture of semiconductor technology or panel process technique; Show among the figure that top gate 110 has eight open tops 112; Wherein the subtend of this top gate 110 (i.e. bottom) is respectively eight bottom openings 122, and the subtend of open top 112 (i.e. bottom) is bottom gate 120.Shown in Figure 3ly be merely a kind of example, when reality is implemented, can determine the area and the open amount of this filter medium structure according to actual needs.
Then see also Fig. 4, be the schematic perspective view of the nanoscale filter medium structure of the present invention in another embodiment.Around the nanoscale filter medium structure, has this sidewall lock 140 shown in the figure equally.Fig. 3 and embodiment manufacture of semiconductor technology all capable of using or panel process technique shown in Figure 4 are made.
Then see also Fig. 5, be the vertical view of Fig. 3 and nanoscale filter medium structure shown in Figure 4.Next will with end gate section from ', top gate section BB ' and sidewall lock section CC ' explain open top district, bottom opening district, sidewall lock district and support the making flow process of tagma in fabrication steps.Wherein, the shape of those open tops 112, those top gates 110, those supporters 130 and those sidewall locks 140 is merely a kind of example, appoints to close the shape that other can constitute filter medium structure of the present invention, like circle, neitherly leaves category of the present invention.Moreover for clearly demonstrating and relatively open top district, bottom opening district, sidewall lock district and support the section of tagma in each step, among Fig. 5, sidewall lock section CC ' is amplified to that gate section BB ' is identical with end gate section AA ', top.
Then see also Fig. 6 to Figure 11, be the making flow process profile of fabrication steps in first embodiment of nanoscale filter medium structure.Fig. 6 A, Fig. 7 A, Fig. 8 A, Fig. 9 A, Figure 10 A, and Figure 11 A be the profile of end gate hatching AA ' in fabrication steps among Fig. 5; Fig. 6 B, Fig. 7 B, Fig. 8 B, Fig. 9 B, Figure 10 B, and Figure 11 B be the profile of top gate hatching BB ' in fabrication steps among Fig. 5, Fig. 6 C, Fig. 7 C, Fig. 8 C, Fig. 9 C, Figure 10 C, to reach Figure 11 C be the profile of sidewall lock hatching CC ' in fabrication steps among Fig. 5.The present invention adopts manufacture of semiconductor technology or panel process technique to make nano level filtration; The method that in fabrication steps, forms each layer comprises sputter (sputter), chemical vapour deposition technique (CVD), physical vaporous deposition (PVD) or other equivalent method; And patterning refers to manufacture of semiconductor technology or panel process technique little shadow (lithography) and etching (etching) technology commonly used, and wherein etching technique comprises dry-etching, Wet-type etching, gas etch or other equivalent engraving method.
In this first embodiment, see also Fig. 6 A, Fig. 6 B and Fig. 6 C, this nanofiltration structure can comprise support tagma 200, open top district 300, bottom opening district 400 and sidewall lock district 500.At first, carry out step (A1), a substrate 601 is provided, this substrate 601 can be used like substrate of glass (glass), wafer substrate (wafer), plastic-substrates (plastic) or other equivalent substrate.Then in this substrate 601, form one of patterning and promote layer 603.Then carry out step (A2); Promote the one first support body layer 605a that forms patterning in this substrate 601 of layer 603 and part in this of part; Promptly; On this lifting layer 603 that supports tagma 200, open top district 300 and sidewall lock district 500, have this first support body layer 605a, bottom opening district 400 does not then have this first support body layer 605a.
Then see also Fig. 7 A, Fig. 7 B and Fig. 7 C; Carry out step (A3); Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method and carry out little shadow and etching technique; Promote on the layer 603 in this of bottom opening district 400, and in open top district 300 and this first support body layer 605a in sidewall lock district 500 go up and form one first sacrifice layer (first sacrificial layer) 607a.Wherein, this sacrifice layer can be removed at last, and the present invention promptly utilizes the thickness of sacrifice layer to come the filtration grade of controlled filter channel.Under manufacture of semiconductor technology or panel process technique, the THICKNESS CONTROL of rete is quite easy and accurate.Therefore, the present invention can produce filter effect to virus for making the filtration channel, and the thickness of sacrifice layer (or height) is less than or equal to 300 nanometers.
Then see also Fig. 8 A, Fig. 8 B and Fig. 8 C; Carry out step (A4); Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method and carry out little shadow and etching technique; On this first sacrifice layer 607a in sidewall lock district 500, and the first support body layer 605a in support tagma 200 goes up formation one second support body layer 605b.Wherein in Fig. 8 C, this second support body layer 605b that supports tagma 200 and sidewall lock district 500 is continuous layer structure, and the support body layer in sidewall lock district 500 can form the filtration fence 142 shown in Fig. 2, Fig. 3, Fig. 4.The first support body layer 605a in the support tagma 200 in Fig. 8 A, Fig. 8 B, Fig. 8 C, open top district 300 and sidewall lock district 500 then can form the end gate 120 shown in Fig. 2, Fig. 3, Fig. 4.
Then see also Fig. 9 A, Fig. 9 B, Fig. 9 C; Carry out step (A5); Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method and carry out little shadow and etching technique; On this first sacrifice layer 607a in open top district 300 and bottom opening district 400, and this second support body layer 605b in sidewall lock district 500 goes up formation one second sacrifice layer 607b.
Then see also Figure 10 A, Figure 10 B, Figure 10 C; Carry out step (A6); Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method and little shadow and etching technique; On the sacrifice layer (i.e. the second sacrifice layer 607b) of the top layer in bottom opening district 400 and sidewall lock district 500, and go up formation one top gate layer (top gate layer) 610 in the support body layer (i.e. the second support body layer 605b) of the top layer that supports tagma 200.Wherein in Figure 10 B, this top gate layer 610 in bottom opening district 400 can form the top gate 110 shown in Fig. 2, Fig. 3, Fig. 4.
Then see also Figure 11 A, Figure 11 B, Figure 11 C; Carry out step (A7); Carry out final etch (finaletch), utilize etching technique, remove this like dry-etching, Wet-type etching, gas etch or other equivalent method and promote layer 603 and all sacrifice layer 607a, 607b.Carry out step (A8) at last, remove this substrate 601, promptly form like Fig. 3 or nanoscale filter medium structure shown in Figure 4.The method that removes this substrate 601 can be the technology of splitting of cutting of cutting (scribe) or other equivalence and reaches.In addition, be familiar with the manufacture of semiconductor technology or panel process technique person will be appreciated that, the different structure of Fig. 3 and side shown in Figure 4 can be reached by the design of the light shield on the processing procedure.At last, this nanofiltration structure can fit together with other fixation kit, and can become like the filtering tank that uses in the breathing mask, filter course or the nose pad filter in the mouth mask ... wait filter.
Then see also Figure 12 A, Figure 12 B, Figure 12 C; Be have five filtration channel numbers among first embodiment the nanoscale filter medium structure respectively according to the profile of the end gate hatching AA ' of Fig. 5, top gate hatching BB ', sidewall lock hatching CC ', the w1 among the figure, w2, d2 correspond respectively to w1, w2, the d2 among Fig. 1 and Fig. 2.Wherein first to five support body layer corresponds to 605a-e respectively, and first to five sacrifice layer then is removed and is not shown among the figure.Earlier figures 6 to Figure 11 has been explained the preparation method of the nanoscale filter medium structure that possesses two filtration channel numbers; Yet more filtration channel number can increase aperture opening ratio; Therefore, according to aforesaid method, after step (A5), more carry out step (A5-1); That is, repeating Fig. 8 and fabrication steps (A4) shown in Figure 9 reaches (A5) to increase the quantity of filtration channel.That is the interaction cascading of support body layer and sacrifice layer can form more filtration channel.With the nano filter medium structure of five port numbers of Figure 12, air-flow 300 gets into from the open top district, and the sidewall lock district 500 that flows through carries out nano level filtration, is flowed out by bottom opening district 400 again; Otherwise when feeling elated and exultant, air-flow 400 gets into from the bottom opening district, and the sidewall lock district 500 that flows through, and is flowed out by open top district 300 again.No matter be familiar with this operator and will be appreciated that, be air-breathingly or venting one's pent-up feelings all can make airflow passes sidewall lock district 500, and the air-flow when air-breathing not necessarily will be from the open top district 300 gets into, and also can be from the bottom opening district 400 gets into.That is this nanoscale filter medium structure does not have the restriction on the user tropism, and its upper and lower surface all can be used as air inlet face.
In this first embodiment; More can be after step (A6); Promptly remove before this lifting layer 603 and all sacrifice layer 607a, the 707b; More comprise a step (A6-1): on this top gate layer 610, form the film 612 (seeing also Figure 12 A, Figure 12 B, Figure 12 C) in order to decomposing organic matter, this film 612 can be titanium (Ti), titanium dioxide (TiO
2), platinum (Pt) ... wait material antiviral, that bacterium maybe can kill virus, bacterium, it is a kind of catalyst, in order to the organic matter on the filter medium structure is decomposed.The formation method of this film 612 can adopt physical vaporous deposition, chemical vapour deposition technique, sputter or other equivalent processing procedure.
In first embodiment, when the material of lifting layer 603, support body layer 605a-e, sacrifice layer 607a-e and top gate layer 610 selected mainly to make lifting layer 603 and sacrifice layer 607a-e to be etched, support body layer 605a-e and top gate layer 610 all were able to be retained.The example of the etching mode of (remove and promote layer and all sacrifice layers) when below table two to table seven is etching mode and the final etch of material and each rete among first embodiment when forming; The selection that it will be recognized by one of ordinary skill in the art that those materials and etching mode can not be a kind of restriction, and any other material that forms nano filter medium structure of the present invention and etching mode are neither from category of the present invention.Wherein, PAN wet etching composition is (Phosphorus acid+Aceticacid+Nitric acid) aq, and BOE wet etching composition is (HF+NH
4F) aq.
Table two
Table three
Table four
Table five
Table six
Table seven
Then see also Figure 13 to Figure 24; The making flow process profile of fabrication steps in second embodiment for the nanoscale filter medium structure; Likewise; Figure 13 A, Figure 14 A, Figure 15 A, Figure 16 A, Figure 17 A, Figure 18 A, Figure 19 A, Figure 20 A, Figure 21 A, Figure 22 A, Figure 23 A, and Figure 24 A be the profile of end gate hatching AA ' in fabrication steps among Fig. 5; Figure 13 B, Figure 14 B, Figure 15 B, Figure 16 B, Figure 17 B, Figure 18 B, Figure 19 B, Figure 20 B, Figure 21 B, Figure 22 B, Figure 23 B, and Figure 24 B figure be the profile of top gate hatching BB ' in fabrication steps among Fig. 5, Figure 13 C, Figure 14 C, Figure 15 C, Figure 16 C, Figure 17 C, Figure 18 C, Figure 19 C, Figure 20 C, Figure 21 C, Figure 22 C, Figure 23 C, to reach Figure 24 C be the profile of sidewall lock hatching CC ' in fabrication steps among Fig. 5.The stacked structure of the same formation of this second embodiment and first embodiment is utilized etching mode to accomplish each again and is filtered channel.Right this second embodiment adopts disposable generation type when forming stacked structure, next will each step in the processing procedure be described with Figure 13 to Figure 24.
In this first embodiment, see also Figure 13 A, Figure 13 B, Figure 13 C, this nanofiltration structure can comprise support tagma 200, open top district 300, bottom opening district 400 and sidewall lock district 500.At first, carry out step (B1), a substrate 701 is provided, this substrate 701 can be used like substrate of glass (glass), wafer substrate (wafer), plastic-substrates (plastic) or other equivalent substrate.Then in this substrate 701, form one of patterning and promote layer 703.Then carry out step (B2); Promote the one first support body layer 705a that forms patterning in this substrate 701 of layer 703 and part in this of part; Promptly; On this lifting layer 703 that supports tagma 200, open top district 300 and sidewall lock district 500, have this first support body layer 705a, bottom opening district 400 does not then have this first support body layer 705a.
Then see also Figure 14 A, Figure 14 B, Figure 14 C; Carry out step (B3); Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method and carry out little shadow and etching technique; Promote on the layer 703 in this of bottom opening district 400, and in open top district 300 and this first support body layer 705a in sidewall lock district 500 go up and form one first sacrifice layer (first sacrificial layer) 707a.Wherein, the thickness of sacrifice layer (or height) is less than or equal to 300 nanometers.
Then see also Figure 15 A, Figure 15 B, Figure 15 C; Carry out step (B4); Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method and carry out little shadow and etching technique; On this first sacrifice layer 707a in sidewall lock district 500, and the first support body layer 705a in support tagma 200 goes up formation one second support body layer 705b.Wherein in Figure 15 C, this second support body layer 705b that supports tagma 200 and sidewall lock district 500 is continuous layer structure, and the support body layer in sidewall lock district 500 can form the filtration fence 142 shown in Fig. 2, Fig. 3, Fig. 4.The first support body layer 705a in the support tagma 200 in Figure 15 A, Figure 15 B, Figure 15 C, open top district 300 and sidewall lock district 500 then can form the end gate 120 shown in Fig. 2, Fig. 3, Fig. 4.
Then see also Figure 16 A, Figure 16 B, Figure 16 C; Carry out step (B5); Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method, in those open top districts 300, those bottom opening districts 400, those sidewall lock districts 500 and those support tagma 200 and form one second sacrifice layer 707b.
Then see also Figure 17 A, Figure 17 B, Figure 17 C; Carry out step (B6); Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method, in those open top districts 300, those bottom opening districts 400, those sidewall lock districts 500 and those support tagma 200 and form one the 3rd support body layer 705c.Carry out step (B7), use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method, in those open top districts 300, those bottom opening districts 400, those sidewall lock districts 500 and those support tagma 200 and form a protective layer 709.
Then see also Figure 18 A, Figure 18 B, Figure 18 C, carry out step (B8), those are supported tagma 200 carry out etching and remove the 3rd support body layer 705c at least respectively forming a supporter groove 210 to support in the tagma 200 in each.Because the formation of those supporter grooves 210 must be adopted non-equal tropism's etch process of higher-wattage; Patterned light blockage layer 720 is etched down in the removed situation of edge of opening generation photoresistance high-power non-equal tropism easily; And rete under the photoresist layer 720 is etched and causes the control of live width homogeneity to be difficult for; Especially in filtration channel quantity more for a long time, the time of high-power non-equal tropism's etching action can be longer, and the edge of opening of photoresist layer 720 can be removed more serious.Therefore, utilize the setting of this protective layer 709, can protect the rete under it not receive etched influence of high-power non-equal tropism; The material of this protective layer 709 can be resisted high-power etching; For instance, high-power non-equal tropism's etching can be a dry etching technology, and 709 pairs of wet etching reaction degree of this protective layer are bigger; Therefore; Can carry out wet etching earlier protective layer 709 is etched an opening, utilize high-power dry ecthing to carry out the formation of those supporter grooves 210 again, under the collocation of photoresist layer 720 and protective layer 709, can guarantee that the rete under it is injury-free.
In addition, remove the 3rd support body layer 705c in the step (B8) at least, it can adopt the etch endpoint detection device, and (End Point Detector EPD) carries out the control of etch depth.It will be recognized by one of ordinary skill in the art that any other can reach all applicable the present invention of control technology of same etch effect.
Then see also Figure 19 A, Figure 19 B, Figure 19 C; Carry out step (B9); In those supporter grooves 210, carry out lateral etch and remove sacrifice layer partly forming a plurality of supporter flank grooves 212 in tagmas 200 to support in those; And after forming those supporter flank grooves 212, remove this photoresist layer 720.
Then see also Figure 20 A, Figure 20 B, Figure 20 C, carry out step (B10), in those supporter grooves 210 and those supporter flank grooves 212, fill to form a plurality of obturators 211.As shown in the figure, those obturators 211 are for those support the main pillar in the tagma 200, and utilize the extension of those flank grooves 212 to make whole structure more firm.The material of obturator can be selected flexual material for use, as: polymer (polymer), it can make the filter medium structure body have higher flexible degree and can increase stability of structure.With polymer, earlier polymer is inserted in those supporter grooves 210 and those supporter flank grooves 212, utilize hot stove to heat again with cure polymer.
Then see also Figure 21 A, Figure 21 B, Figure 21 C, carry out step (B11), those open top districts 300 and those bottom opening districts 400 are carried out etching and remove the 3rd support body layer 705c at least.As step (B8), utilize the collocation of photoresist layer 720 and different etching techniques, earlier etching protection layer is gone out an opening, carry out high-power non-equal tropism's etching again.And the control of carrying out etch depth equally is to remove the 3rd support body layer 705c at least, and it also can adopt aforesaid etch endpoint detection device to reach, and after etching is accomplished, removes photoresist layer 720.
Then see also Figure 22 A, Figure 22 B, Figure 22 C; Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method and little shadow and etching technique to carry out step (B12), in those open top districts 300, those bottom opening districts 400, those sidewall lock districts 500 and part those support a first passage sacrifice layer 710a of tagmas 200 formation patternings.
Then see also Figure 23 A, Figure 23 B, Figure 23 C; Use sputter, chemical vapour deposition technique, physical vaporous deposition or other equivalent method and little shadow and etching technique to carry out step (B13), in those bottom opening districts 400, those sidewall lock districts 500 and those support tagma 200 formation one top gate layer 713.Wherein in Figure 23 B, this top gate layer 713 in bottom opening district 400 can form the top gate 110 shown in Fig. 2, Fig. 3, Fig. 4.
Then see also Figure 24 A, Figure 24 B, Figure 24 C; Carry out step (B14); Carry out final etch, utilize etching technique, remove this like dry-etching, Wet-type etching, gas etch or other equivalent method and promote layer 703 and all sacrifice layer 707a, 707b, 710a.Carry out step (B15) at last, remove this substrate 701, promptly form like Fig. 3 or nanoscale filter medium structure shown in Figure 4.The method that removes this substrate 701 can be the technology of splitting of cutting of cutting (scribe) or other equivalence and reaches.
Then see also Figure 25 A, Figure 25 B, Figure 25 C; Be have five filtration channel numbers among second embodiment the nanoscale filter medium structure respectively according to the profile of the end gate hatching AA ' of Fig. 5, top gate hatching BB ', sidewall lock hatching CC ', the w1 among the figure, w2, d2 correspond respectively to w1, w2, the d2 among Fig. 1 and Fig. 2.Wherein first to five support body layer corresponds to 705a-e respectively.Aforementioned Figure 13 to Figure 24 has explained the preparation method of the nanoscale filter medium structure that possesses three filtration channel numbers; Yet more filtration channel number can increase aperture opening ratio; Therefore, according to aforesaid method, after step (B6), more carry out step (B6-1); That is, repeating fabrication steps (B5) reaches (B6) to increase the quantity of filtration channel.That is the interaction cascading of support body layer and sacrifice layer can form more filtration channel.Moreover in step (B6-1), final step can be step (B5), makes the layer of last formation be sacrifice layer, and at this moment, this protective layer 709 can be used as the function of support body layer, a filtration channel and increase more.
Then seeing also Figure 26 A, Figure 26 B, Figure 26 C, is bottom opening district lateral channels width widen and respectively according to the profile of the end gate hatching AA ' of Fig. 5, top gate hatching BB ', sidewall lock hatching CC ' among second embodiment.In this second embodiment, can after step (B12), more comprise two steps: (B12-1) in those sidewall lock districts 500 and those support the first passage support body layer 712a that tagmas 200 form patternings; And (B12-2) repeating step (B12) and (B12-1) in regular turn, with the passage support body layer 712a-712b that forms plural layer and the passage sacrifice layer of plural layer, and to make the series of strata of last formation be the passage sacrifice layer.This two steps system makes bottom opening district 400 widen (seeing also Figure 26 B) in the channel width of side.Formed filtration channel quantity is got over for a long time in abovementioned steps (B6-1), and just widening of the lateral channels width in bottom opening district 400 seems useful more.Can use three to four layers passage sacrifice layer to increase the channel width of the side channel in bottom opening district 400 for instance.In the example of Figure 26 A, Figure 26 B, Figure 26 C, adopt three layers passage sacrifice layer (seeing also the X position among Figure 26 B).
Aforesaid step (B6-1), (B12-1) reach the control that (B12-2) can do range upon range of quantity according to actual needs.
In this second embodiment; More can be after step (B13); Promptly remove before this lifting layer 703 and all sacrifice layer 707a, 707b, the 710a; More comprise a step (B13-1): gate layer 712a goes up a film 714 (seeing also Figure 25 or Figure 26) that forms in order to decomposing organic matter in this top, and this film 714 can be titanium (Ti), titanium dioxide (TiO
2), platinum (Pt) ... wait material antiviral, that bacterium maybe can kill virus, bacterium, it is a kind of catalyst, in order to the organic matter on the filter medium structure is decomposed.The formation method of this film 714 can adopt physical vaporous deposition, chemical vapour deposition technique, sputter or other equivalent processing procedure.
The example of the etching mode of (remove and promote layer and all sacrifice layers) when below table eight to table ten three is etching mode and the final etch of material and each rete among second embodiment when forming; Be familiar with the selection that this operator will be appreciated that those materials and etching mode and can not be a kind of restriction, any other material and etching mode that forms nano filter medium structure of the present invention is neither from category of the present invention.Wherein, PAN wet etching composition is (Phosphorus acid+Acetic acid+Nitric acid) aq, and BOE wet etching composition is (HF+NH
4F) aq.
Table eight
Table nine
Table ten
Table ten one
Table ten two
Table ten three
The manufacturing approach that aforementioned two embodiment are adopted; Those bottom opening districts 400 can form this top gate 110 among Fig. 2, Fig. 3, Fig. 4; Those open top districts 300 can form this end gate 120 among Fig. 2, Fig. 3, Fig. 4; Those 500 in sidewall lock districts can form this sidewall lock 140 among Fig. 2, Fig. 3, Fig. 4, and those support 200 those supporters 130 that form among Fig. 2, Fig. 3, Fig. 4 in tagma.In addition, those support the confluce that tagma 200 is positioned at those sidewall lock districts 500.
Thus, utilize the manufacture of semiconductor technology make this nanoscale filter medium structure can reach easily nanoscale the filtration fence making and make this nanoscale filter medium structure apace.The thickness of each rete also can be adjusted the thickness of each rete according to actual needs by control effectively, and the control of the thickness of sacrifice layer more can determine the filtration grade of filter medium structure.One of the top gate of micro-meter scale and end gate more can be made micron-sized preliminary filtration to the air-flow that flows into, and can prolong the life-span of filter material.The design of multiple range upon range of filtration fence more can promote the aperture opening ratio of filter material, and it is air-breathing or venting one's pent-up feelings that the user can be carried out across filter material like a cork.Be formed with in order to the film of decomposing organic matter in the filter medium structure surface and more can resist or kill virus, bacterium.
The present invention describes with preferred embodiment hereinbefore, it will be understood by those skilled in the art that so this embodiment only is used to describe the present invention, and should not be read as restriction scope of the present invention.It should be noted,, all should be made as and be covered by in the category of the present invention such as with the variation and the displacement of this embodiment equivalence.Therefore, protection scope of the present invention is when being as the criterion with what claims defined.
Claims (18)
1. a nanoscale filter medium structure of breathing usefulness is characterized in that, comprises:
One top gate has a plurality of open tops;
One end gate is parallel to this top gate and has a plurality of bottom openings, and those bottom openings and those open tops are staggered mutually;
A plurality of sidewall locks, between this top gate and this end gate and adjacent to an open top and a bottom opening, each sidewall lock has a plurality of filtration fence that are parallel to this top gate and this end gate and forms a plurality of filtration channels; And
A plurality of supporters are between this top gate and this end gate and be positioned at the confluce of two sidewall locks;
Wherein, those filtration channels have the channel height below 300 nanometers.
2. nanoscale filter medium structure as claimed in claim 1 is characterized in that, the length of side of those open tops and those bottom openings has the length of micro-meter scale.
3. nanoscale filter medium structure as claimed in claim 1 is characterized in that, those sidewall locks be positioned at those open tops and those bottom openings around.
4. nanoscale filter medium structure as claimed in claim 1 is characterized in that, the end face of this top gate more comprises the film in order to decomposing organic matter.
5. nanoscale filter medium structure as claimed in claim 1 is characterized in that, comprises an obturator in each supporter.
6. nanoscale filter medium structure as claimed in claim 5 is characterized in that, the material of this obturator is a polymer.
7. the manufacturing approach of the nanoscale filter medium structure of a breathing usefulness as claimed in claim 1; It is characterized in that; This nanoscale filter medium structure comprises a plurality of open tops district, a plurality of bottom openings district, a plurality of sidewall lock district and a plurality of supports tagma; An adjacent open top district, each sidewall lock district and a bottom opening district, those supporter districts are positioned at the confluce in two sidewall lock districts, and it comprises the following step:
(A1) in a substrate, form one of patterning and promote layer;
(A2) on this of part promotes this substrate of layer and part, form one first support body layer of patterning, make those bottom opening districts not have this first support body layer;
(A3) on this lifting layer in those bottom opening districts, and one first sacrifice layer that on this first support body layer in those open top districts and those sidewall lock districts, forms patterning;
(A4) in those sidewall lock districts and those support one second support body layer that tagmas form patternings;
(A5) in those open top districts, those bottom opening districts and those sidewall lock districts form one second sacrifice layer of patterning;
(A6) on the sacrifice layer of the top layer in those bottom opening districts and those sidewall lock districts, and, those form a top gate layer on supporting the support body layer of top layer in tagmas;
(A7) remove this lifting layer and all sacrifice layer; And
(A8) remove this substrate;
Wherein, aforementioned each sacrifice layer is formed the thickness that is less than or equal to 300 nanometers.
8. manufacturing approach as claimed in claim 7 is characterized in that, the patterning by this first support body layer in step (A2) makes the length of side in those open top districts and those bottom opening districts have the length of micro-meter scale.
9. manufacturing approach as claimed in claim 7 is characterized in that, in step (A4), more comprising has those sidewall lock districts with all defining around those open top districts and those bottom opening districts.
10. manufacturing approach as claimed in claim 7 is characterized in that, after step (A5), more comprises a step (A5-1): repeating step (A4) reaches (A5) in regular turn, with the support body layer of formation plural layer and the sacrifice layer of plural layer.
11. manufacturing approach as claimed in claim 7 is characterized in that, in more comprising a step (A6-1) after the step (A6): on this top gate layer, form the film in order to decomposing organic matter.
12. the manufacturing approach of the nanoscale filter medium structure of a breathing usefulness as claimed in claim 1; It is characterized in that; This nanoscale filter medium structure comprises a plurality of open tops district, a plurality of bottom openings district, a plurality of sidewall lock district and a plurality of supports tagma; An adjacent open top district, each sidewall lock district and a bottom opening district, those supporter districts are positioned at the confluce in two sidewall lock districts, and it comprises the following step:
(B1) in a substrate, form one of patterning and promote layer;
(B2) on this of part promotes this substrate of layer and part, form one first support body layer of patterning, make those bottom opening districts not have this first support body layer;
(B3) in those bottom opening districts, those open top districts and those sidewall lock districts form one first sacrifice layer of patterning;
(B4) in those sidewall lock districts and those support one second support body layer that tagmas form patternings;
(B5) in those open top districts, those bottom opening districts, those sidewall lock districts and those support the tagma and form one second sacrifice layer;
(B6) in those open top districts, those bottom opening districts, those sidewall lock districts and those support the tagma and form one the 3rd support body layer;
(B7) in those open top districts, those bottom opening districts, those sidewall lock districts and those support the tagma and form a protective layer;
(B8) those are supported the tagma carries out etching and removes the 3rd support body layer at least forming a supporter groove with each;
(B9) in those supporter grooves, carry out lateral etch and remove the part sacrifice layer to form a plurality of supporter flank grooves;
(B10) in those supporter grooves and those supporter flank grooves, fill to form a plurality of obturators;
(B11) those open top districts and those bottom opening districts are carried out etching and remove the 3rd support body layer at least;
(B12) in those open top districts, those bottom opening districts, those sidewall lock districts and part those support the first passage sacrifice layer that tagmas form patternings;
(B13) in those bottom opening districts, those sidewall lock districts and those support the tagma and form a top gate layer;
(B14) remove this lifting layer and all sacrifice layer; And
(B15) remove this substrate;
Wherein, aforementioned each sacrifice layer is formed the thickness that is less than or equal to 300 nanometers.
13. manufacturing approach as claimed in claim 12 is characterized in that, the patterning by this first support body layer in step (B2) makes the length of side in those open top districts and those bottom opening districts have the length of micro-meter scale.
14. manufacturing approach as claimed in claim 12 is characterized in that, in step (B4), more comprising has those sidewall lock districts with all defining around those open top districts and those bottom opening districts.
15. manufacturing approach as claimed in claim 12 is characterized in that, after step (B6), more comprises a step (B6-1): repeating step (B5) reaches (B6) in regular turn, with the support body layer of formation plural layer and the sacrifice layer of plural layer.
16. manufacturing approach as claimed in claim 15 is characterized in that, in step (B6-1), the layer that forms at last is a sacrifice layer.
17. the manufacturing approach as claim 12 is stated is characterized in that, after step (B12), more comprises:
(B12-1) in those sidewall lock districts and those support the first passage support body layer that tagmas form patternings; And
(B12-2) repeating step (B12) reaches (B12-1) in regular turn, with the passage support body layer of formation plural layer and the passage sacrifice layer of plural layer, and makes the layer of last formation be the passage sacrifice layer.
18. manufacturing approach as claimed in claim 12 is characterized in that, in more comprising a step (B13-1) after the step (B13): on this top gate layer, form the film in order to decomposing organic matter.
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| US5275766A (en) * | 1992-10-30 | 1994-01-04 | Corning Incorporate | Method for making semi-permeable polymer membranes |
| US5948255A (en) * | 1994-03-07 | 1999-09-07 | The Regents Of The University Of California | Microfabricated particle thin film filter and method of making it |
| CN1456845A (en) * | 2003-06-07 | 2003-11-19 | 霍明远 | Method and device of antivirus air conditioning filtration |
| CN101168113A (en) * | 2006-10-26 | 2008-04-30 | 康那香企业股份有限公司 | Solid-liquid separating type filter material for film biological processing and filter and filtering module |
| CN101415475A (en) * | 2006-03-31 | 2009-04-22 | 派瑞设备公司 | Layered filter for treatment of contaminated fluids |
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|---|---|---|---|---|
| US5275766A (en) * | 1992-10-30 | 1994-01-04 | Corning Incorporate | Method for making semi-permeable polymer membranes |
| US5948255A (en) * | 1994-03-07 | 1999-09-07 | The Regents Of The University Of California | Microfabricated particle thin film filter and method of making it |
| CN1456845A (en) * | 2003-06-07 | 2003-11-19 | 霍明远 | Method and device of antivirus air conditioning filtration |
| CN101415475A (en) * | 2006-03-31 | 2009-04-22 | 派瑞设备公司 | Layered filter for treatment of contaminated fluids |
| CN101168113A (en) * | 2006-10-26 | 2008-04-30 | 康那香企业股份有限公司 | Solid-liquid separating type filter material for film biological processing and filter and filtering module |
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