CN102012631A - Detection method of mask plate - Google Patents
Detection method of mask plate Download PDFInfo
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- CN102012631A CN102012631A CN2009101952171A CN200910195217A CN102012631A CN 102012631 A CN102012631 A CN 102012631A CN 2009101952171 A CN2009101952171 A CN 2009101952171A CN 200910195217 A CN200910195217 A CN 200910195217A CN 102012631 A CN102012631 A CN 102012631A
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Abstract
The invention provides a detection method of a mask plate, which comprises the steps of: pre-calculating target exposure energy according to target characteristic sizes of a photo mask pattern formed in a mask layer; providing the mask plate and a semiconductor substrate, arranging an opening pattern on the mask plate and a photo mask layer on the semiconductor substrate; exposing the photo mask layer on a partial region on the semiconductor substrate through penetrating the mask plate by using the test exposure energy less than the target exposure energy; developing and forming the photo mask pattern; and detecting the photo mask pattern. The invention can be used for detecting defects on the mask plate.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of detection method of mask plate.
Background technology
In semiconductor fabrication, to utilize usually lithography step with the graph copying on the mask plate in the rete on semiconductor structure surface.Fig. 1 is the step of exposure synoptic diagram in a kind of photoetching method of prior art, and with reference to figure 1, the step of photoetching specifically comprises: in surface-coated protective film of the semiconductor-based ends 4; Adjust light source 1, mask plate 2 and the distance at the semiconductor-based end 4, have on the mask plate 2 can printing opacity opening figure 5, the illumination that light source is passed from the opening figure on the mask plate 2 is mapped on the protective film 6 at the semiconductor-based end 4, thereby make pattern imaging on the mask plate 2 to the semiconductor-based end 4, the place of protective film 6 corresponding opening figure is exposed like this; Protective film 6 after exposure becomes and is developed the liquid cleaning easily, and does not have the protective film 6 at the position of exposure to be not easy to be cleaned accordingly; Then clean with developer solution, protective film 6 exposed areas are removed, so just form the rete of patterning on the semiconductor-based end 4, the rete of this patterning can be protected semiconductor structure, also can be used as the mask in the subsequent etching process.
Be the manufacture method that discloses a kind of exposure amount monitor method and semiconductor devices in the Chinese patent application of " 03148293.7 " for example in the patent No..
When utilizing above-mentioned photoetching method that semiconductor structure is carried out photoetching, exposure is the comparison critical step, wherein exposure be with the graph copying on the mask plate in semiconductor structure, so the cleaning of mask plate is very crucial.The inventor finds that in test because the ion in the environment forms attachment easily on mask plate, these attachments impact exposure light, and defective takes place in the relevant position that makes the exposure back form semiconductor structure.Because these attachments of mask plate become big gradually from little often, when attachment is less, be not easy like this to find, waited until enough big and often will bring more serious defective.
Summary of the invention
The technical matters that the present invention solves is can the attachment on the mask plate be detected.
In order to address the above problem, the invention provides a kind of detection method of mask plate, comprise step: calculate the target exposure energy according to the target signature size of the light mask pattern that in mask layer, forms in advance; The mask plate and the semiconductor-based end, are provided, on described mask plate, have opening figure, on the described semiconductor-based end, have the photomask layer; Utilization sees through mask plate the suprabasil subregion of described semiconductor photomask layer is exposed less than the test exposure energy of target exposure energy; Develop, form light mask pattern; Described light mask pattern is detected.
Optionally, described test exposure energy is less than or equal to 95% of target exposure energy.
Optionally, described light mask pattern is the light mask pattern that etching forms through hole or groove.
Optionally, described light mask pattern is the light mask pattern that etching forms grid.
Optionally, also comprise step:
Utilization is greater than the first test exposure energy of target exposure energy, sees through the photomask layer exposure of mask plate to first area at the described semiconductor-based end, and described first area is different from and utilizes test exposure energy exposed areas.
Optionally, also comprise step:
Utilize the target exposure energy, see through the photomask layer exposure of mask plate to second area at the described semiconductor-based end, described second area is different from and utilizes test exposure energy exposed areas.
Optionally, also comprise step:
Utilize the target exposure energy, see through the photomask layer exposure of mask plate to second area at the described semiconductor-based end, described second area is different from and utilizes test exposure energy exposed areas.
Optionally, the described first test exposure energy is more than or equal to 105% of target exposure energy.
Optionally, described test exposure energy is less than or equal to 95% of target exposure energy.
Compare with prior art, the invention has the advantages that:
By utilizing test exposure energy to expose less than the target exposure energy, form light mask pattern through the back of developing again, thereby the characteristic dimension of light mask pattern is amplified, thereby be convenient to observation, and reduced the interference that other rete causes, therefore very little at attachment, and when also not causing fatal defective, can in time find, in advance prevention.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is the step of exposure synoptic diagram in a kind of photoetching method of prior art;
Fig. 2 is the detection method process flow diagram of mask plate of the present invention;
Fig. 3 to Fig. 5 is the synoptic diagram of detection method one embodiment of mask plate of the present invention;
Fig. 6 is the synoptic diagram that utilizes after detection method of the present invention detects.
Embodiment
From background technology as can be known, exposure is the comparison critical step, wherein exposure be with the graph copying on the mask plate in semiconductor structure, so the cleaning of mask plate is very crucial.The inventor finds in test, some ions in the environment, and for example ammonia radical ion and sulfate ion generate attachment easily, and these attachments impact exposure light, make the relevant position of semiconductor structure also form defective.Because the attachment on the mask plate becomes big gradually from little often, be not easy when attachment is less like this to find that attachment is enough big by the time often more serious defective will take place.
The inventor finds that under study for action when the semiconductor-based end after the photoetching was tested, the semiconductor-based end that is arranged in the Waffer edge position was owing to the defective that attachment on the mask plate causes is more than the semiconductor-based end of wafer middle position.Think because big more after inventor's research the closer to the light mask pattern characteristic dimension (CD) of Waffer edge position, it is big more to that is to say that opaque patterns on the position mask plate at edge is exaggerated, because the attachment on the mask plate is equivalent to opaque patterns, therefore the closer to the attachment of the position at edge also be exaggerated big more, the influence that the semiconductor-based end of submarginal position is subjected to the attachment on the mask plate is just big more, and therefore defective is found at the semiconductor-based end of submarginal position easily.
Therefore the inventor provides a kind of detection method of mask plate, comprises step: calculate the target exposure energy according to the target signature size of the light mask pattern that forms in advance in mask layer; The mask plate and the semiconductor-based end, are provided, on described mask plate, have opening figure, on the described semiconductor-based end, have the photomask layer; Utilization sees through mask plate the suprabasil subregion of described semiconductor photomask layer is exposed less than the test exposure energy of target exposure energy; Develop, form light mask pattern; Described light mask pattern is detected.
Optionally, described test exposure energy is less than or equal to 95% of target exposure energy.
Optionally, described light mask pattern is the light mask pattern that etching forms through hole or groove.
Optionally, described light mask pattern is the light mask pattern that etching forms grid.
Optionally, also comprise step:
Utilization is greater than the first test exposure energy of target exposure energy, sees through the photomask layer exposure of mask plate to first area at the described semiconductor-based end, and described first area is different from and utilizes test exposure energy exposed areas.
Optionally, also comprise step:
Utilize the target exposure energy, see through the photomask layer exposure of mask plate to second area at the described semiconductor-based end, described second area is different from and utilizes test exposure energy exposed areas.
Optionally, also comprise step:
Utilize the target exposure energy, see through the photomask layer exposure of mask plate to second area at the described semiconductor-based end, described second area is different from and utilizes test exposure energy exposed areas.
Optionally, the described first test exposure energy is more than or equal to 105% of target exposure energy.
Optionally, described test exposure energy is less than or equal to 95% of target exposure energy.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 2 is the detection method process flow diagram of mask plate of the present invention, below with reference to Fig. 2 mask plate detection method of the present invention is described.
Light beam will see through the opening on the mask plate in the exposure process of photoetching, shine on the photomask layer at the semiconductor-based end, exposed in the removed position of needs, if the photomask layer is a positive photoresist then the position that is exposed can be developed liquid washes off, becomes and be difficult for being developed liquid and wash off if photoresist is negativity then the position that is exposed.Then through being developed in the light mask pattern that forms required characteristic dimension in the photomask layer.
Light mask pattern can define the semiconductor-based end and need form the position of through hole, groove or grid, the position that needs to form through hole or groove is exposed by mask pattern, the position that needs to form grid is covered by mask pattern, in further etching, just can form through hole, groove or grid like this.
Be that example describes in the present embodiment with the positive photoresist.
Mask plate detection method of the present invention comprises step:
S10: calculate the target exposure energy according to the target signature size of the light mask pattern that in mask layer, forms in advance.
Because exposure energy is big more, then see through the mask plate aperture position, the size that shines on the photomask layer is big more, the area that just is exposed is big more, the characteristic dimension of the light mask pattern that forms in the photomask layer afterwards through developing is more little like this, and the characteristic dimension of the opening between the mask pattern is big more.Therefore need the light mask pattern that forms the target signature size corresponding to a target exposure energy.
When for example forming the mask pattern of through hole correspondence, the characteristic dimension of the opening between the mask pattern just and the characteristic dimension correspondence of through hole so just can be known the characteristic dimension of required mask graph by the characteristic dimension of the opening between the mask pattern.And when forming the mask pattern of grid correspondence, the characteristic dimension of mask pattern just and the characteristic dimension correspondence of grid.
Can utilize method well known to those skilled in the art in this step, calculate the required target exposure energy of target signature size of the light mask pattern that forms, for example the target signature of light mask pattern is of a size of 0.16um, and then required exposure energy is 6mW.
After this step obtains the target exposure energy, this target exposure energy can be stored, when subsequent step need use this target exposure energy, call, therefore this step can only be carried out once when mask plate begins to detect, no longer carry out afterwards, and the following step execution that can circulate.
S20: the mask plate and the semiconductor-based end are provided, on described mask plate, have opening figure, on the described semiconductor-based end, have the photomask layer.
Concrete, as shown in Figure 3, the semiconductor-based end 110 can also can be a silicon-on-insulator (SOI) for the silicon or the SiGe (SiGe) of monocrystalline, polycrystalline or non crystalline structure, the material that can also comprise other, for example indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide or gallium antimonide.The semiconductor-based end 110, also can comprise semiconductor device layer.The semiconductor-based end 110, also can comprise other rete, for example polysilicon layer.On the semiconductor-based end 110, can utilize spin coating (spin on) technology coating photomask layer 120, shown in the photomask layer can comprise: bottom anti-reflective (BARC) layer 120a and photoresist layer 120b, the thickness of BARC layer 120a can for
The thickness of photoresist layer 120b can for
Shown in mask plate 130 constitute by the cadmium rete 130b of the patterning on glass plate 130a and its, cadmium rete 130b has opening figure 130c in the position that needs printing opacity.Need the position of printing opacity to have attachment 130d at mask plate 130.
S30: utilize test exposure energy, see through mask plate the suprabasil subregion of described semiconductor photomask layer is exposed less than the target exposure energy.
With reference to figure 4, in the present embodiment, because utilized positive photoresist, therefore in exposure process, need the position 120b1 that will form through hole or groove be exposed, thereby remove the photomask layer of through hole or groove position, just the corresponding position beyond through hole or groove forms mask pattern.The position 120b2 that will form grid is not exposed, thus the photomask layer of reservation gate location, and just the grid correspondence position forms mask pattern.
In the present embodiment, the test exposure energy is less than the target exposure energy.Preferred test exposure energy is less than or equal to 95% of target exposure energy, and for example 90%, 80%, 70%, 40%, for example Bao Guang energy is that 6mW * (1-5%), the characteristic dimension of formation light mask pattern is 0.17um.
Because the figure on the mask plate is copied in the photomask layer, the corresponding light mask pattern of the lightproof part on the mask plate wherein, opening between the corresponding light mask pattern in light transmission part, if therefore formed attachment in the light transmission part on the mask plate, attachment also is equivalent to lightproof part so, also be copied in the mask layer, form light mask pattern 120b3.Because the test exposure energy less than the target exposure energy, is therefore compared with ordinary production, mask pattern is exaggerated, and same attachment also is exaggerated, thereby is convenient to detect the discovery attachment.
S40: develop, form light mask pattern.
With reference to figure 5, this step can be utilized developing method well known to those skilled in the art, for example cleans with developer solution.
S50: described light mask pattern is detected.
Can utilize method well known to those skilled in the art to detect.For example utilize electron microscopic to amplify, the aperture position of mask pattern is observed, when attachment, then the aperture position of light mask pattern may be by UNICOM.
In actual production, the characteristic dimension of light mask pattern can not be amplified, therefore just be not easy observation.And utilize detection method of the present invention when light mask pattern is detected, because the size of light mask pattern and defective has all increased, therefore in to the detection of light mask pattern, find the defective of mask plate easily, and because there is not the rete of lower floor, for example therefore the interference of the height of polysilicon layer fluctuating is more prone to pinpoint the problems.
And the foregoing description can be used to form in the light mask pattern of etching through hole, groove or grid.
In another embodiment of the present invention, also comprise step: utilize the first test exposure energy, see through the photomask layer exposure of mask plate to first area at the described semiconductor-based end greater than the target exposure energy.Just utilize this step of exposure that the characteristic dimension of light mask pattern and attachment is all dwindled, thereby weigh the order of severity of the defective on the mask plate, need to judge whether to clean.
Preferably, the first test exposure energy is more than or equal to 105% of target exposure energy, and for example 110%, 120%, 130%, 140%, for example Bao Guang energy is 6mW * (1+5%).
In another embodiment, also comprise step: utilize the target exposure energy, see through the photomask layer exposure of mask plate to second area at the described semiconductor-based end.Just also utilize the target exposure energy of ordinary production another regional exposure formation light mask pattern to the semiconductor substrate, like this can be by the light mask pattern of target exposure energy exposure formation, weigh the order of severity of the defective on the mask plate, need to judge whether to clean.
Above-mentioned first area and second area are different from and utilize test exposure energy exposed areas.
Fig. 6 is the synoptic diagram that utilizes after detection method of the present invention detects, and as shown in Figure 6, frame of broken lines is the position that attachment forms defective, utilize detection method of the present invention can pass through to amplify attachment, when attachment does not also cause fatal defective, in time find, in advance prevention.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (9)
1. the detection method of a mask plate is characterized in that, comprises step: calculate the target exposure energy according to the target signature size of the light mask pattern that forms in advance in mask layer;
The mask plate and the semiconductor-based end, are provided, on described mask plate, have opening figure, on the described semiconductor-based end, have the photomask layer;
Utilization sees through the photomask layer exposure of mask plate to the suprabasil subregion of described semiconductor less than the test exposure energy of target exposure energy;
Develop, form light mask pattern;
Described light mask pattern is detected.
2. detection method according to claim 1 is characterized in that, described test exposure energy is less than or equal to 95% of target exposure energy.
3. detection method according to claim 2 is characterized in that, described light mask pattern is the light mask pattern that etching forms through hole or groove.
4. detection method according to claim 2 is characterized in that, described light mask pattern is the light mask pattern that etching forms grid.
5. detection method according to claim 1 is characterized in that, also comprises step:
Utilization is greater than the first test exposure energy of target exposure energy, sees through the photomask layer exposure of mask plate to first area at the described semiconductor-based end, and described first area is different from and utilizes test exposure energy exposed areas.
6. detection method according to claim 5 is characterized in that, also comprises step:
Utilize the target exposure energy, see through the photomask layer exposure of mask plate to second area at the described semiconductor-based end, described second area is different from and utilizes test exposure energy exposed areas.
7. detection method according to claim 1 is characterized in that, also comprises step:
Utilize the target exposure energy, see through the photomask layer exposure of mask plate to second area at the described semiconductor-based end, described second area is different from and utilizes test exposure energy exposed areas.
8. according to claim 6 or 7 described detection methods, it is characterized in that the described first test exposure energy is more than or equal to 105% of target exposure energy.
9. according to claim 6 or 7 described detection methods, it is characterized in that described test exposure energy is less than or equal to 95% of target exposure energy.
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| CN2009101952171A CN102012631A (en) | 2009-09-04 | 2009-09-04 | Detection method of mask plate |
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| CN2009101952171A CN102012631A (en) | 2009-09-04 | 2009-09-04 | Detection method of mask plate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102411260A (en) * | 2011-11-28 | 2012-04-11 | 上海华力微电子有限公司 | Mask plate defect detection method |
| CN103413783A (en) * | 2013-07-31 | 2013-11-27 | 北京京东方光电科技有限公司 | Array substrate, method for manufacturing same and display device |
| CN105892224A (en) * | 2016-06-24 | 2016-08-24 | 上海华虹宏力半导体制造有限公司 | Method for detecting quality of mask |
| CN107209451A (en) * | 2015-02-03 | 2017-09-26 | Asml荷兰有限公司 | Mask assembly and associated method |
| CN112648920A (en) * | 2019-10-12 | 2021-04-13 | 上海微电子装备（集团）股份有限公司 | Mask opening size measuring method, mask plate stretching device and screen expanding machine |
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2009
- 2009-09-04 CN CN2009101952171A patent/CN102012631A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102411260A (en) * | 2011-11-28 | 2012-04-11 | 上海华力微电子有限公司 | Mask plate defect detection method |
| CN102411260B (en) * | 2011-11-28 | 2014-07-16 | 上海华力微电子有限公司 | Mask plate defect detection method |
| CN103413783A (en) * | 2013-07-31 | 2013-11-27 | 北京京东方光电科技有限公司 | Array substrate, method for manufacturing same and display device |
| CN103413783B (en) * | 2013-07-31 | 2016-02-24 | 北京京东方光电科技有限公司 | Array base palte and preparation method thereof, display unit |
| US9496294B2 (en) | 2013-07-31 | 2016-11-15 | Boe Technology Group Co., Ltd. | Array substrate, manufacturing method and display device |
| CN107209451A (en) * | 2015-02-03 | 2017-09-26 | Asml荷兰有限公司 | Mask assembly and associated method |
| US11029595B2 (en) | 2015-02-03 | 2021-06-08 | Asml Netherlands B.V. | Mask assembly and associated methods |
| US11086213B2 (en) | 2015-02-03 | 2021-08-10 | Asml Netherlands B.V. | Mask assembly and associated methods |
| US11635681B2 (en) | 2015-02-03 | 2023-04-25 | Asml Netherlands B.V. | Mask assembly and associated methods |
| CN105892224A (en) * | 2016-06-24 | 2016-08-24 | 上海华虹宏力半导体制造有限公司 | Method for detecting quality of mask |
| CN112648920A (en) * | 2019-10-12 | 2021-04-13 | 上海微电子装备（集团）股份有限公司 | Mask opening size measuring method, mask plate stretching device and screen expanding machine |
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