CN102539448A - Development residue detecting method - Google Patents
Development residue detecting method Download PDFInfo
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- CN102539448A CN102539448A CN2010105781146A CN201010578114A CN102539448A CN 102539448 A CN102539448 A CN 102539448A CN 2010105781146 A CN2010105781146 A CN 2010105781146A CN 201010578114 A CN201010578114 A CN 201010578114A CN 102539448 A CN102539448 A CN 102539448A
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- inoranic membrane
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Abstract
The invention provides a development residue detecting method. The method comprises the following steps of: firstly providing a wafer coated with photoresist; then, developing the wafer; then, etching the developed wafer for removing the photoresist; and carrying out defect detection on the wafer, wherein the defect detection comprises the following two steps: depositing a layer of inorganic film on the wafer and then detecting the inorganic film by using an optical microscope. Compared with the prior art, the development residue detecting method has the beneficial effects that since a layer of inorganic film is deposited on the etched wafer without the photoresist, defect residues are amplified and can be found easily under the optical microscope in the defect detection.
Description
[technical field]
The present invention relates to a kind of development method for detecting residue, relate in particular to the method for the detection developing defect in a kind of SIC (semiconductor integrated circuit) making technology.
[background technology]
Photoetching, development, etching etc. are the important process in the SIC (semiconductor integrated circuit), also are than the operation that is easier to occur defective in the integrated circuit manufacture process process.Because the defective that each processing step adds up will finally influence the yield rate of product, therefore reducing defective is a daily groundwork, and still, the prerequisite that reduces defective is to set up the effective detection method of a cover, effectively to detect defective.Whether existing defect inspection is to utilize the contrast of repetitive pattern on the optical microscope comparison disk to discern, if defectiveness exists, the contrast of specific region image is just different with other normal figure, be defective through fixed point inspection affirmation.Because the restriction of optical microscope resolution, too little defective can't be differentiated, and causes defective in time not come to light.
Photoetching development is residual to be a kind of defective common in the photoetching process; But under existing operator scheme; In the defect inspection and the defect inspection after the etching of the photoetching level of part technology after conventional photoetching; Still can not detect developing defect with optical microscope, cause the defective can not be by timely discovery.In active area/polycrystalline grid photoetching process in complementary metal oxide semiconductor (CMOS) (CMOS:Complementary Metal Oxide Semiconductor) manufacturing process, this can't detected defective especially many, and also active area/polycrystalline grid photoetching is the critical process during the CMOS integrated circuit is produced; Therefore defect concentration will directly have influence on the yield rate of product, for example, please join shown in Figure 1; After to the disk photoetching development; The part photoresist can remain on active area/polycrystalline grid aspect, please join shown in Fig. 1 (A), at this moment; Though it is residual that etching technics subsequently can be disposed these photoresists to significant effective; But, also might only make less thick, the size decreases of active area/polycrystalline grid layer, cause the part figure not to be etched and stay tiny vestiges on the disk; Please join shown in Fig. 1 (B), these tiny vestiges more are difficult to come to light.
In view of the above problems, the present invention has set up a kind of new detection method, can timely and effectively find defective later in etching.
[summary of the invention]
The technical matters that the present invention solved is to provide a kind of development method for detecting residue, and it can detect disk surfaces simply and easily because of the residual defective that causes of developing.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of development method for detecting residue, its comprise the steps: at first to provide one be coated with photoresist disk; Again said disk is developed; Then, the disk after developing is carried out the etching processing of removing photoresist; Subsequently said disk is carried out defect inspection, said defect inspection comprises following two steps: on disk, precipitate one deck inoranic membrane earlier, utilize the light microscopy inoranic membrane then.
Further, the thickness of said inoranic membrane is 0.02 micron to 0.2 micron.
Further, said inoranic membrane is silicon dioxide or silicon nitride.
Compared to prior art, development method for detecting residue of the present invention makes the residual place of defective be exaggerated through the deposition of the disk surfaces after removing photoresist in etching one deck inoranic membrane, comes to light more easily when under optical microscope, carrying out defects detection.
[description of drawings]
The structural representation of disk after on behalf of development and etching, Fig. 1 (A), (B) remove photoresist respectively.
To be disk of the present invention carve the synoptic diagram of glue when residual at post-develop to Fig. 2.
Fig. 3 is the synoptic diagram of disk of the present invention when photoresist is residual in etching process.
Fig. 4 is the synoptic diagram of disk of the present invention when the etching and the back defective of removing photoresist are residual.
Synoptic diagram when Fig. 5 is disk of the present invention deposition inoranic membrane.
[embodiment]
See also Fig. 1 to shown in Figure 5; The present invention provides a kind of development method for detecting residue; Be used to detect the defective that the residual photoresist of development forms after etching; This detection method mainly is to remove photoresist the back at disk surfaces deposition one deck inoranic membrane in etching, in order to amplify defective, detects to make things convenient for optical microscope.
As shown in Figure 2, disk comprises the photoresist 1, the active area photoetching silicon nitride layer 2 that is positioned at photoresist 1 below that are coated on the top layer, be positioned at the silicon dioxide layer 3 of active area photoetching silicon nitride layer 2 belows and be positioned at the silicon substrate 4 of bottom.Said disk is when the developing process, and the photoresist in the exposure region will dissolve in developer solution, and the photoresist the non-exposed area in then can be not dissolved fall, and developing afterwards, said exposure region just can show needed figure.In said developing process, the photoresist in exposure region and the non-exposed area all can have dissolving in various degree, but but contrast is big more for the dissolution velocity of two district's photoresists, and the figure contrast that obtains after the development is high more.Though the development fluid power dissolves photoresist, still have possibly have part photoresist 11,12 and thoroughly do not dissolved and remain in the exposure region, form the defective on the figure, join shown in Figure 2.
In view of above-mentioned this situation, through behind the developing process, utilize optical microscope, ESEM that disk is carried out the defect inspection first time, confirm whether figure meets the demands, if can not meet the demands, then need do over again.
After defect inspection for the first time, said disk is carried out etching technics and the technology of removing photoresist of removing photoresist successively, at this moment; 11,12 residual of photoresists of said development back can become littler in the etching and the process of removing photoresist or disappear; And active area photoetching silicon nitride layer 2 also will be removed, and please join Fig. 3, shown in Figure 4, but some bigger photoresist residual 11 has just diminished after etching but can not disappear; Cause some the active area photoetching silicon nitride layer 2 of back that removes photoresist left behind; These tiny residual 13 finally can residue on the silicon dioxide layer 3, cause defective still to exist, and influence the quality of figure.
Given this, above-mentioned defective is carried out the defect inspection second time, on said silicon dioxide layer 3, precipitate one deck inoranic membrane 14 before the inspection earlier; Please join shown in Figure 5ly, and because the existence of defective 13, said inoranic membrane 14 becomes big at defective 13 places with thickening; Become a bigger graininess defective; So, the residual defects 13 that is equivalent on the said silicon dioxide layer 3 has been exaggerated under the effect of this layer inoranic membrane 14, makes under optical microscope, can differentiated and detect easily.The thickness of said inoranic membrane 14 is generally 0.02 micron to 0.2 micron, and the kind of inoranic membrane 14 can be silicon dioxide or silicon nitride etc.
Compared to prior art; Defect inspection method of the present invention is after etching is removed photoresist; Again deposit one deck inoranic membrane again, and originally residually become big just as seed causes the inoranic membrane thickening of this new deposit in residual place, become a bigger graininess defective with kernel (promptly residual); So, under optical microscope, just can be differentiated and detected at an easy rate.
The above only is a most preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art are not breaking away under the technical scheme scope situation of the present invention, utilize the method content of above-mentioned announcement that technical scheme of the present invention is made many possible changes and modification, all belong to the scope of claims protection.
Claims (3)
1. development method for detecting residue, its comprise the steps: at first to provide one be coated with photoresist disk; Again said disk is developed; Then, the disk after developing is carried out the etching processing of removing photoresist; Subsequently said disk is carried out defect inspection, it is characterized in that: said defect inspection comprises following two steps: on disk, precipitate one deck inoranic membrane earlier, utilize the light microscopy inoranic membrane then.
2. development method for detecting residue as claimed in claim 1 is characterized in that: the thickness of said inoranic membrane is 0.02 micron to 0.2 micron.
3. the development method for detecting residue described in claim 2, it is characterized in that: said inoranic membrane is silicon dioxide or silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105781146A CN102539448A (en) | 2010-12-08 | 2010-12-08 | Development residue detecting method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105781146A CN102539448A (en) | 2010-12-08 | 2010-12-08 | Development residue detecting method |
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| CN102539448A true CN102539448A (en) | 2012-07-04 |
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| CN2010105781146A Pending CN102539448A (en) | 2010-12-08 | 2010-12-08 | Development residue detecting method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681392A (en) * | 2012-09-06 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | Mechanical scratch detection method |
| CN106571315A (en) * | 2016-11-16 | 2017-04-19 | 上海华力微电子有限公司 | Method for detecting quality of photoresist |
| CN107785282A (en) * | 2016-08-30 | 2018-03-09 | 无锡华润上华科技有限公司 | Detection method, the semiconductor devices preparation method of photoetching residue |
| CN107993924A (en) * | 2017-11-23 | 2018-05-04 | 上海华力微电子有限公司 | The method of residual defects after removal photoresist developing |
| CN108122803A (en) * | 2017-12-13 | 2018-06-05 | 上海华虹宏力半导体制造有限公司 | A kind of definite method of the attribute of film defects |
| CN110473798A (en) * | 2019-08-19 | 2019-11-19 | 上海华力微电子有限公司 | A kind of crystal column surface super-small defect inspection method |
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| US6825119B1 (en) * | 2003-08-28 | 2004-11-30 | Powerchip Semiconductor Corp. | Method of piping defect detection |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681392A (en) * | 2012-09-06 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | Mechanical scratch detection method |
| CN103681392B (en) * | 2012-09-06 | 2016-05-04 | 中芯国际集成电路制造(上海)有限公司 | The method that mechanicalness scratch detects |
| CN107785282A (en) * | 2016-08-30 | 2018-03-09 | 无锡华润上华科技有限公司 | Detection method, the semiconductor devices preparation method of photoetching residue |
| CN106571315A (en) * | 2016-11-16 | 2017-04-19 | 上海华力微电子有限公司 | Method for detecting quality of photoresist |
| CN107993924A (en) * | 2017-11-23 | 2018-05-04 | 上海华力微电子有限公司 | The method of residual defects after removal photoresist developing |
| CN108122803A (en) * | 2017-12-13 | 2018-06-05 | 上海华虹宏力半导体制造有限公司 | A kind of definite method of the attribute of film defects |
| CN110473798A (en) * | 2019-08-19 | 2019-11-19 | 上海华力微电子有限公司 | A kind of crystal column surface super-small defect inspection method |
| US11121045B2 (en) | 2019-08-19 | 2021-09-14 | Shanghai Huali Microelectronics Corporation | Method for detecting ultra-small defect on wafer surface |
| CN110473798B (en) * | 2019-08-19 | 2021-10-19 | 上海华力微电子有限公司 | Method for detecting ultra-small-size defects on wafer surface |
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Application publication date: 20120704 |