CN101998770B - Method for manufacturing etched film resistance circuit board - Google Patents
Method for manufacturing etched film resistance circuit board Download PDFInfo
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- CN101998770B CN101998770B CN2009101631132A CN200910163113A CN101998770B CN 101998770 B CN101998770 B CN 101998770B CN 2009101631132 A CN2009101631132 A CN 2009101631132A CN 200910163113 A CN200910163113 A CN 200910163113A CN 101998770 B CN101998770 B CN 101998770B
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Abstract
The invention discloses a method for manufacturing an etched film resistance circuit board, which comprises the following steps of: providing a substrate stacked with a metal layer and a resistance material; forming a first photoresist of a first predetermined pattern on the metal layer; performing first etching to pattern the metal layer and expose the resistance material corresponding to a part of first width; removing the first photoresist; forming a second photoresist of a second predetermined pattern; performing second etching to pattern the metal layer and the resistance material and remove the first width resistance material exposed by the first etching to a second width; and removing the second photoresist to form a circuit board with resistance.
Description
Technical field
The present invention relates to a kind of etch thin film resistance circuit board manufacturing method, relate in particular to a kind of manufacture method that can form correct resistance size.
Background technology
See also Fig. 3; Be document " the embedded resistance of film (Thin Film Embedded Resistors) "; The author builds great waves and Xi Di Louth but (Jiangtao Wang and Sid Clouser) for the king; (Gould Electronics Inc, a kind of etch thin film resistance of US) being put down in writing is made schematic flow sheet for U.S. Gu Erde electronics corporation.Shown in Fig. 3 A to Fig. 3 G; Formation one earlier has the substrate A of a resistance material B and a metal level C; Go up the first photoresistance D that forms a reservation shape in this metal level C again; This first photoresistance D width W is the preset width of resistance, removes metal level C and resistance material B beyond this first photoresistance D covering scope with etching again, removes the first photoresistance D.Go up the second photoresistance E that formation one has the E1 that windows in metal level C; This E1 length L of windowing is the predetermined length of resistance; With etching remove window below the E1 the metal level C of corresponding scope; To expose resistance material B corresponding to the E1 position of windowing, remove the second photoresistance E, just form circuit board G with resistance F.
In the manufacturing process; When metal level C beyond the etching first photoresistance D institute covering scope and resistance material B, owing to need the metal level and the resistance material of etching phase storehouse, etched thickness is thicker; The resistance material etching that often causes lower floor not to the utmost; In the residual sufficient problem of convenient contiguously generation of resistance material border and substrate, follow-up need are added etching manufacturing process one, can this residual foot be removed as possible.
In addition; See also Fig. 3 E, overlooked by second photoresistance, the width of beneath metal level is between the central authorities of windowing; Therefore during etch metal layers; Except etching away corresponding to the metal level of the position of windowing, etching solution also can infiltrate into the gap between metal level C and the second photoresistance E and the resistance material B, causes each corner of its position of windowing of metal level C after being etched to be etched into circular-arc.More than two kinds of problems, can cause the wayward shortcoming that molds correct resistance size.
Therefore how make in the flow process carrying out etch thin film resistance, avoid residual sufficient problem and avoid the metal level corner to form circular-arc, and obtain correct resistance size, become the problem that present industry is demanded urgently overcoming in fact.
Summary of the invention
Because the disadvantages of prior art, main purpose of the present invention is to provide a kind of etch thin film resistance circuit board manufacturing method, makes in the flow process the residual sufficient problem of the resistance that is run into to solve in the prior art carrying out etch thin film resistance.
For reaching above-mentioned purpose, the present invention provides a kind of etch thin film resistance circuit board manufacturing method, comprises the following steps:
(1) provide a storehouse that the substrate of one metal level and a resistance material is arranged;
(2) first photoresistance of formation one first preset pattern on this metal level;
(3) carry out the first road etching,, the part of corresponding one first width of resistance material is exposed with this metal level of one patterned;
(4) remove first photoresistance;
(5) second photoresistance of formation one second preset pattern;
(6) carry out the second road etching,, the first width resistance material that is exposed because of the first road etching is removed to second width with one patterned metal level and resistance material;
(7) remove second photoresistance; The circuit board that has resistance with formation.
Manufacture method of the present invention is compared to existing manufacturing process; Because the first road etched thickness does not comprise resistive layer thickness; At the beginning metal level and the together etched thickness of resistance material also to be approached than prior art, make the resistive layer edge that is not covered on the film resistor circuit board utilize manufacture method of the present invention to accomplish that the etching residual sufficient problem of material that has a resistance not to the utmost can not take place by metal level.
In addition, under preferred embodiment of the present invention, when carrying out the first road etching; Though etching solution also can infiltrate into the gap between metal level and first photoresistance and the resistance material, it is circular-arc to cause each corner of metal level after being etched to be etched into, because the second follow-up photoresistance is obscured in the mid portion of the first width resistance material; Therefore during the second road etching; Etching solution can remove metal level and resistance material along the smooth border of second photoresistance, makes the first width resistance material be removed to second width in this stage; Promptly removed each circular-arc corner, and the resistance that obtains having integral edge.
Description of drawings
Fig. 1 is the specific embodiment description of flow diagram of etch thin film resistance circuit plate manufacturing process of the present invention.
Fig. 2 A to Fig. 2 G is the state diagram that flow process respectively is described in the displayed map 1.
Fig. 3 A to Fig. 3 G is that existing a kind of etch thin film resistance is made schematic flow sheet.
Embodiment
Those skilled in the art below cooperate Figure of description that execution mode of the present invention is done more detailed explanation, so that can implement after studying this specification carefully according to this.
See also Fig. 1, be the specific embodiment description of flow diagram of etch thin film resistance circuit plate manufacturing process 100 of the present invention.Fig. 2 A to Fig. 2 G is for respectively explaining the state diagram of flow process in the displayed map 1.Shown in step 110 and Fig. 2 A, a substrate 1 is provided at first; This substrate 1 can be the two-sided double sided board that all can execute work, or with this double sided board be core and externally storehouse dielectric layer, circuit, the isostructural multi-layer sheet of conductive layer are arranged; The embodiment of the invention is at least one storehouse one resistance material 2 and the metal level 3 at substrate 1.Wherein this resistance material 2 can be nickel chromium triangle (NiCr), nickel chromium triangle aluminium silicon (NiCrAlSi), nickel phosphorus (NiP) or chrome-silicon oxygen resistance alloys such as (CrSiO); This metal level can be metals such as copper, nickel or gold.Continue shown in step 120 and Fig. 2 B; On this metal level 3 with little shadow technology (comprise photoresist coating, roasting, exposure in advance, develop, hard roasting; Because little shadow technology is a prior art; Hold and not specify) form first photoresistance 4 of one first preset pattern, this first preset pattern has defined the length of last formed resistance.Continue shown in step 130 and Fig. 2 C, carry out the first road etching, with this metal level 3 of one patterned, the part of resistance material 2 corresponding one first width W 1 is exposed, wherein first width W 1 is greater than the width of last formed resistance.The present invention does not limit etching mode, can be wet etching or dry ecthing.Continue shown in step 140 and Fig. 2 D, remove first photoresistance; The mode of exposure capable of using, development or chemical stripping removes first photoresistance.Continue shown in step 150 and Fig. 2 E; On the resistance material 2 of metal level partly 3 and part, impose little shadow manufacturing process; Form second photoresistance 5 of one second preset pattern; This second preset pattern has defined the width of last formed resistance, and second photoresistance 5 covers the core at the first width resistance material.Continue shown in step 160 and Fig. 2 F, carry out the second road etching, with one patterned metal level 3 and resistance material 2, the first width resistance material that is exposed because of the first road etching is removed to second width W 2, wherein second width W 2 is the last width of resistance.Continue shown in step 170 and Fig. 2 G, the mode of exposure capable of using, development or chemical stripping removes second photoresistance, just form the circuit board 7 with resistance 6.
The manufacture method of present embodiment, because the first road etched thickness only comprises metal layer thickness, the resistance material of etching simultaneously not, etched thickness is thinner, is difficult for taking place the etching residual sufficient problem of material that has a resistance not to the utmost.
In addition, present embodiment is when the first road etching, though etching solution also can infiltrate into the gap between metal level and first photoresistance and the resistance material; Cause each corner of metal level after being etched to be etched into circular-arc; But because the second follow-up photoresistance is obscured in the middle part of the first width resistance material, therefore during the second road etching, etching solution can be along the smooth border of second photoresistance; Remove metal level and resistance material; Make the first width resistance material be removed to second width, promptly removed each circular-arc corner in this stage, and the resistance that obtains having integral edge; So the manufacture method of present embodiment may be controlled to type and goes out correct resistance size, promptly refer to the resistive layer size that is not covered by metal level.
The above is merely in order to explain preferred embodiment of the present invention; Be not that attempt is done any pro forma restriction to the present invention according to this; Therefore, all have in that identical creation spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (9)
1. an etch thin film resistance circuit board manufacturing method is characterized in that, comprises the following steps:
(1) provide a storehouse that the substrate of one metal level and a resistance material is arranged;
(2) first photoresistance of formation one first preset pattern on this metal level;
(3) carry out the first road etching,, the part of corresponding one first width of this resistance material is exposed with the said metal level of one patterned;
(4) remove this first photoresistance;
(5) second photoresistance of formation one second preset pattern;
(6) carry out the second road etching,, the first width resistance material that is exposed because of the first road etching is removed to second width with one patterned metal level and resistance material; And
(7) remove second photoresistance, form circuit board with resistance.
2. etch thin film resistance circuit board manufacturing method as claimed in claim 1 is characterized in that said substrate is a double sided board.
3. etch thin film resistance circuit board manufacturing method as claimed in claim 2 is characterized in that said manufacture method is implemented at least one surface of said substrate.
4. etch thin film resistance circuit board manufacturing method as claimed in claim 1 is characterized in that said substrate is a multi-layer sheet.
5. etch thin film resistance circuit board manufacturing method as claimed in claim 1 is characterized in that said resistance material is a resistance alloys.
6. etch thin film resistance circuit board manufacturing method as claimed in claim 1 is characterized in that, said first photoresistance and said second photoresistance are to be formed by little shadow technology.
7. etch thin film resistance circuit board manufacturing method as claimed in claim 1 is characterized in that, said second photoresistance in the said step (5) covers the core on the first width resistance material.
8. etch thin film resistance circuit board manufacturing method as claimed in claim 1 is characterized in that, the length of this resistance of first preset pattern definition of said first photoresistance.
9. etch thin film resistance circuit board manufacturing method as claimed in claim 1 is characterized in that second width of said second photoresistance is the width of resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101631132A CN101998770B (en) | 2009-08-17 | 2009-08-17 | Method for manufacturing etched film resistance circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101631132A CN101998770B (en) | 2009-08-17 | 2009-08-17 | Method for manufacturing etched film resistance circuit board |
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| Publication Number | Publication Date |
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| CN101998770A CN101998770A (en) | 2011-03-30 |
| CN101998770B true CN101998770B (en) | 2012-07-25 |
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| CN2009101631132A Active CN101998770B (en) | 2009-08-17 | 2009-08-17 | Method for manufacturing etched film resistance circuit board |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103079354B (en) * | 2012-11-08 | 2015-08-26 | 东莞生益电子有限公司 | Improve the method for buried resistor printed wiring board resistance value precision |
| CN103906364B (en) * | 2012-12-25 | 2017-07-14 | 上海美维科技有限公司 | A kind of processing method of buried resistor in printed circuit board |
| CN104902690B (en) * | 2015-05-26 | 2017-12-15 | 广州杰赛科技股份有限公司 | A kind of preparation method of circuit board |
| US9681536B1 (en) | 2016-08-28 | 2017-06-13 | Unimicron Technology Corp. | Package substrate and method for fabricating the same |
| CN110660551B (en) * | 2019-09-20 | 2021-03-02 | 丽智电子（南通）有限公司 | Method for manufacturing alloy plate metal resistor for electronic product |
| CN112186103B (en) * | 2020-10-12 | 2024-03-19 | 北京飞宇微电子电路有限责任公司 | Resistor structure and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1139353A2 (en) * | 2000-03-30 | 2001-10-04 | Victor Company Of Japan, Ltd. | Production method of thin film resistance element formed on printed circuit board, and thin film resistance element employing the method |
| CN1444433A (en) * | 2002-03-13 | 2003-09-24 | 华通电脑股份有限公司 | Production method of printed circuit borad with built-in resistor |
| CN1536952A (en) * | 2003-04-04 | 2004-10-13 | 株式会社电装 | Multilayer printed circuit board and mfg. method thereof |
| CN1750739A (en) * | 2004-09-16 | 2006-03-22 | 健鼎科技股份有限公司 | Method for producing thin film resistor on printed circuit board |
-
2009
- 2009-08-17 CN CN2009101631132A patent/CN101998770B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1139353A2 (en) * | 2000-03-30 | 2001-10-04 | Victor Company Of Japan, Ltd. | Production method of thin film resistance element formed on printed circuit board, and thin film resistance element employing the method |
| CN1444433A (en) * | 2002-03-13 | 2003-09-24 | 华通电脑股份有限公司 | Production method of printed circuit borad with built-in resistor |
| CN1536952A (en) * | 2003-04-04 | 2004-10-13 | 株式会社电装 | Multilayer printed circuit board and mfg. method thereof |
| CN1750739A (en) * | 2004-09-16 | 2006-03-22 | 健鼎科技股份有限公司 | Method for producing thin film resistor on printed circuit board |
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| CN101998770A (en) | 2011-03-30 |
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