CN101995617B - Optical transmission/reception module made of silicon-based materials - Google Patents
Optical transmission/reception module made of silicon-based materials Download PDFInfo
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- CN101995617B CN101995617B CN2009100913998A CN200910091399A CN101995617B CN 101995617 B CN101995617 B CN 101995617B CN 2009100913998 A CN2009100913998 A CN 2009100913998A CN 200910091399 A CN200910091399 A CN 200910091399A CN 101995617 B CN101995617 B CN 101995617B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 132
- 230000005540 biological transmission Effects 0.000 title claims abstract description 11
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 6
- 239000013307 optical fiber Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000007493 shaping process Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
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- 238000010327 methods by industry Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000010355 oscillation Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
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Abstract
The invention relates to the field of optical interconnection technique and discloses an optical transmission/reception module made of silicon-based materials. The optical transmission/reception module made of silicon-based materials comprises an optical transmission part and an optical reception part, wherein the optical transmission part comprises an optical modulator, a first optical coupler, a second optical coupler, a first optical waveguide, a second optical waveguide and an optical modulator matching network; and the optical reception part comprises a photoelectric detector, a third optical coupler, a third optical waveguide and a photoelectric detector matching network. An external optical signal is coupled into the first optical waveguide by the first optical coupler and then input to the optical modulator; electric information is loaded to the optical modulator through the optical modulator matching network and is converted into optical information by the optical modulator and then enters the second optical coupler through the second optical waveguide so as to be coupled into an optical fiber for transmission; the optical information in the optical fiber is coupled into the third optical waveguide by the third optical coupler; and the converted electric signal is output through the photoelectric detector matching network. Made of the silicon-based materials, the optical transmission/reception module can be highly integrated and miniaturized, and is suitable for the application of inter-chip and in-chip optical interconnection.
Description
Technical field
The present invention relates to the light field of interconnect technologies, especially a kind of whole silica-based material optical transceiver module.
Background technology
The most potential replacement scheme of problems such as it is slow that the light interconnection is considered to solve electrical interconnection speed, and power consumption is high, and it is serious to crosstalk also has important use simultaneously in optical fiber communication and medium and long distance interconnection.The light interconnection is compared with the metal interconnected of routine, has remarkable potential advantages, and these advantages are based on the light physical differences intrinsic with electricity.Light signal and electric signal all are electromagnetic waves, and difference is their oscillation frequency f, and its frequency is about 10 respectively concerning light wave and electric wave
14≤f
Light≤10
15And f
≤10
11Hz.Typical light frequency is at least than big 3 one magnitude of signal bandwidth.This means that modulated light wave has huge processing power to signal bandwidth.Big light frequency has the ability that produces short pulse, and short pulse has crucial effects to eliminating clock skew.Simultaneously, the trimmed book body also is good voltage isolator, and is also significant to reducing device power consumption.Present light interconnecting modules all is applied to medium and long distance interconnection and plate-board communications basically, adopts vertical cavity surface emitting laser (VCSEL) and photodetector to constitute.Yet; Along with reaching the growth of IC interior between the integrated circuit to interconnection needs; The shortcoming of such scheme is also fairly obvious, mainly is the thermal stability extreme difference of VCSEL under the hot environment of IC interior, and employed material is also incompatible with the material of silicon integrated circuit simultaneously; Can not adopt microelectronic technique to produce in batches, cost is high.
Summary of the invention
The technical matters that (one) will solve
In view of this, fundamental purpose of the present invention is to propose a kind of whole silica-based material optical transceiver module, has with microelectronic technique compatible; Can produce in batches; Low cost of manufacture, steady operation and other merits is particularly suitable between integrated circuit and the light of IC interior interconnects.
(2) technical scheme
For achieving the above object, the invention provides a kind of whole silica-based material optical transceiver module, this module comprises light radiating portion 1 and light receiving part 2, wherein:
Light radiating portion 1 comprises:
Be connected in first photo-coupler 102 of photomodulator 101 through first optical waveguide 104;
Be connected in second photo-coupler 103 of photomodulator 101 through second optical waveguide 105;
And
Be connected in the photomodulator matching network 106 of photomodulator 101;
Light receiving part 2 comprises:
The 3rd photo-coupler 202;
Photodetector 201; And
The 3rd photo-coupler 202, photodetector 201 are connected with photodetector matching network 204 successively, and the 3rd photo-coupler 202 is connected in photodetector 201 through the 3rd optical waveguide 203;
Wherein, At light radiating portion 1, the first photo-coupler 102 external optical signals being coupled into first optical waveguide, 104, the first optical waveguides 104 links to each other with photomodulator 101 input ends; Electrical information is loaded on photomodulator 101 through photomodulator matching network 106; Photomodulator 101 is converted into optical information with electrical information, and transmits through second optical waveguide 105, and the optical information in second optical waveguide 105 is coupled into optical fiber through second photo-coupler 103 and transmits; At light receiving part 2, the three photo-couplers 202 optical information in the optical fiber is coupled into the 3rd optical waveguide 203, the three optical waveguides 203 and links to each other with photodetector 201, the electric signal after the conversion is through 204 outputs of photodetector matching network.
In the such scheme, said silica-base material is the silicon SOI material on the insulator, or the body silicon materials, or the compound semiconductor materials on the silicon substrate.
In the such scheme; Said photomodulator 101 is electrooptic modulators, or hot photomodulator, or the micromechanics modulator; Be used to accomplish the conversion of electrical information and optical information; Under the effect of electrical information, the light of importing via optical waveguide is modulated, thereby electrical information is converted into optical information, and transmit through optical waveguide at the output terminal of photomodulator 101.
In the such scheme, said first photo-coupler 102, second photo-coupler 103 or the 3rd photo-coupler 202 are grating couplers, or taper coupler, or the micro mirror coupling mechanism, are used for light with optical fiber and efficiently are coupled in the optical waveguide and transmit.
In the such scheme, said first optical waveguide 104, second optical waveguide 105 or the 3rd optical waveguide 203 are the semiconductor material optical waveguides on the silicon substrate, or silicon optical waveguide, or polymer optical wave guide.
In the such scheme, said photomodulator matching network 106 is used for accomplishing the impedance matching and the input signal shaping of photomodulator 101 and extraneous electrical transmission network as the interface of photomodulator 101 with the electricity drive signal.
In the such scheme, said photodetector 201 is silicon detectors, or compound semiconductor detector, is used for converting optical information into electrical information again, through 204 outputs of photodetector matching network.
(3) beneficial effect
Whole silica-based material optical transceiver module of the present invention is given full play to the microelectronic process engineering maturation, can be produced low cost of manufacture in batches on the silicon platform; Steady operation and other merits; On silicon optical bench, adopt the CMOS integrated technique, elements such as disposable preparation photo-coupler, photomodulator, optical waveguide, photomodulator and photodetector matching network, photo-detector; Integrated level is high, is suitable for reaching between integrated circuit the light interconnection of IC interior.
Description of drawings
For further specifying content of the present invention and characteristics, below in conjunction with accompanying drawing and embodiment the present invention is done a detailed description, wherein:
Fig. 1 is the block scheme of whole silica-based material optical transceiver module provided by the invention.
Fig. 2 is the principle schematic of one embodiment of the invention.
Fig. 3 is the principle schematic that the present invention is applied to interconnect between integrated circuit.
Fig. 4 is the synoptic diagram that the present invention is applied to the IC interior interconnection.
Description of reference numerals:
Light radiating portion 1
Light receiving part 2
First photo-coupler 102
Second photo-coupler 103
First optical waveguide 104
Second optical waveguide 105
Photodetector 201
The 3rd photo-coupler 202
The 3rd optical waveguide 203
Photodetector matching network 204
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
As shown in Figure 1; Whole silica-based material optical transceiver module provided by the invention comprises light radiating portion 1 and light receiving part 2; Wherein light radiating portion 1 comprises photomodulator 101, first photo-coupler 102, second photo-coupler 103, first optical waveguide 104, second optical waveguide 105, and photomodulator matching network 106; Light receiving part 2 comprises photodetector 201, the 3rd photo-coupler 202, the 3rd optical waveguide 203 and photodetector matching network 204.
At the light radiating portion, utilize a constant laser instrument or light-emitting diode optical device as external optical signals, this flashlight is connected to the input end of first photo-coupler 102 through optical fibre channel; First photo-coupler 102 is grating coupler, taper coupler or micro mirror coupling mechanism, and its effect is the light in the optical fiber efficiently to be coupled in the optical waveguide transmit.Electrical information is loaded on photomodulator 101 through photomodulator matching network 106; The main effect of photomodulator matching network 106 is as the interface of photomodulator 101 with the electricity drive signal, accomplishes the impedance matching and the input signal shaping of photomodulator 101 and extraneous electrical transmission network.Photomodulator 101 can be the electric light of silicon or silica-base material, hot light, micromechanics modulator, and it mainly acts on is the conversion of accomplishing electrical information and optical information.Photomodulator 101 will be modulated the light of importing via optical waveguide under the effect of electrical information, thereby electrical information is converted into optical information, and transmit through optical waveguide at the output terminal of photomodulator 101.The optical information of the optical modulation of process in the optical waveguide is coupled into optical fiber through second photo-coupler 103 again and transmits.
At light receiving part 2; The 3rd photo-coupler 202 is coupled into the 3rd optical waveguide 203 with the optical information in the optical fiber; The 3rd optical waveguide 203 links to each other with photodetector 201, and photodetector 201 can be compound semiconductor materials detectors such as other materials such as SiGe on silicon PIN structured light electric explorer or the silicon substrate structure, Ge, InP, GaAS.Photodetector 201 converts optical information into electrical information again, through 204 outputs of photodetector matching network, carries out the processing of electric signal.
Fig. 2 has provided a kind of embodiment of whole silica-based material optical transceiver module shown in Figure 1, is the total silicon optical transceiver module on a kind of SOI material.Among the figure, at the light radiating portion, utilize a constant laser instrument as external optical signals, this flashlight is connected to the input end of photo-coupler through optical fibre channel; Photo-coupler is the SOI grating coupler, and its effect is the light in the optical fiber efficiently to be coupled in the SOI sub-micron optical waveguide transmit; Modulator is a SOI Mach-Zehnder structure electrooptic modulator; Electrical information is loaded on the SOI electrooptic modulator through the photomodulator matching network; SOI electrooptic modulator matching network has impedance matching network and filter network to constitute, with the impedance matching and the input signal shaping of extraneous electrical transmission network.
Under the effect of electrical information; Because silicon charge carrier effect of dispersion; The modulation arm refractive index of SOI electrooptic modulator changes, thereby interfering output terminal to realize the modulation to light signal, electrical information is converted into optical information; And transmit through silicon sub-micron optical waveguide at the output terminal of photomodulator, be coupled into optical fiber through the SOI grating coupler and transmit.
At light receiving part, the SOI photo-coupler is coupled into optical waveguide with the optical information in the optical fiber, and photodetector is a silicon PIN structured light electric explorer, and the mode that can be through material growth or the mode of bonding realize and being connected of sub-micron waveguide.
In the present embodiment, another section manufacturing SOI silicon grating coupling mechanism that has adopted in the waveguide of SOI sub-micron, the mode through bonding realizes being connected of silicon PIN structured light electric explorer and the waveguide of SOI sub-micron then; Detector converts optical information into electrical information again, exports through the photodetector matching network.
Fig. 3 is the principle schematic that the present invention is applied to interconnect between integrated circuit.The output data of integrated circuit adopts optical fiber interconnections as the drive signal of photomodulator between two integrated circuit.
Fig. 4 is the synoptic diagram that the present invention is applied to the IC interior interconnection.Between two disparate modules of IC interior, integrated silicon-based optical transceiver module is realized the light path path through waveguide respectively; Two optical transceiver modules can integrate; Process the light transceiving chip, in like manner, can multi-purpose transceiver module be integrated preparation light transceiving chip.
In sum, whole silica-based material optical transceiver module of the present invention has the following advantages at least:
1, the technology of whole silica-based material device that optical transceiver module adopts of the present invention is all simple and be easy to realize that with low cost, qualification rate is high.
2, whole silica-based material optical transceiver module of the present invention all adopted silica-base material or with the material of silica-based process compatible, integrated level is high, is suitable for the interconnection of short distance and very short distance light.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a whole silica-based material optical transceiver module is characterized in that, this module comprises light radiating portion (1) and light receiving part (2), wherein:
Light radiating portion (1) comprising:
Photomodulator (101);
Be connected in first photo-coupler (102) of photomodulator (101) through first optical waveguide (104);
Be connected in second photo-coupler (103) of photomodulator (101) through second optical waveguide (105); And
Be connected in the photomodulator matching network (106) of photomodulator (101); Light receiving part (2) comprising:
The 3rd photo-coupler (202);
Photodetector (201); And
Photodetector matching network (204);
The 3rd photo-coupler (202), photodetector (201) and photodetector matching network (204) are connected successively, and the 3rd photo-coupler (202) is connected in photodetector (201) through the 3rd optical waveguide (203);
Wherein, In light radiating portion (1), first photo-coupler (102) is coupled into first optical waveguide (104) with external optical signals, and first optical waveguide (104) links to each other with photomodulator (101) input end; Electrical information is loaded on photomodulator (101) through photomodulator matching network (106); Photomodulator (101) is converted into optical information with electrical information, and transmits through second optical waveguide (105), and the optical information in second optical waveguide (105) is coupled into optical fiber through second photo-coupler (103) and transmits; In light receiving part (2), the 3rd photo-coupler (202) is coupled into the 3rd optical waveguide (203) with the optical information in the optical fiber, and the 3rd optical waveguide (203) links to each other with photodetector (201), and the electric signal after the conversion is through photodetector matching network (204) output;
Said photomodulator matching network (106) is used for accomplishing the impedance matching and the input signal shaping of photomodulator (101) and extraneous electrical transmission network as the interface of photomodulator (101) with the electricity drive signal.
2. whole silica-based material optical transceiver module according to claim 1 is characterized in that, said silica-base material is the silicon SOI material on the insulator, or the body silicon materials, or the compound semiconductor materials on the silicon substrate.
3. whole silica-based material optical transceiver module according to claim 1 is characterized in that, said photomodulator (101) is an electrooptic modulator; Or hot photomodulator; Or the micromechanics modulator, be used to accomplish the conversion of electrical information and optical information, under the effect of electrical information, the light of importing via optical waveguide is modulated; Thereby electrical information is converted into optical information, and transmits through optical waveguide at the output terminal of photomodulator (101).
4. whole silica-based material optical transceiver module according to claim 1; It is characterized in that; Said first photo-coupler (102), second photo-coupler (103) or the 3rd photo-coupler (202) are grating couplers; Or taper coupler, or micro mirror coupling mechanism is used for light with optical fiber and efficiently is coupled in the optical waveguide and transmits.
5. whole silica-based material optical transceiver module according to claim 1 is characterized in that, said first optical waveguide (104), second optical waveguide (105) or the 3rd optical waveguide (203) are the semiconductor material optical waveguides on the silicon substrate, or polymer optical wave guide.
6. whole silica-based material optical transceiver module according to claim 5 is characterized in that, said semiconductor material optical waveguide is a silicon optical waveguide.
7. whole silica-based material optical transceiver module according to claim 1; It is characterized in that said photodetector (201) is a silicon detector, or compound semiconductor detector; Be used for converting optical information into electrical information again, export through photodetector matching network (204).
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| CN101995617B true CN101995617B (en) | 2012-07-18 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102882601B (en) * | 2012-09-10 | 2015-04-22 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN105552501A (en) * | 2016-02-17 | 2016-05-04 | 北京艾达方武器装备技术研究所 | Electromagnetic wave interconnection device and method and application thereof |
| CN106646783A (en) * | 2017-02-14 | 2017-05-10 | 上海新微科技服务有限公司 | Silicon-based WDM optical transceiver module |
| CN113055091B (en) * | 2019-12-26 | 2024-04-19 | 中兴通讯股份有限公司 | Communication module, communication device, communication control method, and storage medium |
| CN112379479B (en) * | 2020-11-10 | 2021-12-28 | 中国科学院上海微系统与信息技术研究所 | Silicon-based optical transceiver and preparation method thereof |
| CN114660710B (en) * | 2020-12-23 | 2023-04-07 | 中国科学院半导体研究所 | Wafer level optical interconnection and switching system on chip |
| CN116299887A (en) * | 2021-12-14 | 2023-06-23 | 上海曦智科技有限公司 | Optical interconnection device, manufacturing method thereof and computing device |
| CN114755768B (en) * | 2022-03-28 | 2024-03-29 | 东南大学 | Optical transceiver module, manufacturing method thereof, preparation method of optical fiber coupling device and coupling method |
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