CN101975880B - Optical current transformer sensing head and sensing method - Google Patents
Optical current transformer sensing head and sensing method Download PDFInfo
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- CN101975880B CN101975880B CN 201010276956 CN201010276956A CN101975880B CN 101975880 B CN101975880 B CN 101975880B CN 201010276956 CN201010276956 CN 201010276956 CN 201010276956 A CN201010276956 A CN 201010276956A CN 101975880 B CN101975880 B CN 101975880B
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Abstract
The invention relates to an optical current transformer sensing head comprising an optical waveguide substrate and a magneto-optic induction membrane layer located on the optical waveguide substrate. The magneto-optic induction membrane layer is made of surface plasma excimer metal materials or surface plasma excimer metal materials and nonmagnetic dielectric materials; and the magneto-optic induction membrane layer has the nanometer structure characteristic of the surface plasma excimer metal materials. The current sensing method adopts the interaction of p-polarized light and the surface plasma excimer metal materials with the nanometer structure characteristic and the magneto-optic effect generated by the magneto-optic induction membrane layer under the magnetic field, thereby the characteristics parameters of the optical wave incoming on the magneto-optic induction membrane layer by the optical waveguide substrate is modulated by the outside current magnetic field variation, and the detection optical wave can realize optical sensing of the current through the fore-and-aft intensity, polarization state, phase or wavelength variation of the sensing head.
Description
Technical field
The present invention relates to the optical current mutual inductor field, particularly a kind of optical current sensing head and method for sensing thereof.
Background technology
Along with improving constantly of line voltage grade in the electric system, capacity constantly increases, and current transformer is had higher requirement.Traditional electromagnetic current transducer has exposed serious defective gradually, mainly comprise: (1) when system is short-circuited, when current anomaly increases, mutual inductor is unshakable in one's determination saturated serious, it is limited that it measures dynamic range, and transient performance worsens, make secondary current can not correctly reflect primary current, cause relay protection tripping or malfunction; (2) transient signal and harmonic measure ability, its linearity and dynamic perfromance all can not satisfy the requirement of quick failure response; (3) along with the raising of electric pressure, rely on oil-insulation, gas isolated insulation system to become increasingly complex, cost height, Heavy Weight, volume is big and explosion danger is arranged; (4) can not directly provide digital signal, incompatibility electric-power metering and the demand for development of protecting digital informationization.Given this, the better electronic current mutual inductor of transient performance and insulating property becomes the emphasis that further develops.
At present, electronic current mutual inductor mainly is divided into two big classes: optical current mutual inductor and hollow coil current transformer (claiming Rogowski coil type current transformer again).Comparatively speaking, the latter's degree of being practical is higher at present, but still exists a lot of difficult problems to overcome.The sensing head of hollow coil current transformer often evenly is wound on the ring skeleton by enameled wire, and skeleton adopts nonferromagnetic materials such as plastics or pottery, and its relative permeability is identical with airborne relative permeability.Hollow coil current transformer is subject to outside electromagnetic interference owing to be not with iron core; Its coil winding shape and technological requirement are very high, and the temperature stability of coil rack is not high, especially take place under the situation of distortion at current waveform, and its accuracy of measurement is not high enough; Its output signal is the differential of tested electric current, and the analog-and digital-integrating circuit that utilizes can't be realized accurate integrating function in broadband at present, has limited its transient performance; Because its high-side signal treatment circuit needs power supply reliably and with long-term, stablizing energy supply design and low power dissipation design is its difficult point and key of development at present, has also limited its insulating property simultaneously.Though occurred the printed circuit board air core coil in recent years, improved precision and the dirigibility of wiring, and the temperature stability of coil rack, as active electronic transformer, need introduce power supply and ground in the high-pressure side, make whole device very complicated.So using the ideal form of mutual inductor in electric system should be the optical current mutual inductor of passive, to reduce insulating requirements greatly.
At present, the kind of optical current mutual inductor has a lot, can be divided into several big classes such as block magneto-optic memory technique type, magnetostriction materials type and full fiber type by the sensitive material type.Block magneto-optic memory technique comprises magneto-optic glass and magneto-optical crystal etc., can be processed into strip or uses around the closed hoop sensing head of current.Be the optics mutual inductor of sensing head for the ring-type magneto-optic glass, tested electric current passes from the hole at main body glass ring center by straight line conductor, polarized light through the repeatedly total reflection of reflecting surface around one week of conductor.The weak point of this sensing head is passing in time, and the character of reflecting surface can change, the precision of measurement and reliability worse and worse, long-time stability are bad, and difficulty of processing is big, install inconvenient.Magneto-optical crystal (be representative with the garnet crystal) also is studied the current measurement field that is applied to, but its Verdet constant temperature influence is bigger, and magnetic history has randomness, make measuring stability and precision not high, and cost is higher.Magnetostriction materials are combined with optical fiber can realize current sense, but because the restriction of the magnetic saturation of the load effect of optical fiber and magnetostriction materials coupling, magnetostriction materials itself and magnetic effect and material have all restricted the practical application of such sensing head in the optics mutual inductor to the susceptibility of environmental factors such as temperature and vibration.Full optical fiber sensor head directly is wound on optical fiber exactly and realizes current sense on the current, and light channel structure is simple.Because environmental factors such as temperature, stress can cause the birefringent random variation of inside of optical fibre, have influenced measuring accuracy and stability based on the all-fiber current transformator of Polarization Detection greatly.Though the Sagnac all-fiber current transformator based on interference detection method has obtained enough attention in recent years, the model machine of linked network trial run has also appearred, and this scheme is difficult to distinguish the optical circulator effect that caused by vibration to the influence of sensing detection.
In recent years, along with the development of function film technology, the sensing head of optical current mutual inductor is the trend of oriented filming development also.US Patent No. 0103380 discloses a kind of current sensing based on magneto-optic memory technique film and optical waveguide resonant structure.It is the magnetic field sensor of sensitive element with ferromagnetic material or ferrimagnetic material film that US Patent No. 5736856 discloses a kind of Kerr magnetooptical effect of utilizing.Chinese patent CN101672870 discloses a kind of current sensor, and its sensing unit is the stacked growth structure of protective seam, permanent magnetic thin film and magneto-optic memory technique.Chinese patent CN101672865 discloses a kind of fibre optic current sensor, scribbles the magnetostriction materials rete on the sensor fibre.But because technique scheme still is subjected to the restriction of magnetic material performance, so there are many problems in actual applications.
Along with the in-depth to microworld understanding with people that develops rapidly of nanometer technology, be that remarkable progress has been obtained in the nanophotonics field of representative with the surface plasmons.Surface plasma excimer refers to non-radiative " local " electromagnetic mode that the metal surface free electron intercouples and forms with incident photon, the metal surface free electron is collective's coherent oscillation under the excitation of incident field, luminous energy is accumulated in the spatial dimension of hundreds of nanometer on the interface of metal and medium, produce huge local electromagnetic field enhancement effect, greatly strengthened the interaction between light and the material, can significantly strengthen the magneto-optical property of metallic diaphragm, thereby strengthen its light sensing response ability of changes of magnetic field to external world.
Exciting of surface plasmons can be by total reflection phenomenon, utilize modes such as optical fiber and planar optical waveguide to realize.Except exciting the surface plasmons at metallic film list interface, by appropriate design metal and dielectric multi-layer film structure, the surface plasmons at two interfaces can be realized coupling about metallic diaphragm, be called the long-distance surface plasmon, can be implemented in the longer propagation at interface.Utilize metal micro-nanostructures such as optical grating construction, cycle nano-pore structure and nano metal particles can produce stronger local High-Field and strengthen effect, be called as the resonance of local surface plasma excimer.
Summary of the invention
It is more weak and be subject to environmental factor and disturb to the objective of the invention is to overcome the transducing signal that exists in the present optical current mutual inductor practicability, temperature stability difference and have randomness and problem such as can't effectively compensate proposes a kind of novel optical current sensing head and method for sensing thereof of the nano effect based on surface plasmons.
Optical current mutual inductor sensing head of the present invention comprises the optical waveguide substrate and is positioned at this suprabasil magneto-optic sensor film.The magneto-optic sensor film is made of the surface plasmons metal material, or is made of surface plasmons metal material and the compound institute of non magnetic dielectric material.Wherein said magneto-optic sensor film has surface plasmons metal material nanostructured feature.
The magneto-optic sensor film can constitute by one or several surface plasmons metallic material film is folded layer by layer.
The magneto-optic sensor film also can non magnetic dielectric material rete be stacked constitutes by one or several surface plasmons metal material rete and one or several.Further, the magneto-optic sensor film also can be a kind of sandwich structure, namely a surface plasmons metal material rete is clipped between two non magnetic dielectric material retes, or a non magnetic dielectric material rete is clipped between two surface plasmons metal material retes; Perhaps, the magneto-optic sensor film is made of a surface plasmons metal material rete and a non magnetic dielectric material rete, and wherein surface plasmons metal material rete is clipped between optical waveguide substrate and the non magnetic dielectric material rete.
Preferably, above-mentioned surface plasmons metal material rete has periodically or the aperiodicity nanoscale features except thicknesses of layers.
Preferably, above-mentioned surface plasmons metal material rete has nanometer grating or nanohole array periodic structure; Described surface plasmons metal material rete has island nanostructured non-periodic.
The magneto-optic sensor film can also be material dopedly to be gone into non magnetic dielectric material rete and constitute by what contain surface plasmons metal material nanostructured.
Described surface plasmons metal material is one or more among Au, Ag, Cu or the Al.
Described optical waveguide substrate utilizes total reflection phenomenon to realize the conduction of light in material, comprises optical fiber and planar optical waveguide.
Context layer in the middle of existing between described optical waveguide substrate and described magneto-optic sensor film, middle context layer can increase the firm degree that is connected between optical waveguide substrate and the described magneto-optic sensor film.
There is protective seam at described magneto-optic sensor film, to reduce the external environment factor to the influence of magneto-optic sensor film.
Described surface plasmons material nano structure feature refers to the thickness of surface plasmons metal material nanometer rete, or the particle diameter of surface plasmons metal material nano particle, or in nano composite material the nanostructured form of surface plasmons metal material.
The size of described nanostructured feature preferably in 500nm, more preferably 1-500nm, more preferably 10-100nm.
Described non magnetic dielectric material is used for the conduction of light wave and adjusts the shooting conditions of surface plasmons, to realize surveying the abundant interaction of light wave and surface plasmons material.Described non magnetic dielectric material comprises: Inorganic Non-metallic Materials, and as SiO
2Or SiN
xPolymeric material is as PMMA (polymethylmethacrylate) or SU-8 photoresist; Metal oxide materials is as TiO
2Or ZnO.
The optical current method for sensing that the present invention is based on above-mentioned sensing head is:
(1) light wave that sends of light source has p wave polarization component, or makes it have p wave polarization component by the Polarization Control device;
(2) light wave of the described p of having wave polarization component is incident on the suprabasil magneto-optic sensor film of described optical waveguide by the optical waveguide substrate of optical current mutual inductor sensing head of the present invention, interacts with surface plasmons metal material in the described magneto-optic sensor film;
(3) light wave of the described p of having wave polarization component produces in the magnetic field at extraneous electric current by described interaction and produces magneto-optic effect, and intensity, polarization state, phase place or the wavelength of described light wave are changed;
(4) by detecting described light wave by intensity, polarization state, phase place or wavelength change before and after the described magneto-optic sensor film, obtain the information of described electric current.
The invention has the beneficial effects as follows:
(1) sensitive element of sensing head of the present invention is nano thin-film, and the material range of choice is wide, the preparation simple and flexible, and the sensing head structure is convenient to be connected with existing fiber sensing technology and integrated light guide technology.
(2) method for sensing of the present invention is based on the magneto-optic effect of surface plasmon resonance enhancing, energy carrier and two kinds of functions of signal vehicle of light wave have been utilized simultaneously, overcome in the existing optical current detection scheme transducing signal weak, be subject to disturb and be difficult for problems such as compensation, can be based on multiple light wave characteristic parameter realization sensing detection.
Description of drawings
The invention will be further described below in conjunction with accompanying drawing and embodiment:
Fig. 1 is the structural representation of the embodiment 1 to 14 of sensing head of the present invention, among the figure: 1 optical fiber, 2V type raceway groove, 3 fiber cores, 4 magneto-optic sensor films;
Fig. 2 is the structural representation of the embodiment 15 to 28 of sensing head of the present invention, among the figure: 5 substrate of glass, 6 ducting layers;
Fig. 3 is the structural representation of the embodiment 29 to 42 of sensing head of the present invention, among the figure: 7 flat waveguides;
Fig. 4 is the embodiment of the present invention's employing based on the detection method of Strength Changes;
Fig. 5 adopts the embodiment of the detection method that changes based on polarization state for the present invention;
Fig. 6 adopts the embodiment of the detection method that changes based on phase place for the present invention;
Fig. 7 is the embodiment of the present invention's employing based on the detection method of wavelength variations.
Embodiment
Optical current mutual inductor sensing head of the present invention comprises the optical waveguide substrate and is positioned at this suprabasil magneto-optic sensor film.The magneto-optic sensor film is made of the surface plasmons metal material, or is made of surface plasmons metal material and the compound institute of non magnetic dielectric material.Wherein said magneto-optic sensor film has surface plasmons metal material nanostructured feature.
The surface plasmons metal material nanometer rete that is made of the surface plasmons metal material can adopt physics and chemical vapour deposition technique, epitaxial film deposition technology and the preparation of surperficial adsorption technology.The non magnetic dielectric material rete that is made of non magnetic dielectric material can adopt multiple physics and chemical vapour deposition technique preparation, also can use to get rid of film and surface absorption waits other film-forming methods preparations.
The periodicity nanoscale features structure that described surface plasmons metal material rete has except thicknesses of layers can realize by micro-nano process technologies such as photoetching, electron beam exposure and focused-ion-beam lithographies.
The aperiodicity nanoscale features that described surface plasmons metal material rete has except thicknesses of layers can realize by methods such as thermal treatment or surface nano-structure absorption.
Surface plasmons metal material nanostructured in the described non magnetic dielectric material rete can mode synthetic by original position or that ex situ is synthetic prepare.
Described surface plasmons metal material is used for producing magneto-optic effect with the incident light interaction, can be among Au, Ag, Cu or the Al one or more.
Described non magnetic dielectric material is used for the conduction of light wave and adjusts the shooting conditions of surface plasmons, and realizes surveying the abundant interaction of light wave and surface plasmons material, comprises being not limited to following material: Inorganic Non-metallic Materials, and as SiO
2Or SiN
xPolymeric material is as PMMA (polymethylmethacrylate) or SU-8 photoresist; Metal oxide materials is as TiO
2Or ZnO.
Between optical waveguide substrate and magneto-optic sensor film, there is the middle context layer that increases the degree that is connected firmly between the two, can takes any materials according to circumstances, as long as this material is little to the conduction of the light wave between optical waveguide substrate and magneto-optic sensor film influence.
There is protective seam at described magneto-optic sensor film, to reduce the external environment factor to the influence of magneto-optic sensor film, can takes any materials according to circumstances, as long as this material does not influence the magneto-optic sensor film to the response of external magnetic field.
Fig. 1 is the structural representation of the embodiment 1 to 14 of sensing head of the present invention, and as shown in Figure 1, magneto-optic sensor film 4 is on the fiber core 3 of optical fiber 1, and V-type raceway groove 2 is used for fixed fiber 1.
Embodiment 1: the optical waveguide substrate of described sensing head is silica fibre, at the suprabasil magneto-optic sensor film of the optical waveguide of the silica fibre Ag film that is thickness 50nm.The method for making of optical fiber substrate: as shown in Figure 1, optical fiber 1 is fixed in the V-type raceway groove 2, removes outside clad, expose fiber core 3, polish out a plane, at this plane preparation magneto-optic sensor film 4.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes magnetron sputtering method at the Ag film of its polished surface plating 50nm thickness after cleaning and drying, and recycling PECVD method is at the SiO of Ag film preparation thickness 5nm
2Protective seam.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 2: the optical waveguide substrate of described sensing head is silica fibre, is multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, is the thick Al film of 45nm in the optical waveguide substrate, is the thick Au film of 1nm on the Al film.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes magnetron sputtering method earlier at the Al film of its polished surface plating 45nm after cleaning and drying, plates the Au film of 1nm again at the Al film.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 3: the optical waveguide substrate of described sensing head is silica fibre, is multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, is the thick Si of 200nm in the optical waveguide substrate
3N
4Film is at Si
3N
4Being the thick Au film of 50nm on the film, is the Si of thickness 80nm at the Au film
3N
4Film.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes the PECVD method at the Si of its polished surface plating 200nm after cleaning and drying
3N
4Film utilizes magnetron sputtering method at Si
3N
4The Au film of plating 50nm on the film, recycling PECVD method is at the Si of Au film plating 80nm
3N
4Film.The incident light of certain pattern can interact with the long-distance surface plasmon of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 4: the optical waveguide substrate of described sensing head is silica fibre, is multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, is the thick SiO of 200nm in the optical waveguide substrate
2Film is at SiO
2Being the thick Au film of 10nm on the film, is the SiO of thickness 80nm at the Au film
2Film.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes the PECVD method at the SiO of its polished surface plating 200nm after cleaning and drying
2Film utilizes magnetron sputtering method at SiO
2The Au film of plating 10nm on the film, recycling PECVD method is at the SiO of Au film plating 80nm
2Film.The incident light of certain pattern can interact with the long-distance surface plasmon of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 5: the optical waveguide substrate of described sensing head is silica fibre, is multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, is the thick Ag film of 200nm in the optical waveguide substrate, is the thick SiO of 50nm on the Ag film
2Film is at SiO
2It is the Ag film of thickness 30nm on the film.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes magnetron sputtering method at the Ag film of its polished surface plating 200nm earlier after cleaning and drying, and recycling PECVD method is at the SiO of Ag film plating 50nm
2Film, the recycling magnetron sputtering method is plated in SiO
2The Ag film of plating 30nm on the film.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 6: the optical waveguide substrate of described sensing head is silica fibre, is multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, is the thick ZnO film of 50nm in the optical waveguide substrate, is the thick Au film of 50nm on ZnO film.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes mocvd method at the ZnO film of its polished surface plating 50nm after cleaning and drying, and the recycling magnetron sputtering method is at the Au film of ZnO film plating 50nm.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 7: the optical waveguide substrate of described sensing head is silica fibre, is multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, is the thick TiO of 50nm in the optical waveguide substrate
2Film is at TiO
2It is the thick Au film of 50nm on the film.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes mocvd method at the TiO of its polished surface plating 50nm after cleaning and drying
2Film, the recycling magnetron sputtering method is at TiO
2The Au film of plating 50nm on the film.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 8: the optical waveguide substrate of described sensing head is silica fibre, be multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, be the thick SU-8 film of 200nm in the optical waveguide substrate, be the thick Au film of 50nm on the island nanostructured non-periodic SU-8 film having.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate through clean and drying after, utilize and get rid of embrane method and be coated with the SU-8 film of 200nm at its polished surface, the recycling magnetron sputtering method plates the Au film of 50nm at the SU-8 film.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 9: the optical waveguide substrate of described sensing head is silica fibre, and the magneto-optic sensor film is the polymetylmethacrylate rete that contains granularity 20nm Au nano particle.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate is coated in the tetrahydrofuran solution that is dissolved with the PMMA of 20nmAu nano particle on its polished surface after cleaning and drying, treats that solvent evaporation back obtains the magneto-optic sensor film.The incident light of certain pattern can interact with the local surface plasmon of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 10: the optical waveguide substrate of described sensing head is silica fibre, and the magneto-optic sensor film is the polymetylmethacrylate rete that contains the nucleocapsid structure composite nanoparticle of SiO2-Au.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate through clean and drying after, the tetrahydrofuran solution of PMMA that is dissolved with the nucleocapsid structure composite nanoparticle of SiO2-Au is coated on its polished surface, treat solvent evaporation back acquisition magneto-optic sensor film.Wherein the nucleocapsid structure composite nanoparticle of SiO2-Au is by being the method preparation of surperficial crystal seed and shell growth with golden nanometer particle, and particle diameter is 100nm, and the Au shell thickness is 5nm.The incident light of certain pattern can interact with the local surface plasmon of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 11: the optical waveguide substrate of described sensing head is silica fibre, is multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, is the thick Cu film of 500nm in the optical waveguide substrate, is the thick SiO of 10nm on the Cu film
2Film.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes magnetron sputtering method at the Cu film of its polished surface plating 500nm after cleaning and drying, and recycling PECVD method is at the SiO of Cu film plating 10nm
2Film.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 12: the optical waveguide substrate of described sensing head is silica fibre, is multilayer film at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, is the thick SiO of 30nm in the optical waveguide substrate
2Film is at SiO
2It is the thick Au film of 30nm on the film.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate utilizes the PECVD method at the SiO of its polished surface plating 30nm after cleaning and drying
2Film, the recycling magnetron sputtering method is at SiO
2The Au film of plating 30nm on the film.The incident light of certain pattern can interact with the long-distance surface plasmon of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 13: the optical waveguide substrate of described sensing head is silica fibre, is the Au film with optical grating construction at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate is after cleaning and drying, utilize the vacuum vapour deposition middle context layer Cr film that successively evaporation 3nm is thick on its polished surface and thickness to be the Au film of 30nm, utilize photoetching technique at Au film preparation Au grating, wherein grating parameter is 600nm, the grating fill factor, curve factor is 0.5, and the grating degree of depth is 25nm.The Cr film can be strengthened the firm degree that the Au film is connected with substrate.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Embodiment 14: the optical waveguide substrate of described sensing head is silica fibre, is that Ag nano particle by particle diameter 20nm constitutes at the suprabasil magneto-optic sensor film of the optical waveguide of silica fibre, and its average thickness is about 50nm, has island nanostructured non-periodic.The method for making of optical fiber substrate is identical with embodiment 1.The preparation method of magneto-optic sensor film: the optical waveguide substrate through clean and drying after, with its polished surface silanization, making particle diameter is that the Ag nano particle absorption of 20nm is fixed to formation Ag nano particle rete on the substrate surface.The incident light of certain pattern can interact with the surface plasmons of magneto-optic sensor film through fiber optic conduction and the coupling of magneto-optic sensor film, produces magneto-optic effect in current field.
Fig. 2 is the structural representation of the embodiment 15 to 28 of sensing head of the present invention, and among the figure: magneto-optic sensor film 4 is at Ag
+-Na
+On the glass planar optical waveguide, comprise substrate of glass 5 and ducting layer 6.
Embodiment 15: as shown in Figure 2, the optical waveguide substrate of described sensing head is the Ag that utilizes ion exchange process to make
+-Na
+The glass planar thin film optical wave-guide, described optical waveguide substrate comprises substrate of glass 5 and the ducting layer on substrate of glass 6.The magneto-optic sensor film is the Ag film of thickness 50nm, has the SiO2 diaphragm at the Ag film, and its preparation method is identical with embodiment 1.
Embodiment 16: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick Al film of 45nm in the optical waveguide substrate, is the thick Au film of 1nm on the Al film.Its preparation method is identical with embodiment 2.
Embodiment 17: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick Si of 200nm in the optical waveguide substrate
3N
4Film is at Si
3N
4Being the thick Au film of 50nm on the film, is the Si of thickness 80nm at the Au film
3N
4Film.Its preparation method is identical with embodiment 3.
Embodiment 18: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick SiO of 200nm in the optical waveguide substrate
2Film is at SiO
2Being the thick Au film of 10nm on the film, is the SiO of thickness 80nm at the Au film
2Film.Its preparation method is identical with embodiment 4.
Embodiment 19: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick Ag film of 200nm in the optical waveguide substrate, is the thick SiO of 50nm on the Ag film
2Film is at SiO
2It is the Ag film of thickness 30nm on the film.Its preparation method is identical with embodiment 5.
Embodiment 20: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick ZnO film of 50nm in the optical waveguide substrate, is the thick Au film of 50nm on ZnO film.Its preparation method is identical with embodiment 6.
Embodiment 21: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick TiO of 50nm in the optical waveguide substrate
2Film is at TiO
2It is the thick Au film of 50nm on the film.Its preparation method is identical with embodiment 7.
Embodiment 22: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick SU-8 film of 200nm in the optical waveguide substrate, is the thick Au film of 50nm on the SU-8 film.Its preparation method is identical with embodiment 8.
Embodiment 23: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is the PMMA rete that contains granularity 20nmAu nano particle, and its preparation method is identical with embodiment 9.
Embodiment 24: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is the PMMA rete that contains the nucleocapsid structure composite nanoparticle of SiO2-Au, and its preparation method is identical with embodiment 10.
Embodiment 25: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick Cu film of 500nm in the optical waveguide substrate, is the thick SiO of 10nm on the Cu film
2Film.Its preparation method is identical with embodiment 11.
Embodiment 26: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is multilayer film, is the thick SiO of 30nm in the optical waveguide substrate
2Film is at SiO
2It is the thick Au film of 30nm on the film.Its preparation method is identical with embodiment 12.
Embodiment 27: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film has the Au film of optical grating construction, has the thick middle context layer Cr film of 3nm between optical waveguide substrate and magneto-optic sensor film.Its preparation method is identical with embodiment 13.
Embodiment 28: the optical waveguide substrate of described sensing head is identical with embodiment 15, and the magneto-optic sensor film is that the Ag nano particle by granularity 20nm constitutes, and has island nanostructured non-periodic, and its preparation method is identical with embodiment 14.
Fig. 3 is the structural representation of the embodiment 29 to 42 of sensing head of the present invention, and among the figure: magneto-optic sensor film 4 is at the K that utilizes photoetching technique and ion exchange process to make
+-Na
+On the glass ribbon lightguide, comprise substrate of glass 5 and flat waveguide 7.
Embodiment 29: as shown in Figure 3, the optical waveguide substrate of described sensing head is to utilize photoetching technique to produce the band onto surface pattern earlier, the K that the recycling ion exchange process is made
+-Na
+The glass ribbon lightguide comprises substrate of glass 5 and is embedded in wherein flat waveguide 7 with strips.There is the SiO2 diaphragm in the Ag film of magneto-optic sensor film thickness 50nm at the Ag film, and its preparation method is identical with embodiment 1.
Embodiment 30: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick Al film of 45nm in the optical waveguide substrate, is the thick Au film of 1nm on the Al film.Its preparation method is identical with embodiment 2.
Embodiment 31: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick Si of 200nm in the optical waveguide substrate
3N
4Film is at Si
3N
4Being the thick Au film of 50nm on the film, is the Si of thickness 80nm at the Au film
3N
4Film.Its preparation method is identical with embodiment 3.
Embodiment 32: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick SiO of 200nm in the optical waveguide substrate
2Film is at SiO
2Being the thick Au film of 10nm on the film, is the SiO of thickness 80nm at the Au film
2Film.Its preparation method is identical with embodiment 4.
Embodiment 33: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick Ag film of 200nm in the optical waveguide substrate, is the thick SiO of 50nm on the Ag film
2Film is at SiO
2It is the Ag film of thickness 30nm on the film.Its preparation method is identical with embodiment 5.
Embodiment 34: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick ZnO film of 50nm in the optical waveguide substrate, is the thick Au film of 50nm on ZnO film.Its preparation method is identical with embodiment 6.
Embodiment 35: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick TiO of 50nm in the optical waveguide substrate
2Film is at TiO
2It is the thick Au film of 50nm on the film.Its preparation method is identical with embodiment 7.
Embodiment 36: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick SU-8 film of 200nm in the optical waveguide substrate, is the thick Au film of 50nm on the SU-8 film.Its preparation method is identical with embodiment 8.
Embodiment 37: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is the PMMA rete that contains 20nm Au nano particle, and its preparation method is identical with embodiment 9.
Embodiment 38: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is the PMMA rete that contains the nucleocapsid structure composite nanoparticle of SiO2-Au, and its preparation method is identical with embodiment 10.
Embodiment 39: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick Cu film of 500nm in the optical waveguide substrate, is the thick SiO of 10nm on the Cu film
2Film.Its preparation method is identical with embodiment 11.
Embodiment 40: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is multilayer film, is the thick SiO of 30nm in the optical waveguide substrate
2Film is at SiO
2It is the thick Au film of 30nm on the film.Its preparation method is identical with embodiment 12.
Embodiment 41: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film has the Au film of optical grating construction, has the thick middle context layer Cr film of 3nm between optical waveguide substrate and magneto-optic sensor film.Its preparation method is identical with embodiment 13.
Embodiment 42: the optical waveguide substrate of described sensing head is identical with embodiment 29, and the magneto-optic sensor film is that the Ag nano particle by granularity 20nm constitutes, and has island nanostructured non-periodic, and its preparation method is identical with embodiment 14.
Below be the embodiment of method for sensing of the present invention.In embodiment 43～46, sensing head can adopt any one in the previous embodiment.
Embodiment 43: Figure 4 shows that an embodiment of electric current sensing method of the present invention, present embodiment adopts the detection method based on Strength Changes.He-Ne laser instrument 8 sends monochromatic light and is transformed to the p polarized light through polaroid 9, light wave is coupled in the single-mode fiber 11 by lens 10, import to sensing head 12 of the present invention by optical fiber again, sensing head of the present invention places energising current 13 1 sides, the variation of electric current causes the variation of conductor surrounding magnetic field, changes of magnetic field changes catoptrical light intensity by the magneto-optic effect of the magneto-optic sensor film of described sensing head, emergent light is sent into Si photoelectric cell 14, through comprising preposition amplification filtering circuit, the signal processing unit 15 of A/D conversion and data acquisition process software obtains tested current information.
Embodiment 44: Figure 5 shows that an embodiment of electric current sensing method of the present invention, present embodiment adopts the detection method that changes based on polarization state.Laser diode 16 sends monochromatic light and is transformed to the p polarized light through Glan prism 17, and light wave is coupled in the polarization maintaining optical fibre 18 by lens 10, imports to sensing head 12 of the present invention again.Sensing head of the present invention places energising current 13 1 sides, and the variation of electric current causes the variation of conductor surrounding magnetic field, and changes of magnetic field makes the rotation of polarization polarization surface by the magneto-optic effect of the magneto-optic sensor film of described sensing head.The emergent light of described sensing head is coupled to Wollaston prism 19 by lens 10, prism will be imported light and be divided into the orthogonal two bundle polarized lights of direction of vibration, and deliver to Si photoelectric cell 14 respectively, the signal processing unit 15 through comprising preposition amplification filtering circuit, A/D conversion and data acquisition process software obtains tested current information.
Embodiment 45: Figure 6 shows that an embodiment of electric current sensing method of the present invention, adopt based on Mach-Zehnder type interference detection method.Distributed Feedback Laser 20 sends coherent light, through optoisolator 21, becomes the p polarized light partially by 22 of the optical fiber polarizers, be coupled into polarization maintaining optical fibre 18 again after, send into the polarization maintaining optical fibre 18 of two same length respectively by 3dB polarization-maintaining fiber coupler 23.Wherein an optical fiber is feeler arm, and string has sensing head 12 of the present invention, places energising current 13 1 sides; Another optical fiber is reference arm, the column PZT24 and the optical fiber polarization controller 25 that comprise wound fiber, the former further obtains the quadrature phase bias condition for generation of phase delay, to offset the phase fluctuation that produces because of variation of temperature, the latter controls the reference polarization state of light of propagating in the reference arm, and reference light and signal polarization state of light are mated mutually.Sensing head 12 of the present invention places energising current 13 1 sides, and the variation of electric current causes the variation of conductor surrounding magnetic field, and changes of magnetic field changes the phase place of polarized light by the magneto-optic effect of the magneto-optic sensor film of described sensing head.Enter three-dB coupler 23 from the two-beam of feeler arm and reference arm output, stack produces interference effect, and deliver to CCD photodetector 24 respectively, the signal processing unit 15 through comprising preposition amplification filtering circuit, A/D conversion and data acquisition process software obtains tested current information.
Embodiment 46: Figure 7 shows that an embodiment of electric current sensing method of the present invention, adopt the detection method based on wavelength variations.Halogen tungsten lamp 25 output wide range light are the p polarized light by 9 of polaroids partially, be coupled into the multimode optical fiber 26 that core diameter is 600 μ m through lens 10, import to sensing head 12 of the present invention again, sensing head of the present invention places energising current 13 1 sides, the variation of electric current causes the variation of conductor surrounding magnetic field, and changes of magnetic field moves the spectral absorption peak position by the magneto-optic effect of the magneto-optic sensor film of described sensing head.The emergent light of described sensing head is coupled to fiber spectrometer 27 and obtains spectral signal, and the signal processing unit 15 through comprising preposition amplification filtering circuit, A/D conversion and data acquisition process software obtains tested current information again.
Claims (14)
1. the sensing head of an optical current mutual inductor is characterized in that, described sensing head comprises the optical waveguide substrate and is positioned at the suprabasil magneto-optic sensor film of described optical waveguide; Described magneto-optic sensor film has surface plasmons metal material nanostructured feature; Described magneto-optic sensor film is to constitute by one or several surface plasmons metallic material film is folded layer by layer, or by one or several surface plasmons metal material rete and one or several non magnetic dielectric material rete is stacked constitutes, or material dopedly go into non magnetic dielectric material rete and constitute by what contain surface plasmons metal material nanostructured; Described surface plasmons metal material is one or more among Au, Ag, Cu or the Al; Described non magnetic dielectric material is used for the conduction of light wave and adjusts the shooting conditions of surface plasmons, and described non magnetic dielectric material comprises Inorganic Non-metallic Materials or polymeric material or metal oxide materials.
2. the sensing head of optical current mutual inductor according to claim 1, it is characterized in that, described magneto-optic sensor film is a kind of sandwich structure, and namely surface plasmons metal material rete is clipped between two non magnetic dielectric material retes or a non magnetic dielectric material rete is clipped between two surface plasmons metal material retes.
3. the sensing head of optical current mutual inductor according to claim 1 is characterized in that, a surface plasmons metal material rete of described magneto-optic sensor film is clipped between described optical waveguide substrate and the described non magnetic dielectric material rete.
4. according to the sensing head of the optical current mutual inductor described in the claim 1, it is characterized in that described surface plasmons metal material rete has periodically or the aperiodicity nanostructured except thicknesses of layers.
5. the sensing head of optical current mutual inductor according to claim 4 is characterized in that, described periodic nano-structure is nanometer grating structure or nano-pore array structure; Described aperiodicity nanostructured is surperficial island nanostructured non-periodic.
6. according to the sensing head of each described optical current mutual inductor in the claim 1,4,5, it is characterized in that described surface plasmons material nano structure feature refers to the thickness of surface plasmons metal material nanometer rete, or the particle diameter of surface plasmons metal material nano particle, or in nano composite material the nanostructured of surface plasmons metal material.
7. the sensing head of optical current mutual inductor according to claim 1 is characterized in that, described optical waveguide substrate utilizes total reflection phenomenon to realize the conduction of light in material.
8. the sensing head of optical current mutual inductor according to claim 7 is characterized in that, described optical waveguide substrate comprises optical fiber or planar optical waveguide.
9. the sensing head of optical current mutual inductor according to claim 1 is characterized in that, context layer in the middle of existing between described optical waveguide substrate and described magneto-optic sensor film.
10. the sensing head of optical current mutual inductor according to claim 1 is characterized in that, has protective seam at described magneto-optic sensor film.
11. the sensing head of optical current mutual inductor according to claim 1 is characterized in that the size of described nanostructured feature is in 500nm.
12. the sensing head of optical current mutual inductor according to claim 1 is characterized in that the size of described nanostructured feature is at 1-500nm.
13. the sensing head of optical current mutual inductor according to claim 1 is characterized in that the size of described nanostructured feature is at 10-100nm.
14. a sensing head that utilizes the described optical current mutual inductor of claim 1 carries out the method for current sense, it is characterized in that:
(1) light wave that sends of light source has p wave polarization component, or makes it have p wave polarization component by the Polarization Control device;
(2) light wave of the described p of having wave polarization component is incident on the suprabasil magneto-optic sensor film of described optical waveguide by the optical waveguide substrate of described optical current mutual inductor sensing head, interacts with surface plasmons metal material in the described magneto-optic sensor film;
(3) light wave of the described p of having wave polarization component produces in the magnetic field at extraneous electric current by described interaction and produces magneto-optic effect, and intensity, polarization state, phase place or the wavelength of described light wave are changed;
(4) by detecting described light wave by intensity, polarization state, phase place or wavelength change before and after the described magneto-optic sensor film, obtain the information of described electric current.
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