CN101972754B - Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity - Google Patents
Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity Download PDFInfo
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- CN101972754B CN101972754B CN2010102319371A CN201010231937A CN101972754B CN 101972754 B CN101972754 B CN 101972754B CN 2010102319371 A CN2010102319371 A CN 2010102319371A CN 201010231937 A CN201010231937 A CN 201010231937A CN 101972754 B CN101972754 B CN 101972754B
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- lithium niobate
- water
- polishing
- cmp
- alkalescence
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Abstract
The invention relates to a surface cleaning technique after lithium niobate chemical-mechanical polishing liquor is used to precisely finish and polish a lithium niobate wafer. Water polishing is adopted to achieve the clean of the surface, the main chemical components of water polishing liquor comprise an active agent, a chelant, a corrosion resistance agent and deionized water. After alkaline polishing is just completed, the water polishing liquor is immediately used and a method of large flow amount of water polishing is adopted, thereby washing the residual polishing slurry away and simultaneously rapidly reducing surface tension, forming a monomolecular passive film and leading metal ions to form soluble chelate to cleanly and perfectly polish the surface. The water polishing method has the advantages of low cost, no pollution of environment and no corrosion of equipment.
Description
Technical field
The invention belongs to the clean technology of wafer surface behind the CMP, particularly relate to the technology that obtains clean surface behind the lithium columbate crystal alkalescence CMP.
Background technology
Lithium columbate crystal is a kind of as the rare artificial lens of monocrystalline silicon.Owing to having multiple character such as ferroelectric, piezoelectricity, thermoelectricity, electric light, acousto-optic and photorefractive effect, it is widely used in preparing various kinds surface acoustic wave, electric light and device for non-linear optical.In recent years, perfect along with rear-earth-doped engineering, farmland engineering and near stoichiometric proportion crystal growth and back process technology, relevant LiNbO
3Waveguide, LiNbO
3The research of photoelectricity and photonic propulsion device function, performance sharply increases, the optics silicon materials that its key components that possibly become fields such as optic communication, military confrontation, optical storage of data, optical gyroscope, optical remote sensing, laser technology is made.
With the photoelectron technology development, the demand that lithium columbate crystal is made the ultraprecise components and parts grows with each passing day.This type components and parts not only need high precision and extremely low surface roughness, also require no subsurface damage.Because lithium columbate crystal has following processing characteristic: hardness low (Mohs' hardness is 5), be prone to produce the very little wedge broken grain of angle in the process, produce the sand road.Be prone to scuffing simultaneously, defective such as the limit of collapsing.Especially diving to scratch is difficult for finding, in follow-up use, may influence device performance, stability and reliability, and even cause greater loss; Toughness is high, and process velocity is slow; Temperature is had sensitiveness, be prone to produce the microdomain counter-rotating.
Therefore, LiNbO
3Often occur easily in the actual processing of wafer that working (machining) efficiency and yield rate are low, crudy is difficult to problems such as control.At present; Domestic polishing to lithium columbate crystal adopts the higher diadust of price to make grinding agent more, realizes Precision Machining through traditional processing method, and minority adopts polishing fluid that it is carried out chemically mechanical polishing (ChemicalMechanical Polishing; CMP); But effect is undesirable, and the former fineness can only reach 3 grades, and latter's surface roughness does not reach requirement.
Therefore, make the demand of ultraprecise components and parts for satisfying lithium columbate crystal, lithium columbate crystal chemically mechanical polishing (Chemical-Mechanical Polishing is called for short CMP) technology and throwing post-processing technology become major issue anxious to be solved.Surface of polished clean technology as one of process for treating surface is even more important.After lithium niobate crystal chip polishes production in batches at present, phenomenons such as wafer surface energy height, big, the residual polishing fluid skewness of surface tension, contamination metal ion, thus cause the raising of cost in the following process and the reduction of device yield.
Summary of the invention
The present invention is in order to solve wafer surface energy height behind the known lithium niobate crystal chip CMP, big, the residual polishing fluid skewness of surface tension, to stain problem such as metal ion, and discloses surface cleaning method behind a kind of simple and easy to do, free of contamination lithium niobate crystal chip CMP.
The surface cleaning method implementation step is following behind the lithium niobate crystal chip CMP of the present invention:
(1) get a certain amount of deionized water, add activating agent, chelating agent, corrosion inhibitor while stirring, the addition of activating agent is 5-30g/L, and the addition of chelating agent is 5-30g/L, and the addition of corrosion inhibitor is 5-30g/L;
(2) use above-mentioned aqua to adopt the flow of 1000g/min-4000g/min to carry out the water throwing cleaning behind the alkaline CMP, the water throwing time is 30-60s, obtains clean surface.
Described activating agent is the commercially available FA/O surfactant of Jingling Microelectric Material Co., Ltd., Tianjin, O π-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O π-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H), the secondary alkyl alcohol ether of polyoxyethylene (JFC) a kind of.
Described chelating agent is the commercially available FA/O chelating agent of Jingling Microelectric Material Co., Ltd., Tianjin, ethylenediamine tetra-acetic acid four (tetrahydroxyethyl-ethylene diamine), and structural formula is following:
Described corrosion inhibitor is for being hexamethylenetetramine or phenylpropyl alcohol triazole, wherein hexamethylenetetramine C
6H
12N
4, structural formula:
Phenylpropyl alcohol triazole C
6H
5N
3, structural formula:
Adopt acting as of technology among the present invention:
There are problems such as energy height, big, the residual polishing fluid skewness of surface tension, contamination metal ion in wafer surface behind the lithium columbate crystal alkaline polishing.After alkaline polishing is just accomplished; In liquid throwing water, add surfactant, chelating agent, corrosion inhibitor etc. at once; And adopt the method for big flow water throwing; Can residual polishing fluid be washed away, can reduce surface tension simultaneously rapidly, form the unimolecule passivating film, also can make metal ion form soluble chelate, thereby reach clean, perfect polished surface.
Beneficial effect of the present invention and advantage:
1.CMP after select the aqua that contains surfactant, chelating agent, compound corrosion inhibitor etc. for use; Carry out big flow water throwing and come the clean wafer surface; Equipment is not had corrosion, and can the polishing fluid that residue in the wafer surface skewness be washed away rapidly, can obtain cleaning, perfect polished surface.
2. select for use surfactant that the high surface tension of chip surface after polishing is reduced rapidly, reduce the damage layer, improve the uniformity of wafer surface quality;
3. the chelating agent of selecting for use can with wafer surface metal remained ion is reacted, generate the big molecule chelate of solubility, in big flow aqua rolling action disengaging wafer surface down.
4. the corrosion inhibitor of selecting for use can form the unimolecule passivating film at chip surface after polishing, stops the polishing fluid of wafer surface uneven distribution to continue and the matrix reaction, improves the perfection of chip surface after polishing.
The specific embodiment
Further specify the present invention with embodiment below.
Embodiment 1: the water-soluble surface cleaning liquid of preparation 2000g lithium columbate crystal
Remove ionized water 1800g, put into FA/O surfactant 50g while stirring, FA/O chelating agent 40g claims to pour aforesaid liquid while stirring into after 10g hexamethylenetetramine corrosion inhibitor is with the dilution of 100g deionized water then.Get the water-soluble surface cleaning liquid of 2000g silicon after stirring, adopt the flow of 2000g/min to carry out water throwing 60s, any surface finish does not have corrosion figure.
Embodiment 2: the water-soluble surface cleaning liquid of preparation 4000g lithium columbate crystal
Remove ionized water 3700g, put into O π-7 ((C while stirring
10H
21-C
6H
4-O-CH
2CH
2O)
7-H) surfactant 70g, FA/O chelating agent 60g claims to pour aforesaid liquid while stirring into after 70g phenylpropyl alcohol triazole corrosion inhibitor is with the dilution of 100g deionized water then.Get the water-soluble surface cleaning liquid of 4000g silicon after stirring, after the flow of employing 4000g/min carried out water throwing, any surface finish did not have corrosion figure.
Claims (4)
1. method for cleaning surface behind the lithium niobate crystal chip alkalescence CMP is characterized in that, carries out according to following steps:
(1) preparation liquid throwing water: get a certain amount of deionized water, add activating agent, chelating agent and corrosion inhibitor while stirring, the addition of activating agent is 5-30g/L, and the addition of chelating agent is 5-30g/L, and the addition of corrosion inhibitor is 5-30g/L;
(2) use above-mentioned liquid throwing water to adopt the flow of 1000g/min-4000 g/min to carry out the water throwing cleaning behind the lithium niobate crystal chip alkalescence CMP, the water throwing time is 30-60s.
2. method for cleaning surface behind the lithium niobate crystal chip alkalescence CMP according to claim 1, it is characterized in that: the activating agent of said step (1) is the commercially available FA/O surfactant of Jingling Microelectric Material Co., Ltd., Tianjin, O π-7 ((C
1OH
21-C
6H
4-O-CH
2CH
2O)
7-H), O π-10 ((C
1OH
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 ((C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H) or JFC a kind of.
3. method for cleaning surface behind the lithium niobate crystal chip alkalescence CMP according to claim 1, it is characterized in that: said step (1) chelating agent is the commercially available FA/O chelating agent of Jingling Microelectric Material Co., Ltd., Tianjin.
4. method for cleaning surface behind the lithium niobate crystal chip alkalescence CMP according to claim 1, it is characterized in that: the corrosion inhibitor of said step (1) is for being hexamethylenetetramine or phenylpropyl alcohol triazole.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102319371A CN101972754B (en) | 2010-07-21 | 2010-07-21 | Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102319371A CN101972754B (en) | 2010-07-21 | 2010-07-21 | Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity |
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|---|---|
| CN101972754A CN101972754A (en) | 2011-02-16 |
| CN101972754B true CN101972754B (en) | 2012-09-05 |
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| CN114472341B (en) * | 2022-04-19 | 2022-07-08 | 天通控股股份有限公司 | Cleaning method of lithium niobate single-side polished wafer |
Citations (4)
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|---|---|---|---|---|
| US6475072B1 (en) * | 2000-09-29 | 2002-11-05 | International Business Machines Corporation | Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP) |
| CN1858131A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for grinding and polishing lithium niobate optical wafer |
| CN101302404A (en) * | 2008-07-01 | 2008-11-12 | 上海大学 | Preparation of nano-cerium oxide composite abrasive grain polishing solution |
| CN100467219C (en) * | 2006-07-10 | 2009-03-11 | 中芯国际集成电路制造(上海)有限公司 | Chemical and mechanical grinding method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4046486B2 (en) * | 2001-06-13 | 2008-02-13 | Ｎｅｃエレクトロニクス株式会社 | Cleaning water and wafer cleaning method |
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2010
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475072B1 (en) * | 2000-09-29 | 2002-11-05 | International Business Machines Corporation | Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP) |
| CN1858131A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for grinding and polishing lithium niobate optical wafer |
| CN100467219C (en) * | 2006-07-10 | 2009-03-11 | 中芯国际集成电路制造(上海)有限公司 | Chemical and mechanical grinding method |
| CN101302404A (en) * | 2008-07-01 | 2008-11-12 | 上海大学 | Preparation of nano-cerium oxide composite abrasive grain polishing solution |
Non-Patent Citations (1)
| Title |
|---|
| 舒行军.Ta-2W合金的化学机械抛光实验研究.《润滑与密封》.2006,(第3期), * |
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