CN101972754A - Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity - Google Patents
Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity Download PDFInfo
- Publication number
- CN101972754A CN101972754A CN 201010231937 CN201010231937A CN101972754A CN 101972754 A CN101972754 A CN 101972754A CN 201010231937 CN201010231937 CN 201010231937 CN 201010231937 A CN201010231937 A CN 201010231937A CN 101972754 A CN101972754 A CN 101972754A
- Authority
- CN
- China
- Prior art keywords
- lithium niobate
- water
- polishing
- cmp
- alkalescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to a surface cleaning technique after lithium niobate chemical-mechanical polishing liquor is used to precisely finish and polish a lithium niobate wafer. Water polishing is adopted to achieve the clean of the surface, the main chemical components of water polishing liquor comprise an active agent, a chelant, a corrosion resistance agent and deionized water. After alkaline polishing is just completed, the water polishing liquor is immediately used and a method of large flow amount of water polishing is adopted, thereby washing the residual polishing slurry away and simultaneously rapidly reducing surface tension, forming a monomolecular passive film and leading metal ions to form soluble chelate to cleanly and perfectly polish the surface. The water polishing method has the advantages of low cost, no pollution of environment and no corrosion of equipment.
Description
Technical field
The invention belongs to the clean technology of wafer surface behind the CMP, particularly relate to the technology that obtains clean surface behind the lithium columbate crystal alkalescence CMP.
Background technology
Lithium columbate crystal is a kind of as the rare artificial lens of monocrystalline silicon.Owing to having multiple character such as ferroelectric, piezoelectricity, thermoelectricity, electric light, acousto-optic and photorefractive effect, it is widely used in making all kinds of surface acoustic waves, electric light and device for non-linear optical.In recent years, perfect along with rear-earth-doped engineering, farmland engineering and near stoichiometric proportion crystal growth and back process technology, relevant LiNbO
3Waveguide, LiNbO
3The research of photoelectricity and photonic propulsion device function, performance sharply increases, the optics silicon materials that its key components that may become fields such as optic communication, military confrontation, optical storage of data, optical gyroscope, optical remote sensing, laser technology is made.
With the photoelectron technology development, the demand that lithium columbate crystal is made the ultraprecise components and parts grows with each passing day.These class components and parts not only need high precision and extremely low surface roughness, also require no subsurface damage.Because lithium columbate crystal has following processing characteristic: hardness low (Mohs' hardness is 5), easily produce the very little wedge broken grain of angle in the process, produce the sand road.Easily go out simultaneously defectives such as scuffing, the limit of collapsing.Especially diving to scratch is difficult for finding, may influence device performance, stability and reliability in follow-up use, and even cause greater loss; The toughness height, process velocity is slow; Temperature is had sensitiveness, easily produce the microdomain counter-rotating.
Therefore, LiNbO
3Often occur easily in the actual processing of wafer that working (machining) efficiency and yield rate are low, crudy is difficult to problems such as control.At present, domestic polishing to lithium columbate crystal adopts the higher diadust of price to make grinding agent more, realize Precision Machining by traditional processing method, minority adopts polishing fluid that it is carried out chemically mechanical polishing (ChemicalMechanical Polishing, CMP), but effect is undesirable, and the former fineness can only reach 3 grades, and latter's surface roughness does not reach requirement.
Therefore, make the demand of ultraprecise components and parts for satisfying lithium columbate crystal, lithium columbate crystal chemically mechanical polishing (Chemical-Mechanical Polishing is called for short CMP) technology and throwing post-processing technology become major issue anxious to be solved.Surface of polished clean technology as one of process for treating surface is even more important.After lithium niobate crystal chip polishes production in batches at present, phenomenons such as wafer surface energy height, big, the residual polishing fluid skewness of surface tension, contamination metal ion, thus cause the raising of cost in the following process and the reduction of device yield.
Summary of the invention
The present invention is in order to solve wafer surface energy height behind the known lithium niobate crystal chip CMP, big, the residual polishing fluid skewness of surface tension, to stain problem such as metal ion, and discloses a kind of simple and easy to do, free of contamination lithium niobate crystal chip CMP rear surface cleaning method.
Lithium niobate crystal chip CMP of the present invention rear surface cleaning method implementation step is as follows:
(1) get a certain amount of deionized water, add activating agent, chelating agent, corrosion inhibitor while stirring, the addition of activating agent is 5-30g/L, and the addition of chelating agent is 5-30g/L, and the addition of corrosion inhibitor is 5-30g/L;
(2) use above-mentioned aqua to adopt the flow of 1000g/min-4000g/min to carry out the water throwing cleaning behind the alkaline CMP, the water throwing time is 30-60s, obtains clean surface.
Described activating agent is the commercially available FA/O surfactant of Jingling Microelectric Material Co., Ltd., Tianjin, O π-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O π-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H), the secondary alkyl alcohol ether of polyoxyethylene (JFC) a kind of.
Described chelating agent is the commercially available FA/O chelating agent of Jingling Microelectric Material Co., Ltd., Tianjin, ethylenediamine tetra-acetic acid four (tetrahydroxyethyl-ethylene diamine), and structural formula is as follows:
Described corrosion inhibitor is for being hexamethylenetetramine or phenylpropyl alcohol triazole, wherein hexamethylenetetramine C
6H
12N
4, structural formula:
Phenylpropyl alcohol triazole C
6H
5N
3, structural formula:
Adopt acting as of technology among the present invention:
There are problems such as energy height, big, the residual polishing fluid skewness of surface tension, contamination metal ion in wafer surface behind the lithium columbate crystal alkaline polishing.After alkaline polishing is just finished, in liquid throwing water, add surfactant, chelating agent, corrosion inhibitor etc. at once, and adopt the method for big flow water throwing, residual polishing fluid can be washed away, can reduce simultaneously surface tension rapidly, form the unimolecule passivating film, also can make metal ion form soluble chelate, thereby reach clean, perfect polished surface.
Beneficial effect of the present invention and advantage:
1.CMP after select the aqua that contains surfactant, chelating agent, compound corrosion inhibitor etc. for use, carry out big flow water throwing and come the clean wafer surface, equipment is not had corrosion, and the polishing fluid that residues in the wafer surface skewness can be washed away rapidly, can obtain cleaning, perfect polished surface.
2. select for use surfactant that the high surface tension of chip surface after polishing is reduced rapidly, reduce the damage layer, improve the uniformity of wafer surface quality;
3. the chelating agent of selecting for use can with wafer surface metal remained ion is reacted, generate the big molecule chelate of solubility, under big flow aqua rolling action, breaking away from wafer surface.
4. the corrosion inhibitor of selecting for use can form the unimolecule passivating film at chip surface after polishing, stops the polishing fluid of wafer surface uneven distribution to continue and the matrix reaction, improves the perfection of chip surface after polishing.
The specific embodiment
Further specify the present invention with embodiment below.
Embodiment 1: the water-soluble surface cleaning liquid of preparation 2000g lithium columbate crystal
Remove ionized water 1800g, put into FA/O surfactant 50g while stirring, FA/O chelating agent 40g claims 10g hexamethylenetetramine corrosion inhibitor to pour aforesaid liquid while stirring into after the 100g deionized water dilution then.Get the water-soluble surface cleaning liquid of 2000g silicon after stirring, adopt the flow of 2000g/min to carry out water throwing 60s, any surface finish does not have corrosion figure.
Embodiment 2: the water-soluble surface cleaning liquid of preparation 4000g lithium columbate crystal
Remove ionized water 3700g, put into O π-7 ((C while stirring
10H
21-C
6H
4-O-CH
2CH
2O)
7-H) surfactant 70g, FA/O chelating agent 60g pours aforesaid liquid into after claiming 70g phenylpropyl alcohol triazole corrosion inhibitor with the dilution of 100g deionized water then while stirring.Get the water-soluble surface cleaning liquid of 4000g silicon after stirring, after the flow of employing 4000g/min carried out water throwing, any surface finish did not have corrosion figure.
Claims (4)
1. a lithium niobate crystal chip alkalescence CMP rear surface clean method is characterized in that, carries out (weight wt%) according to following steps:
(1) preparation liquid throwing water: get a certain amount of deionized water, add activating agent, chelating agent and corrosion inhibitor while stirring, the addition of activating agent is 5-30g/L, and the addition of chelating agent is 5-30g/L, and the addition of corrosion inhibitor is 5-30g/L;
(2) use above-mentioned liquid throwing water to adopt the flow of 1000g/min-4000g/min to carry out the water throwing cleaning behind the lithium niobate crystal chip alkalescence CMP, the water throwing time is 30-60s.
2. lithium niobate crystal chip alkalescence CMP according to claim 1 rear surface clean method, it is characterized in that: the activating agent of described step (1) is the commercially available FA/O surfactant of Jingling Microelectric Material Co., Ltd., Tianjin, O π-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O π-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H) or JFC a kind of.
3. lithium niobate crystal chip alkalescence CMP according to claim 1 rear surface clean method, it is characterized in that: described step (1) chelating agent is the commercially available FA/O chelating agent of Jingling Microelectric Material Co., Ltd., Tianjin.
4. lithium niobate crystal chip alkalescence CMP according to claim 1 rear surface clean method, it is characterized in that: the corrosion inhibitor of described step (1) is for being hexamethylenetetramine or phenylpropyl alcohol triazole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102319371A CN101972754B (en) | 2010-07-21 | 2010-07-21 | Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102319371A CN101972754B (en) | 2010-07-21 | 2010-07-21 | Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101972754A true CN101972754A (en) | 2011-02-16 |
| CN101972754B CN101972754B (en) | 2012-09-05 |
Family
ID=43572677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102319371A Expired - Fee Related CN101972754B (en) | 2010-07-21 | 2010-07-21 | Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101972754B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114472341A (en) * | 2022-04-19 | 2022-05-13 | 天通控股股份有限公司 | Cleaning method of lithium niobate single-side polished wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475072B1 (en) * | 2000-09-29 | 2002-11-05 | International Business Machines Corporation | Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP) |
| US20020189639A1 (en) * | 2001-06-13 | 2002-12-19 | Nec Corporation | Cleaning water for cleaning a wafer and method of cleaning a wafer |
| CN1858131A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for grinding and polishing lithium niobate optical wafer |
| CN101302404A (en) * | 2008-07-01 | 2008-11-12 | 上海大学 | Preparation of nano-cerium oxide composite abrasive grain polishing solution |
| CN100467219C (en) * | 2006-07-10 | 2009-03-11 | 中芯国际集成电路制造(上海)有限公司 | Chemical and mechanical grinding method |
-
2010
- 2010-07-21 CN CN2010102319371A patent/CN101972754B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475072B1 (en) * | 2000-09-29 | 2002-11-05 | International Business Machines Corporation | Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP) |
| US20020189639A1 (en) * | 2001-06-13 | 2002-12-19 | Nec Corporation | Cleaning water for cleaning a wafer and method of cleaning a wafer |
| CN1858131A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for grinding and polishing lithium niobate optical wafer |
| CN100467219C (en) * | 2006-07-10 | 2009-03-11 | 中芯国际集成电路制造(上海)有限公司 | Chemical and mechanical grinding method |
| CN101302404A (en) * | 2008-07-01 | 2008-11-12 | 上海大学 | Preparation of nano-cerium oxide composite abrasive grain polishing solution |
Non-Patent Citations (1)
| Title |
|---|
| 《润滑与密封》 20060330 舒行军 Ta-2W合金的化学机械抛光实验研究 , 第3期 2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114472341A (en) * | 2022-04-19 | 2022-05-13 | 天通控股股份有限公司 | Cleaning method of lithium niobate single-side polished wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101972754B (en) | 2012-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101857775A (en) | Lithium niobate crystal polishing solution and preparation method thereof | |
| CN109576084B (en) | Glass cleaning agent for cover plate glass and preparation method thereof | |
| CN100556619C (en) | The control method of surface roughness of saphire substrate material | |
| CN108193281B (en) | Polycrystalline black silicon texturing process | |
| CN101671527A (en) | Copper chemical mechanical polishing solution with high removing rate and low damage, and preparation method thereof | |
| CN101665665A (en) | Polishing solution for reducing copper chemical mechanical polishing roughness | |
| CN101912855B (en) | Surface cleaning method after sapphire substrate material polishing | |
| CN105385357A (en) | Polishing solution for A orientation sapphire polishing, and preparation method thereof | |
| CN104669454B (en) | A kind of processing method of Sapphire mobile phone windows be protected screen with holes | |
| CN101092541A (en) | Finishing polish liquid in use for silicon wafer | |
| CN100491073C (en) | Method for controlling planeness during chemically mechanical polishing for ULSI multiple-layered copper wiring | |
| CN106663619A (en) | Composition for polishing silicon wafers | |
| CN102127373A (en) | Chemical and mechanical polishing composition for high-removal and low-scratch silicon chip and preparation method thereof | |
| CN113185920A (en) | Chemical mechanical polishing solution for lithium niobate crystal | |
| CN101972754B (en) | Surface cleaning method after carrying out chemical-mechanical polishing (CMP) on lithium niobate wafer in alkalinity | |
| CN101935596B (en) | Polishing post-cleaning solution of sulfur series compound phase-change material | |
| CN104449404B (en) | The polishing fluid of germanium crystal chemically mechanical polishing and using method | |
| CN108966673A (en) | The grinding method and composition for polishing set group of silicon substrate | |
| CN101081965A (en) | Polishing liquid for germanium wafer and preparation method thereof | |
| CN101906638B (en) | Surface cleaning method of polished silicon substrate material | |
| CN104017501A (en) | Ultrasonic atomization-type polishing solution suitable for TFT-LCD (Thin Film Transistor-Liquid Crystal Display) glass substrate | |
| CN100462203C (en) | Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing | |
| CN105738184B (en) | The application method for the etchant that manganese steel austenite grain boundary is shown | |
| CN102010659B (en) | Preparation method of polishing solution for grinding and polishing lithium niobate optical chips | |
| CN104526539B (en) | The control method of gyro erected optical element quartz substrate material C MP polished surface roughness |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120905 Termination date: 20160721 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |