CN101964306A - Wafer grinding method and protection belt - Google Patents
Wafer grinding method and protection belt Download PDFInfo
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- CN101964306A CN101964306A CN2010102360554A CN201010236055A CN101964306A CN 101964306 A CN101964306 A CN 101964306A CN 2010102360554 A CN2010102360554 A CN 2010102360554A CN 201010236055 A CN201010236055 A CN 201010236055A CN 101964306 A CN101964306 A CN 101964306A
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- chuck table
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000919 ceramic Substances 0.000 claims abstract description 33
- 239000011148 porous material Substances 0.000 claims description 29
- 238000012423 maintenance Methods 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 29
- 235000012431 wafers Nutrition 0.000 description 75
- 230000003287 optical effect Effects 0.000 description 38
- 229910052594 sapphire Inorganic materials 0.000 description 21
- 239000010980 sapphire Substances 0.000 description 21
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 14
- 229910001651 emery Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005422 blasting Methods 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000004702 methyl esters Chemical class 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
- -1 gallium nitride compound Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
The invention provides a wafer grinding method and a protection belt. Even though a substrate is very thin due to a back for grinding a hard and brittle substrate, the substrate does not crack. The wafer grinding method for grinding the back of a wafer with a device to form a preset thickness comprises: a protection belt adhering step: adhering the protection belt on the surface of the wafer; a wafer keeping step: absorbing and keeping another surface of the protection belt on a keeping surface of a chuck working board; a grinding step: making a grinding surface of a rotary grinding tool act on the back of the wafer absorbed and kept on the keeping surface, so as to grind the back of the waver and wherein a keeping part with the keeping surface is formed by a porous ceramic with many gas holes and another surface of the protection belt is a rough surface with many concave convex parts and the concave convex parts are embedded into the gas holes of the porous ceramic for forming the keeping part and in the wafer keeping step, the concave convex parts are embedded into the gas holes of the porous ceramic for forming the keeping part.
Description
Technical field
The present invention relates to be used for wafers such as grinding optical device wafer the back side grinding attachment and in order to protect the device that is formed at wafer surface the boundary belt that is pasted on wafer surface.
Background technology
Optical device wafer marks off a plurality of zones on the surface of sapphire substrate etc. by the preset lines of cutting apart that is called as spacing track that is clathrate ground and forms, at this regional stacked epitaxial loayer (エ ピ that is made of gallium nitride compound semiconductor etc. that marks off
Thereby) the formation optical device.Then, optical device wafer is cut off along spacing track, come, produce optical device one by one thus with the Region Segmentation that will be formed with optical device.Divided like this optical device wafer utilized grinding attachment that grinding is carried out at the back side of sapphire substrate, thereby is machined to preset thickness before cutting off along spacing track.In addition; the grinding at the back side of sapphire substrate is implemented as follows: paste the boundary belt that is made of the vinyl chloride sheet material for the optical device of protecting the surface that is formed at sapphire substrate; and this boundary belt side remained in chuck table (for example, with reference to patent documentation 1).
Patent documentation 1: TOHKEMY 2008-23693 communique
Yet, when pasting the boundary belt that constitutes by the vinyl chloride sheet material on the surface of sapphire substrate and carrying out grinding, make sapphire substrate the thickness attenuation and reach 50 μ m when following, exist sapphire substrate can produce the problem of breaking.This problem also can produce in the grinding of hard brittle bases such as silicon carbide substrate.
Such problem be considered to because: when utilizing emery wheel that grinding is carried out at the back side of the substrate that remains in chuck table through boundary belt, be pasted on the boundary belt generation lateral shift of substrate surface.
Summary of the invention
The present invention finishes in view of the above fact, even its major technology problem is to provide the back side of the hard brittle base of a kind of grinding to make this substrate very thin, this substrate can not produce method for grinding and the boundary belt that breaks yet.
In order to solve above-mentioned technical task, according to the present invention, a kind of method of grinding wafer is provided, this method of grinding wafer is that grinding is carried out to form the method for grinding wafer of preset thickness in the back side of the wafer that is formed with device on the surface, it is characterized in that, described method of grinding wafer comprises following operation: boundary belt is pasted operation, pastes in the operation at this boundary belt, a face of boundary belt is pasted on the surface of wafer; Wafer keeps operation, keeps in operation at this wafer, another face absorption of boundary belt that is pasted on the surface of described wafer is remained in the maintenance face of the chuck table of grinding attachment; And grinding process; in this grinding process; make the grinding face of the grinding grinding tool of rotation act on the back side of wafer that absorption remains in the maintenance face of described chuck table; thereby the back side of grinding wafer; the maintaining part with maintenance face of described chuck table is formed by the porous ceramic with a plurality of pores; described another face that is pasted on the described boundary belt of wafer surface forms has a plurality of concavo-convex matsurfaces; in a plurality of pores of described a plurality of concavo-convex porous ceramics that can be embedded into the maintaining part that constitutes described chuck table; keep in the operation at described wafer, make in a plurality of pores of a plurality of concavo-convex porous ceramics that are embedded into the maintaining part that constitutes described chuck table.
A plurality of concavo-convex about described another face of being formed at described boundary belt, the maximum height of surface roughness is set at more than the 5 μ m.In addition, the aperture area of a plurality of pores of porous ceramic that constitutes the maintaining part of described chuck table is set at 1mm
2Below, the area of section that is formed at the protuberance in described another face a plurality of concavo-convex of described boundary belt is set at 1mm
2Below.
In addition; according to the present invention; a kind of boundary belt is provided; when the maintaining part that remains in the chuck table of grinding attachment when the face side that will be formed with the wafer of device on the surface is come the back side of grinding wafer; in order to protect the surface of wafer; a face of described boundary belt is pasted on the surface of wafer; wherein; the chuck table of described grinding attachment possesses the described maintaining part that is formed by the porous ceramic with a plurality of pores; described boundary belt is characterised in that; another face of described boundary belt forms has a plurality of concavo-convex matsurfaces, in a plurality of pores of described a plurality of concavo-convex porous ceramics that can be embedded into the maintaining part that constitutes chuck table.
About described a plurality of concavo-convex, the maximum height of surface roughness is set at more than the 5 μ m.In addition, the area of section of described a plurality of protuberances in concavo-convex is set at 1mm
2Below.
In method of grinding wafer of the present invention; another face that is pasted on the boundary belt of wafer surface forms has a plurality of concavo-convex matsurfaces; in a plurality of pores of described a plurality of concavo-convex porous ceramics that can be embedded into the maintaining part that constitutes chuck table; keep in the operation at wafer; make in a plurality of pores of a plurality of concavo-convex porous ceramics that are embedded into the maintaining part that constitutes chuck table; therefore, increased frictional force, suppressed lateral shift with respect to maintaining part.Therefore, can prevent breaking of wafer that the lateral shift owing to boundary belt causes.
Description of drawings
Fig. 1 is the stereogram that is used to implement the grinding attachment of method of grinding wafer of the present invention.
Fig. 2 is as utilizing method of grinding wafer of the present invention to carry out the stereogram of optical device wafer of the wafer of grinding.
Fig. 3 is that the boundary belt in the method for grinding wafer of the present invention is pasted the key diagram of operation.
Fig. 4 is illustrated in the boundary belt that uses in the method for grinding wafer of the present invention with the surface roughness of sheet material with boundary belt is implemented the curve chart of the measurement result of the surface roughness after the blasting treatment with sheet material.
Fig. 5 is the key diagram that the wafer in the method for grinding wafer of the present invention keeps operation.
Fig. 6 is the key diagram of the grinding process in the method for grinding wafer of the present invention.
Fig. 7 is the key diagram that the boundary belt in the expression method of grinding wafer of the present invention is pasted other execution mode of operation.
Fig. 8 is the key diagram of other execution mode of the grinding process in the expression method of grinding wafer of the present invention.
Label declaration
2: device case; 3: the grinding unit; 31: mobile foundation; 32: main axle unit; 321: the main shaft housing; 322: rotary main shaft; 323: servo motor; 324: bearing; 4: emery wheel; 41: the supporting base of ring-type; 42: the grinding grinding tool; 5: grinding unit feed mechanism; 6: chuck table mechanism; 61: chuck table; 10: optical device wafer; 100: sapphire substrate; 11: boundary belt.
Embodiment
Below, with reference to accompanying drawing, the preferred implementation of method of grinding wafer of the present invention and boundary belt is elaborated.
Fig. 1 represents to be used to implement the stereogram of the grinding attachment of method for grinding of the present invention.
Grinding attachment shown in Figure 1 possesses whole with the device case shown in the label 2.This device case 2 has: the main part 21 of the rectangular shape of Yan Shening slenderly; And be arranged at the rearward end (among Fig. 1 for upper right side) of this main part 21 and the in fact vertical ground upstanding wall 22 of extension upward.At the front surface of upstanding wall 22, be provided with the pair of guide rails 221,221 of extending along the vertical direction.Be equipped with grinding unit 3 as the grinding member at this a pair of guide rail 221,221, this grinding unit 3 is assembled into and can moves at above-below direction.
Grinding attachment in the illustrated execution mode has grinding unit feed mechanism 5, and this grinding unit feed mechanism 5 makes above-mentioned grinding unit 3 move at above-below direction (direction vertical with the maintenance face of aftermentioned chuck table) along above-mentioned pair of guide rails 221,221.This grinding unit feed mechanism 5 possesses external thread rod 51, and this external thread rod 51 is equipped on the front side and in fact vertical the extension of upstanding wall 22.The upper end of this external thread rod 51 and bottom are supported to and can rotate freely by the shaft supporting part 52 and 53 that is installed on upstanding wall 22.Be equipped with impulse motor 54 as the drive source that is used to drive external thread rod 51 rotations at the shaft supporting part 52 of upside, the output shaft of this impulse motor 54 and external thread rod 51 are in transmission connection.Also be formed with the connecting portion (not shown) that rearward protrudes from its Width central portion in the rear surface of mobile foundation 31, be formed with the internal thread through hole that extends along vertical direction at this connecting portion, above-mentioned external thread rod 51 screws togather with this internal thread hole.Therefore, when impulse motor 54 was just changeing, mobile foundation 31 was that 3 declines of grinding unit are promptly advanced (carrying out grinding and feeding), and when impulse motor 54 counter-rotatings, mobile foundation 31 is that 3 risings of grinding unit promptly retreat.
In the illustrated grinding attachment, be equipped with chuck table mechanism 6 at the main part 21 of housing 2.Chuck table mechanism 6 possesses: chuck table 61; The cap assembly 62 of getting up will be covered around this chuck table 61; And be provided in the front side of this cap assembly 62 and the corrugated member 63 and 64 of rear side.Chuck table 61 is made of chuck table main body 611 and maintaining part 612, and this maintaining part 612 is equipped on the upper surface of this chuck table main body 611, and has the maintenance face that is used to keep machined object at the upper surface of this maintaining part 612.The maintaining part 612 that constitutes this chuck table 61 is formed by the porous ceramic with a plurality of pores, and is communicated with not shown aspiration means.In addition, the maintaining part 612 that is formed by porous ceramic preferably is set at 1mm with the aperture area of a plurality of pores
2Below.That is, the aperture area when a plurality of pores that are formed at maintaining part 612 surpasses 1mm
2The time, pore can be needed on the face that is ground of wafer in grinding process described later.Therefore, about the diameter of a plurality of pores of being formed at maintaining part 612, preferably set and become to make aperture area at 1mm
2Below.In addition, the periphery of the chuck table main body 611 of formation chuck table 61 in the illustrated embodiment radially is equipped with four magnet 613 that are used to keep the aftermentioned ring-shaped frame projectedly.The chuck table 61 of Gou Chenging rotates by not shown rotation drive member like this.In addition, chuck table 61 moves between machined object mounting zone 24 shown in Figure 1 and abrasive areas 25 by not shown chuck table mobile member, and abrasive areas 25 is opposed with the emery wheel 4 that constitutes above-mentioned main axle unit 32. Corrugated member 63 and 64 can be formed by the suitable material as canvas.The front end of corrugated member 63 is fixed in the front surface wall of main part 21, and the front end face of cap assembly 62 is fixed in the rear end of corrugated member 63.The front end of corrugated member 64 is fixed in the rear end face of cap assembly 62, and the front surface of the upstanding wall 22 of device case 2 is fixed in the rear end.Make chuck table 61 when the direction shown in the arrow 23a moves, corrugated member 63 stretches and corrugated member 64 is shunk, and makes chuck table 61 when the direction shown in the arrow 23b moves, and corrugated member 63 is shunk and corrugated member 64 stretches.
To using the grinding attachment that constitutes as described above to come the method for grinding at the back side of grinding wafer to describe.
Fig. 2 represents to utilize method of grinding wafer of the present invention to carry out the stereogram of the optical device wafer of grinding.In the optical device wafer 10 shown in Figure 2, be that the surperficial 100a of the sapphire substrate 100 of 600 μ m marks off a plurality of zones by the spacing track 101 that is clathrate ground and forms for example at thickness, the stacked epitaxial loayer that constitutes by gallium nitride compound semiconductor etc. in the zone that this marks off, thus optical device 102 formed.
About optical device wafer shown in Figure 2 10; at the back side of grinding sapphire substrate 100 100b (for example to form predetermined thickness; 50 μ m) time; as (a) of Fig. 3 with (b); for the optical device 102 of protecting the surperficial 100a that is formed at sapphire substrate 100, utilize bonding agent a face 11a of boundary belt 11 to be pasted on the surperficial 100a (boundary belt stickup operation) of sapphire substrate 100.This boundary belt 11 is that the synthetic resin sheet material of hard such as the PETG (PET), acrylate, polymethyl methyl esters of 0.5mm forms by thickness.In addition, another face 11b of boundary belt 11 forms has a plurality of concavo-convex matsurfaces, in a plurality of pores of described a plurality of concavo-convex porous ceramics that are embedded into the maintaining part 612 that constitutes above-mentioned chuck table 61.As form method at another face 11b of boundary belt 11, can use blasting treatment or Corona discharge Treatment with a plurality of concavo-convex matsurfaces.
(a) of Fig. 4 is the curve chart of measurement result of the surface roughness of expression PETG (PET) sheet material, and transverse axis is represented the surface direction of sheet material, longitudinal axis presentation surface roughness.According to Fig. 4 (a) as can be known: in the surface roughness of PETG (PET), arithmetic average roughness (Ra) is 0.016 μ m, and maximum height (Ry) is 0.14 μ m.Like this, if maximum height is the concavo-convex of 0.14 μ m, then be difficult to limit the lateral shift that produces when carrying out grinding in these concavo-convex a plurality of pores that are embedded into the maintaining part 612 that forms by porous ceramic.
(b) of Fig. 4 is the curve chart of representing the measurement result of the surface roughness after above-mentioned PETG (PET) the sheet material enforcement blasting treatment, and transverse axis is represented the surface direction of sheet material, longitudinal axis presentation surface roughness.According to Fig. 4 (b) as can be known: in the surface roughness of the PETG that has carried out blasting treatment (PET), arithmetic average roughness (Ra) is 0.909 μ m, and maximum height (Ry) is 5.668 μ m.Like this, if that to be 5 μ m above is concavo-convex for maximum height, then can limit the lateral shift that produces when carrying out grinding in these concavo-convex a plurality of pores that are embedded into the maintaining part 612 that forms by porous ceramic.In addition, in a plurality of pores for the porous ceramic that is embedded into the maintaining part 612 that constitutes above-mentioned chuck table 61, the area of section of above-mentioned a plurality of protuberances in concavo-convex is set at 1mm
2Below.
After having implemented above-mentioned boundary belt and having pasted operation, on the boundary belt 11 side mountings of optical device wafer 10 chuck table 61 that is positioned at machined object mounting zone 24 in the grinding attachment shown in Figure 1.Promptly; as shown in Figure 5; on the maintaining part 612 of chuck table 61, wherein, a face of described boundary belt 11 is pasted on the surperficial 100a of the sapphire substrate 100 that constitutes optical device wafer 10 with another face 11b (form and have a plurality of concavo-convex matsurfaces) mounting of boundary belt 11.Then, by making not shown aspiration means work, optical device wafer 10 is remained on (wafer maintenance operation) on the maintaining part 612 that is formed by porous ceramic through boundary belt 11 absorption.Therefore, remain in the optical device wafer 10 on the maintaining part 612 of chuck table 61, the back side 100b of sapphire substrate 100 becomes upside.When the boundary belt 11 of the surperficial 100a that like this a face is pasted on sapphire substrate 100 adsorbs on the maintaining part that is formed by porous ceramic 612 that remains to chuck table 61; because forming, another face 11b of boundary belt 11 has a plurality of concavo-convex matsurfaces; in described a plurality of concavo-convex a plurality of pores that can be embedded into the porous ceramic that forms maintaining part 612; so by making in a plurality of concavo-convex a plurality of pores that are embedded into porous ceramic; increased frictional force, therefore in the aftermentioned grinding process, suppressed lateral shift with respect to maintaining part.
After having implemented wafer maintenance operation as mentioned above, make not shown chuck table mobile member work, chuck table mechanism 6 is moved along the direction shown in the arrow 23a among Fig. 1, thereby will remain on the grinding area 25 that optical device wafer 10 on the chuck table 61 is positioned the below of emery wheel 4.In addition, be located in grinding position as illustrated in fig. 6,, constitute the center (P) of the grinding grinding tool 42 of emery wheel 4 by described optical device wafer 10 in this grinding position at the optical device wafer 10 that remains under this state on the chuck table 61.Like this, to remain in after optical device wafer 10 on the chuck table 61 is positioned grinding position, chuck table 61 direction shown in the arrow 61a in Fig. 6 is rotated with the rotary speed of for example 500rpm, and make emery wheel 4 on one side to the rotary speed rotation of the direction shown in the arrow 4a with for example 1000rpm, make on one side contacting with back side 100b of grinding grinding tool 42, make emery wheel 4 shown in arrow 4b, carry out the grinding and feeding (grinding process) of scheduled volume downwards with for example grinding and feeding speed of 0.1 μ m/ second as the sapphire substrate 100 of the formation optical device wafer 10 of machined surface as the grinding face of lower surface.Its result is, what optical device wafer 10 formed device finishes thickness (for example, 50 μ m).
In above-mentioned grinding process; a face of boundary belt 11 is pasted on the surperficial 100a that formation remains on the sapphire substrate 100 of the optical device wafer 10 on the chuck table 61 as described above; another face 11b at described boundary belt 11 is formed with a plurality of concavo-convex; in a plurality of pores of described a plurality of concavo-convex maintaining parts 612 that form by porous ceramic that are embedded into chuck table 61; thereby increased frictional force, therefore suppressed lateral shift with respect to maintaining part.Therefore, can prevent breaking of optical device wafer 10 that the lateral shift owing to boundary belt causes.In addition; in the illustrated embodiment; because boundary belt 11 is formed by the synthetic resin sheet material of hard such as PETG (PET), acrylate, polymethyl methyl esters; therefore so the distortion of horizontal direction (laterally) is few, can prevent the generation of breaking that causes because of lateral shift of optical device wafer 10.
The optical device wafer 10 of implementing grinding process as described above and forming predetermined thickness is pasted at boundary belt 11 under the state of surperficial 100a of sapphire substrate 100 by conveyance to subsequent processing, promptly for example implement the laser processing operation of laser processings along the spacing track 101 of optical device wafer 10.
Next, with reference to Fig. 7 and Fig. 8, other execution mode in the method for grinding wafer of the present invention is described.
In this embodiment, shown in Fig. 7 (a), boundary belt 11 is assemblied in the ring-shaped frame F that forms by stainless steel and other metal materials.Then, shown in Fig. 7 (b), the surperficial 100a that utilizes bonding agent will constitute the sapphire substrate 100 of optical device wafer 10 sticks on a face 11a (upper surface) (boundary belt stickup operation) of the boundary belt 11 that is assemblied in ring-shaped frame F.In addition, the boundary belt 11 that is assemblied in ring-shaped frame F is the same with above-mentioned boundary belt shown in Figure 3 11, is formed by the synthetic resin sheet material of hard such as PETG (PET), acrylate, polymethyl methyl esters.And another face 11b (lower surface) of boundary belt 11 forms has a plurality of concavo-convex matsurfaces, in a plurality of pores of described a plurality of concavo-convex porous ceramics that are embedded into the maintaining part 612 that constitutes above-mentioned chuck table 61.
Paste the optical device wafer 10 of operation about having implemented above-mentioned boundary belt, as illustrated in fig. 8 with boundary belt 11 side mountings to chuck table 61.At this moment, the ring-shaped frame F that is equipped with boundary belt 11 is positioned on four magnet 613, and by the adsorbed maintenance of the magnetic force of four magnet 613, described four magnet 613 are provided in the periphery of the chuck table main body 611 that constitutes chuck table 61.Then, by making not shown aspiration means work, optical device wafer 10 is remained on (wafer maintenance operation) on the maintaining part 612 that is formed by porous ceramic through boundary belt 11 absorption.When the boundary belt 11 of the surperficial 100a (face) that like this a face is pasted on sapphire substrate 100 adsorbs on the maintaining part that is formed by porous ceramic 612 that remains to chuck table 61; because forming, another face 11b of boundary belt 11 has a plurality of concavo-convex matsurfaces; in described a plurality of concavo-convex a plurality of pores that can be embedded into the porous ceramic that forms maintaining part 612; so by making in a plurality of concavo-convex a plurality of pores that are embedded into porous ceramic; increased frictional force, therefore suppressed lateral shift with respect to maintaining part.
Then, as shown in Figure 8, be positioned remain on optical device wafer 10 on the chuck table 61 for the grinding area of the below of emery wheel 4, make chuck table 61 to the rotary speed rotation of the direction shown in the arrow 61a with for example 500rpm, and make emery wheel 4 on one side to the rotary speed rotation of the direction shown in the arrow 4a with for example 1000rpm, make on one side contacting with back side 100b of grinding grinding tool 42, make emery wheel 4 shown in arrow 4b, carry out the grinding and feeding (grinding process) of scheduled volume downwards with for example grinding and feeding speed of 0.1 μ m/ second as the sapphire substrate 100 of the formation optical device wafer 10 of machined surface as the grinding face of lower surface.Its result is, what optical device wafer 10 formed device finishes thickness (for example, 50 μ m).
Like this, implement grinding process and the optical device wafer 10 that forms predetermined thickness under the state that is pasted on the boundary belt 11 that is assemblied in ring-shaped frame F by conveyance to subsequent processing, promptly for example implement the laser processing operation of laser processing from rear side along the spacing track 101 of optical device wafer 10.
Claims (6)
1. method of grinding wafer, this method of grinding wafer is that grinding is carried out to form the method for grinding wafer of preset thickness in the back side of the wafer that is formed with device on the surface, it is characterized in that,
Described method of grinding wafer comprises following operation:
Boundary belt is pasted operation, pastes in the operation at this boundary belt, a face of boundary belt is pasted on the surface of wafer;
Wafer keeps operation, keeps in operation at this wafer, another face absorption of boundary belt that is pasted on the surface of described wafer is remained in the maintenance face of the chuck table of grinding attachment; And
Grinding process in this grinding process, makes the grinding face of the grinding grinding tool of rotation act on the back side of wafer that absorption remains in the maintenance face of described chuck table, thus the back side of grinding wafer,
The maintaining part with maintenance face of described chuck table is formed by the porous ceramic with a plurality of pores,
Described another face that is pasted on the described boundary belt of wafer surface forms has a plurality of concavo-convex matsurfaces; in a plurality of pores of described a plurality of concavo-convex porous ceramics that can be embedded into the maintaining part that constitutes described chuck table; keep in the operation at described wafer, make in a plurality of pores of a plurality of concavo-convex porous ceramics that are embedded into the maintaining part that constitutes described chuck table.
2. method of grinding wafer according to claim 1, wherein,
A plurality of concavo-convex about described another face of being formed at described boundary belt, the maximum height of surface roughness is set at more than the 5 μ m.
3. method of grinding wafer according to claim 1 and 2, wherein,
The aperture area of a plurality of pores of porous ceramic that constitutes the maintaining part of described chuck table is set at 1mm
2Below, the area of section that is formed at the protuberance in described another face a plurality of concavo-convex of described boundary belt is set at 1mm
2Below.
4. boundary belt; when the maintaining part that remains in the chuck table of grinding attachment when the face side that will be formed with the wafer of device on the surface is come the back side of grinding wafer; in order to protect the surface of wafer; a face of described boundary belt is pasted on the surface of wafer; wherein; the chuck table of described grinding attachment possesses the described maintaining part that is formed by the porous ceramic with a plurality of pores, and described boundary belt is characterised in that
Another face of described boundary belt forms has a plurality of concavo-convex matsurfaces, in a plurality of pores of described a plurality of concavo-convex porous ceramics that can be embedded into the maintaining part that constitutes chuck table.
5. boundary belt according to claim 4, wherein,
About described a plurality of concavo-convex, the maximum height of surface roughness is set at more than the 5 μ m.
6. according to claim 4 or 5 described boundary belts, wherein,
The area of section of described a plurality of protuberances in concavo-convex is set at 1mm
2Below.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009172302A JP2011029331A (en) | 2009-07-23 | 2009-07-23 | Method for grinding wafer and protective tape |
| JP2009-172302 | 2009-07-23 |
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| Publication Number | Publication Date |
|---|---|
| CN101964306A true CN101964306A (en) | 2011-02-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102360554A Pending CN101964306A (en) | 2009-07-23 | 2010-07-22 | Wafer grinding method and protection belt |
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| JP (1) | JP2011029331A (en) |
| CN (1) | CN101964306A (en) |
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| CN105252365A (en) * | 2014-07-11 | 2016-01-20 | 株式会社迪思科 | Grinding device, protective belt pasting method and protective belt |
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| CN110534459A (en) * | 2019-08-09 | 2019-12-03 | 河源市众拓光电科技有限公司 | Integral type thinning device |
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| CN101407035A (en) * | 2007-10-10 | 2009-04-15 | 株式会社迪思科 | Grinding method for wafer |
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| US20010049256A1 (en) * | 2000-05-31 | 2001-12-06 | Kazuhisa Arai | Semiconductor wafer assembly and machining apparatus having chuck tables for holding the same |
| US20070190908A1 (en) * | 2006-02-13 | 2007-08-16 | Oki Electric Industry Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
| US20080003932A1 (en) * | 2006-07-03 | 2008-01-03 | Chung-Chih Feng | Sheet for mounting polishing workpiece and method for making the same |
| CN101138833A (en) * | 2006-09-05 | 2008-03-12 | 住友电气工业株式会社 | Group iii nitride substrate and manufacturing method of group iii nitride substrate |
| CN101407035A (en) * | 2007-10-10 | 2009-04-15 | 株式会社迪思科 | Grinding method for wafer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105252365A (en) * | 2014-07-11 | 2016-01-20 | 株式会社迪思科 | Grinding device, protective belt pasting method and protective belt |
| CN105252365B (en) * | 2014-07-11 | 2019-03-08 | 株式会社迪思科 | Grinding attachment, protection band method of attaching and protection band |
| CN104282545A (en) * | 2014-10-15 | 2015-01-14 | 易德福 | Wafer grinding device |
| CN110030909A (en) * | 2018-01-11 | 2019-07-19 | 株式会社迪思科 | The evaluating apparatus of chip and the evaluation method of chip |
| CN110030909B (en) * | 2018-01-11 | 2022-09-09 | 株式会社迪思科 | Wafer evaluation device and wafer evaluation method |
| CN110534459A (en) * | 2019-08-09 | 2019-12-03 | 河源市众拓光电科技有限公司 | Integral type thinning device |
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