CN101964272B - Pressure switch based on micro-electromechanical system technology - Google Patents
Pressure switch based on micro-electromechanical system technology Download PDFInfo
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- CN101964272B CN101964272B CN2010102373003A CN201010237300A CN101964272B CN 101964272 B CN101964272 B CN 101964272B CN 2010102373003 A CN2010102373003 A CN 2010102373003A CN 201010237300 A CN201010237300 A CN 201010237300A CN 101964272 B CN101964272 B CN 101964272B
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Abstract
The invention relates to a pressure switch based on the micro-electromechanical system (MEMS) technology. The pressure switch comprises a base and a pipe cap, wherein the pipe cap is provided with a pressure leading mouth; the base is provided with a groove, the other end of the base is provided with a cable hole; a cable is arranged in the cable hole; a switching component is arranged in the groove and provided with a sensitive component; the switching component contains a supporting body which is provided with a lower diversion hole and conducting cylinders; the sensitive component contains a clamping body and a silicon wafer; the silicon wafer is provided with a metal layer, elastic slots are formed on the lower part of the silicon wafer; a boss is formed between the elastic slots, an upper electrode is arranged on the boss; the clamping body is provided with a diversion hole; the surfaces of the both ends of the clamping body and the inner wall of the upper diversion hole form a lower electrode; the lower electrode and the metal layer are separately electrically connected with the corresponding conducting cylinders on the supporting body through internal leads; and the conducting cylinders are electrically connected with connecting leads respectively. The pressure switch of the invention has simple structure, good consistency and low cost and is easy to be integrated with the following circuit for signal conditioning, signal conversion and networking, thus the pressure switch has wide application range.
Description
Technical field
The present invention relates to a kind of pressure switch, especially a kind of pressure switch based on the MEMS technology.
Background technology
Pressure switch is widely used in technical fields such as industry, agricultural, scientific research, building, space flight and aviation and military affairs.But mostly traditional pressure switch is the mechanical structure formula, has that volume is big, the property produced in batches is low, consistency is poor, is difficult for and deficiency such as subsequent conditioning circuit is integrated, so traditional pressure switch is replaced by electronic pressure switch.At present, be applied in the electronic pressure switch in the above-mentioned field, be mostly to adopt the line pressure transducer to come detected pressures, accomplish switching function when utilizing line pressure to reach rated value then.All the specific pressure switch is complicated, accurately but line pressure transducer is from complex process degree or the amount of information that from performance, comprised, add and must be equipped with comparison circuit, so cost is high, must not be and wastes one's talent on a petty job then.Because being close to ripe development, MEMS (Micro-Electro-Mechanical Systems) technology make silicon pressure sensor significant progress arranged in recent years in low cost, high-performance direction.Therefore, some forerunners have begun to utilize the research of MEMS fabrication techniques pressure switch, but the pressure switch of being reported is difficult to further apply owing to its rated operating pressure narrow range, only limit to the several applications field.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art; A kind of pressure switch based on the MEMS technology is provided; It is simple in structure, high conformity, with low cost, simple in structure, be easy to integrate with subsequent conditioning circuit, carry out signal condition, conversion and networking; Applied widely.
According to technical scheme provided by the invention, said pressure switch based on the MEMS technology comprises base and is positioned at the pipe cap on the base; Said pipe cap is provided with the impulse mouth corresponding to the other end that links to each other with base; Base is provided with groove corresponding to the end of contiguous pipe cap, and the other end of base is provided with cable aperture, and said cable aperture all is connected with groove, impulse mouth; Be provided with cable in the cable aperture; Be provided with adapter assembly in the said groove, said adapter assembly is provided with sensing assembly; Said adapter assembly comprises supporter, and the center of said supporter is provided with down pod apertures, and supporter is provided with conductive pole; Said sensing assembly comprises solid support body and is positioned at the silicon chip on the said solid support body; Said silicon chip is provided with metal level corresponding to the other end surface that links to each other with solid support body, and silicon chip is concaved with elastic groove corresponding to the end of contiguous solid support body, forms boss between said elastic groove, and said boss is provided with top electrode; Gu the center of support body is provided with pod apertures, last pod apertures is connected with following pod apertures; Gu the surface at support body two ends reaches the inwall of going up pod apertures and forms bottom electrode; Said bottom electrode and metal level are respectively through conductive pole electrical connection corresponding on lead and the supporter; Conductive pole corresponding is connected the lead electrical connection respectively with in the cable corresponding to the other end that links to each other with lead.
Said base is provided with securing member corresponding to the end that cable aperture is set; After one end of cable passes securing member, be fastened and connected with securing member.Be provided with sealing ring in the said securing member, said sealing ring is enclosed within on the cable.Said supporter is provided with the conduction cladding plate corresponding to the end that links to each other with silicon chip, is provided with insulator between said conduction cladding plate and conductive pole; Gu support body is electrically connected corresponding to end that bottom electrode is set and conduction cladding plate; Bottom electrode is electrically connected with corresponding conductive pole through conduction cladding plate and lead.Be provided with wireway in the said cable, an end of said wireway is positioned at groove, and is connected with last pod apertures and following pod apertures.
The inner peripheral surface of said groove is provided with some solid Zhi Taijie, and said adapter assembly is installed on the solid Zhi Taijie of groove.Said silicon chip is the n type single crystal silicon sheet.Said solid support body is PYREX glass or monocrystalline silicon.The material of said metal level is aluminium, copper, gold or silver-colored; Said metal level vapor deposition is on silicon chip.
Advantage of the present invention: sensing assembly comprises silicon chip, and silicon chip adopts the MEMS technology to form elastic groove and top electrode, forms E type flexible sheet, can make things convenient for and carry out integrated with subsequent conditioning circuit; Clearance height corresponding matching between the thickness of flexible sheet and top electrode and bottom electrode has determined the rated operating pressure of pressure switch.Air-flow gets into from the impulse mouth, and Pneumatic pipe cleaner is crossed metal level and acted on the silicon elastic groove, through the effect of cooperatively interacting of top electrode and bottom electrode, and outwards export through the connection lead in the cable, and the completion switching function, easy to use.There are not movable relatively parts, reliable operation, long service life in the sensing assembly.The pressure switch volume is little, helps making microminiaturization, and miniaturization or face paste the formula device, and sensing assembly adopts the MEMS technology to make, and can produce in enormous quantities, reduces production costs, and is applicable to every field.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the structural representation of sensing assembly of the present invention.
Fig. 3 is the structural representation of adapter assembly of the present invention.
Fig. 4 is the structural representation of base of the present invention.
Fig. 5 is the structural representation of cable of the present invention.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
Like Fig. 1～shown in Figure 5: the present invention includes sensing assembly 1; Adapter assembly 2; Base 3; Securing member 4; Sealing ring 5; Cable 6; Pipe cap 7; Lead 8; Impulse mouth 9; Connector 10; Silicon chip 11; Metal level 12; Spring beam 13; Top electrode 14; Electrode gap 15; Bottom electrode 16; Gu support body 17; Last pod apertures 18; Elastic groove 19; Boss 20; Following pod apertures 21; Insulator 22; Conduction cladding plate 23; Supporter 24; Conductive pole 25; Installing hole 26; Groove 27; Gu Zhi Taijie 28; Cable aperture 29; Binding thread 30; Connect lead 31 and wireway 32.
As shown in Figure 1: said base 3 is provided with the pipe cap 7 of fixed connection, and 7 of said base 3 and pipe caps form cavity structure.Pipe cap 7 is provided with connector 10 corresponding to the other end that links to each other with base 3; Said connector 10 is positioned at the center of pipe cap 7; Be provided with impulse mouth 9 in the connector 10, said impulse mouth 9 extends in the pipe cap 7 from the surface of connector 10, and impulse mouth 9 is connected with the cavity that base 3 and pipe cap 7 form.The structure of base 3, as shown in Figure 4.Said base 3 is provided with groove 27 corresponding to the end with contiguous pipe cap 7, and base 3 is provided with step corresponding to the other end away from groove 27; Base 3 is provided with the contiguous block of vertical distribution corresponding to the center that step is set, and is provided with cable aperture 29 in the said contiguous block, and said cable aperture 29 is connected with groove 27.Some steps are set on the inner peripheral surface of said groove 27, form solid Zhi Taijie 28.The adapter assembly 2 of fixed connection is installed on the said solid Zhi Taijie 28, and said adapter assembly 2 is provided with sensing assembly 1.
As shown in Figure 2: as to be the structural representation of sensing assembly 1 of the present invention.Said sensing assembly 1 comprises solid support body 17, and said solid support body 17 is provided with silicon chip 11.Said silicon chip 11 is a n type single crystal silicon; Silicon chip 11 is provided with metal level 12 corresponding to the surface of the other end that links to each other with solid support body 17, and said metal level 12 is close to impulse mouths 9, and is positioned at the below of impulse mouth 9.The material of said metal level 12 can be aluminium, copper, gold or silver-colored, but preferably adopts multiple layer metal, like nickel-chromium-Jin, platinum-titanium-Jin, nickel-copper-Jin or chromium-nickel-Yin.Said metal level 12 passes through vapor deposition on silicon chip 11.Silicon chip 11 is provided with elastic groove 19 corresponding to the end that links to each other with solid support body 17, and said elastic groove 19 extends upward 19 formation boss 20 of elastic groove from silicon chip 11 corresponding to the surface that links to each other with solid support body 17; Said boss 20 and elastic groove 19 corresponding cooperations make silicon chip 11 form the flexible sheet with E type structure.Said boss 20 is provided with top electrode 14, and the corresponding silicon chip 11 in said elastic groove 19 tops forms spring beam 13.Silicon chip 11 forms cavity structure corresponding to the bottom that elastic groove 19 is set.Gu the center of support body 17 is provided with pod apertures 18, Gu reaching to go up in the pod apertures 18, two end faces of support body 17 all are deposited with lower electrode material, Gu the lower electrode material of support body 17 both ends of the surface is electrically connected through the lower electrode material in the last pod apertures 18, form bottom electrode 16.Gu support body 17 is corresponding with the shape of top electrode 14 corresponding to the bottom electrode 16 of contiguous boss 20; Gu 14 of bottom electrode 16 on the support body 17 and top electrodes have electrode gap 15; Be full of air in the said electrode gap 15.
Silicon chip 11 is the monocrystalline silicon of N type high-concentration dopant, has extremely low resistivity.The thickness of silicon chip 11 is 200～1000 μ m; And silicon chip 11 carried out twin polishing.The thermal oxidation silicon layer of silicon chip 11 superficial growth one decks 0.5～1 μ m after polishing; Deposit one layer thickness is the silicon nitride layer of
on said thermal oxidation silicon layer again, forms hard mask between said thermal oxidation silicon and silicon nitride layer.Through shelter etching hard mask layer optionally, on silicon chip 11, obtain elastic groove 19 and boss 20 structures, thereby make silicon chip 11 form flexible sheet with E type structure.The cross section of said boss 20 can be for square or circular, and the lateral length of boss 20 is 500～2000 μ m.During etching, the silicon nitride of first etching elastic groove 19 and boss 20 belows, the silica on etching elastic groove 19 then.The etching depth of said elastic groove 19 is c, and then the silica of etching boss 20 belows, last again the silicon chip 11 of elastic groove 19 and boss 20 belows is carried out deep etching, and said etching depth is d, and said etching depth d is by the measuring range decision of pressure switch; Remaining silica and silicon nitride on the corrosion of silicon 11 more at last, the degree of depth of said etching depth d and elastic groove 19 parts has determined the rated operating pressure of pressure switch, the i.e. measurement range of pressure switch.At last, on away from the surface of consolidating support body 17 and boss 20, form metal layer, form metal level 12 and top electrode 14 respectively at silicon chip 11.
Gu support body 17 can also can be monocrystalline silicon for PYREX glass (Pyrex); On two surfaces of said solid support body 17, form metal layer through evaporation coating method; Solid support body 17 is carried out etching corresponding to the metal layer of the end face that links to each other with silicon chip 11, etch away solid support body 17 metal layer partly that links to each other with silicon chip 11; And make pod apertures 18 through the method for burn into laser drilling or ultrasonic punching in the center of solid support body 17; Then through plating hole technology; Metal lining layer in last pod apertures 18 is electrically connected the metal layer at solid support body 17 two ends, thereby forms bottom electrode 16 structures.Gu support body 17 is corresponding corresponding to the shape of bottom electrode 16 shapes of the end faces that link to each other with silicon chip 11 and top electrode 14.
When solid support body 17 is PYREX glass,, silicon chip 11 is fixed on the solid support body 17 Gu 11 of support body 17 and silicon chips pass through electrostatic bonding.When solid support body 17 is monocrystalline silicon,, become sensing assembly 1 Gu 11 of support body 17 and silicon chips close through silicon-silicon bond or gold-silicon bonding is fixed on silicon chip 11 on the solid support body 17.
As shown in Figure 3: said adapter assembly 2 comprises supporter 24, and the center of said supporter 24 is provided with down pod apertures 21.Supporter 24 is provided with installing hole 26 corresponding to the outer ring that pod apertures 21 is set down, and said installing hole 26 is two.For the ease of connecting, on the surface of supporter 24, be provided with conduction cladding plate 23, said conduction cladding plate 23 can be copper cladding plate or other metal level cladding plates.When supporter 24 was provided with conduction cladding plate 23, following pod apertures 21 extended to the surface of supporter 24 other ends from the surface of conduction cladding plate 23; Said installing hole 26 also extends to the surface of supporter 24 other ends from the surface of conduction cladding plate 23.Be provided with conductive pole 25 in the said installing hole 26, stretch out respectively outside the installing hole 26 at the two ends of said conductive pole 25. Conductive pole 25 and 23 of cladding plates of conduction are provided with insulator 22, and said insulator 22 is positioned at installing hole 26.Supporter 24 can also can be processed for firm nonmetallic materials for metal.Sintering has the conductive pole 25 of mutually insulated on supporter 24, and conduction cladding plate 23 is bonded on the supporter 24.
Said solid support body 17 is fixed on supporter 24 corresponding on the surface that conduction cladding plate 23 is set, Gu the last pod apertures 18 on the support body 17 is connected with following pod apertures 21 on the supporter 24.Gu support body 17 corresponding to the surface that bottom electrode 16 is set through conducting resinl bonding or welding the method bonding or be welded on the conduction cladding plate 23.Gu the bottom electrode 16 of support body 17 ends is electrically connected with conduction cladding plate 23.Supporter 24 is fixed on the solid Zhi Taijie 28 in the base 3 corresponding to the other end that conduction cladding plate 23 is set, and the end of said conductive pole 25 is positioned at groove 27.A conductive pole 25 on the said supporter 24 is electrically connected through lead 8 and metal level 12; For another conductive pole 25 on the supporter 24 is electrically connected with bottom electrode 16, earlier conductive pole 25 is electrically connected through the conduction cladding plate 23 of lead 8 with conductive pole 25 1 sides.Because conduction cladding plate 23 is to be electrically connected with bottom electrode 16, thus conductive pole 25 with conduct electricity after cladding plate 23 is electrically connected, can reach being electrically connected of conductive pole 25 and bottom electrode 16.
Like Fig. 4 and shown in Figure 5: be provided with cable 6 in the said cable aperture 29, comprise in the cable 6 that two connect leads 31.The connection lead 31 of cable 6 one ends links to each other with corresponding conductive pole 25 respectively, and the other end of cable 6 passes cable aperture 29.Base 3 also is provided with securing member 4 corresponding to the end that cable aperture 29 is set, and is provided with sealing ring 5 in the said securing member 4; Said sealing ring 5 and securing member 4 are enclosed within on the cable 6.3 of securing member 4 and bases are through welding or thread connection, and cable 6 is fastened and connected with base 3 through securing member 4 and sealing ring 5, and can guarantee the sealing property of 7 of base 3 and pipe caps.When measuring the air pressure of little range, in order to improve certainty of measurement, in cable 6, establish wireway 32 can be set, said wireway 32 and groove 27, down pod apertures 21 and on pod apertures 18 all be connected.Said base 3 also is provided with binding thread 30 corresponding to the end that cable aperture 29 is set, and is convenient to securing member 4 and carries out screw threads for fastening with base 3 and be connected.
Of Fig. 1～Fig. 5: during use, that the other end of cable 6 connecting lead wires 31 is continuous with corresponding link respectively.During work, air-flow gets into from impulse mouth 9 and since metal level 12 be positioned at impulse mouth 9 under; After air-flow got into the cavity of pipe cap 7 and 3 formation of base from impulse mouth 9, air-flow can produce pressure to metal level 12.Silicon chip 11 is highly doped n type single crystal silicon, and resistivity is low, so metal level 12 has the electromotive force that equates with top electrode 14.12 of elastic groove 19 and metal levels form spring beam 13, and when air pressure produced pressure to metal level 12, spring beam 13 can produce deformation, and said top electrode 14 has corresponding variation with the electrode gap 15 of 16 of bottom electrodes.When the pressure of the air-flow that gets into from impulse mouth 9 equaled the rated value of pressure switch greater than fire, said top electrode 14 and bottom electrode 16 pitch smaller can outwards be exported corresponding signal until producing electric contact.Top electrode 14 links to each other with corresponding conductive pole 25 through metal level 12, lead 8; Bottom electrode 16 links to each other with corresponding conductive pole 25 through conduction cladding plate 23, lead 8; Therefore the variation of 16 of top electrode 14 and bottom electrodes; Can outwards export corresponding signal through conductive pole 25 and cable 6, thereby make the pressure switch conducting.When top electrode 14 moved downward under by the effect of measuring pressure, the gas in the electrode gap 15 can be through last pod apertures 18, pod apertures 21 and wireway 32 are discharged into the outside down, can not move downward the generation resistance to top electrode 14.To the wide range pressure switch, wireway 32 is not set in cable 6, the outside resistance that is produced that can not be discharged into by the body of calming the anger in the electrode gap 15 will be much smaller than by measuring pressure, and its influence can be ignored.The structure that forms elastic groove 19 and boss 20 on the said silicon chip 11 adopts the MEMS technology, and is easy to operate.Through the different etching depth of elastic groove 19 is set, can access different elasticity beam 13, thereby can access the working range of different pressure switches.
Sensing assembly 1 of the present invention comprises silicon chip 11, and silicon chip 11 adopts the MEMS technology to form elastic groove 19 and top electrode 14, forms E type flexible sheet, can make things convenient for and carry out integrated with subsequent conditioning circuit; The clearance height corresponding matching that the thickness of flexible sheet and top electrode 14 and bottom electrode are 16 has determined the rated operating pressure of pressure switch, and measuring range is wide, and the highest measurement range can reach 80MPa.Air-flow gets into from impulse mouth 9, and gas pressure through the cooperatively interact effect of top electrode 14 with bottom electrode 16, and passes through cable 6 interior connection leads 31 and outwards exports on metal level 12, changes the on off state of pressure switch, and is easy to use.There are not movable relatively parts, reliable operation, long service life in the sensing assembly 1.The pressure switch volume is little, helps making microminiaturization, and miniaturization or face paste the formula device; Sensing assembly adopts the MEMS technology to make; Can produce in enormous quantities, reduce production costs, go in the fields such as industry, agricultural, scientific research, building, Aero-Space and military affairs.Simple in structure, high conformity, with low cost, be easy to integrate with subsequent conditioning circuit, carry out signal condition, conversion and networking.
Claims (9)
1. the pressure switch based on the MEMS technology comprises base (3) and is positioned at the pipe cap (7) on the base (3); Said pipe cap (7) is provided with impulse mouth (9); Impulse mouth (9) and base (3) are positioned at the two ends of said pipe cap (7); Base (3) is provided with groove (27) corresponding to the end of contiguous pipe cap (7), and the other end of base (3) is provided with cable aperture (29), and said cable aperture (29) all is connected with groove (27), impulse mouth (9); Be provided with cable (6) in the cable aperture (29); It is characterized in that: be provided with adapter assembly (2) in the said groove (27), said adapter assembly (2) is provided with sensing assembly (1); Said adapter assembly (2) comprises supporter (24), and the center of said supporter (24) is provided with down pod apertures (21), and supporter (24) is provided with conductive pole (25); Said sensing assembly (1) comprises solid support body (17) and is positioned at the silicon chip (11) on the said solid support body (17); Said silicon chip (11) is provided with metal level (12), and metal level (12) and solid support body (17) are positioned at the two ends of said silicon chip (11); Silicon chip (11) is concaved with elastic groove (19) corresponding to the end of contiguous solid support body (17), forms boss (20) between said elastic groove (19), and said boss (20) is provided with top electrode (14); Gu the center of support body (17) is provided with pod apertures (18), last pod apertures (18) is connected with following pod apertures (21); Gu the surface at support body (17) two ends reaches the inwall of going up pod apertures (18) and forms bottom electrode (16); Said bottom electrode (16) and metal level (12) are gone up corresponding conductive pole (25) through lead (8) and supporter (24) respectively and are electrically connected; Conductive pole (25) is electrically connected with the interior lead (31) that is connected of cable (6), and cable (6) and lead (8) are positioned at the two ends of said conductive pole (25).
2. according to the said pressure switch based on the MEMS technology of claim 1, it is characterized in that: said base (3) is provided with securing member (4) corresponding to the end that cable aperture (29) is set; After one end of cable (6) passes securing member (4), and be fastened and connected with securing member (4).
3. according to the said pressure switch based on the MEMS technology of claim 2, it is characterized in that: be provided with sealing ring (5) in the said securing member (4), said sealing ring (5) is enclosed within on the cable (6).
4. according to the said pressure switch based on the MEMS technology of claim 1, it is characterized in that: said supporter (24) is provided with conduction cladding plate (23) corresponding to the end that links to each other with silicon chip (11), is provided with insulator (22) between said conduction cladding plate (23) and conductive pole (25); Gu support body (17) is electrically connected corresponding to end that bottom electrode (16) is set and conduction cladding plate (23); Bottom electrode (16) is electrically connected with corresponding conductive pole (25) through conduction cladding plate (23) and lead (8).
5. according to the said pressure switch based on the MEMS technology of claim 1, it is characterized in that: be provided with wireway (32) in the said cable (6), an end of said wireway (32) is positioned at groove (27), and is connected with last pod apertures (18) and following pod apertures (21).
6. according to the said pressure switch based on the MEMS technology of claim 1, it is characterized in that: the inner peripheral surface of said groove (27) is provided with some solid Zhi Taijie (28), and said adapter assembly (2) is installed on the solid Zhi Taijie (28) of groove (27).
7. according to the said pressure switch based on the MEMS technology of claim 1, it is characterized in that: said silicon chip (11) is the n type single crystal silicon sheet.
8. according to the said pressure switch based on the MEMS technology of claim 1, it is characterized in that: said solid support body (17) is PYREX glass or monocrystalline silicon.
9. according to the said pressure switch based on the MEMS technology of claim 1, it is characterized in that: the material of said metal level (12) is aluminium, copper, gold or silver-colored; Said metal level (12) vapor deposition is on silicon chip (11).
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| CN2010102373003A CN101964272B (en) | 2010-07-22 | 2010-07-22 | Pressure switch based on micro-electromechanical system technology |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9515579B2 (en) | 2010-11-15 | 2016-12-06 | Digitaloptics Corporation | MEMS electrical contact systems and methods |
| CN106163979B (en) * | 2013-11-11 | 2018-08-28 | 数字光学Mems公司 | MEMS electric contact system and method |
| CN104360102B (en) * | 2014-11-28 | 2017-03-08 | 中北大学 | The no pressure resistance type MEMS high-range acceleration transducer of lead and its manufacture method |
| CN104406724B (en) * | 2014-12-10 | 2017-09-26 | 中国航天空气动力技术研究院 | Force cell |
| CN108074776B (en) * | 2016-11-14 | 2019-12-17 | 昆山汉唐传感技术有限公司 | normally-closed pressure switch and preparation method thereof |
| CN109859986A (en) * | 2019-01-31 | 2019-06-07 | 王伟 | A kind of single-pole double throw sensing assembly based on MEMS technology and the pressure switch containing the sensing assembly |
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| JP2008262863A (en) * | 2007-04-13 | 2008-10-30 | Tokai Rika Co Ltd | Mems switch and integrated circuit equipped with it |
| EP1335878B1 (en) * | 2000-11-07 | 2009-02-18 | Robert Bosch Gmbh | Microstructure component |
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| US5004876A (en) * | 1988-12-20 | 1991-04-02 | Texas Instruments Incorporated | Pressure responsive switch particularly adaptable for operation as a normally open or a normally closed switch |
| CN2288500Y (en) * | 1996-10-09 | 1998-08-19 | 代子猷 | Liquid (gas) pressure-sensitive switch |
| EP1335878B1 (en) * | 2000-11-07 | 2009-02-18 | Robert Bosch Gmbh | Microstructure component |
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| TR01 | Transfer of patent right |
Effective date of registration: 20191226 Address after: 211100 No. 19 Shengli Road, Jiangning economic and Technological Development Zone, Jiangsu, Nanjing Patentee after: Nanjing ECH Technology Co.,Ltd. Address before: 211100 C2-3 building, Hongfeng science and Technology Park, Nanjing economic and Technological Development Zone, Jiangsu, 5 Patentee before: Nanjing Manjiali Electronic Technology Co. Ltd. |