CN103196613B - A kind of high-temperature CMUT pressure sensor and preparation method thereof - Google Patents
A kind of high-temperature CMUT pressure sensor and preparation method thereof Download PDFInfo
- Publication number
- CN103196613B CN103196613B CN201310084858.6A CN201310084858A CN103196613B CN 103196613 B CN103196613 B CN 103196613B CN 201310084858 A CN201310084858 A CN 201310084858A CN 103196613 B CN103196613 B CN 103196613B
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- silicon
- layer
- silicon nitride
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a kind of high-temperature CMUT pressure sensor and preparation method thereof, its one-piece construction is followed successively by from top to bottom: the first silicon carbide layer, the first silicon nitride layer, the second silicon carbide layer, the second silicon nitride layer and the 3rd silicon carbide layer; First silicon nitride layer, the second silicon carbide layer and second silicon nitride layer peripheral part and center section are all separated in a lateral direction by cavity; Through hole runs through the 3rd silicon carbide layer; Described second silicon nitride layer center section covers the inside surface with through hole on the upside of the 3rd silicon carbide layer; Silicon nitride layer inside surface is in through-holes coated with electrical connection metal level to be formed with bottom electrode and be electrically connected; Effectively reduce the impact of charging phenomenon on working sensor performance; Effectively reduce stray capacitance and the impact on sensor detection sensitivity thereof in hot environment; The symmetrical structure design adopting silicon carbide layer and silicon nitride layer to replace to effectively reduce in hot environment temperature stress to the impact of sensor measurement degree of accuracy.
Description
Technical field
The invention belongs to MEMS technology field, relate to a kind of pressure-detecting device, particularly one and relate to a kind of high-temperature CMUT pressure sensor and preparation method thereof.
Background technology
Low-pressure detects the demand that to be all widely used in fields such as Industry Control, space probation, health care and semiconductor machining, is a ultimate challenge of pressure sensing technologies.At present, the silicon micropressure sensor research based on MEMS technology is more, mainly can be divided into pressure resistance type, electric capacity and resonant micro-pressure force snesor.Relative to condenser type and pressure resistance type micropressure sensor, resonant mode has more advantage; As measuring accuracy, stability and resolving power are all better than other two kinds; Resonant transducer exports as digital signal in addition, and antijamming capability is strong, is convenient to transmission.The micropressure sensor based on CMUT structure that resonant silicon micropressure sensor can be divided into again common beam type and occur in recent years.CMUT micropressure sensor, except the Common advantages with resonance type pressure sensor, has firmer, reliable structure relative to beam type micropressure sensor, is more suitable for for pressure detection in rugged surroundings.Due to one of Research Challenges that high-temperature severe environment is current silicon micropressure sensor sensor, the many low-pressures that realizes under routine temperature environment (as being less than 120 DEG C) of common micropressure sensor detect.
Because CMUT is using silicon and silicon base compound as stock, drive as basic driver mode using electrostatic, the sensor that the frequency change caused with pressure detects to realize slight pressure, its application in hot environment must consider the impact of following factor: the first, the electrical property of common monocrystalline silicon, polycrystalline silicon material and mechanical property respectively 250 DEG C and 600 DEG C with upper variation; The second, along with the rising of temperature, the foreign ion mobility of insulation course, cavity pillar becomes large, and CMUT stray capacitance becomes large, thus can reduce detection sensitivity; 3rd, along with temperature raises, electric insulation layer charging phenomenon strengthens, and voltage breakdown can diminish, and electric insulation layer punctures possibility and increases; 4th, because the thermal expansivity of CMUT structure element is different, thus can cause larger temperature stress, thus the error of pressure detection can be caused to increase, thus need rational Material selec-tion and structural design to reduce the impact on sensor measurement performance of temperature stress as far as possible.
Summary of the invention
The object of the invention is to propose a kind of high-temperature CMUT pressure sensor and preparation method thereof, can effectively reduce temperature stress in hot environment, stray capacitance and electric insulation layer charging phenomenon are on the impact of working sensor performance, and the low pressure (<10kPa) realized under hot environment detects.
For achieving the above object, the technical solution used in the present invention is as follows:
A kind of high-temperature CMUT pressure sensor, its one-piece construction is followed successively by from top to bottom: the first silicon carbide layer, the first silicon nitride layer, the second silicon carbide layer, the second silicon nitride layer and the 3rd silicon carbide layer; First silicon nitride layer, the second silicon carbide layer and the second silicon nitride layer are divided into center section and peripheral part, and peripheral part and center section are all separated in a lateral direction by cavity; Peripheral part of first silicon nitride layer, the second silicon carbide layer, the second silicon nitride layer forms the sidewall of cavity, and the first silicon carbide layer and the 3rd silicon carbide layer are respectively top and the bottom of cavity, cavity sidewalls together with cavity bottom, top by cavities seals; First silicon carbide layer forms top electrode through ion doping, and the center section of the second silicon carbide layer forms bottom electrode through ion doping; The lateral dimension of described first silicon nitride layer center section is less than the lateral dimension of the second silicon carbide layer center section, and be provided with through hole in the middle of the 3rd silicon carbide layer, through hole runs through the 3rd silicon carbide layer, and through hole lateral dimension is less than the lateral dimension of bottom electrode; Described second silicon nitride layer center section covers the inside surface with through hole on the upside of the 3rd silicon carbide layer; Silicon nitride layer inside surface is in through-holes coated with electrical connection metal level, and electrical connection metal level top is formed with bottom electrode and is electrically connected; The material of described first silicon carbide layer, the second silicon carbide layer and the 3rd silicon carbide layer can be changed to adamas, and the material of the first silicon nitride layer and the second silicon nitride layer can be changed to silicon dioxide.
Described first silicon nitride layer center section thickness is less than the thickness of peripheral part of the first silicon nitride layer.
The central point of corresponding first silicon carbide layer of central point of described first silicon nitride layer center section.
The lateral dimension of described second silicon nitride layer peripheral part is identical with the lateral dimension of first silicon nitride layer peripheral part, and is symmetrically distributed in the both sides of the second silicon carbide layer.
Described second silicon nitride layer center section is ring-type, and its outside lateral dimension is less than the lateral dimension of bottom electrode.
Described first silicon nitride layer center section, the second silicon carbide layer center section, the second silicon nitride layer center section, through hole, metal electric articulamentum are symmetrical about same central shaft.
First, second silicon carbide layer described can be changed to corresponding diamond layer or other similar materials, and described silicon nitride layer can be changed to corresponding silicon dioxide layer or other similar materials.
A preparation method for high-temperature CMUT pressure sensor, comprises the following steps:
(1) get a P or N-type silicon carbide plate, adopt deep reaction ion etching technology etching through hole in the middle part of this silit, this through hole runs through this silicon carbide plate, now forms the 3rd silicon carbide layer;
(2) in the 3rd silicon carbide layer upper surface and middle through-hole inside surface deposited silicon nitride layer thereof; Get a monocrystalline silicon or polysilicon chip as the first substrate silicon, surface deposition silicon carbide layer thereon simultaneously;
(3) silicon nitride layer of photoetching, etching the 3rd silicon carbide layer upper surface forms the second silicon nitride layer, and it is divided into peripheral part and center section, and center section is for covering the 3rd silicon nitride layer upper surface middle part and whole through-hole inner surface part; Local doping techniques is adopted to metallize the silicon carbide layer central region of the first substrate silicon upper surface; Adopt the silicon carbide layer upper surface in chemical Mechanical Polishing Technique polishing second silicon nitride layer and the first substrate silicon;
(4) by the silicon carbide layer bonding in the second silicon nitride layer of the 3rd silicon carbide layer upper surface and the first substrate silicon, the silicon carbide layer wherein in the first substrate silicon upper, the second silicon nitride layer under;
(5) etch away the first substrate silicon, discharge the silicon carbide layer in the first substrate silicon, and adopt its surface of chemical Mechanical Polishing Technique polishing;
(6) deposited silicon nitride layer on the silicon carbide layer coming from the first substrate silicon;
(7) silicon nitride layer that secondary photoetching, etching come from the silicon carbide layer of the first substrate silicon, it is made to form the first silicon nitride layer, intermediate portion is divided into comparatively zonule, and thickness is less than the thickness of peripheral part silicon nitride layer, the lateral dimension of peripheral part silicon nitride layer is identical with the lateral dimension of second silicon nitride peripheral part; Get another monocrystalline silicon or polysilicon chip as the second substrate silicon, surface deposition silicon carbide layer thereon simultaneously;
(8) photoetching, etching come from the silicon carbide layer of the first substrate silicon, and make it form the second silicon carbide layer, its central region is electrode, and peripheral part is non-doped silicon carbide; The silicon carbide layer adopting ion doping technique to adulterate in the second substrate silicon, makes it form the first silicon carbide layer;
(9) chemical Mechanical Polishing Technique polishing first silicon carbide layer and the first silicon nitride layer upper surface is adopted, and by the two vacuum bonding, wherein the first silicon carbide layer is upper, first silicon nitride layer under, now peripheral part composition cavity sidewalls of the first silicon nitride layer, the second silicon carbide layer and the second silicon nitride layer, first silicon carbide layer and the 3rd silicon carbide layer are respectively cavity top and bottom, sidewall together with top, bottom by cavities seals;
(10) the second substrate silicon for depositing the first silicon carbide layer is etched away, discharge the first silicon carbide layer, simultaneously silicon nitride layer inside surface sputtering refractory metal layer in through-holes, metal level top is formed with the central region of the second silicon carbide layer and is electrically connected, and metal level sidewall covers on the inwall of silicon nitride layer in through hole.
In step (10), in through hole, the refractory metal layer of sputtering is nickel dam or manganese layer.
High-temperature CMUT pressure sensor of the present invention and preparation method thereof has following advantage at least:
(1) in conventional CMUT structure, because electric insulation layer covers whole bottom electrode upper surface, charge layer is there is at the interface of electric insulation layer surface or itself and bottom electrode or electric insulation layer inside when upper, electrode forms highfield, also be electric insulation layer charging phenomenon, it can affect DC offset voltage working point and the serviceability of CMUT; And electric insulation layer lateral dimension, much smaller than bottom electrode lateral dimension, effectively reduces the impact of charging phenomenon on working sensor performance in the present invention.
(2) in conventional CMUT structure, because covering whole substrate as bottom electrode by whole monocrystal silicon substrate as bottom electrode or metal electrode layer, cavity sidewalls part between bottom electrode and top electrode then forms stray capacitance, and because monocrystalline silicon or polycrystalline silicon material conductive capability strengthen during high temperature, stray capacitance becomes large.And in the present invention, bottom electrode is positioned at cavity inside, and and sidewall, electricity is isolated completely between the 3rd silicon carbide layer, effectively reduces stray capacitance and the impact on sensor detection sensitivity thereof in hot environment.
(3) the symmetrical structure design that the present invention adopts silicon carbide layer and silicon nitride layer to replace to effectively reduce in hot environment temperature stress to the impact of sensor measurement degree of accuracy.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is preparation method's process flow diagram of the present invention;
Number in the figure is specifically expressed as follows:
Embodiment
Describe the present invention below in conjunction with accompanying drawing:
As shown in Figure 1, general structure of the present invention is followed successively by from top to bottom: the first silicon carbide layer 1, first silicon nitride layer 4, second silicon carbide layer 2, second silicon nitride layer the 5, three silicon carbide layer 3.Wherein the first silicon nitride layer 4, second silicon carbide layer 2, second silicon nitride layer 5 is divided into peripheral part and center section, and peripheral part and center section are all separated in a lateral direction by cavity 14.The sidewall of peripheral part composition cavity 14 of the first silicon nitride layer 4, second silicon carbide layer 2, second silicon nitride layer 5, first silicon carbide layer 1 and the 3rd silicon carbide layer 3 are respectively top and the bottom of cavity, the sidewall of cavity 14 and the first silicon carbide layer 1 together with the 3rd silicon carbide layer 3 by cavities seals.The material of described first, second, third silicon carbide layer 1,2,3 can be changed to adamas or other similar materials, and first, second silicon nitride layer 4,5 can be changed to silicon dioxide or other similar materials.
First silicon carbide layer 1 is pressure-sensing device, after ion doping or local ion doping, be used as top electrode, and top electrode lateral dimension is with should to reduce collapse voltage, increase mechanical-electric coupling efficiency for principle.The size of the first silicon carbide layer 1 should consider the factors such as electrodes conduct performance, CMUT frequency of operation, pressure detection sensitivity.
Described second silicon carbide layer 2 can be divided into center section 7 and peripheral part 6, intermediate portion 7 is used as bottom electrode after ion doping, its peripheral part 6 is non-doped silicon carbide layer, center section 7 and peripheral part 6 are separated by cavity 14 in a lateral direction, the electricity realized between center section 7 and peripheral part 6 completely cuts off, and avoids in hot environment because of stray capacitance that peripheral part 6 causes.Center section 7 size of the second silicon carbide layer 2 should with good electric conductivity and larger mechanical-electric coupling performance for principle of design.The thickness of the second silicon carbide layer 2 should stabilize to principle of design to keep good Stress match and planform.
Described first silicon nitride layer 4 is divided into center section 11 and peripheral part 10, described center section 11 and peripheral part 10 are separated by cavity 14, the thickness of center section 11 is less than the thickness of peripheral part 10, the thickness of peripheral part 10 decides the active electrode distance between top electrode in the first silicon carbide layer 1 and bottom electrode 7, and the thickness of center section 11 decides the maximum displacement of the first silicon carbide layer 1 central point.The central point of corresponding first silicon carbide layer 1 of the central point of described first silicon nitride layer center section 11, for preventing the electrical contact of top electrode in the first silicon carbide layer 1 and bottom electrode 7; The lateral dimension of described first silicon nitride layer 4 center section 11, much smaller than the lateral dimension of the second silicon carbide layer center section 7, is ideally an insulating point, reduces center section 11 charging phenomenon to the impact of working sensor performance to try one's best.
Described 3rd silicon carbide layer 3 is divided into intermediate throughholes 9 and silit base plate 8 two parts, wherein through hole 9 is in order to realize the electrical connection of bottom electrode 7, run through the 3rd silicon carbide layer 3 in a thickness direction, through hole 9 lateral dimension should be less than the lateral dimension of bottom electrode 7, and the thickness of silit base plate 8 should ensure the stability of structure in temperature variation.
Described second silicon nitride layer 5 be divided into center section 12 and peripheral part 13, center section 12 covers the inside surface of silit base plate 8 center section and through hole 9, for the electrical isolation realizing base plate 8 and bottom electrode 7 and be electrically connected between metal level 15.The lateral dimension of second silicon nitride layer peripheral part 13 is identical with the lateral dimension of first silicon nitride layer peripheral part 10, and be symmetrically distributed in the both sides of the second silicon nitride layer 6, to realize the symmetry of thermal stress, reduce the malformation of CMUT in temperature environment as far as possible.Second silicon nitride layer 5 gauge should ensure that good insulating property are simultaneously as far as possible little.Base plate 8 upper portion that is positioned at of the second silicon nitride layer center section 12 is ring-type, its inner transversal dimension is that through hole 9 size deducts through hole 9 inside surface silicon nitride layer gauge, outside lateral dimension should be less than the lateral dimension of bottom electrode 7 as far as possible, to reduce thermal stress mismatch between bottom electrode 7 and the second silicon nitride layer center section 12 to the impact of bottom electrode 7 shape, the strength of joint that bottom electrode 7 and silit base plate 8 are good should be ensured simultaneously.
Described electrical connection metal level 15 covers the inside surface of silicon nitride layer on through hole 9, and its top is formed with bottom electrode 7 and is electrically connected, and the thickness of metal level 15 considers electrical connection properties, resistance and thermal stress three factors.
Peripheral part 10,6,13 of described first silicon nitride layer 4, second silicon carbide layer 2 and the second silicon nitride layer 5 forms the sidewall of cavity 14 jointly, first silicon carbide layer 1 and the 3rd silicon carbide layer 3 are as the top of cavity and bottom, and cavity 14 seals by sidewall together with top, bottom.
Described cavity 14 not only comprises the space segment between the first silicon carbide layer 1 and bottom electrode 7, also comprises the space segment between bottom electrode 7 and second silicon carbide layer peripheral part 6, between the 3rd silicon carbide layer 13 and the second silicon nitride layer center section 12.
Described first silicon nitride layer center section 11, second silicon carbide layer center section 7, second silicon nitride layer center section 12, through hole 9, metal electric articulamentum 15 are symmetrical about same central shaft.
As shown in Figure 2, preparation method of the present invention is described:
(1) get a P or N-type silicon carbide plate, adopt deep reaction ion etching technology etching through hole 9 in the middle part of this silit, this through hole 9 runs through this silicon carbide plate in a thickness direction, now forms the 3rd silicon carbide layer 3;
(2) in the 3rd silicon carbide layer 3 upper surface and middle through-hole 9 inside surface deposited silicon nitride layer 16 thereof; Get a monocrystalline silicon or polysilicon chip as the first substrate silicon 17, thereon surface deposition silicon carbide layer 18 simultaneously;
(3) photoetching, etch nitride silicon layer 16 form the second silicon nitride layer 5, and it is divided into peripheral part 13 and center section 12, and center section is for covering the 3rd silicon nitride layer 3 upper surface middle part and whole through hole 9 inner surface portion; Adopt local doping techniques to metallize silicon carbide layer 18 central region of the first substrate silicon 17 upper surface, this region is used as the second silicon carbide layer center section 7 in the future, also i.e. bottom electrode; Adopt silicon carbide layer 19 upper surface in chemical Mechanical Polishing Technique polishing second silicon nitride layer 5 and the first substrate silicon 17;
(4) by the second silicon nitride layer 5 and silicon carbide layer 19 bonding, wherein silicon carbide layer 19 is upper, the second silicon nitride layer 5 under;
(5) etch away the first substrate silicon 17, discharge the silicon carbide layer 19 in the first substrate silicon, and adopt its surface of chemical Mechanical Polishing Technique polishing;
(6) deposited silicon nitride layer 20 on silicon carbide layer 19;
(7) secondary photoetching, etch nitride silicon layer 20 make it form the first silicon nitride layer 4, intermediate portion 11 is comparatively zonule, and thickness is less than peripheral part silicon nitride layer 10, the lateral dimension of peripheral part silicon nitride layer 10 is identical with the lateral dimension of second silicon nitride peripheral part 13; Get another monocrystalline silicon or polysilicon chip as the second substrate silicon 21, thereon surface deposition silicon carbide layer 22 simultaneously;
(8) photoetching, etching silicon carbide layer 19, make it form the second silicon carbide layer 2, and its central region 7 is electrode, and peripheral part 6 is non-doped silicon carbide; The silicon carbide layer 22 adopting ion doping technique to adulterate on the second substrate 21, makes it form the first silicon carbide layer 1;
(9) chemical Mechanical Polishing Technique polishing first silicon carbide layer 1 and the first silicon nitride layer 4 upper surface is adopted, and by the two vacuum bonding, wherein the first silicon carbide layer 1 is upper, first silicon nitride layer 4 under, now peripheral part 10,6,13 of the first silicon nitride layer 4, second silicon carbide layer 2 and the second silicon nitride layer 5 forms cavity sidewalls, first silicon carbide layer 1 and the 3rd silicon carbide layer 3 are respectively top and the bottom of cavity 14, and cavity 14 seals by sidewall together with top, bottom;
(10) etch away the second substrate silicon 21, discharge the first silicon carbide layer 1; Silicon nitride layer inside surface sputtering nickel in through hole 9 or the layer of resistance to manganese 15, metal level top is formed with the central region 7 of the second silicon carbide layer 2 and is electrically connected, and metal level sidewall covers the inwall of silicon nitride layer in through hole 9.
In conjunction with above-mentioned embodiment, the reference configuration parameter of high-temperature CMUT pressure sensor of the present invention is:
The effective lateral dimension of first silicon carbide layer (silicon carbide layer part can be vibrated): 16 ~ 200 μm
Cavity height: 0.4 ~ 10 μm
Cavity maximum transverse size: 16 ~ 200 μm
The effective lateral dimension of bottom electrode: 16 ~ 200 μm
The reference performance index of high-temperature CMUT pressure sensor of the present invention is:
Measurement sensistivity: magnitude (10Hz/Pa ~ 100Hz/Pa).
Applicable temperature scope: 200 ~ 400 DEG C.
The present invention is not limited to described embodiment, film shape, the size of described CMUT structure, electrode shape, size, cavity size, high-temperature material used etc. can be determined according to specific performance demand, to improve functional reliability, the sensitivity of CMUT pressure sensor, reduce temperature stress simultaneously, between stray capacitance and electrode, electric insulation layer charging phenomenon is design and optimization aim on the impact of serviceability.
Claims (9)
1. a high-temperature CMUT pressure sensor, is characterized in that: its one-piece construction is followed successively by from top to bottom: the first silicon carbide layer (1), the first silicon nitride layer (4), the second silicon carbide layer (2), the second silicon nitride layer (5) and the 3rd silicon carbide layer (3); First silicon nitride layer (4), the second silicon carbide layer (2) and the second silicon nitride layer (5) are divided into center section and peripheral part, and peripheral part and center section are all separated in a lateral direction by cavity (14); Peripheral part of first silicon nitride layer (4), the second silicon carbide layer (2), the second silicon nitride layer (5) forms the sidewall of cavity (14), first silicon carbide layer (1) and the 3rd silicon carbide layer (3) are respectively top and the bottom of cavity, and cavity (14) seals by cavity sidewalls together with cavity bottom, top; First silicon carbide layer (1) forms top electrode through ion doping, and the second silicon carbide layer center section (7) forms bottom electrode through ion doping; The lateral dimension of the first silicon nitride layer center section (11) is much smaller than the lateral dimension of the second silicon carbide layer center section (7), through hole (9) is provided with in the middle of 3rd silicon carbide layer (3), through hole (9) runs through the 3rd silicon carbide layer (3), and through hole (9) lateral dimension is less than the lateral dimension of bottom electrode; Second silicon nitride layer center section (12) covers the inside surface of the 3rd silicon carbide layer (3) upside and through hole (9); Silicon nitride layer inside surface in through hole (9) is coated with bottom electrode electrical connection metal level (15), bottom electrode electrical connection metal level (15) top is formed with bottom electrode and is electrically connected.
2. high-temperature CMUT pressure sensor according to claim 1, it is characterized in that: the material of described first silicon carbide layer (1), the second silicon carbide layer (2) and the 3rd silicon carbide layer (3) is changed to adamas, and the material of the first silicon nitride layer (4) and the second silicon nitride layer (5) is changed to silicon dioxide.
3. high-temperature CMUT pressure sensor according to claim 1 and 2, is characterized in that: the first silicon nitride layer center section (11) thickness is less than the thickness of first silicon nitride layer peripheral part (10).
4. high-temperature CMUT pressure sensor according to claim 1 and 2, is characterized in that: the central point of corresponding first silicon carbide layer (1) of central point of the first silicon nitride layer center section (11).
5. high-temperature CMUT pressure sensor according to claim 1 and 2, it is characterized in that: the lateral dimension of second silicon nitride layer peripheral part (13) is identical with the lateral dimension of first silicon nitride layer peripheral part (10), and is symmetrically distributed in the both sides of the second silicon carbide layer (2).
6. high-temperature CMUT pressure sensor according to claim 1 and 2, is characterized in that: the second silicon nitride layer center section (12) is ring-type, and its outside lateral dimension is less than the lateral dimension of bottom electrode.
7. high-temperature CMUT pressure sensor according to claim 1 and 2, is characterized in that: the first silicon nitride layer center section (11), the second silicon carbide layer center section (7), the second silicon nitride layer center section (12), through hole (9), bottom electrode metal electric articulamentum (15) are symmetrical about same central shaft.
8. a preparation method for high-temperature CMUT pressure sensor, is characterized in that, comprises the following steps:
(1) get a P or N-type silicon carbide plate, adopt deep reaction ion etching technology etching through hole (9) in the middle part of this silit, this through hole (9) runs through this silicon carbide plate, now forms the 3rd silicon carbide layer (3);
(2) in the 3rd silicon carbide layer (3) upper surface and middle through-hole (9) inside surface deposited silicon nitride layer (16) thereof; Get a monocrystalline silicon or polysilicon chip as the first substrate silicon (17), surface deposition silicon carbide layer (18) thereon simultaneously;
(3) silicon nitride layer of photoetching, etching the 3rd silicon carbide layer (3) upper surface forms the second silicon nitride layer (5), it is divided into second silicon nitride layer peripheral part (13) and the second silicon nitride layer center section (12), and the second silicon nitride layer center section (12) is for covering the 3rd silicon carbide layer (3) upper surface middle part and whole through hole (9) inner surface portion; Local doping techniques is adopted to metallize silicon carbide layer (18) central region of the first substrate silicon (17) upper surface; Adopt silicon carbide layer (19) upper surface in chemical Mechanical Polishing Technique polishing second silicon nitride layer (5) and the first substrate silicon (17);
(4) by second silicon nitride layer (5) of the 3rd silicon carbide layer (3) upper surface and silicon carbide layer (19) bonding in the first substrate silicon (17), silicon carbide layer (19) wherein in the first substrate silicon upper, the second silicon nitride layer (5) under;
(5) etch away the first substrate silicon (17), discharge the silicon carbide layer (19) in the first substrate silicon, and adopt its surface of chemical Mechanical Polishing Technique polishing;
(6) in the upper deposited silicon nitride layer (20) of the silicon carbide layer (18) coming from the first substrate silicon;
(7) silicon nitride layer (20) that secondary photoetching, etching come from the silicon carbide layer of the first substrate silicon, it is made to form the first silicon nitride layer (4), first silicon nitride layer center section (11) is comparatively zonule, and thickness is less than the silicon nitride layer thickness of first silicon nitride layer peripheral part (10), the silicon nitride layer lateral dimension of first silicon nitride layer peripheral part (10) is identical with the lateral dimension of second silicon nitride layer peripheral part (13); Get another monocrystalline silicon or polysilicon chip as the second substrate silicon (21), surface deposition silicon carbide layer (22) thereon simultaneously;
(8) photoetching, etching come from the silicon carbide layer (19) of the first substrate silicon, it is made to form the second silicon carbide layer (2), its central region (7) is electrode, and second silicon carbide layer peripheral part (6) is non-doped silicon carbide; The silicon carbide layer (22) adopting ion doping technique to adulterate in the second substrate silicon (21), makes it form the first silicon carbide layer (1);
(9) chemical Mechanical Polishing Technique polishing first silicon carbide layer (1) and the first silicon nitride layer (4) upper surface is adopted, and by the two vacuum bonding, wherein the first silicon carbide layer (1) is upper, first silicon nitride layer (4) under, now the first silicon nitride layer (4), peripheral part composition cavity (14) sidewall of the second silicon carbide layer (2) and the second silicon nitride layer (5), first silicon carbide layer (1) and the 3rd silicon carbide layer (3) are respectively cavity (14) top and bottom, sidewall and top, cavity (14) seals by bottom together,
(10) the second substrate silicon (21) for depositing the first silicon carbide layer (1) is etched away, discharge the first silicon carbide layer (1), silicon nitride layer inside surface sputtering refractory metal layer simultaneously in through hole (9) forms bottom electrode electrical connection metal level (15), bottom electrode electrical connection metal level (15) top is formed with the central region of the second silicon carbide layer (2) and is electrically connected, and metal level sidewall covers on the inwall of through hole (9) interior silicon nitride layer.
9. the preparation method of high-temperature CMUT pressure sensor according to claim 8, is characterized in that: in step (10), in through hole (9), the refractory metal layer of sputtering is nickel dam or manganese layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310084858.6A CN103196613B (en) | 2013-03-15 | 2013-03-15 | A kind of high-temperature CMUT pressure sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310084858.6A CN103196613B (en) | 2013-03-15 | 2013-03-15 | A kind of high-temperature CMUT pressure sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103196613A CN103196613A (en) | 2013-07-10 |
| CN103196613B true CN103196613B (en) | 2016-02-24 |
Family
ID=48719308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310084858.6A Active CN103196613B (en) | 2013-03-15 | 2013-03-15 | A kind of high-temperature CMUT pressure sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103196613B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9783411B1 (en) | 2016-11-11 | 2017-10-10 | Rosemount Aerospace Inc. | All silicon capacitive pressure sensor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105043643B (en) * | 2015-04-23 | 2018-06-08 | 昆山泰莱宏成传感技术有限公司 | High-temp pressure sensor and preparation method thereof |
| CN113316486B (en) * | 2018-11-16 | 2022-10-18 | 维蒙股份公司 | Capacitive micromachined ultrasonic transducer and method of manufacturing the same |
| CN111707404B (en) * | 2020-05-28 | 2021-04-20 | 西安交通大学 | High-temperature-resistant silicon carbide pressure sensor and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101750609A (en) * | 2008-12-02 | 2010-06-23 | 黄勇力 | Capacitance type micromachined ultrasonic transducer capable of performing wireless telemetric sensing operation |
| CN102353610A (en) * | 2011-06-10 | 2012-02-15 | 西安交通大学 | Capacitance micro-machining ultrasonic sensor for measuring density and production method thereof |
| CN102620878A (en) * | 2012-03-15 | 2012-08-01 | 西安交通大学 | Capacitive micromachining ultrasonic sensor and preparation and application methods thereof |
| CN102620864A (en) * | 2012-03-15 | 2012-08-01 | 西安交通大学 | Capactive micro-machined ultrasonic transducer (CMUT)-based super-low range pressure sensor and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8767514B2 (en) * | 2007-12-03 | 2014-07-01 | Kolo Technologies, Inc. | Telemetric sensing using micromachined ultrasonic transducer |
| JP5506244B2 (en) * | 2009-05-27 | 2014-05-28 | キヤノン株式会社 | Capacitive electromechanical transducer |
-
2013
- 2013-03-15 CN CN201310084858.6A patent/CN103196613B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101750609A (en) * | 2008-12-02 | 2010-06-23 | 黄勇力 | Capacitance type micromachined ultrasonic transducer capable of performing wireless telemetric sensing operation |
| CN102353610A (en) * | 2011-06-10 | 2012-02-15 | 西安交通大学 | Capacitance micro-machining ultrasonic sensor for measuring density and production method thereof |
| CN102620878A (en) * | 2012-03-15 | 2012-08-01 | 西安交通大学 | Capacitive micromachining ultrasonic sensor and preparation and application methods thereof |
| CN102620864A (en) * | 2012-03-15 | 2012-08-01 | 西安交通大学 | Capactive micro-machined ultrasonic transducer (CMUT)-based super-low range pressure sensor and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| 一种微加工超声传感器的设计;张慧等;《天津大学学报》;20080115;第41卷(第01期);17-20 * |
| 电容式微加工超声传感器(cMUT)的结构设计及仿真;宋光德等;《纳米技术与精密工程》;20050630;第03卷(第02期);156-159 * |
| 电容式微加工超声传感器结构参数对性能的影响分析;张慧等;《传感技术学报》;20080615;第21卷(第06期);951-953 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9783411B1 (en) | 2016-11-11 | 2017-10-10 | Rosemount Aerospace Inc. | All silicon capacitive pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103196613A (en) | 2013-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104422548B (en) | Capacitance pressure transducer and forming method thereof | |
| KR101921843B1 (en) | Suspended membrane for capacitive pressure sensor | |
| CN103196613B (en) | A kind of high-temperature CMUT pressure sensor and preparation method thereof | |
| CN201653605U (en) | Silicon-bonding based pressure sensor | |
| CN103257005B (en) | Capacitance pressure transducer, and manufacture method thereof | |
| US20130277773A1 (en) | Through silcon via with reduced shunt capacitance | |
| JP2015515609A (en) | Catheter die and manufacturing method thereof | |
| DE60143202D1 (en) | MICROMECHANIC MANUFACTURED ABSOLUTE PRESSURE SENSOR | |
| CN104422549B (en) | Capacitance pressure transducer and forming method thereof | |
| TWI405710B (en) | Radio frequency identification based thermal bubble type accelerometer | |
| CN109141691A (en) | A kind of linkage membrane capacitance formula presser sensor chip and its manufacturing method | |
| CN102967409A (en) | Wireless inactive capacitive gas pressure sensor | |
| CN104697680A (en) | Capacitive pressure sensor and manufacturing method thereof | |
| US8754453B2 (en) | Capacitive pressure sensor and method for manufacturing same | |
| TWI633290B (en) | Micro feedback-chamber sensor and method of manufacturing such sensor | |
| CN103434999A (en) | Integrated manufacturing method for capacitance type temperature, humidity, air pressure and acceleration sensors based on anodic bonding of SOI (silicon on insulator) sheet silicon substrate | |
| CN103837290B (en) | High-precision capacitance pressure transducer, | |
| US8627720B2 (en) | Acceleration sensor | |
| CN105084296B (en) | Manufacturing method for MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer | |
| CN103879950B (en) | MEMS vacuum encapsulation structure | |
| CN104422550B (en) | Capacitance pressure transducer and forming method thereof | |
| KR101990706B1 (en) | Pressure sensor and manufacturing method thereof | |
| CN213364087U (en) | Capacitive MEMS pressure sensor applied to electronic terminal product | |
| CN103196577B (en) | Temperature sensor based on CMUT and preparation method and application method thereof | |
| CN112857628A (en) | MEMS capacitive pressure sensor chip and manufacturing process thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |