CN101950065A - Fully-spherical deep ultraviolet lithography objective - Google Patents
Fully-spherical deep ultraviolet lithography objective Download PDFInfo
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- CN101950065A CN101950065A CN 201010278088 CN201010278088A CN101950065A CN 101950065 A CN101950065 A CN 101950065A CN 201010278088 CN201010278088 CN 201010278088 CN 201010278088 A CN201010278088 A CN 201010278088A CN 101950065 A CN101950065 A CN 101950065A
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Abstract
The invention relates to a fully-spherical deep ultraviolet lithography objective and belongs to the technical field of high-resolution projection lithography objectives. The invention provides the deep ultraviolet lithography objective with lighting system operation wavelength of 193nm and numerical aperture of 0.75; the objective has a compact structure, large field view and high imaging quality, and reduces processing difficulty because all lenses are in a spherical shape; the objective comprises front and back lens groups, totally 29 fully-spherical lenses; the lens is made from fused quartz and calcium fluoride, wherein the calcium fluoride is used for correcting chromatic aberration; both sides of the system are telecentric and have extremely high telecentricity; and the radius and thickness of each lens element and the space between lens elements are optimized so as to better compensate aberration and obtain good structural parameters, so that the distortion of the image quality is less than 1nm and wave aberration is less than 3nm. The fully-spherical deep ultraviolet lithography objective can be applied to a deep ultraviolet projection lithography device with lighting source wavelength of 193nm.
Description
Technical field
The present invention relates to a kind of deep ultraviolet whole world face lithographic objective, belong to high resolution light projection photoetching objective lens technical field.
Background technology
Photoetching is a kind of ic manufacturing technology, utilizes method of optics that the circuitous pattern on the mask is transferred on the silicon chip, and the manufacturing of nearly all integrated circuit all is to adopt optical lithography techniques.At first, the semiconductor devices manufacturing, employing be the contact photolithography technology that mask and silicon chip stick together.Nineteen fifty-seven, the contact photolithography technology has realized that characteristic dimension (Feature Size) is the manufacturing of the dynamic RAM DRAM (Dynamic Random Access Memory) of 20 μ m.Afterwards, semicon industry is introduced the proximity photoetching technique that has certain interval between mask and silicon chip, and respectively at producing the DRAM that characteristic dimension is 10 μ m and 6 μ m in 1971 and 1974.1977, photoetching technique developed times projection lithography technology such as grade that to have 1: 1 projection optical system, and can make and make the DRAM that characteristic dimension is 4 μ m.After the 1980s, the steppers of dress occurred, and become the main flow in the semiconductor fabrication rapidly with the refraction type reduction projection.Steppers is compared with litho machine before this, the alignment precision when greatly having improved the resolution of system and mask/silicon chip alignment.
The projection lithography device is a key equipment of realizing the large scale integrated circuit manufacturing process, and high precision photoetching camera lens is the basis of high precision photoetching.Projection photoetching objective lens with 193 nanometer work wavelength is a core component of making the projection lithography device of superfine graph.Japanese Nikon (Nikon), Canon (Canon), Zeiss, Germany (Zeiss), the U.S. Chu Pu present disclosed projection photoetching objective lens with 193 nanometer work wavelength of company such as (Tropel), resolution is higher; But these objective lens arrangement complexity are made difficulty, cost an arm and a leg.Numerical aperture reaches 0.75 system and has the high-order aspheric surface mostly, and conjugate distance is longer, and system bulk is bigger.
Summary of the invention
The present invention is for solving the existing low deficiency of light projection photoetching objective lens resolving power, and the big problem of difficulty of processing, having proposed a kind of illuminator operation wavelength is 193nm, numerical aperture reaches 0.75 deep-UV lithography object lens, this objective lens arrangement compactness, big visual field, image quality are good, each lens surface all uses sphere, has reduced difficulty of processing.
Lens combination before and after the present invention includes; Lens material uses fused quartz and calcium fluoride, wherein, calcium fluoride act as correcting chromatic aberration.
Front lens group comprises first meniscus lens, first negative lens, first positive lens, second positive lens, the 3rd positive lens, second meniscus lens, the 4th positive lens, second negative lens, the 3rd negative lens, the 4th negative lens, the 3rd meniscus lens, the 4th meniscus lens, the 5th positive lens, the 6th positive lens, the 7th positive lens, the 5th meniscus lens, the 6th meniscus lens, the 5th negative lens, the 7th meniscus lens, the 8th meniscus lens.Above lens are arranged in turn, and the same optical axis of each lens is fixed relative position between them with the mechanical component on the lens housing.
Rear lens group comprises the 8th positive lens, the 9th positive lens, the 9th meniscus lens, the tenth positive lens, the 11 positive lens, the tenth meniscus lens, the 11 meniscus lens, the 6th negative lens, the 12 positive lens.Above lens are arranged in turn, and the same optical axis of each lens is fixed relative position between them with the mechanical component on the lens housing.
Mechanical component on the lens combination scioptics housing of front and back is fixed together two same optical axises of lens combination at a certain distance.
The course of work of deep ultraviolet of the present invention whole world face lithographic objective is: with object plane is before mask places first meniscus lens of objective system, each visual field central ray vertical incidence first meniscus lens, be the object space heart far away, each visual field, process front lens group refraction back is full of the diaphragm between the 6th meniscus lens and the 9th positive lens respectively, focus on through rear lens group refraction, dwindling four times of image planes that are imaged on behind the 12 positive lens is on the silicon chip again.Each visual field central ray vertical incidence image planes, system is picture Fang Yuanxin.
The present invention does not comprise aspheric surface, is convenient to make compact conformation.System both sides' heart far away has high heart degree far away.The radius of each lens element, thickness spacing change with better aberration for compensation in optimization and obtain good structural parameters, and final picture element distortion is less than 1nm, and wave aberration is less than 3nm.
The present invention compared with prior art has the following advantages:
1, the numerical aperture of light projection photoetching objective lens (NA)=0.75, operation wavelength=193 nanometers because numerical aperture of objective is big, has overcome the low deficiency of existing light projection photoetching objective lens resolving power, has improved photolithography resolution (R).
2, whole photoetching objective system is made of 29 lens, does not use aspheric surface, and no a slice gummed part is simple in structure, compact, has simplified the object lens manufacture craft, has reduced cost of manufacture, has improved the object lens image quality simultaneously.
3, under short wavelength, guaranteed that the optical system of being made up of lens is higher as the two telecentric systems and the heart degree far away of Fang Yuanxin, the object space heart far away.Owing to be two telecentric systems,, can not change the projection lithography multiplying power even therefore mask graph and silicon chip position have and depart from a small quantity and tilt yet.
4, image quality is good, with central ray be with reference to the time root mean square wave aberration less than 3nm, distortion is less than 1nm.
Photoetching camera lens proposed by the invention, can be applied to the lighting source wavelength is in the deep UV projection photoetching device of 193nm.
Description of drawings
Fig. 1 is the structural representation of deep ultraviolet of the present invention whole world face lithographic objective;
Fig. 2 is lithographic objective optical-modulation transfer function figure in whole audience scope in the embodiment;
Fig. 3 is the lithographic objective curvature of field and distortion figure in the embodiment.
Label declaration: 1-first meniscus lens, 2-first negative lens, 3-first positive lens, 4-second positive lens, 5-the 3rd positive lens, 6-second meniscus lens, 7-the 4th positive lens, 8-second negative lens, 9-the 3rd negative lens, 10-the 4th negative lens, 11-the 3rd meniscus lens, 12-the 4th meniscus lens, 13-the 5th positive lens, 14-the 6th positive lens, 15-the 7th positive lens, 16-the 5th meniscus lens, 17-the 6th meniscus lens, 18-the 5th negative lens, 19-the 7th meniscus lens, 20-the 8th meniscus lens, 21-the 8th positive lens, 22-the 9th positive lens, 23-the 9th meniscus lens, 24-the tenth positive lens, 25-the 11 positive lens, 26-the tenth meniscus lens, 27-the 11 meniscus lens, 28-the 6th negative lens, 29-the 12 positive lens, the 30-image planes.
Embodiment
For objects and advantages of the present invention are described better, the invention will be further described below in conjunction with the drawings and specific embodiments.
Lens combination was formed before and after the deep ultraviolet whole world face lithographic objective of present embodiment adopted, and used 29 lens altogether.As shown in Figure 1, lens 1 are front lens group to lens 20, and lens 21 to lens 29 are rear lens group, 30 for image planes be surface, silicon chip place.The present invention has used fused quartz (refractive index is 1.560326 during system centre wavelength 193.368nm) as main lens material, and calcium fluoride (refractive index is 1.501455 during the system centre wavelength) is as the correcting chromatic aberration material therefor.
Front lens group comprises first meniscus lens 1, first negative lens 2, first positive lens 3, second positive lens 4, the 3rd positive lens 5, second meniscus lens 6, the 4th positive lens 7, second negative lens 8, the 3rd negative lens 9, the 4th negative lens 10, the 3rd meniscus lens 11, the 4th meniscus lens 12, the 5th positive lens 13, the 6th positive lens 14, the 7th positive lens 15, the 5th meniscus lens 16, the 6th meniscus lens 17, the 5th negative lens 18, seven meniscus lens 19, the 8th meniscus lens 20.
Rear lens group comprises the 8th positive lens 21, the 9th positive lens 22, the 9th meniscus lens 23, the ten positive lenss the 24, the 11 positive lens 25, the tenth meniscus lens the 26, the 11 meniscus lens 27, the 6th negative lens the 28, the 12 positive lens 29.
Mechanical component on 29 lens scioptics housings in the lens combination of front and back is fixed the relative position between them and is linked together the same optical axis of each lens.
For satisfying the structural parameters requirement, and further improve picture element, system is continued to optimize, through optimizing change the at interval concrete optimized Measures of present embodiment of each surperficial radius of back and thickness is Applied Optics Design software construction majorized function, and add aberration and structural limitations parameter, progressively obtain existing result.
Present embodiment is realized by following technical measures: lighting source is the ArF laser instrument, the numerical aperture of light projection photoetching objective lens (NA)=0.75, and distortion is less than 1nm, and the root mean square wave aberration is less than 3nm, and the optical system reduction magnification is 4 times.
Concrete parameter is as follows:
| Radius | Spacing | The glass label | |
| Object plane | ∞ | 65.9453 | |
| 1 | -387.2086 | 12.0000 | SIO2 |
| 2 | -202.9252 | 4.4211 | |
| 3 | -152.0877 | 12.0000 | SIO2 |
| 4 | 291.6500 | 18.6442 | |
| 5 | 891.4416 | 24.0371 | SIO2 |
| 6 | -264.2665 | 1.0000 | |
| 7 | 486.4638 | 27.4985 | SIO2 |
| 8 | -359.2186 | 1.0000 | |
| 9 | 347.1473 | 30.6295 | SIO2 |
| 10 | -395.7689 | 1.0000 | |
| 11 | 203.7262 | 28.6092 | SIO2 |
| 12 | 107.5405 | 31.0742 | |
| 13 | 707.5963 | 49.1678 | SIO2 |
| 14 | -171.5584 | 4.4808 | |
| 15 | -165.8708 | 12.0000 | SIO2 |
| 16 | 205.3550 | 15.1743 | |
| 17 | -421.9090 | 12.0000 | SIO2 |
| 18 | 236.3269 | 19.8706 | |
| 19 | -216.4488 | 12.0000 | SIO2 |
| 20 | 2529.0731 | 14.0188 | |
| 21 | -216.4198 | 23.6388 | SIO2 |
| 22 | -803.9345 | 8.3512 | |
| 23 | -317.2219 | 40.2406 | SIO2 |
| 24 | -218.7415 | 1.0000 | |
| 25 | 7488.9815 | 33.1122 | SIO2 |
| 26 | -294.6667 | 1.0000 | |
| 27 | 1341.3925 | 30.4613 | SIO2 |
| 28 | -483.5234 | 1.0000 | |
| 29 | 230.3291 | 54.9307 | CAF2 |
| 30 | -1909.7868 | 1.0000 | |
| 31 | 242.1401 | 54.3873 | SIO2 |
| 32 | 128.8974 | 11.8358 | |
| 33 | 127.8846 | 23.2957 | SIO2 |
| 34 | 154.8368 | 44.1832 | |
| 35 | -245.1817 | 12.0000 | SIO2 |
| 36 | 195.1257 | 45.7121 |
| 37 | -160.6086 | 12.0000 | SIO2 |
| 38 | -593.9618 | 7.9905 | |
| 39 | -304.9760 | 47.0357 | CAF2 |
| 40 | -194.2195 | 1.0000 | |
| STO | INFINITY | 1.0000 | |
| 42 | 2995.2699 | 37.3711 | CAF2 |
| 43 | -277.2928 | 1.0000 | |
| 44 | 325.0650 | 37.6408 | CAF2 |
| 45 | -1585.0227 | 22.2691 | |
| 46 | -321.0058 | 55.0000 | SIO2 |
| 47 | -485.7897 | 18.6282 | |
| 48 | 1313.4355 | 12.5457 | SIO2 |
| 49 | -64498.9496 | 1.0000 | |
| 50 | 235.8757 | 55.0000 | CAF2 |
| 51 | -3547.8270 | 5.0127 | |
| 52 | 174.4485 | 40.8664 | CAF2 |
| 53 | 406.2570 | 1.9338 | |
| 54 | 154.5233 | 28.1878 | CAF2 |
| 55 | 478.0642 | 9.1618 | |
| 56 | 12060.2709 | 55.0000 | SIO2 |
| 57 | 499.5050 | 1.7994 | |
| 58 | 1188.4547 | 55.0000 | SIO2 |
| 59 | -2194.9576 | 10.8365 |
| Image planes | ∞ | 0.0000 |
More than the concrete parameter of each lens in practical operation, can do fine setting to satisfy different systematic parameter requirements.
The deep ultraviolet whole world face lithographic objective that present embodiment is made adopts following three kinds of evaluation meanses to test and assess:
1, optical-modulation transfer function evaluation
Optical-modulation transfer function (MTF) is the direct evaluation to resolving power of lens and depth of focus.System MTF reaches diffraction limit substantially.Optical-modulation transfer function as shown in Figure 2 (MTF) shows that the described deep ultraviolet of present embodiment whole world face lithographic objective is in whole audience scope, and during MTF ≈ 40%, systemic resolution reaches 4000lp/mm, and cutoff frequency is 7700lp/mm
2, the astigmatism and the curvature of field and distortion
Fig. 3 is the curvature of field and distortion figure of the described lithographic objective of present embodiment.As can be seen from the figure, all less than 45nm, astigmatism is less than 30nm on the sagitta of arc and meridian ellipse for system's focal plane shift.Distortion changes with the visual field, and the marginal distortion maximum is 7e-8, so full the visual field maximum distortion is 1nm.
3, the root mean square corrugated is poor
The lithographic objective that present embodiment is designed is that the minimum value of the monochromatic root mean square wave aberration of reference is that 0.0056 λ (F0.50) is 1.08nm with the center, and maximal value is that 0.0120 λ (F0.9) is 2.3nm.
The present invention selects global face lens by increasing eyeglass, optimizes the radius and the thickness parameter of each lens, and it is good to have obtained picture element, the new system that is easy to make.New system does not contain aspheric surface, and compact conformation is two core structures far away and heart degree height far away, and picture element is good.
Claims (4)
1. deep ultraviolet whole world face lithographic objective, it is characterized in that: whole 29 lens are sphere; Lens combination before and after comprising, wherein:
Front lens group comprises first meniscus lens, first negative lens, first positive lens, second positive lens, the 3rd positive lens, second meniscus lens, the 4th positive lens, second negative lens, the 3rd negative lens, the 4th negative lens, the 3rd meniscus lens, the 4th meniscus lens, the 5th positive lens, the 6th positive lens, the 7th positive lens, the 5th meniscus lens, the 6th meniscus lens, the 5th negative lens, the 7th meniscus lens, the 8th meniscus lens; Above lens are arranged in turn, and the same optical axis of each lens is fixed relative position between them with the mechanical component on the lens housing;
Rear lens group comprises the 8th positive lens, the 9th positive lens, the 9th meniscus lens, the tenth positive lens, the 11 positive lens, the tenth meniscus lens, the 11 meniscus lens, the 6th negative lens, the 12 positive lens; Above lens are arranged in turn, and the same optical axis of each lens is fixed relative position between them with the mechanical component on the lens housing;
Mechanical component on the lens combination scioptics housing of front and back is fixed together two same optical axises of lens combination at a certain distance;
More than the concrete parameter of each lens as follows:
2. deep ultraviolet according to claim 1 whole world face lithographic objective, it is characterized in that: the lighting source of described deep ultraviolet whole world face lithographic objective is the ArF laser instrument, the numerical aperture of light projection photoetching objective lens (NA)=0.75, distortion is less than 1nm, with central ray be with reference to the time root mean square wave aberration less than 3nm, the optical system reduction magnification is 4 times.
3. deep ultraviolet according to claim 1 whole world face lithographic objective, it is characterized in that: lens material comprises fused quartz and calcium fluoride, wherein, calcium fluoride act as correcting chromatic aberration; Lens surface all is a sphere, does not use gummed spare.
4. deep ultraviolet according to claim 1 whole world face lithographic objective, it is characterized in that: the concrete parameter of described each lens can be done fine setting to satisfy different systematic parameter requirements in practical operation.
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| CN2010102780885A CN101950065B (en) | 2010-09-10 | 2010-09-10 | Fully-spherical deep ultraviolet lithography objective |
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| CN2010102780885A CN101950065B (en) | 2010-09-10 | 2010-09-10 | Fully-spherical deep ultraviolet lithography objective |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107664809A (en) * | 2016-07-29 | 2018-02-06 | 上海微电子装备（集团）股份有限公司 | A kind of projection objective |
| CN109656092A (en) * | 2019-01-07 | 2019-04-19 | 中国科学院福建物质结构研究所 | A kind of ultraviolet relaying framing optical system and ultraviolet framing camera |
| CN110501809A (en) * | 2019-09-20 | 2019-11-26 | 沈阳中一光学科技有限公司 | The digital camera silent frame micro-lens of 1-5 times of zoom |
| CN114326071A (en) * | 2021-12-14 | 2022-04-12 | 宁波永新光学股份有限公司 | 20-time large numerical aperture flat field apochromatic microscope objective |
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| JP2000231058A (en) * | 1999-02-12 | 2000-08-22 | Nikon Corp | Projection optical system, projection exposure device equipped with the system and production of device |
| EP1544676A2 (en) * | 2003-12-15 | 2005-06-22 | Carl Zeiss SMT AG | Refractive projection objective for immersion lithography |
| CN1666152A (en) * | 2002-05-03 | 2005-09-07 | 卡尔蔡司Smt股份公司 | Very high-aperture projection objective |
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2010
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| JP2000056219A (en) * | 1998-08-11 | 2000-02-25 | Nikon Corp | Optical projection system |
| JP2000121933A (en) * | 1998-10-13 | 2000-04-28 | Nikon Corp | Projection optical system, exposure device provided with the system and production of device |
| JP2000231058A (en) * | 1999-02-12 | 2000-08-22 | Nikon Corp | Projection optical system, projection exposure device equipped with the system and production of device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107664809A (en) * | 2016-07-29 | 2018-02-06 | 上海微电子装备（集团）股份有限公司 | A kind of projection objective |
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| CN109656092A (en) * | 2019-01-07 | 2019-04-19 | 中国科学院福建物质结构研究所 | A kind of ultraviolet relaying framing optical system and ultraviolet framing camera |
| CN109656092B (en) * | 2019-01-07 | 2024-04-12 | 中国科学院福建物质结构研究所 | Ultraviolet relay framing optical system and ultraviolet framing camera |
| CN110501809A (en) * | 2019-09-20 | 2019-11-26 | 沈阳中一光学科技有限公司 | The digital camera silent frame micro-lens of 1-5 times of zoom |
| CN110501809B (en) * | 2019-09-20 | 2021-07-23 | 沈阳中一光学科技有限公司 | Full-frame macro lens of digital camera |
| CN114326071A (en) * | 2021-12-14 | 2022-04-12 | 宁波永新光学股份有限公司 | 20-time large numerical aperture flat field apochromatic microscope objective |
| CN114326071B (en) * | 2021-12-14 | 2024-03-19 | 宁波永新光学股份有限公司 | 20-time large numerical aperture flat field apochromatic microscope objective lens |
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