CN101975983B - High-resolution aspheric photoetching object lens - Google Patents
High-resolution aspheric photoetching object lens Download PDFInfo
- Publication number
- CN101975983B CN101975983B CN201010279318XA CN201010279318A CN101975983B CN 101975983 B CN101975983 B CN 101975983B CN 201010279318X A CN201010279318X A CN 201010279318XA CN 201010279318 A CN201010279318 A CN 201010279318A CN 101975983 B CN101975983 B CN 101975983B
- Authority
- CN
- China
- Prior art keywords
- lens
- sio2
- positive
- aspheric
- negative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention relates to a high-resolution aspheric photoetching object lens which belongs to the technical field of a high-resolution projection photoetching object lens. The high-resolution aspheric photoetching object lens comprises a front lens set and a rear lens set. The numerical aperture is 0.75, and 29 lenses are used in total, 3 surfaces of the 29 lenses use aspheric surfaces for 10 times; and the lenses are made of fused quartz and calcium fluoride used for correcting chromatic aberration. The invention further improves the resolution of the existing projection photoetching object lens, and greatly improves the imaging quality by using a small quantity of low order aspheric surfaces; and the radius and the thickness space of each lens element are changed in the optimizing process to fit with the aspheric surface so as to carry out aberration correction better. When the central optical line is used as a reference, the wave aberration of homochromy mean square root is less than nm, and the aberrance is less than 0.7nm.
Description
Technical field
The present invention relates to a kind of high resolving power aspheric surface lithographic objective, belong to high resolution light projection photoetching objective lens technical field.
Background technology
Photoetching is a kind of ic manufacturing technology, utilizes method of optics that the circuitous pattern on the mask is transferred on the silicon chip, and the manufacturing of nearly all integrated circuit all is to adopt optical lithography techniques.At first, the semiconductor devices manufacturing, employing be the contact photolithography technology that mask and silicon chip stick together.Nineteen fifty-seven, the contact photolithography technology has realized that characteristic dimension (Feature Size) is the manufacturing of the dynamic RAM DRAM (Dynamic Random Access Memory) of 20 μ m.Afterwards, semicon industry introduce have between mask and silicon chip certain interval near the formula photoetching technique, and respectively at producing the DRAM that characteristic dimension is 10 μ m and 6 μ m in 1971 and 1974.1977, photoetching technique developed times projection lithography technology such as grade that to have 1: 1 projection optical system, and can make and make the DRAM that characteristic dimension is 4 μ m.After the 1980s, the steppers of dress occurred, and become the main flow in the semiconductor fabrication rapidly with the refraction type reduction projection.Steppers is compared with litho machine before this, the alignment precision when greatly having improved resolution and the mask of system/silicon chip alignment.
The projection lithography device is a key equipment of realizing the large scale integrated circuit manufacturing process.Light projection photoetching objective lens then is the core component of projection lithography device.Projection photoetching objective lens with 193 nanometer work wavelength is a core component of making the projection lithography device of superfine graph.Japanese Nikon (Nikon), Canon (Canon), Zeiss, Germany (Zeiss), the U.S. Chu Pu present disclosed projection photoetching objective lens with 193 nanometer work wavelength of company such as (Tropel), numerical aperture is all more than or equal to 0.50-0.75, and resolving power is higher; But these objective lens arrangement are complicated, cost an arm and a leg.
This patent is that system improves as initial configuration in 201010278088.5 " deep ultraviolet whole world face lithographic objective " with the patent No. of previous application.Though original system is improving a lot aspect image quality, the manufacturability than other most of object lens of prior art; But image quality still has the space that can improve; The part-structure parameter is not optimized Fabrication parameter, such as negative lens thickness is smaller, and lens gross thickness and weight are bigger.
Summary of the invention
The present invention further improves image quality, and solves the deep-UV lithography object lens gross thickness and the bigger problem of weight of prior art, proposes a kind of high resolving power aspheric surface lithographic objective.
High resolving power aspheric surface lithographic objective of the present invention comprises front lens group, rear lens group, and numerical aperture is 0.75, uses 29 lens altogether, wherein has 3 surfaces to use aspheric surface 10 times; Lens material uses fused quartz and calcium fluoride, and wherein calcium fluoride act as correcting chromatic aberration.
Preceding group lens comprise first meniscus lens, first negative lens, first positive lens, second positive lens, the 3rd positive lens, second meniscus lens, the 4th positive lens, second negative lens, the 3rd negative lens, the 4th negative lens, the 5th negative lens, the 3rd meniscus lens, the 5th positive lens, the 6th positive lens, the 7th positive lens, the 4th meniscus lens, the 5th meniscus lens, the 6th negative lens, the 7th negative lens, the 6th meniscus lens.
Above lens are arranged in order, and the same optical axis of each lens is fixed the relative position between them with the mechanical component on the lens housing.
Described the 6th negative lens front surface is 10 aspheric surfaces.The surface is 10 aspheric surfaces behind described the 6th meniscus lens.
Back group lens comprise the 8th positive lens, the 9th positive lens, the 7th meniscus lens, the tenth positive lens, the 11 positive lens, the 12 positive lens, the 13 positive lens, the 8th negative lens, the 14 positive lens.Above lens are arranged in order, and the same optical axis of each lens is fixed the relative position between them with the mechanical component on the lens housing.
The surface is 10 aspheric surfaces behind described the 8th negative lens.
Mechanical component on the lens combination scioptics housing of front and back is fixed together two same optical axises of lens combination by a determining deviation.
The course of work of high resolving power aspheric surface lithographic objective of the present invention is: with object plane is before mask places first meniscus lens of objective system; Each visual field central ray vertical incidence first mirror; Be the object space heart far away; Be full of the diaphragm between the 6th meniscus lens and the 8th positive lens respectively through each visual field, front lens group refraction back, again through rear lens group refraction focusing, dwindling four times of image planes that are imaged on behind the 14 positive lens is on the silicon chip.Each visual field central ray vertical incidence image planes, system is picture Fang Yuanxin.
The present invention has further improved the resolving power of existing light projection photoetching objective lens, uses a spot of low order aspheric surface significantly to improve image quality, and the radius of each lens element, thickness change in optimization to cooperate the better aberration correction of aspheric surface with spacing.With central ray be with reference to the time monochromatic root mean square wave aberration less than 1nm, distortion is less than 0.7nm.
Beneficial effect
The present invention compared with prior art has the following advantages:
1, the numerical aperture of light projection photoetching objective lens (NA)=0.75, operation wavelength=193 nanometers because numerical aperture of objective is big, has improved photolithography resolution (R).
2, projection photoetching objective lens with 193 nanometer work wavelength is made up of 29 lens, and no a slice gummed part only used three 10 aspheric surfaces, so objective lens arrangement is simple, has simplified the object lens manufacture craft, has reduced cost of manufacture, has significantly improved the object lens quality simultaneously.
3, under short wavelength, guaranteed that the optical system that lens are formed is the two telecentric systems as Fang Yuanxin, the object space heart far away.Owing to be two telecentric systems,, can not change the projection lithography multiplying power even therefore mask graph departs from and inclination with the silicon chip position on a small quantity yet.
4, image quality is excellent, with central ray be with reference to the time root mean square wave aberration less than 1nm, distortion is less than 0.7nm.Compare and global plane system image quality significantly improves.
Photoetching camera lens proposed by the invention, can be applied to the lighting source wavelength is in the deep UV projection photoetching device of 193nm.
Description of drawings
Fig. 1 is the system architecture synoptic diagram of high resolving power aspheric surface lithographic objective of the present invention;
Fig. 2 is an aspheric surface position view in the system of the present invention.
First aspheric surface (ASP1) is the 6th negative lens 18 front surfaces (being lens the 35th faces).Second aspheric surface (ASP2) is the 6th meniscus lens 20 surfaces, back (being lens the 40th faces).The 3rd aspheric surface (ASP3) is the 8th negative lens 28 surfaces, back (being lens the 57th faces).
Fig. 3 is lithographic objective optical-modulation transfer function figure in whole audience scope in the embodiment;
The curvature of field and distortion figure that Fig. 4 is formed images on silicon chip for lithographic objective in the embodiment.
Label declaration: 1-first meniscus lens, 2-first negative lens, 3-first positive lens, 4-second positive lens, 5-the 3rd positive lens, 6-second meniscus lens, 7-the 4th positive lens, 8-second negative lens, 9-the 3rd negative lens, 10-the 4th negative lens, 11-the 5th negative lens, 12-the 3rd meniscus lens, 13-the 5th positive lens, 14-the 6th positive lens, 15-the 7th positive lens, 16-the 4th meniscus lens, 17-the 5th meniscus lens, 18-the 6th negative lens, 19-the 7th negative lens, 20-the 6th meniscus lens, 21-the 8th positive lens, 22-the 9th positive lens, 23-the 7th meniscus lens; 24-the tenth positive lens, 25-the 11 positive lens, 26-the 12 positive lens, 27-the 13 positive lens, 28-the 8th negative lens, 29-the 14 positive lens, 30-image planes, wherein behind the 6th negative lens front surface (being lens the 35th faces), the 6th meniscus lens behind surface (being lens the 40th faces), the 8th negative lens surface (being lens the 57th faces) be ten aspheric surfaces.
Embodiment
For objects and advantages of the present invention are described better, the present invention is described further below in conjunction with accompanying drawing and specific embodiment.
Lens combination was formed before and after the high resolving power aspheric surface lithographic objective of present embodiment adopted, and used 29 global face lens altogether, and three 10 aspheric surfaces are wherein arranged.Shown in accompanying drawing 1, lens 1 be front lens group to lens 20, and lens 21 to lens 29 be rear lens group, 30 for image planes to be that silicon chip belongs to surperficial.Lens material uses fused quartz (refractive index is 1.560326 during system centre wavelength 193.368nm) as main lens material, and calcium fluoride (refractive index is 1.501455 during the system centre wavelength) is as the correcting chromatic aberration material therefor.
Before the group lens comprise first meniscus lens 1, first negative lens 2, first positive lens 3, second positive lens 4, the 3rd positive lens 5, second meniscus lens 6, the 4th positive lens 7, second negative lens 8, the 3rd negative lens 9, the 4th negative lens 10, the 5th negative lens 11, the 3rd meniscus lens 12, the 5th positive lens 13, the 6th positive lens 14, the 7th positive lens 15, the 4th meniscus lens 16, the 5th meniscus lens 17, the 6th negative lens 18, the 7th negative lens 19, the 6th meniscus lens 20.
Described the 6th negative lens 18 front surfaces (being lens the 35th faces) are 10 aspheric surfaces.
Described the 6th meniscus lens 20 surfaces, back (being lens the 40th faces) are 10 aspheric surfaces.
Group lens in back comprise the 8th positive lens 21, the 9th positive lens 22, the 7th meniscus lens 23, the ten positive lenss the 24, the 11 positive lens the 25, the 12 positive lens the 26, the 13 positive lens 27, the 8th negative lens the 28, the 14 positive lens 29.Above lens are arranged in order, and the same optical axis of each lens is fixed the relative position between them with the mechanical component on the lens housing.
Described the 8th negative lens 28 surfaces, back (being lens the 57th faces) are 10 aspheric surfaces.
On the 40th on the 35th on lens, lens with comparatively near the 57th on the lens of image planes, add 10 rank aspheric surfaces respectively, with the various aberrations of balance, picture element significantly improves.
Mechanical component on the lens combination scioptics housing of front and back is fixed the relative position between them and is linked together the same optical axis of each lens.
29 global face lens in the lens combination of front and back of the present invention compared with prior art, the spacing of the radius of each lens and thickness and lens has all been carried out optimization in various degree.The concrete optimized Measures of present embodiment is an Applied Optics Design software construction majorized function, and adds aberration and structural limitations parameter, progressively obtains existing result.
Present embodiment can be realized through following technical measures: the numerical aperture of projection photoetching objective lens with 193 nanometer work wavelength (NA)=0.75, distortion be less than 0.7nm, with central ray be with reference to the time root mean square wave aberration less than 1nm, the optical system reduction magnification is 4 times.The concrete parameter of its each lens is following:
| Radius | Spacing | The glass label | |
| Object plane | ∞ | 68.04774 | |
| 1 | -287.882 | 12 | SIO2 |
| 2 | -221.974 | 6.5654 | |
| 3 | -145.064 | 13.9 | SIO2 |
| 4 | 460.2362 | 31.69243 | |
| 5 | 6364.995 | 27.61898 | SIO2 |
| 6 | -232.091 | 0.5 | |
| 7 | 810.0899 | 29.82606 | SIO2 |
| 8 | -339.034 | 0.5 | |
| 9 | 323.8489 | 29.77231 | SIO2 |
| 10 | -1012.35 | 0.5 | |
| 11 | 209.0542 | 45.31999 | SIO2 |
| 12 | 126.2162 | 14.24639 | |
| 13 | 210.4571 | 29.93556 | SIO2 |
| 14 | -443.612 | 0.512135 | |
| 15 | -628.697 | 34.09739 | SIO2 |
| 16 | 129.0868 | 19.43334 | |
| 17 | 1206.875 | 13.2 | SIO2 |
| 18 | 210.6486 | 21.48033 | |
| 19 | -230.923 | 13.02 | SIO2 |
| 20 | 361.0262 | 18.95117 | |
| 21 | -228.819 | 14.1 | SIO2 |
| 22 | 2161.029 | 44.39872 | |
| 23 | -1057.95 | 21.08942 | SIO2 |
| 24 | -306.469 | 0.500873 | |
| 25 | 2677.576 | 35.67205 | SIO2 |
| 26 | -314.753 | 0.5 | |
| 27 | 1085.945 | 39.07586 | SIO2 |
| 28 | -382.195 | 0.5 | |
| 29 | 211.2432 | 49.83807 | CAF2 |
| 30 | 9917.512 | 0.5 | |
| 31 | 212.3262 | 23.1 | SIO2 |
| 32 | 108.2633 | 0.507347 | |
| 33 | 108.7488 | 24.54285 | SIO2 |
| 34 | 142.6591 | 47.10856 | |
| 35 | -273.068 | 18.1 | SIO2 |
| 36 | 165.6149 | 45.92228 | |
| 37 | -168.324 | 17.00883 | SIO2 |
| 38 | -434.215 | 26.70709 | |
| 39 | -217.495 | 40.0699 | CAF2 |
| 40 | -171.658 | 2.962581 |
| STO | ∞ | 0.505691 | |
| 42 | 1084.665 | 34.98534 | CAF2 |
| 43 | -346.534 | 0.5 | |
| 44 | 342.2677 | 35.79381 | CAF2 |
| 45 | -1277.77 | 17.61283 | |
| 46 | -348.682 | 25.4 | SIO2 |
| 47 | -1851.09 | 33.93939 | |
| 48 | 638.9566 | 32.19414 | SIO2 |
| 49 | -723.2 | 0.5 | |
| 50 | 323.6347 | 36.41279 | CAF2 |
| 51 | -1830.96 | 0.5 | |
| 52 | 162.6255 | 43.47341 | CAF2 |
| 53 | 415.6428 | 3.714167 | |
| 54 | 196.7659 | 26.12903 | CAF2 |
| 55 | 577.7424 | 7.299869 | |
| 56 | -2842.98 | 54.81898 | SIO2 |
| 57 | 99.34601 | 2.428926 | |
| 58 | 93.48931 | 51.46798 | SIO2 |
| 59 | 2421.709 | 9.000045 | |
| Image planes | ∞ | -4.50E-05 |
More than the concrete parameter of each lens in practical operation, can do fine setting to satisfy different systematic parameter requirements.
The high resolving power aspheric surface lithographic objective that present embodiment is made adopts following three kinds of evaluation meanses to test and assess:
1, optical transfer function evaluation
Optical-modulation transfer function (MTF) is the direct evaluation of confirming resolving power of lens and depth of focus.System MTF reaches diffraction limit basically.Optical-modulation transfer function in whole audience scope (MTF) Fig. 2 shows, the lithographic objective of design can be on best (ideal) image planes during MTF ≈ 40%, and resolution reaches 4000lp/mm.By resolution is 7700lp/mm.
2, the astigmatism and the curvature of field and distortion
For the astigmatism and the curvature of field, the point of light from the mask penetrates and focuses on the point, but this point not necessarily with other o'clocks on a focal plane.Astigmatism causes horizontal direction and vertical direction to focus on different positions, the desirable image planes position of the position deviation design of pinpointed focus, and the curvature of field produces thereupon.The desirable image planes position that the astigmatism and the curvature of field cause each x direction of endless belt and y direction focusing position deviation to be designed.
Distortion is that a kind of light penetrates and focus on an aberration on the point from a point on the mask.When having the astigmatism and the curvature of field, these points drop on the front or the back on plane.And only exist under the situation of distortion, these points drop on the plane vertical with optical axis, and still the distance with optical axis is not right.When having distortion, image is very clear, but dislocation is arranged.
All less than 45nm, astigmatism is less than 30nm on the sagitta of arc and meridian ellipse for system's focal plane shift.Distortion changes with the visual field, and the marginal distortion maximum is 5e-6%, so full the visual field maximum distortion is 0.7nm.
3, the root mean square corrugated is poor
Light can be regarded light wave as and be focused on the point, and under the ideal situation, this should be a spherical wave, but because there is aberration in lens, possibly deviation in a small amount arranged with the ideal ball ground roll before the actual image wave.An aberration obtains the optical system of fine correction, and its image quality is to be judged by root mean square (RMS) corrugated difference.The object lens of our design with central ray be with reference to the time monochromatic root mean square wave aberration minimum value be 0.7nm, maximal value 1nm.
The present invention optimizes each radius and thickness parameter through 3 10 aspheric surfaces, has reduced system weight, has obtained the good new system of picture element.New system only uses the rank aspheric surface 10 times, and compact conformation for two core structures far away and heart degree height far away, can reach high picture element.
Claims (3)
1. high resolving power aspheric surface lithographic objective is characterized in that: lens combination before and after comprising, and totally 29 lens wherein have 3 10 aspheric surfaces, wherein:
Preceding group lens comprise first meniscus lens, first negative lens, first positive lens, second positive lens, the 3rd positive lens, second meniscus lens, the 4th positive lens, second negative lens, the 3rd negative lens, the 4th negative lens, the 5th negative lens, the 3rd meniscus lens, the 5th positive lens, the 6th positive lens, the 7th positive lens, the 4th meniscus lens, the 5th meniscus lens, the 6th negative lens, the 7th negative lens, the 6th meniscus lens;
Above lens are arranged in order, and the same optical axis of each lens is fixed the relative position between them with the mechanical component on the lens housing;
Described the 6th negative lens front surface is 10 aspheric surfaces;
The surface is 10 aspheric surfaces behind described the 6th meniscus lens;
Back group lens comprise the 8th positive lens, the 9th positive lens, the 7th meniscus lens, the tenth positive lens, the 11 positive lens, the 12 positive lens, the 13 positive lens, the 8th negative lens, the 14 positive lens; Above lens are arranged in order, and the same optical axis of each lens is fixed the relative position between them with the mechanical component on the lens housing;
The surface is 10 aspheric surfaces behind described the 8th negative lens;
Mechanical component on the lens combination scioptics housing of front and back is fixed together two same optical axises of lens combination by a determining deviation;
More than the concrete parameter of each lens following:
Described three 10 aspheric coefficients are:
Promptly the 35th of the 6th negative lens front surface
K 0.450089591
A -7.34405E-09
B 9.07918E-13
C 4.10227E-18
D -5.15199E-22
The surface is promptly the 40th behind the 6th meniscus lens
K -0.052414285
A 4.77018E-10
B 1.33294E-14
C 2.85232E-19
D 6.44219E-24
The surface is promptly the 57th behind the 8th negative lens
K -0.820039936
A 2.34901E-08
B 3.39107E-13
C -1.81853E-16
D -2.93392E-20。
2. high resolving power aspheric surface lithographic objective according to claim 1; It is characterized in that: described high resolving power aspheric surface lithographic objective lighting source operation wavelength 193 nanometers; The numerical aperture of light projection photoetching objective lens (NA)=0.75; Distortion is less than 0.7nm, with the center be with reference to the time root mean square wave aberration less than 1nm, the optical system reduction magnification is 4 times.
3. high resolving power aspheric surface lithographic objective according to claim 1 is characterized in that: the lens material of described high resolving power aspheric surface lithographic objective comprises fused quartz and calcium fluoride, wherein, calcium fluoride act as correcting chromatic aberration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010279318XA CN101975983B (en) | 2010-09-13 | 2010-09-13 | High-resolution aspheric photoetching object lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010279318XA CN101975983B (en) | 2010-09-13 | 2010-09-13 | High-resolution aspheric photoetching object lens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101975983A CN101975983A (en) | 2011-02-16 |
| CN101975983B true CN101975983B (en) | 2012-05-30 |
Family
ID=43575881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010279318XA Active CN101975983B (en) | 2010-09-13 | 2010-09-13 | High-resolution aspheric photoetching object lens |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101975983B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113189746B (en) * | 2017-12-08 | 2022-09-02 | 大立光电股份有限公司 | Electronic device |
| CN112817122B (en) * | 2019-11-18 | 2022-05-20 | 成都理想境界科技有限公司 | Projection objective and scanning display device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1383015A (en) * | 2001-04-23 | 2002-12-04 | 清华大学 | Lens of biochip scanning-detecting system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW448307B (en) * | 1999-12-21 | 2001-08-01 | Zeiss Stiftung | Optical projection system |
| DE10064685A1 (en) * | 2000-12-22 | 2002-07-04 | Zeiss Carl | Lithography lens with a first lens group consisting exclusively of lenses with positive refractive power |
| CN1466001A (en) * | 2002-06-24 | 2004-01-07 | 中国科学院光电技术研究所 | Ultraviolet light projection photoetching objective lens with self-adaption total reflection pole |
| JP2006107680A (en) * | 2004-10-08 | 2006-04-20 | Nidec Nissin Corp | Annular phase correction lens and optical head device |
| JP4807388B2 (en) * | 2008-09-22 | 2011-11-02 | 株式会社ニコン | Zoom lens with anti-vibration function |
| CN101587230B (en) * | 2009-04-09 | 2010-12-29 | 上海微电子装备有限公司 | Projection objective |
| CN101692138B (en) * | 2009-10-21 | 2011-05-04 | 北京理工大学 | Refrigeration type infrared seeker optical system comprising aspheric special fairing |
-
2010
- 2010-09-13 CN CN201010279318XA patent/CN101975983B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1383015A (en) * | 2001-04-23 | 2002-12-04 | 清华大学 | Lens of biochip scanning-detecting system |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2008-304952A 2008.12.18 |
| 张丽琴等.多组元全动型变焦距透镜高斯光学参数的求解方法.《光学学报》.2002,第22卷(第05期),第573-575页. * |
| 郝劲波等.基于微透镜阵列的实时三维物体识别.《光子学报》.2007,第36卷(第11期),第2010-1011页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101975983A (en) | 2011-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103499877B (en) | A kind of projection optical system of large-numerical aperture | |
| KR20040089688A (en) | Refractive projection lens | |
| US20130250434A1 (en) | Projection objective lens system | |
| US6333781B1 (en) | Projection optical system and exposure apparatus and method | |
| JP5105743B2 (en) | Refractive projection objective for immersion lithography | |
| JP2009539123A (en) | Large field of view projection optical system | |
| CN102331616B (en) | Fully-spherical projection objective | |
| TWI723714B (en) | Lithography projection objective | |
| CN101950065B (en) | Fully-spherical deep ultraviolet lithography objective | |
| CN103499876B (en) | A kind of pure refractive projection optics system of large-numerical aperture | |
| CN102566011B (en) | Projection optical system | |
| CN102662307B (en) | High-resolution projection optical system | |
| CN101975983B (en) | High-resolution aspheric photoetching object lens | |
| CN100492175C (en) | Projection optic system | |
| CN102645730B (en) | Experimental immersed projective lithography objective lens | |
| CN103353669B (en) | High-numerical aperture immersion projection objective lens | |
| CN104035187B (en) | Pure reflecting dry type projection optical system with large numerical aperture | |
| CN100538524C (en) | Projection optical system | |
| CN100492181C (en) | All-refraction immersion type projection and optical system, device and its uses | |
| CN102508353B (en) | High-resolution Forbes aspherical photoetching objective lens | |
| JP2008286888A (en) | Exposure device | |
| CN102981249A (en) | Projection optical system | |
| CN109375480A (en) | A kind of photoetching projection objective lens and litho machine | |
| CN103713379A (en) | Catadioptric dry type projection optical system with large numerical aperture | |
| CN106773556B (en) | A kind of free form surface refraction-reflection type photoetching projection objective lens |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |