CN101944846A - A kind of 0.75 times of charge pump circuit - Google Patents
A kind of 0.75 times of charge pump circuit Download PDFInfo
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- CN101944846A CN101944846A CN 201010274686 CN201010274686A CN101944846A CN 101944846 A CN101944846 A CN 101944846A CN 201010274686 CN201010274686 CN 201010274686 CN 201010274686 A CN201010274686 A CN 201010274686A CN 101944846 A CN101944846 A CN 101944846A
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Abstract
The present invention has disclosed a kind of 0.75 times of charge pump circuit, comprises electric capacity and switch, and by electric capacity and switch are selected the control modulator output voltage, it is characterized in that: a described switch (S1) and switch (S2) end are connected to input voltage V jointly
InThe other end of switch (S1) is connected respectively to electric capacity (C1) and switch (S5), the other end of switch (S2) is connected to electric capacity (C2) and switch (S3) respectively, the other end of described switch (S3) links to each other with the other end, switch (S6) and the switch (S7) of electric capacity (C1) with respect to switch (S1) simultaneously, and the other end of the other end of described switch (S6) and switch (S5) constitutes the output V of charge pump circuit in the lump
Out, described output V
OutBy a load capacitance (C3) ground connection; And described switch (S7) other end links to each other with electric capacity (C2) other end, and by a switch (S4) ground connection.The present invention has avoided PN junction to produce the defective of leakage current, effectively reduces chip quiescent dissipation and application cost.
Description
Technical field
The present invention relates to integrated circuit fields, be specifically related to the charge pump circuit structure of a kind of modulator output voltage for input voltage non-integer branch several times.
Background technology
Usually need to use the voltage higher or smaller slightly than supply voltage than supply voltage in the integrated circuit, the application of charge pump that therefore is used for modulation power source voltage is quite extensive.Provide supply voltage level in addition as the DC-to-DC transducer; Provide high voltage to operational amplifier; And all outsides provide single voltage, and the inner circuit that needs multiple level, especially provide aspect the required voltage at nonvolatile memory, are bringing into play crucial effects.
Generally speaking, the charge pump circuit of output voltage that is used for the higher multiple of modulation ratio supply voltage is ripe relatively, and for example 2 times, 4 times charge pump circuit is widespread usage.But in many cases, the voltage output that some circuit of integrated circuit (IC) chip inside need be lower than supply voltage is driven, and relatively Chang Yong a kind of charge pump circuit specification is 0.75 times of charge pump circuit.But 4 of existing direct 0.75 times of charge pump circuit structure needs fly electric capacity and 11 switches can be realized, this has increased more than 50% and switch relevant chip area to a certain extent, increases by 4 pins simultaneously, thereby causes the significantly rising of chip cost.
Fly electric capacity and 7 circuit structures that switch can be realized even there is similar 0.75 times of charge pump also only to need 2 in addition, but in the phase III of its running, input voltage is connected on C1-, C1+ is connected on C2+, C2-is connected on output voltage, and such connection will cause node C1+ and the C2+ magnitude of voltage in the phase III greater than input voltage.This can produce the leakage current of PN junction in the side circuit design based on CMOS, thereby causes the quiescent dissipation of charge pump circuit to increase, even can't operate as normal.
Summary of the invention
In view of the defective that above-mentioned prior art exists, purpose of the present invention is intended to propose a kind of 0.75 times of novel charge pump circuit structure, reduces chip area and manufacturing cost on the one hand, overcomes the defective in the homogeneous circuit design on the other hand.
Purpose of the present invention will be achieved by the following technical programs:
A kind of 0.75 times of charge pump circuit comprises electric capacity and switch, by electric capacity and switch are selected the control modulator output voltage, it is characterized in that:
A described switch (S1) and switch (S2) end are connected to input voltage V jointly
InThe other end of switch (S1) is connected respectively to electric capacity (C1) and switch (S5), the other end of switch (S2) is connected to electric capacity (C2) and switch (S3) respectively, the other end of described switch (S3) links to each other with the other end, switch (S6) and the switch (S7) of electric capacity (C1) with respect to switch (S1) simultaneously, and the other end of the other end of described switch (S6) and switch (S5) constitutes the output V of charge pump circuit in the lump
Out, described output V
OutBy a load capacitance (C3) ground connection; And described switch (S7) other end links to each other with electric capacity (C2) other end, and by a switch (S4) ground connection.
The operation of described charge pump circuit comprises the three phases in the one-period:
Phase I switch (S3), switch (S4) and switch (S5) conducting, switch (S1), switch (S2), switch (S6) and switch (S7) disconnect;
Second stage switch (S1) and switch (S6) conducting, switch (S2), switch (S3), switch (S4), switch (S5) and switch (S7) disconnect;
Phase III switch (S2), switch (S5) and switch (S7) conducting, switch (S1), switch (S3), switch (S4), switch (S6) disconnect.
Technique scheme of the present invention also can further be optimized for: described switch (S1) to switch (S7) is cmos switch, is driven by control signal and opens or close; Described control signal is other switching frequency of megahertz level; Described electric capacity (C1) and electric capacity (C2) are for flying electric capacity.
After the application implementation of 0.75 times of charge pump circuit of the present invention, compare to the charge pump circuit of traditional technology, saved 4 package pins and 2 and flown electric capacity, can effectively reduce charge pump circuit and reach more than 30%, thereby reduced the quiescent dissipation and the application cost of chip at the area on the chip; Avoided the defective of PN junction generation leakage current in the similar technology simultaneously.
Following constipation closes the embodiment accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
Description of drawings
Fig. 1 a is the on off state schematic diagram of charge pump circuit phase I of the present invention;
Fig. 1 b is the on off state schematic diagram of charge pump circuit second stage of the present invention;
Fig. 1 c is the on off state schematic diagram of charge pump circuit phase III of the present invention;
Fig. 2 a is the simplified system block diagram of Fig. 1 a;
Fig. 2 b is the simplified system block diagram of Fig. 1 b;
Fig. 2 c is the simplified system block diagram of Fig. 1 c.
Embodiment
The present invention is for the purpose of chip miniaturized design and reduction manufacturing cost, simultaneously also for overcoming the defective in traditional homogeneous circuit design, researcher of the present invention is through careful circuit studies and experiment repeatedly, a kind of 0.75 times of novel charge pump circuit structure has been proposed eventually, by simple switch and electric capacity combining structure, formed the charge pump circuit system that can realize and satisfy every functional requirement.
0.75 times of charge pump circuit of this kind of the present invention comprises electric capacity and switch, by other switching frequency of megahertz level electric capacity and switch is selected the control modulator output voltage, and its concrete circuit structure feature is shown in Fig. 1 a～Fig. 1 c.Wherein a switch (S1) and switch (S2) end are connected to input voltage V jointly
InThe other end of switch (S1) is connected respectively to electric capacity (C1) and switch (S5), the other end of switch (S2) is connected to electric capacity (C2) and switch (S3) respectively, the other end of switch (S3) links to each other with the other end, switch (S6) and the switch (S7) of electric capacity (C1) with respect to switch (S1) simultaneously, and the other end of the other end of switch (S6) and switch (S5) constitutes the output V of charge pump circuit in the lump
Out, output V
OutBy a load capacitance (C3) ground connection; And switch (S7) other end links to each other with electric capacity (C2) other end, and by a switch (S4) ground connection.
Above-mentioned charge pump circuit is to regulate and control running by the control signal of one-period, and described each cmos switch is independently controlled by control signal, and this control signal operation is divided into three phases in one-period, and the on off state in each stage is shown in Fig. 2 a～Fig. 2 c:
Phase I switch (S3), switch (S4) and switch (S5) conducting, switch (S1), switch (S2), switch (S6) and switch (S7) disconnect; At this moment, C1 and C2 series connection, C1+ meets output V
Out, C2-ground connection, C1 and C1 discharge electric charge to C3; The loop voltage formula of equivalence is:
Eq.1 V
Out=V1+V2, wherein V1, V2 are the voltage that flies electric capacity;
Second stage switch (S1) and switch (S6) conducting, switch (S2), switch (S3), switch (S4), switch (S5) and switch (S7) disconnect; At this moment, C1+ meets input V
In, C1-meets output V
Out, input V
InTo C1 and C3 charging; The loop voltage formula of equivalence is:
Eq.2 V
out＝V
in-V1
Phase III switch (S2), switch (S5) and switch (S7) conducting, switch (S1), switch (S3), switch (S4), switch (S6) disconnect; At this moment, C2+ meets input V
In, C2-meets C1-, and C1+ meets output V
Out, V
InWith C1 C2 and C3 are charged; The loop voltage formula of equivalence is:
Eq.3 V
out＝V
in-V2+V1
Connection is separated above-mentioned three loop voltage formula, and can derive draws under the state of circuit for dynamic equilibrium, and output voltage is 0.75 times of input voltage, (does not promptly have internal power consumption) under the condition of perfect switch, and output current is 0.75 times of output current.V
out＝0.75V
in。
After the control signal of one-period, each switch (S1) to (S7) returns to the home position, enters the switch control modulation of following one-period, by regulating control signal suitable frequency and circuit of the present invention, exportable 0.75 times input voltage.
After the application implementation of 3/4ths times of charge pump circuits of the present invention, compare to the charge pump circuit of conventional art, saved 4 package pins and 2 and flown electric capacity, can effectively reduce charge pump circuit and reach more than 30%, thereby reduced the quiescent dissipation and the application cost of chip at the area on the chip; Avoided the defective of PN junction generation leakage current in the similar technology simultaneously.
Claims (5)
1. 0.75 times of charge pump circuit comprises electric capacity and switch, by electric capacity and switch are selected the control modulator output voltage, it is characterized in that:
A described switch (S1) and switch (S2) end are connected to input voltage V jointly
InThe other end of switch (S1) is connected respectively to electric capacity (C1) and switch (S5), the other end of switch (S2) is connected to electric capacity (C2) and switch (S3) respectively, the other end of described switch (S3) links to each other with the other end, switch (S6) and the switch (S7) of electric capacity (C1) with respect to switch (S1) simultaneously, and the other end of the other end of described switch (S6) and switch (S5) constitutes the output V of charge pump circuit in the lump
Out, described output V
OutBy a load capacitance (C3) ground connection; And described switch (S7) other end links to each other with electric capacity (C2) other end, and by a switch (S4) ground connection.
2. a kind of 0.75 times of charge pump circuit according to claim 1 is characterized in that: described switch (S1) to switch (S7) is cmos switch, is driven by control signal and opens or close.
3. a kind of 0.75 times of charge pump circuit according to claim 1 is characterized in that: described control signal is other switching frequency of megahertz level.
4. a kind of 0.75 times of charge pump circuit according to claim 1 is characterized in that: described electric capacity (C1) and electric capacity (C2) are for flying electric capacity.
5. a kind of 0.75 times of charge pump circuit according to claim 1 is characterized in that: the operation of described charge pump circuit comprises the three phases in the one-period:
Phase I switch (S3), switch (S4) and switch (S5) conducting, switch (S1), switch (S2), switch (S6) and switch (S7) disconnect;
Second stage switch (S1) and switch (S6) conducting, switch (S2), switch (S3), switch (S4), switch (S5) and switch (S7) disconnect;
Phase III switch (S2), switch (S5) and switch (S7) conducting, switch (S1), switch (S3), switch (S4), switch (S6) disconnect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010274686A CN101944846B (en) | 2010-09-07 | 2010-09-07 | 0.75-time charge pump circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010274686A CN101944846B (en) | 2010-09-07 | 2010-09-07 | 0.75-time charge pump circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101944846A true CN101944846A (en) | 2011-01-12 |
| CN101944846B CN101944846B (en) | 2012-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010274686A Active CN101944846B (en) | 2010-09-07 | 2010-09-07 | 0.75-time charge pump circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532377A (en) * | 2013-10-31 | 2014-01-22 | 无锡中星微电子有限公司 | Charge pump device and power management circuit using same |
| CN109039058A (en) * | 2018-08-09 | 2018-12-18 | 安徽矽磊电子科技有限公司 | A kind of electric pressure converter based on configurable switch capacitor |
| CN110620510A (en) * | 2019-09-29 | 2019-12-27 | 维沃移动通信有限公司 | Power supply circuit, electronic device, and power supply circuit control method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2245780A (en) * | 1990-07-05 | 1992-01-08 | Motorola Inc | Voltage multiplier |
| US5767735A (en) * | 1995-09-29 | 1998-06-16 | Intel Corporation | Variable stage charge pump |
| US6806761B1 (en) * | 2003-05-01 | 2004-10-19 | National Semiconductor Corporation | Integrated charge pump circuit with low power voltage regulation |
| US20070222501A1 (en) * | 2005-11-01 | 2007-09-27 | Catalyst Semiconductor, Inc. | Programmable Fractional Charge Pump For DC-DC Converter |
| CN101335486A (en) * | 2007-06-28 | 2008-12-31 | 天利半导体（深圳）有限公司 | Low-cost high-efficient time division multiplex charge pump circuit |
-
2010
- 2010-09-07 CN CN201010274686A patent/CN101944846B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2245780A (en) * | 1990-07-05 | 1992-01-08 | Motorola Inc | Voltage multiplier |
| US5767735A (en) * | 1995-09-29 | 1998-06-16 | Intel Corporation | Variable stage charge pump |
| US6806761B1 (en) * | 2003-05-01 | 2004-10-19 | National Semiconductor Corporation | Integrated charge pump circuit with low power voltage regulation |
| US20070222501A1 (en) * | 2005-11-01 | 2007-09-27 | Catalyst Semiconductor, Inc. | Programmable Fractional Charge Pump For DC-DC Converter |
| CN101335486A (en) * | 2007-06-28 | 2008-12-31 | 天利半导体（深圳）有限公司 | Low-cost high-efficient time division multiplex charge pump circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532377A (en) * | 2013-10-31 | 2014-01-22 | 无锡中星微电子有限公司 | Charge pump device and power management circuit using same |
| CN103532377B (en) * | 2013-10-31 | 2015-12-23 | 无锡中感微电子股份有限公司 | A kind of charge pump apparatus and use the electric power management circuit of this device |
| CN109039058A (en) * | 2018-08-09 | 2018-12-18 | 安徽矽磊电子科技有限公司 | A kind of electric pressure converter based on configurable switch capacitor |
| CN109039058B (en) * | 2018-08-09 | 2020-06-26 | 安徽矽磊电子科技有限公司 | Voltage converter based on configurable switched capacitor |
| CN110620510A (en) * | 2019-09-29 | 2019-12-27 | 维沃移动通信有限公司 | Power supply circuit, electronic device, and power supply circuit control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101944846B (en) | 2012-10-17 |
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