CN101944846B - 0.75-time charge pump circuit - Google Patents
0.75-time charge pump circuit Download PDFInfo
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- CN101944846B CN101944846B CN201010274686A CN201010274686A CN101944846B CN 101944846 B CN101944846 B CN 101944846B CN 201010274686 A CN201010274686 A CN 201010274686A CN 201010274686 A CN201010274686 A CN 201010274686A CN 101944846 B CN101944846 B CN 101944846B
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- pump circuit
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Abstract
The invention discloses a 0.75-time charge pump circuit which comprises capacitors and switches, and controls modulation output voltage by selecting the capacitors and the switches. The invention is characterized in that one end of a switch (S1) and one end of a switch (S2) are connected to an input voltage Vin together; the other end of the switch (S1) is respectively connected to a capacitor (C1) and a switch (S5), and the other end of the switch (S2) is respectively connected to a capacitor (C2) and a switch (S3); the other end of the switch (S3) is simultaneously connected with the other end of the capacitor (C1) relative to the switch (S1), a switch (S6) and a switch (S7); the other end of the switch (S6) and the other end of the switch (S5) form the output end Vout of a charge pump circuit together; the output end Vout is grounded through a load capacitor (C3); and the other end of the switch (S7) is connected with the other end of the capacitor (C2), and is grounded through a switch (S4). The invention prevents a PN junction from generating leakage current, and effectively reduces the chip statical power consumption and application cost.
Description
Technical field
The present invention relates to integrated circuit fields, being specifically related to a kind of modulator output voltage is the charge pump circuit structure of input voltage non-integer fraction.
Background technology
Usually need use the voltage higher or smaller slightly than supply voltage than supply voltage in the integrated circuit, the application of charge pump that therefore is used for modulation power source voltage is quite extensive.Like the DC-to-DC transducer level beyond the supply voltage is provided; To operational amplifier high voltage is provided; And all outsides provide single voltage, and the circuit of the multiple level of inside needs, especially provide aspect the required voltage at nonvolatile memory, are bringing into play crucial effects.
Generally speaking, the charge pump circuit of output voltage that is used for the higher multiple of modulation ratio supply voltage is ripe relatively, and for example 2 times, 4 times charge pump circuit is widespread usage.But in many cases, the voltage output that some inner circuit of IC chip need be lower than supply voltage drives, and a kind of charge pump circuit specification relatively more commonly used is 0.75 times of charge pump circuit.But 4 of existing direct 0.75 times of charge pump circuit structure needs fly electric capacity and 11 switches can be realized, this has increased more than 50% and switch relevant chip area to a certain extent, increases by 4 pins simultaneously, thereby causes the significantly rising of chip cost.
Fly electric capacity and 7 circuit structures that switch can be realized even there is similar 0.75 times of charge pump also only to need 2 in addition; But in the phase III of its running; Input voltage is connected on C1-; C1+ is connected on C2+, and C2-is connected on output voltage, and such connection will cause node C1+ and the C2+ magnitude of voltage in the phase III greater than input voltage.This can produce the leakage current of PN junction in the side circuit design based on CMOS, thereby causes the quiescent dissipation of charge pump circuit to increase, even can't operate as normal.
Summary of the invention
In view of the defective that above-mentioned prior art exists, the object of the invention is intended to propose a kind of 0.75 times of novel charge pump circuit structure, reduces chip area and manufacturing cost on the one hand, overcomes the defective in the homogeneous circuit design on the other hand.
The object of the invention will be achieved through following technical scheme:
A kind of 0.75 times of charge pump circuit comprises electric capacity and switch, through electric capacity and switch are selected the control modulator output voltage, it is characterized in that:
A said switch (S1) and switch (S2) end are connected to input voltage V jointly
InThe other end of switch (S1) is connected respectively to electric capacity (C1) and switch (S5); The other end of switch (S2) is connected to electric capacity (C2) and switch (S3) respectively; The other end of said switch (S3) links to each other with the other end, switch (S6) and the switch (S7) of electric capacity (C1) with respect to switch (S1) simultaneously, and the other end of the other end of said switch (S6) and switch (S5) constitutes the output V of charge pump circuit in the lump
Out, said output V
OutThrough a load capacitance (C3) ground connection; And said switch (S7) other end links to each other with electric capacity (C2) other end, and through a switch (S4) ground connection.
The operation of said charge pump circuit comprises the three phases in the one-period:
Phase I switch (S3), switch (S4) and switch (S5) conducting, switch (S1), switch (S2), switch (S6) and switch (S7) break off;
Second stage switch (S1) and switch (S6) conducting, switch (S2), switch (S3), switch (S4), switch (S5) and switch (S7) break off;
Phase III switch (S2), switch (S5) and switch (S7) conducting, switch (S1), switch (S3), switch (S4), switch (S6) break off.
Technique scheme of the present invention also can further be optimized for: said switch (S1) to switch (S7) is cmos switch, is driven by control signal and opens or close; Said control signal is other switching frequency of megahertz level; Said electric capacity (C1) and electric capacity (C2) are for flying electric capacity.
After the application implementation of 0.75 times of charge pump circuit of the present invention; Compare to the charge pump circuit of traditional technology; Saved 4 package pins and 2 and flown electric capacity, can effectively reduce charge pump circuit and reach more than 30%, thereby reduced the quiescent dissipation and the application cost of chip at the area on the chip; Avoided the defective of PN junction generation leakage current in the similar technology simultaneously.
Following constipation closes the embodiment accompanying drawing, and specific embodiments of the invention is done further to detail, so that technical scheme of the present invention is easier to understand, grasp.
Description of drawings
Fig. 1 a is the on off state sketch map of charge pump circuit phase I of the present invention;
Fig. 1 b is the on off state sketch map of charge pump circuit second stage of the present invention;
Fig. 1 c is the on off state sketch map of charge pump circuit phase III of the present invention;
Fig. 2 a is the simplified system block diagram of Fig. 1 a;
Fig. 2 b is the simplified system block diagram of Fig. 1 b;
Fig. 2 c is the simplified system block diagram of Fig. 1 c.
Embodiment
The present invention is from the purpose of chip miniaturized design and reduction manufacturing cost; Simultaneously also for overcoming the defective in traditional homogeneous circuit design; Researcher of the present invention is through careful circuit studies and experiment repeatedly; Proposed a kind of 0.75 times of novel charge pump circuit structure eventually,, formed the charge pump circuit system that can realize and satisfy each item functional requirement through simple switch and electric capacity combining structure.
0.75 times of charge pump circuit of this kind of the present invention comprises electric capacity and switch, through other switching frequency of megahertz level electric capacity and switch is selected the control modulator output voltage, and its concrete circuit structure characteristic is shown in Fig. 1 a～Fig. 1 c.Wherein a switch (S1) and switch (S2) end are connected to input voltage V jointly
InThe other end of switch (S1) is connected respectively to electric capacity (C1) and switch (S5); The other end of switch (S2) is connected to electric capacity (C2) and switch (S3) respectively; The other end of switch (S3) links to each other with the other end, switch (S6) and the switch (S7) of electric capacity (C1) with respect to switch (S1) simultaneously, and the other end of the other end of switch (S6) and switch (S5) constitutes the output V of charge pump circuit in the lump
Out, output V
OutThrough a load capacitance (C3) ground connection; And switch (S7) other end links to each other with electric capacity (C2) other end, and through a switch (S4) ground connection.
Above-mentioned charge pump circuit is to regulate and control running by the control signal of one-period property, and said each cmos switch is independently controlled by control signal, and this control signal operation is divided into three phases in one-period, and the on off state in each stage is shown in Fig. 2 a～Fig. 2 c:
Phase I switch (S3), switch (S4) and switch (S5) conducting, switch (S1), switch (S2), switch (S6) and switch (S7) break off; At this moment, C1 and C2 series connection, C1+ meets output V
Out, C2-ground connection, C1 and C1 discharge electric charge to C3; The loop voltage formula of equivalence is:
Eq.1 V
Out=V1+V2, wherein V1, V2 are the voltage that flies electric capacity;
Second stage switch (S1) and switch (S6) conducting, switch (S2), switch (S3), switch (S4), switch (S5) and switch (S7) break off; At this moment, C1+ meets input V
In, C1-meets output V
Out, input V
InTo C1 and C3 charging; The loop voltage formula of equivalence is:
Eq.2 V
out＝V
in-V1
Phase III switch (S2), switch (S5) and switch (S7) conducting, switch (S1), switch (S3), switch (S4), switch (S6) break off; At this moment, C2+ meets input V
In, C2-meets C1-, and C1+ meets output V
Out, V
InWith C1 C2 and C3 are charged; The loop voltage formula of equivalence is:
Eq.3 V
out＝V
in-V2+V1
Join and separate above-mentioned three loop voltage formula, can derive to draw when circuit and start under the state of dynamic equilibrium, output voltage is 0.75 times of input voltage, under the condition of perfect switch, (does not promptly have internal power consumption), and output current is 0.75 times of output current.V
out＝0.75V
in。
After the control signal of one-period, each switch (S1) to (S7) returns to the home position, gets into the switch control modulation of following one-period, through regulating control signal suitable frequency and circuit of the present invention, exportable 0.75 times input voltage.
After the application implementation of 3/4ths times of charge pump circuits of the present invention; Compare to the charge pump circuit of conventional art; Saved 4 package pins and 2 and flown electric capacity, can effectively reduce charge pump circuit and reach more than 30%, thereby reduced the quiescent dissipation and the application cost of chip at the area on the chip; Avoided the defective of PN junction generation leakage current in the similar technology simultaneously.
Claims (5)
1. 0.75 times of charge pump circuit comprises electric capacity and switch, and through electric capacity and switch are selected the control modulator output voltage, it is characterized in that: switch S 1 is connected to input voltage V jointly with switch S 2 one ends
InThe other end of switch S 1 is connected respectively to capacitor C 1 and switch S 5; The other end of switch S 2 is connected to capacitor C 2 and switch S 3 respectively; The other end of said switch S 3 links to each other with the other end, switch S 6 and the switch S 7 of capacitor C 1 with respect to switch S 1 simultaneously, and the other end of the other end of said switch S 6 and switch S 5 constitutes the output V of charge pump circuit in the lump
Out, said output V
OutThrough a load capacitance C3 ground connection; And said switch S 7 other ends link to each other with capacitor C 2 other ends, and through a switch S 4 ground connection.
2. a kind of 0.75 times of charge pump circuit according to claim 1, it is characterized in that: said switch S 1 to switch S 7 is cmos switch, is driven by control signal and opens or close.
3. a kind of 0.75 times of charge pump circuit according to claim 1 is characterized in that: through other switching frequency of megahertz level electric capacity and switch are selected the control modulator output voltage.
4. a kind of 0.75 times of charge pump circuit according to claim 1 is characterized in that: said capacitor C 1 and capacitor C 2 are for flying electric capacity.
5. a kind of 0.75 times of charge pump circuit according to claim 1; It is characterized in that: the operation of said charge pump circuit comprises the three phases in the one-period: phase I switch S 3, switch S 4 and switch S 5 conductings, and switch S 1, switch S 2, switch S 6 and switch S 7 are broken off; Second stage switch S 1 and switch S 6 conductings, switch S 2, switch S 3, switch S 4, switch S 5 and switch S 7 are broken off; Phase III switch S 2, switch S 5 and switch S 7 conductings, switch S 1, switch S 3, switch S 4, switch S 6 are broken off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010274686A CN101944846B (en) | 2010-09-07 | 2010-09-07 | 0.75-time charge pump circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010274686A CN101944846B (en) | 2010-09-07 | 2010-09-07 | 0.75-time charge pump circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101944846A CN101944846A (en) | 2011-01-12 |
| CN101944846B true CN101944846B (en) | 2012-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010274686A Active CN101944846B (en) | 2010-09-07 | 2010-09-07 | 0.75-time charge pump circuit |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532377B (en) * | 2013-10-31 | 2015-12-23 | 无锡中感微电子股份有限公司 | A kind of charge pump apparatus and use the electric power management circuit of this device |
| CN109039058B (en) * | 2018-08-09 | 2020-06-26 | 安徽矽磊电子科技有限公司 | Voltage converter based on configurable switched capacitor |
| CN110620510B (en) * | 2019-09-29 | 2020-07-28 | 维沃移动通信有限公司 | Power supply circuit, electronic device, and power supply circuit control method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2245780A (en) * | 1990-07-05 | 1992-01-08 | Motorola Inc | Voltage multiplier |
| US5767735A (en) * | 1995-09-29 | 1998-06-16 | Intel Corporation | Variable stage charge pump |
| US6806761B1 (en) * | 2003-05-01 | 2004-10-19 | National Semiconductor Corporation | Integrated charge pump circuit with low power voltage regulation |
| CN101335486A (en) * | 2007-06-28 | 2008-12-31 | 天利半导体（深圳）有限公司 | Low-cost high-efficient time division multiplex charge pump circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7602232B2 (en) * | 2005-11-01 | 2009-10-13 | Semiconductor Components Industries, L.L.C. | Programmable fractional charge pump for DC-DC converter |
-
2010
- 2010-09-07 CN CN201010274686A patent/CN101944846B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2245780A (en) * | 1990-07-05 | 1992-01-08 | Motorola Inc | Voltage multiplier |
| US5767735A (en) * | 1995-09-29 | 1998-06-16 | Intel Corporation | Variable stage charge pump |
| US6806761B1 (en) * | 2003-05-01 | 2004-10-19 | National Semiconductor Corporation | Integrated charge pump circuit with low power voltage regulation |
| CN101335486A (en) * | 2007-06-28 | 2008-12-31 | 天利半导体（深圳）有限公司 | Low-cost high-efficient time division multiplex charge pump circuit |
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| Publication number | Publication date |
|---|---|
| CN101944846A (en) | 2011-01-12 |
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