CN101944659B - Circuit connection material, use its film-shaped circuit connection material, the connecting structure of circuit member and manufacture method thereof - Google Patents
Circuit connection material, use its film-shaped circuit connection material, the connecting structure of circuit member and manufacture method thereof Download PDFInfo
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- CN101944659B CN101944659B CN201010245654.2A CN201010245654A CN101944659B CN 101944659 B CN101944659 B CN 101944659B CN 201010245654 A CN201010245654 A CN 201010245654A CN 101944659 B CN101944659 B CN 101944659B
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- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- JUIBLDFFVYKUAC-UHFFFAOYSA-N [5-(2-ethylhexanoylperoxy)-2,5-dimethylhexan-2-yl] 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOC(C)(C)CCC(C)(C)OOC(=O)C(CC)CCCC JUIBLDFFVYKUAC-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- ATMLPEJAVWINOF-UHFFFAOYSA-N acrylic acid acrylic acid Chemical compound OC(=O)C=C.OC(=O)C=C ATMLPEJAVWINOF-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- YAVVGPBYBUYPSR-UHFFFAOYSA-N benzene;oxygen Chemical compound [O].C1=CC=CC=C1 YAVVGPBYBUYPSR-UHFFFAOYSA-N 0.000 description 1
- YOYKPBWYXCUFCQ-UHFFFAOYSA-N benzenesulfonylbenzene;pyrrole-2,5-dione Chemical compound O=C1NC(=O)C=C1.O=C1NC(=O)C=C1.C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 YOYKPBWYXCUFCQ-UHFFFAOYSA-N 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- DDTBPAQBQHZRDW-UHFFFAOYSA-N cyclododecane Chemical compound C1CCCCCCCCCCC1 DDTBPAQBQHZRDW-UHFFFAOYSA-N 0.000 description 1
- FNIATMYXUPOJRW-UHFFFAOYSA-N cyclohexylidene Chemical group [C]1CCCCC1 FNIATMYXUPOJRW-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000004826 dibenzofurans Chemical class 0.000 description 1
- 125000001891 dimethoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N glyceric acid Chemical compound OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000004658 ketimines Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- LUCXVPAZUDVVBT-UHFFFAOYSA-N methyl-[3-(2-methylphenoxy)-3-phenylpropyl]azanium;chloride Chemical compound Cl.C=1C=CC=CC=1C(CCNC)OC1=CC=CC=C1C LUCXVPAZUDVVBT-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000779 poly(divinylbenzene) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- LYBIZMNPXTXVMV-UHFFFAOYSA-N propan-2-yl prop-2-enoate Chemical compound CC(C)OC(=O)C=C LYBIZMNPXTXVMV-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
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- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- UHHAYTZGQHSBAD-UHFFFAOYSA-N tert-butyl(ethenyl)silane Chemical class C(=C)[SiH2]C(C)(C)C UHHAYTZGQHSBAD-UHFFFAOYSA-N 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- BSUNTQCMCCQSQH-UHFFFAOYSA-N triazine Chemical group C1=CN=NN=C1.C1=CN=NN=C1 BSUNTQCMCCQSQH-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/51—Fixed connections for rigid printed circuits or like structures
- H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
- H01R43/007—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for elastomeric connecting elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0224—Conductive particles having an insulating coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Combinations Of Printed Boards (AREA)
- Conductive Materials (AREA)
- Wire Bonding (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The connecting structure (10) of the circuit member of the present invention possesses the upper circuit member (20,30) forming multiple circuit electrodes (22,32) of interarea (21a, 31a) at circuit substrate (21,31).By circuit electrode (22,32) to in the way of connect the circuit connecting elements (60) that circuit member (20,30) is mutual, be made up of the solidfied material of the circuit connection material of the present invention.The coated particle (50) that the some that the circuit connection material of the present invention contains the surface (51a) of adhesive composition and conducting particles (51) is coated to by insulating fine particles (52), the quality of insulating fine particles (52) is the 2/1000～26/1000 of the quality of conducting particles (51).
Description
The application is invention entitled " the circuit connection material that applicant submitted on January 6th, 2005
Expect, use its film-shaped circuit connection material, the connecting structure of circuit member and manufacture method thereof ",
The division Shen of the international application of Application No. PCT/JP2005/000070 (200580001944.X)
Please.
Technical field
The present invention relates to circuit connection material, use the film-shaped circuit connection material of this material, circuit
The connecting structure of component and manufacture method thereof.
Background technology
On Glass for Liquid Crystal Display panel, filled or COF by COG (Chip-On-Glass) structure
(Chip-On-Flex) structure dress etc. and structure dress liquid crystal drive IC.In COG structure fills, use bag
Containing the circuit connection material of conducting particles, liquid crystal drive IC is directly joined on face glass.
In COF structure fills, drive at the upper liquid crystal that engages of the flexible band (Flexible Tape) with metal wiring
Employ IC, use the circuit connection material containing conducting particles that these are engaged in face glass.
But, with the high-precision refinement of liquid crystal display in recent years, as the circuit of liquid crystal drive IC
The golden projection (gold bump) narrow spacing (pitch) of electrode is changed, narrow area, so there is picture
Between flow of conductive particle in circuit connection material is for adjacent circuit electrode, make asking of short circuit generation
Topic.It addition, conducting particles flows out between adjacent circuit electrode, then exist as being trapped in gold convex
Conductive particle subnumber in circuit connection material between block and face glass reduces, to circuit electricity
The problem that the connection resistance of interpolar rises and produces bad connection.
Then, as the method solving these problems, exploitation: with in circuit connection material at least
One side forms the adhesion coating of insulating properties, prevents the joint quality in COG structure dress or COF structure dress
The method (such as: with reference to Japanese documentation 1) that declines or by the whole surface of conducting particles with
The method (such as: with reference to Japanese documentation 2) of the coating film of insulating properties.
Japanese documentation 1: Japanese Unexamined Patent Publication 8-279371 publication
Japanese documentation 2: No. 2794009 publications (Fig. 2) of Japanese Patent Publication No.
Summary of the invention
But, the method forming the adhesion coating of insulating properties with the one side in circuit connecting elements, convex
Block area is less than 3000 μm2, increase conductive particle subnumber to obtain stable connection resistance
Situation, also has the leeway of improvement about the insulating properties between adjacent circuit electrodes.It addition, conducting electricity
The whole surface of particle with the method for the coating film of insulating properties, have to circuit electrode between company
Connecting resistance rises, it is impossible to the problem obtaining stable resistance.
Therefore, the purpose of the present invention be provide: can sufficiently lower to circuit electrode between company
Connecting resistance, and, the circuit that can sufficiently improve insulating properties between adjacent circuit electrode connects material
Expect, use these film-shaped circuit connection material, the connecting structure of circuit member and manufacturer thereof
Method.
In order to solve above-mentioned problem, the circuit connection material of the present invention is in order to will be in the first circuit
The first circuit member of multiple first circuit electrode is formed and in second circuit base on the interarea of substrate
The second circuit component of multiple second circuit electrode is formed, so that first and second is electric on the interarea of plate
Path electrode to state and the circuit connection material that connects, containing adhesive composition and conduction
The part surface of particle is coating coated particle by insulating fine particles, insulating fine particles
Quality is the 2/1000～26/1000 of the quality of conducting particles.
Make this circuit connection material, be present between first and second circuit member, via first and
Second circuit component and heat and pressurize, cured, obtain circuit member connecting structure and
In the connecting structure of the circuit member obtained, to circuit electrode between connection resistance sufficiently quilt
Reduce, substantially simultaneously improve the insulating properties between adjacent circuit electrode.
If here, the quality of insulating fine particles is less than the 2/1000 of the quality of conducting particles, then leading
Charged particle becomes sufficiently to be coated to by insulating fine particles.Therefore, adjacent circuit electricity
The insulating properties of interpolar, that is the insulating properties in the direction, face of circuit substrate becomes insufficient.On the one hand
If the quality of insulating fine particles exceedes the 26/1000 of the quality of conducting particles, then insulating fine particles
Son becomes superfluous coated electroconductive particles.Therefore, though conducting particles connect to circuit electrode
Each other, the connection resistance of the also thickness direction of increasing circuit substrate.
It addition, the circuit connection material of the present invention is in order to by shape on the interarea of the first circuit substrate
Become the first circuit member of multiple first circuit electrode and formed on the interarea of second circuit substrate
The second circuit component of multiple second circuit electrodes so that first and second circuit electrode to shape
State and the circuit connection material that connects, containing adhesive composition and the part surface of conducting particles
The coating coated particle by insulating fine particles, conducting particles is for having by macromolecular compound
The nucleome constituted, quality is nucleome quality 7/1000～the 86/1000 of insulating fine particles.
Make this circuit connection material, be present between first and second circuit member, via first and
Second circuit component and heat and pressurize, cured, obtain circuit member connecting structure and
In the connecting structure of the circuit member obtained, to circuit electrode between connection resistance sufficiently quilt
Reduce, substantially simultaneously improve the insulating properties between adjacent circuit electrode.
If here, the quality of insulating fine particles is less than the 7/1000 of the quality of nucleome, then conductive particle
Son becomes sufficiently to be coated to by insulating fine particles.Therefore, adjacent circuit electrode
Between insulating properties, that is the insulating properties in the direction, face of circuit substrate becomes insufficient.On the one hand,
If the quality of insulating fine particles exceedes the 86/1000 of the quality of nucleome, then insulating fine particles becomes
Superfluous coated electroconductive particles.Therefore, though conducting particles connect to circuit electrode mutual
, also increase the connection resistance on the thickness direction of circuit substrate.
It addition, the circuit connection material of the present invention is in order to by shape on the interarea of the first circuit substrate
Become the first circuit member of multiple first circuit electrode and formed on the interarea of second circuit substrate
The second circuit component of multiple second circuit electrodes, by first and second circuit electrode to in the way of
The circuit connection material connected, the part surface containing adhesive composition and conducting particles passes through
The coated particle that insulating fine particles is sub and coating, the proportion of coated particle is the proportion of conducting particles
97/100～99/100.
Make this circuit connection material, be present between first and second circuit member, via first and
Second circuit component and heat and pressurize, cured, obtain circuit member connecting structure and
In the connecting structure of the circuit member obtained, to circuit electrode between connection resistance sufficiently quilt
Reduce, substantially simultaneously improve the insulating properties between adjacent circuit electrode.
If here, the proportion of coated particle is less than the 97/100 of the proportion of conducting particles, then insulating properties
Micropartical becomes superfluous coated electroconductive particles.Therefore, though conducting particles connect to circuit
Electrode is mutual, also increases the connection resistance on the thickness direction of circuit substrate.On the one hand, if
The proportion of coated particle exceedes the 99/100 of the proportion of conducting particles, then conducting particles becomes leading to
Cross insulating fine particles and be sufficiently coated to.Therefore, the adjacent insulating properties between circuit electrode,
That is the insulating properties in the direction, face of circuit substrate becomes insufficient.
It addition, in coated particle, preferably the surface of conducting particles 5～60% micro-by insulating properties
Particle and be coated to.
If the surface of coated electroconductive particles is less than 5%, then because conducting particles becomes passing through insulation
Property micropartical and be sufficiently coated to, compared with situation about being coated on surface more than 5%, adjacent circuit
Interelectrode insulating properties, that is the insulating properties in the direction, face of circuit substrate becomes insufficient.One side
Face, if the surface of conducting particles is coated to more than 60%, then because of insulating fine particles surplus
Coated electroconductive particles, even if so conducting particles connect to circuit electrode between, compared with coating
The situation on surface less than 60%, increases the connection resistance on the thickness direction of circuit substrate.
Additionally, it is preferred that the mean diameter that mean diameter is conducting particles of insulating fine particles
1/40～1/10.
As insulating fine particles son mean diameter within the above range, compared with mean diameter departing from
The situation of this scope, the surface of conducting particles becomes the quilt easily by most insulating fine particles
Cover, if using circuit connection material so and manufacturing the connecting structure of circuit member, then can more carry
Insulating properties between high adjacent circuit electrode, that is the insulating properties in the direction, face in circuit substrate.
Additionally, it is preferred that insulating fine particles is to be made up of the polymer of free-radical polymerised material.?
This situation, because insulating fine particles becomes easily being attached to the surface of conducting particles, if so making
Manufacture the connecting structure of circuit member with circuit connection material so, then can more improve adjacent
Insulating properties between circuit electrode, that is the insulating properties on the direction, face of circuit substrate.
It addition, adhesive composition preferably comprises free-radical polymerised material and is produced by heating
The firming agent of free free radical.By comprising the circuit connection material of adhesive composition so,
First and second circuit member is easily connected when heating.
It addition, foregoing circuit connecting material is preferably constituted possibly together with by phenoxy group (phenoxy) resin
Thin film formation material.Thereby, it is possible to circuit connection material is machined to film like.It addition, it is electric
Road connecting material be difficult to produce rupture, broken or tacky etc. problem, become easily operating circuit
Connecting material.
Additionally, it is preferred that phenoxy resin contains in intramolecular is derived from dividing of polycyclc aromatic compound
Son structure.Thus, can be excellent at aspects such as cohesiveness, intermiscibility, thermostability, mechanical strengths
Circuit connection material.
It addition, polycyclc aromatic compound is preferably fluorenes (Fluorene).
It addition, the film-shaped circuit connection material of the present invention is by the circuit connection material shape of the present invention
Become film like to form.Thus, circuit connection material be difficult to generation rupture, broken or tacky etc.
Problem, become easily operating circuit connection material.
It addition, the connecting structure of the circuit member of the present invention is to possess: in the master of the first circuit substrate
The first circuit member of multiple first circuit electrode is formed and in the interarea of second circuit substrate on face
The second circuit component of upper formation multiple second circuit electrode, it is arranged at the interarea of the first circuit substrate
And between the interarea of second circuit substrate and make first and second circuit electrode mutually to shape
State connects the connection structure of the circuit member of the mutual circuit connecting elements of first and second circuit member
Make；Circuit connecting elements is to be made up of the solidfied material of the circuit connection material of the present invention, the first circuit
Electrode and second circuit electrode are for being electrically connected via coated particle.
In the connecting structure of circuit member so, can fully reduce to circuit electrode between
Connect resistance, the most fully improve the insulating properties between adjacent circuit electrode.
It addition, applying the DC voltage situation between adjacent circuit electrode of 50V, preferably phase
The adjacent resistance value between circuit electrode is 109More than Ω.
Such as the connecting structure by circuit member so, because the circuit electricity adjacent when its action
The insulating properties of interpolar, that is the insulating properties in the direction, face of circuit substrate is the highest, so becoming
The short circuit between adjacent circuit electrode can be substantially prevented from.
It addition, at least one party is preferably IC chip (chip) among first and second circuit member.
Additionally, it is preferred that the connection resistance between the first circuit electrode and second circuit electrode is 1 below Ω
.With the connecting structure of circuit member so can fully reduce to circuit electrode between connection electricity
Resistance, that is the connection resistance of the thickness direction of circuit substrate.
It addition, for the connecting structure of foregoing circuit component, preferably in first and second circuit electrode
At least one party has with from the group being made up of gold, silver, stannum, the metal of platinum family and indium tin oxide
The electrode surface layer selecting at least one and constitute.
It addition, for the connecting structure of foregoing circuit component, preferably in first and second circuit member
At least one party has to select from the group being made up of silicon nitride, silicon oxide compound and polyimide resin
The substrate surface layer selecting at least one and constitute.Thus, compared with being not with above-mentioned at substrate surface layer
The situation that material is constituted, more improves the adhesion strength of circuit member and circuit connecting elements.
It addition, the manufacture method of the connecting structure of the circuit member of the present invention, possess: in the first electricity
The first circuit member of multiple first circuit electrode is formed and in second circuit on the interarea of base board
Formed between the second circuit component of multiple second circuit electrode on the interarea of substrate, make the first electricity
Path electrode and second circuit electrode to state, make that the circuit connection material of the present invention is held to be deposited
Operation；And make its operation solidified by heating and pressurization circuit connection material.
As used this manufacture method, can fully reduce to circuit electrode between connection resistance, and
And, the connecting structure of the circuit member that the insulating properties between adjacent circuit electrode improves fully can be obtained
As passed through the present invention, it is possible to provide: in COG structure dress or COF structure dress in, to electricity
Low-resistance electrical connection that can be stable between path electrode, and, can suppress between adjacent circuit electrodes
The circuit connection material of short circuit generation rate；Use this film-shaped circuit connection material；Circuit member
Connecting structure and manufacture method.
It addition, such as pass through the present invention, it is possible to provide: even between adjacent circuit electrode that is convex
The driving IC that block spacing is narrow, the circuit connection material that connection reliability is the highest；Use this
Film-shaped circuit connection material；The connecting structure of circuit member and manufacture method thereof.
Accompanying drawing explanation
Fig. 1 is the profile of an embodiment of the connecting structure of the circuit member representing the present invention.
Fig. 2 is the section of an example of the coated particle representing the circuit connection material being used in the present invention
Figure.
Fig. 3 is the profile of an embodiment of the film-shaped circuit connection material representing the present invention.
Fig. 4 is cuing open of an operation of the manufacture method of the connecting structure of the circuit member representing the present invention
Face figure.
Fig. 5 has been expressed as obtaining the mass ratio A's of embodiments of the invention 1,2 and comparative example 2
The curve chart of calibration trace (calibration curve).
Fig. 6 has been expressed as obtaining the mass ratio B's of embodiments of the invention 1,2 and comparative example 2
The curve chart of calibration trace.
Fig. 7 has been expressed as the song of the calibration trace of the mass ratio A obtaining embodiments of the invention 3
Line chart.
Fig. 8 has been expressed as the song of the calibration trace of the mass ratio B obtaining embodiments of the invention 3
Line chart.
Fig. 9 is the coated particle C for embodiments of the invention 3, by thermal decomposition gas chromatography
Result that (gas chromatography) measures and the pyrogram (pyrogram) that obtains.
In figure: 10: the connecting structure of circuit member, 20: circuit member (the first circuit member), 21
: circuit substrate (the first circuit substrate), 21a: interarea, 22: circuit electrode (the first circuit electricity
Pole), 24,34: electrode surface layer, 30: circuit member (second circuit component), 31: circuit
Substrate (second circuit substrate), 31a: interarea, 32: circuit electrode (second circuit electrode),
35: substrate surface layer, 50: coated particle, 51: conducting particles, 51x: nucleome, 51y:
Outer layer, 51a: surface, 52: insulating fine particles, 60: circuit connecting elements, 61: thin
Film-like circuit connecting material.
Detailed description of the invention
Embodiment
Hereinafter, the circuit connection material that the present invention is described, the film-shaped circuit using this material connect material
Material, the connecting structure of circuit member and the embodiment of manufacture method thereof.And, at whole accompanying drawing
In, same symbol is used for same key element, the repetitive description thereof will be omitted.
(the 1st embodiment)
(connecting structure of circuit member)
Fig. 1 is that the connecting structure of the circuit member representing the present invention is (hereinafter referred to as " connecting structure
") the profile of the 1st embodiment.The connecting structure 10 of present embodiment possesses: the most right
To circuit member 20 (the first circuit member) and circuit member 30 (second circuit component), in
Between circuit member 20 and circuit member 30, the circuit connecting elements 60 connecting these is set.
Circuit member 20 possesses: circuit substrate 21 (the first circuit substrate) and have been formed on circuit
Multiple circuit electrodes 22 (the first circuit electrode) on the interarea 21a of substrate 21.Multiple circuit electricity
Pole 22 is such as configured to striated.On the other hand, circuit member 30 possesses: circuit substrate 31 (
Second circuit substrate), the multiple circuit electrodes 32 having been formed on the interarea 31a of circuit substrate 31
(second circuit electrode).Multiple circuit electrodes 32 are the most such as configured to striated.
As the concrete example of circuit member 20,30, can enumerate: semiconductor chip, resistive element chip
Or the substrate of the chip element of electric capacity chip etc. or printed base plate etc..Connection as connecting structure 10
Form, also has: the mutual connection of IC chip and the connection of chip carrying substrate, electric circuit, in
COG structure dress or IC chip and the glass substrate of COF structure dress or with flexible band (Flexible Tape
) connection etc..
In particular it is preferred that at least one party is IC chip among circuit member 20,30.
Electrode portion 23 that circuit electrode 22 is formed from the interarea 21a of circuit substrate 21 and shape
The electrode surface layer 24 in electrode portion 23 is become to constitute；Circuit electrode 32, is also formed from circuit
Electrode portion 33 on the interarea 31a of substrate 31 and the electrode surface layer being formed in electrode portion 33
34 are constituted.Here, preferred electrode surface layer 24,34 is respectively by gold, silver, stannum, the metal of platinum family
Or indium tin oxide (ITO) or these combinations of more than two kinds are constituted.That is, preferred circuit electricity
Pole 22,32 has gold, silver, stannum, the metal of platinum family or indium respectively in electrode portion 23,33
The electrode surface layer 24,34 that tin-oxide (ITO) or these combinations of more than two kinds are constituted.
Circuit member 30 has substrate surface layer 35 on circuit substrate 31 and circuit electrode 32.?
This, substrate surface layer 35 preferably with silicon nitride, silicon oxide compound or polyimide resin or these
The combination of more than two kinds and constitute.That is, preferred circuit component 30 has with silicon nitride, silicon oxidation
Compound or polyimide resin or these combinations of more than two kinds and the substrate surface layer 35 that constitutes.
Substrate surface layer 35 covers (coating) circuit substrate 31 and circuit electrode 32 or is attached to electricity
Base board 31 and circuit electrode 32.By this substrate surface layer 35, improve circuit member 30 and electricity
The adhesion strength of road connecting elements 60.
Particularly, circuit member 30 or feelings that circuit substrate 31 is flexible band (Flexible Tape)
Condition, preferable substrate surface layer 35 is made up of the organic insulation material of polyimide resin etc..It addition,
Being the situation of glass substrate at circuit substrate 31, substrate surface layer 35 is preferably with silicon nitride, silica
Compound, polyimide resin or silicone resin or these combinations of more than two kinds and constitute.
Circuit connecting elements 60, is arranged at interarea 21a and the circuit substrate 31 of circuit substrate 21
Between interarea 31a so that circuit electrode 22,32 to state connect circuit member 20,30
Each other.It addition, circuit connecting elements 60 possesses insulating component 40 and coated particle 50.Coating
Particle 50, for electrical connection circuit electrode 22 and circuit electrode 32, is led with coating with conducting particles 51
A part of the surface 51a of charged particle 51 insulating fine particles son 52 and constitute.In present embodiment
In, the quality of insulating fine particles 52 is the 2/1000～26/1000 of the quality of conducting particles 51.
As by connecting structure 10 so, to circuit electrode 22,32 between connection resistance fill
Dividing ground to reduce and stabilisation, the most adjacent insulating properties between circuit electrode 22,32 the most fully carries
High.
If the quality of insulating fine particles 52 is less than the 2/1000 of the quality of conducting particles 51, then lead
Charged particle 51 becomes can not be the most coating by insulating fine particles 52.Therefore, adjacent electricity
Insulating properties between path electrode 22,32, that is the insulating properties in the direction, face in circuit substrate 21,31
Become insufficient.On the other hand, if the quality of insulating fine particles 52 exceedes conducting particles 51
The 26/1000 of quality, then insulating fine particles 52 becomes superfluous coated electroconductive particles 51.Therefore
Even if, conducting particles 51 connect to circuit electrode 22,32 each other, also increasing circuit base
The connection resistance of the thickness direction of plate 21,31.
If the insulating properties being conceived between adjacent circuit electrode 22,32, then in connecting structure 10
, in the case of applying the DC voltage of 50V between adjacent circuit electrode 22,32, the most adjacent
Circuit electrode 22,32 between resistance value be 109More than Ω.In connecting structure 10 so,
Because the insulating properties between the circuit electrode 22,32 adjacent when this action, that is at circuit substrate 21
, 31 the insulating properties in direction, face the highest, so becoming preventing adjacent circuit electrode fully
22, the short circuit between 32.
If the connection resistance being conceived between adjacent circuit electrode 22,32, then at connecting structure 10
In, the connection resistance between preferred circuit electrode 22 and circuit electrode 32 is 1 below Ω.So
Connecting structure 10 in, can fully reduce to circuit electrode 22,32 between connection resistance,
That is the connection resistance of the thickness direction of circuit substrate 21,31.
It addition, in coated particle 50, preferably mean diameter d of insulating fine particles 52iFor leading
Mean diameter d of charged particle 51c1/40～1/10.Mean diameter diAnd dcBe for 10 with
Upper each particle measures insulating fine particles 52 to be observed by various microscopes and conductive particle respectively
The major diameter of son 51, obtained by the meansigma methods of measured value.It addition, as the microscope for observing,
It is adapted in use to scanning electron microscope.
Mean diameter d such as insulating fine particles 52iWithin the above range, ratio mean diameter diFor in
This extraneous situation, the surface 51a of conducting particles 51 becomes micro-easily by most insulating properties
Particle 52 and cover, in connecting structure 10 so, can further improve adjacent circuit electricity
Insulating properties between pole 22,32, that is the insulating properties in the direction, face of circuit substrate 21,31.
As conducting particles 51, the metal being made up of Au, Ag, Ni, Cu, scolding tin etc. can be enumerated
Particle or the particle etc. being made up of carbon etc..Conducting particles 51 is preferably hot molten metal particle.At this
Situation, because of by connect circuit electrode 22,32 each other time heating and pressurization and conducting particles 51
Being easily deformed, therefore conducting particles 51 increases with the contact area of circuit electrode 22,32, connects
Reliability improves.
Insulating fine particles 52 is preferably made up of the polymer of free-radical polymerised material.In this situation
, because insulating fine particles 52 becomes easily being attached to the surface 51a of conducting particles 51, so
Connecting structure 10 in, can further improve the insulating properties between adjacent circuit electrode 22,32,
That is the insulating properties in the direction, face of circuit substrate 21,31.
Free-radical polymerised material is the material with the functional group being polymerized by free radical, as
Free-radical polymerised material so can be enumerated: acrylate (acrylate) (also comprises the first of correspondence
Base acrylate (methacrylate), the most identical) compound, maleic anhydride contracting imines (
Maleimide) compound etc..Free-radical polymerised material both can be with monomer or the state of oligomer
Use, alternatively, it is also possible to and with monomer and oligomer.
As the concrete example of acrylate compounds, can enumerate: acrylic acid methyl ester., ethyl acrylate
, isopropyl acrylate, Isobutyl 2-propenoate, glycol diacrylate, diethylene glycol two propylene
Acid esters, trimethylolpropane trimethacrylate (trimethylolpropane triacrylate), four hydroxyl first
Methylmethane tetraacrylate (tetramethylolmethane tetracrylate), 2-hydroxyl 1,3-bis-propylene
Acyloxy propane, 2,2-double (4-(acryloyl-oxy ylmethoxy) phenyl propane, 2, the double (4-of 2-
(acryloxy polyethoxy) phenyl propane, dicyclopentenyl acrylate, tristane
Base acrylate, three (acryloyl-oxyethyl) isocyanates (tris-(acryloyloxyethyl)
Isocyanuate), acrylic acid urethane ester etc., these can individually or mix two or more and use.Separately
Outward, it is also possible to according to necessary and use hydroquinone (hydroquinone), methyl ether hydroquinone (
Methyl ether hydroquinone) inhibitor of polymerization such as class, it addition, from the sight making thermostability improve
From the point of view of Dian, preferred acrylate compound has from by dicyclopentenyl, adamantyl (tricyclo
Decanyl) at least 1 substituent group and selected in the group of triazine (triazine) ring composition.
Maleic anhydride contracting group with imine moiety is the most at least to contain more than 2 maleic anhydride contracting Asias
The compound of amido, as maleic anhydride contracting group with imine moiety so, can enumerate such as: 1-methyl
The double maleic anhydride contracting imines benzene of-2,4-, the double maleic anhydride contracting imines (phenylene of N, N '-m-phenylene
Bismaleimide), double maleic anhydride contracting imines (the phenylene bismaleimide of N, N '-p-phenylene
), N, a N '-toluene double maleic anhydride contracting imines, N, N '-4,4-diphenylene pair maleic anhydride contracting imines
(biphenylene bismaleimide), N, N '-4,4-(3,3 '-dimethyl diphenylene) double maleic acids
Acid anhydride contracting imines, N, N '-4,4-(3,3 '-dimethyl diphenylmethane) double maleic anhydride contracting imines,
N, N '-4,4-(3,3 '-diethyl diphenyl methane) double maleic anhydride contracting imines, N, N '-4,4-diphenyl
Methane double maleic anhydride contracting imines, N, N '-4, the double maleic anhydride contracting imines of 4-diphenyl propane,
N, N '-3, the double maleic anhydride contracting imines (diphenyl sulfon bismaleimide) of 3 '-diphenyl sulfo group,
N, N '-4, the double maleic anhydride contracting imines of 4-diphenyl ether, 2,2-pair of (4-(4-maleic anhydride contracting imines benzene oxygen
Base) phenyl) propane, 2,2-double (3-s-butyl-4,8-(4-maleic anhydride contracting imines phenoxy group) phenyl
) propane, 1, double (4-(4-maleic anhydride contracting imines phenoxy group) phenyl) decane of 1-, 4,4 '-ring Asia
Hexyl (cyclohexylidene)-bis-(1-(4-maleic anhydride contracting imines phenoxy group)-2-cyclohexyl benzene
, 2, double (4-(4-maleic anhydride contracting imines phenoxy group) phenyl) HFC-236fa of 2-etc..These can be single
Solely or mix two or more and use.
It addition, as in figure 2 it is shown, conducting particles 51 can have nucleome 51x and coating nucleome 51x
Surface and the outer layer 51y that formed.And, Fig. 2 is the profile of the example representing coated particle.
Can also the conducting particles 51 of conducting particles 51 to Fig. 2 of permutation graph 1.
Nucleome 51x is made up of macromolecular compound, as this macromolecular compound, is adapted in use to:
Polystyrene, polydivinylbenezene (polydivinyl benzene), polyacrylate, epoxy resin
, phenol resin, the various Plastics of benzo tripolycyanamide (benzoguanamine) resin etc., benzene second
The various rubber-like etc. of alkene-butadiene rubber or silicone rubber etc..It addition, using these as main one-tenth
Point, also can use the various additives of cross-linking agent, firming agent, age resister etc..In this situation
, because of by connect circuit electrode 22,32 each other time heating and pressurization and conducting particles 51 holds
Yielding, therefore conducting particles 51 increases with the contact area of circuit electrode 22,32, and connection can
Improve by property.
In the present embodiment, the quality of insulating fine particles 52 is the quality of nucleome 51x
7/1000～86/1000.If the 7/1000 of the quality that the quality of insulating fine particles 52 is less than nucleome 51x
, then conducting particles 51 becomes sufficiently to be coated to by insulating fine particles 52.Therefore
, the adjacent insulating properties between circuit electrode 22,32, that is the direction, face of circuit substrate 21,31
Insulating properties become insufficient.On the one hand, if the quality of insulating fine particles 52 exceedes nucleome 51x
Quality 86/1000, then insulating fine particles 52 becomes superfluous ground coated electroconductive particles 51.Cause
This, though conducting particles 51 connect to circuit electrode 22,32 each other, also increasing circuit
The connection resistance of the thickness direction of substrate 21,31.
It addition, nucleome 51x can also be made up of dielectric glass, pottery, plastics etc..I.e.
Make as this situation, because of by connect circuit electrode 22,32 each other time heating and pressurization and conduct electricity
Particle 51 is easily deformed, and therefore conducting particles 51 increases with the contact area of circuit electrode 22,32
, connection reliability improves.Additionally, it is preferred that conducting particles 51 is by dielectric glass, pottery
, the composition such as plastics nucleome 51x surface on be formed with the outer layer 51y being made up of precious metal.
Outer layer 51y, in order to obtain the sufficient up time, does not the most use the transition of Ni, Cu etc.
Metal class is constituted, but is made up of, more preferably by Au structure the precious metal of Au, Ag, platinum family etc.
Become.It addition, the nucleome 51x that conducting particles 51 can also will be made up of the transition metal-type of Ni etc.
It is coated to the outer layer 51y being made up of the precious metal of Au etc..
The thickness of the outer layer 51y of precious metal is preferably more than 100 angstroms (Angstrom).At this
Situation, can obtain connection resistance well between circuit electrode 22,32.It addition, by Ni's etc.
The surface of the nucleome 51x that transition metal is constituted forms the situation of the outer layer 51y of precious metal, your gold
The thickness of the outer layer 51y belonging to class is preferably more than 300 angstroms.If the thickness of the outer layer 51y of precious metal
Degree is less than 300 angstroms, the most such as, when mixing dispersing conductive particles 51, produce defect at outer layer 51y
Deng.Producing the situation of this defect etc., producing free free radical based on redox, have
Make the doubt that the keeping quality of circuit connection material declines.Then, because the thickness of outer layer 51y is become
Thick and the effect of outer layer 51y is the most saturated, thus the thickness of outer layer 51y be preferably 1 micron (
Micrometer) below.
And, the quality of insulating fine particles 52 is relative to the quality of the conducting particles 51 of the present invention
The value of ratio (mass ratio A), and the matter that the quality of insulating fine particles 52 is relative to nucleome 51x
The value of the ratio (mass ratio B) of amount, uses the value measured by thermal decomposition gas chromatography.Heat point
Solve gas chromatography, it is known that various plastics or the qualitative analysis of elastomeric material can be used in and those are total to
Quantitatively etc. (reference, Han Chuan likes three youths, the straight firm volume of great Li to the composition of polymers or mixing (blend) thing
Work, " thermal decomposition gas chromatography introduction ", P121～P176, Ji Baotang publishing company).
The present inventor etc. find, as quality measurement than A and the method for the value of mass ratio B, use
The result of thermal decomposition gas chromatography, can obtain well is quantitative.Therefore, in the present invention, matter
Amount ratio A and the value of mass ratio B, use the calibration trace by thermal decomposition gas chromatography to obtain
Value.Now, the calibration trace used, it is not limited to the material identical with conducting particles 51
, the material identical with nucleome 51x or with insulating fine particles son 52 identical materials and the school that is made
Positive curve, it is also possible to be the Plastic of alternative same kind, rubber-like, radical polymerization syzygy thing
The polymer of matter and the calibration trace that is made.
The peak of the thermal decomposition gas chromatography used in the mensuration of mass ratio A and the value of mass ratio B
Value (peak), is not particularly limited, can use from conducting particles 51, nucleome 51x and insulating properties
The peak value of the thermal decomposition composition of micropartical 52.Point in these are thermally decomposed into, if using composition to mould
Material class, rubber-like, free-radical polymerised material main monomer thermal decomposition composition peak value, then by
In mass ratio A and mass ratio B value quantitative raising but preferably.
(circuit connection material)
Foregoing circuit connecting elements 60, is made up of the solidfied material of circuit connection material.Here, for
Circuit connection material illustrates.This circuit connection material, combines containing coated particle and binding agent
Thing.It addition, as be described hereinafter, circuit connection material can also contain further thin film formation material, its
It contains composition etc..
<coated particle>
The composition of the coated particle being contained in circuit connection material constitutes identical with above-mentioned coated particle 50
.Constitute the conducting particles 51 of coated particle 50, preferred relative to adhesive composition 100 parts by volume
Adding 0.1～30 parts by volume, its addition uses according to purposes.And, in order to prevent based on surplus
The short circuit etc. of adjacent circuit electrodes of conducting particles 51, preferably make conducting particles 51 add 0.1～10
Parts by volume.
<adhesive composition>
Adhesive composition is preferably comprised free-radical polymerised material and is produced by heating free
The firming agent of free radical.By the circuit connection material containing adhesive composition so, circuit
Component 20,30 is easily connected when heating.
As free-radical polymerised material, can illustrate and be used in the freedom of insulating fine particles 52
The material that base polymeric agents is identical.Free-radical polymerised material can be with monomer or the shape of oligomer
State and use, alternatively, it is also possible to and with monomer or oligomer.
The firming agent of free free radical is produced by heating, free for being produced by heat resolve
The firming agent of free radical, as firming agent so, can enumerate: per-compound, azo system
Compound etc..So firming agent, by purpose connect temperature, the Connection Time, the up time (
Pot life) etc. and suitably select.Wherein, from improving reactivity, make the up time improve
From the viewpoint of, the preferably temperature of 10 hours half-life is more than 40 DEG C and half-life 1 minute
Temperature is the organic peroxide of less than 180 DEG C, and the more preferably temperature of 10 hours half-life is 60 DEG C
Above and the organic peroxide that temperature is less than 170 DEG C of 1 minute half-life.
The use level of firming agent, in the situation that the Connection Time is less than 10 seconds, in order to obtain sufficiently
Response rate, relative to free-radical polymerised material and the thin film formation material that coordinates as desired
With 100 weight portions, preferably 0.1～30 weight portions, more preferably 1～20 weight portions.
The use level of firming agent is in the case of less than 0.1 weight portion, it is impossible to obtain sufficient response rate
, exist and become being difficult to obtain good adhesion strength or the little tendency connecting resistance.If firming agent
Use level more than 30 weight portions, then the mobility of adhesive composition declines, connects resistance and rise
, there is the tendency that the up time (pot life) of adhesive composition shortens.
More specifically, as by heating and produces dissociate free radical firming agent, can enumerate:
Diacyl peroxide, peroxy dicarbonate, peroxyester, ketal peroxide, dialkyl group mistake
Oxide, hydroperoxides, silyl peroxides etc..It addition, by suppression circuit electrode 22,
From the viewpoint of the corrosion of 32, firming agent is preferably the chloride ion contained in firming agent or organic acid
Concentration is at below 5000ppm, and the solidification that more preferably organic acid of generation is few after heat resolve
Agent.So firming agent, specifically, selected from peroxyester, dialkyl peroxide, hydrogen mistake
Oxide, silyl peroxides, preferably can obtain the peroxyester of high response.Above-mentioned firming agent
Can suitably mix and use.
As diacyl peroxide, can enumerate: isobutyl peroxide, 2,4-dichloro-benzoyl mistake
Oxide, 3,5,5-trimethyl acetyl base peroxide, sim peroxides, lauroyl peroxide
Compound, stearyl peroxide, succinyl group peroxide (succinic peroxide), benzene first
Acyl group peroxidating toluene, benzoyl peroxide.
As peroxy dicarbonate, can enumerate: two-n-peroxydicarbonate, diisopropyl
Base peroxy dicarbonate, double (4-t-butylcyclohexyl) peroxy dicarbonate, two-2-ethyoxyls
Methoxyl group peroxy dicarbonate, two (2-ethylhexyl peroxidating) two carbonic esters, dimethoxy fourth
Base peroxy dicarbonate, two (3-methyl-3 methoxybutyl peroxidating) two carbonic esters etc..
As peroxyester, can enumerate: cumyl new decanoate ester peroxide, 1,1,3,3-tetramethyl butyl
New decanoate ester peroxide, 1-cyclohexyl-1-Methylethyl new decanoate ester peroxide, t-hexyl peroxidating are new
Decanoin, t-butyl peroxy propionic ester, 1，1，3，3-tetra-methylbutyl peroxy-2-ethylhexanoate,
2,5-dimethyl-2,5-bis-(2-ethylhexanoyl-peroxy) hexane, 1-cyclohexyl-1-Methylethyl mistake
Oxidation-2-ethylhexanoate, t-hexyl peroxidating-2-ethylhexanoate, t-butyl peroxy-2-ethyl hexyl
Acid esters, t-butyl peroxy isobutyrate, 1,1-double (t-butyl peroxy) hexamethylene, t-hexyl mistake
Oxidation isopropyl list carbonate, t-butyl peroxy-3,5,5-tri-methyl hexanoic acid esters, the t-butyl peroxy moon
Cinnamic acid ester, 2,5-dimethyl-2,5-bis-(m-toluyl peroxidating) hexane, t-butyl peroxy are different
Propyl group monocarbonate, t-butyl peroxy-2-ethylhexyl monocarbonate, t-hexyl perbenzoic acid
Ester, t-butyl peroxy acetas etc..
As ketal peroxide, can enumerate: 1,1-double (t-hexyl peroxidating)-3,3,5-3-methyl cyclohexanols
Alkane, 1, double (t-hexyl peroxidating) hexamethylene of 1-, 1, double (the t-butyl peroxy)-3 of 1-, 3,5-front threes
Butylcyclohexane, 1,1-(t-butyl peroxy) cyclododecane, 2, double (t-butyl peroxy) decane of 2-
Deng.
As dialkyl peroxide, can enumerate: α, α '-bis-(t-butyl peroxy) diisobutyl
Benzene, dicumyl peroxide, 2,5-dimethyl-2,5-bis-(t-butyl peroxy) hexane, t-butyl are withered
Base peroxide etc..
As hydroperoxides, can enumerate: diisopropyl benzene hydroperoxides, cumene hydroperoxidation
Thing etc..
As silyl peroxides, can enumerate: t-butyl TMS peroxide, double (
T-butyl) dimethylsilyl peroxide, t-butyl trivinyl silyl peroxides, double (
T-butyl) divinyl silyl peroxides, three (t-butyl) vinyl silanes base peroxide
, t-butyl triallyl silyl peroxides, double (t-butyl) diallylsilane base peroxidating
Thing, three (t-butyl) allyl silicane base peroxide.
These firming agent, can individually or mix two or more and use, it is also possible to mixed decomposition promotees
Enter agent, inhibitor etc. and use.It addition, by this firming agent with polyurethane series, the high score of Polyester
Sub-materials etc. are coated to and micro encapsulation, because extending the up time but preferable.
It addition, above-mentioned circuit connection material preferably further contains be made up of phenoxy resin thin
Film formation material.Thus, become processing circuit connecting material being film like, film like electricity can be obtained
Road connecting material.
Fig. 3 is the profile of the 1st embodiment of the film-shaped circuit connection material representing the present invention
.The film-shaped circuit connection material 61 of present embodiment, possesses: by above-mentioned adhesive composition structure
The film like insulating component 41 become and coated particle 50.This film-shaped circuit connection material 61 is
Form to film like with the formation of above-mentioned circuit connection material.
If circuit connection material contains thin film formation material, then circuit connection material is difficult to generation and ruptures
, broken or tacky etc. problem, become easily operating electricity in common state (normal temperature and pressure)
Road connecting material.It addition, film-shaped circuit connection material 61, if divided to containing by heating
And produce the layer of the firming agent of free free radical and more than 2 layers of the layer containing coated particle 50, then
Up time improves.
<thin film formation material>
So-called thin film formation material, refers to constitute compositions in solid fraction as thin film
The situation of shape, makes the processing ease of this thin film, give be not easy to rupture, crush, tacky machine
The material of tool characteristic etc., also refers to enter as thin film under common state (normal temperature and pressure)
The material of row operation.As thin film formation material, can enumerate: phenoxy resin, polyvinyl first
Acetal (polyvinyl formal) resin, polystyrene resin, polyvinyl butyral resin, poly-
Ester resin, polyamide (Polyamide) resin, dimethylbenzene (xylene) resin, polyurethane resin
Deng.Wherein, from the point of view of cohesiveness, intermiscibility, thermostability, the excellent angle of mechanical strength, preferably
Phenoxy resin.
Phenoxy resin is to instigate 2 officials' energy phenols and epihalohydrins (epihalohydrin) to react to high score
Son amount, or make 2 functional epoxy resins and 2 officials energy phenols addition polymerization (polyaddition) obtain
The resin arrived.Phenoxy resin can be by such as: can phenols 1 mole and chloropropylene oxide by 2 officials
0.985～1.015 mole, in the presence of the catalyst of alkali metal hydroxide etc., non-reacted
In solvent, the temperature of 40～120 DEG C make it react and obtain.It addition, as phenoxy resin, from tree
From the viewpoint of the characteristic of the machinery of fat or thermal property, particularly preferably by 2 functionality epoxy resin
It is set to epoxy radicals/phenol hydroxy=1/0.9～1/1.1, at alkali gold with the equivalent proportion that coordinates of 2 functionality phenols
In the presence of belonging to the catalyst of compound, organophosphor based compound, cyclic amine based compound etc., in boiling
Point be more than 120 DEG C amide system, ether system, ketone system, lactone system, alcohol system etc. organic solvent in,
Make its addition polymerization so that reaction solid is divided into the condition of below 50 weight portions to be heated to 50～200 DEG C and
Obtain.
As 2 functional epoxy resins, can enumerate: bisphenol A type epoxy resin, bisphenol F type epoxy
Resin, bisphenol-A D-ring epoxy resins, bisphenol-s epoxy resin etc..2 officials' energy phenols are for having 2
The phenols of individual phenol hydroxy, as 2 officials' energy phenols so, can enumerate such as: bisphenol-A,
The bisphenols etc. of Bisphenol F, bisphenol-A D, bisphenol S etc..
It addition, phenoxy resin preferably contains in its intramolecular results from polycyclc aromatic compound
Molecular configuration.Thus, can be excellent at aspects such as cohesiveness, intermiscibility, thermostability, mechanical strengths
Good circuit connection material.
As polycyclc aromatic compound, can enumerate such as: naphthalene (Naphthalene), biphenyl,
The dihydroxy compounds of acenaphthene (Acenaphthene), fluorenes, dibenzofurans, anthracene, phenanthrene etc.
Deng.Here, polycyclc aromatic compound is preferably fluorenes.And, polycyclc aromatic compound is special
It is preferably 9,9 '-bis-(4-hydroxyphenyl) fluorenes.
And, phenoxy resin can also be modified by free-radical polymerised functional group.Additionally
, phenoxy resin can be used alone, can also mix two or more and use.
<other containing composition>
The circuit connection material of present embodiment can also comprise further by by acrylic acid, acrylic acid
The group that ester, methacrylate and acrylonitrile are constituted selects at least one gathering as monomer component
Compound or copolymer.At this from stress relax excellent from the perspective of, preferably and with comprise containing contract
The epihydric alcohol acrylic ester of water glycerol ether or the copolymerization system of epihydric alcohol methylpropenoic acid ester
Acrylic rubber.The molecular weight (weight average molecular weight) of these acrylic rubbers, from improving binding agent
From the point of view of cohesive force viewpoint, preferably more than 200,000.
Alternatively, it is also possible in the circuit connection material of present embodiment, contain filler further
, softening agent, accelerator, age resister, fire retardant, pigment, thixotroping (thixotropic) agent
, coupling agent, phenol resin, melmac, isocyanates etc..
Containing in the case of filler in circuit connection material, owing to improving connection reliability etc.,
Therefore it is preferable.For filler, as long as its maximum diameter is less than the mean diameter of conducting particles 51
Then can use.The use level of filler, is preferably 5～60 relative to adhesive composition 100 parts by volume
Parts by volume.If use level is more than 60 parts by volume, then connection reliability is had to improve the tendency that effect is saturated
, on the other hand, become insufficient tendency in the effect having filler to add less than 5 parts by volume.
As coupling agent, for containing ketimide (ketimine), vinyl, acrylic, amino
, epoxy radicals or the compound of NCO, be preferable because cohesiveness can be improved.
Concrete as there being the silane coupling agent of amino, can enumerate: N-β (amino-ethyl) γ-ammonia
Base propyl trimethoxy silicane, N-β (amino-ethyl) gamma-amino hydroxypropyl methyl dimethoxysilane
, γ aminopropyltriethoxy silane, N-phenyl-gamma-amino propyl trimethoxy silicane etc..Make
For having the silane coupling agent of ketimide, can enumerate: make acetone, methyl ethyl ketone, methyl tert-butyl
The material that the ketonic compound of base ketone etc. and the silane coupling agent with above-mentioned amino react and must obtain.
Then, about the manufacture method of above-mentioned connecting structure 10, use Fig. 1, Fig. 3 and Fig. 4 and
Explanation.Fig. 3 represents cuing open of the film-shaped circuit connection material used in the manufacture of connecting structure 10
Face figure, Fig. 4 are the profiles of an operation of the manufacture method representing connecting structure 10.
(manufacture method of the connecting structure of circuit member)
First, circuit member 20,30 is prepared.On the other hand, prepare to be configured to film like
Film-shaped circuit connection material 61 (with reference to Fig. 3).Then, at circuit member 20 and circuit member
Between 30, the film-shaped circuit that above-mentioned circuit connection material is configured to film like is made to connect
Material 61 clamping exists.That is, between circuit member 20 and circuit member 30, at circuit electricity
Pole 22 and circuit electrode 32 be to state, make film-shaped circuit connection material 61 clamping existence
.Specifically, such as: on circuit member 30, load film-shaped circuit connection material 61, then
Circuits component 20 is uploaded at film-shaped circuit connection material 61.Now, make circuit electrode 22 with
Circuit electrode 32 the most relatively, configures circuit member 20 and circuit member 30.Here, because
Film-shaped circuit connection material 61 easily operates for film like.Therefore, film like electricity can easily be made
Road connecting material 61 clamping is present between circuit member 20,30, can make circuit member 20,30
Connect operation and become easy.
Then, heat film-shaped circuit connection material 61 via circuit member 20,30, exist simultaneously
The arrow A of Fig. 4 and B direction are heated and pressurize and implement cured (with reference to Fig. 4), at circuit
Circuit connecting elements 60 (with reference to Fig. 1) is formed between component 20,30.Cured is can be by one
As method carry out, its method is the selection suitable by adhesive composition.And, it is possible to
With when heating and pressurization, by either one side of circuit member 20,30, irradiate light and carry out circuit
The location of electrode 22,32.
If manufacturing connecting structure 10 in this way, then can obtain and fully reduce and stabilisation pair
To circuit electrode 22,32 between connection resistance, simultaneously fully improve adjacent circuit electrodes 22,32
Between the connecting structure 10 of insulating properties.
(the 2nd embodiment)
(connecting structure of circuit member)
The connecting structure 10 of present embodiment possesses: mutually to circuit member 20 (the first circuit
Component) and circuit member 30 (second circuit component), circuit member 20 and circuit member 30 it
Between, the circuit connecting elements 60 connecting these is set.
Circuit member 20,30 has the structure identical with the 1st embodiment, and preferably by identical
Material constitute.
Circuit connecting elements 60 is arranged at the interarea 21a of circuit substrate 21 and the master of circuit substrate 31
Between the 31a of face, mutual to connecting circuit member 20,30 to ground with circuit electrode 22,32.Separately
Outward, circuit connecting elements 60 possesses: insulating component 40, conducting particles 51 surface 51a one
Part is by the coating coated particle 50 of insulating fine particles 52.In the present embodiment, coating grain
The proportion of son 50 is, the 97/100～99/100 of the proportion of conducting particles 51.Through thus coated particle
50, electrical connection circuit electrode 22 and circuit electrode 32.
Here, circuit connecting elements 60, because being made up of the solidfied material of circuit connection material described later
, so in connecting structure 10, can reduce fully to circuit electrode 22,32 between company
Insulating properties between connecting resistance, the most fully raising adjacent circuit electrodes 22,32.
(circuit connection material)
The circuit connection material of present embodiment, containing adhesive composition and coated particle 50.If
This circuit connection material is made to be present between circuit member 20,30, via circuit member 20,30
And heat and pressurization, cured, and obtain connecting structure 10, then at the connecting structure 10 obtained
In, reduce fully to circuit electrode 22,32 between connection resistance, simultaneously fully improve phase
Insulating properties between adjacent circuit electrode 22,32.
<adhesive composition>
As adhesive composition, can illustrate identical with the adhesive composition at the 1st embodiment
Material.
<coated particle>
Coated particle 50 is that a part of the surface 51a of conducting particles 51 is by insulating fine particles
52 and the coated particle that is coated to.The proportion of the coated particle 50 of present embodiment is conducting particles
The 97/100～99/100 of the proportion of 51.
If the proportion of coated particle 50 is less than the 97/100 of the proportion of conducting particles 51, then insulating properties
Micropartical 52 becomes superfluous ground coated electroconductive particles 51.Therefore, even if conducting particles 51 is to connect
To circuit electrode 22,32 each other, the also thickness direction of increasing circuit substrate 21,31
Connect resistance.On the other hand, if the proportion of coated particle 50 exceedes the proportion of conducting particles 51
99/100, then conducting particles 51 becomes to be coated to fully by insulating fine particles 52.
Therefore, the adjacent insulating properties between circuit electrode 22,32, that is the face of circuit substrate 21,31
The insulating properties in direction becomes insufficient.
It addition, in coated particle 50, the 5 of the preferably surface 51a of conducting particles 51～60% lead to
Cross insulating fine particles 52 and be coated to.
If the surface 51a of coated electroconductive particles 51 is less than 5%, then because conducting particles 51 becomes not
Can be coated to fully by insulating fine particles sub 52, compared with being more than 5% quilt at surface 51a
Coating situation, the insulating properties between adjacent circuit electrodes 22,32, that is circuit substrate 21,31
The insulating properties in direction, face become insufficient.On the other hand, if the surface 51a of conducting particles 51 surpasses
Cross 60% and be coated to, then because of insulating fine particles 52 superfluous ground coated electroconductive particles 51, so
Even if conducting particles 51 connect to circuit electrode 22,32 between, compared with at coating surface 51a
It is the situation of less than 60%, the connection resistance of the thickness direction of increasing circuit substrate 21,31.
Conducting particles 51 and insulating fine particles 52 preferably have the structure identical with the 1st embodiment
Make, and be made up of identical material.
<thin film formation material>
The circuit connection material of present embodiment, preferably further contain with at the 1st embodiment
The thin film formation material that thin film formation material is identical.Thus, energy processing circuit connecting material is become extremely
Film like, can obtain film-shaped circuit connection material.
<other containing composition>
The circuit connection material of present embodiment, further preferably containing with at the 1st embodiment
Other contains the material that composition is identical.
(manufacture method of the connecting structure of circuit member)
Manufacture method as the connecting structure of the circuit member of present embodiment is preferably real with the 1st
The method that the manufacture method of the connecting structure executing the circuit member of mode is identical.
Above, explain the present invention preferred embodiment, and the present invention is not limited to
State each embodiment.
Such as: in above-mentioned 1st and the 2nd embodiment, in connecting structure 10, it is also possible to electricity
Path electrode 22,32 has electrode surface layer 24,34, and either one of circuit electrode 22,32 has
Electrode surface layer.Alternatively, it is also possible to circuit electrode 22,32 does not all have electrode surface layer.That is,
In above-mentioned 1st and the 2nd embodiment, it is also possible to circuit electrode 22,32 all has electrode surface
Layer 24,34, and among circuit electrode 22,32, at least one party has electrode surface layer.
It addition, in above-mentioned 1st and the 2nd embodiment, it is also possible to the circuit structure of connecting structure 10
Part 30 has substrate surface layer 35, and only circuit member 20 has substrate surface layer.It addition, also
Substrate surface layer can be all had with circuit member 20,30.And, circuit member 20,30 is the most not
There is substrate surface layer.That is, in above-mentioned 1st and the 2nd embodiment, it is also possible to circuit structure
Part 30 has substrate surface layer 35, and among circuit member 20,30, at least one party has substrate table
Surface layer.
It addition, in above-mentioned 1st and the 2nd embodiment, use film-shaped circuit connection material 61
And manufacture connecting structure 10, it is also possible to it is not limited to film-shaped circuit connection material 61, uses and do not comprise
The circuit connection material of thin film formation material.Even if in this situation, circuit connection material is made to be dissolved in
Solvent, as its solution is coated circuit member 20,30 either one and make it be dried, circuit can be made
Connecting material clamping is present between circuit member 20,30.
It addition, in above-mentioned 1st and the 2nd embodiment, circuit connection material contains conducting particles
51, conducting particles 51 can also not contained.Even if in this case, also through to circuit electricity
Pole 22,32 each directly contact and electrically connected.And, in the feelings containing conducting particles 51
Under condition, compared with not containing the situation of conducting particles 51, can relatively stable electrical connection.
Embodiment
Hereinafter, use embodiment that present disclosure is further illustrated, and the present invention is not
It is defined to these embodiments.
(embodiment 1)
(1) making of coated particle
First, on the surface of the crosslinked polystyrene particle (PSt) of mean diameter 5 μm, with non-
Electrolysis plating arranges the nickel dam of thickness 0.2 μm, and by arranging thickness 0.04 in the outside of this nickel dam
The layer gold of μm, obtains being equivalent to the coated film plastic particle (PSt-M) of conducting particles 51.This is plated
The some on the surface of film plastic pellet, by being equivalent to the methacrylic acid of insulating fine particles 52
The polymer of methyl ester, is coated to i.e. by polymethyl methacrylate (PMMA), obtain with
The coated particle A of mean diameter 5.2 μm that insulating fine particles of mean diameter 0.2 μm is coating
.Coated particle A is that the 20% of the surface of conducting particles is coated to, and the proportion after coating is coating
The mode of the 98/100 of front proportion is coated to.And, mean diameter is to sweep type electronics from based on retouching
The value that microscopical observation and the measured value that obtains are calculated.
(2) thermal decomposition gas chromatography measures
First, in order to make about mass ratio A, (quality of insulating fine particles is to conducting particles
The ratio of quality) calibration trace and carry out thermally decompose gas chromatography measure.In measurement result,
As the peak value (peak) of the thermal decomposition composition of coated film plastic particle (PSt-M), employ benzene second
Peak value (peak) the area I of alkenest.It addition, as polymethyl methacrylate (PMMA)
The peak value (peak) of thermal decomposition composition, employs the peak area of methyl methacrylate (MMA)
IMMA.Peak area ratio (I has been calculated by theseMMA/Ist)。
It addition, quality W of coated film plastic particle (PSt-M)PST-MBe equivalent to conducting particles 51
Quality, quality W of polymethyl methacrylate (PMMA)PMMABe equivalent to insulating fine particles
The quality of 52.Thus calculate mass ratio A (WPMMA/WPST-M).Then, about peak area
Than (IMMA/Ist) and mass ratio A (WPMMA/WPST-M) relation, be made and be shown in Fig. 5
Calibration trace.The calibration trace of Fig. 5 has good rectilinearity.
Then, in order to make about mass ratio B, (quality of insulating fine particles is to the quality of nucleome
Than) calibration trace and carry out thermally decompose gas chromatography measure.In measurement result, as friendship
The peak value (peak) of the thermal decomposition composition of polystyrene particle (PSt), employs cinnamic peak
Value (peak) area Ist.It addition, as polymethyl methacrylate (PMMA) be thermally decomposed into
The peak value (peak) divided, employs the peak area I of methyl methacrylate (MMA)MMA。
Peak area ratio (I has been calculated by theseMMA/Ist)。
It addition, quality W of polymethyl methacrylate (PMMA)PMMABe equivalent to insulating properties micro-
The quality of particle 52, quality W of crosslinked polystyrene particle (PSt)PStBe equivalent to nucleome 51x
Quality.Mass ratio B (W has been calculated by thesePMMA/WPSt).Then, about peak area ratio
(IMMA/Ist) and mass ratio B (WPMMA/WPSt) relation, be made the correction being shown in Fig. 6
Curve.The calibration trace of Fig. 6 has good rectilinearity.
Then, about coated particle A, carry out to be shown in the condition determination of table 1 thermally decomposing gas
Phase chromatography measures, and has calculated peak area ratio (IMMA/Ist).Then, according to this peak area ratio
, the calibration trace of Fig. 5 calculating the result of mass ratio A, mass ratio A is 9/1000, by Fig. 6
Calibration trace calculate the result of mass ratio B, mass ratio B was 29/1000 (with reference to table 2).
(table 1)
(table 2)
(3) making of circuit connection material
First, bisphenol A type epoxy resin and bisphenol-A (bisphenol A) synthetic glass shift
(glasstransition) temperature is the phenoxy resin of 80 DEG C.By this phenoxy resin 50g, dissolve
In being toluene (boiling point 110.6 DEG C, SP value 8.90)/ethyl acetate (boiling point 77.1 DEG C in weight ratio
, SP value 9.10)=the mixed solvent of 50/50, divide the solution of 40 weight % as solid.Then,
Be adjusted to solid point weight ratio be phenoxy resin 60g, dicyclopentenyl omega-diol diacrylate (
Dicyclopentenyldialcoholdiacrylate) 39g, phosphate ester (phosphate) type acrylate
1g, tertiary hexyl peroxidating-2-ethylhexanoate (t-hexyl peroxy-2-ethyl hexanonate) 5g
Solution.
Then, coated particle A is made to coordinate dispersion 5 volume % to adjust solution in above-mentioned solution.So
After, by this solution, use apparatus for coating to coat surface and process thickness 80 μm simultaneously
PET (polyethylene terephthalate) thin film, by 70 DEG C, the hot air drying of 10 points,
The 1st film-like material of thickness 10 μm is obtained in PET film.
It addition, be adjusted to solid point weight ratio be phenoxy resin 60g, dicyclopentenyl glycol two
Acrylate 39g, phosphate ester (phosphate) type acrylate 1g, tertiary hexyl peroxidating-2-second
Other solution of base alkyl caproate 5g.By this solution, apparatus for coating is used to coat surface and process
PET (polyethylene terephthalate) thin film of thickness 80 μm of one side, by 70 DEG C,
The hot air drying of 10 points, obtains being made up of adhesive agent compositions of thickness 10 μm in PET film
The 2nd film-like material.
By the 1st above-mentioned film-like material and the 2nd film-like material with laminating machine (Laminater)
Bonding, obtains two layers of film-shaped circuit connection material constituted.
(4) making of the connecting structure of circuit member
First, as the first circuit member, prepare to be configured with projection area 50 μ m 50 μm,
Away from 100 μm, the IC chip of the golden projection of highly 20 μm.Then, as second circuit component
, be ready on the glass substrate of thickness 1.1mm be deposited with indium tin oxide (ITO) circuit and shape
The ito substrate (sheet resistance ＜ 20 Ω/) become.
Then, make the clamping of above-mentioned film-shaped circuit connection material be present in IC chip and ito substrate it
Between, IC chip, film-shaped circuit connection material and ito substrate are held under the arm with quartz glass and polishing head
Hold, with 200 DEG C, 100MPa heating in 10 seconds and pressurization.So effect, via film like electricity
Road connecting material connects IC chip and ito substrate.Now, in advance by film like on ito substrate
The bonding plane of one side of circuit connection material glues with 70 DEG C, 0.5MPa heating in 5 seconds and pressurization
On.Afterwards, peel off PET film, by the bonding plane of the opposing party of film-shaped circuit connection material with
IC chip connects.By such as upper type, the connecting structure A of making circuit member.
(embodiment 2)
(1) making of coated particle
First, in the surface of the crosslinked polystyrene particle of mean diameter 5 μm, set with electroless plating
Put the nickel dam of thickness 0.2 μm, and by arranging the gold of thickness 0.04 μm in the outside of this nickel dam
Layer, obtains being equivalent to the coated film plastic particle (PSt-M) of conducting particles 51.By this coated film plastic grain
The some on surface of son, by be equivalent to insulating fine particles 52 polymethyl methacrylate (
PMMA) it is coated to, obtains the average particle that insulating fine particles with mean diameter 0.2 μm is coating
The coated particle B of footpath 5.2 μm.Coated particle B is that the 40% of the surface of conducting particles is coated to,
In the way of proportion after coating is the proportion 97/100 before being coated to, the quilt by insulating fine particles
Coated electroconductive particles.And, mean diameter is to obtain from based on retouching the observation sweeping type ultramicroscope
To the value that calculates of measured value.Measure similarly to Example 1 further with regards to covering rate.
(2) thermal decomposition gas chromatography measures
About coated particle B, carry out to be shown in the condition determination of table 1 thermally decomposing gas chromatography
Measure.The result of mass ratio A is calculated by the calibration trace of Fig. 5, mass ratio A is 18/1000,
Calculated the result of mass ratio B by the calibration trace of Fig. 6, mass ratio B is 58/1000 (reference table 2
)。
(3) making of circuit connection material
First, by bisphenol A type epoxy resin and 9,9 '-bis-(4-hydroxyphenyl) fluorenes, synthetic glass turns
Move the phenoxy resin that temperature is 80 DEG C.By this phenoxy resin 50g, it is dissolved in and in weight ratio is
Toluene (boiling point 110.6 DEG C, SP value 8.90)/ethyl acetate (boiling point 77.1 DEG C, SP value 9.10
The mixed solvent of)=50/50, divides the solution of 40 weight % as solid.Then, it is adjusted to solid
Shape point weight ratio is phenoxy resin 60g, dicyclopentenyl omega-diol diacrylate 39g, phosphate ester
Type acrylate 1g, the solution of tertiary hexyl peroxidating-2-ethylhexanoate 5g.
Then, coated particle B is made to coordinate dispersion 5 volume % to adjust solution in above-mentioned solution.So
After, by this solution, use apparatus for coating to coat own surface and process thickness 80 μm simultaneously
PET (polyethylene terephthalate) thin film, by 70 DEG C, the hot air drying of 10 points, in
The 1st film-like material of thickness 10 μm is obtained in PET film.
It addition, be adjusted to solid point weight ratio be phenoxy resin 60g, dicyclopentenyl glycol two
Acrylate 39g, phosphate type acrylate 1g, tertiary hexyl peroxidating-2-ethylhexanoate 5g
Other solution.By this solution, apparatus for coating is used to coat surface and process the thickness 80 of one side
PET (polyethylene terephthalate) thin film of μm, by 70 DEG C, the hot air drying of 10 points
Dry, in PET film, obtain the 2nd film like being made up of adhesive composition of thickness 10 μm
Material.
The 1st above-mentioned film-like material and the 2nd film-like material are bonded with laminating machine, obtains two
The film-shaped circuit connection material that layer is constituted.
(4) making of the connecting structure of circuit member
Use above-mentioned film-shaped circuit connection material, same as in Example 1 and make circuit member
Connecting structure B.
(embodiment 3)
(1) making of coated particle
As coated particle C, use the AUL-704GD of hydrops chemical company.Coated particle C
Nucleome 51x be made up of the plastics of polyacrylate system, the mean diameter of conducting particles 51 is 4 μ
m.Insulating fine particles 52 is made up of polymethyl methacrylate (PMMA), its mean diameter
It it is 0.2 μm.
(2) thermal decomposition gas chromatography measures
First, carry out to make the calibration trace about mass ratio A thermally decomposing gas chromatography
Measure.When measuring, as having leading of the nucleome 51y that is made up of the plastics of polyacrylate system
Charged particle 51, employs the AUL-704 (PAc-M) of hydrops chemical company.
In measurement result, as the peak value (peak of the thermal decomposition composition of AUL-704 (PAc-M)
), use peak value (peak) the area I of polyacrylate (Ac)AC.It addition, as poly-methyl
Acrylic acid methyl ester. (PMMA) thermal decomposition composition peak value, employ methyl methacrylate (
MMA) peak area IMMA.Peak area ratio (I has been calculated by theseMMA/Ist)。
It addition, quality WPAc-M of AUL-704 (PAc-M) is equivalent to the matter of conducting particles 51
Amount, quality W of polymethyl methacrylate (PMMA)PMMABe equivalent to insulating fine particles 52
Quality.Mass ratio A (W has been calculated by thesePMMA/WPAc-M).Then, about peak area
Than (IMMA/Ist) and mass ratio A (WPMMA/WPAc-M) relation, be made and be shown in Fig. 7
Calibration trace.The calibration trace of Fig. 7 has good rectilinearity.
Then, carry out to make the calibration trace about mass ratio B thermally decomposing gas chromatography
Measure.When measuring, employ the LP-704 of the hydrops chemical company into polyacrylate particle
(PAc)。
In measurement result, as the peak value of the thermal decomposition composition of LP-704 (PAc), employ poly-
Peak value (peak) the area I of acrylate (Ac)AC.It addition, as polymethyl methacrylate
(PMMA) peak value of thermal decomposition composition, employs the peak of methyl methacrylate (MMA)
Value area IMMA.Peak area ratio (I has been calculated by theseMMA/IAC)。
It addition, quality W of polymethyl methacrylate (PMMA)PMMABe equivalent to insulating properties micro-
The quality of particle 52, quality WPAc of LP-704 (PAc) is equivalent to the quality of nucleome 51x.
Mass ratio B (W has been calculated by thesePMMA/WPAc).Then, about peak area ratio (IMMA/IAC
) and mass ratio B (WPMMA/WPAc) relation, be made the calibration trace being shown in Fig. 8.
The calibration trace of Fig. 8 has good rectilinearity.
Then, about coated particle C, carry out thermally decomposing gas phase layer being shown in the condition determination of table 1
The result that analysis method measures, obtains being shown in the pyrogram of the 9th figure.Acrylate (Ac) with
Peak area ratio (the I of methyl methacrylate (MMA)MMA/IAC) it is 1: 90.Use this value
, the calibration trace of Fig. 7 calculating the result of mass ratio A, mass ratio A is 11/1000, by Fig. 8
Calibration trace calculate the result of mass ratio B, mass ratio B was 34/1000 (with reference to table 2).
(3) making of circuit connection material
In addition to replacing using coated particle C in the coated particle A of embodiment 1, with enforcement
Example 1 is identical, obtains two layers of film-shaped circuit connection material constituted.
(4) making of the connecting structure of circuit member
Use above-mentioned film-shaped circuit connection material, same as in Example 1 and make circuit member
Connecting structure C.
(comparative example 1)
(1) making of conducting particles
Use the conducting particles that surface is not coated to insulating fine particles.That is, the quilt of conducting particles
The rate of covering is 0%.
(2) thermal decomposition gas chromatography measures
The result that calculates of mass ratio A and mass ratio B is shown in table 2.
(3) making of circuit connection material
Except replacing the coated particle A in embodiment 1, and use and be not coated to insulating fine particles
Conducting particles beyond, same as in Example 1, obtain two layers constitute film-shaped circuits connect materials
Material.
(4) making of the connecting structure of circuit member
Use above-mentioned film-shaped circuit connection material, same as in Example 1 and make circuit member
Connecting structure D.
(comparative example 2)
(1) making of coated particle
First, in the surface of the crosslinked polystyrene particle (PSt) of mean diameter 5 μm, with non-
Electrolysis plating arranges the nickel dam of thickness 0.2 μm, and by arranging thickness 0.04 in the outside of this nickel dam
The layer gold of μm, obtains coated film plastic particle (PSt-M).By the surface of this coated film plastic particle
Some, is coated to by polymethyl methacrylate (PMMA), obtains with mean diameter 0.2
The coated particle E of mean diameter 5.2 μm that insulating fine particles of μm is coating.And, averagely
Particle diameter is from based on retouching the value that the measured value that the observation sweeping type ultramicroscope obtains calculates.
(2) thermal decomposition gas chromatography measures
About coated particle E, carry out to be shown in the condition determination of table 1 thermally decomposing gas chromatography
Measure.The result of mass ratio A is calculated by the calibration trace of Fig. 5, mass ratio A is 30/1000,
Calculated the result of mass ratio B by the calibration trace of Fig. 6, mass ratio B is 101/1000 (reference table
2)。
(3) making of circuit connection material
In addition to replacing using coated particle E in the coated particle A of embodiment 1, with enforcement
Example 1 is identical, obtains two layers of film-shaped circuit connection material constituted.
(4) making of the connecting structure of circuit member
Use above-mentioned film-shaped circuit connection material, same as in Example 1 and make circuit member
Connecting structure E.
(to circuit electrode between connect resistance mensuration)
About connecting structure A～E of circuit member, the connection resistance to the initial stage (after connection),
500 circulation (cycle will be kept in-40 DEG C of 30 minutes and 100 DEG C of temperature cycles grooves of 30 minutes
Connection resistance after), uses 2 terminals measurement methods to measure with avometer (multimeter).
The results are shown in table 3.Here, so-called connect resistance mean to circuit electrode between resistance
(mensuration of the adjacent insulation resistance between circuit electrode)
About connecting structure A～E of circuit member, the voltage one of direct current (DC) 50V will be applied with
Insulation resistance after minute, uses 2 terminals measurement methods to measure with avometer (multimeter)
.The results are shown in table 3.Here, so-called insulation resistance refers to the resistance between adjacent circuit electrode
(table 3)
For connecting structure A～C of the circuit member of embodiment 1～3, in the early stage, after temperature cycles
Arbitrary connection resistance is all suppressed the lowest, and insulation resistance also becomes the highest.
To this, for the connecting structure D of the circuit member of comparative example 1, compared with connecting structure A～C
, insulation resistance step-down.It addition, the connecting structure E of the circuit member of comparative example 2, in the early stage, temperature
Degree is arbitrary after circulating to be connected resistance all uprise compared with connecting structure A～C.
Above-described embodiment 1～3 and comparative example 1,2 be the 1st embodiment.By identified above,
In the case of using the circuit connection material of the 1st embodiment to manufacture the connecting structure of circuit member
, in the connecting structure of the circuit member obtained, to circuit electrode between connection resistance abundant
Reduce and can stabilisation, simultaneously can fully improve the insulating properties between adjacent circuit electrode.
(embodiment 4)
First, bisphenol A type epoxy resin and bisphenol-A (bisphenol A) synthetic glass shift
Temperature is the phenoxy resin of 80 DEG C.By this phenoxy resin 50g, being dissolved in weight ratio is first
Benzene (boiling point 110.6 DEG C, SP value 8.90)/ethyl acetate (boiling point 77.1 DEG C, SP value 9.10)=50/50
Mixed solvent, divide the solution of 40 weight % as solid.Then, it is adjusted to solid point weight
Ratio is phenoxy resin 60g, dicyclopentenyl omega-diol diacrylate 39g, phosphate type acrylic acid
Ester 1g, the solution of tertiary hexyl peroxidating-2-ethylhexanoate 5g.
On the other hand, use by the polymer structure of free-radical polymerised material (acrylate monomer)
Insulating fine particles become, coating after proportion be the proportion before being relatively coated to be 98/100 ground quilt
Cover conducting particles surface 20%, obtained coated particle.And, conducting particles is by polyphenyl
The surface of the nucleome that ethylene is constituted, has the nickel dam of thickness 0.2 μm, has in the outside of this nickel dam
The layer gold of thickness 0.04 μm.It addition, as conducting particles, employing mean diameter is 5 μm
Conducting particles.
This coated particle is made to coordinate dispersion 5 volume % to adjust solution in above-mentioned solution.Then, by this
Solution, uses apparatus for coating and to coat the PET of thickness 80 μm that own surface processes one side (poly-
Ethylene glycol terephthalate) thin film, by 70 DEG C, the hot air drying of 10 points, in PET film
On obtain the 1st film-like material of thickness 10 μm.
It addition, be adjusted to solid point weight ratio be phenoxy resin 60g, dicyclopentenyl glycol two
Acrylate 39g, phosphate type acrylate 1g, tertiary hexyl peroxidating-2-ethylhexanoate 5g
Other solution.By this solution, apparatus for coating is used to coat surface and process the thickness 80 of one side
PET (polyethylene terephthalate) thin film of μm, by 70 DEG C, the hot air drying of 10 points
Dry, in PET film, obtain the 2nd film like being made up of adhesive composition of thickness 10 μm
Material.
The 1st above-mentioned film-like material and the 2nd film-like material are bonded with laminating machine, obtains two
The film-shaped circuit connection material that layer is constituted.
(embodiment 5)
First, by bisphenol A type epoxy resin and 9,9 '-bis-(4-hydroxyphenyl) fluorenes, synthetic glass
Transition temperature is the phenoxy resin of 80 DEG C.By this phenoxy resin 50g, it is dissolved in weight ratio
For toluene (boiling point 110.6 DEG C, SP value 8.90)/ethyl acetate (boiling point 77.1 DEG C, SP value 9.10
The mixed solvent of)=50/50, divides the solution of 40 weight % as solid.Then, it is adjusted to solid
Shape point weight ratio is phenoxy resin 60g, dicyclopentenyl omega-diol diacrylate 39g, phosphate ester
Type acrylate 1g, the solution of tertiary hexyl peroxidating-2-ethylhexanoate 5g.
On the other hand, use by the polymer structure of free-radical polymerised material (acrylate monomer)
Insulating fine particles become, coating after proportion relatively coating before proportion be that 97/100 ground is coated to and leads
The 40% of the surface of charged particle, has obtained coated particle.And, conducting particles is by polystyrene
The surface of the nucleome constituted, has the nickel dam of thickness 0.2 μm, has thickness in the outside of this nickel dam
The layer gold of 0.04 μm.It addition, as conducting particles, employ the conduction that mean diameter is 5 μm
Particle.
This coated particle is made to coordinate dispersion 5 volume % to adjust solution in above-mentioned solution.Then, by this
Solution, uses apparatus for coating and to coat the PET of thickness 80 μm that surface processes one side (poly-
Ethylene glycol terephthalate) thin film, by 70 DEG C, the hot air drying of 10 points, in PET film
On obtain the 1st film-like material of thickness 10 μm.
It addition, be adjusted to solid point weight ratio be phenoxy resin 60g, dicyclopentenyl glycol two
Acrylate 39g, phosphate type acrylate 1g, tertiary hexyl peroxidating-2-ethylhexanoate 5g
Other solution.By this solution, apparatus for coating is used to coat surface and process the thickness 80 of one side
PET (polyethylene terephthalate) thin film of μm, by 70 DEG C, the hot air drying of 10 points
Dry, in PET film, obtain the 2nd film like being made up of adhesive composition of thickness 10 μm
Material.
The 1st above-mentioned film-like material and the 2nd film-like material are bonded with laminating machine, obtains two
The film-shaped circuit connection material that layer is constituted.
(comparative example 3)
Except replacing in the coated particle of embodiment 4, employ not coating with insulating fine particles
Beyond conducting particles, the same as in Example 4 and obtain two layers constitute film-shaped circuit connection materials
.That is, the covering rate of conducting particles is 0%.
(comparative example 4)
Except replacing in the coated particle of embodiment 4, employ beyond following coated particle, with
Embodiment 4 is identical and obtains two layers of film-shaped circuit connection material constituted.
Use the insulating properties being made up of the polymer of free-radical polymerised material (acrylate monomer)
Micropartical, the table that proportion is 95/100 ground coated electroconductive particles before the proportion after being coated to is relatively coating
The 70% of face, has obtained coated particle.And, conducting particles is at the nucleome being made up of polystyrene
Surface, there is the nickel dam of thickness 0.2 μm, there is in the outside of this nickel dam thickness 0.04 μm
Layer gold.It addition, as conducting particles, employ the conducting particles that mean diameter is 5 μm.
(making of the connecting structure of circuit member)
First, as the first circuit member, prepare to be configured with projection area 50 μ m 50 μm,
Away from 100 μm, the IC chip of the golden projection of highly 20 μm.Then, as second circuit component
, be ready on the glass substrate of thickness 1.1mm be deposited with indium tin oxide (ITO) circuit and shape
The ito substrate (sheet resistance ＜ 20 Ω/) become.
Then, the film-shaped circuit connection material clamping making embodiment 4,5 and comparative example 3,4 is deposited
It is between IC chip and ito substrate, by IC chip, film-shaped circuit connection material and ITO
Substrate is seized on both sides by the arms with quartz glass and polishing head, with 200 DEG C, 100MPa, heating in 10 seconds and pressurization
.So effect, connects IC chip and ito substrate via film-shaped circuit connection material.Now,
On ito substrate in advance by the bonding plane of a side of film-shaped circuit connection material with 70 DEG C,
0.5MPa, 5 seconds heating and pressurization and be stained with.Afterwards, peel off PET film, by film like electricity
The bonding plane of the opposing party of road connecting material is connected with IC chip.
By such as upper type, make connecting structure F～I of circuit member.And, circuit member
Connecting structure F～I uses embodiment 4,5 and the film-shaped circuit connection material of comparative example 3,4 respectively
And make.
(mensuration of proportion)
About embodiment 4,5 and each film-shaped circuit connection material of comparative example 3,4, will be by
Conducting particles before covering and coating after coated particle, separately sampled 3.5cc, at room temperature, helium gas
Atmosphere measures proportion with gravimeter (company of Shimadzu Seisakusho Ltd. system, Accupyc 1330-01), asks
Go out the ratio (proportion ratio) of the proportion of the conducting particles before the coated particle after being coated to is coated to relatively.Will knot
Fruit is shown in table 4.
(to circuit electrode between connect resistance mensuration)
About connecting structure F～I of circuit member, the connection resistance to the initial stage (after connection), incite somebody to action
After keeping 500 circulations (cycle) in-40 DEG C of 30 minutes and 100 DEG C of temperature cycles grooves of 30 minutes
Connection resistance, use 2 terminals measurement methods and measure with avometer (multimeter).Will knot
Fruit is shown in table 5.Here, so-called connect resistance refer to to circuit electrode between resistance.
(mensuration of the adjacent insulation resistance between circuit electrode)
About connecting structure F～I of circuit member, the voltage one of direct current (DC) 50V will be applied with
Insulation resistance after minute, uses 2 terminals measurement methods to measure with avometer (multimeter)
.The results are shown in table 5.Here, so-called insulation resistance refers to the resistance between adjacent circuit electrode
(table 4)
| Embodiment 4 | Embodiment 5 | Comparative example 3 | Comparative example 4 | |
| Proportion ratio before and after Bei Fu | 98/100 | 97/100 | - | 95/100 |
| Covering rate (%) | 20 | 40 | 0 | 70 |
(table 5)
The company of the circuit member that the film-shaped circuit connection material of use embodiment 4,5 is obtained
Meet structure F, G, in any one in the early stage, after temperature cycles, connect resistance and be all suppressed ten
Dividing low, insulation resistance also becomes the highest.
To this, the circuit member obtained at the film-shaped circuit connection material of use comparative example 3
Connecting structure H, the insulation resistance step-down compared with connecting structure F, G.It addition, use comparative example 4
Film-shaped circuit connection material and the connecting structure I of circuit member that obtains, in the early stage, temperature follows
In any one after ring, connect resistance compared with connecting structure F, G and all uprise.
Above-described embodiment 4,5 and comparative example 3,4 are the 2nd embodiments.By can confirm that above
, manufacture the feelings of the connecting structure of circuit member at the circuit connection material using the 2nd embodiment
Under condition, in the connecting structure of the circuit member obtained, to circuit electrode between connection resistance
Fully reduce and can fully improve the insulating properties between adjacent circuit electrode.
Claims (23)
1. a film-shaped circuit connection material, is for making shape on the interarea of the first circuit substrate
Become have multiple first circuit electrode the first circuit member,
With the second circuit structure being formed with multiple second circuit electrode on the interarea of second circuit substrate
Part,
With described first circuit electrode and second circuit electrode to the film like that is attached of state
Circuit connection material,
Described film-shaped circuit connection material contains the part table of adhesive composition and conducting particles
The coated particle that face is coated to by insulating fine particles,
Described film-shaped circuit connection material is two layers of composition,
Described film-shaped circuit connection material contains thin film formation material,
The proportion of described coated particle is the 97/100～99/100 of the proportion of described conducting particles,
Described adhesive composition contain free-radical polymerised material and produced by heating free from
By the firming agent of base.
2. a film-shaped circuit connection material, is for making shape on the interarea of the first circuit substrate
Become have multiple first circuit electrode the first circuit member,
With the second circuit structure being formed with multiple second circuit electrode on the interarea of second circuit substrate
Part,
With described first circuit electrode and second circuit electrode to the film like that is attached of state
Circuit connection material,
Described film-shaped circuit connection material contains the part table of adhesive composition and conducting particles
The coated particle that face is coated to by insulating fine particles,
Described film-shaped circuit connection material is two layers of composition,
Described film-shaped circuit connection material contains thin film formation material,
The quality of described insulating fine particles is the 2/1000～26/1000 of the quality of described conducting particles
,
Described adhesive composition contain free-radical polymerised material and produced by heating free from
By the firming agent of base.
3. a film-shaped circuit connection material, is for making shape on the interarea of the first circuit substrate
Become have multiple first circuit electrode the first circuit member,
With the second circuit structure being formed with multiple second circuit electrode on the interarea of second circuit substrate
Part,
With described first circuit electrode and second circuit electrode to the film like that is attached of state
Circuit connection material,
Described film-shaped circuit connection material contains the part table of adhesive composition and conducting particles
The coated particle that face is coated to by insulating fine particles,
Described film-shaped circuit connection material is two layers of composition,
Described film-shaped circuit connection material contains thin film formation material,
Described conducting particles has the nucleome being made up of macromolecular compound,
The quality of described insulating fine particles is the 7/1000～86/1000 of described nucleome quality,
Described adhesive composition contain free-radical polymerised material and produced by heating free from
By the firming agent of base.
4. film-shaped circuit connection material as claimed any one in claims 1 to 3, wherein,
The mean diameter of described insulating fine particles is the 1/40～1/10 of the mean diameter of described conducting particles.
5. film-shaped circuit connection material as claimed any one in claims 1 to 3, wherein,
Described insulating fine particles is to be made up of the polymer of free-radical polymerised material.
6. film-shaped circuit connection material as claimed any one in claims 1 to 3, wherein,
Described thin film formation material is phenoxy resin.
7. film-shaped circuit connection material as claimed in claim 6, wherein, described phenoxy group tree
Fat contains the molecular configuration being derived from polycyclc aromatic compound in intramolecular.
8. film-shaped circuit connection material as claimed in claim 7, wherein, described multi-ring fragrance
Compounds of group is fluorenes.
9. a connecting structure for circuit member, possesses and is formed on the interarea of the first circuit substrate
There is the first circuit member of multiple first circuit electrode,
The interarea of second circuit substrate is formed the second circuit component of multiple second circuit electrode
, and
It is arranged at the described interarea of described first circuit substrate and the described master of described second circuit substrate
Between face and when described first circuit electrode and second circuit electrode be in mutually to connect
Connect described first circuit member and the mutual circuit connecting elements of second circuit component,
Wherein, described circuit connecting elements is by the film like according to any one of claim 1 to 8
The solidfied material of circuit connection material is constituted,
Described first circuit electrode electrically connects via described coated particle with described second circuit electrode
。
10. a manufacture method for the connecting structure of circuit member, wherein, possesses:
The interarea of the first circuit substrate is formed the first circuit member of multiple first circuit electrode
Be formed on the interarea of second circuit substrate multiple second circuit electrode second circuit component it
Between, when described first circuit electrode and described second circuit electrode to, right is set
The operation of requirement film-shaped circuit connection material according to any one of 1 to 8；And
By heating and the operation making described film-shaped circuit connection material solidify of pressurizeing.
The connecting structure of 11. circuit members as claimed in claim 9, wherein, in adjacent institute
When stating the DC voltage applying 50V between circuit electrode, the adjacent resistance value between described circuit electrode
It is 109More than Ω.
The connecting structure of 12. circuit members as described in claim 9 or 11, wherein, described
In one circuit member and second circuit component, at least one is IC chip.
The connecting structure of 13. circuit members as described in claim 9 or 11, wherein, described
Connection resistance between one circuit electrode and described second circuit electrode is 1 below Ω.
The connecting structure of 14. circuit members as described in claim 9 or 11, wherein, described
At least one in one circuit electrode and second circuit electrode, has by selected from gold, silver, stannum, platinum family
Metal and indium tin oxide at least one constitute electrode surface layer.
The connecting structure of 15. circuit members as described in claim 9 or 11, wherein, described
At least one in one circuit member and second circuit component, has by selected from silicon nitride, silica chemical combination
The substrate surface layer that at least one in thing and polyimide resin is constituted.
The use of 16. 1 kinds of film-shaped circuit connection materials, described film-shaped circuit connection material is used
In making to be formed with the first circuit member of multiple first circuit electrode on the interarea of the first circuit substrate
, and on the interarea of second circuit substrate, be formed with the second circuit component of multiple second circuit electrode
, with described first circuit electrode and second circuit electrode to state be attached,
Described film-shaped circuit connection material contains the part table of adhesive composition and conducting particles
The coated particle that face is coated to by insulating fine particles,
Described film-shaped circuit connection material is two layers of composition,
Described film-shaped circuit connection material contains thin film formation material,
The proportion of described coated particle is the 97/100～99/100 of the proportion of described conducting particles,
Described adhesive composition contain free-radical polymerised material and produced by heating free from
By the firming agent of base.
The use of 17. 1 kinds of film-shaped circuit connection materials, described film-shaped circuit connection material is used
In making to be formed with the first circuit member of multiple first circuit electrode on the interarea of the first circuit substrate
, and on the interarea of second circuit substrate, be formed with the second circuit component of multiple second circuit electrode
, with described first circuit electrode and second circuit electrode to state be attached,
Described film-shaped circuit connection material contains the part table of adhesive composition and conducting particles
The coated particle that face is coated to by insulating fine particles,
Described film-shaped circuit connection material is two layers of composition,
Described film-shaped circuit connection material contains thin film formation material,
The quality of described insulating fine particles is the 2/1000～26/1000 of the quality of described conducting particles
,
Described adhesive composition contain free-radical polymerised material and produced by heating free from
By the firming agent of base.
The use of 18. 1 kinds of film-shaped circuit connection materials, described film-shaped circuit connection material is used for
Make to be formed on the interarea of the first circuit substrate multiple first circuit electrode the first circuit member,
With on the interarea of second circuit substrate, be formed with the second circuit component of multiple second circuit electrode,
With described first circuit electrode and second circuit electrode to state be attached,
Described film-shaped circuit connection material contains the part table of adhesive composition and conducting particles
The coated particle that face is coated to by insulating fine particles,
Described film-shaped circuit connection material is two layers of composition,
Described film-shaped circuit connection material contains thin film formation material,
Described conducting particles has the nucleome being made up of macromolecular compound,
The quality of described insulating fine particles is the 7/1000～86/1000 of described nucleome quality,
Described adhesive composition contain free-radical polymerised material and produced by heating free from
By the firming agent of base.
Making of 19. film-shaped circuit connection materials as according to any one of claim 16 to 18
With, wherein, the mean diameter of described insulating fine particles is the mean diameter of described conducting particles
1/40～1/10.
The use of 20. film-shaped circuit connection materials as according to any one of claim 16 to 18
, wherein, described insulating fine particles is to be made up of the polymer of free-radical polymerised material.
The use of 21. film-shaped circuit connection materials as according to any one of claim 16 to 18
, wherein, described thin film formation material is phenoxy resin.
The use of 22. film-shaped circuit connection materials as claimed in claim 21, wherein, described
Phenoxy resin contains the molecular configuration being derived from polycyclc aromatic compound in intramolecular.
The use of 23. film-shaped circuit connection materials as claimed in claim 22, wherein, described
Polycyclc aromatic compound is fluorenes.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004-002308 | 2004-01-07 | ||
| JP2004002305A JP4380327B2 (en) | 2004-01-07 | 2004-01-07 | Circuit connection material, film-like circuit connection material using the same, circuit member connection structure, and manufacturing method thereof |
| JP2004002308A JP4380328B2 (en) | 2004-01-07 | 2004-01-07 | Circuit connection material, film-like circuit connection material using the same, circuit member connection structure, and manufacturing method thereof |
| JP2004-002305 | 2004-01-07 | ||
| CNA200580001944XA CN1906265A (en) | 2004-01-07 | 2005-01-06 | Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200580001944XA Division CN1906265A (en) | 2004-01-07 | 2005-01-06 | Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101944659A CN101944659A (en) | 2011-01-12 |
| CN101944659B true CN101944659B (en) | 2016-08-17 |
Family
ID=34752086
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010245654.2A Active CN101944659B (en) | 2004-01-07 | 2005-01-06 | Circuit connection material, use its film-shaped circuit connection material, the connecting structure of circuit member and manufacture method thereof |
| CN2013103506129A Pending CN103409082A (en) | 2004-01-07 | 2005-01-06 | Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013103506129A Pending CN103409082A (en) | 2004-01-07 | 2005-01-06 | Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20100025089A1 (en) |
| EP (1) | EP1702968A4 (en) |
| KR (4) | KR100981483B1 (en) |
| CN (2) | CN101944659B (en) |
| SG (1) | SG158842A1 (en) |
| TW (4) | TW200525005A (en) |
| WO (1) | WO2005066298A1 (en) |
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| JP4967482B2 (en) * | 2006-02-27 | 2012-07-04 | 日立化成工業株式会社 | Conductive particles, adhesive composition and circuit connecting material |
| CN102153957B (en) * | 2006-11-10 | 2013-12-04 | 日立化成株式会社 | Adhesive film, and connection structure and connecting method for circuit member |
| EP2178094A4 (en) * | 2007-08-02 | 2013-02-20 | Hitachi Chemical Co Ltd | Circuit connection material, and connection structure of circuit member and connection method of circuit member using the circuit connection material |
| CN101835859B (en) * | 2007-10-29 | 2015-04-08 | 日立化成株式会社 | Circuit connecting material, connection structure and method for producing the same |
| JP5430093B2 (en) * | 2008-07-24 | 2014-02-26 | デクセリアルズ株式会社 | Conductive particles, anisotropic conductive film, joined body, and connection method |
| JP5435040B2 (en) * | 2010-04-01 | 2014-03-05 | 株式会社村田製作所 | Electronic component and manufacturing method thereof |
| JP5530571B1 (en) * | 2012-11-28 | 2014-06-25 | 積水化学工業株式会社 | Conductive particles with insulating particles, conductive material, and connection structure |
| GB2518363A (en) * | 2013-09-18 | 2015-03-25 | Novalia Ltd | Circuit board assembly |
| DE102013219688B3 (en) * | 2013-09-30 | 2015-02-05 | Robert Bosch Gmbh | Thermally conductive connection means, connection arrangement and method for producing a heat-conducting connection |
| CN105295812B (en) * | 2014-07-22 | 2021-03-02 | 昭和电工材料株式会社 | Connecting material and solar cell module |
| WO2018139552A1 (en) * | 2017-01-27 | 2018-08-02 | 日立化成株式会社 | Insulation covered conductive particles, anisotropic conductive film, method for producing anisotropic conductive film, connection structure and method for producing connection structure |
| US10733136B1 (en) * | 2019-03-01 | 2020-08-04 | Western Digital Technologies, Inc. | Vertical surface mount type C USB connector |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20100025089A1 (en) | 2010-02-04 |
| CN103409082A (en) | 2013-11-27 |
| SG158842A1 (en) | 2010-02-26 |
| TW200525005A (en) | 2005-08-01 |
| WO2005066298A1 (en) | 2005-07-21 |
| TW200942596A (en) | 2009-10-16 |
| TWI320575B (en) | 2010-02-11 |
| TW200945373A (en) | 2009-11-01 |
| EP1702968A4 (en) | 2010-08-25 |
| TW200951201A (en) | 2009-12-16 |
| TWI323276B (en) | 2010-04-11 |
| CN101944659A (en) | 2011-01-12 |
| KR20090074778A (en) | 2009-07-07 |
| KR100908370B1 (en) | 2009-07-20 |
| KR20090064461A (en) | 2009-06-18 |
| KR20070012337A (en) | 2007-01-25 |
| EP1702968A1 (en) | 2006-09-20 |
| KR20080065314A (en) | 2008-07-11 |
| KR100996035B1 (en) | 2010-11-22 |
| TWI320427B (en) | 2010-02-11 |
| KR100981483B1 (en) | 2010-09-10 |
| KR100865204B1 (en) | 2008-10-23 |
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