CN101944484A - Method for improving side opening of emitter window - Google Patents
Method for improving side opening of emitter window Download PDFInfo
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- CN101944484A CN101944484A CN2009100575826A CN200910057582A CN101944484A CN 101944484 A CN101944484 A CN 101944484A CN 2009100575826 A CN2009100575826 A CN 2009100575826A CN 200910057582 A CN200910057582 A CN 200910057582A CN 101944484 A CN101944484 A CN 101944484A
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- oxide film
- emitter
- lateral openings
- nitride film
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Abstract
The invention discloses a method for improving a side opening of an emitter window. The method comprises the following steps of: 1, sequentially forming a bottom oxide film, amorphous polysilicon, a top oxide film and photoresist on a silicon substrate; 2, exposuring and developing the photoresist to form a pattern; 3, performing dry etching to open the top oxide film and an amorphous polysilicon window and stopping on the bottom oxide film; 4, stripping the photoresist; 5, comprehensively growing a layer of nitride film; 6, re-etching the nitride film to form a nitride film side wall; 7, performing wet etching to open the bottom oxide film; and 8, removing the nitride film side wall by the wet method to form the emitter window. By the method, photoresist etching by the wet method can be avoided and the hazard that the photoresist is stripped in a wet-method liquid medicament is avoided, so that an oxide film etching liquid medicament with more precisely controlled using speed can be selected and the uniformity of the side opening is improved.
Description
Technical field
The present invention relates to a kind of method of manufacturing technology of semiconductor integrated circuit, be specifically related to a kind of method of in the manufacturing process of two-stage transistor, improving the emitter-window lateral openings.
Background technology
In the manufacturing process of Bi-Polar transistor (two-stage transistor), EmitterWindow Oxide Open (opening the oxide-film of emitter-window) is the wet etching that adopts the band photoresist at present, the general BOE (buffer oxide film etching agent) that adopts carries out, unavoidable problem is like this: must form undercut (lateral openings) under the emitter 1., enlarged actual emitter window open area, influence the size of current amplification factor and characteristic frequency, lateral openings too greatly often also has some reliability problems and exists; 2. there is the risk of photoresist lift off in the lithographic method of wet method band glue.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of improving the emitter-window lateral openings, this method can avoid using the band photoresist etching of wet method, the risk of avoiding photoresist in wet liquid medicine, to peel off, can select to use the oxide-film etching soup of the more accurate control of speed like this, improve the uniformity of lateral openings.
For solving the problems of the technologies described above, the invention provides a kind of method of improving the emitter-window lateral openings, comprise the steps:
Step 7, wet etching is opened bottom oxide film;
Step 8, wet method is removed the nitride film side wall, forms emitter-window.
Silicon substrate described in the step 1 is ordinary silicon substrate or germanium silicon silicon substrate; Described bottom oxide film and top oxide-film form in the gaseous phase deposition mode; The thickness of described top oxide-film is more than the twice of bottom oxide film.
The mode that the mode of peeling off of photoresist described in the step 4 adopts traditional ashing treatment and dioxysulfate water to add the ammoniacal liquor hydrogen peroxide is carried out.
The thickness of the nitride film described in the step 5 suitably increases according to the thickness of described bottom oxide film, and the thickness of described nitride film is the 120%-150% of described bottom oxide film thickness.
The thickness of the side wall of nitride film described in the step 6 is thicker slightly than bottom oxide film, and the thickness of described nitride film side wall is the 120%-150% of bottom oxide film thickness.
Adopt wet etching to open bottom oxide film in the step 7, need accurately control lateral openings, avoid under unformed polysilicon, forming opening.
Wet etching described in the step 7 uses buffer oxide film etching agent or dilute hydrofluoric acid, the oxide-film etch rate of this oxide-film etching agent or dilute hydrofluoric acid less than 20 dusts/minute.
Step 8 adopts wet method to remove the nitride film side wall, forms no lateral openings or the less emitter-window of lateral openings, and the wet method of described nitride film side wall is removed and adopted hot phosphoric acid.
Compare with prior art, the present invention has following beneficial effect: the present invention is by before opening the oxide-film of emitter-window, the margin (tolerance) of lateral openings when the foundation of increase nitride film side wall increases wet etching, reach the purpose of improving lateral openings, simultaneously can avoid using the band photoresist etching of wet method, the risk of avoiding photoresist in wet liquid medicine, to peel off, can select to use the oxide-film etching soup of the more accurate control of speed like this, improve the uniformity of lateral openings.
Description of drawings
Fig. 1 is the schematic diagram after step 1 of the present invention is finished;
Fig. 2 is the schematic diagram after step 2 of the present invention is finished;
Fig. 3 is the schematic diagram after step 3 of the present invention is finished;
Fig. 4 is the schematic diagram after step 4 of the present invention is finished;
Fig. 5 is the schematic diagram after step 5 of the present invention is finished;
Fig. 6 is the schematic diagram after step 6 of the present invention is finished;
Fig. 7 is the schematic diagram after step 7 of the present invention is finished;
Fig. 8 is the schematic diagram after step 8 of the present invention is finished.
Wherein, the 1st, photoresist, the 2nd, top oxide-film, the 3rd, unformed polysilicon, the 4th, bottom oxide film, the 5th, silicon substrate, the 6th, nitride film.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
A kind of method of improving the emitter-window lateral openings of the present invention comprises following idiographic flow:
1. as shown in Figure 1, on silicon substrate 5, form bottom oxide film 4 successively, unformed polysilicon 3, top oxide-film 2 and photoresist 1; Silicon substrate 5 can be ordinary silicon substrate or germanium silicon silicon substrate; Bottom oxide film 4 and top oxide-film 2 can form in the gaseous phase deposition mode; The thickness of top oxide-film 2 is more than the twice of bottom oxide film 4.
2. as shown in Figure 2, photoresist 1 is exposed and develop and form figure.
3. as shown in Figure 3, open top oxide-film 2 and unformed polysilicon 3 windows, be parked on the bottom oxide film 4 with dry etching.
4. as shown in Figure 4, do photoresist 1 lift-off processing; The mode of peeling off of photoresist 1 can adopt traditional Ashing (ashing) to handle, and the mode that dioxysulfate water adds the ammoniacal liquor hydrogen peroxide is carried out.
5. one deck nitride film 6 of comprehensively growing up as shown in Figure 5; The thickness of nitride film 6 can suitably increase according to the thickness of bottom oxide film 4, defines such as 20%-50%, and promptly the thickness of nitride film 6 is the 120%-150% of bottom oxide film 4 thickness.
6. as shown in Figure 6, nitride film returns to carve and forms nitride film side wall 6; The thickness of nitride film side wall 6 is thicker slightly than bottom oxide film 4, defines such as 20%-50%, and promptly the thickness of nitride film side wall 6 is the 120%-150% of bottom oxide film 4 thickness.
7. as shown in Figure 7, wet etching is opened bottom oxide film 4, accurately controls lateral openings, avoids forming opening 3 times at unformed polysilicon; This step is carried out 4 wet etching of bottom oxide film, wet etching can use BOE (buffer oxide film etching agent) or DHF (dilute hydrofluoric acid), owing to there is not the risk of photoresist lift off herein, can use the slow soup of oxide-film etch rate, such as the oxide-film etch rate less than 20 dusts/minute BOE or dilute hydrofluoric acid, reach the degree and the inhomogeneity purpose of more accurate control lateral openings; Because the wet etching that this step adopts is isotropic etching, use the slower soup of speed, can obtain better etching homogeneity, just can control lateral openings more accurately, as long as control is more a little bit smaller a little than the actual (real) thickness of nitride film 6 to the amount of the over etching of bottom oxide film 4, like this lateral openings with regard to can not be formed on unformed polysilicon 3 below.
8. as shown in Figure 8, wet method is removed nitride film side wall 6, forms no lateral openings or the smaller emitter-window of lateral openings.The removal of nitride film side wall 6 can be used hot phosphoric acid in this step.
Claims (8)
1. a method of improving the emitter-window lateral openings is characterized in that, comprises the steps:
Step 1 forms bottom oxide film successively on silicon substrate, unformed polysilicon, top oxide-film and photoresist;
Step 2, photoresist exposed and develop forms figure;
Step 3 is opened top oxide-film and unformed polysilicon window with dry etching, is parked on the bottom oxide film;
Step 4 is done photoresist lift off and is handled;
Step 5, one deck nitride film of comprehensively growing up;
Step 6, nitride film are returned to carve and are formed the nitride film side wall;
Step 7, wet etching is opened bottom oxide film;
Step 8, wet method is removed the nitride film side wall, forms emitter-window.
2. the method for improving the emitter-window lateral openings as claimed in claim 1 is characterized in that, silicon substrate described in the step 1 is ordinary silicon substrate or germanium silicon silicon substrate; Described bottom oxide film and top oxide-film form in the gaseous phase deposition mode; The thickness of described top oxide-film is more than the twice of bottom oxide film.
3. the method for improving the emitter-window lateral openings as claimed in claim 1 is characterized in that, the mode that the mode of peeling off of photoresist described in the step 4 adopts traditional ashing treatment and dioxysulfate water to add the ammoniacal liquor hydrogen peroxide is carried out.
4. the method for improving the emitter-window lateral openings as claimed in claim 1, it is characterized in that, the thickness of the nitride film described in the step 5 suitably increases according to the thickness of described bottom oxide film, and the thickness of described nitride film is the 120%-150% of described bottom oxide film thickness.
5. the method for improving the emitter-window lateral openings as claimed in claim 1 is characterized in that, the thickness of the side wall of nitride film described in the step 6 is thicker slightly than bottom oxide film, and the thickness of described nitride film side wall is the 120%-150% of bottom oxide film thickness.
6. the method for improving the emitter-window lateral openings as claimed in claim 1 is characterized in that, adopts wet etching to open bottom oxide film in the step 7, needs accurately control lateral openings, avoids forming opening under unformed polysilicon.
7. as claim 1 or the 6 described methods of improving the emitter-window lateral openings, it is characterized in that, wet etching described in the step 7 uses buffer oxide film etching agent or dilute hydrofluoric acid, the oxide-film etch rate of this oxide-film etching agent or dilute hydrofluoric acid less than 20 dusts/minute.
8. the method for improving the emitter-window lateral openings as claimed in claim 1, it is characterized in that, step 8 adopts wet method to remove the nitride film side wall, forms no lateral openings or the less emitter-window of lateral openings, and the wet method of described nitride film side wall is removed and adopted hot phosphoric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057582A CN101944484B (en) | 2009-07-09 | 2009-07-09 | Method for improving side opening of emitter window |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910057582A CN101944484B (en) | 2009-07-09 | 2009-07-09 | Method for improving side opening of emitter window |
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| CN101944484A true CN101944484A (en) | 2011-01-12 |
| CN101944484B CN101944484B (en) | 2012-10-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102915975A (en) * | 2011-08-05 | 2013-02-06 | 无锡华润上华半导体有限公司 | Method for manufacturing BJT (bipolar junction transistor) and BiCMOS (bipolar complementary metal oxide semiconductor) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118382A (en) * | 1990-08-10 | 1992-06-02 | Ibm Corporation | Elimination of etch stop undercut |
| US6767842B2 (en) * | 2002-07-09 | 2004-07-27 | Lsi Logic Corporation | Implementation of Si-Ge HBT with CMOS process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102915975A (en) * | 2011-08-05 | 2013-02-06 | 无锡华润上华半导体有限公司 | Method for manufacturing BJT (bipolar junction transistor) and BiCMOS (bipolar complementary metal oxide semiconductor) |
| WO2013020471A1 (en) * | 2011-08-05 | 2013-02-14 | 无锡华润上华半导体有限公司 | Bipolar junction transistor and method for manufacturing bipolar and complementary metal-oxide-semiconductor hybrid structure |
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| CN101944484B (en) | 2012-10-03 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |