CN101938265A - Current control ring oscillator and control method thereof - Google Patents
Current control ring oscillator and control method thereof Download PDFInfo
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- CN101938265A CN101938265A CN2009101523439A CN200910152343A CN101938265A CN 101938265 A CN101938265 A CN 101938265A CN 2009101523439 A CN2009101523439 A CN 2009101523439A CN 200910152343 A CN200910152343 A CN 200910152343A CN 101938265 A CN101938265 A CN 101938265A
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Abstract
The invention relates to a current control ring oscillator and a control method thereof. The current control ring oscillator comprises a charge pump, a ring filter, a voltage and current converting unit and an oscillating unit, wherein the charge pump is used for providing a charge/discharge current; the ring filter is coupled to the charge pump and used for providing a control voltage; the voltage and current converting unit is coupled to the charge pump and used for converting the control voltage into a control current; and the oscillating unit comprises a plurality of current delay units which are mutually and serially connected to form a ring, and is coupled to the voltage and current converting unit, and controlled by the control current to generate an oscillating signal.
Description
Technical field
The present invention relates to a kind of oscillator, particularly a kind of Current Control annular oscillator and control method thereof.
Background technology
Oscillator is very extensive in integrated circuit is used, the major part of many electronic systems is synthetic to the carrier wave the cellular phone from the clock of microprocessor (CPU) especially, and phase-locked loop (PhaseLocked Loop, PLL) in, the part that oscillator is indispensable especially.
Oscillator mainly contains two big classes, and a class is capacitor and inductor formula oscillator (LC Oscillator), is called for short the LC oscillator, and another kind of is ring oscillator (Ring Oscillator).
The LC oscillator is based on the LC loop that capacitor and inductor are formed, and the mutual conversion by electric field and magnetic field produces vibration, keeps vibration by the positive feedback amplifying circuit again.The LC oscillator can reach very high frequency of oscillation and lower phase noise; But owing to adopt passive device, make that the area that is made in integrated circuit is big, cause its cost of manufacture height.
Ring oscillator then is made up of some stage gain level circuit in the loop, the utilization gain stage circuit delay and produce phase change.Through multi-level pmultistage circuit series connection, will form phase change increases gradually, arrive and the initial phase phase difference of pi when phase-accumulated, and loop gain is just finished the action of vibration greater than 0dB the time.It is little that ring oscillator has an area, advantages such as wide frequency range.General ring oscillator is made up of multistage identical delay cell, such as, single-ended ring oscillator commonly used is three grades, Pyatyi; The differential type ring oscillator then can be three, four, Pyatyi or the like.For level Four difference ring oscillator, each grade can produce the phase shift of π/4, only needs enough overall gains, just can produce vibration.Such ring oscillator can also produce eight mutually non-overlapping clocks, and adjacent two phase clock phase differences are π/4.
Please refer to Fig. 1, it is known level Four difference ring oscillator 100, and adopts the output frequency of voltage-controlled oscillator.Phase-frequency detector (Phase Frequency Detector, PFD, do not mark) output signals UP of circuit, the phase difference of DN, controlled charge pump (Charge Pump, CP, it is made up of current source 111,114 and 112,113 of diverter switches) 110 couples of loop filter (LoopFilter, LF, it is made up of with capacitor C 1, C2 resistance R 1) 120 electric capacity discharge and recharge last controlled voltage signal V
CV
CThrough voltage conversion circuit (V
C'=k*V
C, k can be a constant, also can be variable, unit is 1) and 130 can obtain required control voltage V
C'.V
C' voltage signal connects the voltage controling end VCO of the differential electrical pressure type delay cell 141,142,143,144 that comprises level Four, thereby controls the output frequency of annular oscillating unit 140.
Fig. 2 is then adopted voltage-type delay cell 141 (Voltage Mode Delay Cell) by Fig. 1, the formula that the latchs circuit that it is made up of six transistors (MN1, MN2, MR1, MR2, MP1 wherein, MP2 is PMOS, the rest is NMOS for MP1, MP2).Its operating principle is extensively known for those skilled in the art, does not repeat them here.
Fig. 3 then is another kind of level Four difference ring oscillator 200, and it has used feedforward (Feed Forward) framework, and voltage-type delay cell 241,242,243 wherein and 244 is made based on latching (Latch) technology and precharge (Pre-charge) technology.Please refer to Fig. 4, it is the formula that the latchs circuit of the voltage-type delay cell 241 of Fig. 3, and the difference output (OUTN/OUTP is respectively first output and second output) of N step voltage formula delay cell meets the difference input INP/INN of N+1 step voltage formula delay cell, the difference that connects N+2 step voltage formula delay cell is simultaneously imported PREP/PREN (wherein, N=1,2,3,4, when N=3, N+2=5, the N+2 level is exactly the N+2-4 level; Equally, when N=4, N+1=5, N+2=6, the N+1 level is exactly the N+1-4 level, the N+2 level is exactly the N+2-4 level).Wherein one-level (M level) the output OUTP/OUTN of annular oscillating unit 240 must antiphase be connected to M+1 level input INP/INN, and the input PREP/PREN of M+2 level, to guarantee that ring oscillator can operate as normal.The VSS signal of level Four voltage-type delay cell connects jointly, and its input VCO signal connects, and connects control voltage Vc, can obtain the frequency of wanting.
Yet the ring oscillator of aforementioned known techniques still has the problem of phase noise (Phase Noise) and phase jitter (Phase Jitter).This kind problem still needs suitably to be handled, and makes the quality of oscillator more stable.
Summary of the invention
In view of the problem of above known technology, the invention provides a kind of Current Control annular oscillator, comprise: an electric current and voltage converting unit is a Control current in order to change a control voltage; And an oscillating unit, comprise a plurality of current type delay cells, be connected in series mutually and circularize, being coupled to this voltage changes current unit, is controlled a frequency of oscillation of its oscillator signal that produces by this Control current.
The present invention also provides a kind of control method of Current Control annular oscillator, comprises the following step: a control voltage is provided; Changing this control voltage is a Control current; A ring oscillator of being formed with a plurality of current type delay cells is provided; And control a frequency of oscillation of the oscillator signal that this ring oscillator produced with this Control current.
Current Control annular oscillator provided by the present invention can utilize the frequency of oscillation of Current Control outputting oscillation signal, and can further improve the phase noise (Phase Noise) of traditional endless oscillator and the problem of phase jitter (Phase Jitter) by current type delay cell.
Below in execution mode, be described in detail detailed features of the present invention and advantage, its content is enough to make any those skilled in the art to understand technology contents of the present invention and implements according to this, and according to the disclosed content of this specification, claims and accompanying drawing, any those skilled in the art can understand purpose and the advantage that the present invention is correlated with easily.
Description of drawings
Fig. 1 is circuit diagram first example of the voltage controlled oscillator of known technology;
Fig. 2 is in the circuit diagram of Fig. 1, the circuit diagram of voltage-type delay cell;
Fig. 3 is circuit diagram second example of the voltage controlled oscillator of known technology;
Fig. 4 is in the circuit diagram of Fig. 3, the circuit diagram of voltage-type delay cell;
Fig. 5 A is circuit diagram first example of the current control oscillator in the embodiment of the invention;
Fig. 5 B is in the circuit diagram of Fig. 5 A, the circuit diagram of current type delay cell;
Fig. 6 A is circuit diagram second example of the current control oscillator in the embodiment of the invention;
Fig. 6 B is in the circuit diagram of Fig. 6 A, the circuit diagram of current type delay cell;
Fig. 7 is the control method flow chart of the ring oscillator in the embodiment of the invention;
The oscillator that Fig. 8 A is constituted for utilization known voltage formula delay cell and current type delay cell of the present invention under the frequency of oscillation of 5GHz, the phase noise simulation drawing that is produced; And
The oscillator that Fig. 8 B is constituted for utilization known voltage formula delay cell and current type delay cell of the present invention under the frequency of oscillation of 1.25GHz, the phase noise simulation drawing that is produced.
[main element symbol description]
100,200 ring oscillators
300,400 Current Control annular oscillator
110 charge pumps (Charge Pump, CP)
111 current sources
112 diverter switches
113 diverter switches
114 current sources
120 loop filters (Loop Filter, LF)
R1 resistance
C1, C2 electric capacity
130 voltage conversion circuits
140 annular oscillating units
140 ' annular oscillating unit
141,142,143,144 voltage-type delay cells
141 ', 142 ', 143 ', 144 ' current type delay cell
240 annular oscillating units
240 ' annular oscillating unit
241,242,243,244 voltage-type delay cells
241 ', 242 ', 243 ', 244 ' current type delay cell
The vibration of ICO Current Control
NMOS Transistor N type metal oxide semiconductor transistor
MP1, MP2, MN1, MN2, MR1, MR2 transistor
OUTN first output
OUTP second output
PMOS Transistor P-type mos transistor
The VCO voltage-controlled oscillating
The VSS reference voltage
INN, INP, PREP, the input of PREN difference
Embodiment
At first, please refer to Fig. 5 A, it is first example of Current Control annular oscillator in the embodiment of the invention.Current Control annular oscillator 300 includes: charge pump 110, in order to a charge/discharge current to be provided; Loop filter 120 is coupled to charge pump 110, in order to a control voltage Vc to be provided; Electric current and voltage converting unit 230 is coupled to charge pump 110 and this loop filter 120, is Control current Ic in order to conversion and control voltage Vc; And oscillating unit 140 ', comprise a plurality of current type delay cells (current mode delay cell) 141 ', 142 ', 143 ' and 144 ', it is connected in series each other and circularizes, being coupled to voltage changes current unit 230, is controlled a frequency of oscillation of an oscillator signal of its generation by Control current Ic; So-called herein current type delay cell has been meant that an electric current injects its power source supply end.
Wherein, the current type delay cell 141 ', 142 ', 143 ' and 144 ' in the middle of the annular oscillating unit 140 ' please refer to the framework of Fig. 5 B.
Shown in Fig. 5 B, current type delay cell 141 ', 142 ', 143 ' and 144 ' and the voltage-type delay cell structure of Fig. 2 identical, it is to adopt based on the precharge of latching (latch) technology (pre-charge) framework, wherein, the first transistor MP1, its source electrode is connected in voltage changes current unit 230, receives the Control current that it provides; Transistor seconds MN1, its drain electrode is connected in the drain electrode of the first transistor MP1 and forms the first output OUTN, and its grid is connected in the grid of the first transistor MP1 and forms first input end INP, and its source electrode then connects reference voltage Vss; The 3rd transistor MP2, its source electrode are connected in voltage changes current unit 230, receives the Control current that it provides; The 4th transistor MN2, its drain electrode is connected in the drain electrode of the 3rd transistor MP2 and forms the second output OUTP, and its grid is connected in the grid of the 3rd transistor MP2 and forms the second input INN, and its source electrode connects reference voltage Vss; It is right that the 5th transistor MR1 and the 6th transistor MR2 then form transistor, both drain electrodes and grid are to connecting, wherein, the drain electrode of the 5th transistor MR1 is connected to the first output OUTN, the drain electrode of the 6th transistor MR2 then is connected to the second output OUTP, and both source electrodes all are connected in reference voltage Vss; What need not note is, voltage changes Control current Ic that current unit 230 produced and understands injection current formula delay cell 141 ', 142 ', 143 ' and 144 ' power source supply end, that is the source electrode of the first transistor MP1 and the 3rd transistor MP2.
In the middle of the Current Control annular oscillator 300, the voltage conversion circuit among Fig. 1 130 is replaced with voltage-current converter circuit (V-I Converter) 230.Voltage-current converter circuit 230 control voltage Vc are converted to Control current signal I
C, wherein, I
C=g
m* V
Cg
mCan be constant, also can be variable, and unit is ampere/volt (A/V)).I
CInput to the Current Control input of the formula that the latchs circuit that the differential electrical streaming delay cell 141 ', 142 ', 143 ' and 144 ' that comprises level Four formed again, thereby control the output frequency of annular oscillating unit 140 '.
Then, please refer to Fig. 6 A, it is second example of Current Control annular oscillator in the embodiment of the invention.In the middle of the Current Control annular oscillator 400, the voltage conversion circuit among Fig. 3 130 is replaced with voltage-current converter circuit (V-I Converter) 230.Voltage-current converter circuit 230 control voltage Vc are converted to Control current signal I
C, wherein, I
C=g
m* V
Cg
mCan be constant, also can be variable, and unit is ampere/volt (A/V)).I
CInput to the Current Control input of the formula that the latchs circuit that the differential electrical streaming delay cell 241 ', 242 ', 243 ' and 244 ' that comprises level Four formed again, thereby control the output frequency of annular oscillating unit 240 '.
Shown in Fig. 6 B, current type delay cell 241 ', 242 ', 243 ' and 244 ' identical with the voltage-type delay cell structure of Fig. 4, wherein, the first transistor MP1, its source electrode are connected in voltage changes current unit 230, and its grid forms first input end INP; Transistor seconds MN1, its drain electrode is connected in the drain electrode of the first transistor MP1 and forms the first output OUTN, and its grid forms the second input PREP, and its source electrode then connects reference voltage Vss; The 3rd transistor MP2, its source electrode are connected in voltage changes current unit 230, and its grid forms the 3rd input INN; The 4th transistor MN2, its drain electrode is connected in the drain electrode of the 3rd transistor MP2 and forms the second output OUTP, and its grid forms four-input terminal PREN, and its source electrode connects reference voltage Vss; It is right that the 5th transistor MR1 and the 6th transistor MR2 then form transistor, both drain electrodes and grid are to connecting, wherein, the drain electrode of the 5th transistor MR1 is connected to the first output OUTN, the drain electrode of the 6th transistor MR2 then is connected to the second output OUTP and then is connected to the second output OUTP, and both source electrodes all are connected in reference voltage Vss; What need not note is, voltage changes Control current Ic that current unit 230 produced and understands injection current formula delay cell 241 ', 242 ', 243 ' and 244 ' power source supply end, that is the source electrode of the first transistor MP1 and the 3rd transistor MP2.
Next, please refer to Fig. 7, it is the control method flow chart of the ring oscillator in the embodiment of the invention, comprises following steps:
Step 501: a control voltage is provided; That is, control voltage Vc.
Step 502: conversion and control voltage is a Control current; That is, will control voltage Vc and be converted to Control current Ic.Aforesaid voltage-current converter circuit is realizes one of this step example.
Step 503 a: ring oscillator of being formed with a plurality of current type delay cells is provided.For example, the example of Fig. 5 B or Fig. 6 B all can adopt.
Step 504 a: frequency of oscillation of controlling the oscillator signal that this ring oscillator produced with Control current.
The present invention adopts the mode of Current Control annular oscillator output frequency, can allow the output signal amplitude of oscillation of ring oscillator not be subject to control signal, therefore, can access the higher amplitude of oscillation, lower phase noise simultaneously, has also improved the problem of phase jitter (Phase Jitter).
Concrete effect please refer to Fig. 8 A, 8B, and it has illustrated the analog result under different condition with the voltage-type delay cell of known technology and current type delay cell of the present invention respectively.Fig. 8 A system adjusts control voltage or Control current, and making the oscillator of voltage-type delay cell and the frequency of oscillation that oscillator produced of current type delay cell is 5GHz.Demonstrate among Fig. 8 A, the phase noise of current control mode (89.7dBc/Hz@1MHz offset) is starkly lower than the phase noise (82.9dBc/Hz@1MHz offset) under the voltage mode control.
Fig. 8 B has then illustrated the analog result under the frequency of oscillation of 1.25GHz, and wherein, the oscillator of current type delay cell is lower than the phase noise of the oscillator of voltage-type delay cell.
Though technology contents of the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; those skilled in the art; do not breaking away from spirit of the present invention a little change and the retouching done; all should be covered by in the scope of the present invention, so protection scope of the present invention is as the criterion when looking the appended claims person of defining.
Claims (13)
1. Current Control annular oscillator comprises:
One electric current and voltage converting unit is a Control current in order to change a control voltage; And
One oscillating unit comprises a plurality of current type delay cells, is connected in series mutually and circularizes, and being coupled to this voltage changes current unit, is controlled a frequency of oscillation of its oscillator signal that produces by this Control current.
2. Current Control annular oscillator as claimed in claim 1 also comprises:
One charge pump and one is coupled to the loop filter of this charge pump, in order to this control voltage to be provided.
3. Current Control annular oscillator as claimed in claim 1, wherein these current type delay cells are to latch the formula circuit.
4. Current Control as claimed in claim 3 annular oscillator, wherein this latchs the formula circuit and comprises:
One the first transistor, its first source electrode are connected in this voltage changes current unit;
One transistor seconds, its second drain electrode is connected in first drain electrode of this first transistor and forms one first output, and its second grid is connected in the first grid of this first transistor and forms a first input end, and its second source electrode connects a reference voltage;
One the 3rd transistor, its 3rd source electrode are connected in this voltage changes current unit;
One the 4th transistor, its 4th drain electrode are connected in the 3rd transistorized the 3rd drain electrode and form one second output, and its 4th grid is connected in the 3rd transistorized the 3rd grid and forms one second input, and its 4th source electrode connects this reference voltage;
One the 5th transistor, its 5th drain electrode is connected in this first output, and its 5th source electrode is connected in this reference voltage, and its 5th grid is connected in this second output; And
One the 6th transistor, its 6th drain electrode is connected in this second output, and its 6th source electrode connects this reference voltage, and its 6th grid is connected in this first output.
5. Current Control annular oscillator as claimed in claim 4, wherein this first transistor and the 3rd transistor are the P-type mos transistor, and this transistor seconds, the 4th transistor, the 5th transistor AND gate the 6th transistor are N type metal oxide semiconductor transistor.
6. Current Control as claimed in claim 3 annular oscillator, wherein this latchs the formula circuit and comprises:
One the first transistor, its first source electrode are connected in this voltage changes current unit, and its first grid forms a first input end;
One transistor seconds, its second drain electrode is connected in first drain electrode of this first transistor and forms one first output, and its second grid forms one second input, and its second source electrode connects a reference voltage;
One the 3rd transistor, its 3rd source electrode are connected in this voltage changes current unit, and its 3rd grid forms one the 3rd input;
One the 4th transistor, its 4th drain electrode are connected in the 3rd transistorized the 3rd drain electrode and form one second output, and its 4th grid forms a four-input terminal, and its 4th source electrode connects this reference voltage;
One the 5th transistor, its 5th drain electrode is connected in this first output, and its 5th source electrode is connected in this reference voltage, and its 5th grid is connected in this second output; And
One the 6th transistor, its 6th drain electrode is connected in this second output, and its 6th source electrode connects this reference voltage, and its 6th grid is connected in this first output.
7. Current Control annular oscillator as claimed in claim 6, wherein this first transistor and the 3rd transistor are the P-type mos transistor, and this transistor seconds, the 4th transistor, the 5th transistor AND gate the 6th transistor are N type metal oxide semiconductor transistor.
8. Current Control annular oscillator comprises:
A plurality of current type delay cells are connected in series mutually and circularize, to export an oscillator signal; And
One Control current source is coupled to these current type delay cell, a Control current to be provided and to be injected into the power source supply end of these current type delay cells, to control the frequency of oscillation of this oscillator signal.
9. Current Control annular oscillator as claimed in claim 8, wherein these current type delay cells are to latch the formula circuit.
10. Current Control as claimed in claim 9 annular oscillator, wherein this latchs the formula circuit and comprises:
One the first transistor, its first source electrode are connected in this voltage changes current unit;
One transistor seconds, its second drain electrode is connected in first drain electrode of this first transistor and forms one first output, and its second grid is connected in the first grid of this first transistor and forms a first input end, and its second source electrode connects a reference voltage;
One the 3rd transistor, its 3rd source electrode are connected in this voltage changes current unit;
One the 4th transistor, its 4th drain electrode are connected in the 3rd transistorized the 3rd drain electrode and form one second output, and its 4th grid is connected in the 3rd transistorized the 3rd grid and forms one second input, and its 4th source electrode connects this reference voltage;
One the 5th transistor, its 5th drain electrode is connected in this first output, and its 5th source electrode is connected in this reference voltage, and its 5th grid is connected in this second output; And
One the 6th transistor, its 6th drain electrode is connected in this second output, and its 6th source electrode connects this reference voltage, and its 6th grid is connected in this first output.
11. Current Control annular oscillator as claim 10, wherein this first transistor and the 3rd transistor are the P-type mos transistor, and this transistor seconds, the 4th transistor, the 5th transistor AND gate the 6th transistor are N type metal oxide semiconductor transistor.
12. Current Control as claimed in claim 9 annular oscillator, wherein this latchs the formula circuit and comprises:
One the first transistor, its first source electrode are connected in this voltage changes current unit, and its first grid forms a first input end;
One transistor seconds, its second drain electrode is connected in first drain electrode of this first transistor and forms one first output, and its second grid forms one second input, and its second source electrode connects a reference voltage;
One the 3rd transistor, its 3rd source electrode are connected in this voltage changes current unit, and its 3rd grid forms one the 3rd input;
One the 4th transistor, its 4th drain electrode are connected in the 3rd transistorized the 3rd drain electrode and form one second output, and its 4th grid forms a four-input terminal, and its 4th source electrode connects this reference voltage;
One the 5th transistor, its 5th drain electrode is connected in this first output, and its 5th source electrode is connected in this reference voltage, and its 5th grid is connected in this second output; And
One the 6th transistor, its 6th drain electrode is connected in this second output, and its 6th source electrode connects this reference voltage, and its 6th grid is connected in this first output.
13. Current Control annular oscillator as claim 12, wherein this first transistor and the 3rd transistor are the P-type mos transistor, and this transistor seconds, the 4th transistor, the 5th transistor AND gate the 6th transistor are N type metal oxide semiconductor transistor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101523439A CN101938265A (en) | 2009-06-30 | 2009-06-30 | Current control ring oscillator and control method thereof |
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| CN2009101523439A CN101938265A (en) | 2009-06-30 | 2009-06-30 | Current control ring oscillator and control method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532546A (en) * | 2012-07-02 | 2014-01-22 | 中芯国际集成电路制造(上海)有限公司 | Oscillator |
| CN105337496A (en) * | 2014-05-29 | 2016-02-17 | 展讯通信（上海）有限公司 | Pulse frequency modulation circuit based on voltage controlled oscillator |
| CN111224621A (en) * | 2020-01-22 | 2020-06-02 | 重庆芯龙科技有限公司 | Automatic amplitude control oscillation circuit and crystal-free high-precision clock generator |
-
2009
- 2009-06-30 CN CN2009101523439A patent/CN101938265A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532546A (en) * | 2012-07-02 | 2014-01-22 | 中芯国际集成电路制造(上海)有限公司 | Oscillator |
| CN103532546B (en) * | 2012-07-02 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Oscillator |
| CN105337496A (en) * | 2014-05-29 | 2016-02-17 | 展讯通信（上海）有限公司 | Pulse frequency modulation circuit based on voltage controlled oscillator |
| CN105337496B (en) * | 2014-05-29 | 2019-06-25 | 展讯通信（上海）有限公司 | Pulse frequency modulation circuit based on voltage controlled oscillator |
| CN111224621A (en) * | 2020-01-22 | 2020-06-02 | 重庆芯龙科技有限公司 | Automatic amplitude control oscillation circuit and crystal-free high-precision clock generator |
| CN111224621B (en) * | 2020-01-22 | 2023-07-07 | 重庆芯龙科技有限公司 | Automatic amplitude control oscillating circuit and crystal-free high-precision clock generator |
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Application publication date: 20110105 |