CN101937721B - Method for testing memory device - Google Patents
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- CN101937721B CN101937721B CN 201010244001 CN201010244001A CN101937721B CN 101937721 B CN101937721 B CN 101937721B CN 201010244001 CN201010244001 CN 201010244001 CN 201010244001 A CN201010244001 A CN 201010244001A CN 101937721 B CN101937721 B CN 101937721B
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Abstract
The invention discloses a method for testing a memory device, which comprises the following specific steps: (1) dividing a memory region of the memory device, dividing the memory device into a plurality of sectors and further dividing each sector into a plurality of regions; (2) carrying out data filling in the plurality of the divided regions of each sector; and (3) reading data which is filled to each sector of the memory device, judging whether the memory device is normal or not, that is judging whether the read first identification data and the data stored in the follow-up regions are consistent with the corresponding written data or not, if not, determining that the memory device has a problem.
Description
Technical field
The present invention relates to a kind of method of test storage device, comprise whether test storage device physical address is corresponding one by one with logical address, and whether the data that leave in the memory device are reliable.
Background technology
From MP3 to the mobile phone, palm PC all needs the large-capacity data storer in the portable equipment that increasing people carries, and in these equipment, NAND Flash has become a kind of hardware plan of extensively being approved and adopting by industry.Unquestionable theory, NAND Flash is the first-selected nonvolatile memory of portable equipment.High density, low price, writing speed, and the long life-span that re-writes faster makes NAND Flash be specially adapted to media application, in these equipment, all needs the jumbo file of quick repeated operation.
Along with the extensive utilization in electronic product of NAND flash memory device, the NANDflash memory device is in people's production, the occupying an important position of life.NAND flash memory device has that speed is fast, volume is little, compatibility is good, easy to carry, capacity is big, the life-span is long, light weight; The structure of NAND flash memory device possesses the shake of not being afraid of, more anti-falling; Faster data reading speed etc. is provided, has other memory device incomparable advantage.
The characteristics of NAND flash and problem:
(1) there is bad piece.Because NAND flash production technology bad piece can occur in the chip that dispatches from the factory at random.Bad piece is initialised when dispatching from the factory, and in special area, be labeled as unavailable, in use if bad piece also need carry out mark.
(2) be prone to bit reversal.NAND FLASH more is prone to the phenomenon of bit reversal, if bit reversal appears on the critical file, can cause system's on-hook.So when using NANDFLASH, suggestion uses the ECC/EDC algorithm to guarantee reliability.
(3) there is the Spare district.Just because of NAND FLASH has two top special places, just play the part of and deposit bad block mark, the effect of ECC value and chip information and fileinfo in the Spare district.
(4) space structure of multidimensional.NAND FLASH is generally by block, page, and structures such as sector are formed.So in the file system that has, just derive various partition informations and sector auxiliary information etc.
Summary of the invention
The present invention proposes a kind of method of test storage device, and whether be used for detection of stored device physics address corresponding one by one with logical address, and whether the data that leave in the memory device are reliable.
Realize that the technical scheme that the object of the invention adopted is:
A kind of method of test storage device, whether be used for detecting the data that leave memory device in reliable, and this method comprises the steps:
(1) memory block of memory device is divided, memory device is divided into a plurality of sectors, again each sector is divided into a plurality of zones;
(2) a plurality of zones of each sector being divided are carried out data and are filled
(2.1) in the regional data of filling certain format of the top n of each sector, wherein N is a positive integer;
(2.2) a plurality of zones of back, the said top n in each sector zone are filled successively the data of certain format; Wherein, In said follow-up a plurality of zones; First regional data are calculated through predetermined algorithm by the data in top n zone, and the data that each zone, back is filled are obtained through this algorithm computation by the data in its previous zone;
(3) read above-mentioned each sectors of data of memory device that is filled into; And and then judge whether said memory device normal; Judge promptly whether the top n that reads out data regional and follow-up area stores are consistent with corresponding padding data,, then judge this memory device existing problems if inconsistent.
As further improvement of the present invention, in the described step (2.1), the data of the certain format of said filling comprise the initial logical address and the current time in system at place, sector; The initial logical address at place, said sector is deposited from first byte in said top n zone successively backward, and the said current time is deposited in the last of said top n zone, and the residue storage area is filled with arbitrary data.
As further improvement of the present invention, the predetermined algorithm in the described step (2.2) is MD5 algorithm or various AES.
As further improvement of the present invention, the concrete deterministic process in the described step (3) is:
(A) judge whether the data that read in said top n zone from each sector are consistent with corresponding padding data; Specifically comprise: judge whether the address that reads out in each sector is identical with the initial logical address of sector, and whether the time in each sectors of data is consistent with the time that writes data;
(B) judge whether the data that read in said follow-up each zone are consistent with corresponding padding data; Be specially: the data in first sectors of data in said follow-up each zone and said top n zone are compared through the data that said algorithm computation obtains; Each sector sectors of data last with it of back, said first sector compared through the data that said algorithm computation obtains, judge whether each corresponding data is consistent.
As further improvement of the present invention, described arbitrary data can be the sexadecimal of any one or combination among 00 to ff, the data that sector place logical address or place, sector logical address obtain according to said algorithm computation
As further improvement of the present invention, described storer is NAND flash.
As further improvement of the present invention, described sector-size is 512 bytes, and said area size is 16 bytes.
As further improvement of the present invention, described N is 2.
The invention has the beneficial effects as follows:
(1) makes test result more rationally reliable, more can find the position at problem and problem place;
(2) each the data cell relevance that writes a little less than, occur mutual interference in preventing to test and cause some problem not find.
(3) the data interdependence that writes in the test data unit in the NAND flash storer is strong;
(4) joining day can find the problem of hiding with in the Pretesting in test data.
Description of drawings
Fig. 1 is the sector of NAND flash memory device is divided into 32 16 byte-sized in test data block figure;
Fig. 2 is the generating mode that writes each sectors of data of tested NAND flash memory device;
Fig. 3 reads the method that the data of tested NAND flash memory device are analyzed;
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is done further explain.
Memory device in the present embodiment is NAND flash, and the method that is used to test the NANDflash memory device of the present invention comprises the steps:
One, the storage area of memory device is divided
Present embodiment is a sector with 512 bytes, and memory device is divided into a plurality of sectors, again each sector is divided into a plurality of zones, for example is divided into 32 16 byte area.See accompanying drawing 1 for details.The sector-size and the area size of dividing can be provided with and adjust according to actual needs.
Two, data being carried out in a plurality of zones of above-mentioned division fills
(1) front area in each sector writes first unlabeled data, as in 32 initial bytes of each sector, writing data as follows:
1) gets place, sector initial logical address, deposit successively backward from first byte of 32 bytes.Usually, the initial logical address length of sector is no more than 25 byte lengths.
2) obtain the computer current time according to year two bytes, month byte, day byte, hour byte, minute byte, second byte is put into last 7 bytes of 32 bytes.(date data makes decimally)
3) part of not using in 32 bytes is filled with any number, does comparison when the numerical value of noting filling is used to read this sector.Can use several kinds of data in the actual test.
● the byte of filling is with using 00 to ff any sexadecimal more clocklike that perhaps makes up.
● use the logical address circulation of place, sector to fill,, remove the back redundant data of the logical address that last filling comes in, perhaps the unnecessary data in the front of logical address if not the integer of logical address byte-sized.
● logical address is carried out the data filling that MD5 calculates, remove and fill the remaining data in back.
(2) to follow-up a plurality of zones, each sector padding data successively, data that each zone is filled are obtained through certain algorithm computation by the data in previous zone.Described algorithm can be MD5, various AESs etc.
Being example with the MD5 algorithm in the present embodiment, is that the zone of 16 bytes is carried out data and filled to size.Detailed process is:
The data that 32 bytes of the beginning of sector are generated one 16 byte with the MD5 algorithm write in the data block of follow-up first 16 byte of the sector of surveying; Data with above-mentioned first 16 byte data 16 bytes that computing obtains through MD5 write in the data block of next 16 bytes again, take turns doing same operation till writing full sector.Can once write the numerical value of a plurality of sectors in the test.
Three, read and above-mentionedly be written to each sectors of data of memory device, and judge whether said memory device is normal.If whether the data of first identification data that promptly reads out and follow-up area stores are consistent with the corresponding data that writes,
Detailed process is following:
(1) if whether the address that reads out in each sector is identical with the first address of sector, difference then possibly have problems.
Whether the time of (2) comparing in each sectors of data is consistent with the time that writes data, and the report sector writes the time of data when inconsistent, with this interpretation problems place.
Whether the data that 32 bytes that begin in (3) sectors are filled are correct.
(4) whether second 16 byte data be consistent in the data that first sector calculated through MD5 and the sector, so relatively goes down, and knows the comparison of the whole sector data of completion.
(5) can once read a plurality of sectors of data in the test and compare, obtain a result.Through method of the present invention, the problem that can test out memory device comprises:
(1) logical address is at the inconsequent that reads and writes data.Read certain sector write data the time logical address and sense data the time logical address correspondence problem not.
(2) time is inconsistent.The time that reads is inconsistent with the last time that writes sectors of data.
(3) data produce mistake.Data have relevance in 32 the 16 byte data pieces that are divided in sector, in case data somewhere produce mistake, follow-up data all produce mistake, find misdata to begin to produce wrong place most.
(4) storage problem.The data that data write and the read activation that differs is differentiated and to be storage problem.
Claims (8)
1. the method for a test storage device, whether be used for detecting the data that leave memory device in reliable, and this method comprises the steps:
(1) memory block of memory device is divided, memory device is divided into a plurality of sectors, again each sector is divided into a plurality of zones;
(2) a plurality of zones of each sector being divided are carried out data and are filled;
(2.1) in the regional data of filling certain format of the top n of each sector, wherein N is a positive integer;
(2.2) follow-up a plurality of zones, the said top n in each sector zone are filled successively the data of certain format; Wherein, In said follow-up a plurality of zones; First regional data are calculated through predetermined algorithm by the data in top n zone, and the data that each zone, back is filled are obtained through this algorithm computation by the data in its previous zone;
(3) read above-mentioned each sectors of data of memory device that is filled into; And and then judge whether said memory device normal; Judge promptly whether the top n that reads out data regional and follow-up area stores are consistent with corresponding padding data; If inconsistent, then judge this memory device existing problems.
2. the method for a kind of test storage device according to claim 1 is characterized in that, in the described step (2.1), the data of the certain format of said filling comprise the initial logical address and the current time in system at place, sector; The initial logical address at place, said sector is deposited from first byte in said top n zone successively backward, and the said current time is deposited in the last of said top n zone, and the residue storage area is filled with arbitrary data.
3. the method for a kind of test storage device according to claim 2 is characterized in that, the predetermined algorithm in the described step (2.2) is various AESs.
4. according to the method for claim 2 or 3 described a kind of test storage devices, it is characterized in that the concrete deterministic process in the described step (3) is:
(A) judge whether the data that read in said top n zone from each sector are consistent with corresponding padding data; Specifically comprise: judge whether the address that reads out in each sector is identical with the initial logical address of sector, and whether each sector time that reads out and the time that writes is consistent;
(B) judge whether the data that read in said follow-up each zone are consistent with corresponding padding data; Be specially: the data in first regional data in said follow-up each zone and said top n zone are compared through the data that said algorithm computation obtains; The data in each zone previous with it, zone at the back, said first zone are compared through the data that said algorithm computation obtains, judge whether each corresponding data is consistent.
5. according to the method for claim 2 or 3 described a kind of test storage devices, it is characterized in that described arbitrary data can be the sexadecimal of any one or combination among 00 to ff.
6. according to the method for the described a kind of test storage device of one of claim 1-3, it is characterized in that described memory device is NAND flash.
7. according to the method for the described a kind of test storage device of one of claim 1-3, it is characterized in that described sector-size is 512 bytes, said area size is 16 bytes.
8. according to the method for the described a kind of test storage device of one of claim 1-3, it is characterized in that described N is 2.
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| CN103165194B (en) * | 2011-12-16 | 2017-05-24 | 天津中兴智联科技有限公司 | Method and apparatus for rapid detection of large-capacity NOR Flash |
| CN103295645B (en) * | 2012-02-23 | 2016-03-09 | 安凯(广州)微电子技术有限公司 | A kind of scanning detection method of dynamic storage and system |
| CN103366824B (en) * | 2012-03-31 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | Non-volatility memorizer reading speed test circuit |
| CN103902419B (en) * | 2014-03-28 | 2017-12-22 | 华为技术有限公司 | A kind of cache testing method and device |
| CN104780123B (en) * | 2015-04-28 | 2018-02-13 | 福州瑞芯微电子股份有限公司 | A kind of network pack receiving and transmitting processing unit and its design method |
| CN105607961B (en) * | 2015-12-17 | 2019-03-08 | 北京兆易创新科技股份有限公司 | A method of scanning error bit |
| CN106653094B (en) * | 2016-08-30 | 2019-07-16 | 北京中电华大电子设计有限责任公司 | A kind of nonvolatile storage endurance Physical data model test method |
| CN106558348A (en) * | 2016-11-11 | 2017-04-05 | 北京京存技术有限公司 | A kind of eMMC readwrite tests method and apparatus |
| CN108054114A (en) * | 2018-01-12 | 2018-05-18 | 江苏华存电子科技有限公司 | A kind of method for improving flash memory availability |
| CN109448774B (en) * | 2018-10-15 | 2021-03-19 | 上海华虹宏力半导体制造有限公司 | Method for judging interference storage area position of flash memory |
| CN109542685A (en) * | 2018-11-20 | 2019-03-29 | 江门市兰格电子有限公司 | Checking memory data method, apparatus, equipment and medium based on more sectors |
| CN109947364A (en) * | 2019-02-01 | 2019-06-28 | 浙江蓝点动力科技有限公司 | A kind of method for storing real-time data in FLASH/EEPROM |
| CN109979518B (en) * | 2019-03-07 | 2021-04-20 | 深圳警翼智能科技股份有限公司 | Bad area identification method and system for storage medium of law enforcement recorder |
| CN111949426A (en) * | 2019-05-16 | 2020-11-17 | 北京兆易创新科技股份有限公司 | Firmware program error detection method and device and storage equipment |
| CN112420114B (en) * | 2020-11-04 | 2023-07-18 | 深圳市宏旺微电子有限公司 | Fault detection method and device for memory chip |
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| CN101763902A (en) * | 2008-12-23 | 2010-06-30 | 慧帝科技(深圳)有限公司 | Method and device thereof for measuring storage device |
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| US7546515B2 (en) * | 2005-12-27 | 2009-06-09 | Sandisk Corporation | Method of storing downloadable firmware on bulk media |
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| CN101763902A (en) * | 2008-12-23 | 2010-06-30 | 慧帝科技(深圳)有限公司 | Method and device thereof for measuring storage device |
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