CN108054114A - A kind of method for improving flash memory availability - Google Patents
A kind of method for improving flash memory availability Download PDFInfo
- Publication number
- CN108054114A CN108054114A CN201810030674.4A CN201810030674A CN108054114A CN 108054114 A CN108054114 A CN 108054114A CN 201810030674 A CN201810030674 A CN 201810030674A CN 108054114 A CN108054114 A CN 108054114A
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- flash memory
- logic unit
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- improving
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
The invention discloses a kind of methods for improving flash memory availability, first determine whether the identification number of each logic unit of flash memory, whether all see and exist, then test data is write to all spaces of flash memory, the comparison of data is carried out in next step, analyze the result that front is tested again, if all logic units are all normal, then it is directly entered production status, if there is logic unit cannot use, then the legal number of logic cells of energy after flash memory logic unit deallocation, will be chosen using hardware and produced, the present invention can reach the utilization rate for improving flash memory, reduce the purpose of the loss of client.
Description
Technical field
The present invention relates to flash memory technology fields, are specially a kind of method for improving flash memory availability.
Background technology
Flash memory is a kind of depositing for non-volatile (the remaining to keep stored data message under powering-off state) of long-life
Reservoir, data deletion is not in units of single byte but in units of fixed block, and block size is generally 256KB
To 20MB.Flash memory is the mutation of Electrical Erasable read-only memory (EEPROM), and flash memory is unlike EEPROM, EEPROM energy
It is deleted and is rewritten in byte-level rather than entire chip is erasable, and most of chip of flash memory needs block to wipe.By
It remaining to preserve data when it is powered off, flash memory is usually used to preservation configuration information, BIOS (base program) such as in computer,
Preservation data etc. in PDA (personal digital assistant), digital camera；Flash memory is just sent out towards the direction of large capacity, low-power consumption, low cost
Exhibition.Compared with conventional hard, the read or write speed height of flash memory, power consumption are relatively low, have occurred flash memory hard disk in the market, that is,
SSD hard disks, the cost performance of the hard disk are further promoted.With the raising of manufacturing process, the reduction of cost, flash memory will more go out
Among present daily life.
Flash memory is the memory device of non-deorienting, and flash memory stores a bit, erasable number in a memory cell
It 100000 times, evolves in a memory cell and stores two bits, erasable number 5000 to 10000 times, to the one of newest proposition
Store three bits in a memory cell, erasable number 1000 times.New flash memory is released, and service life is reduced, and the service life reduces meeting
Error bit incidence is caused to improve.Therefore data correctness can be increased, becomes an important subject under discussion.
Flash memory is the memory device of non-deorienting, and by page blocking, then the set being made of block becomes logic unit,
And the flash memory of a large capacity not only Ge logic units, have 2,4,8 ... and wait a logic unit.But the large capacity of inferior quality dodges
The situation that can not be used with some logic unit often is deposited, 2 n times power logic unit is so needed in flash firmware
Under the operation of (in addition to 1 logic unit), it can lead to not use.In addition the mode generally increased operation rate is only for page
Or block processes, can only just whole flash memory be abandoned by running into the damage of logic unit level.
The content of the invention
It is an object of the invention to provide a kind of method for improving flash memory availability, to solve to carry in above-mentioned background technology
The problem of going out.
To achieve the above object, the present invention provides following technical solution：A kind of method for improving flash memory availability, including
Following steps：
A, first determine whether the identification number of each logic unit of flash memory, whether all see and exist；
B, test data then is write to all spaces of flash memory, carries out the comparison of data in next step, then to analyze front test
Result；
If C, all logic units are all normal, then production status is directly entered,；
D, if there is logic unit cannot use, then using hardware by after flash memory logic unit deallocation, rule can be met by choosing
Number of logic cells then is produced.
Preferably, the flash memory logic unit in the step A has 1024 blocks, and each block has 256 pages, and each page has 32
A sector is composed.
Compared with prior art, the beneficial effects of the invention are as follows：In the present invention, distinguishing for each logic unit of flash memory is first determined whether
Whether knowledge number, see all and exist, and test data is then write to all spaces of flash memory, carries out the comparison of data in next step, then comes
The result that analysis front is tested, if all logic units are all normal, is then directly entered production status, if there is logic unit
It cannot use, then after flash memory logic unit deallocation, will be chosen using hardware can legal number of logic cells progress
Production, the present invention can reach the utilization rate for improving flash memory, and that reduces client loses to obtain purpose.
Description of the drawings
Fig. 1 is flow chart of the present invention.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
Referring to Fig. 1, the present invention provides a kind of technical solution：A kind of method for improving flash memory availability, including following
Step：
A, first determine whether the identification number of each logic unit of flash memory, whether all see and exist；Wherein, flash memory logic unit has 1024
Block, each block have 256 pages, and each page has 32 sectors to be composed；
B, test data then is write to all spaces of flash memory, carries out the comparison of data in next step, then to analyze front test
Result；
If C, all logic units are all normal, then production status is directly entered,；
D, if there is logic unit cannot use, then using hardware by after flash memory logic unit deallocation, rule can be met by choosing
Number of logic cells then is produced.
It illustrates:Flash memory has 4 logic units, and position is respectively 0,1,2,3, it is assumed that the logic unit damage of position 1
It is bad, then it goes to substitute according to capacity position 2 or 3, if substituted with 2, then produces and logic unit 0,2 can be used, open half appearance
Production, vice versa.The utilization rate for improving flash memory can thus be reached, reduce the loss of client.
In the present invention, the identification number of each logic unit of flash memory is first determined whether, whether all see and exist, then own to flash memory
Space writes test data, carries out the comparison of data in next step, then analyzes the result that front is tested, if all logic lists
Member is all normal, then is directly entered production status, if there is logic unit cannot use, then using hardware by flash memory logic list
After first deallocation, choose the legal number of logic cells of energy and produced, the present invention can reach the utilization for improving flash memory
Rate, that reduces client loses to obtain purpose.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (2)
- A kind of 1. method for improving flash memory availability, it is characterised in that：Comprise the following steps：A, first determine whether the identification number of each logic unit of flash memory, whether all see and exist；B, test data then is write to all spaces of flash memory, carries out the comparison of data in next step, then to analyze front test Result；If C, all logic units are all normal, then production status is directly entered,；D, if there is logic unit cannot use, then using hardware by after flash memory logic unit deallocation, rule can be met by choosing Number of logic cells then is produced.
- 2. a kind of method for improving flash memory availability according to claim 1, it is characterised in that：In the step A Flash memory logic unit has 1024 blocks, and each block has 256 pages, and each page has 32 sectors to be composed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810030674.4A CN108054114A (en) | 2018-01-12 | 2018-01-12 | A kind of method for improving flash memory availability |
| PCT/CN2018/099757 WO2019136978A1 (en) | 2018-01-12 | 2018-08-09 | Method for improving availability of flash memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810030674.4A CN108054114A (en) | 2018-01-12 | 2018-01-12 | A kind of method for improving flash memory availability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108054114A true CN108054114A (en) | 2018-05-18 |
Family
ID=62127137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810030674.4A Pending CN108054114A (en) | 2018-01-12 | 2018-01-12 | A kind of method for improving flash memory availability |
Country Status (2)
| Country | Link |
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| CN (1) | CN108054114A (en) |
| WO (1) | WO2019136978A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019136978A1 (en) * | 2018-01-12 | 2019-07-18 | 江苏华存电子科技有限公司 | Method for improving availability of flash memory |
| CN116206639A (en) * | 2023-03-08 | 2023-06-02 | 江苏华存电子科技有限公司 | Data storage device with good protection effect and use method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090068620A (en) * | 2007-12-24 | 2009-06-29 | 주식회사 하이닉스반도체 | Method of operating a non volatile memory device |
| CN101937721A (en) * | 2010-08-04 | 2011-01-05 | 武汉天喻信息产业股份有限公司 | Method for testing memory device |
| JP5862350B2 (en) * | 2012-02-16 | 2016-02-16 | 株式会社デンソー | Flash memory writing device, flash memory writing control method, and program |
| CN105511981A (en) * | 2015-11-24 | 2016-04-20 | 上海斐讯数据通信技术有限公司 | Method for rapidly detecting NAND Flash memory |
| CN106057246A (en) * | 2016-06-03 | 2016-10-26 | 北京兆易创新科技股份有限公司 | Method for replacing defective pixel units in non-volatile memory |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4258366B2 (en) * | 2003-12-15 | 2009-04-30 | 横河電機株式会社 | builder |
| CN101369463B (en) * | 2007-08-17 | 2012-12-12 | 深圳芯邦科技股份有限公司 | Flash memory detection classification method |
| CN101752008B (en) * | 2008-12-05 | 2013-07-10 | 建兴电子科技股份有限公司 | Method for testing reliability of solid-state storage media |
| CN105740163A (en) * | 2016-01-29 | 2016-07-06 | 山东鲁能智能技术有限公司 | Nand Flash bad block management method |
| CN106648463B (en) * | 2016-12-21 | 2020-06-16 | 广州立功科技股份有限公司 | Nand Flash block management method and system |
| CN108054114A (en) * | 2018-01-12 | 2018-05-18 | 江苏华存电子科技有限公司 | A kind of method for improving flash memory availability |
-
2018
- 2018-01-12 CN CN201810030674.4A patent/CN108054114A/en active Pending
- 2018-08-09 WO PCT/CN2018/099757 patent/WO2019136978A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090068620A (en) * | 2007-12-24 | 2009-06-29 | 주식회사 하이닉스반도체 | Method of operating a non volatile memory device |
| CN101937721A (en) * | 2010-08-04 | 2011-01-05 | 武汉天喻信息产业股份有限公司 | Method for testing memory device |
| JP5862350B2 (en) * | 2012-02-16 | 2016-02-16 | 株式会社デンソー | Flash memory writing device, flash memory writing control method, and program |
| CN105511981A (en) * | 2015-11-24 | 2016-04-20 | 上海斐讯数据通信技术有限公司 | Method for rapidly detecting NAND Flash memory |
| CN106057246A (en) * | 2016-06-03 | 2016-10-26 | 北京兆易创新科技股份有限公司 | Method for replacing defective pixel units in non-volatile memory |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019136978A1 (en) * | 2018-01-12 | 2019-07-18 | 江苏华存电子科技有限公司 | Method for improving availability of flash memory |
| CN116206639A (en) * | 2023-03-08 | 2023-06-02 | 江苏华存电子科技有限公司 | Data storage device with good protection effect and use method thereof |
Also Published As
| Publication number | Publication date |
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| WO2019136978A1 (en) | 2019-07-18 |
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