CN109065092A - The reading threshold setting method and its device of NVM chip - Google Patents

Abstract

Provide the reading threshold setting method and its device of NVM chip.The method of disclosed setting threshold value, comprising: read multiple pages in the first wordline；Determine the data mode of multiple storage units in the first wordline；According to the first data mode of storage unit being written into and the adjustment direction value of the second data mode read identification first threshold and first threshold；The adjustment direction value of the accumulative first threshold identified from the multiple storage unit, obtains the adjusted value of first threshold；And first threshold is updated with the adjusted value of first threshold.

Description

The reading threshold setting method and its device of NVM chip

Technical field

This application involves solid-states to store equipment firmly, and in particular, to is arranged from NVM chip and reads the optimal threshold of data The method and apparatus of voltage.

Background technique

Flash memory stores information by keeping the quantity of electric charge in the memory unit.The quantity of electric charge in storage unit determines storage The read-out voltage of unit.When reading flash data, compare read-out voltage and the threshold voltage of storage unit to identify that storage is single The information that member is stored.But since the quantity of electric charge of storage unit is by many factors such as the quality of storage unit, service life, times It influences, and leads to the reading of storage unit to the heterogencity of the signal transmission path of sense amplifier from multiple storage units Voltage changes out, and then causes the data read from storage unit there are some deviations, can not correctly embody original to depositing The information of storage unit write-in.Threshold voltage may include writing threshold value for the reading threshold value of read operation and for write operation.

Prevent or cope with to lead because of the variation of the factors such as the quantity of electric charge of storage unit using some means in the prior art Data the problem of can not correctly embodying the data of write-in for causing to read, for example, in United States Patent (USP) US9070454B1, according to depositing The factors such as the erasable number of storage unit, retention time calculate threshold voltage and (read data from storage unit or to storage unit The threshold voltage or judgement voltage used when middle write-in data), and number is written to storage unit using calculated threshold voltage According to.

In flash chip, by indicating different parameters for read operation, come threshold value electricity used when selecting read operation Pressure.By the read operation with different threshold voltages, the data read from storage unit have different results.Some results tool Have lower bit error rate (percentage of the total bit number of Bit Error Ratio, error bit and transmission), and some are tied Fruit bit error rate with higher.ECC (Error Correction Cod e, the error-correcting code) technology of combined use, tool The probability for having the reading result of lower bit error rate to be corrected by ECC technology is higher.Different parameters are attempted to pass through, to answer To the mistake encountered in read operation.Parameter, which may be incorporated in, is supplied to flash chip in read operation.Alternatively, being set in flash chip The parameter for read operation is set, and when flash chip handles read operation, use set parameter.

Data are usually stored and read on storage medium by page, and data are erased in blocks.In general, block includes multiple Page, the page (referred to as Physical Page) on storage medium has fixed size, such as 17664 bytes, and certainly, Physical Page can also have There are other sizes.When reading or data being written, identical threshold voltage is arranged in generally each page of all storage units.

Fig. 1 illustrates the structure of the flash memory storage medium of the prior art.Flash block includes a plurality of wordline and bit line.Wordline coupling It has closed multiple for storing the transistor of information, one storage unit (Cn, Cn-1 ..., C1, C0) of each transistor offer.Often A storage unit can store 1 bit or multi-bit data.Multiple storage units in every wordline provide one or more physics Page.The bit storage of a Physical Page is constituted in the transistor for being coupled to same wordline.

Memory target (Target) is that the shared chip in flash chip enables the one of (CE, Chip Enable) signal A or multiple logic units (LUN, Logic UNit).It may include one or more tube cores (Die) in flash chip.Typically, Logic unit corresponds to single tube core.Logic unit may include multiple planes (Plan e).Multiple planes in logic unit Can be with parallel access, and multiple logic units in flash chip can execute order and report state independently of one another.Can From http://www.micron.com/~/media/Documents/Prod ucts/Other%20Documents/ " the Open NAND Flash Interface S pecification (Revision that ONFI3_0Gold.ashx is obtained 3.0) it in ", provides about target (target), logic unit (LUN), the meaning of plane (Plane), is the prior art A part.

Summary of the invention

For storing the novel storage unit of more bit informations and the novel flash of 3D structure in each storage unit It deposits, traditional threshold voltage acquisition methods are unable to meet demand.With the erasable number of storage unit, read-around number, time, temperature Factors, the states of storage unit such as degree change, and cause under different factors, will obtain difference using identical threshold voltage Reading result.The variation of the threshold voltage of tracking memory cell is needed, to obtain and use optimal threshold voltage single from storage Data are read in member.

According to the application in a first aspect, providing the method according to the first of the application first aspect the setting threshold value, comprising: Read multiple pages in the first wordline；Determine the data mode of multiple storage units in the first wordline；According to more in the first wordline The data mode of a storage unit obtains more than first a storage unit relevant to first threshold；It is single according to more than first storages The bit error rate of member, obtains the optimum value of first threshold；And first threshold is updated with the optimum value of first threshold.

According to the method for the first of the application first aspect the setting threshold value, second according to the application first aspect is provided The method of threshold value is set, further includes: in response to data read command, is read with updated first threshold and is belonged to the first wordline The page of same logical units or tube core.

The method of threshold value is set according to the first or second of the application first aspect, is provided according to the application first aspect Third setting threshold value method, wherein a storage unit more than described first is that have the first data mode and the second data mode One of storage unit, the first data mode and the second data mode are that the read-out voltage distribution distinguished by first threshold is adjacent State.

According to the first of the application first aspect to third setting threshold value one of method, provide according to the application first The method of 4th setting threshold value of aspect, further includes: according to the data mode of multiple storage units in the first wordline, obtain with Relevant more than the second a storage unit of second threshold；According to the bit error rate of more than second a storage units, second threshold is searched for Optimum value；And second threshold is updated with the optimum value of second threshold.

According to the method for the 4th of the application first aspect the setting threshold value, the 5th according to the application first aspect is provided The method of threshold value is set, wherein a storage unit has one of third data mode and the 4th data mode more than described second Storage unit, third data mode and the 4th data mode are that adjacent shape is distributed by the read-out voltage that second threshold is distinguished State.

According to one of the method for the first to the 5th of the application first aspect the setting threshold value, provide according to the application first The method of 6th setting threshold value of aspect, wherein the optimum value for obtaining first threshold includes: multiple selectable value with first threshold Read multiple pages in the first wordline；Calculate multiple bit error rates of a storage unit more than first；And minimum ratio will be obtained The selectable value of the first threshold of special error rate, the optimum value as first threshold.

According to one of the method for the first to the 6th of the application first aspect the setting threshold value, provide according to the application first The method of 7th setting threshold value of aspect, wherein the optimum value for obtaining first threshold includes: multiple selectable value with first threshold Read multiple pages in the first wordline；Calculate the multiple of the bit for belonging to the multiple page first page of a storage unit more than first Bit error rate；Wherein, the first page is in the first data mode and the second data mode corresponding to changed bit Page；And the selectable value of the first threshold of lowest bit error rate will be obtained, the optimum value as first threshold.

According to one of the method for the first to the 7th of the application first aspect the setting threshold value, provide according to the application first The method of 8th setting threshold value of aspect, wherein multiple pages in first wordline are written into specified data；And pass through The initial data of the specified data and reading that compare write-in obtains bit error rate.

According to one of the method for the first to the 7th of the application first aspect the setting threshold value, provide according to the application first The method of 9th setting threshold value of aspect, wherein being obtained by comparing the initial data read with to initial data progress error correction To data obtain bit error rate.

According to a second aspect of the present application, a kind of device that threshold value is set is provided, comprising: read module, for reading Multiple pages in first wordline；Data mode identification module, for determining the data mode of multiple storage units in the first wordline； Storage unit identification module obtains related to first threshold for the data mode according to multiple storage units in the first wordline More than first a storage units；Optimal threshold obtains module, for the bit error rate according to more than first a storage units, obtains The optimum value of first threshold；And threshold value update module, for updating first threshold with the optimum value of first threshold.

According to the application third aspect, the method according to the first of the application third aspect the setting threshold value is provided, comprising: Read multiple pages in the first wordline；Determine the data mode of multiple storage units in the first wordline；Quilt according to storage unit The adjustment direction value of first data mode of write-in and the second data mode read identification first threshold and first threshold；It is tired The adjustment direction value for counting the first threshold identified from the multiple storage unit, obtains the adjusted value of first threshold；And with The adjusted value of one threshold value updates first threshold.

According to the method for the first of the application third aspect the setting threshold value, second according to the application third aspect is provided The method of threshold value is set, further includes: the third data mode being written into according to storage unit and the 4th data mode read Identify the adjustment direction value of second threshold and second threshold；The tune of the accumulative second threshold identified from the multiple storage unit Whole direction value obtains the adjusted value of second threshold；And second threshold is updated with the adjusted value of second threshold.

The method of threshold value is set according to the first or second of the application third aspect, is provided according to the application third aspect Third setting threshold value method, wherein when the first data mode and the second data mode are that read-out voltage is distributed adjacent state When, determine that first threshold is to discriminate between the threshold value of the first data mode and the second data mode and the adjustment direction of first threshold The direction in voltage's distribiuting region of the value instruction from the voltage's distribiuting region of the first data mode to the second data mode.

The method of threshold value is set according to the first or second of the application third aspect, is provided according to the application third aspect The 4th setting threshold value method, wherein when the first storage unit the first data mode and the second data mode be threshold voltage When being distributed identical state, first storage unit does not influence the adjusted value of the first threshold.

The method of threshold value is set according to the first or second of the application third aspect, is provided according to the application third aspect The 5th setting threshold value method, wherein when the first storage unit the first data mode and the second data mode be read-out voltage When being distributed not identical and non-conterminous state, first storage unit does not influence the adjusted value of the first threshold.

According to the method for the second of the application third aspect the setting threshold value, the 6th according to the application third aspect is provided The method of threshold value is set, wherein when third data mode and the 4th data mode are that read-out voltage is distributed adjacent state, really Determine second threshold and is to discriminate between the threshold value of third data mode and the 4th data mode and the adjustment direction value instruction of second threshold From the voltage's distribiuting region of third data mode to the direction in the voltage's distribiuting region of the 4th data mode.

According to one of the method for the first to the 6th of the application third aspect the setting threshold value, provide according to the application third The method of 7th setting threshold value of aspect, wherein being incremented by first threshold if the adjusted value of first threshold is greater than the first reference value To update first threshold；If the adjusted value of first threshold makes first threshold successively decrease less than the second reference value to update first Threshold value.

According to one of the method for the 7th of the application third aspect the setting threshold value, provide according to the application third aspect The method of 8th setting threshold value, further includes: read multiple pages in the first wordline；Determine multiple storage units in the first wordline Data mode；According to storage unit the first data mode being written into and read the second data mode identification first threshold with And the adjustment direction value of first threshold；The adjustment direction value of the accumulative first threshold identified from the multiple storage unit, obtains The adjusted value of first threshold；And first threshold is updated with the adjusted value of first threshold.

According to one of the method for the first to the 8th of the application third aspect the setting threshold value, provide according to the application third The method of 9th setting threshold value of aspect, wherein if the adjusted value of first threshold between the first reference value and the second reference value it Between, record first threshold.

According to one of the method for the first to the 9th of the application third aspect the setting threshold value, provide according to the application third The method of tenth setting threshold value of aspect, wherein multiple pages in first wordline are written into specified data.

According to one of the method for the first to the 9th of the application third aspect the setting threshold value, provide according to the application third The method of 11st setting threshold value of aspect wherein carries out wrong school to from the data of multiple pages of readings in first wordline Positive decoding obtains the second data mode.

According to one of the method for the first to the tenth of the application third aspect the setting threshold value, provide according to the application third The method of 12nd setting threshold value of aspect, further includes: in response to data read command, read with updated first threshold same First wordline belongs to the page of same logical units or tube core.

According to the fourth aspect of the application, a kind of device that threshold value is set is provided, comprising: read module, for reading Multiple pages in first wordline；Data mode identification module, for determining the data mode of multiple storage units in the first wordline； Adjustment direction value computing module, the second data mode for the first data mode being written into and reading according to storage unit Identify the adjustment direction value of first threshold and first threshold；Adjustment calculation module, for accumulative single from the multiple storage The adjustment direction value of the first threshold of member identification, obtains the adjusted value of first threshold；And threshold value update module, it is used for first The adjusted value of threshold value updates first threshold.

According to the 5th of the application the aspect, a kind of solid storage device is provided, including, controller and non-volatile memory Device；Processor in the controller executes the setting such as according to the application first aspect and second aspect by operation program Any one of the method for threshold value.

According to the 6th of the application the aspect, the method for the first tracking threshold value according to the 6th aspect of the application, packet are provided It includes: reading the first data using the first value of threshold value；The second data are read using the second value of threshold value；It is determined according to the second data The adjustment direction of threshold value；According to the adjustment amplitude of the first data threshold value；And the adjustment direction according to identified threshold value Threshold value is updated with adjustment amplitude.

According to the method for the first tracking threshold value of the 6th of the application aspect, the according to the 6th aspect of the application is provided The method of two tracking threshold values, wherein by making the first value increase of threshold value be specified to obtain the second value of threshold value.

According to the method for the first or second tracking threshold value of the 6th of the application the aspect, provide according to the 6th side of the application The method of the third tracking threshold value in face, wherein reading the first data and the second data from identical Physical Page.

According to the method for the first or second tracking threshold value of the 6th of the application the aspect, provide according to the 6th side of the application The method of the 4th tracking threshold value in face, wherein the first data are to read from the first Physical Page, and the second data are from the second object Reason page is read and the first Physical Page and the second Physical Page are all associated with the threshold value.

According to one of the method for first to fourth tracking threshold value of the 6th of the application aspect, provide according to the application the The method of 5th tracking threshold value of six aspects, wherein according to the number of error bits of the second data and the error bit of the first data Number, the direction that will reduce between the first value and second value number of error bits on number axis, the adjustment direction as threshold value.

According to one of the method for the first to the 5th tracking threshold value of the 6th of the application aspect, provide according to the application the The method of 6th tracking threshold value of six aspects, wherein the adjustment amplitude of threshold value is positively correlated with the number of error bits of the first data.

According to one of the method for the first to the 6th tracking threshold value of the 6th of the application aspect, provide according to the application the The method of 7th tracking threshold value of six aspects, wherein if the number of error bits of the first data is less than entangling for the error-correcting code used The adjustment amplitude of threshold value is determined as the first value by wrong ability；And if the number of error bits of the first data is not less than the mistake used The accidentally error correcting capability of correcting code, is determined as second value for the adjustment amplitude of threshold value, wherein the first value is less than second value.

According to the method for the 7th tracking threshold value of the 6th of the application aspect, the according to the 6th aspect of the application is provided The method of eight tracking threshold values, wherein the first value is directly proportional with the number of error bits of the first data；And second value is designated value.

According to one of the method for the first to the 6th tracking threshold value of the 6th of the application aspect, provide according to the application the The method of 9th tracking threshold value of six aspects, wherein if the number of error bits of the first data is less than mistake caused by random electrical noise The adjustment amplitude of threshold value is determined as the first value by bit number；And if the number of error bits of the first data with electromechanics not less than making an uproar The adjustment amplitude of threshold value is determined as second value by number of error bits caused by sound, wherein the first value is less than second value.

According to one of the method for the first to the 9th tracking threshold value of the 6th of the application aspect, provide according to the application the The method of tenth tracking threshold value of six aspects, further includes: obtain threshold value according to the adjustment direction of threshold value and the adjustment amplitude of threshold value Adjusted value；Threshold value is updated with the accumulative result of multiple adjusted values of threshold value.

According to the method for the tenth tracking threshold value of the 6th of the application aspect, the according to the 6th aspect of the application is provided The method of 11 tracking threshold values, wherein reading the first data by the first value that threshold value is used for multiple times, and is used for multiple times threshold value Second value read the second data, obtain multiple adjusted values of threshold value.

According to one of the method for the first to the 11st tracking threshold value of the 6th of the application the aspect, provide according to the application The method of 12nd tracking threshold value of the 6th aspect, further includes: read third data using the third value of threshold value, wherein second value It is located at the two sides of the first value on number axis with third value.

According to the method for the 12nd tracking threshold value of the 6th of the application the aspect, provide according to the 6th aspect of the application The method of 13rd tracking threshold value, wherein will be counted according to the number of error bits of the second data and the number of error bits of third data The direction for reducing between second value and third value number of error bits on axis, the adjustment direction as threshold value.

According to the 6th of the application the aspect, the method for the 14th tracking threshold value according to the 6th aspect of the application is provided, It include: to read the first data using the first value of threshold value；According to the adjustment amplitude of the first data threshold value；And according to really The adjustment direction and adjustment amplitude of fixed threshold value update threshold value.

According to the 7th of the application the aspect, the method for the first setting threshold value according to the 7th aspect of the application, packet are provided It includes: reading multiple pages in the first wordline；Determine the data mode of multiple storage units in the first wordline；According in the first wordline The data mode of multiple storage units obtains more than first a storage unit relevant to first threshold；Use the of first threshold One value reads the first data from more than first a storage units；It is read using the second value of first threshold from more than first a storage units Second data；The adjustment direction of first threshold is determined according to the second data；The adjustment width of first threshold is determined according to the first data Degree；And first threshold is updated according to the adjustment direction and adjustment amplitude of identified first threshold.

According to the method for the first setting threshold value of the 7th of the application aspect, the according to the 7th aspect of the application is provided The method of two setting threshold values, further includes: read with updated first threshold and belong to same logical units or pipe with the first wordline The page of core.

According to the method for the first or second setting threshold value of the 7th of the application the aspect, provide according to the 7th side of the application The method of the third setting threshold value in face, wherein a storage unit more than described first is that have the first data mode and the second data shape The storage unit of one of state, the first data mode are that the read-out voltage distinguished by first threshold is distributed phase with the second data mode Adjacent state.

According to the first of the 7th of the application aspect to third setting threshold value one of method, provide according to the application the The method of 4th setting threshold value of seven aspects, further includes: read third data using the third value of first threshold, wherein second value It is located at the two sides of the first value on number axis with third value.

According to the method for the 4th setting threshold value of the 7th of the application aspect, the according to the 7th aspect of the application is provided The method of five setting threshold values, further includes: according to the number of error bits of the second data and the number of error bits of third data, by number axis The direction for reducing number of error bits between upper second value and third value, the adjustment direction as first threshold.

According to one of the method for the first to the 5th setting threshold value of the 7th of the application aspect, provide according to the application the The 6th in terms of seven is arranged the method for threshold value, wherein number of error bits positive of the adjustment amplitude of first threshold with the first data It closes.

According to one of the method for the first to the 6th setting threshold value of the 7th of the application aspect, provide according to the application the The method of 7th setting threshold value of seven aspects, further includes: obtained according to the adjustment direction of first threshold and the adjustment amplitude of threshold value The adjusted value of first threshold；First threshold is updated with the accumulative result of multiple adjusted values of first threshold.

According to the method for the 7th setting threshold value of the 7th of the application aspect, the according to the 7th aspect of the application is provided The method of eight setting threshold values wherein read the first data by the first value that first threshold is used for multiple times, and is used for multiple times the The second value of one threshold value reads the second data, obtains multiple adjusted values of first threshold.

According to the method for the 8th setting threshold value of the 7th of the application aspect, the according to the 7th aspect of the application is provided The method of nine setting threshold values, wherein use the adjusted value of first threshold and the exact value of first threshold and round numbers result as Updated first threshold；Wherein the exact value of first threshold is by the adjusted value of first threshold and the previous exact value of first threshold Addition obtains.

According to the 7th of the application the aspect, the method for the tenth setting threshold value according to the 7th aspect of the application, packet are provided It includes: reading multiple pages in the first wordline；Determine the data mode of multiple storage units in the first wordline；According in the first wordline The data mode of multiple storage units obtains more than first a storage unit relevant to first threshold；Use the of first threshold One value reads the first data from more than first a storage units；The adjustment amplitude of first threshold is determined according to the first data；And root First threshold is updated according to the adjustment direction and adjustment amplitude of identified first threshold.

According to the eighth aspect of the application, the device according to the first of the application eighth aspect the setting threshold value, packet are provided It includes: the first data acquisition module, for using the first value of threshold value to read the first data；Second data acquisition module, for making The second data are read with the second value of threshold value；Adjustment direction determining module, for the adjustment side according to the second data threshold value To；Amplitude determination modules are adjusted, for the adjustment amplitude according to the first data threshold value；And threshold value update module, it is used for Threshold value is updated according to the adjustment direction of identified threshold value and adjustment amplitude.

According to the 9th of the application the aspect, the device of the first setting threshold value according to the 9th aspect of the application, packet are provided It includes: wordline read module, for reading multiple pages in the first wordline；State of memory cells determining module, for determining first The data mode of multiple storage units in wordline；Storage unit obtains module, for according to multiple storage units in the first wordline Data mode, obtain relevant to first threshold more than first a storage unit；First data acquisition module, for using first First value of threshold value reads the first data from more than first a storage units；Second data acquisition module, for using first threshold Second value read the second data from more than first a storage units；Adjustment direction determining module, for being determined according to the second data The adjustment direction of first threshold；Amplitude determination modules are adjusted, for determining the adjustment amplitude of first threshold according to the first data；With And threshold value update module, for updating first threshold according to the adjustment direction and adjustment amplitude of identified first threshold.

According to the tenth of the application the aspect, the solid-state storage of the first setting threshold value according to the tenth aspect of the application is provided Equipment, comprising: including controller and nonvolatile storage；Processor in the controller executes root by operation program According to one of the method for the setting threshold value of the 6th or the 7th aspect of the application.

Detailed description of the invention

When being read together with attached drawing, by reference to the detailed description below to illustrative embodiment, will be best understood The application and preferred use pattern and its further objects and advantages, wherein attached drawing include:

Fig. 1 illustrates the structure of the flash memory storage medium of the prior art；

Fig. 2 is the read-out voltage scatter chart of storage unit；

Fig. 3 A is the read-out voltage scatter chart of the storage unit of another example；

Fig. 3 B illustrates the corresponding relationship of the state of storage unit and the bit of storage；

Fig. 3 C illustrates the corresponding relationship of 3 bits and Physical Page of storage unit storage；

Fig. 4 illustrates the corresponding relationship of the state of the threshold value and storage unit according to the embodiment of the present application；

Fig. 5 illustrates the flow chart of the setting threshold value according to the embodiment of the present application；

Fig. 6 A illustrates the flow chart of the setting threshold value according to the another embodiment of the application；

Illustrated in Fig. 6 B to storage unit be written into state with read the relevant threshold value of the combination of state；

Fig. 7 illustrates the relationship of threshold voltage and number of error bits；

Fig. 8 illustrates the flow chart according to the application still searching threshold of another embodiment；

Fig. 9 is the flow chart according to the application still searching threshold of another embodiment；

Figure 10 is the flow chart according to the application further embodiment；And

Figure 11 is the block diagram of solid storage device.

Specific embodiment

Fig. 2 is the read-out voltage scatter chart of storage unit.After storage unit is programmed, according to programmed value, Charge is stored in storage unit.When reading storage unit, different readings can be obtained from the storage unit for storing different charges Voltage.Referring to Fig. 2, bell line L0 is the read-out voltage distribution of the storage unit with one state, and bell line L1 is that have " 0 " The read-out voltage of the storage unit of state is distributed.When using threshold voltage vt 2, there is " 1 " shape on 2 right side of threshold voltage vt The storage unit of state is misread and becomes error bit.Similarly, when using threshold voltage vt 1, in 1 left side of threshold voltage vt The storage unit with " 0 " state misread and become error bit.Threshold voltage vt 3 is another optionally in from storage The threshold voltage of unit reading data.

By comparing the quantity of the corresponding error bit of multiple threshold voltages, the smallest threshold value of the quantity of error bit is selected Voltage is as optimal threshold voltage.Alternatively, from read-out voltage distribution in, determine optimal threshold voltage (for example, selection Vt so that Bell line L0 is minimum in the sum of the area of Vt left part in the area of Vt right part and bell line L1).

Fig. 3 A is the read-out voltage scatter chart of the storage unit of another example.In the example of Fig. 3 A, storage unit Type be TLC (Triple Level Cell, three value storage units).The read-out voltage of TLC storage unit is grouped into representative 8 kinds of different states, one of corresponding 3 bit combinations of every kind of state.By " L0 " indicated to " L7 " 8 kinds of storage unit it is different State, " L0 " is the state after storage unit is wiped free of, and " L7 " is the state after storage unit is sufficiently programmed.Referring to Fig. 3, The read-out voltage of from " L0 " to " L7 ", storage unit are monotonically changed.

The state of storage unit is distinguished with multiple threshold values.With continued reference to Fig. 3 A, with threshold value TH1 distinguish state " L3 " with "L4"；State " L1 " and " L2 " is distinguished with threshold value TH2；State " L5 " and " L6 " is distinguished with threshold value TH3；Shape is distinguished with threshold value TH4 State " L0 " and " L1 "；State " L2 " and " L3 " is distinguished with threshold value TH5；State " L4 " and " L5 " is distinguished with threshold value TH6；Use threshold value TH7 distinguishes state " L6 " and " L7 ".As an example, register is provided for each threshold value to store the value of threshold value.And pass through ratio Compare the value of threshold value and the read-out voltage of storage unit compared with device, carrys out recognition memory cell state in which.

Coding is provided for each state of storage unit, coding represents three bits that TLC storage unit is stored.Fig. 3 B Illustrate the corresponding relationship of the state of storage unit and the bit of storage.As an example, B, state " L0 " represent three ratios referring to Fig. 3 Special " 111 ", state " L1 " represent three bits " 011 ".In Fig. 3 B, make two states of arbitrary neighborhood, two three corresponding ratios Paricular value, there is only a bit changes, and in addition dibit is identical.

Fig. 3 C illustrates the corresponding relationship of 3 bits and Physical Page of storage unit storage.To promote physics access to web page Concurrency, 3 bits stored in each storage unit are belonging respectively to different Physical Page.For example, storage unit is deposited in Fig. 3 C Stored up 3 bits " 101 ", by sequence from left to right be referred to as MSB (most significant bit, Most Significant Bit), CSB (intermediate significance bit, Central Significant Bit) and LSB (least significant bit, Least Significant Bit).The Physical Page being made of the MSB of multiple storage units is known as MSB pages, the object that will be made of the CSB of multiple storage units Reason page is known as CSB pages, and the Physical Page being made of the LSB of multiple storage units is known as LSB page.

3 bits of TLC storage unit storage have different reliabilitys.Referring back to Fig. 3 A, recognition memory cell LSB, it is only necessary to by the read-out voltage of storage unit compared with threshold value TH1, thus in 3 bits of storage, LSB has preferable Reliability.The CSB for wanting recognition memory cell is needed the read-out voltage of storage unit compared with threshold value TH2 and/or TH3.And The MSB for wanting recognition memory cell needs to compare the read-out voltage of storage unit and threshold value TH4, TH5, TH6 and/or TH7 Compared with.

To change the threshold value of storage unit, the influence to the reading result from storage unit is dependent on storage unit State.For example, by changing the value of threshold value TH1, will hardly influence storage unit if storage unit is in " L7 " state Read result.As another example, change the value of threshold value TH6, when reading data, the non-storage in " L4 " and " L5 " state The reading result of unit is hardly affected.

It, can not be by changing the value of the threshold value if the reading result of storage unit is influenced very little by the variation of certain threshold value To find the optimum value for the threshold value for being suitble to the storage unit.Generally, it is scrambled to the data that Physical Page is written, so that write-in The data of Physical Page are random number sequences.However, for MLC (Multi Level Cell) storage unit or TLC storage unit, Due to wherein storing the data from multiple pages, traditional scrambling algorithms are not that can ensure to provide multiple storage lists of Physical Page The state of member is random distribution.

Fig. 4 illustrates the corresponding relationship of the state of the threshold value and storage unit according to the embodiment of the present application.The wordline of flash memory Including storage unit, these storage units provide the data for constituting multiple Physical Page.

Fig. 4 is illustrated, and distinguishes state " L3 " and " L4 " with threshold value TH1, is distinguished state " L1 " and " L2 " with threshold value TH2, is used Threshold value TH3 distinguishes state " L5 " and " L6 ", distinguishes state " L0 " and " L1 " with threshold value TH4, with threshold value TH5 distinguish state " L2 " with " L3 " is distinguished state " L4 " and " L5 " with threshold value TH6, and distinguishes state " L6 " and " L7 " with threshold value TH7.

For the storage unit in a wordline, gather wherein the storage unit in " L3 " and " L4 " state is constituted { C10, C11, C12 ..., C1m } indicates the set with the 1st number " 1 " of lower target of set element and has same sequence number The threshold value TH1 of " 1 " is related, wherein set element C10, C11, C12 ..., and each instruction of C1m is in " L3 " and " L4 " state One of storage unit.Gather { C10, C11, C12 ..., C1m } it is related with threshold value TH1, be because change threshold value TH1 value, understand with Larger probability influences the judgement to the state in " L3 " and the storage unit of " L4 " state, for example, will be in " L3 " state Storage unit is identified as in " L4 " state, or the storage unit in " L4 " state is identified as in " L3 " state.

The relevant bit error rate of same threshold value is also illustrated in Fig. 4.As an example, it for each value of threshold value TH1, deposits The reading result of storage unit set { C10, C11, C12 ..., C1m } with bit error rate e1 a value (be expressed as e10, E11, e12 ...), the bit error rate is indicated with the 1st number " 1 " of target under bit error rate e and there is same sequence number " 1 " Threshold value TH1 it is related.

By multiple values of threshold value TH1, corresponding multiple bit error rates (being expressed as e10, e11, e12 ...) are obtained. And the value for the threshold value TH1 for being worth the smallest bit error rate is obtained, it is the optimum value of threshold value TH1.

Similarly, threshold value TH2 is responded and is read from the storage unit in " L1 " and " L2 " state referring to Fig. 4 Result bit error rate e2.Storage unit in " L1 " and " L2 " state constitute set C20, C21, C22 ..., C1n}.For multiple values of threshold value TH2, the result read from the storage unit in " L1 " and " L2 " state obtains multiple Bit error rate (it is expressed as e20, e21, e22 ...).And the value for the threshold value TH2 for being worth the smallest bit error rate is obtained, it is The optimum value of threshold value TH2.

It should be understood that correspond to the storage unit set of each threshold value, such as storage unit set C10, C11, C12 ..., C1m } with { C20, C21, C22 ..., C1n }, the number of memory cells for being included can be different.

It is then desired to identify the state of the storage unit of wordline, and the bit according to the storage unit with designated state Error rate, to identify the optimum value of the relevant threshold value of same designated state.And it is read using the optimum value of threshold value from storage unit Data, to reduce the bit error rate for reading data.Optionally, multiple threshold values of recognition memory cell are (for example, deposit TLC Storage unit has 7 threshold values) each of optimum value.And data are read from storage unit using the optimum value of all threshold values, To reduce the bit error rate for reading data.Or the Physical Page of specified type is being read (for example, MSB pages, CSB pages or LBS Page) when, data are read from storage unit using the optimum value of threshold value relevant to the Physical Page of specified type, are read to reduce The bit error rate of data.For example, A, relevant threshold value are TH1 referring to Fig. 3, most using threshold value TH1 when reading LSB page Good value to read data from storage unit.As CSB to be read, dependent thresholds are TH2 and TH3, use threshold value TH2 and threshold value The optimum value of TH3 to read data from storage unit.As MSB to be read, dependent thresholds TH4, TH5, TH6 and TH7 are used The optimum value of threshold value TH4, TH5, TH6 and TH7 to read data from storage unit.

Further, if the homogeneity of multiple wordline of flash media is bad, also multiple wordline are grouped, are every group of wordline The optimum value of used one or more threshold values when reading data is set.

Fig. 5 illustrates the flow chart of the setting threshold value according to the embodiment of the present application.For threshold value is arranged, read more in wordline A Physical Page (510), and according to the state (520) for reading the storage unit in result acquisition wordline.For depositing for M LC type Two bits (MSB and LSB) of storage unit, each storage unit storage respectively correspond two Physical Page (MSB pages and LSB page). Multiple MLC memory cells in one wordline provide at least two Physical Page.Read the two Physical Page, and by two physics The corresponding bit combination of page, to obtain the state of the storage unit in wordline.For example, from (including 4 storage units) wordline MSB pages reading data be " 1010 ", and from LSB page read data be " 1100 ", combine the correspondence ratio of two Physical Page Spy, the state for obtaining 4 storage units (C1, C2, C3 and C4) of wordline is " 11 ", " 01 ", " 10 " and " 00 " respectively.For Three bits (MSB, CSB and LS B) of the storage unit of TLC type, each storage unit storage respectively correspond three Physical Page (MSB pages, CSB pages and LSB page).Multiple TLC storage units in one wordline provide at least three Physical Page.Read this three A Physical Page, and combine the corresponding bit of three Physical Page, to obtain the state of the storage unit in wordline.For example, from (packet Including 4 storage units) data that read of the MS B page of wordline are " 1010 ", the data from CSB page reading are " 0011 ", and from LSB page read data be " 1100 ", combine the corresponding bit of three Physical Page, obtain wordline 4 storage units (C1, C2, C3 and C4) state be " 101 ", " 001 ", " 110 " and " 010 " respectively.

Optionally, it is the state for obtaining storage unit, wrong school is carried out to the data of the Physical Page read from storage unit Positive decoding, to obtain correct data in Physical Page.Generally, the data volume that Physical Page is included be 4KB, 8KB or 16KB, because And the quantity of the storage unit in a wordline is huge.For TLC flash memory, possible state has 8 kinds.An and wordline On a large amount of storage unit in, the quantity of storage unit with every kind of state can be more.

In another example, in order to avoid under some cases, in the storage unit in a wordline, state is unevenly distributed Even, the quantity of the storage unit with certain states is very few；Known data can be written to multiple Physical Page of wordline, and make word The quantity of storage unit on line with every kind of state all reaches higher level.

In order to obtain the optimum value of a threshold value (for example, TH1), identification has and threshold value from the storage unit in wordline Multiple storage units (530) of relevant state.State relevant to threshold value is the reading for the storage unit distinguished by threshold value Two adjacent states of voltage's distribiuting.Be shown in FIG. 4 relevant to each threshold value (TH1, TH2 ..., TH7) state (L3/L4, L1/L2,…,L6/L7).Since step 520 obtains the state of each storage unit in wordline, in step 530, for threshold value TH1 identifies the storage unit with " L3 " and " L4 " state from multiple storage units in wordline.For example, referring to Fig. 4, Storage unit in storage unit set { C10, C11, C12 ... C1m } is all the storage unit with " L3 " and " L4 " state. According to an embodiment of the present application, for obtain threshold value optimum value, only in accordance with the storage unit with the relevant state of threshold value Bit error rate, a variety of bit-errors reasons so as to avoid the storage unit of other states are dry to statistical result bring It disturbs.

When threshold value takes different value, the multiple bit error rates for the storage unit set that step 530 is identified obtain statistics The value of the threshold value of lowest bit error rate, for the current optimum value of the threshold value (540).For example, in threshold value (for example, TH1) In value range, the different value of threshold value (for example, TH1) is set.For each value of threshold value (for example, TH1), read from wordline Physical Page where storage unit relevant to threshold value out, and identify relevant to threshold value multiple storage units (for example, { C10, C11, C12 ... C1m }) each of state.And then each value for threshold value (TH1) is obtained, it is relevant to threshold value The bit error rate of multiple storage units (for example, { C10, C11, C12 ... C1m }).And it obtains being worth the smallest bit error rate Threshold value (for example, TH1) value, be the optimum value of threshold value.

In one example, storage unit is TLC storage unit, and 3 bit datas are stored in each storage unit.To calculate The bit error rate of storage unit only counts threshold value (for example, TH1) in multiple storage units relevant to threshold value and searched The error rate of relevant bit (A referring to Fig. 3, bit relevant to threshold value TH1 is LSB).Similarly, referring also to Fig. 3 A, with threshold The relevant bit of value TH2 or TH3 is CSB, and bit relevant to threshold value TH4, TH5, TH6 or TH7 is MSB.

In another example, it is the bit error rate of calculating storaging unit, counts storage unit relevant to threshold value The bit error rate of the total of all bits.

In still another example, it is contemplated that the natural loss of the charge stored in the storage unit by programming belongs to Property, change caused by the read-out voltage of storage unit and the different values of unidirectional search threshold value according to charge loss.For example, ginseng See Fig. 3 A, with the charge loss in storage unit, the read-out voltage of storage unit is mobile to the left side of read-out voltage axis.Thus For the best value of searching threshold, (charge loss of memory cell storage makes to deposit for search from right to left on read-out voltage axis The direction of the read-out voltage variation of storage unit), search process can be simplified, and improve search efficiency.

The optimum value of obtained threshold value is recorded, and reads other Physical Page of NVM chip using the optimum value of threshold value (550)。

It is to be appreciated that the optimum value of threshold value is obtained to step 540 by step 510.And step 550 is using being obtained Threshold value optimum value read NVM chip.Step 510 arrives step 540, need not occur simultaneously with step 550 or occur together, It need not implement during same processing.

Optionally, by executing step 530 and step 540 repeatedly, to obtain the optimum value of each of multiple threshold values.Example Such as, in step 530, storage unit set { C20, C21, C22 ..., C2n } relevant to threshold value TH2 is obtained.It, will in step 540 Threshold value TH2 is set as the first value, reads from NVM chip multiple including storage unit set { C20, C21, C22 ..., C2n } Physical Page, and identify the state of each storage unit in storage unit set { C20, C21, C22 ..., C2n }, and depositing The bit error rate of storage unit set { C20, C21, C22 ..., C2n }.And in step 540, also change the value of threshold value TH2, And count the bit error rate of storage unit set { C20, C21, C22 ..., C2n }.In the optimum value for obtaining threshold value TH2 Afterwards, step 530 and step 540 are repeated, to identify the optimum value of such as threshold value TH3.

Fig. 6 A illustrates the flow chart of the setting threshold value according to the another embodiment of the application.

For threshold value is arranged, multiple Physical Page (610) in wordline are read, and according to the storage read in result acquisition wordline The state (620) of unit.For the storage unit of MLC type, two bits (MSB and LSB) point of each storage unit storage It Dui Ying not two Physical Page (MSB pages and LSB page).Multiple MLC memory cells in one wordline provide at least two physics Page.The two Physical Page are read, and combine the corresponding bit of two Physical Page, to obtain the shape of the storage unit in wordline State.

Optionally, it is the state for obtaining storage unit, wrong school is carried out to the data of the Physical Page read from storage unit Positive decoding, to obtain correct data in Physical Page.Generally, the data volume that Physical Page is included be 4K B, 8KB or 16KB, Thus the quantity of the storage unit in a wordline is huge.For TLC flash memory, possible state has 8 kinds.An and word In a large amount of storage unit on line, the quantity of the storage unit with every kind of state can be more.

In the embodiment of Fig. 6 A, the state that storage unit is written into and the state read from storage unit are obtained.? In one example, given data is written to the corresponding multiple Physical Page of storage unit, to can get storage according to given data The state that unit is written into, and data are read according to from the corresponding multiple Physical Page of storage unit, it can get from storage unit The state of reading.In another example, error correction is done to the data read from the corresponding multiple Physical Page of storage unit to translate Code obtains the state that storage unit is written into according to error correction decoding result；And according to from the corresponding multiple objects of storage unit The data that page is read are managed, the state read from storage unit is obtained.

Determine that storage unit is written into the relevant threshold value (630) of both state and the state that reads from storage unit.When depositing Storage unit mistake when being written into the state difference of state and reading, can determine that phase with reading state according to state is written into mistake The threshold value of pass.

Referring to Fig. 6 B, illustrated in Fig. 6 B to storage unit be written into state with read the relevant threshold of the combination of state Value.Storage unit be written into state it is adjacent with reading state when, it is meant that there are mistakes for storage unit, and the mistake with should Relevant threshold value is related.By adjusting threshold value, help to reduce or eliminate that be written into state relevant to the reading state with this Mistake.

For example, when the state of being written into is " L0 " and to read state be " L1 ", it is related to the state that is written into and reading state Threshold value be TH4.Referring also to Fig. 3 A, state relevant to threshold value is the read-out voltage point for the storage unit distinguished by threshold value Two adjacent states of cloth.With with neighboring voltage distribution two states the relevant threshold value of combination, be for distinguish this two The threshold value of the voltage's distribiuting of a state.Referring back to Fig. 6 B, if it is " L3 " that storage unit, which is written into state, and read from storage unit State out is " L4 ", then dependent thresholds are " TH1 ".

With continued reference to Fig. 6 B, if the state that is written into of storage unit and the state read from storage unit it is non-conterminous (including The state being written into from state that storage unit is read is identical or Fig. 6 B in the situation as indicated by " other "), then do not consider Influence of the storage unit to threshold value.

For considered each storage unit, determine and adjustment direction value relevant with the relevant threshold value of the storage unit (640).Referring again to Fig. 6 B, for example, when the state of being written into is " L0 " and to read state be " L1 ", and it is written into state and reading The relevant threshold value that does well is TH4 and corresponding " adjustment direction value " is "+1 ", it is meant that the adjustment direction of threshold value is to the right Mobile (increasing the value of threshold value, help to reduce or eliminate the state of being written into and read the difference of state).It is given in Fig. 6 B For the storage unit of TLC type, storage unit be written into state it is adjacent with reading state when, be written into state and read shape The corresponding threshold value of the combination of state and adjustment direction value.

Optionally, when the state and reading state that storage unit is written into are non-conterminous, do not consider the storage unit to threshold value Influence.Still optionally, when storage unit is written into state and reading state are non-conterminous, by the storage unit to one, The influence (influence to adjustment direction value) of multiple or each threshold value is set as 0.

For each storage unit, add up adjustment direction value (650) relevant to threshold value.For example, the first storage unit The state of being written into is " L0 ", and reading state is " L1 ", and threshold value relevant to the storage unit is " TH4 ", relevant adjustment direction Value is "+1 ".The state that is written into of second storage unit is " L1 ", and reading state is " L0 ", threshold value relevant to the storage unit It is " TH4 ", relevant adjustment direction value is " -1 ".The state that is written into of third storage unit is " L1 ", and reading state is " L0 ", Threshold value relevant to the storage unit is " TH4 ", and relevant adjustment direction value is " -1 ".4th storage unit is written into state It is " L4 " that reading state is " L5 ", threshold value relevant to the storage unit is " TH6 ", and relevant adjustment direction value is "+1 ".That , add up to be to from the adjustment side that the first, second, third storage unit obtains above to the relevant adjustment direction value of threshold value TH4 It sums to value, obtains " -1 ".Accumulative is from the adjustment that the 4th storage unit obtains above to the relevant adjustment direction value of threshold value TH6 Direction value obtains "+1 ".

Threshold value relevant to its state and adjustment are obtained to each storage unit for multiple storage units in wordline Direction value, and its adjustment direction value is added up to each threshold value, the sum of the adjustment direction value of each threshold value is obtained, threshold value is used to Adjustment direction or threshold value adjusted value (660).

In one example, the value of the adjusted value of threshold value is -1,0 ,+1.Accumulative adjustment direction value is mapped to threshold value One of three kinds of values of adjusted value.For example, if the accumulative adjustment direction value of threshold value TH1 is greater than 5, corresponding threshold value TH1's Adjusted value is+1；If the accumulative adjustment direction value of threshold value TH1 is less than -5, the adjusted value of corresponding threshold value TH1 is -1；If threshold value Between -5 to+5, the adjusted value of corresponding threshold value TH1 is the accumulative adjustment direction value of TH1.Obvious fields technology people It is citing that member, which is appreciated that "+5 " and " -5 " only, can be realized using other values from accumulative adjustment direction value to threshold value Adjusted value mapping.And there are many mapping modes, and the adjustment direction value added up is mapped as to the three of the adjusted value of threshold value One of kind value.

When the adjusted value of threshold value is+1, it is meant that the value of the threshold value is increased a unit.Similar, adjusting thresholds value When being -1, it is meant that the value of the threshold value is reduced by a unit.And adjusting thresholds value be 0 when, keep the value of the threshold value constant.

In the embodiment of Fig. 6 A, the adjustment to threshold value is lasting process, can only adjust a such as unit every time. If the adjusted value of threshold value is not 0 (665), it is meant that the adjustment of threshold value may be completed not yet, need further to adjust, thus Return step 610, and repeat the adjustment process of threshold value.

In one example, the threshold value to be adjusted has multiple (for example, 7, referring also to Fig. 3 A), then multiple when what is adjusted When any one adjusted value of threshold value is not 0, all return steps 610, and repeat threshold adjustment.

Optionally, it is adjusted for specified one or more threshold values.In step 665, any the one of specified threshold value When a adjusted value is not 0, return step 610.

Adjusted value to the threshold value of adjustment is all 0, shows to have obtained the optimum value of each threshold value.Record is current each Optimum value (670) of the value of threshold value as threshold value.

Other Physical Page (680) of NVM chip are read using the optimum value of threshold value.

It is to be appreciated that the optimum value of threshold value is obtained to step 670 by step 610.And step 680 is using being obtained Threshold value optimum value read NVM chip.Step 610 arrives step 670, need not occur simultaneously with step 680 or occur together, It need not implement during same processing.

Fig. 7 illustrates the pass of threshold voltage (value of threshold value) Yu number of error bits (BEC, Bit Error Coun t) System.When reading data from the Physical Page for including multiple storage units using different threshold voltages, curve 700 illustrates reading number Number of error bits in changes with the variation of the threshold voltage used.With reference to Fig. 7, horizontal axis instruction is read used in data Threshold voltage, and longitudinal axis instruction reads the number of error bits in data.It is to be appreciated that read data may include from one or Multiple Physical Page read data, data are read from multiple Physical Page of multiple memory blocks, LUN or NVM chip, from the more of Physical Page The part of a storage unit reads data, or reads from the partial memory cell of Physical Page and belong to specified Physical Page type The data of (MSB pages, CSB pages or LSB page).Although being still it is to be appreciated that illustrating single threshold value voltage in Fig. 7 Read data from storage unit, used threshold voltage can have it is multiple, with distinguish in storage unit may storage it is multiple State.

It include point 710,712 and 714 on curve 700 with continued reference to Fig. 7.In three points (710,712 and 714), point 714 have minimum number of error bits, thus, threshold voltage corresponding to point 714 has preferable threshold value value.Foundation Fig. 7, Number of error bits is the function of threshold voltage, has the threshold voltage of minimum or lower number of error bits by searching for, can obtain Obtain best or preferable threshold voltage value.And it can be in the use process to NVM chip not to the search of threshold voltage It is disconnected to carry out, to track the best or preferable threshold voltage variation because of caused by the use of NVM chip.To best or preferable threshold value electricity The tracking of pressure can be realized using the one or more methods for solving univariant search problem.

Facilitate to optimize threshold voltage search process in conjunction with domain knowledge.According to an embodiment of the present application, mistake is utilized Accidentally the error correcting capability of correcting code (ECC, Error Correction Code) carrys out Optimizing Search process.Mistake in reading data When errored bit number is far below the error correcting capability of ECC, less important is become to the searching of best or preferable threshold voltage；And it is reading Number of error bits in data near or above ECC error correcting capability when, need actively to search for best or preferable threshold voltage.

Fig. 8 illustrates the flow chart according to the application still searching threshold of another embodiment.Embodiment shown in Fig. 8 In, data, the corresponding reading number of the different values of recognition threshold are read from storage unit by using the different values of threshold value According to number of error bits carry out the best or preferred values of searching threshold.In NVM chip, the threshold value that can be set has one or more A, according to one of the threshold value that track or adjust, selection will read out the first Physical Page (810) of data.For example, referring to figure 3A, threshold value TH4 correspond to MSB pages, and threshold value TH3 corresponds to CS B page, thus when tracking threshold value TH4, the first Physical Page is MSB Page.In another example threshold value can be arranged for the Physical Page of 3D NVM chip different layers, it is determined according to the threshold value that track or adjust The physical page address range of influence selects Physical Page.

Data (the first data) are read from the first Physical Page using the first value (for example, default value or current value) of threshold value (820).It can recognize the number of error bits of the data read.For example, carrying out error correction decoding to data are read, will be read The correction of data is as a result, and in the presence of wrong amount of bits.Referring also to Fig. 7, the first value of threshold value is the horizontal seat of such as point 710 The indicated threshold value of mark.

The second value of threshold value is obtained according to the first value of threshold value, and reads data (the from the first Physical Page using second value Two data) (830).For example, the first value plus or minus designated value are obtained second value.Referring also to Fig. 7, second value is for example Threshold value indicated by the abscissa of point 712 or point 714.First value can be the value model of such as threshold value at a distance from second value 1% enclosed.In still another example, the natural loss attribute of the charge stored in the storage unit by programming is considered, Change the different values of the second value of selected threshold caused by the read-out voltage of storage unit according to charge loss.As act Example selects second value (714) in the negative direction of threshold voltage axis with the first value (710) of threshold value for origin.

Adjustment direction (840) according to the second data threshold value that the second value using threshold value is read.As an example, Two-value is value indicated by the abscissa of point 712；Since the number of error bits of point 712 is higher than the number of error bits of point 710, meaning Second value than the first value further from the optimum value of threshold value, for the optimum value for obtaining threshold value, to since the first value far from second Direction (Fig. 7, horizontal axis left side) search of value is most worth.And in another example, second value is indicated by the abscissa of point 714 Value；Due to point 714 number of error bits lower than point 710 number of error bits, it is meant that second value is than the first value closer to threshold The optimum value of value is searched for the optimum value for obtaining threshold value to the direction (Fig. 7, horizontal axis left side) from the first value initially towards second value Rope is most worth.For purposes of description, by Fig. 7, the direction of horizontal axis from left to right is known as positive direction, and direction from right to left claims For negative direction.

In alternative embodiments, it is contemplated that the natural loss of the charge stored in the storage unit by programming belongs to Property, a possibility that optimum value of threshold value is mobile to the negative direction of threshold voltage axis at any time, is larger, so as to acquiescently by threshold value Adjustment direction be set as threshold voltage axis negative direction (memory cell storage charge loss make storage unit reading electricity The direction of buckling), in this embodiment, it need not also execute step 830.And optionally, (not omitting) step is executed 830, and the adjustment direction of threshold value is revised using the second data that the second value of threshold value is read.For example, using relative to threshold The number of error bits for the second data that the second value that first value of value is located at the threshold value of the negative direction of threshold voltage axis is read is opposite When the special number of mistake of the first data of the first value reading using threshold value dramatically increases, threshold is set by the adjustment direction of threshold value The positive direction of threshold voltage axis.

According to the adjustment amplitude (850) for the first data threshold value that the first value using threshold value is read.As an example, Referring to Fig. 7, the number of error bits in the first data is higher, it is meant that and the best value of the first value distance threshold is remoter, and first Number of error bits in data is lower, it is meant that the optimum value of the first value distance threshold is closer.Thus, in one example, root According to the adjustment amplitude of the absolute value setting threshold value of the number of error bits of the first data, absolute value is bigger, and the adjustment amplitude of threshold value is got over Greatly, absolute value is smaller, and the adjustment amplitude of threshold value is smaller.As another example, according to the number of error bits of the first data with make The gap of the error correcting capability of error-correcting code is arranged the adjustment amplitude of threshold value, and the number of error bits of the first data is close to mistake Accidentally (for example, 10%-50% that the difference of the two is less than error correction code value) when the error correcting capability of correcting code, by adjustment amplitude setting For biggish value (for example, several times or designated value of the one step of threshold value value, one step), and in the mistake of the first data When bit number is much smaller than the error correcting capability of error-correcting code (for example, 50% of the difference of the two less than error correction code value), by width Degree adjusted value is set as lesser value, and (such as the 1/n of the 1/n of one step, one step, designated value, n take positive integer；Or M times of designated value, m is positively correlated with the number of error bits of the first data, for example, m is the inverse or NVM chip of ECC error correction ability Random electrical noise introduce number of error bits average value/mathematic expectaion inverse).As still another example, foundation The adjustment amplitude of the absolute value of the difference setting threshold value of the number of error bits of the number of error bits of first data and the second data, when this When absolute value is bigger, adjustment amplitude is bigger, and when the absolute value is smaller, adjustment amplitude is smaller.

The threshold adjustment range that the adjusting thresholds direction obtained according to step 840 and threshold value 850 obtain, updates threshold value Value (860).For example, the first value adjustment of threshold value is determined along identified adjustment direction in the current value of threshold value Adjustment amplitude.

It can constantly be executed in solid storage device use according to the method for the application embodiment shown in Fig. 8, from And the value of threshold value is kept tracking, make it possible to obtain the optimum value or preferred values of threshold value in time.Executing method shown in Fig. 8 needs Data are read from NVM chip.Optionally, in the light load of solid storage device, method as shown in Figure 8 is executed, with Reduce the influence to solid-state storage performance.Or periodically carry out method as shown in Figure 8.Still optionally, for NVM core Each of multiple threshold values of piece execute method as shown in Figure 8, to track the best or preferable value of each threshold value.Still may be used Selection of land just executes in the later period of solid storage device life cycle or after the generation of NVM chip reading data not correctable error The method of embodiment as shown in Figure 8, thus the early period of the life cycle in solid storage device, the tape reading of NVM chip is wide to be obtained To be all reserved to access of the user to solid storage device.

Still optionally, have with the tracked corresponding Physical Page of threshold value multiple.For example, multiple physics in NVM chip Multiple Physical Page in block use same threshold value.It, can be from corresponding to quilt in step 810 when repeating mode shown in Fig. 8 Any one Physical Page of selection in multiple Physical Page of the threshold value of tracking.Further, it is read in step 820 with step 830 The Physical Page of data out can be same physical page or different physics in the multiple Physical Page for corresponding to tracked threshold value Page.

Still optionally, multiple examples of method shown in Fig. 8 can be run in solid storage device.For example, in solid-state The example for storing the upper operation method shown in Fig. 8 of each of each NVM chip or multiple LUN (logic unit) of equipment, next pair One of NVM chip or one of LUN implement threshold value tracking.

Still optionally, the example that method shown in Fig. 8 can be run in solid storage device, sets solid-state storage Each operation method shown in Fig. 8 of standby each NVM chip or multiple LUN.For example, being taken turns to one of one of NVM chip or LUN Stream implements threshold value tracking.It can overlap each other to the threshold value tracking process of each NVM chip or each LUN, to concurrently execute.

Still optionally, since the first value of threshold value and second value are close, so that the number of error bits of the first data and the The number of error bits of two data is close, thus the also adjustment amplitude of edible second data threshold value in step 850.

In the another embodiment according to the application, still optionally, according to the method for the embodiment of the present application also foundation The first value and second value of threshold value obtain the third value of threshold value, so that second value and third Distribution value are in the two sides of the first value.It changes Sentence is talked about, and one of second value and third value is greater than the first value, and another of second value and third value are less than the first value.Example Such as, referring to Fig. 7, the abscissa that the first value of threshold value is a little 710, if second value takes a little 712 abscissa, selected point 714 Third value of the abscissa as threshold value.Still optionally, second value to the first value distance, at a distance from third value to the first value It is equal.

And third data also are obtained from the first Physical Page using the third value of threshold value.Error bit according to the second data The direction for reducing number of error bits, is determined as the adjustment direction of threshold value by several differences with the number of error bits of third data, with The step 840 of alternate figures 8.For example, second value takes a little 712 abscissa referring to Fig. 7, third value takes a little 714 abscissa, the The difference of the number of error bits of the number of error bits and third data of two data is greater than 0, that is, and negative direction reduces number of error bits, Negative direction is thus determined as adjusting thresholds direction.Optionally, also according to the number of error bits of the second data and third data The adjustment amplitude of the poor threshold value of number of error bits, so that the number of error bits and third of threshold adjustment range and the second data The difference of the number of error bits of data is positively correlated.For example, threshold adjustment range is proportional to the number of error bits and third of the second data The absolute value of the difference of the number of error bits of data；Alternatively, when the number of error bits of the second data and the error bit of third data When several absolute value of the difference is greater than designated value, the larger value is set by adjusting thresholds value, and when the number of error bits of the second data When being not more than designated value with the absolute value of the difference of the number of error bits of third data, it is set as adjusting thresholds value to be proportional to second The smaller value of the absolute value of the difference of the number of error bits of the number of error bits and third data of data.

Fig. 9 is the flow chart according to the application still searching threshold of another embodiment.In NVM chip, it can be set Threshold value have one or more, according to one of the threshold value that track or adjust, selection will read out the first Physical Page of data (910).Data (the first data) are read from the first Physical Page using the first value (for example, default value or current value) of threshold value (920).It can recognize the number of error bits of the data read.Referring also to Fig. 7, the first value of threshold value is the abscissa of such as point 710 Indicated threshold value.The second value of threshold value is obtained according to the first value of threshold value, and reads number from the first Physical Page using second value According to (the second data) (930).Adjustment direction (940) according to the second data threshold value that the second value using threshold value is read. According to the adjustment amplitude (950) for the first data threshold value that the first value using threshold value is read.

The adjusted value (960) of accumulative threshold value.Such as the direction of the adjusted value of threshold value has been obtained by step 940, and pass through Step 950 has obtained the amplitude of the adjusted value of threshold value, to obtain the adjustment of the threshold value of vector form (including direction and amplitude) Value.And add up the adjusted value of threshold value by summing to vector.As another example, step 940 has obtained the tune of threshold value The direction of whole value indicates the symbol (positive direction corresponds to "+" number, and negative direction corresponds to "-" number) of adjusted value, thus by having Symbolic number sums to add up the adjusted value of threshold value.

Next, it is judged that whether accumulative number is less than specified positive integer N (970).If accumulative number is less than N, repeat It executes step 920 and arrives step 970.If accumulative number is not less than N, according to the adjusted value of the threshold value added up, threshold value is updated Value (980).For example, with the adjusted value of added up threshold value and threshold value current value and, value as threshold value.It is optional Ground, if accumulative number is less than N, also execution step 910, to change the selection of first page, with from other pages for corresponding to threshold value Middle reading data.By the way that the value of N, the influence of the random noise in reading data to eliminate or reduce NVM chip, example is arranged Such as, N can be the positive integer less than 10.

It can constantly be executed in solid storage device use according to the method for the application embodiment shown in Fig. 9, from And the value of threshold value is kept tracking, make it possible to obtain the optimum value or preferred values of threshold value in time.

Still referring to Fig. 9, the another embodiment according to the application is provided.For the optimum value of the value of tracking threshold value T, selection One of Physical Page corresponding with threshold value T (being denoted as P).The current value of threshold value T is TC (the first value), is symmetrically selected in the two sides of TC Take second value (being denoted as TL) and third value (being denoted as TR) of threshold value, T L=TC-Delta, and TR=TC+Delta, wherein Delta For specified increment, for example, the multiple of the changeable minimum step for 1% or threshold value T of the range of the value of threshold value T. Data are read from Physical Page P respectively according to Tc, TL and TR, are denoted as Data (C) (the first data), Data (L) (the second number respectively According to) and Data (R) (third data).The number of error bits of Data (C), Data (L) and Data (R) be denoted as respectively B EC (C), BEC (L) and BEC (R).The direction of Direction=sign (BEC (L)-BEC (R)) as the adjusted value of threshold value is calculated, wherein " Sign (x) " indicates the sign function of x, as x>0, sign (x)=1, and as x<0, sign (x)=- 1, and as x=0, Sign (x)=0.It calculates Altitute (BEC (C)) (amplitude of the adjusted value of threshold value), wherein

And wherein, ECC_LimitFor the error correcting capability of error-correcting code, N is the positive integer N in step 970.Optionally, ECC_LimitFor the random electrical noise of designated value (for example, half of ECC error correction ability) or NVM chip less than ECC error correction ability Average value/mathematic expectaion of the number of error bits of introducing.

Next, calculating the adjusted value Δ T=Direction*Altitute (BEC (C)) and updated threshold of threshold value Value is T=TC+ Δ T.

Optionally, add up N number of adjusted value of threshold value. More High-precision threshold value TC '=∑ Δ T+TC after new.It is right for threshold value is arranged in NVM chip since TC ' may be floating number High-precision threshold value TC ' is rounded, and obtains value (980) of the TC=Round (∑ Δ T+TC) as updated threshold value, wherein Round indicates floor operation (for example, rounding up).

Still optionally, the high-precision version TC ' of the threshold value saved, and when updating threshold value again, more new peak The value of the threshold value TC ' of precision=∑ Δ T+TC ' and updated threshold value is TC=Round (∑ Δ T+TC).

Figure 10 is the flow chart according to the application further embodiment.By combining according to the application implementation shown in fig. 5 Example and embodiment shown in Fig. 8, obtained embodiment (as shown in Figure 10), by obtaining number of error bits more accurately come excellent Change the tracking to threshold value.

Referring to Figure 10, for threshold value is arranged, multiple Physical Page (510) in wordline are read, and obtain word according to result is read The state (520) of storage unit on line.It is basic to the data being written in the Physical Page of wordline in embodiment as shown in Figure 10 It is upper that there is no limit.For example, the data of write-in can be from user's application and the arbitrary data through being randomized.

In order to obtain the optimum value of a threshold value (for example, TH1, referring also to Fig. 3 A), know from the storage unit in wordline Not Ju You state relevant to threshold value multiple storage units (530).State relevant to threshold value is depositing of being distinguished by threshold value The read-out voltage of storage unit is distributed two adjacent states.According to an embodiment of the present application, for obtain threshold value optimum value, Only in accordance with the bit error rate of the storage unit with the relevant state of threshold value, so as to avoid the storage unit of other states A variety of bit-errors reasons are interfered to statistical result bring.

Next, according to the bit of multiple storage units with state relevant to threshold value (for example, TH1) in wordline Error rate, the optimum value (540) of searching threshold.For example, passing through the method (step according to the application embodiment shown in Fig. 8 1020 carry out the optimum value of searching threshold to step 1060).

According to one of threshold value that track or adjust (for example, TH1), using the first value of threshold value (for example, default value or working as Preceding value) from step 530 obtain multiple storage units read data (the first data) (1020).Read-out data are more from this The bit relevant to the threshold value that track or adjust of a storage unit storage.And the first value according to threshold value obtains threshold value Second value, and data (the second data) (1030) are read from multiple storage unit using second value.For example, the first value is added Or designated value is subtracted, obtain second value.Read-out data are stored from multiple storage unit and to track or adjust The relevant bit of threshold value.

Adjustment direction (1040) according to the second data threshold value that the second value using threshold value is read.According to utilize threshold The adjustment amplitude (1050) for the first data threshold value that first value of value is read.The adjusting thresholds side obtained according to step 1040 To and threshold value 1050 obtain threshold adjustment range, update the value (1060) of threshold value.

It is to be appreciated that the other embodiments (for example, the embodiment shown in conjunction with Fig. 9) according to the application can also be passed through Carry out the optimum value of searching threshold.

The optimum value of obtained threshold value is recorded, and reads NVM chip (550) using the optimum value of threshold value.

Figure 11 is the block diagram of solid storage device.The solid-state storage that can be shown according to an embodiment of the present application by Figure 11 is set Standby middle implementation.Solid storage device 1102 is coupled with host, for providing storage capacity for host.Host is set with solid-state storage It can be coupled in several ways between standby 1102, coupled modes include but is not limited to for example, by SATA (Serial Advanced Technology Attachment, Serial Advanced Technology Attachment), SCSI (Small Computer System Interface, small computer system interface), SAS (Serial Attached SCSI, Serial Attached SCSI (SAS)), IDE (Integrated Drive Electronics, integrated drive electronics), USB (Universal Serial Bus, general string Row bus), (Peripheral Component Interco nnect Express, PCIe, high speed peripheral component are mutual by PCIE Connection), NVMe (NVM Express, high speed non-volatile memory), Ethernet, optical-fibre channel, the connection host such as cordless communication network with Solid storage device 1102.Host, which can be, to be set through the above way with the information processing that solid storage device communicates It is standby, for example, personal computer, tablet computer, server, portable computer, the network switch, router, cellular phone, a Personal digital assistant etc..Store equipment 1102 include interface 1103, control unit 1104, one or more NVM chip 1105 and DRAM (Dynamic Random Access Memory, dynamic RAM) 1110.

Nand flash memory, phase transition storage, FeRAM (Ferroelectric RAM, ferroelectric memory), M RAM (Magnetic Random Access Memory, magnetoresistive memory), RRAM (Resistive Rand om Access Memory, resistance-variable storing device) etc. be common NVM.

Interface 1103 can be adapted to for example, by SATA, IDE, USB, PCIE, NVMe, SAS, Ethernet, optical-fibre channel etc. Mode and host exchanging data.

The data that control unit 1104 is used to control between interface 1103, NVM chip 1105 and DRAM 1110 pass It is defeated, it is also used to storage management, host logical address to flash memory physical address map, erasure balance, bad block management etc..Such as the application The embodiment that Fig. 5, Fig. 6 A, Fig. 6 B, Fig. 8, Fig. 9 or Figure 10 are shown is implemented by control unit 104.Control unit 104 can pass through The various ways of software, hardware, firmware or combinations thereof are realized.For example, control unit 1104 can be FPGA (Field- Programmable gate array, field programmable gate array), ASIC (Application Specific Integrated Circuit, application specific integrated circuit) or a combination thereof form；Control unit 1104 also may include place Device or controller are managed, software is executed in processor or controller and carrys out the hardware of manipulation and control component 1104 to handle IO (Input/Output) it orders；Control unit 1104 is also coupled to DRAM 1110, and may have access to the data of DRAM 1110； The data of the I/O command of FTL table and/or caching can be stored in DRAM.

Control unit 1104 includes flash interface controller (or being Media Interface Connector controller, flash memory channel controller), Flash interface controller is coupled to NVM chip 1105, and to NVM chip in a manner of the interface protocol to follow NVM chip 1105 1105 issue order, to operate NVM chip 1105, and receive the command execution results exported from NVM chip 1105.NVM chip 1105 interface protocol includes interface protocol or standard well known to " Toggle ", " ONFI " etc..

The software and/or firmware (referred to collectively below as " firmware ") run in control unit 1104 can be stored in NVM core In piece 1105 or other firmware memory.When solid storage device 1102 powers on, from firmware memory by firmware loads to In memory inside DRAM 1110 and/or control unit 1104.Optionally, it is received simultaneously by interface 1103 or debugging interface Loading firmware.

It can be applied to the solid storage device based on NVM chip according to the threshold setting method of the embodiment of the present application, including But be not limited to solid state hard disk, USB flash disk, SD card, can also be applied to the portable electronic devices such as mobile phone, tablet computer and other It is a variety of that using NVM chip, (nand flash memory, phase transition storage, FeRAM, MRAM etc. are common NVM.) needs store letter The electronic equipment of breath.

Although the example of the application reference is described, it is intended merely to the purpose explained rather than the limitation to the application, Change to embodiment, increase and/or deletion can be made without departing from scope of the present application.

In the field benefited involved in these embodiments, from the description above with the introduction presented in associated attached drawing Technical staff will be recognized the application recorded here it is many modification and other embodiments.It should therefore be understood that this Shen It please be not limited to disclosed specific embodiment, it is intended to will modify and other embodiments include in the scope of the appended claims It is interior.Although using specific term herein, them are only used on general significance and describing significance and not is The purpose of limitation and use.

Claims (10)

1. a kind of method that threshold value is arranged, comprising:

Read multiple pages in the first wordline；

Determine the data mode of multiple storage units in the first wordline；According to storage unit the first data mode being written into The adjustment direction value of the second data mode identification first threshold and first threshold that read；

The adjustment direction value of the accumulative first threshold identified from the multiple storage unit, obtains the adjusted value of first threshold；With And

First threshold is updated with the adjusted value of first threshold.

2. according to the method described in claim 1, further include:

The third data mode being written into and the 4th data mode read identification second threshold and the according to storage unit The adjustment direction value of two threshold values；

The adjustment direction value of the accumulative second threshold identified from the multiple storage unit, obtains the adjusted value of second threshold；With And

Second threshold is updated with the adjusted value of second threshold.

3. method according to claim 1 or 2, wherein

When the first data mode and the second data mode are that read-out voltage is distributed adjacent state, determine that first threshold is to discriminate between The adjustment direction value of the threshold value and first threshold of first data mode and the second data mode is indicated from the first data mode Direction of the voltage's distribiuting region to the voltage's distribiuting region of the second data mode.

4. method according to claim 1 or 2, wherein

It is described when the first data mode of the first storage unit and the second data mode are that threshold voltage is distributed identical state First storage unit does not influence the adjusted value of the first threshold.

5. method according to claim 1 or 2, wherein

When the first data mode of the first storage unit is that read-out voltage distribution is not identical and non-conterminous with the second data mode When state, first storage unit does not influence the adjusted value of the first threshold.

6. according to the method described in claim 2, wherein

When third data mode and the 4th data mode are that read-out voltage is distributed adjacent state, determine that second threshold is to discriminate between The adjustment direction value of the threshold value and second threshold of third data mode and the 4th data mode is indicated from third data mode Direction of the voltage's distribiuting region to the voltage's distribiuting region of the 4th data mode.

7. method described in one of -6 according to claim 1, wherein

If the adjusted value of first threshold is greater than the first reference value, it is incremented by first threshold to update first threshold；Or

If the adjusted value of first threshold less than the second reference value, makes first threshold successively decrease to update first threshold.

8. according to the method described in claim 7, further include:

Read multiple pages in the first wordline；

Determine the data mode of multiple storage units in the first wordline；

The first data mode being written into and the second data mode read identification first threshold and the according to storage unit The adjustment direction value of one threshold value；

The adjustment direction value of the accumulative first threshold identified from the multiple storage unit, obtains the adjusted value of first threshold；With And

First threshold is updated with the adjusted value of first threshold.

9. method described in one of -8 according to claim 1, wherein

If the adjusted value of first threshold between the first reference value and the second reference value, records first threshold.

10. method described in one of -9 according to claim 1, further includes:

In response to data read command, is read with updated first threshold and belong to same logical units or tube core with the first wordline Page.