CN109375869A - Realize the method and system, storage medium of data reliable read write - Google Patents
Realize the method and system, storage medium of data reliable read write Download PDFInfo
- Publication number
- CN109375869A CN109375869A CN201811082866.6A CN201811082866A CN109375869A CN 109375869 A CN109375869 A CN 109375869A CN 201811082866 A CN201811082866 A CN 201811082866A CN 109375869 A CN109375869 A CN 109375869A
- Authority
- CN
- China
- Prior art keywords
- data
- write
- storage
- temperature
- error rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/14—Error detection or correction of the data by redundancy in operation
- G06F11/1402—Saving, restoring, recovering or retrying
- G06F11/1446—Point-in-time backing up or restoration of persistent data
- G06F11/1458—Management of the backup or restore process
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/30—Monitoring
- G06F11/3058—Monitoring arrangements for monitoring environmental properties or parameters of the computing system or of the computing system component, e.g. monitoring of power, currents, temperature, humidity, position, vibrations
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0683—Plurality of storage devices
- G06F3/0689—Disk arrays, e.g. RAID, JBOD
Abstract
The present invention provides the method and system, storage medium for realizing data reliable read write, is related to data storage device and method, belongs to the method art processes of data storage the following steps are included: recording write-in temperature T1 when data are written in storage chip；After the completion of write-in, environment temperature T2 locating for real-time monitoring storage chip；Judge whether environment temperature T2 and the difference being written between temperature T1 are more than threshold value t, if it exceeds entering in next step；When difference is more than threshold value t, tests to the data of storage and obtain the bit error rate of data；Judge whether the bit error rate of data reaches bit error rate threshold, data recovery is carried out if reaching bit error rate threshold.It is corresponding that corresponding system and storage medium are also provided.
Description
Technical field
The present invention relates to data storage device and methods, belong to the method field of data storage.
Background technique
With the update of flash memory, the data stored in flash memory are more and more sensitive to the variation of temperature, for example, under high temperature
The data of write-in, the probability for reading error at low temperature can increase considerably, otherwise be also.
However, more and more flash memory such as SSD solid state hard disks or storage array are used in industrial occasions, and these
The variation of the environment temperature of occasion is very wide in range: from -40 DEG C -+85 DEG C, under this this big temperature difference environment under working environment,
The data being written in flash memory can change with the variation of ambient temperature, i.e., the digital state hair in 0,1 in storage chip
It is raw to change, after changing to a certain extent, it will lead to the data of storage, file is damaged or loses.
In the prior art still without preferable solution, industry usual way is to establish backup, i.e., specific permanent
Server or storage center are established in warm environment to back up and save crucial data, it is clear that this kind of scheme is not appropriate for all
User, is especially not suitable for personal consumption user and medium-sized and small enterprises use.
Summary of the invention
The present invention is to solve under above-mentioned wide temperature difference condition, and the prior art cannot preferably realize data reliable read write
Problem and carry out, and it is an object of the present invention to provide a kind of method and system for realizing data reliable read write, this method, which is applied, to be used
Solves the problems, such as data reliable read write under the wide temperature difference on the storage device of flash memory.
The present invention provides a kind of method for realizing data reliability read-write, which comprises the following steps:
Write-in temperature T when data are written in storage chip, when record write-in is completed1；
When monitoring storage chip locating for environment temperature T2；
Judge environment temperature T2With write-in temperature T1Between difference whether be more than threshold value t；
When difference is more than threshold value t, tests to the data of storage and obtain the bit error rate of data；
Judge whether the bit error rate of data reaches bit error rate threshold, data recovery is carried out if reaching bit error rate threshold.
The method provided by the invention for realizing data reliability read-write, can also have the feature that, wherein record is write
The process for entering temperature T1 includes:
Wherein, the process of record write-in temperature T1 includes:
Storage chip is divided into multiple storage regions, the storage region includes multiple storage cells；
When storage region is fully written, record the moment corresponding temperature T1, and by as metadata write-in storage to depositing
The specific region for storing up chip, obtains the corresponding write-in temperature T1 of each storage cell.
The method provided by the invention for realizing data reliability read-write, can also have the feature that, wherein described to deposit
Storing up unit is memory block or memory page.
The method provided by the invention for realizing data reliability read-write, can also have the feature that, wherein step 2
Middle real-time monitoring environment temperature T2Sample frequency be every 1-30 second once.
The method provided by the invention for realizing data reliability read-write, can also have the feature that, wherein to storage
The process tested of data include:
Compare the corresponding environment temperature T of all storage cells2With write-in temperature T1Between difference and according to numerical values recited
It is arranged, preferentially the storage cell big to difference data carries out data scanning.
The method provided by the invention for realizing data reliability read-write, can also have the feature that, wherein to storage
The process tested of data include:
When not having data write-in, the data of all storage cells of entire storage chip are scanned.
The method provided by the invention for realizing data reliability read-write, can also have the feature that, wherein work as data
The bit error rate reaches threshold value, but when being less than the hardware ECC error correction ability of storage chip itself, starts hardware ECC error correction, will be complete
The data of recovery are written back to new storage unit again, while recording write-in temperature T when write-in1；
When hardware ECC error correction ability of the error rates of data more than storage chip itself, start additional time data recovery mechanism
To restore data.
The method provided by the invention for realizing data reliability read-write, can also have the feature that, wherein setting is deposited
The hardware ECC error correction ability for storing up chip itself is the bit error rate of 70-85%.
The method provided by the invention for realizing data reliability read-write, can also have the feature that, wherein the volume
Outer time data recovery mechanism includes that RAID data restores.
The present invention also provides a kind of systems for realizing data reliability read-write characterized by comprising
Thermograph module is written, for when data are written in storage chip, temperature T1 to be written in record；
Environment temperature detection module is used for the environment temperature T locating for real-time monitoring storage chip after the completion of write-in2；
Judgment module, for judging environment temperature T2With write-in temperature T1Between difference whether be more than threshold value t；
Inspection module, for testing to the data of storage and obtaining the error code of data when difference is more than threshold value t
Rate；
Data recovery module, judges whether the bit error rate of data reaches bit error rate threshold, if reaching bit error rate threshold
Carry out data recovery.
The present invention also provides a kind of storage mediums, are stored thereon with computer program, which is characterized in that the computer journey
The method of above-mentioned realization data reliability read-write is realized when sequence is executed by processor.
The function and effect of the present invention is: the method that data reliability read-write is realized involved according to the present invention, because
For when data are written in storage chip, temperature T is written in record1；And after the completion of write-in, ring locating for real-time monitoring storage chip
Border temperature T2；After collecting environment temperature, environment temperature T is judged2With write-in temperature T1Between difference whether be more than threshold value t,
If it exceeds illustrating that biggish change may occur for the data saved under the environment, need to test；When difference is more than threshold
When value t, tests to the data of storage and obtain the bit error rate of data；According to the different situations of the bit error rate of data, in time
Data recovery is carried out using different repair mode, so, method operation provided by the invention in the storage device can and
When acquisition write-in data after storage chip locating for temperature, and in real time with write-in when temperature be compared, when write-in temperature
When degree and environment temperature are more than the threshold value of setting, just illustrate that the data stored after write-in may have occurred loss, a stepping of going forward side by side
Performing check knows specific error rates of data, and different repair modes is selected according to the bit error rate size of data to carry out data
It repairs.
Detailed description of the invention
Fig. 1 is the step schematic diagram that the method for data reliable read write is realized in the embodiment of the present invention；
Fig. 2 is the process schematic of record write-in temperature；And
Fig. 3 is the module frame chart of the system of the realization data reliability read-write provided in the embodiment of the present invention.
Specific embodiment
It is real below in order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention
Example combination attached drawing is applied to realize the method for data reliable read write to the present invention and realize that the system of data reliable read write, storage are situated between
Matter is specifically addressed.
Embodiment 1
Fig. 1 is the step schematic diagram that the method for data reliable read write is realized in the embodiment of the present invention.
As shown in Figure 1, the method provided in this embodiment for realizing data reliability read-write, comprising the following steps:
Step S1, the write-in temperature T1 when data are written in storage chip, when record write-in is completed.
In the present embodiment, the storage chip is nand flash memory chip, specially SLC, MLC, TLC or QLC flash memory
The nand flash memory chip of grain production.Theoretically, can also make other kinds of storage chip, for example, NOR flash memory, ROM,
PROM, EPROM, EEPROM, Flash ROM, FRAM, MRAM, RRAM, PCRAM etc. are that can be used as storage core of the invention
Piece.
SLC, Single-LevelCell, i.e. 1bit/cell, the speed fast service life is long, price it is super it is expensive (about MLC3 times or more
Price), about 100,000 erasing and writing lifes.
MLC, Multi-LevelCell, i.e. 2bit/cell, speed General Life is general, and price is general, about 3000---
10000 erasing and writing lifes.
TLC, Trinary-LevelCell, i.e. 3bit/cell, Ye You Flash producer is 8LC, the relatively slow service life phase of speed
To short, cheap, about 500 erasing and writing lifes.
QLC, Quad-Level Cell, i.e. 4bit/cell support 16 charge values, and the speed most slow service life is most short.
The nand flash memory chip of these three structures, the briefly best performance of SLC, price superelevation.It is typically used as enterprise
Grade or high-end enthusiast.MLC performance is enough, and moderate cost is consumer level SSD application mainstream, and TLC comprehensive performance is minimum, and price is most
Cheaply.But the performance of TLC flash memory can be made up, improved by high-performance master control, master control algorithm.
Fig. 2 is the process schematic of record write-in temperature.
Specifically, record write-in temperature T1Process include:
Storage chip is divided into multiple storage regions by step S1-1, and the region includes multiple storage cells.
Wherein, the storage cell is memory block (block) or memory page (page), it is however generally that, one basic to deposit
The capacity for storing up unit is 16k byte, this specific data is different and different according to the manufacturer of storage particle.
Step S1-2 records the moment corresponding temperature T1, and be written as metadata when storage region is fully written
The specific region for storing storage chip obtains the corresponding write-in temperature T1 of each storage cell.Specific region is reserved special
Door is used to store the region of these data.
When data are written, all by control chip possessed by storage device (including control chip and storage chip) into
ECC protection is gone.
ECC is writing a Chinese character in simplified form for " Error Correcting Code ", and Chinese is " error checking and correction ".ECC is one
Kind can be realized the technology of " error checking and correction ", and ECC protection is exactly to apply this technology to protect the data of storage
Corresponding ECC code is written by control chip and is stored in storage chip generally in storing data by the operation of shield,
This will allow the data being stored in storage chip carry out hardware recovery.ECC can also be construed to error correction
or correcting code、error checking and correcting、error checking and
Correcting is also interpreted as Error correction circuit, is that a kind of maturation is applied and set in data storage
Standby upper data protection and Restoration Mechanism.
Step S2, after the completion of write-in, environment temperature T2 locating for real-time monitoring storage chip.
Because the write-in of data may be continuous, it is also possible to it is desultory, and writing process and reading in practice
Process and waiting process are interlaced, so write-in completion here is also possible to for some storage cell
The storage region artificially divided for some.
Real-time monitoring environment temperature T2Sample frequency be every 1-30 second once, this frequency is according to the storage chip institute
Depending on the working environment at place and the frequency of read-write, if the temperature change of working environment is bigger, and storage chip is read
It is frequent to write comparison, it is meant that in the case of this kind, the temperature change of storage chip can relatively acutely, and corresponding environment temperature is adopted
Sample frequency will be relatively high.
Step S3 judges whether environment temperature T2 and the difference being written between temperature T1 are more than threshold value t, if it exceeds into
Next step S4.
Specifically for each storage cell, needs to calculate real-time environment temperature T2 in real time and deposited with itself
The temperature gap of the write-in temperature T1 of unit write-in data is stored up, and judges whether the difference looked into the threshold value t of setting.
Obviously, according to the data being written in the storage chip introduced in background technique to the sensitive situations of temperature, write-in temperature
If the difference of degree and environment temperature reaches some value, that is, this threshold value t, then the risk of loss of data will be very big,
And this threshold value t is obviously and can all there be relationship in type, the technique of production and the manufacturer of storage chip.
For use environment, the setting value of this threshold value t is also influenced whether.Clearly as the significance level of data
Difference, for especially important valuable data, the threshold value t for the difference that we set is with regard to smaller, temperature variation small in this way
Can triggering following step S4 checked operation, so as to preferably protect the integrality of these valuable datas.
On the other hand, due to storage chip type, for example, SLC type nand flash memory particle just than the NAND of MLC type
Flash memory is particle stabilized, reliably, just has stronger resistivity to temperature variation, even if temperature change, the stabilization of data
Property also than MLC, TLC is higher, in this way can be in phase using the threshold value t of difference of the storage chip of SLC type flash memories particle
It is set in the case where larger.
Same reason, the technique of different production and manufacturer also result in the threshold of the temperature gap of storage chip
Value t is different.Applicant suggests that the threshold range used is 20-80 DEG C.
Step S4 tests to the data of storage and obtains the bit error rate of data when difference is more than threshold value t.
There are two types of operation modes for the process tested to the data of storage:
Mode one includes following operation:
Compare the corresponding environment temperature T of all storage cells2With write-in temperature T1Between difference and according to numerical values recited
It is arranged, preferentially the storage cell big to difference data carries out data scanning reading, and scanning show that some storage is single after reading
The bit error rate of position institute storing data.
Obviously operation is suitable for that storage chip is busy in this, that is, carrying out data reading or write operation when
It waits, since in this case, scan full hard disk reading can not be carried out.Under such situation, the present embodiment is arranged according to size of the difference
Sequence, priority processing difference big storage cell are tested, and are equivalent to are classified in battlefield to injury in this way, preferential to locate
Reason treatment severely injured personnel, the present embodiment so operates can be when storage chip be busy, the data detection and recovery effect that are optimal
Fruit.
Mode two includes following operation:
When not having data write-in, the data of all storage cells of entire storage chip are scanned.
Obviously, when entire storage chip is not written and read, so that it may which directly the read-write of unlatching scan full hard disk comes
To the bit error rate of the data of each storage cell.
Step S5, judges whether the bit error rate of data reaches bit error rate threshold, is counted if reaching bit error rate threshold
According to recovery.
According to the bit error rate and threshold value, the hardware ECC error correction ability of storage chip of the data that some storage cell is stored
The size relation of the attainable bit error rate carry out corresponding processing:
Hardware ECC protection mechanism can be reported during correcting data error every cell data (usually 512byte-4KB it
Between) an opposite percentage is arranged further according to the error correcting capability of hardware ECC in bit (Bit) quantity of data that can correct
Threshold value, the i.e. peak of the bit error rate, as the attainable bit error rate of hardware ECC error correction ability institute of storage chip, this error code
Rate is known as the error correcting capability of hardware ECC.The present embodiment can be according to the life cycle of storage equipment, flash memory characteristics, by hardware ECC's
Error correcting capability is set in the bit error rate in 70-85%.
When error rates of data is not up to threshold value, illustrate that data are reliably, there is no loss situation occurs, without carrying out
Processing.This threshold value becomes data reliable thresholds, is usually determined by the control chip of storage device, and numerical value is from 10-5To 10-9Differ.
When error rates of data reaches threshold value, but is less than the hardware ECC error correction ability of storage chip itself, start hardware
The data completely restored are written back in new storage cell by ECC error correction again, while recording write-in temperature when write-in again
T1。
When error rates of data is more than the hardware ECC error correction ability of storage chip itself, starts additional data and restore machine
System is to restore data.Wherein, the additional time data recovery mechanism includes RAID data recovery, re-try, soft-retry number
According to recovery etc..
The full name of RAID is Redundant Array of Inexpensive Disk, and translator of Chinese is cheap redundant magnetic
The abbreviation abbreviation RAID technique of disk array.It is the DavidPatterson by the branch school California, USA university Berkeley in 1988
The disk redundancy technology that professor et al. puts forward.From that time, disk array technology develops quickly, and gradually moves to maturity.
People have gradually recognized disk array technology at present.Disk array technology can be divided into several ranks in detail
0-5RAID technology, and developed the new rank of so-called RAID Level 10,30,50 again.It is simple with the benefit of RAID
Say and be exactly: highly-safe, speed is fast, data capacity super large.The RAID technique of certain ranks can be increased to speed individually
The 400% of hard disk drive.Disk array links together multiple hard disk drives collaborative work, substantially increases speed,
The reliability of hard-disk system is increased to close to error-free boundary simultaneously.These " fault-tolerant " system speeds are exceedingly fast, while reliability
It is high.
RAID restoration methods are can to save entire Die using multiple die (disk sheet or storage cell) even-odd check
(disk sheet storage cell) scrap or loss of data, to restore to data.
Several data point voltage's distribiutings of re-try, i.e. read retry, MLC or TLC, SLC are possible to translate, as long as
Several distributions can restore without superposition.ReadRetry attempts to read data with different reference voltages, until reading
Come.
Soft-retry is read with Soft Inform ation.It integrates after reading several groups of data from different reference voltages and is finally counted
According to.This needs more powerful ECC error correction ability, as LDPC (english abbreviation of LowDensity Parity Check Code,
Chinese means low density parity check code, is most proposed in his doctoral thesis early in the 1960s by Gallager.)
If data can not be restored by any mechanism, corresponding data are labeled as damaging, as read this storage cell
Data will return to error condition, show that the area data is unreadable.
Embodiment 2
Fig. 3 is the module frame chart of the system of the realization data reliability read-write provided in the embodiment of the present invention.
It include write-in thermograph module 101, environment the present embodiment provides a kind of system for realizing data reliability read-write
Temperature detecting module 102, judgment module 103, inspection module 104, data recovery module 105.
Thermograph module 101 is written, for the write-in temperature when data are written in storage chip, when record write-in is completed
T1。
Environment temperature detection module 102, for environment temperature T2 locating for real-time monitoring storage chip.
Judgment module 103, for judging whether environment temperature T2 and the difference being written between temperature T1 are more than threshold value t.
Inspection module 104, for testing to the data of storage and obtaining the mistake of data when difference is more than threshold value t
Code rate.
Data recovery module 105, judges whether the bit error rate of data reaches bit error rate threshold, if reaching bit error rate threshold
Then carry out data recovery.
Specifically, as a kind of optimization:
Preferably, record write-in temperature T1Process include:
Storage chip is divided into multiple storage regions, the storage region includes multiple storage cells；
When storage region is fully written, record the moment corresponding temperature T1, and by as metadata write-in storage to depositing
The specific region for storing up chip, obtains the corresponding write-in temperature T1 of each storage cell.
Preferably, the process tested to the data of storage includes:
Compare the corresponding environment temperature T of all storage cells2With write-in temperature T1Between difference and according to numerical values recited
It is arranged, preferentially the storage cell big to difference data carries out data scanning；Or
The process tested to the data of storage includes:
When not having data write-in, the data of all storage cells of entire storage chip are scanned.
Preferably, when error rates of data reaches threshold value, but is less than the hardware ECC error correction ability of storage chip itself,
Start hardware ECC error correction, the data completely restored is written back to again in new storage cell, while recording write-in when write-in
Temperature T1。
Preferably, when the hardware ECC error correction ability that error rates of data is more than storage chip itself, it is extensive to start additional data
The system of answering a pager's call is to restore data.
Preferably, the hardware ECC error correction ability of storage chip itself is set as the bit error rate of 70-85%.
Preferably, the additional time data recovery mechanism includes that RAID data restores.
Embodiment 3
The present embodiment provides a kind of storage mediums, are stored thereon with computer program, the computer program is by processor
The method of realization data reliability read-write below is realized when execution:
Step S1, the write-in temperature T1 when data are written in storage chip, when record write-in is completed.
Specifically, step S1 further include:
Storage chip is divided into multiple storage regions by step S1-1, and the region includes multiple storage cells.
Step S1-2 records the moment corresponding temperature T1, and be written as metadata when storage region is fully written
The specific region for storing storage chip obtains the corresponding write-in temperature T1 of each storage cell.
Step S2, after the completion of write-in, environment temperature T2 locating for real-time monitoring storage chip.
Step S3 judges whether environment temperature T2 and the difference being written between temperature T1 are more than threshold value t, if it exceeds into
Next step S4.
Step S4 tests to the data of storage and obtains the bit error rate of data when difference is more than threshold value t.
Step S5, judges whether the bit error rate of data reaches bit error rate threshold, is counted if reaching bit error rate threshold
According to recovery.
The obvious storage medium can be CD, flash disk or disk, floppy disk, CD, DVD, hard disk, flash memory, CF card, SD
Card, mmc card, SM card, memory stick (Memory Stick), xD card, tape, magneto-optic disk etc., by the computer of the corresponding above method
On the storage medium, user installs or runs after obtaining the storage medium can be in correspondence for program storage or imprinting
Storage device on execute the embodiment of the present invention 1 method.
The action and effect of the present embodiment is: the side of realization data reliability read-write according to involved in the present embodiment
Method, because when data are written in storage chip, record write-in temperature T1；And after the completion of write-in, real-time monitoring storage chip institute
The environment temperature T at place2；After collecting environment temperature, environment temperature T is judged2With write-in temperature T1Between difference whether be more than
Threshold value t needs to test if it exceeds illustrating that biggish change may occur for the data saved under the environment；Work as difference
When more than threshold value t, tests to the data of storage and obtain the bit error rate of data；According to not sympathizing with for the bit error rate of data
Shape timely carries out data recovery using different repair modes, so, method operation provided by the invention is in the storage device
Temperature locating for storage chip after write-in data can timely be obtained, and be compared in real time with temperature when write-in, when
When the threshold value of temperature and environment temperature more than setting is written, just illustrates that the data stored after write-in may have occurred loss, go forward side by side
One stepping performing check knows specific error rates of data, selected according to the bit error rate size of data different repair modes into
Row data reparation.
Further, because of record write-in temperature T1Process be that storage chip is first divided into multiple storage regions, it is described
Region includes multiple storage cells；It is written in storage cell then as data, when storage cell is fully written, just records
The moment corresponding temperature T1, and stored by being written as metadata, obtain the corresponding write-in temperature T of each storage cell1, institute
A write-in temperature can be corresponding with using each most basic storage cell and as metadata, it so can be to each basic
Storage cell be monitored examine and restored when there is loss of data.
Further, there are two types of operation modes for the process tested to the data of storage:
Mode one includes following operation:
Compare the corresponding environment temperature T of all storage cells2With write-in temperature T1Between difference and according to numerical values recited
It is arranged, preferentially the storage cell big to difference data carries out data scanning reading, and scanning show that some storage is single after reading
The bit error rate of position institute storing data.
Obviously this operation is suitable for that storage chip is busy, that is, carrying out data reading or write operation when
It waits, since in this case, scan full hard disk reading can not be carried out.Under such situation, the present embodiment is arranged according to size of the difference
Sequence, priority processing difference big storage cell are tested, and are equivalent to are classified in battlefield to injury in this way, preferential to locate
Reason treatment severely injured personnel, the present embodiment so operates can be when storage chip be busy, the data detection and recovery effect that are optimal
Fruit.
Further, the present embodiment stores the difference of the bit error rate of different data according to some storage cell
Data the bit error rate and threshold value, the hardware ECC error correction ability of storage chip institute the attainable bit error rate size relation progress
Corresponding processing:
When error rates of data is not up to threshold value, illustrate that data are reliably, there is no loss situation occurs, without carrying out
Processing；
When error rates of data reaches threshold value, but is less than the hardware ECC error correction ability of storage chip itself, start hardware
The data completely restored are written back in new storage cell by ECC error correction again, while recording write-in temperature when write-in again
T1；
When error rates of data is more than the hardware ECC error correction ability of storage chip itself, starts additional data and restore machine
System is to restore data.Wherein, the additional time data recovery mechanism includes RAID data recovery, re-try, soft-retry number
According to recovery etc.；
If data can not be restored by any mechanism, corresponding data are labeled as damaging, as read this storage cell
Data will return to error condition, show that the area data is unreadable.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the present invention
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the present invention, which can be used in one or more,
The shape for the computer program product implemented in usable storage medium (including but not limited to magnetic disk storage and optical memory etc.)
Formula.
The present invention be referring to according to the method for the embodiment of the present invention, the process of equipment (system) and computer program product
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
Above embodiment is preferred case of the invention, the protection scope being not intended to limit the invention.
Claims (10)
1. a kind of method for realizing data reliability read-write, which comprises the following steps:
Write-in temperature T when data are written in storage chip, when record write-in is completed1；
Environment temperature T locating for real-time monitoring storage chip2；
Judge environment temperature T2With write-in temperature T1Between difference whether be more than threshold value t；
When difference is more than threshold value t, tests to the data of storage and obtain the bit error rate of data；
Judge whether the bit error rate of data reaches bit error rate threshold, data recovery is carried out if reaching bit error rate threshold.
2. the method according to claim 1 for realizing data reliability read-write, it is characterised in that:
Wherein, the process of record write-in temperature T1 includes:
Storage chip is divided into multiple storage regions, the storage region includes multiple storage cells；
When storage region is fully written, the moment corresponding temperature T1 is recorded, and storage to storage core is written as metadata
The specific region of piece obtains the corresponding write-in temperature T1 of each storage cell.
3. the method according to claim 1 for realizing data reliability read-write, it is characterised in that:
Wherein, the storage cell is memory block or memory page.
4. the method according to claim 1 for realizing data reliability read-write, it is characterised in that:
Wherein, the process tested to the data of storage includes:
Compare the corresponding environment temperature T of all storage cells2With write-in temperature T1Between difference and carried out according to numerical values recited
Arrangement, preferentially the storage cell big to difference data carries out data scanning.
5. the method according to claim 1 for realizing data reliability read-write, it is characterised in that:
Wherein, the process tested to the data of storage includes:
When not having data write-in, the data of all storage cells of entire storage chip are scanned.
6. the method according to claim 1 for realizing data reliability read-write, it is characterised in that:
Wherein,
When error rates of data reaches threshold value, but is less than the hardware ECC error correction ability of storage chip itself, start hardware ECC
The data completely restored are written back in new storage cell by error correction again, while recording write-in temperature T when write-in1；
When hardware ECC error correction ability of the error rates of data more than storage chip itself, it is next extensive to start additional time data recovery mechanism
Complex data.
7. the method according to claim 6 for realizing data reliability read-write, it is characterised in that:
Wherein, the hardware ECC error correction ability of storage chip itself is set as the bit error rate of 70-85%.
8. the method according to claim 6 for realizing data reliability read-write, it is characterised in that:
Wherein, the additional time data recovery mechanism includes that RAID data restores.
9. the system for realizing data reliability read-write characterized by comprising
Thermograph module is written, for when data are written in storage chip, temperature T1 to be written in record；
Environment temperature detection module is used for the environment temperature T locating for real-time monitoring storage chip after the completion of write-in2；
Judgment module, for judging environment temperature T2With write-in temperature T1Between difference whether be more than threshold value t；
Inspection module, for testing to the data of storage and obtaining the bit error rate of data when difference is more than threshold value t；
Data recovery module, judges whether the bit error rate of data reaches bit error rate threshold, carries out if reaching bit error rate threshold
Data are restored.
10. a kind of storage medium, is stored thereon with computer program, which is characterized in that the computer program is held by processor
Claim 1 to 8 described in any item methods are realized when row.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811082866.6A CN109375869A (en) | 2018-09-17 | 2018-09-17 | Realize the method and system, storage medium of data reliable read write |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811082866.6A CN109375869A (en) | 2018-09-17 | 2018-09-17 | Realize the method and system, storage medium of data reliable read write |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109375869A true CN109375869A (en) | 2019-02-22 |
Family
ID=65405447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811082866.6A Pending CN109375869A (en) | 2018-09-17 | 2018-09-17 | Realize the method and system, storage medium of data reliable read write |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109375869A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010163A (en) * | 2019-04-16 | 2019-07-12 | 苏州浪潮智能科技有限公司 | A kind of data in magnetic disk holding capacity test method and relevant apparatus |
| CN112035060A (en) * | 2020-08-17 | 2020-12-04 | 合肥康芯威存储技术有限公司 | Error detection method and system for storage medium and storage system |
| CN112035060B (en) * | 2020-08-17 | 2024-04-26 | 合肥康芯威存储技术有限公司 | Error detection method and system for storage medium and storage system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901169A (en) * | 2010-03-23 | 2010-12-01 | 成都市华为赛门铁克科技有限公司 | Scanner and method |
| CN102708019A (en) * | 2012-04-28 | 2012-10-03 | 华为技术有限公司 | Method, device and system for hard disk data recovery |
| CN104346232A (en) * | 2013-08-06 | 2015-02-11 | 慧荣科技股份有限公司 | Data storage device and access limiting method thereof |
| CN104731522A (en) * | 2013-12-20 | 2015-06-24 | 慧荣科技股份有限公司 | Data storage device and data maintenance method thereof |
| CN107818025A (en) * | 2017-10-31 | 2018-03-20 | 郑州云海信息技术有限公司 | Hard disk cold data method of calibration, device, equipment and computer-readable recording medium |
| US9971530B1 (en) * | 2016-11-09 | 2018-05-15 | Sandisk Technologies Llc | Storage system and method for temperature throttling for block reading |
| CN108052414A (en) * | 2017-12-28 | 2018-05-18 | 湖南国科微电子股份有限公司 | A kind of method and system for promoting SSD operating temperature ranges |
| CN108228371A (en) * | 2016-12-15 | 2018-06-29 | 发那科株式会社 | Machine learning device and method, life predication apparatus, numerical control device |
-
2018
- 2018-09-17 CN CN201811082866.6A patent/CN109375869A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901169A (en) * | 2010-03-23 | 2010-12-01 | 成都市华为赛门铁克科技有限公司 | Scanner and method |
| CN102708019A (en) * | 2012-04-28 | 2012-10-03 | 华为技术有限公司 | Method, device and system for hard disk data recovery |
| CN104346232A (en) * | 2013-08-06 | 2015-02-11 | 慧荣科技股份有限公司 | Data storage device and access limiting method thereof |
| CN104731522A (en) * | 2013-12-20 | 2015-06-24 | 慧荣科技股份有限公司 | Data storage device and data maintenance method thereof |
| US9971530B1 (en) * | 2016-11-09 | 2018-05-15 | Sandisk Technologies Llc | Storage system and method for temperature throttling for block reading |
| CN108228371A (en) * | 2016-12-15 | 2018-06-29 | 发那科株式会社 | Machine learning device and method, life predication apparatus, numerical control device |
| CN107818025A (en) * | 2017-10-31 | 2018-03-20 | 郑州云海信息技术有限公司 | Hard disk cold data method of calibration, device, equipment and computer-readable recording medium |
| CN108052414A (en) * | 2017-12-28 | 2018-05-18 | 湖南国科微电子股份有限公司 | A kind of method and system for promoting SSD operating temperature ranges |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010163A (en) * | 2019-04-16 | 2019-07-12 | 苏州浪潮智能科技有限公司 | A kind of data in magnetic disk holding capacity test method and relevant apparatus |
| CN112035060A (en) * | 2020-08-17 | 2020-12-04 | 合肥康芯威存储技术有限公司 | Error detection method and system for storage medium and storage system |
| CN112035060B (en) * | 2020-08-17 | 2024-04-26 | 合肥康芯威存储技术有限公司 | Error detection method and system for storage medium and storage system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101608679B1 (en) | Torn write mitigation | |
| US10248515B2 (en) | Identifying a failing group of memory cells in a multi-plane storage operation | |
| JP2011521397A5 (en) | ||
| US11430540B2 (en) | Defective memory unit screening in a memory system | |
| CN102708019A (en) | Method, device and system for hard disk data recovery | |
| TW201044409A (en) | Data recovery in a solid state storage system | |
| CN111124758A (en) | Data recovery method for failed hard disk | |
| CN107799150A (en) | The error mitigation of 3D nand flash memories | |
| CN103019894B (en) | Reconstruction method for redundant array of independent disks | |
| CN109445982A (en) | Realize the data storage device of data reliable read write | |
| US20130166991A1 (en) | Non-Volatile Semiconductor Memory Device Using Mats with Error Detection and Correction and Methods of Managing the Same | |
| CN112632643A (en) | Method for preventing flash memory data loss, solid state disk controller and solid state disk | |
| CN107885620B (en) | Method and system for improving performance and reliability of solid-state disk array | |
| CN102929740A (en) | Method and device for detecting bad block of storage equipment | |
| US20060215456A1 (en) | Disk array data protective system and method | |
| CN103176859A (en) | Flash data backup/recovery method, equipment and signal source | |
| CN110444243A (en) | Store test method, system and the storage medium of equipment read error error correcting capability | |
| CN109284201A (en) | Temperature equalization data reconstruction method and system, storage medium | |
| CN109358984A (en) | The storage device of data recovery is carried out using temperature equalization data reconstruction method | |
| US20150255174A1 (en) | Memory testing method and apparatus | |
| CN109375869A (en) | Realize the method and system, storage medium of data reliable read write | |
| CN109460316A (en) | Data reconstruction method and system, storage medium based on temperature difference equilibrium | |
| CN113190179B (en) | Method for prolonging service life of mechanical hard disk, storage device and system | |
| US11593242B2 (en) | Method of operating storage device for improving reliability, storage device performing the same and method of operating storage using the same | |
| CN109358979A (en) | Application, system and storage medium of the temperature difference equalization methods in correcting data error |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190222 |