CN101931037A - GaN based LED epitaxial wafer, chip and device - Google Patents
GaN based LED epitaxial wafer, chip and device Download PDFInfo
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- CN101931037A CN101931037A CN2010102443580A CN201010244358A CN101931037A CN 101931037 A CN101931037 A CN 101931037A CN 2010102443580 A CN2010102443580 A CN 2010102443580A CN 201010244358 A CN201010244358 A CN 201010244358A CN 101931037 A CN101931037 A CN 101931037A
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Abstract
The embodiment of the invention discloses GaN based LED epitaxial wafer, chip and device with higher internal quantum efficiency. The epitaxial wafer comprises a P-type area, an N-type area and an active layer arranged between the P-type area and the N-type area, and the epitaxial is based on a nonpolar substrate; the active layer comprises a plurality of quantum well groups, each quantum well group comprises a quantum well, the quantum well comprises a barrier layer and a potential well layer, and the indium component concentration in the potential well layer of any one quantum well group is different from the indium component concentration in the potential well layers in other quantum well groups. According to the technical scheme, nonpolar GaN based materials can be prepared on the basis of the nonpolar substrate. Because the polarization effect of the nonpolar GaN based material is not strong, a built-in polarization electric field with higher intensity cannot be generated, and thereby the probability that electrons and hole wave functions shift towards both sides of the quantum wells and the overlapping of the electrons and hole wave functions decreases is reduced, and further the internal quantum efficiency and the luminous efficiency are improved.
Description
Technical field
The present invention relates to the LED preparing technical field, more particularly, relate to GaN base LED epitaxial wafer, chip and device.
Background technology
Multiple Quantum Well GaN base LED normally prepares by epitaxial growth C face (＜0001〉direction) GaN sill on the C of Sapphire Substrate face at present.Because the space structure of III-VI group nitride material does not have space center's inverting symmetry, and the electronegativity of the atom of V group element and N atom differs greatly, and therefore above-mentioned GaN sill has very strong polarity along＜0001〉direction, and produces polarity effect.This polarity effect will produce the higher built-in polarized electric field (piezoelectric field) of intensity, and can causing positive negative carrier (being electronics and hole), spatially separates above-mentioned built-in polarized electric field, cause the wave function in electronics and hole to be offset toward the both sides of quantum well respectively, and then cause electronics and hole wave function overlapping to tail off.Again because square being directly proportional of electronics and hole wave function overlapping integration, therefore again and then caused that GaN base LED internal quantum efficiency descends, the luminous efficiency reduction with internal quantum efficiency.
Summary of the invention
In view of this, the GaN base LED epitaxial wafer, chip and the device that provide internal quantum efficiency higher is provided embodiment of the invention purpose.
To achieve these goals, the embodiment of the invention provides following scheme:
A kind of GaN base LED epitaxial wafer, comprise p type island region, N type district and be arranged at p type island region and N type district between active layer, this epitaxial wafer is based on nonpolar substrate; Described active layer comprises a plurality of quantum well groups, comprises quantum well in the described quantum well group, and described quantum well comprises barrier layer and potential well layer, in the potential well layer of described arbitrary quantum well group in the potential well layer of indium constituent content and other quantum well groups the indium constituent content inequality.
A kind of GaN base LED chip that uses above-mentioned epitaxial wafer to prepare.
A kind of GaN base LED device that uses above-mentioned epitaxial wafer to prepare.
From above-mentioned technical scheme as can be seen, in embodiments of the present invention, can prepare the non-polar GaN sill based on nonpolar substrate.Because the polarity effect of non-polar GaN sill is not strong, just can not produce the higher built-in polarized electric field of intensity yet, thereby the probability that the both sides skew, electronics and the hole wave function that have reduced electronics and the sub-trap of hole wave functional vector overlap and tail off, and then internal quantum efficiency and luminous efficiency have been improved.In addition, in the potential well layer of above-mentioned arbitrary quantum well group in the potential well layer of indium constituent content and other quantum well groups the indium constituent content inequality, this can cause emission wavelength to produce certain difference, reduces influencing each other of light that different quantum well groups send, and then effectively improves the power of LED.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a Multiple Quantum Well LED structural representation;
The GaN base LED epitaxial wafer structural representation that Fig. 2 a provides for the embodiment of the invention;
Another structural representation of GaN base LED epitaxial wafer that Fig. 2 b provides for the embodiment of the invention;
The power curve contrast schematic diagram that Fig. 3 provides for the embodiment of the invention;
Fig. 4 peels off the led chip of preparing behind the nonpolar substrate for the embodiment of the invention.
Embodiment
For quote and know for the purpose of, hereinafter the technical term of Shi Yonging, write a Chinese character in simplified form or abridge and be summarized as follows:
Dust: 10 negative 10 power rice;
Mil: long measure, 1mil=mil;
LED:Light Emitting Diod, light-emitting diode;
In: indium;
Ga: gallium;
N: nitrogen;
MOCVD:Metal-organic Chemical Vapor Deposition, the metallo-organic compound chemical vapor deposition.
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
For conveniently understanding this programme, now the principle of luminosity of Multiple Quantum Well LED is simply introduced: as shown in Figure 1, the LED structure comprises N type district 1, active layer 2 and p type island region 3, when adding positive voltage, majority carrier electronics in majority carrier hole in the p type island region 3 and the N type district 1 moves to active layer 2, and is compound in the quantum well in active layer 2, produces the son that dams, the compound son that dams can produce photon, forms luminous.
Yet, be not that each all can produce photon to the compound son that dams of electron-hole pair, so just have a compound son that dams to convert the conversion efficiency problem of photon to.Can use internal quantum efficiency (η
Int) represent above-mentioned conversion efficiency, its computing formula is: η
IntNumber of photons/compound charge carrier the sum of=compound charge carrier generation) * 100%.
Therefore,, will improve internal quantum efficiency as much as possible, and the recombination probability of raising electron hole can improve above-mentioned internal quantum efficiency to a certain extent in order to improve light extraction efficiency.
The wave function in above-mentioned electron-hole recombinations probability and electronics, hole has substantial connection.Electronics, hole belong to particle, and particle has fluctuation, and its available wave function of moving is described.Wave function in the space any intensity (absolute value of amplitude square) and find the probability of particle to be directly proportional at this point.Also promptly, electronics and hole overlap many more in the wave function of a certain position, and it is just high more to show that then electronics and hole can come across the probability of a certain position simultaneously, and then the electron-hole recombinations probability is also high more, thereby internal quantum efficiency is also high more.
And traditional GaN base LED owing to be to prepare by epitaxial growth C face (＜0001〉direction) GaN sill on the C of Sapphire Substrate face, therefore has very strong polarity on along＜0001〉direction, and produces polarity effect.This polarity effect will produce the higher built-in polarized electric field of intensity, and above-mentioned built-in polarized electric field can cause that electronics spatially separates with the hole, cause the emission wavelength red shift, more serious consequence then is to cause the wave function in electronics and hole to be offset toward the both sides of quantum well respectively, and then causes electronics and hole wave function overlapping to tail off.Again because square being directly proportional of electronics and hole wave function overlapping integration, therefore again and then caused that GaN base LED internal quantum efficiency descends, the luminous efficiency reduction with internal quantum efficiency.
In view of this, the GaN base LED epitaxial wafer that provides internal quantum efficiency higher is provided embodiment of the invention purpose.
Above-mentioned epitaxial wafer comprises substrate, N type district, active layer and p type island region from the bottom to top, and wherein, described substrate is nonpolar substrate; Described active layer comprises a plurality of quantum well groups, comprises quantum well in the described quantum well group, and described quantum well comprises barrier layer and potential well layer, in the potential well layer of described arbitrary quantum well group in the potential well layer of indium constituent content and other quantum well groups the indium constituent content inequality.
As can be seen, can prepare the non-polar GaN sill based on nonpolar substrate.Because the polarity effect of non-polar GaN sill is not strong, just can not produce the higher built-in polarized electric field of intensity yet, thereby the probability that the both sides skew, electronics and the hole wave function that have reduced electronics and the sub-trap of hole wave functional vector overlap and tail off, again because therefore square being directly proportional with internal quantum efficiency of electronics and hole wave function overlapping integration improved the internal quantum efficiency and the luminous efficiency of the basic epitaxial wafer of above-mentioned GaN.
In addition, known, the photon energy of the material production that band gap is narrower is lower, wavelength is longer, and the photon energy of the material production of greater band gap is higher, wavelength is shorter.In the GaN sill, the indium components contents can influence band gap, and then influences the wavelength of luminous photon.In embodiments of the present invention, in the potential well layer of arbitrary quantum well group in the potential well layer of indium constituent content and other quantum well groups the indium constituent content inequality, this can cause the band gap difference of different quantum well groups, its luminous wavelength also just had certain difference, can reduce influencing each other of light that different quantum well groups send like this, and then effectively improve the power of LED.
Because there is various ways in the concrete structure of above-mentioned epitaxial wafer, is elaborated below by specific embodiment:
Fig. 2 a shows a kind of concrete structure of above-mentioned epitaxial wafer, and it comprises substrate 4, N type district 1, active layer 2 and p type island region 3 from the bottom to top, wherein:
Certainly, the quantity of above-mentioned quantum well group not only is confined to two, also can be other numerical value such as 3,4,5, and those skilled in the art can be arranged on this as required flexibly and not give unnecessary details.And, along N type district to the direction of p type island region, indium constituent content alternation gradually in the potential well layer of a plurality of quantum well groups.
In other embodiments of the invention, referring to Fig. 2 b, above-mentioned N type district 1 comprises N type GaN floor 11 and N type Al
xGa
yN covering 12, and above-mentioned p type island region 3 comprises p type Al
xGa
yN covering 31 and p type GaN layer 32, above-mentioned active layer 2 are arranged at N type GaN covering 12 and p type Al
xGa
yBetween the N covering 31, and the band gap of active layer 2 is less than the band gap of N type GaN covering 12.
Known, aluminium, indium, gallium are molfraction in the p type covering in the n type, common available formula Al
xGa
yN represents, wherein, and 0≤x≤1,0≤y＜1, and (x+y)≤1.In the present embodiment, for N type AlxGayN covering, x=0, y=1.
Can use MOCVD deposit epitaxial layers preparation on nonpolar substrate for GaN base LED epitaxial wafer among above-mentioned all embodiment.Above-mentioned nonpolar substrate can be selected lithium aluminate crystal (LiAlO for use
2) substrate, and preferably select the LiAlO2 substrate of (100) crystal face or (302) crystal face for use.Compare with traditional Sapphire Substrate, the mismatch degree of LiAlO2 substrate and GaN is little, and the mismatch degree is more little, and The built-in polarized electric field intensity is also more little.The surface of above-mentioned substrate should be smooth, and its r.m.s. roughness is more preferably less than 10 dusts preferably less than 20 dusts.
Its preparation flow is: at LiAlO
2Deposit N type GaN layer and N type A1 on the substrate successively
xGa
yThe N covering, and at N type Al
xGa
yThe many groups of deposition quantum well group on the N covering, wherein each group quantum well group comprises the Ga in a plurality of cycles
xIn
yThe N/GaN quantum well, this quantum well comprises Ga
xIn
yN potential well layer and GaN barrier layer, 0≤y≤1,0≤x＜1 wherein, and (x+y)≤1.And not in the quantum well group on the same group, indium constituent content difference in its potential well layer (being the value difference of x).The Changing Pattern of indium constituent content for by N district to P district successively decrease gradually (MOCVD can be by two kinds of methods realizations to the control of In constituent content, and a kind of is the flow of controlling the In source, and another kind is the control growing temperature).For example: can be at N type Al
xGa
yTwo groups of quantum well groups of deposition on the N covering, the quantum well in close N district is Ga
0.82In
0.18N/GaN, and the quantum well in close P district is Ga
0.91In
0.09N/GaN.
Fig. 3 shows based on LiAlO
2The quantum well in substrate and close N district is Ga
0.82In
0.18N/GaN and be Ga near the quantum well in P district
0.91In
0.09The power curve 301 of the led chip that N/GaN prepares and the comparison diagram of common LED chip power curve 302.Can find out that under the same electrical flow valuve, the power of the GaN base LED chip that the embodiment of the invention provided will be apparently higher than the common LED chip.And electric current is big more, and this trend is obvious more.
Use the disclosed epitaxial wafer of the arbitrary embodiment of above-mentioned all embodiment can be made into GaN base LED chip with positive and negative electrode.Press the position of electrode, can be divided into upper/lower electrode (vertical stratification) and electrode two kinds of homonymies (transversary).Certainly, also can adopt laser lift-off technique that substrate is peeled off, and utilize prior art to carry out follow-up respective handling and realize vertical stratification or transversary.
Fig. 4 promptly shows a kind of structure of peeling off the led chip of preparing behind the nonpolar substrate, comprises from bottom to up: N type GaN layer 11, N type Al
xGa
yN covering 12, quantum well group 21, quantum well group 22, p type Al
xGa
yN covering 31, p type GaN layer 32 and electrode 42, and N type GaN layer 11 size are slightly larger than N type Al
xGa
yN covering 12, it is not by N type Al
xGa
yThe part that N covering 12 covers is provided with electrode 41.
After processing such as led chip encapsulates, can prepare the LED device.The packing forms of led chip is a lot, at different instructions for uses and different photoelectric characteristic requirements, various packing forms is arranged, and concludes and gets up to have following several frequently seen form:
(1) soft encapsulation---chip directly is bonded in the specific PCB printed board, connects into specific character or display form by sealing wire, and with led chip and bonding wire transparent protective resin, is assembled in the specific shell.This soft encapsulation is usually used in digital demonstration, character demonstration or puts in the product of old demonstration.
(2) pinned encapsulation---common having is fixed on led chip on the 2000 serial lead frames, weld contact conductor after, with the certain transparent shape of epoxy resin enclosed one-tenth, become single led device.
(3) microencapsulated is paster encapsulation---led chip is bonded on the hypomegetic lead frame, weld contact conductor after, through injection mo(u)lding, exiting surface is generally used epoxy resin enclosed.
(4) dual in-line package---with the copper lead frame fixed chip of similar IC encapsulation, and seal with transparent epoxy welding electrode lead-in wire back, common " Piranha " formula encapsulation that chamber, the various different end is arranged and the encapsulation of super Piranha formula, this packaged chip heat leakage is better, thermal resistance is low, the input power of LED can reach 0.1W～0.5W greater than the pinned device, but cost is higher.
(5) power-type encapsulation---the packing forms of power LED is also a lot, its feature is that the chamber, the end of bonding chip is bigger, and has the direct reflection ability, it is high that conductive coefficient is wanted, and enough low thermal resistance is arranged, so that the heat in the chip is guided to outside the device apace, make chip and ambient temperature keep the lower temperature difference.The GaN sill that the embodiment of the invention provided is more suitable for preparing great power LED.Coating corresponding fluorescent material (for example yellow fluorescent powder) and sealing can be prepared high-brightness white-light LED on led chip.
The luminous electromagnetic spectrum that it should be noted that GaN sill involved in the present invention is the red ultraviolet portion that arrives.Above-mentioned N type GaN covering, N type GaN layer and the GaN barrier layer of mentioning all can be described as and is referred to as the GaN layer, and this GaN layer is non-polar plane, is non-polar material.
Above embodiment is the preferred embodiment that the present invention introduces, and those skilled in the art can design more preferred embodiment on this basis fully, for example, the thickness of potential well layer can be 1.0nm～6.0nm, and barrier layer thickness can be 8nm～12nm or the like, does not give unnecessary details at this.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
One of ordinary skill in the art will appreciate that all or part of flow process that realizes in the foregoing description method, be to instruct relevant hardware to finish by computer program, described program can be stored in the computer read/write memory medium, described program can comprise the flow process as the embodiment of above-mentioned each side method when carrying out.Wherein, described storage medium can be magnetic disc, CD, read-only storage memory body (Read-Only Memory, ROM) or at random store memory body (Random Access Memory, RAM) etc.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (9)
1. a GaN base LED epitaxial wafer comprises substrate, N type district, active layer and p type island region from the bottom to top, it is characterized in that:
Described substrate is nonpolar substrate;
Described active layer comprises a plurality of quantum well groups, and described quantum well group comprises quantum well, and described quantum well comprises barrier layer and potential well layer, in the potential well layer of described arbitrary quantum well group in the potential well layer of indium constituent content and other quantum well groups the indium constituent content inequality.
2. epitaxial wafer as claimed in claim 1 is characterized in that, along described N type district to the direction of described p type island region, indium constituent content alternation gradually in the potential well layer of described a plurality of quantum well groups.
3. epitaxial wafer as claimed in claim 1 is characterized in that, described potential well layer thickness is 1.0nm～6.0nm.
4. epitaxial wafer as claimed in claim 1 is characterized in that, described barrier layer thickness is 8nm～12nm.
5. epitaxial wafer as claimed in claim 1 is characterized in that, the periodicity of the included quantum well of described quantum well group is 3-10.
6. as the described epitaxial wafer of claim 1 to 5, it is characterized in that described N type district comprises N type Al
xGa
yN covering and N type GaN layer, described p type island region comprises p type GaN layer and p type Al
xGa
yN covering, described active layer are arranged at described N type GaN covering and described p type Al
xGa
yBetween the N covering.
7. epitaxial wafer as claimed in claim 6, described nonpolar substrate is specially the lithium aluminate crystal substrate, and described GaN layer is a non-polar plane.
8. one kind is used the GaN base LED chip that each described epitaxial wafer is prepared among the claim 1-7.
9. one kind is used the GaN base LED device that each described epitaxial wafer is prepared among the claim 1-7.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903808A (en) * | 2012-10-31 | 2013-01-30 | 合肥彩虹蓝光科技有限公司 | Shallow quantum well growth method for increasing light emitting efficiency of GaN-based LED (Light-Emitting Diode) |
| CN104518057A (en) * | 2013-09-27 | 2015-04-15 | 比亚迪股份有限公司 | Gan base led epitaxial wafer and forming method thereof |
| CN106653959A (en) * | 2016-11-24 | 2017-05-10 | 广东泓睿科技有限公司 | Manufacturing method of LED epitaxial wafer |
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