CN101924041A - 用于装配可堆叠半导体封装的方法 - Google Patents

用于装配可堆叠半导体封装的方法 Download PDF

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CN101924041A
CN101924041A CN2009101493202A CN200910149320A CN101924041A CN 101924041 A CN101924041 A CN 101924041A CN 2009101493202 A CN2009101493202 A CN 2009101493202A CN 200910149320 A CN200910149320 A CN 200910149320A CN 101924041 A CN101924041 A CN 101924041A
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substrate
semiconductor
boundary layer
conductive projection
mold materials
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CN101924041B (zh
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白志刚
陈伟民
王志杰
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NXP USA Inc
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Freescale Semiconductor Inc
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Abstract

本发明提供一种用于装配可堆叠半导体封装的方法,其包括提供具有第一表面和第二表面的衬底。所述第一表面包括键合焊盘和一个或多个管芯焊盘。在所述键合焊盘上形成导电凸块,并将一个或多个半导体管芯贴附到所述一个或多个管芯焊盘。将衬底的第一表面、半导体管芯和导电凸块放置在侧浇口制模铸件中,并向所述衬底的第一表面提供模具材料以形成可堆叠半导体封装。可以一个在另一个上地堆叠相似地形成的半导体封装,以形成堆叠半导体封装。

Description

用于装配可堆叠半导体封装的方法
技术领域
本发明一般涉及半导体封装,更具体地说,涉及一种用于装配堆叠半导体封装的方法和系统。
背景技术
诸如移动电话、个人数字助理(PDA)、和便携式计算机等的电子装置正在被设计为达到可能的最小尺寸。电子装置的小型化增加了对小型元件的占位面积(footprint)的需求。元件的占位面积被定义为电子装置中的元件所占用的空间。小型元件的占位面积增加了堆叠半导体封装的普及性。
堆叠半导体封装是帮助在保持高功能性和良好性能的同时使电子装置结构紧凑的高级封装技术。在堆叠封装中,将单个的半导体封装堆叠在其他半导体封装的顶上。每个半导体封装包括衬底和贴附在衬底的表面上并电连接到衬底的管芯。还利用塑封化合物(moldcompound)将所述管芯和电连接进行密封。所述塑封化合物保护管芯和电连接免受灰尘、湿气、机械应力等等的影响。在衬底上的键合焊盘上形成焊球。所述焊球为堆叠在第一封装上的第二封装提供电接口。由此,形成具有单个半导体封装的占位面积的密集型封装结构。
然而,第一封装与第二封装之间的距离、亦即衬底到衬底的距离应大于底部封装密封高度以便允许封装之间有良好的焊球互连。通常,衬底到衬底的距离等于焊球直径,且底部密封高度小于焊球直径。因此,焊球的高度必须大于密封的高度,这增大了堆叠封装的整体外形。
现在,参照图1,示出了图解用于模制半导体封装的传统中心浇口制模(center gate molding)设备100的示意图。中心浇口制模设备100包括流道102、浇口104、以及模套106。流道102与浇口104耦合在一起。浇口104位于模套106的中心处。半导体封装包括衬底108和贴附在衬底108上的半导体管芯110。衬底108经由引线键合而用引线112连接到管芯110。管芯110和引线112被设置在用于用塑封化合物114进行密封的模套106的腔体内部。流道102向浇口104供应塑封化合物114。塑封化合物114可以包括诸如环氧树脂和树脂等的非导电材料。其后,浇口104将塑封化合物114注入到模套106的腔体中以密封管芯110和引线112。一旦密封完成,则将浇口104分离。在分离期间,流道102和浇口104在模套106保持现在密封的管芯110的同时向上移动。然而,由于塑封化合物114本质上是粘质的,所以其能够粘在浇口104上。因此,浇口104的向上移动可能将塑封化合物114从封装的顶面拉脱,从而损坏封装。在某些情况下,管芯110的表面可能变成暴露的,这对封装的可靠性产生负面影响。
半导体封装设计的效率主要由衬底利用率来确定。然而,用上述设备,围绕管芯110的模套106占据相当数量的表面面积,这意味着衬底必须比所需要的大。这降低衬底利用率,并最终降低封装效率。此外,上述工艺需要基于管芯和封装尺寸的独特的制模设备,这增加成本并降低封装设计的灵活性。因此,理想的是,能够以可靠的方式来装配具有高效衬底利用率的可堆叠半导体封装。
附图说明
当结合附图来阅读时,将能更好地理解本发明的优选实施例的以下详细说明。本发明通过举例来说明,但并不限于附图,在所述附图中,相同的附图标记指示类似的元件。
图1是传统中心浇口制模设备的示意图;
图2A是根据本发明实施例的衬底的俯视图;
图2B是图2A的衬底的横截面侧视图;
图3A~3F是说明了根据本发明的实施例的半导体封装制造期间的各个阶段的示意图;
图4A~4F是说明了根据本发明的另一实施例的半导体封装制造期间的各个阶段的示意图;
图5是说明了根据本发明的实施例的侧浇口制模设备的示意图;
图6A是根据本发明的实施例的半导体封装的俯视图;
图6B是沿线A-A截取的图6A的半导体封装的横截面侧视图;
图6C是根据本发明的另一实施例的半导体封装的横截面侧视图;
图7A是根据本发明的可选实施例的半导体封装的俯视图;
图7B是图7A的半导体封装的横截面侧视图;
图8A和8B是说明了根据本发明的示例性实施例的堆叠半导体封装的装配的示意图;以及
图9是说明了根据本发明的实施例的用于装配堆叠半导体封装的方法的流程图。
具体实施方式
附图的详细说明旨在作为本发明的当前优选实施例的说明,并不旨在表示可以实施本发明的唯一形式。应理解的是,可以通过旨在被包括在本发明的精神和范围内的不同实施例来实现相同或等效功能。
在本发明的实施例中,一种用于装配堆叠半导体封装的方法包括提供具有第一表面和第二表面的第一衬底。第一表面包括多个键合焊盘和一个或多个管芯焊盘。在键合焊盘上形成多个导电凸块,并且在所述一个或多个管芯焊盘上贴附一个或多个半导体管芯。第一衬底被设置在侧浇口制模铸件中。所述制模铸件围绕第一衬底的第一表面、半导体管芯、以及导电凸块。模具材料被提供给第一衬底的第一表面。所述模具材料完全覆盖半导体管芯并至少部分地覆盖导电凸块。此外,每个导电凸块的一部分被暴露以提供到第二半导体封装的电连接。由此,形成具有第一边界层和第二边界层的第一半导体封装。由模具材料的第一表面和所述多个导电凸块的暴露部分勾勒出第一边界层的轮廓。由第一衬底的第二表面勾勒出第二边界层的轮廓。
在本发明的另一实施例中,提供了一种用于装配堆叠半导体封装的系统。所述用于装配堆叠半导体封装的系统包括保持具有第一和第二表面的第一衬底的平台。所述第一表面包括多个键合焊盘和一个或多个管芯焊盘。用于形成多个导电凸块的装置在所述多个键合焊盘上形成多个导电凸块。用于贴附一个或多个半导体管芯的装置在所述一个或多个管芯焊盘上贴附一个或多个半导体管芯。该系统还包括用于容纳第一衬底的侧浇口制模铸件。所述制模铸件覆盖第一衬底的第一表面、所述一个或多个半导体管芯、以及所述多个导电凸块。用于提供模具材料的装置向第一衬底的第一表面提供模具材料。所述模具材料完全覆盖半导体管芯,并至少部分地覆盖导电凸块。所述多个导电凸块中的每一个的一部分被暴露以提供到第二半导体封装的电连接。由此,形成具有第一边界层和第二边界层的第一半导体封装。由模具材料的第一表面和所述多个导电凸块的暴露部分勾勒出第一边界层的轮廓。由第一衬底的第二表面勾勒出第二边界层的轮廓。
本发明的实施例提供了一种用于装配堆叠半导体封装的方法和系统。使用侧浇口制模工艺来在第一表面上提供模具材料,这减轻由于模具材料的粘结性而引起的风险,并因此而增加封装可靠性。另外,所述侧浇口制模工艺消除对在衬底的表面上放置模具模套的需要,从而允许提高衬底利用率和封装效率。管芯焊盘的腔体设计有利于模具材料在衬底的第一表面上的均匀分布。将管芯放置在腔体中消除对大直径导电凸块的需要,这有利地减小半导体封装的外形,并因此而减小堆叠封装整体的外形。另外,本发明有利于用于模制规格和尺寸变化的半导体封装的统一制模铸件的使用,这降低半导体封装的制造成本,并提供封装设计方面的增强的灵活性。在本发明的一个实施例中,所述制模铸件还使导电凸块经受可变式变形,以影响半导体封装的统一的外形。
现在,参照图2A,示出了根据本发明的实施例的衬底200的俯视图。如本领域中公知的那样,衬底200可以包括各种形式,诸如带状衬底或层压衬底,并可以具有多个导电和绝缘层。衬底200包括设置在衬底200的第一表面206的中心附近的管芯焊盘202。在本发明的实施例中,如图2B所示,管芯焊盘202包括被配置为容纳半导体管芯的腔体。衬底200还包括诸如键合焊盘204的多个键合焊盘,其位于衬底200的第一表面206的外围附近。第一表面206也被称为衬底200的顶部表面或活性表面(active surface)。在本发明的示例性实施例中,管芯焊盘202和键合焊盘204由铜制成。
现在,参照图2B,根据本发明的实施例,示出了衬底200的示意性横截面侧视图。衬底200还包括多个衬底焊盘208。衬底焊盘208用衬底200中的一个或多个电镀通孔、实心导通孔或某些其它导体而电连接到键合焊盘204,并位于衬底200的第二或底部表面210上。在本发明的实施例中,衬底200的第二表面210上的衬底焊盘208被暴露以提供用于允许连接到一个或多个其它半导体器件的电连接。
现在,参照图3A~3F,根据本发明的实施例,示出了说明半导体封装的制造工艺的各个阶段的示意图。
最初,如图3A所示,在衬底200的第一表面206的键合焊盘204上形成多个导电凸块302。导电凸块302由诸如导电金属的导电材料制成。在本发明的一个实施例中,导电凸块302包括焊球。在本发明的各种实施例中,可以用诸如凸块贴附机(bump attach machines)(未示出)的用于形成导电凸块302的装置来在键合焊盘204上形成导电凸块302。此类凸块贴附机的示例包括,但不限于HANMI BMS-500和MMS-MSA-250A。
现在,参照图3B,在衬底200的第一表面206上的管芯焊盘202上贴附一个或多个半导体管芯304。在本发明的各种实施例中,可以使用诸如管芯键合机(未示出)的用于贴附半导体管芯304的装置来在管芯焊盘202上贴附半导体管芯304。适当管芯键合机的示例包括但不限于ESEC-2008管芯键合机。如图3B所示,半导体管芯304被贴附在管芯焊盘202上,使得半导体管芯304的钝化表面(passive surface)304a面对管芯焊盘202的内部,并且使得半导体管芯304的活性表面304b基本上与衬底200的第一表面206共面。
现在,参照图3C,在本发明的一个实施例中,使用引线键合工艺将半导体管芯304电连接到衬底200。在本发明的实施例中,用于贴附半导体管芯304的装置还用多根键合引线306来将半导体管芯304与衬底200电连接。如本领域中公知的那样,键合引线306可以包括金、铝和/或铜引线。
在本发明的各种可选实施例中,管芯焊盘202可以与衬底200的第一表面206共面,并且可以使用参照图3B和3C而描述的步骤在管芯焊盘202上贴附半导体管芯。
在本发明的另一实施例中,管芯焊盘202可以与第一表面206共面,因此,可以使用倒装芯片技术在管芯焊盘202上贴附并电连接半导体管芯。此外,可以用诸如带式自动键合(TAB)的各种其它工艺来贴附半导体管芯304并将其与衬底200电连接。
现在,参照图3D和3E,在导电凸块302上设置有侧浇口制模铸件308以覆盖衬底200的第一表面206、导电凸块302、以及半导体管芯304。如图3D和3E所示,制模铸件308具有平面表面,该平面表面随着制模铸件308压向凸块302而使导电凸块302部分地变形。
现在,参照图3F,在将制模铸件308保持在导电凸块302上的同时,向衬底200的第一表面206提供模具材料310。在本发明的实施例中,模具材料310可以包括树脂、环氧树脂、以及防潮氰酸酯(MRCE)之一。在本发明的各种实施例中,用于提供模具材料的装置向衬底200的第一表面206提供模具材料。模具材料310覆盖半导体管芯304。此外,由于在导电凸块302上放置制模铸件308,所以模具材料310至少部分地覆盖导电凸块302。导电凸块302的一部分,即,暴露部分312被暴露以允许到另一半导体封装的电连接。如图3F所示,导电凸块302的暴露部分312基本上与模具材料310的第一表面共面。
现在,参照图4A~4F,示出了说明根据本发明的另一实施例的半导体封装的制造工艺的各个阶段的示意图。
最初,如图4A所示,在衬底200的第一表面206上的键合焊盘204上形成多个导电凸块402。如图4B所示,在衬底200的第一表面206上的管芯焊盘202上贴附一个或多个半导体管芯404。如图4B所示,半导体管芯404被贴附在管芯焊盘202上,使得半导体管芯404的钝化表面404a面对并被贴附到管芯焊盘202,并且使得半导体管芯404的活性表面404b基本上与衬底200的第一表面206共面。
参照图4C,用多根键合引线406将半导体管芯404与衬底200电连接。
参照图4D和4E,在导电凸块302上放置侧浇口型制模铸件408以覆盖衬底200的第一表面206、导电凸块402、以及管芯404。制模铸件408包括容纳导电凸块402的至少一个部分的多个凹槽410,其允许凸块402即使当在凸块402上向下按压制模铸件408时,也至少基本保持其椭圆形状。
参照图4F,在将制模铸件408保持在导电凸块402上的同时,向衬底200的第一表面206提供模具材料412。模具材料412覆盖半导体管芯404,并至少部分地覆盖导电凸块402,使得导电凸块402的一部分,即,暴露部分414未被模具材料412覆盖,这允许到另一半导体封装的电连接(未示出)。导电凸块402的暴露部分414在模具材料412的表面之上突出。
现在,参照图5,示出了说明根据本发明的实施例的侧浇口制模设备500的示意图。侧浇口制模设备500包括平台502和多个浇口504。在平台502的顶面上安装多个衬底506。在本发明的实施例中,每个衬底506包括在其上面形成的多个导电凸块和贴附到每个衬底506的至少一个半导体管芯。该管芯通过电互连而与衬底电连接。在衬底506的导电凸块上放置诸如(上述)制模铸件308或408的共用制模铸件。其后,通过浇口504向衬底506的第一表面提供模具材料。通过毛细管作用而将该模具材料均匀地散布在衬底506的第一表面上。虽然示出了四个浇口504和八个衬底,但本领域的技术人员应理解的是所述制模设备可以包括更少或更多的浇口,并且可以将更少或更多的衬底放入制模设备500。
根据本发明的各种实施例,可以用锯(未示出)沿着分离线A-A、B-B、C-C、以及D-D执行切割操作,以便将衬底506相互分离。所述锯可以包括用来切割衬底506的细喷嘴。然而,本领域的技术人员应认识到本发明不限于所采用的切割技术。例如,还可以通过可选实施例中的冲孔、或激光切割、或其它适当切割方法来切割衬底200。
现在,参照图6A和6B,根据本发明的实施例,分别示出了说明半导体封装600的俯视图和横截面侧视图的示意图。半导体封装600具有第一边界层602和第二边界层604。半导体包装600包括衬底606、在衬底606上形成的多个导电凸块608、以及贴附在衬底606上的半导体管芯610。模具材料612覆盖半导体管芯610,并且至少部分地覆盖导电凸块608,一部分导电凸块被暴露以用于提供到另一半导体封装的电连接。由模具材料612的第一表面和导电凸块608的暴露部分勾勒出第一边界层602的轮廓,并由第一衬底606的第二表面勾勒出第二边界层604的轮廓。如图6B所示,每个导电凸块608的暴露部分基本上与第一边界层602上的模具材料612的第一表面共面。
图6C是说明根据本发明的可选实施例的半导体封装620的横截面侧视图的示意图。类似于封装600,封装620包括第一和第二边界层602和604、衬底606、贴附在衬底606上的半导体管芯610、以及覆盖衬底606和半导体管芯610的模具材料612。封装620还包括从模具材料612和在第一边界层602之上部分地突出的暴露导电凸块622。
现在,参照图7A和7B,根据本发明的可选实施例,分别示出了说明半导体封装700的俯视图和横截面侧视图的示意图。半导体封装700具有第一边界层702和第二边界层704,其与图6A和6B所示的封装600的边界层602和604类似。半导体包装封装700还包括衬底706、在衬底706上形成的多个导电凸块708、以及贴附到衬底706的表面的半导体管芯710。如图7B所示,如本领域的技术人员所公知的那样,半导体管芯710是倒装芯片型管芯并且通过使管芯的活性表面面朝下,而被贴附且电连接到衬底706。模具材料712覆盖半导体管芯710并至少部分地覆盖导电凸块708,一部分导电凸块被暴露以提供到另一半导体封装的电连接。如图7B所示,导电凸块708的暴露部分基本上与第一边界层702上的模具材料712的第一表面共面。然而,在本发明的其它实施例中,每个导电凸块708的暴露部分可以从第一边界层702上的模具材料712的第一表面突出。
现在,参照图8A和8B,根据本发明的示例性实施例,示出了说明堆叠半导体封装800的装配的示意图。堆叠半导体封装800包括多个半导体封装,在本例中,包括三个半导体封装802、804和806。所示实施例的封装802和804与图6A和6B所示的封装600类似。然而,还可以同样地堆叠类似于上述封装620和700的封装。半导体封装806是堆栈中的最顶部封装。因此,不在半导体封装802的衬底的键合焊盘上形成导电凸块。
半导体封装802、804和806被一个覆盖另一个地放置,使得它们通过其各自的导电凸块而相互进行直接电接触。用于堆叠半导体封装的机器在本领域中是公知的。例如,可以用西门子SIPLACE X4i射片机将半导体封装一个覆盖另一个地堆叠起来。虽然图8A和8B示出了包括三个半导体封装的堆叠半导体封装,但是,显然,可以堆叠任何所需数目的半导体封装。
现在,参照图9,根据本发明的实施例,示出了说明用于装配堆叠半导体封装的方法的流程图。
在步骤902,提供具有第一表面和第二表面的衬底。该衬底的第一表面包括多个键合焊盘和一个或多个管芯焊盘。在本发明的实施例中,键合焊盘位于衬底的外围附近并围绕管芯焊盘。在本发明的另一实施例中,至少一个管芯焊盘包括使得尺寸和形状合适于容纳半导体管芯的腔体。
在步骤904,在多个键合焊盘上形成多个导电凸块。在本发明的实施例中,所述导电凸块是诸如焊球的金属球状物。在本发明的另一实施例中,如参照图3A所讨论的,使用凸块贴附机来形成导电凸块。
在步骤906,将一个或多个半导体管芯贴附在衬底的第一表面上的管芯焊盘上。在本发明的实施例中,将半导体管芯贴附到管芯焊盘,使得半导体管芯的钝化表面面对管芯焊盘的内部,且半导体管芯的活性表面保持基本上与衬底的第一表面共面。在本发明的各种实施例中,使用引线键合工艺和带式自动键合(TAB)工艺中的至少一个来贴附并电连接半导体管芯和衬底。
在步骤908,将衬底放置在侧浇口型制模铸件中。所述制模铸件覆盖衬底的第一表面、导电凸块和半导体管芯。在本发明的实施例中,该制模铸件可以具有平面设计以使导电凸块部分地变形。在本发明的另一实施例中,该制模铸件包括多个凹槽以容纳导电凸块的至少一部分。
在步骤910,经由侧浇口向衬底的第一表面提供模具材料。所述模具材料可以包括树脂、环氧树脂、以及防潮氰酸酯(MRCE)之一。该模具材料覆盖半导体管芯并部分地覆盖导电凸块,每个导电凸块的一部分被暴露以提供到另一半导体封装的电连接。在本发明的实施例中,每个导电凸块的暴露部分可以基本上与模具材料的第一表面共面。在本发明的另一实施例中,每个导电凸块的暴露部分可以从模具材料的第一表面突出。由此,形成诸如半导体封装600的第一半导体封装,其具有第一边界层和第二边界层。
在本发明的各种实施例中,通过在第一半导体封装的第一边界层之上堆叠第二半导体封装而形成堆叠半导体封装。所述第二半导体封装包括第三边界层和第四边界层。第二半导体封装的第四边界层被堆叠在第一半导体封装的第一边界层之上,使得它们相互进行直接电接触。
虽然已说明并描述了本发明的各种实施例,但是,显然,本发明不仅仅局限于这些实施例。如权利要求书所述,在不脱离本发明的精神和范围的情况下,许多修改、改变、变体、替换、以及等价物对本领域的技术人员来说将是显而易见的。

Claims (10)

1.一种用于装配可堆叠半导体封装的方法,包括:
提供具有第一表面和第二表面的衬底,其中,所述第一表面包括用于贴附一个或多个半导体管芯的一个或多个管芯焊盘和多个键合焊盘;
在所述一个或多个管芯焊盘上贴附所述一个或多个半导体管芯;
在所述多个键合焊盘上形成多个导电凸块;
将衬底放置在侧浇口制模铸件中,使得所述制模铸件围绕所述衬底的第一表面、所述一个或多个半导体管芯和所述多个导电凸块;以及
经由所述制模铸件的侧浇口来向所述衬底的第一表面提供模具材料,其中,所述模具材料覆盖所述一个或多个半导体管芯,并至少部分地覆盖所述多个导电凸块,其中,所述多个导电凸块中的每一个的一部分被暴露以提供到第二半导体封装的电连接,
由此,形成包括第一边界层和第二边界层的第一半导体封装,由所述模具材料的第一表面和所述多个导电凸块的暴露部分勾勒出所述第一边界层的轮廓,并由所述衬底的第二表面勾勒出所述第二边界层的轮廓。
2.根据权利要求1所述的用于装配可堆叠半导体封装的方法,其中,所述管芯焊盘的每个包括用于容纳半导体管芯的腔体,其中,所述半导体管芯的钝化表面面对所述腔体的内部,且所述半导体管芯的活性表面基本上与所述衬底的第一表面共面。
3.根据权利要求1所述的用于装配可堆叠半导体封装的方法,其中,使用倒装芯片技术将所述一个或多个半导体管芯贴附在所述一个或多个管芯焊盘上。
4.根据权利要求1所述的用于装配可堆叠半导体封装的方法,其中,所述制模铸件包括多个凹槽以容纳所述多个导电凸块的至少一部分,使得所述多个导电凸块中的每一个的暴露部分从所述第一边界层上的所述模具材料的第一表面突出。
5.根据权利要求1所述的用于装配可堆叠半导体封装的方法,其中,所述制模铸件具有平面设计以使所述多个导电凸块部分地变形,使得所述多个导电凸块中的每一个的暴露部分基本上与所述第一边界层上的所述模具材料的第一表面共面。
6.一种用于装配可堆叠半导体封装的系统,包括:
平台,所述平台用于保持衬底,所述衬底具有第一表面和第二表面,其中,所述第一表面包括用于贴附一个或多个半导体管芯的一个或多个管芯焊盘和多个键合焊盘;
用于在所述衬底的第一表面上的所述多个键合焊盘上形成多个导电凸块的装置;
用于在所述衬底的第一表面上的所述一个或多个管芯焊盘上贴附所述一个或多个半导体管芯的装置;
侧浇口制模铸件,所述侧浇口制模铸件用于容纳所述衬底,其中,所述制模铸件覆盖所述衬底的第一表面、所述一个或多个半导体管芯和所述多个导电凸块;以及
用于通过侧浇口向所述衬底的第一表面提供模具材料的装置,其中,所述模具材料完全覆盖所述一个或多个半导体管芯,并部分地覆盖所述多个导电凸块,其中,所述多个导电凸块中的每一个的一部分被暴露以提供到第二半导体封装的电连接,
由此,形成包括第一边界层和第二边界层的半导体封装,由所述模具材料的第一表面和所述多个导电凸块的暴露部分勾勒出所述第一边界层的轮廓,并由所述衬底的第二表面勾勒出第二边界层的轮廓。
7.根据权利要求6所述的用于装配可堆叠半导体封装的系统,其中,所述一个或多个管芯焊盘的每个包括用于容纳所述半导体管芯的腔体,其中,所述半导体管芯的钝化表面面对所述腔体的内部,并且所述半导体管芯的活性表面基本上与所述第一衬底的第一表面共面。
8.根据权利要求6所述的用于装配可堆叠半导体封装的系统,其中,所述用于贴附所述一个或多个半导体管芯的装置使用引线键合工艺和带式自动键合(TAB)工艺中的至少一个来将所述一个或多个半导体管芯与第一衬底电连接。
9.根据权利要求6所述的用于装配可堆叠半导体封装的系统,其中,所述制模铸件包括多个凹槽,以容纳所述多个导电凸块的至少一部分,使得所述多个导电凸块中的每一个的暴露部分从所述第一边界层上的所述模具材料的第一表面突出。
10.根据权利要求6所述的用于装配可堆叠半导体封装的系统,其中,所述制模铸件具有平面设计,以使所述多个导电凸块部分地变形,使得所述多个导电凸块中的每一个的暴露部分基本上与所述第一边界层上的所述模具材料的第一表面共面。
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