CN101923412A - Touch screen and manufacture method thereof - Google Patents
Touch screen and manufacture method thereof Download PDFInfo
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- CN101923412A CN101923412A CN2009102037828A CN200910203782A CN101923412A CN 101923412 A CN101923412 A CN 101923412A CN 2009102037828 A CN2009102037828 A CN 2009102037828A CN 200910203782 A CN200910203782 A CN 200910203782A CN 101923412 A CN101923412 A CN 101923412A
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Abstract
The invention provides a touch screen and a manufacture method thereof. The manufacture method comprises the following steps of: forming a transparent conducting layer and forming a metal layer on the transparent conducting layer; meanwhile, patterning the transparent conducting layer and the metal layer; and generating a first pattern and a second pattern (the second pattern is connected to the outer edge of the first pattern) on each layer and removing the first pattern of the metal layer.
Description
Technical field
The invention relates to a kind of touch-screen and manufacture method thereof, particularly about a kind of capacitive touch screen and manufacture method thereof.
Background technology
Be to promote modern's convenience, user-centered interface gos deep into our daily life day by day, and touch-screen is popularized application such as all kinds of industry and commerce, amusement, information thereupon, for example cash machine, laptop computer, mobile phone, and guide system etc.At present, touch-screen roughly is divided into four kinds according to the difference of know-why: resistance-type, condenser type, ultrasonic formula and optical profile type touch-screen etc.
Wherein, the principle of capacitive touch screen is to utilize finger or other electric conductors to touch and the generation capacitive sensing, so the touch-control sensing performance is very good.Recently, more because Apple iPhone Products Development further drives the agitation of capacitive touch screen, and is applied to the consumption electronic products of small-sized high unit price.
Fig. 1 is the simplification processing procedure of illustration known capacitance formula touch-screen.See also Fig. 1, a plain glass (plain glass) pan feeding (step s101) at first is provided, as the substrate of other conductive materials of deposition; Utilize rubbing method (for example sputtering method) and little shadow and etching method, on the fringe region of this substrate, form alignment mark (step s102).Then,, can utilize rubbing method, for example utilize sputtering method, form an ITO (indium tin oxide, tin indium oxide) layer (step s103) thereon in order on substrate, to form a plurality of unit touch-screen; Utilize this ITO layer of little shadow and etching decree to form ITO longitudinal electrode (step s104); Utilize rubbing method to form a dielectric layer thereon as insulation course (step s105); Utilize rubbing method to form an ITO layer (step s106) thereon again; Utilize this ITO layer of little shadow and etching decree to form ITO transverse electrode (step s107); Utilize rubbing method to form a metal level (step s108) thereon; Utilize this metal level of little shadow and etching decree to form the pattern (step s109) of metal routing; Utilize rubbing method to form a protective seam (step s110), its material can be silicon nitride (SiNx), silicon oxynitride (SiNxOy), monox (SiOx) or acryl resin (Acrylic resin); Utilize little shadow and etching method to form opening (step s111), make above-mentioned metal routing that electric connection place that is provided signal to send outside is provided; Then these structures form a capacitive touch screen and discharging (step s112).
Therefore, above-mentioned ITO longitudinal electrode, insulation course, and the formed capacitance structure of ITO transverse electrode, the electric current that touching is produced for external electric conductor (for example finger) changes the position that can accurately extrapolate X-axis and Y-axis; And above-mentioned metal routing is the purposes as signal conduction.Therefore, must be by above-mentioned steps s106 to s109 to connect ITO electrode and metal routing.
Yet,, in the middle of the touch-screen processing procedure, patterns such as accurate electrode of multiple tracks mask definition and cabling need be arranged in order to form accurate ITO electrode and metal routing.For example, please refer to Fig. 2, it is the mask synoptic diagram in the known capacitance formula touch-screen processing procedure, and main expression is at the mask design of unit touch-screen.As shown in Figure 2, known touch-screen processing procedure must utilize accurate a plurality of electrode pattern p1 (with reference to figure 2 (a)) of mask m1 definition and accurate many cabling pattern p2 (with reference to figure 2 (b)) of mask m2 definition respectively.Therefore, in above-mentioned known processing procedure, four road masks such as definition alignment mark, longitudinal electrode, transverse electrode and metal routing need be arranged at least, also may need the mask of definition protective seam opening in addition.In addition,, in the middle of processing procedure, need, make mask can reach accurate effect of aiming at alignment mark on the substrate by the higher board of precision in order to reach the purpose that ITO electrode and metal routing accurately link to each other.Therefore, the spent cost of this processing procedure is very high, but resolution and Aligning degree are still probably limited.
Summary of the invention
Because the problem of the relevant contraposition precision of prior art, the inventor proposes touch-screen of the present invention and manufacture method thereof after ruminating over.The manufacture method of touch-screen of the present invention, main patterned transparent conductive layer and the metal level simultaneously of utilizing, then remove the pattern that is specific to transparency conducting layer in this metal level, to reach the effect of self-aligned in the patterning process, to increase the contraposition precision of electrically conducting transparent layer pattern and metal layer pattern.Therefore, manufacture method of the present invention can fully be reduced to and reach the cost that contraposition precisely expends, and can reach more superior contraposition precision and patterning resolution.Therefore, touch-screen of the present invention still has quite good touch-control sensing performance.
First conception of the present invention is to provide a kind of manufacture method of touch-screen.This manufacture method comprises following steps: form a transparency conducting layer, form a metal level on this transparency conducting layer, while this transparency conducting layer of patterning and this metal level, then each layer is indivedual produces one first pattern and one second pattern (this second pattern system is connected in the outer rim of this first pattern), and this first pattern of removing this metal level.
Preferably, this method provided by the present invention, wherein this transparency conducting layer is to be formed on the substrate.
Preferably, this method provided by the present invention, this first pattern pattern that is a plurality of electrodes wherein, this second pattern is the pattern of many cablings.In those patterns, an end of those many cablings is signal output place that distinctly is connected in those a plurality of electrodes.
Preferably, this method provided by the present invention wherein is to utilize little shadow and etching method with this transparency conducting layer of while patterning and this metal level.Wherein, this lithography process shows those patterns on this transparency conducting layer and this metal level, and those patterns are to define via a mask; Moreover this etching method is removed the zone that does not show those patterns of this transparency conducting layer and this metal level.
Preferably, this method provided by the present invention, wherein this utilizes little shadow and etching method to comprise following steps with the process of this transparency conducting layer of while patterning and this metal level: be coated with a photosensitive material layer on this metal level, utilize this mask of those patterns of definition to expose, on this photosensitive material layer, to develop, according to this this transparency conducting layer of photosensitive material layer etching and this metal level through developing, and removal this photosensitive material layer through developing.
Preferably, this method provided by the present invention wherein be to coat on this metal level as this photosensitive material layer with a positive photoresist layer, and this mask is to utilize a light shielding part to define those patterns.
Preferably, this method provided by the present invention wherein is to coat on this metal level as this photosensitive material layer with a negative photoresist layer, and this mask utilizes a transmittance section to define those patterns.
Preferably, this method provided by the present invention wherein is to utilize little shadow and wire mark method one of them and selective etch method to remove this first pattern of this metal level.Wherein, one of them shows a reserved area on this metal level by this lithography process and this wire mark method, and this reserved area does not comprise the distribution range of this first pattern part but comprises the distribution range of this second pattern part at least; This selective etch method is removed the part that does not show this reserved area of this metal level.
Preferably, this method provided by the present invention, wherein this utilizes little shadow and selective etch method to comprise following steps with the process of this first pattern part of removing this metal level: be coated with a photosensitive material layer on this metal level, utilize a mask of this reserved area of definition to expose, and on this sensitization material layer, develop, with this metal level of selective etch, and remove this photosensitive material layer according to this photosensitive material layer through developing through developing.
Preferably, this method provided by the present invention wherein be to coat on this metal level as this photosensitive material layer with a positive photoresist layer, and this mask is utilized a light shielding part to define this zone.
Preferably, this method provided by the present invention wherein be to coat on this metal level as this photosensitive material layer with a negative photoresist layer, and this mask is utilized a transmittance section to define this zone.
Preferably, this method provided by the present invention, wherein this utilizes wire mark and selective etch method to comprise following steps with the process of this first pattern of removing this metal level: utilize wire mark coating one anti-etching material layer on this metal level, make this anti-etching layer of material covers in this reserved area of this metal level, selective etch is without this metal level that covers, and removal should anti-etching material layer.
Second conception of the present invention is to provide a kind of manufacture method of touch-screen.This manufacture method comprises following steps: a substrate is provided, form at least one pair of mark (alignment mark) on the fringe region of this substrate, form one first transparency conducting layer on this substrate, this first transparency conducting layer of patterning is to produce a plurality of electrodes of arranging along a first direction, form a dielectric layer on those a plurality of electrodes, form one second transparency conducting layer on this dielectric layer, form a metal level on this second transparency conducting layer, simultaneously this second transparency conducting layer of patterning and this metal level be with the pattern that makes those layers all produce being a plurality of electrodes of arranging along a second direction and the pattern that is many cablings (end of those cablings distinctly is connected in signal output place of those a plurality of electrodes of arranging along this second direction), and this pattern that is those a plurality of electrodes of this metal level of removal.
Preferably, this method provided by the present invention wherein is to utilize little shadow and etching method to form this alignment mark, and defines the pattern of this alignment mark with a mask.
Preferably, this method provided by the present invention wherein is those a plurality of electrodes that utilize little shadow and this first transparency conducting layer of etching method patterning to arrange along this first direction with generation, and defines the pattern of those a plurality of electrodes with a mask.
Preferably, this method provided by the present invention, wherein be to utilize little shadow and etching method this second transparency conducting layer of patterning and this metal level simultaneously, and be this pattern of a plurality of electrodes of arranging along this second direction and be this patterns of those many cablings with mask definition.
Preferably, this method provided by the present invention, wherein be to utilize little shadow and etching method to remove this pattern that is those a plurality of electrodes of this metal level, show that by this lithography process a reserved area is on this metal level, this reserved area does not comprise the distribution range of this pattern that is those a plurality of electrodes but comprises the distribution range of this pattern that is those many cablings at least that this etching method is removed the part that does not show this reserved area of this metal level.
Preferably, this method provided by the present invention, wherein be to utilize wire mark and etching method to remove this pattern that is those a plurality of electrodes of this metal level, this wire mark method shows that a reserved area is on this metal level, this reserved area does not comprise the distribution range of this pattern that is a plurality of electrodes of arranging along this second direction but comprises the distribution range of this pattern that is those many cablings at least that this etching method is removed the part that does not show this reserved area of this metal level.
Preferably, this method provided by the present invention, other comprises: form a protective seam on patterned this second transparency conducting layer and this metal level.
Preferably, this method provided by the present invention wherein is to utilize little shadow and this protective seam of etching method patterning, and defines an opening with a mask that this opening makes those metal routings expose.
The 3rd conception of the present invention is to provide a kind of manufacture method of touch-screen.This manufacture method comprises following steps: a substrate is provided, form one first transparency conducting layer on this substrate, form a metal level on this first transparency conducting layer, this first transparency conducting layer of patterning and this metal level are along a pattern of a plurality of electrodes of first direction arrangement to make those layers all produce simultaneously, the pattern and at least one contraposition mark that are many cablings, remove this pattern that is those a plurality of electrodes of this metal level, form a dielectric layer on patterned this first transparency conducting layer and this metal level, form one second transparency conducting layer on this dielectric layer, and this second transparency conducting layer of patterning is to produce a plurality of electrodes of arranging along a second direction.Wherein, those first or signal output place of a plurality of electrodes of arranging of second direction distinctly be connected in an end of those cablings.
Preferably, this method provided by the present invention, wherein be to utilize little shadow and etching method this first transparency conducting layer of patterning and this metal level simultaneously, and be along this pattern, this pattern that is those many cablings and this alignment mark of a plurality of electrodes of this first direction arrangement with mask definition.
Preferably, this method provided by the present invention, wherein be to utilize little shadow and etching method to remove this pattern that is those a plurality of electrodes of this metal level, show that by this lithography process a reserved area is on this metal level, this reserved area does not comprise and is along the distribution range of this pattern of those a plurality of electrodes but comprises the distribution range of this pattern that is those many cablings at least that this etching method is removed the part that does not show this reserved area of this metal level.
Preferably, this method provided by the present invention, wherein be to utilize wire mark and etching method to remove this pattern that is those a plurality of electrodes of this metal level, this wire mark method shows that a reserved area is on this metal level, this reserved area does not comprise the distribution range of this pattern that is a plurality of electrodes of arranging along this second direction but comprises the distribution range of this pattern that is those many cablings at least that this etching method is removed the part that does not show this reserved area of this metal level.
Preferably, this method provided by the present invention wherein is to utilize little shadow and this second transparency conducting layer of etching method patterning, and is along this pattern of a plurality of electrodes of this second direction arrangement with mask definition.
Preferably, this method provided by the present invention, other comprises: form a protective seam in this patterned second transparency conducting layer.
Preferably, this method provided by the present invention wherein is to utilize little shadow and this protective seam of etching method patterning, and defines an opening with a mask that this opening makes those metal routings expose.
The 4th conception of the present invention is to provide a kind of touch-screen.This touch-screen comprises: an electrically conducting transparent district and a metal area.This electrically conducting transparent district presents one first pattern and one second pattern, and this second pattern is the outer rim that is connected in this first pattern.This metal area presents this second pattern.Wherein, this electrically conducting transparent district is a patterned transparency conducting layer, and this transparency conducting layer is to carry out patterning simultaneously and present this first pattern and this second pattern with a metal level that is positioned at one of this transparency conducting layer side; This metal area is to form by this first pattern of removing this patterned metal level.
Preferably, this touch-screen provided by the present invention, wherein the material of this transparency conducting layer mainly is made up of tin indium oxide.
Preferably, this touch-screen provided by the present invention, other comprises a substrate, is positioned at the opposite side of this transparency conducting layer.
Preferably, this touch screen provided by the present invention, wherein the material of this substrate is mainly by glass or quartzy the composition.
Preferably, this touch-screen provided by the present invention, this first pattern pattern that is a plurality of electrodes wherein, those electrodes are all arranged along a first direction, and the pattern that this second pattern is many cablings, the end system of those many cablings distinctly is connected in signal output place of those a plurality of electrodes.
The people who has common knowledge in the art,, can know that understanding this case applies for other purposes and the advantage of inventing through reading this case instructions and accompanying drawing thereof.
Description of drawings
Fig. 1 is the process flow diagram of known capacitance formula touch-screen processing procedure.
Fig. 2 (a) and (b) be mask synoptic diagram in the known capacitance formula touch-screen processing procedure.
Fig. 3 is a unit touch-screen configuration schematic diagram of finishing capacitive touch screen processing procedure of the present invention.
Fig. 4 (a) and (b) be preferable enforcement mask synoptic diagram in the capacitive touch screen processing procedure of the present invention.
Fig. 5 is the process flow diagram of the capacitive touch screen processing procedure of first embodiment of the invention.
Fig. 6 (a) to (d) is the part-structure vertical view of first embodiment of the invention processing procedure.
Fig. 7 (a) is the diagrammatic cross-section that forms Fig. 6 (d) in the first embodiment of the invention to (j).
Fig. 8 is the process flow diagram of the capacitive touch screen processing procedure of second embodiment of the invention.
Fig. 9 (a) to (c) is the part-structure vertical view of second embodiment of the invention processing procedure.
Figure 10 (a) to (l): the diagrammatic cross-section that forms Fig. 9 (c) in the second embodiment of the invention.
[main element symbol description]
Fig. 1
S101, s102, s103, s104, s105, s106, s107, s108, s109, s110, s111, s112 step
Fig. 2 (a) and (b)
M1, m2 mask
Many electrode patterns of p1
Many cabling patterns of p2
Fig. 3
1 substrate
The AM alignment mark
Cell unit touch-screen
Fig. 4 (a) and (b)
M1, M2 mask
The pattern of many electrodes of P1 and many cablings
The P2 reserved area
Fig. 5
S101, S102, S 103, S104, S 105, S106, S 107, S108, S109, S110, S111, S112 step
Fig. 6 (a) is to (d)
1 substrate
2 first transparency conducting layers
3 metal levels
8 metal routings
A-A ' section line segment
The AM alignment mark
Fig. 7 (a) is to (j)
A-A ' section line segment
1 substrate
2 first transparency conducting layers
2a second transparency conducting layer
3 metal levels
4 photosensitive material layers
The 4a photosensitive material layer
5 dielectric layers
6 photosensitive material layers
Fig. 8
S201, S202, S203, S204, S205, S206, S207, S208, S209, S210, S211 step
Fig. 9
1 substrate
2 first transparency conducting layers
3 metal levels
8 metal routings
A-A ' section line segment
Figure 10
1 substrate
2 first transparency conducting layers
2a second transparency conducting layer
3 metal levels
4 photosensitive material layers
5 dielectric layers
6 photosensitive material layers
7 photosensitive material layers
Embodiment
Because these reasons, the inventor is in view of in the above-mentioned known technology, for having relatively high expectations of contraposition degree of accuracy, need the mask and the higher equipment of service precision of pattern-making complexity, and expend problem such as higher cost, through concentrated test and research, and a spirit of working with perseverance, visualize the present invention's " touch-screen and manufacture method thereof " eventually, can not only overcome the problems referred to above, and still can reach good touch-control sensing performance, below be the brief description of this case.
This case can fully be understood by following embodiment explanation, make the personage who has the knack of this skill to finish according to this, but the enforcement of this case be not can be limited it by following case study on implementation to implement kenel.
In this article, term " patterning " means, and in making the touch-screen process, makes specified material layer form the program of specific pattern, and preferable being meant utilizes little shadow and etching method to make specified material layer form the program of pattern.
In this article, term " definition " means, and utilizes mask decision specific pattern in little shadow process.With gold-tinted processing procedure (ginseng down described) be example, as if mask with the light shielding part define pattern, then must be with positive photoresistance as photosensitive material; If mask then must be with negative photoresistance as photosensitive material with the transmittance section define pattern.
In this article, the process of carrying out little shadow (photolithography) and etching (etching) in gold-tinted chamber (yellow room) made a general reference in term " gold-tinted processing procedure ".When utilizing ultraviolet light to see through mask to expose, its light source is generally mercury lamp and adopts I-line (365nm), H-line (405nm), and the ultraviolet spectrum of G-line (436nm) through optical filtering.After overexposure, then show by the defined pattern of mask on transparency conducting layer or metal level.Then, can develop in this photosensitive material layer.
With positive photoresistance is example, and this photosensitive material layer through developing can present above-mentioned pattern, and then unlapped this transparency conducting layer of this photosensitive material layer or the metal level through developing can be removed by etching.Then, remove this photosensitive material layer through developing, then this transparency conducting layer or this metal level can present above-mentioned pattern.
In brief, for making touch-screen of the present invention, a main transparency conducting layer and the metal level of forming earlier, this transparency conducting layer of patterning and this metal level are simultaneously then removed the pattern part that is specific to this transparency conducting layer of this metal level.
At first, please refer to Fig. 3, it is a unit touch-screen configuration schematic diagram of finishing capacitive touch screen processing procedure of the present invention.Industrial, when finishing capacitive touch screen processing procedure of the present invention, the alignment mark AM on substrate 1, a plurality of unit touch-screen cell that finished can be configured on this substrate, then those unit touch-screen cell just can become independently touch-screen individually through cutting.
See also Fig. 4 (a) and reach (b), it is the preferable enforcement mask synoptic diagram in the capacitive touch screen processing procedure of the present invention, and main expression is at the mask design of cell capacitance formula touch-screen.Wherein, utilize the mask M1 shown in Fig. 4 (a), define the pattern P 1 of a plurality of electrodes and many cablings simultaneously, in order to above-mentioned transparency conducting layer of while patterning and metal level.Then, utilize another mask M2 shown in Fig. 4 (b),, then can simplify the design of mask M2 greatly in order to define the non-pattern part (reserved area P2) that is specific to this transparency conducting layer.
The detailed process of the preferable enforcement of the present invention is please further chatted embodiment after the reference.
First embodiment
Fig. 5 represents the process flow diagram of the capacitive touch screen processing procedure of first embodiment of the invention; The part-structure vertical view of Fig. 6 (a) to (d) expression first embodiment of the invention processing procedure.It is as follows that this processing procedure has step:
Step S101: at first can utilize lower but the plain glass pan feeding that penetrability is good of cost, as the substrate 1 (please refer to Fig. 6 (b)) that forms other conductive materials.
Step S102: utilize rubbing method (coating), sputtering method for example, and little shadow and etching method form alignment mark AM (please refer to Fig. 6 (a)) on the fringe region of this substrate 1.
Step S103: in order on substrate 1, to form a plurality of unit touch-screen, can utilize rubbing method, for example utilize sputtering method, form an ITO (indium tin oxide, tin indium oxide) layer (first transparency conducting layer 2) thereon.
Step S104: utilize this ITO layer of little shadow and etching decree (first transparency conducting layer 2) to form ITO longitudinal electrode (please refer to Fig. 6 (b)).
Step S105: utilize rubbing method to form a dielectric layer thereon as insulation course.
Step S106: utilize rubbing method to form another ITO layer (second transparency conducting layer) thereon.
Step S107: utilize rubbing method (for example sputtering method) to form a metal level 3 thereon.
Step S108: utilize little shadow and etching method simultaneously this ITO layer of patterning (second transparency conducting layer) and metal level 3 and form the pattern ((please refer to Fig. 6 (c))) of a plurality of transverse electrodes and many cablings.
Step S109: utilize little shadow and etching method, this transverse electrode pattern of selective removal metal level and stay metal routing 8 (please refer to Fig. 6 (d)).
Step S110: look the needs that processing procedure is implemented, recycling rubbing method forms a protective seam (its material can be silicon nitride, silicon oxynitride, monox or acryl resin etc.).
Step S111: utilize this protective seam of little shadow and etching decree to form opening, make output place of above-mentioned metal routing expose, then electric connection place that is provided signal to send outside.
Step S112: formed each cell capacitance formula touch-screen, can be through further processing (for example cutting apart each unit) and discharging.
The preferable processing procedure of relevant first embodiment of the invention, please further with reference to figure 7 (a) to (j), it is for forming the diagrammatic cross-section of Fig. 6 (d) unit touch screen structure in the first embodiment of the invention, is that to carry out exposure imaging with positive photoresistance be example, and its section line segment system represents with A-A '.
At first can on the fringe region of this substrate 1, form alignment mark AM (seeing also Fig. 6 (a)) earlier, in processing procedure, be used to carry out contraposition up and down earlier with glass or quartzy as a substrate 1.Can utilize sputtering method deposit transparent conductive material on substrate 1 plane, and form a transparency conducting layer, as one first transparency conducting layer 2 (shown in Fig. 7 (a)).(indium tin oxide is called for short ITO) has good, and the characteristic such as face resistance is low of transparency height, electric conductivity because tin indium oxide, usually as the material of this transparency conducting layer.
Can utilize the gold-tinted processing procedure to make this first transparency conducting layer 2 form a plurality of electrodes of arranging along a first direction.To form longitudinal electrode is example, can earlier a photosensitive material (for example positive photoresistance) layer be coated on this first transparency conducting layer 2, expose with the mask that defines those longitudinal electrode patterns, make this photosensitive material layer 4 develop (shown in Fig. 7 (b)), and carry out etching and remove (shown in Fig. 7 (c)) after this photosensitive material layer according to this development, and this first transparency conducting layer 2 of patterning is to form longitudinal electrode.
On this first transparency conducting layer 2, can utilize sputtering method to be coated with a dielectric layer 5 as insulation course (shown in Fig. 7 (d)).Then, on this dielectric layer 5, can utilize sputtering method to be coated with another transparency conducting layer, then deposit metallic material (for example all good aluminium of electric conductivity and ductility) and form this metal level 3 thereon as one second transparency conducting layer 2a.For this second transparency conducting layer 2a of while patterning and this metal level 3, can adopt little shadow and etching method, can in the gold-tinted processing procedure, form accurate conductive pattern.
Preferably, can desire to make the pattern of this second transparency conducting layer 2a formation earlier with mask definition, be divided into one first pattern (for example pattern of a plurality of transverse electrodes) and one second pattern (for example pattern of many strip metals cabling), and this second pattern is connected in the outer rim of this first pattern.Particularly, the pattern of a plurality of electrodes of mask definable and many cablings, wherein those a plurality of electrodes can be second direction arrangement, and the end system of those many cablings distinctly is connected in signal output place of those electrodes.
Metal routing with formation transverse electrode and connection thereof is an example, can be coated with a photosensitive material layer 4a earlier, utilize the mask M1 of those transverse electrodes of definition and metal routing pattern P 1 to expose (please refer to Fig. 4 (a)), and make this photosensitive material layer 4a develop (shown in Fig. 7 (e)).This photosensitive material layer 4a through developing can present above-mentioned pattern, and this photosensitive material layer 4a through developing covers this second transparency conducting layer 2a and this metal level 3 (shown in Fig. 7 (f)).Then, remove this photosensitive material layer 4a (shown in Fig. 7 (g)) through developing, then this second transparency conducting layer 2a and this metal level 3 the two all present above-mentioned transverse electrode and metal routing pattern P 1.
Because through after the said process, this metal level 3 has this first pattern and this second pattern simultaneously, be specific to this first pattern of this second transparency conducting layer 2a for removal, can utilize lithography process or wire mark method and selective etch method to remove this first pattern of this metal level 3, present the metal level 3 of this second pattern with generation.
Preferably, in little shadow process, can utilize a mask M2 to define a reserved area P2, with second pattern (with reference to figure 4 (b)) that keeps this metal level 3.This reserved area P2 does not comprise the distribution range of this first pattern part, but comprises the distribution range of this second pattern part at least.Particularly, can be coated with a photosensitive material layer 6 on this metal level 3, utilize this mask M2 to expose and develop (shown in Fig. 7 (h)), according to the part that do not show this reserved area P2 (as Fig. 7 (i) shown in) of this photosensitive material layer 6 through developing with this metal level 3 of selective etch in photosensitive material layer 6.Preferably, utilize above-mentioned selective etch, remove the pattern part that this metal level 3 presents a plurality of transverse electrodes.Then, removal this photosensitive material layer 6 (shown in Fig. 7 (j)) through developing.Therefore, through said process, do not have this first pattern through this metal level 3 of selective etch, but comprise this second pattern at least.Therefore, this metal level 3 can accurately present this accurate second pattern, but only need use than prior art and simplify many masks, the cost of manufacture that can save this mask, and the problem of solution contraposition precision.
Because above-mentioned reserved area P2 can be the figure of very simplifying, there is no the problem of high contraposition precision and high-res requirement, also can use wire mark method (figure does not show) to determine this reserved area P2.Particularly, can utilize the anti-etching material of wire mark coating (for example anti-etching printing ink) and become an anti-etching material layer on this metal level, and should prevent that the etching material layer only was covered in this reserved area of this metal level, then optionally etching without this metal level of this anti-etching layer of material covers, then remove and should prevent the etching material layer, then this metal level can stay this second pattern.Therefore, this process also can obviously be saved the cost of making mask, and still can produce accurate metal pattern.
Utilize the prepared capacitive touch screen of processing procedure of above-mentioned relevant first embodiment, a plurality of electrodes of can be respectively arranging along a first direction and a second direction, this first direction and this second direction can be orthogonal relation, can use the position of touch of induction X-axis and Y-axis.For example, a plurality of electrodes of ground floor can be longitudinal electrode, and the electrode of the second layer can be transverse electrode.In addition, those many cablings can accurately be connected in signal output place of those a plurality of transverse electrodes, to reduce the walk line impedence of transverse electrode to the face plate edge zone.
Second embodiment
Fig. 8 represents the process flow diagram of the capacitive touch screen processing procedure of second embodiment of the invention; The part-structure vertical view of Fig. 9 (a) to (c) expression second embodiment of the invention processing procedure.It is as follows that this processing procedure has step:
Step S201: at first can utilize a plain glass pan feeding, as the substrate 1 that forms other conductive materials.
Step S202: utilize rubbing method (coating), for example sputtering method forms an ITO layer (first transparency conducting layer 2) on this substrate.
Step S203: utilize rubbing method to form a metal level 3 thereon.
Step S204: utilize little shadow and etching method, while this ITO layer of patterning (first transparency conducting layer 2) and this metal level 3 are to produce patterns (please refer to Fig. 9 (a)) such as ITO transverse electrode, metal pattern and at least one alignment mark AM simultaneously.
Step S205: utilize little shadow and etching method, this transverse electrode pattern of this metal level 3 of selective removal and stay metal routing 8 (please refer to Fig. 9 (b)).
Step S206: utilize rubbing method to form a dielectric layer thereon as insulation course.
Step S207: utilize rubbing method to form another ITO layer (the second transparency conducting layer 2a) thereon.
Step S208: utilize this ITO layer of little shadow and etching method patterning (the second transparency conducting layer 2a) and form a plurality of longitudinal electrodes (please refer to Fig. 9 (c)).
Step S209: look the needs that processing procedure is implemented, recycling rubbing method forms a protective seam (its material is with above described).
Step S210: utilize this protective seam of little shadow and etching decree to form opening, make output place of above-mentioned metal routing expose, then electric connection place that is provided signal to send outside.
Step S211: formed each cell capacitance formula touch-screen can be through further processing and discharging.
The preferable processing procedure of relevant second embodiment of the invention, please further with reference to Figure 10 (a) to (l), it is for forming the diagrammatic cross-section of Fig. 9 (c) unit touch-screen in the second embodiment of the invention, is that to carry out exposure imaging with positive photoresistance be example, and its section line segment system represents with A-A '.
At first can utilize sputtering method deposit transparent conductive material (being preferably tin indium oxide) on base plan, and form a transparency conducting layer, as one first transparency conducting layer 2 earlier with glass or quartzy as a substrate 1.Then, deposit metallic material (for example aluminium) and form a metal level 3 (shown in Figure 10 (a)) thereon.
For formation is a plurality of electrodes of first direction arrangement, the metal routing and the alignment mark of its connection, can utilize gold-tinted processing procedure this first transparency conducting layer 2 of patterning and this metal level 3 simultaneously.For example, a plurality of electrodes that this first direction is arranged are transverse electrode, in the gold-tinted processing procedure, can define those transverse electrodes by same mask, the pattern of metal routing and at least one alignment mark and exposing, and can make a photosensitive material layer 4 on this first transparency conducting layer 2 and this metal level 3, develop (shown in Figure 10 (b)), then according to after the etching of developing pattern process (shown in Figure 10 (c)), remove this photosensitive material layer 4 (shown in Figure 10 (d)), then this first transparency conducting layer 2 and this metal level 3 all present those transverse electrodes, the pattern of metal routing and at least one alignment mark.In this process, need not use other masks of definition alignment mark in addition, can form alignment mark.
For removing the pattern that is specific to this first transparency conducting layer 2 in this metal level 3, can utilize lithography process or wire mark method and selective etch method, remove the pattern part that this metal level 3 presents those a plurality of electrodes at least, to stay the pattern of many strip metals cabling.
Preferably, the narration with first embodiment in little shadow process, can utilize a mask M2 to define a reserved area P2 (with reference to figure 4 (b)).This reserved area P2 does not comprise the distribution range of those a plurality of transverse electrode patterns, but comprises the distribution range of those metal routing patterns at least.Particularly, can be coated with a photosensitive material layer 6, utilize this mask M2 to expose and develop (shown in Figure 10 (e)), according to the part that do not show this reserved area P2 (as Figure 10 (f) shown in) of this photosensitive material layer 6 through developing with this metal level 3 of selective etch in photosensitive material layer 6.Preferably, utilize above-mentioned selective etch, remove the pattern part that this metal level 3 presents a plurality of transverse electrodes.Then, removal this photosensitive material layer 6 (shown in Figure 10 (g)) through developing.Therefore, through said process, do not have the pattern of those a plurality of transverse electrodes through this metal level 3 of selective etch, but comprise the pattern of those many cablings at least.Therefore, this metal level 3 can form accurate many strip metals cabling, but only need use than prior art and simplify many masks, can save the cost of manufacture of this mask, and solve the problem of high contraposition precision and high-res requirement.
With the narration of first embodiment, also can use the wire mark method to determine this reserved area P2, can obviously save the cost of making mask, and still can produce accurate metal routing pattern.
Then, can utilize sputtering method to be coated with a dielectric layer 5 as insulation course (shown in Figure 10 (h)).Then, on this dielectric layer 5, can utilize sputtering method to be coated with another transparency conducting layer, to form electrode along a second direction as one second transparency conducting layer 2a (shown in Figure 10 (i)).To form longitudinal electrode is example, can a photosensitive material layer 7 be coated on this second transparency conducting layer 2a earlier, expose with the mask that defines those longitudinal electrode patterns, make this photosensitive material layer 7 develop (shown in Figure 10 (j)), and carry out etching (shown in Figure 10 (k)) and remove (shown in Figure 10 (l)) after this photosensitive material layer according to this development, then this second transparency conducting layer of patterning 2a is to form longitudinal electrode.
In sum, utilize the prepared capacitive touch screen of processing procedure of second embodiment, because when forming the subsurface plate structure, can utilize common pattern transparency conducting layer 2 and metal level 3, and make those patterns along a plurality of electrodes, many strip metals cabling and the alignment mark AM of first direction arrangement, can save time and the cost of other making alignment mark AM greatly.In addition, described with first embodiment, utilize the mask of simplifying or change and adopt the wire mark method and selective etch metal level 2, to keep the process of metal routing, also can save the cost of making metal routing, and self-aligned effect is accurately arranged.
Therefore, utilize the prepared capacitive touch screen of manufacture method of the present invention, comprise at least: an electrically conducting transparent district (present one first pattern and one second pattern, this second pattern is the outer rim that is connected in this first pattern) and a metal area (presenting this second pattern).Wherein, this electrically conducting transparent district is a patterned transparency conducting layer, and this transparency conducting layer is to carry out patterning simultaneously and present this first pattern and this second pattern with a metal level that is positioned at one of this transparency conducting layer side; This metal area is to form by this first pattern of removing this patterned metal level.Preferably, this touch-screen comprises a substrate in addition, is positioned at the opposite side of this transparency conducting layer.
Present very universal on the market small-sized consumer electronic product (for example mobile phone), its capacitive touch screen is normal to adopt the two layers of ITO electrode capacitance touching control structure of transverse electrode and longitudinal electrode (respectively as) and many strip metals of one deck cabling (be connected in wherein one deck ITO electrode and as the signal conduction structure).Because small-sized electronic products such as action mobile phone are adopted the vertical type touch-screen more, so those metal routings are connected in transversal I TO electrode usually to reduce the impedance of fringe region.
The manufacture method of touch-screen of the present invention, also can be used for making touch-screen with double-deck transparency conducting layer and metal-layer structure, to be applied to dynamical especially capacitive touch screen, for example the projecting type capacitor formula touch-screen that adopted of Apple iPhone, large-scale capacitive touch screen or the capacitive touch screen of two-sided (DITO type).Particularly, be connected in the transverse electrode, can utilize process such as patterned transparent conductive layer and metal level simultaneously in addition, make the metal routing of another layer be connected in longitudinal electrode, also can be reduced in the impedance of longitudinal electrode fringe region except the layer of metal cabling is arranged.
In sum, touch-screen of the present invention and manufacture method thereof have following characteristic at least:
The manufacture method of touch-screen of the present invention can reach the effect of self-aligned in the patterning process, can make high transparent electrode pattern of resolution and metal routing, but need not the extra high board of service precision.
The manufacture method of touch-screen of the present invention, also can be before carrying out above-mentioned selective etch metal level, utilize the mask of simplifying to carry out lithography process or utilize the lower wire mark method of cost to determine the etched zone of non-genus, and need not in this part processing procedure, to make alignment mark, so can save cost spent in the known processing procedure greatly.
Though touch-screen cost of the present invention is lower, still have accurate transparency electrode and cabling and distribute, still possess quite good touch-control sensing performance, so can more be widely used in each electron-like or information product.
According to last opinion knot, the present invention is a tool industrial applicability, novelty and progressive invention in fact, dark tool dynamogenetic value.But above-described content only is a most preferred embodiment of the present invention, when can not with the scope implemented of qualification the present invention.I.e. equal variation and the modification of doing according to claims of the present invention generally all should still belong in the scope that patent of the present invention contains, sincerely please your juror's explicit example for reference, and pray Hui Zhun, be that institute is to praying.
Claims (12)
1. the manufacture method of a touch-screen, it comprises the following step:
Form a transparency conducting layer;
Form a metal level on this transparency conducting layer;
This transparency conducting layer of patterning and this metal level are to make indivedual one first pattern and one second pattern of producing of above-mentioned each layer simultaneously, and this second pattern system is connected in the outer rim of this first pattern; And
Remove this first pattern of this metal level.
2. the method for claim 1 is characterized in that:
This transparency conducting layer is to be formed on the substrate.
3. the method for claim 1 is characterized in that:
This first pattern is the pattern of a plurality of electrodes;
This second pattern is the pattern of many cablings; And
In those patterns, an end of those many cablings system distinctly is connected in signal output place of those a plurality of electrodes.
4. the method for claim 1 is characterized in that: be to utilize little shadow and etching method with this transparency conducting layer of while patterning and this metal level, wherein:
This lithography process shows those patterns on this transparency conducting layer and this metal level, and those patterns are to define via a mask; And
This etching method is removed the zone that does not show those patterns of this transparency conducting layer and this metal level, wherein:
Be to coat on this metal level as this photosensitive material layer, and this mask is to utilize a light shielding part to define those patterns with a positive photoresist layer; Or
Be to coat on this metal level as this photosensitive material layer, and this mask is to utilize a transmittance section to define those patterns with a negative photoresist layer.
5. method as claimed in claim 4 is characterized in that: be to utilize little shadow and wire mark method one of them and selective etch method to remove this first pattern of this metal level, wherein:
One of them shows a reserved area on this metal level this lithography process and this wire mark method, and this reserved area does not comprise the distribution range of this first pattern part but comprises the distribution range of this second pattern part at least;
This selective etch method is removed the part that does not show this reserved area of this metal level; And
This utilizes wire mark and selective etch to comprise with the process of this first pattern of removing this metal level:
Utilize wire mark coating one anti-etching material layer on this metal level, make this anti-etching layer of material covers in this reserved area of this metal level;
Selective etch is without this metal level that covers; And
Removing should anti-etching material layer.
6. the manufacture method of a touch-screen, it comprises the following step:
One substrate is provided;
Form at least one pair of fringe region that is marked on this substrate;
Form one first transparency conducting layer on this substrate;
This first transparency conducting layer of patterning is to produce a plurality of electrodes of arranging along a first direction;
Form a dielectric layer on those a plurality of electrodes;
Form one second transparency conducting layer on this dielectric layer;
Form a metal level on this second transparency conducting layer;
Simultaneously this second transparency conducting layer of patterning and this metal level are with a pattern that makes those layers all produce being a plurality of electrodes of arranging along a second direction and a pattern that is many cablings, and wherein an end of those cablings distinctly is connected in along signal output place of those a plurality of electrodes of this second direction arrangement; And
Remove this pattern that is those a plurality of electrodes of this metal level.
7. method as claimed in claim 6 is characterized in that:
Be to utilize little shadow and etching method to form this alignment mark, and define the pattern of this alignment mark with a mask;
Be those a plurality of electrodes that utilize little shadow and this first transparency conducting layer of etching method patterning to arrange along this first direction, and define the pattern of those a plurality of electrodes with a mask with generation; Or
Be to utilize little shadow and etching method this second transparency conducting layer of patterning and this metal level simultaneously, and be this pattern of a plurality of electrodes of arranging along this second direction and be this patterns of those many cablings with mask definition.
8. method as claimed in claim 6 is characterized in that:
Be to utilize little shadow and etching method to remove this pattern that is those a plurality of electrodes of this metal level, this lithography process shows that a reserved area is on this metal level, this reserved area does not comprise the distribution range of this pattern that is those a plurality of electrodes but comprises the distribution range of this pattern that is those many cablings at least that this etching method is removed the part that does not show this reserved area of this metal level;
Be to utilize wire mark and etching method to remove this pattern that is those a plurality of electrodes of this metal level, this wire mark method shows that a reserved area is on this metal level, this reserved area does not comprise the distribution range of this pattern that is a plurality of electrodes of arranging along this second direction but comprises the distribution range of this pattern that is those many cablings at least that this etching method is removed the part that does not show this reserved area of this metal level; Or
This method comprises formation one protective seam in addition on patterned this second transparency conducting layer and this metal level, wherein is to utilize little shadow and this protective seam of etching method patterning, and defines an opening with a mask that this opening makes those metal routings expose.
9. the manufacture method of a touch-screen, it comprises the following step:
One substrate is provided;
Form one first transparency conducting layer on this substrate;
Form a metal level on this first transparency conducting layer;
This first transparency conducting layer of patterning and this metal level are along a pattern, a pattern that is many cablings and at least one contraposition mark of a plurality of electrodes of first direction arrangement to make those layers all produce simultaneously;
Remove this pattern that is those a plurality of electrodes of this metal level;
Form a dielectric layer on patterned this first transparency conducting layer and this metal level;
Form one second transparency conducting layer on this dielectric layer; And
This second transparency conducting layer of patterning to be to produce a plurality of electrodes of arranging along a second direction, wherein those first or signal output place of a plurality of electrodes of arranging of second direction distinctly be connected in an end of those cablings.
10. method as claimed in claim 9 is characterized in that:
Be to utilize little shadow and etching method this first transparency conducting layer of patterning and this metal level simultaneously, and be along this pattern, this pattern that is those many cablings and this alignment mark of a plurality of electrodes of this first direction arrangement with mask definition;
Be to utilize little shadow and this second transparency conducting layer of etching method patterning, and be along this pattern of a plurality of electrodes of this second direction arrangement with mask definition; Or
This method comprises formation one protective seam in addition in this patterned second transparency conducting layer.
11. a touch-screen, it comprises:
One electrically conducting transparent district presents one first pattern and one second pattern, and this second pattern is the outer rim that is connected in this first pattern; And
One metal area presents this second pattern;
Wherein this electrically conducting transparent district is a patterned transparency conducting layer, and this transparency conducting layer is that the metal level with a side that is positioned at this transparency conducting layer carries out patterning simultaneously and presents this first pattern and this second pattern;
Wherein this metal area is to form by this first pattern of removing this patterned metal level.
12. touch-screen as claimed in claim 11 is characterized in that:
The material of this transparency conducting layer mainly is made up of tin indium oxide;
This touch-screen comprises a substrate in addition, is positioned at the opposite side of this transparency conducting layer, and wherein the material of this substrate is mainly by glass or quartzy the composition; Or
In this touch-screen:
This first pattern is the pattern of a plurality of electrodes; And
This second pattern is the pattern of many cablings, and an end of those many cablings is signal output place that distinctly is connected in those a plurality of electrodes.
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| CN2009102037828A CN101923412A (en) | 2009-06-16 | 2009-06-16 | Touch screen and manufacture method thereof |
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| CN2009102037828A CN101923412A (en) | 2009-06-16 | 2009-06-16 | Touch screen and manufacture method thereof |
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| CN2009102037828A Pending CN101923412A (en) | 2009-06-16 | 2009-06-16 | Touch screen and manufacture method thereof |
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