CN102654807A - Manufacturing method of touch panel - Google Patents
Manufacturing method of touch panel Download PDFInfo
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- CN102654807A CN102654807A CN201110305175XA CN201110305175A CN102654807A CN 102654807 A CN102654807 A CN 102654807A CN 201110305175X A CN201110305175X A CN 201110305175XA CN 201110305175 A CN201110305175 A CN 201110305175A CN 102654807 A CN102654807 A CN 102654807A
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- insulation course
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- electrically conducting
- insulating layer
- connecting line
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Abstract
The embodiment of the invention discloses a manufacturing method of a touch panel, relating to the technical field of touch panels. Through the invention, the using times of the photolithographic mask technology are reduced, the cost is lowered, and the output and yield of the touch panel are increased. The manufacturing method of a touch panel comprises the following steps of: forming a transparent conductive layer material on a substrate; forming an insulating layer material on the transparent conductive layer material; forming an insulating layer and a transparent conductive layer pattern below the insulating layer through a composition technology; and forming a connection line material on the insulating layer, and forming a connection line pattern through the composition technology.
Description
Technical field
The present invention relates to the contact panel technical field, relate in particular to the preparation method of contact panel.
Background technology
At present, the contact panel technology mainly contains following four types: electric resistance touch-control panel, capacitance type touch-control panel, infrared-type touch panel and surface acoustic wave type contact panel.Wherein capacitance type touch-control panel is because the advantage of each side such as its accuracy height, long service life, antijamming capability be strong and by application widely.
Photo etched mask technology is the necessary technology of preparation contact panel; The cost of photo etched mask accounts for very big ratio in the total cost of preparation contact panel; And photo etched mask technology cost is chronic, and the yield of the article confrontation product of photo etched mask also plays very big effect.At present, the preparation technology that single side face is coated with the contact panel of single-layer and transparent conductive layer on substrate need carry out the third photo etching mask.As shown in Figure 1; At first on substrate, using for the first time, the photo etched mask prepared goes out electrically conducting transparent layer pattern 5; The use photo etched mask prepared second time goes out insulation course 4 on electrically conducting transparent layer pattern 5 then, and on insulation course 4, using for the third time, the photo etched mask prepared goes out connecting line 7.
The inventor finds that the existing third photo etching masking process production cycle is long, influences output, and photo etched mask process repeatedly, can increase the probability that product is contaminated and damage, and influences the yield of contact panel.
Summary of the invention
Embodiments of the invention provide a kind of preparation method of contact panel, have reduced the access times of photo etched mask technology, have reduced cost, have improved the output and the yield of contact panel.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A kind of preparation method of contact panel comprises:
On substrate, form the electrically conducting transparent layer material, on said electrically conducting transparent layer material, form insulating layer material, form the electrically conducting transparent layer pattern under insulation course and the insulation course through composition technology;
On said insulation course, form the connecting line material, form the connecting line pattern through composition technology.
Said step through the electrically conducting transparent layer pattern under composition technology formation insulation course and the insulation course comprises:
Coating one deck photoresist on said insulating layer material;
The employing half-tone mask plate makes public to said photoresist and develops, and photoresist forms complete reserve area, part reserve area and removes the zone fully;
Remove the said insulating layer material of removing the zone fully through etching technics, form the first insulation course figure, the said first insulation course figure is made up of several first insulating layer patterns;
Remove the said electrically conducting transparent layer material of exposure through over etching technology, form the electrically conducting transparent layer pattern, said electrically conducting transparent layer pattern is made up of several transparency conducting layer patterns, and the pattern of said transparency conducting layer is less than position first insulating layer pattern on it;
Remove the photoresist except that said complete reserve area through cineration technics;
Remove the first insulation course figure of exposure through etching technics, form the second insulation course figure, the said second insulation course figure is made up of several second insulating layer patterns;
Remove remaining photoresist.
Also comprise: on said connecting line, protective seam is set, said substrate and protective seam material are glass, quartz, fexible film or plastics.
The preparation method of the embodiment of the invention; Use the Twi-lithography masking process to prepare contact panel, with respect to preparing contact panel through the third photo etching masking process in the prior art, promptly through behind the photo etched mask technology formation transparency conducting layer; Utilize photo etched mask technology to form and be positioned at the insulation course on the transparency conducting layer; Utilize photo etched mask technology to form connecting line at last once more, the preparation method of the embodiment of the invention adopts half-tone mask plate that said photoresist is made public and develops, and forms transparency conducting layer and insulation course respectively through twice etching technology then; Form connecting line through photo etched mask technology again; Reduce the use of a photo etched mask technology, reduced cost, improved the output and the yield of contact panel.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below.Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work property, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the cross-sectional view of contact panel in the prior art;
Fig. 2 is the preparation method's of embodiment of the invention contact panel a process flow diagram;
Fig. 3 is the structural representation of contact panel in the embodiment of the invention;
Fig. 4 is the process flow diagram of step 101 in the embodiment of the invention;
Fig. 5 is the structural representation behind the formation electrically conducting transparent layer material in the embodiment of the invention;
Fig. 6 is the structural representation behind the formation insulating layer material in the embodiment of the invention;
Fig. 7 is for utilizing the photoresist structure synoptic diagram after half-tone mask plate makes public, develops in the embodiment of the invention;
Fig. 8 is the structural representation behind the etching insulation course in the embodiment of the invention;
Fig. 9 is the structural representation of insulation course figure in the embodiment of the invention;
Figure 10 is the structural representation behind the etching transparency conducting layer in the embodiment of the invention;
Figure 11 is the structural representation of electrically conducting transparent layer pattern in the embodiment of the invention;
Figure 12 is the structural representation behind the ashing photoresist in the embodiment of the invention;
Figure 13 is the structural representation behind the etching insulation course for the second time in the embodiment of the invention;
Figure 14 is the structural representation of the second insulation course figure in the embodiment of the invention;
Figure 15 is for removing the structural representation behind the photoresist in the embodiment of the invention;
Figure 16 is the process flow diagram of step 102 in the embodiment of the invention;
Figure 17 is the structural representation behind the formation connecting line material in the embodiment of the invention;
Figure 18 is the structural representation behind the etching connecting line material in the embodiment of the invention;
Figure 19 is the structural representation of connecting line figure in the embodiment of the invention.
Description of reference numerals:
1; Contact panel 2; Substrate 3; Bridging line 4; Insulation course 41; Insulating regions 5; Electrically conducting transparent layer pattern 51; First module 52; Second unit 53; Connecting line 6; Plain conductor 7; Connecting line 8; Electrically conducting transparent layer material 9; Insulating layer material 10; Complete reserve area 11; Part reserve area 12; The first insulation course figure 121; Insulation course first module pattern 122; Insulation course second unit pattern 123; Insulation course connecting line pattern 13; Electrically conducting transparent layer pattern 131; First module pattern 132; Second unit pattern 133; Connecting line pattern 14; The second insulation course figure 15; Connecting line material 16; Connecting line pattern 17; Insulating space
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention will be carried out clear, intactly description.Obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
The embodiment of the invention provides a kind of preparation method of contact panel, has reduced the access times of photo etched mask technology, has reduced cost, has improved the output and the yield of contact panel.
The embodiment of the invention provides a kind of preparation method of contact panel.As shown in Figure 2, this method comprises:
101, on substrate, form the electrically conducting transparent layer material, on said electrically conducting transparent layer material, form insulating layer material, form the electrically conducting transparent layer pattern under insulation course and the insulation course through composition technology;
102, on said insulation course, form the connecting line material, form the connecting line pattern through composition technology;
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention will be described in detail.
The structure of the contact panel of embodiment of the invention preparation is as shown in Figure 3; This contact panel 1 comprises substrate 2, bridging line 3, insulation course 4, electrically conducting transparent layer pattern 5 and plain conductor 6; Electrically conducting transparent layer pattern 5 covers on the transparency carrier 2; Electrically conducting transparent layer pattern 5 comprises a plurality of first modules 51 and a plurality of second unit 52 and a plurality of connecting line 53, and the first module 51 and second unit 52 are the induction region of capacitance type touch-control panel.First module 51 and Unit second 52 alternative arrangement, each first module 51 is centered on by four second unit 52, and a plurality of connecting lines 53 connect two second adjacent unit 52 respectively.Insulation course 4 comprises a plurality of insulating regions 41, and a plurality of insulating regions 41 cover respectively on a plurality of connecting lines 53.A plurality of bridging lines 3 are separately positioned on a plurality of insulating regions 41, and connect two adjacent first modules 51 respectively.Plain conductor 6 be arranged on electrically conducting transparent layer pattern 5 around, make the first module 51 and second unit 52 be connected to external sensor and process chip through these a plurality of plain conductors 6.
Wherein, step 101, on substrate, form the electrically conducting transparent layer material, on said electrically conducting transparent layer material, form insulating layer material, form the electrically conducting transparent layer pattern under insulation course and the insulation course through composition technology, as shown in Figure 4, this step specifically comprises:
1011, on substrate, form the electrically conducting transparent layer material;
As shown in Figure 5, on substrate 2, utilize sputtering method to form transparency conducting layer material oxidation indium zinc IZO 8, the material of substrate 2 is transparent glass substrate or transparent quartz substrate or transparent flexible film substrate or transparent flexible plastic base.
1012, on the electrically conducting transparent layer material, form insulating layer material;
As shown in Figure 6, on transparency conducting layer material oxidation indium zinc IZO 8, utilize CVD method to form insulating layer material 9.
1013, coating one deck photoresist on said insulating layer material;
1014, the employing half-tone mask plate makes public to said photoresist and develops, and photoresist forms complete reserve area, part reserve area and removes the zone fully;
As shown in Figure 7, adopt half-tone mask plate that said photoresist is made public and develops, form complete reserve area 10, part reserve area 11 and remove regional fully.
1015, remove the said insulating layer material of removing the zone fully through etching technics, form the first insulation course figure, the said first insulation course figure is made up of several first insulating layer patterns;
As shown in Figure 8, remove the said insulating layer material of removing the zone fully through etching technics, form the first insulation course figure 12, as shown in Figure 9, the said first insulation course figure 12 is made up of several first insulating layer patterns; First insulating layer pattern comprises: with the corresponding insulation course first module of first module pattern pattern 121 in the transparency conducting layer, with transparency conducting layer in corresponding insulation course second unit pattern 122 of second unit pattern and with transparency conducting layer in the corresponding insulation course connecting line of connecting line pattern pattern 123.
1016, remove the said electrically conducting transparent layer material of exposure through over etching technology; Form the electrically conducting transparent layer pattern; Said electrically conducting transparent layer pattern is made up of several transparency conducting layer patterns, and the pattern of said transparency conducting layer is less than position first insulating layer pattern on it;
Shown in figure 10; Remove the said electrically conducting transparent layer material of exposure through over etching technology; Form electrically conducting transparent layer pattern 13; Shown in figure 11; Said electrically conducting transparent layer pattern 13 is made up of several transparency conducting layer patterns, and electrically conducting transparent layer pattern 13 comprises: first module pattern 131, second unit pattern 132 and connecting line pattern 133, and the pattern of said transparency conducting layer is less than position first insulating layer pattern on it; Be first module pattern 131 less than covering on it insulation course first module pattern 121, second unit pattern 132 less than insulation course second unit pattern 122 that covers on it, connecting line pattern 133 is less than the insulation course connecting line pattern 123 that covers on it.
The preparation method that the embodiment of the invention provides is through over etching technology, when removing the material that is exposed to outside the photoresist overlay area; Material is carried out lateral etching, make the edge of the first insulation course figure grow formation the edge of figure, in embodiments of the present invention; 3 microns at the edge of the Edge Distance first insulation course figure of figure, shown in figure 10, through over etching technology; Make the first module pattern 131 of formation and the right and left of connecting line pattern 133 all and between the edge of position insulating layer pattern on it leave insulating space 17, the width of this insulating space 17 is 3 microns, meanwhile; The thickness of figure 13 is merely the 400-1200 Ethylmercurichlorendimide; Promptly the height of this insulating space is merely the 400-1200 Ethylmercurichlorendimide, and the width of this insulating space 17 makes when on insulation course, utilizing sputtering method to form the connecting line material much larger than its height; The connecting line material can't get into this insulating space 17 and contact with figure 13, thus the connecting line that prevents to form be short-circuited.
1017, remove the photoresist of except that said complete reserve area (part reserve area) through cineration technics;
Shown in figure 12, remove the photoresist except that said complete reserve area 10 through cineration technics.
1018, remove the first insulation course figure of exposure through etching technics; Form the second insulation course figure; The said second insulation course figure is made up of several second insulating layer patterns, in the said electrically conducting transparent layer pattern with said connecting line junction on no said second insulating layer pattern cover;
Shown in figure 13; Remove the first insulation course figure that is exposed to outside the photoresist overlay area through etching technics, form the second insulation course figure 14, shown in figure 14; The said second insulation course figure 14 is made up of several second insulating layer patterns; In the said electrically conducting transparent layer pattern with said connecting line junction on the no said second insulation course figure 14 cover, make that connecting line can be connected with transparency conducting layer first module pattern 131 after forming the connecting line material.
1019, remove remaining photoresist.
Shown in figure 15, remove remaining photoresist.
With respect to generating transparency conducting layer and insulation course through the Twi-lithography masking process in the prior art; After promptly forming transparency conducting layer through photo etched mask technology; Utilize photo etched mask technology to form once more and be positioned at the insulation course on the transparency conducting layer; The method of the embodiment of the invention is made public to said photoresist through the employing half-tone mask plate and is developed, and forms transparency conducting layer and insulation course respectively through twice etching technology then, has reduced the use of a photo etched mask technology.
Step 102, on said insulation course, form the connecting line material, form the connecting line pattern through composition technology, shown in figure 16, this step specifically comprises:
1021, on insulation course, form the connecting line material;
Shown in figure 17, on insulation course, utilize sputtering method to form connecting line material 15.
1022, form the connecting line pattern through composition technology.
Shown in figure 18, through mask board to explosure, development, form connecting line through etching technics then, connecting line comprises connecting line pattern 16.Shown in figure 19 because insulation course connecting line pattern 123 is greater than connecting line pattern 133, so that produce the gap between the cross section of connecting line pattern 16 and connecting line pattern 133, prevented to produce short circuit between connecting line pattern 16 and the connecting line pattern 133.
After forming connecting line, protective seam is set on connecting line, wherein the material of protective seam is preferably glass, quartz, fexible film or plastics.
The preparation method of the embodiment of the invention; Use the Twi-lithography masking process to prepare contact panel, with respect to preparing contact panel through the third photo etching masking process in the prior art, promptly through behind the photo etched mask technology formation transparency conducting layer; Utilize photo etched mask technology to form and be positioned at the insulation course on the transparency conducting layer; Utilize photo etched mask technology to form connecting line at last once more, the preparation method of the embodiment of the invention adopts half-tone mask plate that said photoresist is made public and develops, and forms transparency conducting layer and insulation course respectively through twice etching technology then; Form connecting line through photo etched mask technology again; Reduce the use of a photo etched mask technology, reduced cost, improved the output and the yield of contact panel.
The above; Be merely embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technician who is familiar with the present technique field is in the technical scope that the present invention discloses; Can expect easily changing or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by said protection domain with claim.
Claims (3)
1. the preparation method of a contact panel is characterized in that, comprising:
On substrate, form the electrically conducting transparent layer material, on said electrically conducting transparent layer material, form insulating layer material, form the electrically conducting transparent layer pattern under insulation course and the insulation course through composition technology;
On said insulation course, form the connecting line material, form the connecting line pattern through composition technology.
2. preparation method according to claim 1 is characterized in that, said step through the electrically conducting transparent layer pattern under composition technology formation insulation course and the insulation course comprises:
Coating one deck photoresist on said insulating layer material;
The employing half-tone mask plate makes public to said photoresist and develops, and photoresist forms complete reserve area, part reserve area and removes the zone fully;
Remove the said insulating layer material of removing the zone fully through etching technics, form the first insulation course figure, the said first insulation course figure is made up of several first insulating layer patterns;
Remove the said electrically conducting transparent layer material of exposure through over etching technology, form the electrically conducting transparent layer pattern, said electrically conducting transparent layer pattern is made up of several transparency conducting layer patterns, and the pattern of said transparency conducting layer is less than position first insulating layer pattern on it;
Remove the photoresist except that said complete reserve area through cineration technics;
Remove the first insulation course figure of exposure through etching technics, form the second insulation course figure, the said second insulation course figure is made up of several second insulating layer patterns;
Remove remaining photoresist.
3. preparation method according to claim 1 is characterized in that, also comprises: on said connecting line, protective seam is set, said substrate and protective seam material are glass, quartz, fexible film or plastics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110305175XA CN102654807A (en) | 2011-10-10 | 2011-10-10 | Manufacturing method of touch panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110305175XA CN102654807A (en) | 2011-10-10 | 2011-10-10 | Manufacturing method of touch panel |
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| CN102654807A true CN102654807A (en) | 2012-09-05 |
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| CN201110305175XA Pending CN102654807A (en) | 2011-10-10 | 2011-10-10 | Manufacturing method of touch panel |
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Cited By (6)
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| CN103838449A (en) * | 2014-03-03 | 2014-06-04 | 山东华芯富创电子科技有限公司 | Single-face structure of touch panel and manufacturing method of single-face structure |
| CN104216562A (en) * | 2014-08-22 | 2014-12-17 | 京东方科技集团股份有限公司 | Touch control panel as well as manufacturing method and display device of touch control panel |
| CN104576527A (en) * | 2014-12-31 | 2015-04-29 | 深圳市华星光电技术有限公司 | Method for preparing array substrate |
| CN105159514A (en) * | 2015-09-15 | 2015-12-16 | 深圳市华星光电技术有限公司 | Touch control panel and fabrication method thereof |
| CN108807470A (en) * | 2018-05-28 | 2018-11-13 | 武汉华星光电半导体显示技术有限公司 | The production method of touching display screen |
| CN109791319A (en) * | 2017-07-10 | 2019-05-21 | 深圳市柔宇科技有限公司 | The stripping means and peel-off device of flexible base board |
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| CN103838449A (en) * | 2014-03-03 | 2014-06-04 | 山东华芯富创电子科技有限公司 | Single-face structure of touch panel and manufacturing method of single-face structure |
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| CN104576527A (en) * | 2014-12-31 | 2015-04-29 | 深圳市华星光电技术有限公司 | Method for preparing array substrate |
| CN104576527B (en) * | 2014-12-31 | 2017-08-29 | 深圳市华星光电技术有限公司 | A kind of preparation method of array base palte |
| CN105159514A (en) * | 2015-09-15 | 2015-12-16 | 深圳市华星光电技术有限公司 | Touch control panel and fabrication method thereof |
| CN109791319A (en) * | 2017-07-10 | 2019-05-21 | 深圳市柔宇科技有限公司 | The stripping means and peel-off device of flexible base board |
| CN109791319B (en) * | 2017-07-10 | 2022-05-17 | 深圳市柔宇科技股份有限公司 | Method and apparatus for peeling flexible substrate |
| CN108807470A (en) * | 2018-05-28 | 2018-11-13 | 武汉华星光电半导体显示技术有限公司 | The production method of touching display screen |
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| CN108807470B (en) * | 2018-05-28 | 2021-05-07 | 武汉华星光电半导体显示技术有限公司 | Manufacturing method of touch display screen |
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Application publication date: 20120905 |