CN101923292A - Removal method of chromium residues on border of mask - Google Patents
Removal method of chromium residues on border of mask Download PDFInfo
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- CN101923292A CN101923292A CN2010102436924A CN201010243692A CN101923292A CN 101923292 A CN101923292 A CN 101923292A CN 2010102436924 A CN2010102436924 A CN 2010102436924A CN 201010243692 A CN201010243692 A CN 201010243692A CN 101923292 A CN101923292 A CN 101923292A
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- Prior art keywords
- exposure file
- rectangle
- file
- rectangle exposure
- exposure
- Prior art date
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 84
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 238000005530 etching Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 239000002699 waste material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000011651 chromium Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000008034 disappearance Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- -1 indium tin metal oxide Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Abstract
The embodiment of the invention relates to a removal method of chromium residues on the border of a mask. The method comprises the following steps of: firstly, arranging an exposure file on the border of a mask material with a graphic area, wherein the area of the exposure file is not stacked with the graphic area; then, exposing the exposure file in the exposure file area and a sensitive adhesive coated on the mask material; and finally, removing the sensitive adhesive on the border of the mask material according to an exposure track remained on the mask material when the chromium residues exist on the border of the mask material and also removing the chromium residues on the border of the mask material. By adopting method of the embodiment, the chromium residues on the border of the mask material can be removed, the problem of graphic miss brought by adopting an etching removal method through a chemical reaction is avoided, the mask quality is ensured against waste and the material and operation costs are saved.
Description
Technical field
The present invention relates to electronic manufacturing field, relate in particular to a kind of chromium residues on border of mask removal method.
Background technology
High speed development along with electronic industry, liquid crystal display (Liquid Crystal Display, LCD), (Integrated Circuit IC) waits in the electronic manufacturing industry integrated circuit, light shield becomes one of requisite important mould, and it is used more and more widely.It is as follows that general light shield manufacture is crossed title: with soda glass or quartz glass is base material, form light shield layer at its surface-coated one deck chromium (Cr) layer, on the chromium layer, apply one deck chromium oxide layer again, at last at chromium oxide layer surface-coated one deck photoresists, after using the software control exposure device that it is carried out electron beam exposure or radium-shine exposure, pass through chemical reaction again, promptly photoresists and part chromium layer are removed by chemical liquid, thereby form designed figure, above-mentioned figure chromium is imprinted on the manufacturing process of the process light shield of base material.During the making of light shield, it is that the center is rotated the formula coating that the photoresists of the surface the superiors mainly adopt with the base material when applying, so, when rotation applies photoresists, the thickness of the photoresists of each position is variant on the whole surface, particularly the regional photoresists of the about 10-20mm width in light shield edge are thicker relatively, like this, after above-mentioned light shield manufacture process, be prone to a large amount of chromium residues in the zone of the about 10-20mm width in light shield edge, residual chromium can be produced the very big quality influence of generation to using light shield, particularly, when using light shield to produce, when the anchor clamps of light shield edge and folder light shield when contacting, the chromium powder that the chromium residues at light shield edge forms after by clamp wear easily drops at operation field, causes product polluted by chromium powder, quality does not reach the electronic manufacturing industry requirement, and is particularly all the more so in the IC semicon industry; In addition, chromium powder also easily pollutes the nano indium tin metal oxide (when ito glass was carried out cutting operation, chromium powder can hinder cutting like this, caused cutting accuracy not reach production requirement for Indium Tin Oxides, ITO) glass, caused ITO cutting quality to descend.
In order to remove chromium residues, generally adopt etching to remove method by chemical reaction, this method is carried out wiping toward the chromium residues zone at light shield edge after mainly adopting cotton rod to be stained with etching solution, so that etching solution and chromium generation chemical reaction are removed chromium residues.But because etching solution is a liquid, it can spread in wiping process unavoidably, and when near the chromium residues this method removal figure of employing, etching solution can infiltrate graph area, causes the disappearance of figure, causes light shield to be scrapped.
Summary of the invention
Embodiment of the invention technical matters to be solved is, a kind of chromium residues on border of mask removal method is provided, and can ensure the integrality of figure in the light shield when removing chromium residues on border of mask.
For solving the problems of the technologies described above, the embodiment of the invention adopts following technical scheme: a kind of chromium residues on border of mask removal method, comprise: the file that will expose places the photomask materials edge that is provided with the graphics field, described photomask materials is coated with photoresists, and described exposure file region is not overlapping with described graphics field; Exposure file and photoresists to described exposure file region expose; According to the exposure vestige that leaves on the described photomask materials photoresists at described photomask materials edge are removed, to remove the chromium residues at described photomask materials edge.
A kind of chromium residues on border of mask removal method, comprise: with first rectangle exposure file, second rectangle exposure file vertically places the edge of the photomask materials directions X that is provided with the graphics field respectively, with the 3rd rectangle exposure file, the 4th rectangle exposure file laterally places the edge of described photomask materials Y direction respectively, described directions X and described Y direction quadrature, described photomask materials is coated with photoresists, described first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region and the 4th rectangle exposure file region are all not overlapping with described graphics field; First rectangle exposure file, second rectangle exposure file, the 3rd rectangle exposure file, the 4th rectangle exposure file and photoresists to described first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region, the 4th rectangle exposure file region expose; According to the exposure vestige that leaves on the described photomask materials photoresists at described photomask materials edge are removed, to remove the chromium residues at described photomask materials edge.
The beneficial effect of the embodiment of the invention is: by a kind of chromium residues on border of mask removal method is provided, the file that at first will expose places the edge of the photomask materials that is provided with the graphics field, certainly, exposure file region is not overlapping with the graphics field, exposure file and the coated photoresists of photomask materials to exposure file region expose then, at last when there is chromium residues at the photomask materials edge, according to the exposure vestige that leaves on the photomask materials photoresists at photomask materials edge are removed, just the chromium residues at photomask materials edge has been removed simultaneously.Like this, in the chromium residues of removing the photomask materials edge, avoid adopting etching to remove the problem of the figure disappearance that method brings, guaranteed the light shield quality and discarded, saved material, operating cost by chemical reaction.
Below in conjunction with accompanying drawing the embodiment of the invention is described in further detail.
Description of drawings
Fig. 1 is the main process flow diagram of the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 2 is a photomask materials size synoptic diagram in the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 3 is first rectangle exposure file and second rectangle exposure document size synoptic diagram in the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 4 is the 3rd rectangle exposure file and the 4th a rectangle exposure document size synoptic diagram in the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 5 is the schematic layout pattern when placing each rectangle exposure file on the photomask materials in the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 6 is that photomask materials carries out formal exposed areas size synoptic diagram in the chromium residues on border of mask removal method of the embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of chromium residues on border of mask removal method, it mainly comprises: the file that at first will expose places the edge of the photomask materials that is provided with the graphics field, certainly, the shape of exposure file, quantity all can in the light of actual conditions be selected for use, for example, when light shield is square or rectangle, corresponding exposure file can correspondingly adopt rectangle or crescent etc., and the chromium residues situation at each edge, limit of photomask materials might be identical or different, at this moment, can the exposure file be set in the edge correspondence that photomask materials has serious one or more limits of chromium residues or chromium residues, and in order to stay the exposure vestige in the illumination edge of materials, the shape of exposure file, big I adopts according to actual conditions, but needs to guarantee that the exposure file is not overlapping with the graphics field in the region at photomask materials edge; Then exposure file and photoresists on the exposure file region are exposed, when exposure file when being a plurality of, can expose to each edge exposure file region of photomask materials successively according to the order of the program of saving, the energy setting of exposure also can be selected to adopt according to actual conditions, for example adopt photomask materials expose 1.5 times, 2 times of used energy or 3 times etc., at this moment, according to the reaction of exposure area high-energy, the photoresists on the photomask materials also can be exposed to the sun; At last when there is chromium residues at the photomask materials edge, according to the exposure vestige that leaves on the photomask materials photoresists at photomask materials edge are removed, just the chromium residues at photomask materials edge has been removed simultaneously, wherein, can require to choose the opportunity of removing the edge photoresists according to reality.
Like this, in the chromium residues of removing the photomask materials edge, avoid adopting etching to remove the problem of the figure disappearance that method brings, guaranteed the light shield quality and discarded, saved material, operating cost by chemical reaction.
Below by a specific embodiment chromium residues on border of mask removal method of the present invention is described.
With reference to Fig. 1, the chromium residues on border of mask removal method of the embodiment of the invention mainly comprises the steps: 101, selects a photomask materials that has applied photoresists; 102, according to two groups of rectangle exposures of photomask materials size design file, first group of rectangle exposure file comprises first rectangle exposure file and second rectangle exposure file, second group of rectangle exposure file comprises the 3rd rectangle exposure file and the 4th rectangle exposure file, setting exposure directions is the Y direction, with Y direction quadrature be directions X, the length direction of first group of rectangle exposure file is parallel to the Y direction, and the length direction of second group of rectangle exposure file is parallel to directions X, and each first rectangle exposure file, second rectangle exposure file, the length value of the 3rd rectangle exposure file and the 4th rectangle exposure file respectively with described photomask materials that it is placed on the corresponding edge on one side the length of side equate, width value respectively with described photomask materials that it is placed on the corresponding edge equate to described graphics field distance on one side, for example shown in Figure 2, the length of side of photomask materials on directions X is 609.6mm (length), the length of side on the Y direction is 508mm (wide), graphics field in the photomask materials is 20mm to each back gauge of photomask materials, then first rectangle exposure file and second rectangle exposure document size are all as shown in Figure 3, its length value is 508mm, width value is 20mm, and the 3rd rectangle exposure file and the 4th rectangle exposure document size are all as shown in Figure 4, and its length value is 609.6mm, width value also is 20mm; 103, as shown in Figure 5, first rectangle exposure file and second rectangle exposure file are vertically placed the edge of photomask materials directions X respectively, the 3rd rectangle exposure file, the 4th rectangle exposure file are laterally placed the edge of described photomask materials Y direction respectively, adopted above-mentioned photomask materials size and each rectangle exposure document size just to guarantee that first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region and the 4th rectangle exposure file region are all not overlapping with described graphics field; 104, first rectangle exposure file, second rectangle exposure file and photoresists to first rectangle exposure file region and second rectangle exposure file region expose, the energy of this exposure makes 2 times of used energy (standard exposure energy when promptly making light shield) for photomask materials is exposed, this moment, not only first rectangle exposure file, second rectangle exposure file were exposed, and also can be exposed to the sun and softened together with the photoresists of first rectangle exposure file region and second rectangle exposure file region; 105, again with photomask materials, after the 3rd rectangle exposure file and the 4th rectangle exposure file revolve and turn 90 degrees, the 3rd rectangle exposure file to the 3rd rectangle exposure file region and the 4th rectangle exposure file region, the 4th rectangle exposure file and photoresists expose, the energy of this exposure makes 2 times of used energy (standard exposure energy when promptly making light shield) for photomask materials is exposed, this moment is the 3rd rectangle exposure file not only, the 4th rectangle exposure file is exposed, and also can be exposed to the sun and softens together with the photoresists of the 3rd rectangle exposure file region and the 4th rectangle exposure file region; Open double exposure by 104,105 minutes, but exposed areas not in the middle of the rapid Optimum photomask materials reaches the effect of finishing fast; 106, according to 104, the vestige of 105 exposures is removed the softening photoresists at photomask materials edge, particularly, to 104,105 step gained photomask materials edges are exposed areas, promptly does not remove earlier in Ruan Hua photoresists zone, but after treating the follow-up light that formally exposed to the sun, production procedure according to light shield, developing, in the etching process, because the photoresists zone at edge all is softened, and when formally exposing, softening degree ratio is eager to excel, so the photoresists on the limit can be removed very clean when developing, when etching, just the chromium metal level at edge can be removed totally, so just can not produced the chromium residues phenomenon, also the chromium residues phenomenon can not occur even the photoresists at edge are inhomogeneous.
When removing, just the chromium residues at photomask materials edge has been removed the photoresists that the photomask materials edge is softening, as shown in Figure 6, left in the photomask materials after photoresists are removed, carrying out follow-up formal exposed areas size is 569.6mm * 468mm, (this formal exposure area size is 569.6mm * 468mm) can to proceed formal exposure process in the light shield production run afterwards, after having removed softening photoresists, because formal exposure area narrows down to 569.6 present * 468mm from original 609.6mm * 508mm, reached the effect that reduces the time shutter.
The following points that need explanation: 1, when exposure directions is directions X, can be earlier the 3rd rectangle exposure file, the 4th rectangle exposure file and the photoresists of above-mentioned the 3rd rectangle exposure file region and the 4th rectangle exposure file region be exposed, again above-mentioned photomask materials, first rectangle exposure file and second rectangle exposure file are revolved turn 90 degrees after, first rectangle exposure file, second rectangle exposure file and the photoresists of above-mentioned first rectangle exposure file region and second rectangle exposure file region are exposed; 2, chromium residues on border of mask removal method shown in Figure 1 loads in the light shield production procedure and carries out, and before the light shield production procedure is carried out, can adopt the exposure file that designs that photomask materials is exposed in advance, after finishing, exposure this edition preservation can be used when light shield is produced so that formally carry out.
The above is the specific embodiment of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also are considered as protection scope of the present invention.
Claims (6)
1. a chromium residues on border of mask removal method is characterized in that, comprising:
The exposure file is placed the photomask materials edge that is provided with the graphics field, and described photomask materials is coated with photoresists, and described exposure file region is not overlapping with described graphics field;
Exposure file and photoresists to described exposure file region expose;
According to the exposure vestige that leaves on the described photomask materials photoresists at described photomask materials edge are removed, to remove the chromium residues at described photomask materials edge.
2. a chromium residues on border of mask removal method is characterized in that, comprising:
First rectangle exposure file, second rectangle exposure file are vertically placed the edge of the photomask materials directions X that is provided with the graphics field respectively, the 3rd rectangle exposure file, the 4th rectangle exposure file are laterally placed the edge of described photomask materials Y direction respectively, described directions X and described Y direction quadrature, described photomask materials is coated with photoresists, and described first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region and the 4th rectangle exposure file region are all not overlapping with described graphics field;
First rectangle exposure file, second rectangle exposure file, the 3rd rectangle exposure file, the 4th rectangle exposure file and photoresists to described first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region, the 4th rectangle exposure file region expose;
According to the exposure vestige that leaves on the described photomask materials photoresists at described photomask materials edge are removed, to remove the chromium residues at described photomask materials edge.
3. method as claimed in claim 2, it is characterized in that, the length value of described first rectangle exposure file, second rectangle exposure file, the 3rd rectangle exposure file and the 4th rectangle exposure file respectively with described photomask materials that it is placed on the corresponding edge on one side the length of side equate, width value respectively with described photomask materials that it is placed on the corresponding edge on one side to described graphics field apart from equating.
4. method as claimed in claim 2, it is characterized in that, when described exposure directions is the Y direction, first rectangle exposure file, second rectangle exposure file and photoresists to described first rectangle exposure file region and second rectangle exposure file region expose earlier, again described photomask materials, the 3rd rectangle exposure file and the 4th rectangle exposure file are revolved turn 90 degrees after, the 3rd rectangle exposure file, the 4th rectangle exposure file and the photoresists of described the 3rd rectangle exposure file region and the 4th rectangle exposure file region are exposed.
5. method as claimed in claim 2, it is characterized in that, when described exposure directions is directions X, the 3rd rectangle exposure file, the 4th rectangle exposure file and photoresists to described the 3rd rectangle exposure file region and the 4th rectangle exposure file region expose earlier, again described photomask materials, first rectangle exposure file and second rectangle exposure file are revolved turn 90 degrees after, first rectangle exposure file, second rectangle exposure file and the photoresists of described first rectangle exposure file region and second rectangle exposure file region are exposed.
6. method as claimed in claim 2 is characterized in that, the energy of described exposure makes 2 times of used energy for described photomask materials is exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010243692A CN101923292B (en) | 2010-08-03 | 2010-08-03 | Removal method of chromium residues on border of mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010243692A CN101923292B (en) | 2010-08-03 | 2010-08-03 | Removal method of chromium residues on border of mask |
Publications (2)
| Publication Number | Publication Date |
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| CN101923292A true CN101923292A (en) | 2010-12-22 |
| CN101923292B CN101923292B (en) | 2012-10-17 |
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| CN201010243692A Active CN101923292B (en) | 2010-08-03 | 2010-08-03 | Removal method of chromium residues on border of mask |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103399682A (en) * | 2013-08-14 | 2013-11-20 | 芜湖长信科技股份有限公司 | Method for removing short circuit metal residues in exact position at periphery of metal bridge frame with touch screen |
| CN105652602A (en) * | 2014-11-28 | 2016-06-08 | 细美事有限公司 | Edge exposure apparatus and method and substrate apparatus treating |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000098591A (en) * | 1998-09-22 | 2000-04-07 | Dainippon Printing Co Ltd | Correcting method of photomask defect |
| JP2006128358A (en) * | 2004-10-28 | 2006-05-18 | Renesas Technology Corp | Method for correcting defective pattern of mask |
| JP2008102402A (en) * | 2006-10-20 | 2008-05-01 | Toppan Printing Co Ltd | Method for manufacturing halftone phase shift mask |
| CN101387827A (en) * | 2007-09-14 | 2009-03-18 | 北京京东方光电科技有限公司 | Half-tone mask plate and method for manufacturing same |
| US20100035028A1 (en) * | 2008-08-07 | 2010-02-11 | Hoya Corporation | Mask blank substrate, mask blank, photomask, and methods of manufacturing the same |
-
2010
- 2010-08-03 CN CN201010243692A patent/CN101923292B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000098591A (en) * | 1998-09-22 | 2000-04-07 | Dainippon Printing Co Ltd | Correcting method of photomask defect |
| JP2006128358A (en) * | 2004-10-28 | 2006-05-18 | Renesas Technology Corp | Method for correcting defective pattern of mask |
| JP2008102402A (en) * | 2006-10-20 | 2008-05-01 | Toppan Printing Co Ltd | Method for manufacturing halftone phase shift mask |
| CN101387827A (en) * | 2007-09-14 | 2009-03-18 | 北京京东方光电科技有限公司 | Half-tone mask plate and method for manufacturing same |
| US20100035028A1 (en) * | 2008-08-07 | 2010-02-11 | Hoya Corporation | Mask blank substrate, mask blank, photomask, and methods of manufacturing the same |
Non-Patent Citations (2)
| Title |
|---|
| 《Semiconductor Technology》 20081031 陈尧，等 掩模版雾状缺陷的解决方案 第869页-第871页 1-6 第33卷, 第10期 2 * |
| 《半导体光电》 20050630 邓涛，等 光刻工艺中缺陷来源的分析 第229页-第231页 1-6 第26卷, 第3期 2 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103399682A (en) * | 2013-08-14 | 2013-11-20 | 芜湖长信科技股份有限公司 | Method for removing short circuit metal residues in exact position at periphery of metal bridge frame with touch screen |
| CN103399682B (en) * | 2013-08-14 | 2016-08-10 | 芜湖长信科技股份有限公司 | Touch screen metal bridge formation periphery determines the minimizing technology of position short circuit metallic residual |
| CN105652602A (en) * | 2014-11-28 | 2016-06-08 | 细美事有限公司 | Edge exposure apparatus and method and substrate apparatus treating |
| CN105652602B (en) * | 2014-11-28 | 2018-07-17 | 细美事有限公司 | Edge exposure device and method, substrate board treatment |
Also Published As
| Publication number | Publication date |
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| CN101923292B (en) | 2012-10-17 |
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Denomination of invention: Removal method of chromium residues on border of mask Effective date of registration: 20150821 Granted publication date: 20121017 Pledgee: Shenzhen high tech investment and financing Company limited by guarantee Pledgor: SHENZHEN NEWWAY PHOTOMASK MAKING CO., LTD. Registration number: 2015990000707 |
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