CN101923292B - Removal method of chromium residues on border of mask - Google Patents
Removal method of chromium residues on border of mask Download PDFInfo
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- CN101923292B CN101923292B CN201010243692A CN201010243692A CN101923292B CN 101923292 B CN101923292 B CN 101923292B CN 201010243692 A CN201010243692 A CN 201010243692A CN 201010243692 A CN201010243692 A CN 201010243692A CN 101923292 B CN101923292 B CN 101923292B
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 89
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 238000005530 etching Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 239000002699 waste material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000011651 chromium Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000008034 disappearance Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- -1 chromium powder metal oxide Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The embodiment of the invention relates to a removal method of chromium residues on the border of a mask. The method comprises the following steps of: firstly, arranging an exposure file on the border of a mask material with a graphic area, wherein the area of the exposure file is not stacked with the graphic area; then, exposing the exposure file in the exposure file area and a sensitive adhesive coated on the mask material; the energy of the exposure is one and a half times, twice or three times as much as the energy of the exposure on the mask material; and finally, removing the sensitive adhesive on the border of the mask material according to an exposure track remained on the mask material when the chromium residues exist on the border of the mask material and also removing the chromium residues on the border of the mask material. By adopting method of the embodiment, the chromium residues on the border of the mask material can be removed, the problem of graphic miss brought by adopting an etching removal method through a chemical reaction is avoided, the mask quality is ensured against waste and the material and operation costs are saved.
Description
Technical field
The present invention relates to electronic manufacturing field, relate in particular to a kind of chromium residues on border of mask removal method.
Background technology
High speed development along with electronic industry; Liquid crystal display (Liquid Crystal Display, LCD), (Integrated Circuit IC) waits in the electronic manufacturing industry integrated circuit; Light shield becomes one of requisite important mould, and it is used more and more widely.General light shield manufacture is crossed and claimed as follows: with soda glass or quartz glass is base material; Form light shield layer at its surface-coated one deck chromium (Cr) layer; On the chromium layer, apply one deck chromium oxide layer again, at last at chromium oxide layer surface-coated one deck photoresists, after use software control exposure device carries out electron beam exposure or radium-shine exposure to it; Pass through chemical reaction again; Promptly through chemical liquid photoresists and part chromium layer are removed, thereby formed the figure that is designed, above-mentioned figure chromium is imprinted on the manufacturing process of the process light shield of base material.During the making of light shield, it is that the center is rotated formula and applies that the photoresists of the surperficial the superiors mainly adopt with the base material when applying, so; When rotation coated feel optical cement, the thickness of the photoresists of each position is variant on the whole surface, and particularly the regional photoresists of the about 10-20mm width in light shield edge are thicker relatively; Like this, after above-mentioned light shield manufacture process, be prone to a large amount of chromium residues in the zone of the about 10-20mm width in light shield edge; Residual chromium can be produced the very big quality influence of generation to using light shield; Particularly, when using light shield to produce, when the light shield edge contacts with the anchor clamps of folder light shield; The chromium powder that the chromium residues at light shield edge forms after by clamp wear is prone to drop at operation field; Cause product polluted by chromium powder, quality does not reach the electronic manufacturing industry requirement, and is particularly all the more so in the IC semicon industry; In addition, (when ito glass was carried out cutting operation, chromium powder can hinder cutting to the also easy pollution nano indium tin of chromium powder metal oxide like this, caused cutting accuracy not reach production requirement for Indium Tin Oxides, ITO) glass, caused ITO cutting quality to descend.
In order to remove chromium residues, generally adopt etching to pass through chemical reaction and remove method, this method is carried out wiping toward the chromium residues zone at light shield edge after mainly adopting cotton rod to be stained with etching solution, so that etching solution and chromium generation chemical reaction are removed chromium residues.But because etching solution is a liquid, it can spread in wiping process unavoidably, and when near the chromium residues this method removal figure of employing, etching solution can infiltrate graph area, causes the disappearance of figure, causes light shield to be scrapped.
Summary of the invention
Embodiment of the invention technical matters to be solved is, a kind of chromium residues on border of mask removal method is provided, and can when removing chromium residues on border of mask, ensure the integrality of figure in the light shield.
For solving the problems of the technologies described above, the embodiment of the invention adopts following technical scheme:
A kind of chromium residues on border of mask removal method comprises:
The exposure file is placed the photomask materials edge that is provided with the graphics field, and said photomask materials is coated with photoresists, and said exposure file region is not overlapping with said graphics field;
Exposure file and photoresists to said exposure file region make public, and the energy of said exposure makes 1.5,2 or 3 times of used energy for said photomask materials is made public;
Exposure vestige according to leaving on the said photomask materials is removed the photoresists at said photomask materials edge, to remove the chromium residues at said photomask materials edge.
A kind of chromium residues on border of mask removal method comprises:
First rectangle exposure file, second rectangle exposure file are vertically placed the edge of the photomask materials directions X that is provided with the graphics field respectively; The 3rd rectangle exposure file, the 4th rectangle exposure file are laterally placed the edge of said photomask materials Y direction respectively; Said directions X and said Y direction quadrature; Said photomask materials is coated with photoresists, and said first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region and the 4th rectangle exposure file region are all not overlapping with said graphics field;
First rectangle exposure file, second rectangle exposure file, the 3rd rectangle exposure file, the 4th rectangle exposure file and photoresists to said first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region, the 4th rectangle exposure file region make public, and the energy of said exposure makes 1.5,2 or 3 times of used energy for said photomask materials is made public;
Exposure vestige according to leaving on the said photomask materials is removed the photoresists at said photomask materials edge, to remove the chromium residues at said photomask materials edge.
The beneficial effect of the embodiment of the invention is:
Through a kind of chromium residues on border of mask removal method is provided; The file that at first will make public places the edge of the photomask materials that is provided with the graphics field; Certainly, exposure file region is not overlapping with the graphics field, and exposure file and the coated photoresists of photomask materials to exposure file region make public then; The energy of said exposure makes 1.5,2 or 3 times of used energy for said photomask materials is made public; When there is chromium residues at the photomask materials edge, the photoresists at photomask materials edge are removed at last, just removed the chromium residues at photomask materials edge simultaneously according to the exposure vestige that leaves on the photomask materials.Like this, in the chromium residues of removing the photomask materials edge, avoid adopting etching to remove the problem of the figure disappearance that method brings, guaranteed the light shield quality and discarded, practiced thrift material, operating cost through chemical reaction.
Below in conjunction with accompanying drawing the embodiment of the invention is done further to describe in detail.
Description of drawings
Fig. 1 is the main process flow diagram of the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 2 is a photomask materials size synoptic diagram in the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 3 is first rectangle exposure file and second rectangle exposure document size synoptic diagram in the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 4 is the 3rd rectangle exposure file and the 4th a rectangle exposure document size synoptic diagram in the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 5 is the schematic layout pattern when placing each rectangle exposure file on the photomask materials in the chromium residues on border of mask removal method of the embodiment of the invention.
Fig. 6 is that photomask materials carries out formal exposed areas size synoptic diagram in the chromium residues on border of mask removal method of the embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of chromium residues on border of mask removal method, and it mainly comprises:
The file that at first will make public places the edge of the photomask materials that is provided with the graphics field; Certainly, shape, the quantity of exposure file all can in the light of actual conditions be selected for use, for example; When light shield is square or rectangle; Corresponding exposure file can correspondingly adopt rectangle or crescent etc., and the chromium residues situation at each edge, limit of photomask materials might be identical or different, at this moment; Can the exposure file be set in the edge correspondence that photomask materials has serious one or more limits of chromium residues or chromium residues; And in order to stay the exposure vestige in the illumination edge of materials, the shape of exposure file, big I adopt according to actual conditions, but need to guarantee that the exposure file is not overlapping with the graphics field in the region at photomask materials edge;
Then exposure file and photoresists on the exposure file region are made public; When exposure file when being a plurality of, can make public to each edge exposure file region of photomask materials successively according to the order of the program of saving, the energy setting of exposure also can be selected to adopt according to actual conditions; For example adopt photomask materials make public 1.5 times, 2 times of used energy or 3 times etc.; At this moment, according to the reaction of exposure area high-energy, the photoresists on the photomask materials also can be exposed to the sun;
At last when there is chromium residues at the photomask materials edge; Exposure vestige according to leaving on the photomask materials is removed the photoresists at photomask materials edge; Just removed the chromium residues at photomask materials edge simultaneously, wherein, can require to choose the opportunity of removing the edge photoresists according to reality.
Like this, in the chromium residues of removing the photomask materials edge, avoid adopting etching to remove the problem of the figure disappearance that method brings, guaranteed the light shield quality and discarded, practiced thrift material, operating cost through chemical reaction.
Through a specific embodiment chromium residues on border of mask removal method of the present invention is described below.
With reference to Fig. 1, the chromium residues on border of mask removal method of the embodiment of the invention mainly comprises the steps:
101, select a photomask materials of coated feel optical cement;
102; According to two groups of rectangle exposures of photomask materials size design file; First group of rectangle exposure file comprises first rectangle exposure file and second rectangle exposure file, and second group of rectangle exposure file comprises the 3rd rectangle exposure file and the 4th rectangle exposure file, and setting exposure directions is the Y direction; With Y direction quadrature be directions X; The length direction of first group of rectangle exposure file is parallel to the Y direction, and the length direction of second group of rectangle exposure file is parallel to directions X, and the length value of each first rectangle exposure file, second rectangle exposure file, the 3rd rectangle exposure file and the 4th rectangle exposure file respectively with said photomask materials that it is placed on the corresponding edge on one side the length of side equate, width value respectively with said photomask materials that it is placed on the corresponding edge on one side to said graphics field apart from equating; For example shown in Figure 2; The length of side of photomask materials on directions X is 609.6mm (length), and the length of side on the Y direction is 508mm (wide), and the graphics field in the photomask materials is 20mm to each back gauge of photomask materials; Then first rectangle exposure file and second rectangle exposure document size are all as shown in Figure 3; Its length value is that 508mm, width value are 20mm, and the 3rd rectangle exposure file and the 4th rectangle exposure document size are all as shown in Figure 4, and its length value is that 609.6mm, width value also are 20mm;
103; As shown in Figure 5; First rectangle exposure file and second rectangle exposure file are vertically placed the edge of photomask materials directions X respectively; The 3rd rectangle exposure file, the 4th rectangle exposure file are laterally placed the edge of said photomask materials Y direction respectively, adopted above-mentioned photomask materials size and each rectangle exposure document size just to guarantee that first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region and the 4th rectangle exposure file region are all not overlapping with said graphics field;
104; First rectangle exposure file, second rectangle exposure file and photoresists to first rectangle exposure file region and second rectangle exposure file region make public; The energy of this exposure makes 2 times of used energy (standard exposure energy when promptly making light shield) for photomask materials is made public; This moment, not only first rectangle exposure file, second rectangle exposure file were made public, and also can be exposed to the sun and softened together with the photoresists of first rectangle exposure file region and second rectangle exposure file region;
105; Again with photomask materials, the 3rd rectangle exposure file and the 4th rectangle exposure file revolve turn 90 degrees after; The 3rd rectangle exposure file, the 4th rectangle exposure file and photoresists to the 3rd rectangle exposure file region and the 4th rectangle exposure file region make public; The energy of this exposure makes 2 times of used energy (standard exposure energy when promptly making light shield) for photomask materials is made public; This moment, not only the 3rd rectangle exposure file, the 4th rectangle exposure file were made public, and also can be exposed to the sun and softened together with the photoresists of the 3rd rectangle exposure file region and the 4th rectangle exposure file region;
Open double exposure through 104,105 minutes, but exposed areas not in the middle of the rapid Optimum photomask materials reaches the effect of quick completion;
106, according to the vestige of 104,105 exposures the softening photoresists at photomask materials edge are removed, particularly; To 104,105 step gained photomask materials edges exposed areas, does not remove earlier in promptly softening photoresists zone, but after treating the follow-up light that formally exposed to the sun; Production procedure according to light shield; Develop, in the etching process because the photoresists zone at edge all is softened, and softening degree is eager to excel than formal exposure the time; So the photoresists on the limit can be removed very clean when developing; When etching, just can the chromium metal level at edge be removed totally, so just can not produce the chromium residues phenomenon, also the chromium residues phenomenon can not occur even the photoresists at edge are inhomogeneous.
When removing, just removed the chromium residues at photomask materials edge the photoresists that the photomask materials edge is softening; As shown in Figure 6; Left in the photomask materials after photoresists are removed, to carry out follow-up formal exposed areas size be 569.6mm * 468mm; (this formal exposure area size is 569.6mm * 468mm) can to proceed formal exposure process in the light shield production run afterwards; After having removed softening photoresists,, reached the effect that reduces the time shutter because formal exposure area narrows down to 569.6 present * 468mm from original 609.6mm * 508mm.
The following points that need explanation:
1, when exposure directions is directions X; Can be earlier the 3rd rectangle exposure file, the 4th rectangle exposure file and the photoresists of above-mentioned the 3rd rectangle exposure file region and the 4th rectangle exposure file region be made public; Again with above-mentioned photomask materials, first rectangle exposure file and second rectangle exposure file revolve turn 90 degrees after, first rectangle exposure file, second rectangle exposure file and the photoresists of above-mentioned first rectangle exposure file region and second rectangle exposure file region are made public;
2, chromium residues on border of mask removal method shown in Figure 1 loads in the light shield production procedure and carries out; And before the light shield production procedure is carried out; Can adopt the exposure file that designs that photomask materials is made public in advance; Can this version be preserved after exposure is accomplished, use when light shield is produced so that formally carry out.
The above is an embodiment of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also are regarded as protection scope of the present invention.
Claims (5)
1. a chromium residues on border of mask removal method is characterized in that, comprising:
The exposure file is placed the photomask materials edge that is provided with the graphics field, and said photomask materials is coated with photoresists, and said exposure file region is not overlapping with said graphics field;
Exposure file and photoresists to said exposure file region make public, and the energy of exposure is 1.5,2 or 3 times of used energy that said photomask materials is made public;
Exposure vestige according to leaving on the said photomask materials is removed the photoresists at said photomask materials edge, to remove the chromium residues at said photomask materials edge.
2. a chromium residues on border of mask removal method is characterized in that, comprising:
First rectangle exposure file, second rectangle exposure file are vertically placed the edge of the photomask materials directions X that is provided with the graphics field respectively; The 3rd rectangle exposure file, the 4th rectangle exposure file are laterally placed the edge of said photomask materials Y direction respectively; Said directions X and said Y direction quadrature; Said photomask materials is coated with photoresists, and said first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region and the 4th rectangle exposure file region are all not overlapping with said graphics field;
First rectangle exposure file, second rectangle exposure file, the 3rd rectangle exposure file, the 4th rectangle exposure file and photoresists to said first rectangle exposure file region, second rectangle exposure file region, the 3rd rectangle exposure file region, the 4th rectangle exposure file region make public, and the energy of exposure is 1.5,2 or 3 times of used energy that said photomask materials is made public;
Exposure vestige according to leaving on the said photomask materials is removed the photoresists at said photomask materials edge, to remove the chromium residues at said photomask materials edge.
3. method as claimed in claim 2; It is characterized in that, the length value of said first rectangle exposure file, second rectangle exposure file, the 3rd rectangle exposure file and the 4th rectangle exposure file respectively with said photomask materials that it is placed on the corresponding edge on one side the length of side equate, width value respectively with said photomask materials that it is placed on the corresponding edge on one side to said graphics field apart from equating.
4. method as claimed in claim 2; It is characterized in that; When exposure directions is the Y direction; First rectangle exposure file, second rectangle exposure file and photoresists to said first rectangle exposure file region and second rectangle exposure file region make public earlier; Again with said photomask materials, the 3rd rectangle exposure file and the 4th rectangle exposure file revolve turn 90 degrees after, the 3rd rectangle exposure file, the 4th rectangle exposure file and the photoresists of said the 3rd rectangle exposure file region and the 4th rectangle exposure file region are made public.
5. method as claimed in claim 2; It is characterized in that; When exposure directions is directions X; The 3rd rectangle exposure file, the 4th rectangle exposure file and photoresists to said the 3rd rectangle exposure file region and the 4th rectangle exposure file region make public earlier; Again with said photomask materials, first rectangle exposure file and second rectangle exposure file revolve turn 90 degrees after, first rectangle exposure file, second rectangle exposure file and the photoresists of said first rectangle exposure file region and second rectangle exposure file region are made public.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010243692A CN101923292B (en) | 2010-08-03 | 2010-08-03 | Removal method of chromium residues on border of mask |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010243692A CN101923292B (en) | 2010-08-03 | 2010-08-03 | Removal method of chromium residues on border of mask |
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| CN101923292A CN101923292A (en) | 2010-12-22 |
| CN101923292B true CN101923292B (en) | 2012-10-17 |
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| CN103399682B (en) * | 2013-08-14 | 2016-08-10 | 芜湖长信科技股份有限公司 | Touch screen metal bridge formation periphery determines the minimizing technology of position short circuit metallic residual |
| KR101681636B1 (en) * | 2014-11-28 | 2016-12-02 | 세메스 주식회사 | Apparatus and method for edge exposure, Apparatus for treating a substrate |
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| CN101387827A (en) * | 2007-09-14 | 2009-03-18 | 北京京东方光电科技有限公司 | Half-tone mask plate and method for manufacturing same |
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| JP2000098591A (en) * | 1998-09-22 | 2000-04-07 | Dainippon Printing Co Ltd | Correcting method of photomask defect |
| JP2006128358A (en) * | 2004-10-28 | 2006-05-18 | Renesas Technology Corp | Method for correcting defective pattern of mask |
| JP5003094B2 (en) * | 2006-10-20 | 2012-08-15 | 凸版印刷株式会社 | Method for manufacturing halftone phase shift mask |
| JP5222660B2 (en) * | 2008-08-07 | 2013-06-26 | Ｈｏｙａ株式会社 | Mask blank substrate manufacturing method, mask blank manufacturing method, photomask manufacturing method, and semiconductor device manufacturing method |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101387827A (en) * | 2007-09-14 | 2009-03-18 | 北京京东方光电科技有限公司 | Half-tone mask plate and method for manufacturing same |
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| Title |
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| JP特开2000-98591A 2000.04.07 |
| JP特开2006-128358A 2006.05.18 |
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| 邓涛，等.光刻工艺中缺陷来源的分析.《半导体光电》.2005,第26卷(第3期),第229页-第231页. * |
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