CN101920439A - Reeling, welding and knurling process for inner and outer surfaces of sputtered tantalum ring - Google Patents
Reeling, welding and knurling process for inner and outer surfaces of sputtered tantalum ring Download PDFInfo
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- CN101920439A CN101920439A CN 201010258812 CN201010258812A CN101920439A CN 101920439 A CN101920439 A CN 101920439A CN 201010258812 CN201010258812 CN 201010258812 CN 201010258812 A CN201010258812 A CN 201010258812A CN 101920439 A CN101920439 A CN 101920439A
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Abstract
The invention relates to a reeling, welding and knurling process for inner and outer surfaces of a sputtered tantalum ring, which comprises the following steps of: preparing a tantalum bar; reeling; welding two ends of the tantalum bar; performing heat treatment, shaping, performing knurling on the inner and outer surfaces, turning circular arcs on side edges, and performing knurling on the circular arcs on the side edges; and cutting off welded junctions. Through the process, uniform and consistent 80TPI raised lozenge patterns can be formed on the inner and outer surfaces and side edges of the sputtered open tantalum ring so as to meet the use requirement of semiconductor users.
Description
Technical field
The invention belongs to the mechanical processing technique of tantalum material, particularly relate to a kind of volume circle welding annular knurl technology of sputtering tantalum ring surfaces externally and internally.
Background technology
Physical vapor deposition (PVD) is one of technology of most critical in the semiconductor chip production process, its objective is the form of the compound of metal or metal with film deposited on silicon chip or other the substrate, and, finally form distribution structure complicated in the semiconductor chip subsequently by the cooperating of technologies such as photoetching and corrosion.Physical vapour deposition (PVD) is finished by the sputter board, and sputtering tantalum ring is exactly a very important crucial consumptive material that is used for above-mentioned technology.
The main effect of sputtering tantalum ring in semiconductor technology has 2 points:
First: the movement locus of constraint sputtering particle, play the effect of focusing;
Second: the big particle that produces in the absorption sputter procedure, play the effect of purification.
Since the special environment for use of sputtering tantalum ring, thereby its requirement to surface knurling is very strict, and be specially: surface knurling is the rhombus that 80TPI protrudes, and 80 road decorative patterns had both been arranged in one inch scope, and annular knurl is even, the no visual flat spot in surface.But, in actual production, there is following difficult point:
First: ring is the opening ring, and surface knurling not only requires the lines unanimity, and requires depth unanimity:
Second: the ring side is a circular arc;
The 3rd: circular arc requires annular knurl consistent with surface knurling.
At present, the annular knurl of sputtering tantalum ring surfaces externally and internally can only be produced abroad, and domestic also do not have relevant mature technology to exist.
Summary of the invention
The objective of the invention is to overcome the defective of above-mentioned prior art, provide a kind of and can produce the volume circle welding annular knurl technology that texture structure satisfies the sputtering tantalum ring surfaces externally and internally of semiconductor user instructions for use.
For achieving the above object, the present invention adopts following technical proposals:
A kind of volume circle welding annular knurl technology of sputtering tantalum ring surfaces externally and internally, it is characterized in that technical process is: at first prepare the tantalum bar, the volume circle welds tantalum bar two ends, heat treatment, shaping, surfaces externally and internally annular knurl then, turning side circular arc carries out side circular arc annular knurl, and the final cutting weld bond gets final product;
The tantalum bar smooth surface of above-mentioned preparation;
Above-mentioned volume bowlder is controlled circularity≤1.0mm at the upper and lower surface pad rubber skin of tantalum bar;
Weld width≤5mm during above-mentioned welding, the weld seam polishing, postwelding is eliminated projecting point by grinding;
Above-mentioned heat treatment is meant that it is to be incubated 60～120 minutes under 30%～35% the condition of tantalum fusing point that the tantalum bar is placed temperature;
Above-mentioned shaping control circularity≤0.2mm;
Above-mentioned side circular arc annular knurl adopts common twill knurled wheel, by changing the knife rest angle, divides the annular knurl of finishing whole circular arc for 7 times, and the knife rest angle is followed successively by: 45 °, 60 °, 75 °, 90 °, 105 °, 120 ° and 135 °.
Can realize the protruding Argyle of 80TPI of the formation uniformity of the surfaces externally and internally of opening sputtering tantalum ring and side by the present invention, thereby satisfy semiconductor user's instructions for use.
Description of drawings
Fig. 1 is the structural representation of opening sputtering tantalum ring of the present invention;
Fig. 2 is the texture schematic diagram of the surfaces externally and internally of Fig. 1;
Fig. 3 is a side texture schematic diagram among Fig. 1;
Fig. 4 is a side circular arc annular knurl schematic diagram.
The specific embodiment
The concrete processing step of the volume circle welding annular knurl of sputtering tantalum ring surfaces externally and internally of the present invention is as follows:
1, preparation tantalum bar
Prepare the tantalum bar according to production requirement, in order to satisfy carrying out smoothly of subsequent technique, the tantalum bar of preparation wants smooth surface to be equipped with the tantalum bar, does not have defectives such as scratching, cheat point.
2, volume circle
Utilize accurate furling plate round machine volume circle, control circularity≤1.0mm, the volume bowlder is noted the protection surface, at the rubber skin of tantalum bar upper and lower surface pad 1.5mm.
3, welding
In order to realize the annular knurl requirement of ring surfaces externally and internally, the ring behind the volume circle is carried out the termination welding, weld width≤5mm, the necessary polishing of weld seam, postwelding is eliminated projecting point by grinding.
4, heat treatment
Main purpose reduces weld hardness, simultaneously must assurance can not change the interior tissue of material, and temperature is 30%～35% of a tantalum fusing point, temperature retention time 60～120 minutes.
5, shaping
The welding ring is carried out shaping, guarantees later stage annular knurl requirement, circularity≤0.2mm.
6, surfaces externally and internally annular knurl
The necessary uniformity of surfaces externally and internally annular knurl, the surface does not have visible dots.
7, turning side circular arc
Process equipment is an engine lathe, and the general profile of first turning utilizes the turning of special-purpose circular arc lathe tool then.
8, side circular arc annular knurl
The used knurled wheel of side circular arc annular knurl is common twill knurled wheel, by changing the knife rest angle, divides the annular knurl of finishing whole circular arc for 7 times, and the knife rest angle is followed successively by: 45 °, 60 °, 75 °, 90 °, 105 °, 120 ° and 135 °, as shown in Figure 4.
9, weld bond cuts off
After finishing surface knurling, in order to realize the termination annular knurl, weld bond is cut off, cut-out is of a size of: 6.35mm.
Claims (7)
1. the volume of sputtering tantalum ring surfaces externally and internally circle welding annular knurl technology is characterized in that technical process is: at first prepare the tantalum bar, roll up circle, tantalum bar two ends are welded, heat treatment, shaping, surfaces externally and internally annular knurl then, turning side circular arc carries out side circular arc annular knurl, and the final cutting weld bond gets final product.
2. according to the volume circle welding annular knurl technology of the described sputtering tantalum ring surfaces externally and internally of claim 1, it is characterized in that: the tantalum bar smooth surface of above-mentioned preparation.
3. according to the volume circle welding annular knurl technology of the described sputtering tantalum ring surfaces externally and internally of claim 1, it is characterized in that: above-mentioned volume bowlder is controlled circularity≤1.0mm at the upper and lower surface pad rubber skin of tantalum bar.
4. according to the volume of the described sputtering tantalum ring surfaces externally and internally of claim 1 circle welding annular knurl technology, it is characterized in that: weld width≤5mm during above-mentioned welding, the weld seam polishing, postwelding is eliminated projecting point by grinding.
5. according to the volume of the described sputtering tantalum ring surfaces externally and internally of claim 1 circle welding annular knurl technology, it is characterized in that: above-mentioned heat treatment is meant that it is to be incubated 60～120 minutes under 30%～35% the condition of tantalum fusing point that the tantalum bar is placed temperature.
6. according to the volume circle welding annular knurl technology of the described sputtering tantalum ring surfaces externally and internally of claim 1, it is characterized in that: above-mentioned shaping control circularity≤0.2mm.
7. the volume circle according to the described sputtering tantalum ring surfaces externally and internally of claim 1 welds annular knurl technology, it is characterized in that: above-mentioned side circular arc annular knurl adopts common twill knurled wheel, by changing the knife rest angle, divide the annular knurl of finishing whole circular arc for 7 times, the knife rest angle is followed successively by: 45 °, 60 °, 75 °, 90 °, 105 °, 120 ° and 135 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010258812 CN101920439B (en) | 2010-08-20 | 2010-08-20 | Reeling, welding and knurling process for inner and outer surfaces of sputtered tantalum ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010258812 CN101920439B (en) | 2010-08-20 | 2010-08-20 | Reeling, welding and knurling process for inner and outer surfaces of sputtered tantalum ring |
Publications (2)
| Publication Number | Publication Date |
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| CN101920439A true CN101920439A (en) | 2010-12-22 |
| CN101920439B CN101920439B (en) | 2011-10-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010258812 Expired - Fee Related CN101920439B (en) | 2010-08-20 | 2010-08-20 | Reeling, welding and knurling process for inner and outer surfaces of sputtered tantalum ring |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106493525A (en) * | 2016-12-23 | 2017-03-15 | 有研亿金新材料有限公司 | A kind of preparation method of sputtering titanacycle |
| CN108942110A (en) * | 2018-08-21 | 2018-12-07 | 宁波江丰电子材料股份有限公司 | The processing technology of ring shoulder annular knurl |
| CN112318063A (en) * | 2020-09-08 | 2021-02-05 | 有研亿金新材料有限公司 | Method for processing surface patterns of sputtering ring accessory |
Citations (7)
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|---|---|---|---|---|
| WO1997001653A2 (en) * | 1995-06-28 | 1997-01-16 | Hmt Technology Corporation | Sputtering shield |
| WO2004043631A1 (en) * | 2002-11-07 | 2004-05-27 | Honeywell International Inc. | Die cast sputter targets |
| US20050082258A1 (en) * | 2002-07-16 | 2005-04-21 | Jaeyeon Kim | Methods of treating non-sputtered regions of PVD target constructions to form particle traps |
| CN1757266A (en) * | 2003-02-28 | 2006-04-05 | 霍尼韦尔国际公司 | Coil constructions configured for utilization in physical vapor deposition chambers, and methods of forming coil constructions |
| US20090194414A1 (en) * | 2008-01-31 | 2009-08-06 | Nolander Ira G | Modified sputtering target and deposition components, methods of production and uses thereof |
| CN101565819A (en) * | 2009-06-04 | 2009-10-28 | 西北稀有金属材料研究院 | Magnetic controlled sputtering ring |
| CN201538814U (en) * | 2009-11-12 | 2010-08-04 | 宁波江丰电子材料有限公司 | Component of tantalum sputtering ring |
-
2010
- 2010-08-20 CN CN 201010258812 patent/CN101920439B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997001653A2 (en) * | 1995-06-28 | 1997-01-16 | Hmt Technology Corporation | Sputtering shield |
| US20050082258A1 (en) * | 2002-07-16 | 2005-04-21 | Jaeyeon Kim | Methods of treating non-sputtered regions of PVD target constructions to form particle traps |
| WO2004043631A1 (en) * | 2002-11-07 | 2004-05-27 | Honeywell International Inc. | Die cast sputter targets |
| CN1757266A (en) * | 2003-02-28 | 2006-04-05 | 霍尼韦尔国际公司 | Coil constructions configured for utilization in physical vapor deposition chambers, and methods of forming coil constructions |
| US20090194414A1 (en) * | 2008-01-31 | 2009-08-06 | Nolander Ira G | Modified sputtering target and deposition components, methods of production and uses thereof |
| CN101565819A (en) * | 2009-06-04 | 2009-10-28 | 西北稀有金属材料研究院 | Magnetic controlled sputtering ring |
| CN201538814U (en) * | 2009-11-12 | 2010-08-04 | 宁波江丰电子材料有限公司 | Component of tantalum sputtering ring |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106493525A (en) * | 2016-12-23 | 2017-03-15 | 有研亿金新材料有限公司 | A kind of preparation method of sputtering titanacycle |
| CN108942110A (en) * | 2018-08-21 | 2018-12-07 | 宁波江丰电子材料股份有限公司 | The processing technology of ring shoulder annular knurl |
| CN112318063A (en) * | 2020-09-08 | 2021-02-05 | 有研亿金新材料有限公司 | Method for processing surface patterns of sputtering ring accessory |
| CN112318063B (en) * | 2020-09-08 | 2022-01-18 | 有研亿金新材料有限公司 | Method for processing surface patterns of sputtering ring accessory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101920439B (en) | 2011-10-26 |
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