CN201538814U - Component of tantalum sputtering ring - Google Patents
Component of tantalum sputtering ring Download PDFInfo
- Publication number
- CN201538814U CN201538814U CN2009202663583U CN200920266358U CN201538814U CN 201538814 U CN201538814 U CN 201538814U CN 2009202663583 U CN2009202663583 U CN 2009202663583U CN 200920266358 U CN200920266358 U CN 200920266358U CN 201538814 U CN201538814 U CN 201538814U
- Authority
- CN
- China
- Prior art keywords
- ring assemblies
- tantalum
- arc angle
- tantalum sputter
- arc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 57
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 238000004544 sputter deposition Methods 0.000 title abstract description 9
- 238000000429 assembly Methods 0.000 claims description 48
- 230000000712 assembly Effects 0.000 claims description 48
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000000427 thin-film deposition Methods 0.000 abstract description 4
- 238000004901 spalling Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000005477 sputtering target Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
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- Physical Vapour Deposition (AREA)
Abstract
A component of a tantalum sputtering ring comprises an annular body with an opening, an arc corner is arranged in the opening position of the annular body, and the arc diameter of the arc corner is larger than 6.35 mm. The component of the tantalum sputtering ring can solve the problem that the thin film deposition technology is influenced by the easy spalling of the arc corner zone of the present component of the tantalum sputtering ring.
Description
Technical field
The utility model relates to sputtering target material, particularly relates to a kind of tantalum sputter ring assemblies.
Background technology
Sputter is a kind of plated film mode of physical vapor deposition (PVD), and it is to use the charged particle bombardment target, makes target generation surface atom collision and the transfer of energy and momentum takes place, and target atom is overflowed from the surface and is deposited on process on the substrate material.Utilize sputtering technology can make substrate material surface obtain metal, alloy or thin dielectric film.
Tantalum sputter ring assemblies is a kind of metal targets commonly used, Fig. 1 is a kind of front view of tantalum sputter ring assemblies, described tantalum sputter ring assemblies comprises the ring body 11 with opening 10, ring body 11 has arc angle (R angle) 12 in opening 10 positions, shown in the side-view of the tantalum sputter ring assemblies of the ring structure of Fig. 2, the ring body 11 of described tantalum sputter ring assemblies comprises 4 arc angles 12.
Yet above-mentioned tantalum sputter ring assemblies in use occurs the phenomenon that tantalum material peels off (peeling) through regular meeting in the arc angle zone, and in a single day the tantalum material that peels off drops on the substrate material, will influence depositing of thin film, thereby causes product rejection.
The utility model content
The problem that the utility model solves is that existing tantalum sputter ring assemblies peeling phenomenon occurs easily in the arc angle zone and influences the problem of thin film deposition processes.
For addressing the above problem, the utility model provides a kind of tantalum sputter ring assemblies, comprises the ring body with opening, and described ring body has arc angle at aperture position, and the arc radius of described arc angle is greater than 6.35mm.
Optionally, the arc radius of described arc angle is 10～20mm.
Optionally, the width of described opening is 6.35 ± 0.25mm.
Optionally, the diameter of described tantalum sputter ring assemblies is 285 ± 0.5mm.
Optionally, the width of described tantalum sputter ring assemblies is 50.8 ± 0.25mm.
Optionally, the thickness of described tantalum sputter ring assemblies is 3.18 ± 0.25mm.
The arc radius of the arc angle of technique scheme by increasing tantalum sputter ring assemblies reduces the stress concentration in the arc angle zone of tantalum sputter ring assemblies, thereby solved that tantalum sputter ring assemblies in the prior art peeling phenomenon occurs easily in the arc angle zone and the problem that influences thin film deposition processes.Therefore, technique scheme can improve the qualification rate of the product of sputtering technology acquisition.
Description of drawings
Fig. 1 is a kind of front view of tantalum sputter ring assemblies;
Fig. 2 is the side-view of existing tantalum sputter ring assemblies;
Fig. 3 is the side-view of tantalum sputter ring assemblies of the present utility model;
Fig. 4 is the contrast synoptic diagram of the ring body of the utility model and existing tantalum sputter ring assemblies at the structure for amplifying of aperture position.
Embodiment
The contriver finds, in sputtering technology, because the ring body 11 of tantalum sputter ring assemblies shown in Figure 2 is less at the radius R 1 of the arc angle 12 of opening 10 positions, make the stress concentration in described arc angle 12 zones, promptly the subrange internal stress at arc angle 12 enlarges markedly, and will cause peeling off of described regional tantalum material when stress reaches local strength's limit.
In view of the foregoing, the utility model reduces the stress concentration in the arc angle zone of tantalum sputter ring assemblies with this, thereby prevents described regional generating material peeling phenomenon by the arc radius of the arc angle of increase tantalum sputter ring assemblies.
Fig. 3 is the side-view of the utility model tantalum sputter ring assemblies, and in conjunction with Fig. 1 and Fig. 3, the tantalum sputter ring assemblies of the utility model embodiment comprises the ring body 11 with opening 10, and described ring body 11 has arc angle 22 in opening 10 positions.The ring body 11 of existing tantalum sputter ring assemblies is 6.35mm at the arc radius R1 of the arc angle 12 of opening 10 positions, the ring body 11 of the utility model tantalum sputter ring assemblies at the arc radius R2 of the arc angle 22 of opening 10 positions greater than 6.35mm.Below in conjunction with accompanying drawing and preferred embodiment the utility model embodiment is described in detail.
As shown in figures 1 and 3, the tantalum sputter ring assemblies of present embodiment comprises: ring body 11 and the fixed part 13 that is arranged on the ring body 11.Described ring body 11 is made through technologies such as extrusion molding, thermal treatment and mechanical workouts by high purity tantalum or tantalum alloy.Described fixed part 13 is provided with threaded hole (not indicating among the figure), is used in sputtering technology described tantalum sputter ring assemblies being fixed in the sputter equipment.
The diameter D of described tantalum sputter ring assemblies is 285 ± 0.5mm.
The width W of described tantalum sputter ring assemblies is 50.8 ± 0.25mm.
The thickness T of described tantalum sputter ring assemblies is 3.18 ± 0.25mm.
Described ring body 11 is not totally enclosed annular, and it has opening 10, and the width W 1 of described opening 10 is 6.35 ± 0.25mm.Described ring body 11 comprises 4 arc angles 22 in opening 10 positions.
Please continue with reference to figure 4, it is the contrast synoptic diagram of the ring body of the utility model and existing tantalum sputter ring assemblies at the structure for amplifying of aperture position.Stress is defined as " additional internal force that is born on the unit surface ", as shown in Figure 4, because existing ring body 11 is too little at the arc radius R1 of the arc angle 12 of aperture position, make that the surface-area in arc angle 12 zones is less, cause tantalum sputter ring assemblies in use the stress in arc angle 12 zones enlarge markedly, thereby the tantalum material in arc angle 12 zones peels off easily.And ring body 11 of the present utility model at the arc radius R2 of the arc angle 22 of aperture position greater than the arc radius R1 of existing ring body 11 at the arc angle 12 of aperture position, make the surface-area in arc angle 22 zones greater than the surface-area in arc angle 12 zones, therefore relatively can reduce the stress concentration on arc angle surface.
In actual applications, the size of the arc radius R2 of arc angle 22 should be moderate, can not solve the problem that the arc angle surface stress is concentrated effectively if arc radius R2 is little, if arc radius R2 can increase the difficulty of processing of tantalum sputter ring assemblies too greatly again.In the present embodiment, the arc radius R2 of described arc angle 22 is 10～20mm.
Sputtering target material can be made by target blank being carried out technologies such as extrusion molding, thermal treatment, roughing and precision work usually.Wherein, the most surplus of blank is removed in roughing, cuts the general shape of target, to obtain the work in-process of rule; The surplus of blank small portion is removed in precision work, to obtain the qualified sputtering target section product of size.The arc angle of the tantalum sputter ring assemblies of above-mentioned ring structure can form in roughing and fine-processing technique, can increase the surface-area in arc angle zone by the radius that increases arc angle.
In sum, technique scheme has increased the arc radius of the arc angle of tantalum sputter ring assemblies, reduce the stress concentration in the arc angle zone of tantalum sputter ring assemblies with this, thereby solved that tantalum sputter ring assemblies in the prior art peeling phenomenon occurs easily in the arc angle zone and the problem that influences thin film deposition processes.Therefore, technique scheme can improve the qualification rate of the product of sputtering technology acquisition.
Though the utility model with preferred embodiment openly as above; but it is not to be used for limiting the utility model; any those skilled in the art are not in breaking away from spirit and scope of the present utility model; can make possible change and modification, therefore protection domain of the present utility model should be as the criterion with the scope that the utility model claim is defined.
Claims (6)
1. a tantalum sputter ring assemblies comprises the ring body with opening, and described ring body has arc angle at aperture position, it is characterized in that, the arc radius of described arc angle is greater than 6.35mm.
2. tantalum sputter ring assemblies according to claim 1 is characterized in that the arc radius of described arc angle is 10～20mm.
3. tantalum sputter ring assemblies according to claim 1 is characterized in that the width of described opening is 6.35 ± 0.25mm.
4. tantalum sputter ring assemblies according to claim 1 is characterized in that the diameter of described tantalum sputter ring assemblies is 285 ± 0.5mm.
5. tantalum sputter ring assemblies according to claim 1 is characterized in that the width of described tantalum sputter ring assemblies is 50.8 ± 0.25mm.
6. tantalum sputter ring assemblies according to claim 1 is characterized in that the thickness of described tantalum sputter ring assemblies is 3.18 ± 0.25mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202663583U CN201538814U (en) | 2009-11-12 | 2009-11-12 | Component of tantalum sputtering ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202663583U CN201538814U (en) | 2009-11-12 | 2009-11-12 | Component of tantalum sputtering ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201538814U true CN201538814U (en) | 2010-08-04 |
Family
ID=42590267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202663583U Expired - Lifetime CN201538814U (en) | 2009-11-12 | 2009-11-12 | Component of tantalum sputtering ring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201538814U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101920437A (en) * | 2010-08-20 | 2010-12-22 | 宁夏东方钽业股份有限公司 | Flat knurling process for sputtering inner and outer surfaces of tantalum ring |
| CN101920439A (en) * | 2010-08-20 | 2010-12-22 | 宁夏东方钽业股份有限公司 | Reeling, welding and knurling process for inner and outer surfaces of sputtered tantalum ring |
| CN101920438A (en) * | 2010-08-20 | 2010-12-22 | 宁夏东方钽业股份有限公司 | Coiling machine continuous knurling technique on inner and outer surfaces of sputtering tantalum ring |
| CN104726830A (en) * | 2013-12-24 | 2015-06-24 | 宁波江丰电子材料股份有限公司 | Correction equipment of focusing ring |
-
2009
- 2009-11-12 CN CN2009202663583U patent/CN201538814U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101920437A (en) * | 2010-08-20 | 2010-12-22 | 宁夏东方钽业股份有限公司 | Flat knurling process for sputtering inner and outer surfaces of tantalum ring |
| CN101920439A (en) * | 2010-08-20 | 2010-12-22 | 宁夏东方钽业股份有限公司 | Reeling, welding and knurling process for inner and outer surfaces of sputtered tantalum ring |
| CN101920438A (en) * | 2010-08-20 | 2010-12-22 | 宁夏东方钽业股份有限公司 | Coiling machine continuous knurling technique on inner and outer surfaces of sputtering tantalum ring |
| CN104726830A (en) * | 2013-12-24 | 2015-06-24 | 宁波江丰电子材料股份有限公司 | Correction equipment of focusing ring |
| CN104726830B (en) * | 2013-12-24 | 2017-06-30 | 宁波江丰电子材料股份有限公司 | The correcting device of focusing ring |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Component of tantalum sputtering ring Effective date of registration: 20121113 Granted publication date: 20100804 Pledgee: Export Import Bank of China Pledgor: Ningbo Jiangfeng Electronic Materials Co., Ltd. Registration number: 2012990000688 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20131206 Granted publication date: 20100804 Pledgee: Export Import Bank of China Pledgor: Ningbo Jiangfeng Electronic Materials Co., Ltd. Registration number: 2012990000688 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 315400, Zhejiang Yuyao Economic Development Zone, state science and Technology Industrial Park, Ann Road Patentee after: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Address before: 315400, Zhejiang Yuyao Economic Development Zone, state science and Technology Industrial Park, Ann Road Patentee before: Ningbo Jiangfeng Electronic Materials Co., Ltd. |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20131206 Granted publication date: 20100804 Pledgee: Export Import Bank of China Pledgor: Ningbo Jiangfeng Electronic Materials Co., Ltd. Registration number: 2012990000688 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100804 |
|
| CX01 | Expiry of patent term |