CN101913208A - Crystal block slicing method - Google Patents

Crystal block slicing method Download PDF

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Publication number
CN101913208A
CN101913208A CN 201010232673 CN201010232673A CN101913208A CN 101913208 A CN101913208 A CN 101913208A CN 201010232673 CN201010232673 CN 201010232673 CN 201010232673 A CN201010232673 A CN 201010232673A CN 101913208 A CN101913208 A CN 101913208A
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CN
China
Prior art keywords
crystal block
silico briquette
slice
steel wire
slicing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 201010232673
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Chinese (zh)
Inventor
贺洁
徐云波
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Changzhou Trina Solar Energy Co Ltd
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Changzhou Trina Solar Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Changzhou Trina Solar Energy Co Ltd filed Critical Changzhou Trina Solar Energy Co Ltd
Priority to CN 201010232673 priority Critical patent/CN101913208A/en
Publication of CN101913208A publication Critical patent/CN101913208A/en
Pending legal-status Critical Current

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  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to the technical fields of crystal block slicing and silicon slice preparation, in particular to a crystal block slicing method. The method comprises the following steps of: putting a silicon block to be sliced into a slicer, forming a certain included angle between the sliced surface of the silicon block to be sliced with a slicing wire mesh, and when the slicing wire mesh slices, forming point contact of steel wires in the slicing wire mesh with the side edge of the sliced surface of the silicon block. The method avoids the line contact of a single steel wire with the surface of the crystal block when the steel wires just contact the surface of the crystal block during slicing, the single steel wire forms the point contact with the surface of the crystal block, the contact area is small, the steel wires are easy to slice into the crystal block, and the slipping phenomenon when the line-contact steel wires slice the surface of the crystal block is completely avoided.

Description

A kind of crystal block slicing method
Technical field
The present invention relates to crystal block slicing and silicon chip preparing technical field, particularly a kind of crystal block slicing method.
Background technology
At present to monocrystalline, during the polycrystalline crystal block slicing, usually before crystal block enters the section of section board, earlier that crystal block is the parallel crystalline substance that is bonded at holds in the palm the surface, go into tangent plane perpendicular cuts direction sticking two or two above gib blocks at crystal block simultaneously, when steel wire rigidly connects and touches the crystal block surface when by gib block the guiding of steel wire and fixation being reduced section as far as possible, because arbitrary single steel wire is parallel with the crystal block surface, be the line contact, big and the steel wire that causes of contact area skids going into to cut the surface, yet this cutting technique can't thoroughly solve steel wire is all the time going into to cut the phenomenon of skidding in the surface, latent sliver in the slicing processes, the thickness sheet, the stria sheet, unfilled corner sheet and fragment ratio are high, cause the cutting into slices reduction of yield has had a strong impact on the section benefit.Consult relevant report, still do not have the effective ways that solve these problems that cause by this phenomenon in the industry both at home and abroad at present.
Summary of the invention
Technical problem to be solved by this invention is: steel wire is line with the crystal block surface and contacts, and contact area is big, and the steel wire that causes skids going into to cut the surface, causes in the slicing processes latent sliver, thickness sheet, stria sheet, unfilled corner sheet and fragment ratio high.
The technical solution adopted for the present invention to solve the technical problems is: a kind of crystal block slicing method, the silico briquette of slice is placed slicer, the silico briquette of slice go into tangent plane and section gauze α in a certain angle, when the section gauze went into to cut, the steel wire in the section gauze contacted with the side point that silico briquette is gone into tangent plane.
Make tangent plane and the steel wire concrete grammar in a certain angle of going into of the silico briquette of slice be: silico briquette sticks on the surface by glass plate to have on the aluminium sheet at certain angle of inclination, and aluminium sheet is fixed in the crystalline substance holder of slicer.
Perhaps, silico briquette sticks on the aluminium sheet by having certain slanted glass plate, and aluminium sheet is fixed in the crystalline substance holder of slicer.
Again or, by adjusting the section gauze, make section gauze and silico briquette be certain angle of inclination.
The angle α that goes into tangent plane and section gauze of silico briquette is between 0 degree~5 degree.
The invention has the beneficial effects as follows: cut into slices when the present invention makes crystal block slicing by serial of methods gauze and crystal block are gone into tangent plane and are formed suitable angle, steel wire rigidly connects and touches that crystal block arbitrary single steel wire of when surface and crystal block are surperficial to be contacted for line when avoiding cutting into slices, arbitrary single steel wire and crystal block surface are and contact, contact area is little, steel wire is very easy in the incision crystal block body, avoided the skidding of line contact steel wire when going into to cut the crystal block surface fully, reduced latent sliver in the slicing processes, the thickness sheet, the stria sheet, the phenomenon that unfilled corner sheet and fragment ratio are high, the TTV of the while silicon chip of cutting, stria has obvious reduction, the silicon chip quality is obviously improved, and this further provides assurance for silicon chip at the yield of battery-end.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is a principle schematic of the present invention;
Among the figure: 1. silico briquette, 2. steel wire, 3. contact point.
The specific embodiment
As shown in Figure 1, a kind of crystal block slicing method, the silico briquette 1 of slice is placed slicer, the silico briquette 1 of slice go into tangent plane and section gauze angle α in a certain angle, when the section gauze goes into to cut, steel wire 2 in the section gauze contacts with the side point that silico briquette 1 is gone into tangent plane, and what the stain among the figure showed is contact point 3.
This production method is specific as follows:
(1), to polycrystalline ingot carry out evolution, detect, block, technology such as chamfering, flour milling makes finished product polycrystalline crystal block; For single crystal ingot block, detection, flaw-piece amputation, block, technology such as chamfering, flour milling makes finished product monocrystalline crystal block;
(2), finished product crystal block and auxiliary material such as glass plate are placed on are covered with the flexible glue leather packing and are equipped with in the ultrasonic bath of suitable quantity of water and clean;
(3), the ready brilliant holder of particular design, aluminium sheet especially its mucilage glue surface are cleaned up and coat special glue, the glass plate that clean dry is special is pasted on aluminium sheet central authorities, guarantees that by pressurization glass and aluminium sheet adhesion are firm;
(4), will join and after glue evenly is applied to glass pane surface in right amount the finished product crystal block be sticked at the glass blocks surface, guarantee that crystal block is parallel with the glass plate edge face, while crystal block length can not surpass glass plate;
(5), through suitable hardening time, the crystalline substance holder that is stained with crystal block is installed on the board of cutting into slices cuts into slices.
(6), crystal block slicing finish after rod down, just can be packaged into finished product through operations such as cleaning, sorting, tests.
This novel monocrystalline, the slice process method essential technique innovation of polycrystalline crystal block is: steel wire and crystal block are gone into the angle α of tangent plane when adjusting crystal block slicing by serial of methods, angle α is preferably between 0 degree~5 degree, make in the slice process steel wire when going into to cut the crystal block surface, be the some contact, thereby solved in the existing slice process owing to steel wire is the latent sliver that the line contact makes steel wire skid and cause on the crystal block surface easily when going into to cut the crystal block surface at all, the thickness sheet, the stria sheet, unfilled corner sheet and the high problem of fragment ratio, the method that steel wire and crystal block are gone into the angle of tangent plane when adjusting crystal block slicing can be: when designing aluminium sheet, surface of aluminum plate has certain angle of inclination; When the glass plate of the sticking excellent usefulness of design, glass plate has certain angle of inclination; When arranging the section gauze, the gauze face has certain methods such as gradient.

Claims (5)

1. crystal block slicing method, it is characterized in that: the silico briquette (1) of slice is placed slicer, the silico briquette of slice (1) go into tangent plane and section gauze α in a certain angle, when the section gauze went into to cut, the steel wire (2) in the section gauze contacted with the side point that silico briquette (1) is gone into tangent plane.
2. crystal block slicing method according to claim 1, it is characterized in that: make tangent plane and the steel wire concrete grammar in a certain angle of going into of the silico briquette of slice be: described silico briquette sticks on the surface by glass plate to have on the aluminium sheet at certain angle of inclination, and aluminium sheet is fixed in the crystalline substance holder of slicer.
3. crystal block slicing method according to claim 1, it is characterized in that: make tangent plane and the steel wire concrete grammar in a certain angle of going into of the silico briquette of slice be: described silico briquette sticks on the aluminium sheet by having certain slanted glass plate, and aluminium sheet is fixed in the crystalline substance holder of slicer.
4. crystal block slicing method according to claim 1 is characterized in that: make tangent plane and the steel wire concrete grammar in a certain angle of going into of the silico briquette of slice be: by adjusting the section gauze, to make section gauze and silico briquette be certain angle of inclination.
5. crystal block slicing method according to claim 1 is characterized in that: the angle α that goes into tangent plane and section gauze of silico briquette is between 0 degree~5 degree.
CN 201010232673 2010-07-19 2010-07-19 Crystal block slicing method Pending CN101913208A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201010232673 CN101913208A (en) 2010-07-19 2010-07-19 Crystal block slicing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201010232673 CN101913208A (en) 2010-07-19 2010-07-19 Crystal block slicing method

Publications (1)

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CN101913208A true CN101913208A (en) 2010-12-15

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102021656A (en) * 2010-12-17 2011-04-20 上海超日(洛阳)太阳能有限公司 Silicon ingot sticking method
CN102198706A (en) * 2011-05-12 2011-09-28 无锡机床股份有限公司 Workpiece clamping mechanism of multi-wire cutting machine
CN102294757A (en) * 2011-08-08 2011-12-28 江西金葵能源科技有限公司 Method for splicing short mono-crystal rods cut by using diamond wire
CN102581970A (en) * 2012-03-06 2012-07-18 英利能源(中国)有限公司 Adjusting device for crystalline silicon block for solar battery component and cutting method
CN104175408A (en) * 2014-08-21 2014-12-03 天津英利新能源有限公司 Cutting method of silicon block
CN107538631A (en) * 2017-11-03 2018-01-05 江阴东升新能源股份有限公司 Small-sized side's silicon core hi-precision cutting technique
CN114434663A (en) * 2022-02-14 2022-05-06 安徽冠宇光电科技有限公司 Solar monocrystalline silicon slicer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004082282A (en) * 2002-08-27 2004-03-18 Kyocera Corp Method for slicing semiconductor block
CN101733849A (en) * 2010-02-10 2010-06-16 阿特斯(中国)投资有限公司 Method for cutting silicon rod

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004082282A (en) * 2002-08-27 2004-03-18 Kyocera Corp Method for slicing semiconductor block
CN101733849A (en) * 2010-02-10 2010-06-16 阿特斯(中国)投资有限公司 Method for cutting silicon rod

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102021656A (en) * 2010-12-17 2011-04-20 上海超日(洛阳)太阳能有限公司 Silicon ingot sticking method
CN102021656B (en) * 2010-12-17 2012-11-14 上海超日(洛阳)太阳能有限公司 Silicon ingot sticking method
CN102198706A (en) * 2011-05-12 2011-09-28 无锡机床股份有限公司 Workpiece clamping mechanism of multi-wire cutting machine
CN102294757A (en) * 2011-08-08 2011-12-28 江西金葵能源科技有限公司 Method for splicing short mono-crystal rods cut by using diamond wire
CN102581970A (en) * 2012-03-06 2012-07-18 英利能源(中国)有限公司 Adjusting device for crystalline silicon block for solar battery component and cutting method
CN102581970B (en) * 2012-03-06 2015-04-01 英利能源(中国)有限公司 Adjusting device for crystalline silicon block for solar battery component and cutting method
CN104175408A (en) * 2014-08-21 2014-12-03 天津英利新能源有限公司 Cutting method of silicon block
CN104175408B (en) * 2014-08-21 2016-06-08 天津英利新能源有限公司 A kind of cutting method of silico briquette
CN107538631A (en) * 2017-11-03 2018-01-05 江阴东升新能源股份有限公司 Small-sized side's silicon core hi-precision cutting technique
CN107538631B (en) * 2017-11-03 2019-11-19 江阴东升新能源股份有限公司 Small-sized side's silicon core hi-precision cutting technique
CN114434663A (en) * 2022-02-14 2022-05-06 安徽冠宇光电科技有限公司 Solar monocrystalline silicon slicer

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Application publication date: 20101215