CN101902885B - Method for forming printing pattern - Google Patents

Method for forming printing pattern Download PDF

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Publication number
CN101902885B
CN101902885B CN201010189796.1A CN201010189796A CN101902885B CN 101902885 B CN101902885 B CN 101902885B CN 201010189796 A CN201010189796 A CN 201010189796A CN 101902885 B CN101902885 B CN 101902885B
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CN
China
Prior art keywords
pattern
width
creme
fugitive
printing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010189796.1A
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Chinese (zh)
Other versions
CN101902885A (en
Inventor
金浩钟
金成日
朴圣模
田承勋
李宗旭
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Dongjin Semichem Co Ltd
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Dongjin Semichem Co Ltd
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Publication of CN101902885A publication Critical patent/CN101902885A/en
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41FPRINTING MACHINES OR PRESSES
    • B41F1/00Platen presses, i.e. presses in which printing is effected by at least one essentially-flat pressure-applying member co-operating with a flat type-bed
    • B41F1/16Platen presses, i.e. presses in which printing is effected by at least one essentially-flat pressure-applying member co-operating with a flat type-bed for offset printing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41CPROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00Forme preparation
    • B41C1/02Engraving; Heads therefor
    • B41C1/025Engraving; Heads therefor characterised by means for the liquid etching of substrates for the manufacturing of relief or intaglio printing forms, already provided with resist pattern
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Printing Methods (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

The present invention relates to a method for forming a print pattern. The printing pattern forming method includes the steps of: applying the paste in a specific pattern on a substrate; hardening the applied paste to form a temporary pattern; stripping off the surface of the temporary pattern to reduce the width of the temporary pattern; and firing the temporary pattern, thereby forming a printed pattern.

Description

Forming method of printing pattern
Technical field
The present invention relates to a kind of forming method of printing pattern, particularly a kind of forming method of printing pattern that can form the printed patterns with trickle width.
Background technology
At present, for forming the sept etc. of the electrode of display unit, net (mesh) the shape shield member of anti electromagnetic wave filter and the liquid crystal indicator of the electrode of plasma display etc., generally use hectographic printing (off-set) method.
Offset printing method does not directly print stock, and after creme being put into the groove of anilox roll (GRAVUREROLL), utilizes the rubber rubber roll of intermediary to extract creme from anilox roll, then is transferred on stock by described creme.With regard to described offset printing method, because the groove of anilox roll has certain limitation in processing, and due to the viscous-elastic behaviour etc. of creme, during printing fine pattern, there is certain difficulty.
Summary of the invention
The invention provides a kind of not only can the cheaper offset printing method of operation expense, but also can than the formation method of printed patterns being easier to be formed the printed patterns with trickle width.
The forming method of printing pattern that one embodiment of the invention relate to comprises the following steps: on the substrate with specific pattern coating creme; Harden the creme applied, thus form fugitive pattern; Peel off the surface of described fugitive pattern, reduce the width of described fugitive pattern with this; And fugitive pattern forms printed patterns described in roasting.
In the step of described coating creme, described creme can be applied by hectographic printing.Described creme can comprise conductive material and glass dust.
In the step of described formation fugitive pattern, described creme can be hardened by a method in exposure, drying and thermmohardening method.Further, described fugitive pattern can be formed as convex shape towards the direction away from described stock.
Reduce in the step of the width of fugitive pattern described, the surface of described fugitive pattern can be peeled off by carrying out chemical reaction with developer solution.The width of the described fugitive pattern detected before supposing to reduce the step of fugitive pattern width described in carrying out is 1, then the ratio of described printed patterns width to described fugitive pattern width can be 0.05 to 0.95.
Described printed patterns can as the sept of the mesh shields parts of the electrode of display unit, anti electromagnetic wave filter, liquid crystal indicator and radio-frequency (RF) identification (RFID; Radio Frequency IDentification) in label one uses.
Compared with the pattern formation method that the complex process of photo-offset process etc., the cost of technology are higher, technique of the present invention is relatively simple, while can reducing the cost of technology, easily can form the trickle printed patterns that width is several μm to 20 μm.
Accompanying drawing explanation
Fig. 1 is the process chart of the forming method of printing pattern that one embodiment of the invention relates to;
Fig. 2 is the schematic cross-section of the creme in the 1st step shown in Fig. 1;
Fig. 3 is the schematic cross-section of the fugitive pattern of the 2nd step shown in Fig. 1;
Fig. 4 is the schematic cross-section of the fugitive pattern of the 3rd step shown in Fig. 1;
Fig. 5 is the schematic cross-section of the printed patterns of the 4th step shown in Fig. 1.
Embodiment
Below, with reference to accompanying drawing, embodiments of the invention are described, can easily implement to make person of ordinary skill in the field.Can easy understand the present invention as person of ordinary skill in the field, following examples are only for exemplifying explanation the present invention, and do not departing within concept of the present invention and right, the present invention can have various deformation.
The all terms comprising technical terms and the scientific words used below have the implication identical with the implication that person of ordinary skill in the field understands usually.The term defined in dictionary adds the implication having and conform to content disclosed herein with relate art literature, when not special definition, then can not be interpreted as more satisfactory or very formal implication.
Fig. 1 is the process chart of the forming method of printing pattern that one embodiment of the invention relates to.
With reference to Fig. 1, forming method of printing pattern comprises: on the substrate with the 1st step (S100) of specific pattern coating creme; Harden the creme applied, thus form the 2nd step (S200) of fugitive pattern; Peel off the surface of described fugitive pattern, reduce the 3rd step (S300) of described fugitive pattern width with this; And fugitive pattern described in roasting is to form the 4th step (S400) of printed patterns.
Fig. 2 is the schematic cross-section of the creme in the 1st step (S100) shown in Fig. 1.
With reference to Fig. 2, offset printing appts can be utilized for applying in described creme the 12,1st step (S100).
Offset printing appts (not shown) can comprise: distributor, for the creme that spues; Anilox roll, its outer surface is formed with the groove for holding creme; Rubber rubber roll, after anilox roll takes out creme, is coated on stock.
Stock 14 applies creme 12 with the shape identical with the pattern of the groove that anilox roll is formed.Creme 12 easily can apply into striped (stripe) shape, net (mesh) shape or other various shapes.And creme 12, according to the application of printed patterns, can also comprise conductive material.That is, when printed patterns uses as the electrode of display unit or the shield member of anti electromagnetic wave filter, creme 12 can comprise conductive material.
Such as, when printed patterns uses as the shield member of anti electromagnetic wave filter, creme 12 can comprise conductive metal, solvent, bonding agent and elasticity organic substance etc.Conductive metal can be silver, copper, nickel or their alloy.Solvent can use and be selected from the mixture that boiling point is a kind of or higher boiling point materials and low boiling point material in the higher boiling point materials of more than 200 DEG C and the low boiling point material of boiling point below 200 DEG C.Bonding agent can use glass dust (glass frit).Organic substance can use acrylic resin, acrylate, polyester, polyurethanes or oligomer etc.In follow-up calcining process, the while that organic substance being removed, glass dust is sintered.
In the 1st step (S100), on stock 14, the creme 12 of coating has the 1st width w1.1st width w1 can be less than the width of the groove that anilox roll is formed.Such as, when the width of anilox roll be 30 μm, the degree of depth be 20 μm time, the width being coated in the creme 12 on stock 14 is less than 30 μm, and minimum can be 20 μm.
Fig. 3 is the schematic cross-section of the fugitive pattern of the 2nd step (S200) shown in Fig. 1.With reference to Fig. 3, in order to the creme 12 that hardens, the 2nd step (S200) can use any one method in drying, exposure and thermmohardening.
With regard to drying means, at room temperature natural drying the creme 12 or drying device such as heating drier or ultraviolet drier can be used.When using drying device, the temperature of drying machine can be 30 DEG C to 150 DEG C.If baking temperature is higher, drying time is longer, anxious extraction flow is larger, then can harden creme 12 more effectively.
For exposure method, the conditions of exposure of various ways can be set according to the component of creme 12.Such as, the light quantity of exposure lamp can be 10mJ to 100mJ, if light quantity is larger, the time for exposure is longer, exposure frequency is more, then can harden creme 12 more effectively.
For thermmohardening method, the thermmohardening condition of various ways can be set according to the component of creme 12.Such as, the temperature of thermmohardening device can be that room temperature (general 25 DEG C) is to 60 DEG C.If hardening temperature is higher, time of carrying out longer, anxious extraction flow is larger, then can harden creme 12 more effectively.
Creme 12 can comprise UV cured organic substance.Now, by the creme 12 that hardens to creme 12 irradiation ultraviolet radiation applied.On the other hand, creme 12 can comprise thermmohardening organic substance.Now, heat is applied to the creme 12 applied, with this, creme 12 is hardened.
In the 2nd step (S200), harden creme 12 completely, thus form fugitive pattern 16.Fugitive pattern 16 keeps the shape substantially similar to the creme 12 of the 1st step (S100).Fugitive pattern 16 is formed as protruding shape towards the direction away from stock 14.Fugitive pattern 16 has the 2nd width w2.2nd width w2 can be identical with the 1st width w1 (with reference to Fig. 2) or be slightly less than the 1st width w1.
Owing to forming pattern 16 by the creme 12 that hardens completely in the 2nd step (S200), minimize so the distortion of fugitive pattern 16 can be made to reach in the 3rd follow-up step (S300).Suppose non-sclerous or partially hardened creme, then generating portion fugitive pattern can be removed or the phenomenon such as the width of fugitive pattern is uneven in the 3rd follow-up step, thus the fugitive pattern of bad quality can be produced.
Fig. 4 is the schematic cross-section of the fugitive pattern of the 3rd step (S300) shown in Fig. 1.With reference to Fig. 4, for peelling off the surface of fugitive pattern 16, the 3rd step (S300) can use developer solution.
Developer solution is the solution carrying out selecting etching to fugitive pattern 16, and it is ejected on stock 14 equably by nozzle (not shown).Because developer solution and fugitive pattern 16 carry out chemical reaction, so the surface touching the fugitive pattern 16 of developer solution is peeled off by carrying out chemical reaction with developer solution.Therefore, the width of the fugitive pattern 161 after development is less than the width before development.
Fugitive pattern 161 through the 3rd step (S300) has the 3rd width w3, and the value of the 3rd width w3 is less than the 2nd width w2 (with reference to Fig. 3).By controlling the component of developer solution, the painting method of developer solution and developer solution coating time etc., the 3rd width w3 can easily be controlled.Developer solution can comprise NaOH, and can be suitable for the spray regime utilizing nozzle.Expulsion pressure can be 2Kgf to 5Kgf, and the pendulum angle of nozzle can be less than or equal to 60 °.In the 3rd step (S300), the developer solution of use is owing to removing by cleaning process, so can not remain on stock 14.
Fig. 5 is the schematic cross-section of the printed patterns of the 4th step (S400) shown in Fig. 1.With reference to Fig. 5, printed patterns 18 is completed by roasting in the 4th step (S400).
Sintering temperature can be about 350 DEG C to 600 DEG C.In roasting process, the organic substance comprised in creme is removed, and glass dust is sintered, thus the adhesiveness of stock 14 is strengthened.In order to applicable roasting technique, stock 14 preferably glass substrate.
Printed patterns 18 through the 4th step (S400) has the 4th width w4, and the value of described 4th width w4 is less than the 3rd width w3 (with reference to Fig. 4) of the fugitive pattern 161 after development.Compared by the 2nd width w2 (with reference to Fig. 3) of the fugitive pattern 16 before development and the 4th width w4 of printed patterns 18 that finally completes, suppose that the 2nd width w2 is 1, then the ratio of the 4th width w4 to the 2nd width w2 can be 0.05 to 0.95.That is, the 4th width w4 of printed patterns 18 is minimum can narrow down to 95% of the 2nd width w2, the highlyest can narrow down to 5% of the 2nd width w2.
Although the ratio of the 4th width w4 to the 2nd width w2 can reach 0.05, the function of the printed patterns 18 now formed can decline.Such as, when printed patterns 18 uses as the electrode of display unit, the resistance of electrode can increase; When shield member as anti electromagnetic wave filter uses, the anti electromagnetic wave performance of shield member can decline.Further, although the ratio of the 4th width w4 to the 2nd width w2 can be greater than 0.95, the reduced width degree of the printed patterns 18 now formed is very little, so the effect of printed patterns granular is perfect not.
In addition, by changing the condition of aforementioned hardening process and developing procedure, the reduced width ratio of printed patterns 18 easily can be controlled.Such as, in the 1st step (S100), when applying creme 12 into about 20 μm of width, 1 μm can be narrowed down to by the highest for the width w4 of the printed patterns 18 of the 4th step (S400).
Due to the hectographic printing operation that utilizes the cost of technology cheaper in the present embodiment and developing procedure, so can easily be formed, there is the printed patterns 18 that width is several μm to 100 μm.In other words, compared with the pattern formation method that the complex process of photo offset printing technology etc., the cost of technology are higher, the present embodiment makes technical process become simply, and can reduce the cost of technology.Table 1 below shows the change width of fugitive pattern and the printed patterns formed according to different technology conditions.
Table 1
Process conditions Creme Conditions of exposure Drying condition Development conditions The width (μm) of fugitive pattern The width (μm) of printed patterns
A Photosensitive silver creme 1,000mJ 80 DEG C 10 points Expulsion pressure 3Kgf, jet velocity 3,000rpm 80 62
B Photosensitive silver creme 1,000mJ 80 DEG C/10 points Expulsion pressure 5Kgf, jet velocity 2,500rpm 80 55
C Photosensitive silver creme 1,000mJ 80 DEG C/10 points Expulsion pressure 3Kgf, jet velocity 3,000rpm 20 15
D Photosensitive silver creme 1,000mJ 80 DEG C/10 points Expulsion pressure 5Kgf, jet velocity 2,500rpm 20 10
Can know from the result of described table 1, for the same creme through identical exposure and dry run, the width by regulating expulsion pressure and jet velocity can form the printed patterns of various sizes in developing procedure.
The printed patterns 18 formed by preceding method can be applied to various field.Such as, the electrode of the display unit such as plasma display, adheres to the shield member of the anti electromagnetic wave filter in display unit, the sept of liquid crystal indicator and radio-frequency (RF) identification (RFID; Radio Frequency IDentification) field such as label.
Be illustrated embodiments of the invention above, but those skilled in the art can easy understand, within the concept not departing from claim and scope, the present invention can have various deformation and amendment.

Claims (6)

1. a forming method of printing pattern, is characterized in that, comprises the following steps:
On the substrate by hectographic printing with shape of stripes and netted in arbitrary pattern coating creme;
Hardened the creme applied by hectographic printing, thus form fugitive pattern;
Developer solution is utilized to peel off the surface of described fugitive pattern, reduce the width of described fugitive pattern with this, described developer solution comprises NaOH, and the coating method of developer solution is the spray regime utilizing nozzle, expulsion pressure is 2Kgf to 5Kgf, and the pendulum angle of nozzle is less than or equal to 60 °; And
Described in roasting, fugitive pattern forms printed patterns,
Suppose that the width of the described fugitive pattern detected before reducing the step of facing pattern width is 1, the ratio of described printed patterns width to described fugitive pattern width is 0.05 to 0.95, according to described cure step and the described process conditions utilizing the development step of developer solution, control the reduced width ratio of described printed patterns.
2. forming method of printing pattern according to claim 1, is characterized in that:
Described creme comprises conductive material and glass dust.
3. forming method of printing pattern according to claim 1, is characterized in that:
In the step forming fugitive pattern, described creme is hardened by a method in exposure, drying and thermmohardening method.
4. forming method of printing pattern according to claim 3, is characterized in that:
Described fugitive pattern is formed as convex shape towards the direction away from described stock.
5. forming method of printing pattern according to claim 1, is characterized in that:
In the step reducing fugitive pattern width, described developer solution is sprayed equably by nozzle.
6., according to the forming method of printing pattern in claim 1 to 5 described in any one, it is characterized in that:
Described printed patterns uses as in the electrode of display unit, the mesh shields parts of anti electromagnetic wave filter, the sept of liquid crystal indicator and RFID tag.
CN201010189796.1A 2009-05-29 2010-05-26 Method for forming printing pattern Expired - Fee Related CN101902885B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0047563 2009-05-29
KR1020090047563A KR20100128897A (en) 2009-05-29 2009-05-29 Forming method of print pattern

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CN101902885B true CN101902885B (en) 2015-06-03

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1899850A (en) * 2004-07-16 2007-01-24 上海泰梦印刷科技有限公司 Printing method
CN101071709A (en) * 2006-04-28 2007-11-14 Lg电子有限公司 Filter for display apparatus, method of manufacturing the same and plasma display apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8530589B2 (en) * 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials
JP2010541255A (en) * 2007-10-01 2010-12-24 コヴィオ インコーポレイテッド Outline designed thin film device and structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1899850A (en) * 2004-07-16 2007-01-24 上海泰梦印刷科技有限公司 Printing method
CN101071709A (en) * 2006-04-28 2007-11-14 Lg电子有限公司 Filter for display apparatus, method of manufacturing the same and plasma display apparatus

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CN101902885A (en) 2010-12-01

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