CN101902885A - Forming method of printing pattern - Google Patents

Forming method of printing pattern Download PDF

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Publication number
CN101902885A
CN101902885A CN2010101897961A CN201010189796A CN101902885A CN 101902885 A CN101902885 A CN 101902885A CN 2010101897961 A CN2010101897961 A CN 2010101897961A CN 201010189796 A CN201010189796 A CN 201010189796A CN 101902885 A CN101902885 A CN 101902885A
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CN
China
Prior art keywords
printed patterns
creme
width
interim pattern
formation method
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Granted
Application number
CN2010101897961A
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Chinese (zh)
Other versions
CN101902885B (en
Inventor
金浩钟
金成日
朴圣模
田承勋
李宗旭
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Dongjin Semichem Co Ltd
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Dongjin Display Material Co Ltd
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Publication of CN101902885A publication Critical patent/CN101902885A/en
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Publication of CN101902885B publication Critical patent/CN101902885B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41F—PRINTING MACHINES OR PRESSES
    • B41F1/00—Platen presses, i.e. presses in which printing is effected by at least one essentially-flat pressure-applying member co-operating with a flat type-bed
    • B41F1/16—Platen presses, i.e. presses in which printing is effected by at least one essentially-flat pressure-applying member co-operating with a flat type-bed for offset printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
    • B41C1/00—Forme preparation
    • B41C1/02—Engraving; Heads therefor
    • B41C1/025—Engraving; Heads therefor characterised by means for the liquid etching of substrates for the manufacturing of relief or intaglio printing forms, already provided with resist pattern
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Printing Methods (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

The present invention relates to a forming method of printing pattern. The method includes the following steps: coating paste on a substrate by a specific pattern; vulcanizing the coated paste to form a temporary pattern; stripping the surface of the temporary pattern to shorten the width of the temporary pattern; and baking the temporary pattern to form the printing pattern.

Description

Printed patterns formation method
Technical field
The present invention relates to a kind of printed patterns formation method, particularly a kind of printed patterns formation method that can form printed patterns with trickle width.
Background technology
At present, electrode, net (mesh) the shape shield member of anti electromagnetic wave filter and the sept of liquid crystal indicator etc. for the display unit of the electrode that forms plasma display etc. generally use hectographic printing (off-set) method.
Offset printing method does not directly print stock, and creme is put into after the groove of anilox roll (GRAVUREROLL), utilizes the rubber rubber roll of intermediary's medium to extract creme from anilox roll, more described creme is transferred on the stock.With regard to described offset printing method, because the groove of anilox roll has certain limitation in processing, and because the viscous-elastic behaviour of creme etc. have certain difficulty during the printing fine pattern.
Summary of the invention
The invention provides a kind of cheaper offset printing method of the cost of technology that not only can use, but also can be than the formation method of the printed patterns that is easier to form the printed patterns with trickle width.
The printed patterns formation method that one embodiment of the invention relate to may further comprise the steps: apply creme with specific pattern on stock; The creme that sclerosis has applied, thus interim pattern formed; Peel off the surface of described interim pattern, dwindle the width of described interim pattern with this; And the described interim pattern of roasting forms printed patterns.
In the step of described coating creme, described creme can apply by hectographic printing.Described creme can comprise conductive material and glass dust.
In the step of the interim pattern of described formation, described creme can harden by a method in exposure, drying and the thermmohardening method.And described interim pattern can form convex shape towards the direction away from described stock.
In the step of the described width that dwindles interim pattern, the surface of described interim pattern can be by carrying out chemical reaction with developer solution and being peeled off.Suppose to carry out that the width of detected described interim pattern is 1 before the described step of dwindling interim pattern width, then described printed patterns width can be 0.05 to 0.95 to the ratio of described interim pattern width.
Described printed patterns can be used as the electrode of display unit, the mesh shields parts of anti electromagnetic wave filter, the sept and the radio-frequency (RF) identification (RFID of liquid crystal indicator; Radio Frequency IDentification) in the label uses.
Compare with the pattern formation method that complex process, the cost of technology of photo-offset process etc. are higher, technology of the present invention is simple relatively, and when can reduce the cost of technology, can form width easily is the trickle printed patterns of a few μ m to 20 μ m.
Description of drawings
Fig. 1 is the process chart of the printed patterns formation method that relates to of one embodiment of the invention;
Fig. 2 is the schematic cross-section of the creme in the 1st step shown in Fig. 1;
Fig. 3 is the schematic cross-section of the interim pattern of the 2nd step shown in Fig. 1;
Fig. 4 is the schematic cross-section of the interim pattern of the 3rd step shown in Fig. 1;
Fig. 5 is the schematic cross-section of the printed patterns of the 4th step shown in Fig. 1.
Embodiment
Below, with reference to the description of drawings embodiments of the invention, so that the person of ordinary skill in the field can implement easily.Can understand the present invention easily as the person of ordinary skill in the field, following examples only are used to exemplify explanation the present invention, are not breaking away within notion of the present invention and the claim scope, and the present invention can have various deformation.
Comprise the technical terms that uses below and have the implication identical at all interior terms with the implication of person of ordinary skill in the field's common sense with scientific words.Defined term is additional in the dictionary has and correlation technique document and the implication that conforms in this disclosed content, under the situation that does not have special definition, then can not be interpreted as more satisfactory or very formal implication.
Fig. 1 is the process chart of the printed patterns formation method that relates to of one embodiment of the invention.
With reference to Fig. 1, printed patterns formation method comprises: the 1st step (S100) that applies creme on stock with specific pattern; The creme that applied of sclerosis, thus the 2nd step (S200) of interim pattern formed; Peel off the surface of described interim pattern, dwindle the 3rd step (S300) of described interim pattern width with this; And the described interim pattern of roasting is to form the 4th step (S400) of printed patterns.
Fig. 2 is the schematic cross-section of the creme in the 1st step (S100) shown in Figure 1.
With reference to Fig. 2, can utilize offset printing appts for applying in described creme 12, the 1 steps (S100).
Offset printing appts (not shown) can comprise: distributor is used to the creme that spues; Anilox roll, its outer surface is formed with the groove that is used to hold creme; The rubber rubber roll after anilox roll is taken out creme, is coated on it on stock.
Applying creme 12 with the shape identical on the stock 14 with the pattern of the groove that forms on the anilox roll.Creme 12 can apply into striped (stripe) shape, net (mesh) shape or other different shape easily.And creme 12 can also comprise conductive material according to the application of printed patterns.That is, when printed patterns used as the shield member of the electrode of display unit or anti electromagnetic wave filter, creme 12 can comprise conductive material.
For example, when printed patterns used as the shield member of anti electromagnetic wave filter, creme 12 can comprise conductive metal, solvent, bond and elasticity organic substance etc.Conductive metal can be silver, copper, nickel or their alloy.Solvent can use and be selected from boiling point is higher boiling point material and a kind of or higher boiling point material and the low boiling mixtures of material of boiling point in the low boiling material below 200 ℃ more than 200 ℃.Bond can use glass dust (glass frit).Organic substance can use acrylic resin, acrylate, polyester, polyurethanes or oligomer etc.In follow-up calcining process, the removed while of organic substance, glass dust is sintered.
The creme 12 that applies on the stock 14 in the 1st step (S100) has the 1st width w1.The 1st width w1 can be less than the width of the groove that forms on the anilox roll.For example, when the width of anilox roll be 30 μ m, when the degree of depth is 20 μ m, the width that is coated in the creme 12 on the stock 14 is littler than 30 μ m, minimum can be 20 μ m.
Fig. 3 is the schematic cross-section of the interim pattern of the 2nd step (S200) shown in Fig. 1.With reference to Fig. 3, for creme 12, the 2 steps (S200) of hardening can be used any method in drying, exposure and the thermmohardening.
With regard to drying means, air dry creme 12 or can use drying devices such as heated drying machine or ultraviolet drier at room temperature.When using drying device, the temperature of drying machine can be 30 ℃ to 150 ℃.If baking temperature is high more, drying time long more, anxious extraction flow big more, creme 12 more effectively then can harden.
At exposure method, the conditions of exposure of various ways can be set according to the component of creme 12.For example, exposure can be 10mJ to 100mJ with the light quantity of lamp, if light quantity is big more, the time for exposure is long more, exposure frequency is many more, creme 12 more effectively then can harden.
At the thermmohardening method, the thermmohardening condition of various ways can be set according to the component of creme 12.For example, the temperature of thermmohardening device can be that room temperature (general 25 ℃) is to 60 ℃.If hardening temperature is high more, long more, anxious extraction flow of the time of carrying out is big more, creme 12 more effectively then can harden.
Creme 12 can comprise UV cured organic substance.At this moment, by creme 12 that creme 12 irradiation ultraviolet radiations that applied are hardened.On the other hand, creme 12 can comprise the thermmohardening organic substance.At this moment, the creme 12 that has applied is applied heat, come creme 12 is hardened with this.
In the 2nd step (S200), the creme 12 that hardens fully, thus form interim pattern 16.The creme 12 of interim pattern 16 maintenances and the 1st step (S100) is similar shapes basically.Interim pattern 16 forms the shape of projection towards the direction away from stock 14.Interim pattern 16 has the 2nd width w2.The 2nd width w2 can be identical with the 1st width w1 (with reference to Fig. 2) or be slightly less than the 1st width w1.
Owing to form pattern 16 by the creme 12 that hardens fully in the 2nd step (S200), minimize so the distortion of interim pattern 16 is reached.Suppose non-sclerous or the partially hardened creme, phenomenon such as can take place in the 3rd follow-up step then that the interim pattern of part is removed or the width of interim pattern is inhomogeneous, thus can produce the interim pattern of bad quality.
Fig. 4 is the schematic cross-section of the interim pattern of the 3rd step (S300) shown in Fig. 1.With reference to Fig. 4, for peelling off the surface of interim pattern 16, the 3rd step (S300) can be used developer solution.
Developer solution is that interim pattern 16 is selected etched solution, and it is ejected on the stock 14 equably by nozzle (not shown).Because developer solution carries out chemical reaction with interim pattern 16, so the surface of interim pattern 16 that touches developer solution is by carrying out chemical reaction with developer solution and being peeled off.Therefore, the width of the interim pattern 161 after the development is littler than the width before developing.
Interim pattern 161 through the 3rd step (S300) has the 3rd width w3, and the value of the 3rd width w3 is less than the 2nd width w2 (with reference to Fig. 3).The painting method of component, developer solution by the control developer solution and developer solution coating time etc., the 3rd width w3 can be controlled easily.Developer solution can comprise NaOH, and can be suitable for the spray regime of utilizing nozzle.Expulsion pressure can be 2Kgf to 5Kgf, and the pendulum angle of nozzle can be less than or equal to 60 °.The developer solution that uses in the 3rd step (S300) is owing to removing by cleaning process, so can not remain on the stock 14.
Fig. 5 is the schematic cross-section of the printed patterns of the 4th step (S400) shown in Fig. 1.With reference to Fig. 5, printed patterns 18 is finished by roasting in the 4th step (S400).
Sintering temperature can be about 350 ℃ to 600 ℃.In roasting process, the organic substance that is comprised in the creme is removed, and glass dust is sintered, thereby the adhesiveness of stock 14 is strengthened.In order to be suitable for roasting technique, stock 14 is glass substrate preferably.
Printed patterns 18 through the 4th step (S400) has the 4th width w4, and the value of described the 4th width w4 is littler than the 3rd width w3 (with reference to Fig. 4) of the interim pattern 161 after developing.The 4th width w4 of the 2nd width w2 (with reference to Fig. 3) of the interim pattern 16 before developing and the printed patterns 18 finished is at last compared, suppose that the 2nd width w2 is 1, then the 4th width w4 can be 0.05 to 0.95 to the ratio of the 2nd width w2.That is to say that the 4th width w4 of printed patterns 18 is minimum can to narrow down to 95% of the 2nd width w2, the highlyest can narrow down to 5% of the 2nd width w2.
Though the 4th width w4 can reach 0.05 to the ratio of the 2nd width w2, the function of the printed patterns 18 that form this moment can descend.For example, when printed patterns 18 used as the electrode of display unit, the resistance of electrode can increase; When using as the shield member of anti electromagnetic wave filter, the anti electromagnetic wave performance of shield member can descend.And though the 4th width w4 can be greater than 0.95 to the ratio of the 2nd width w2, the reduced width degree of the printed patterns 18 that form this moment is very little, so the effect of printed patterns granular is perfect inadequately.
In addition, by changing the condition of aforementioned hardening process and developing procedure, can control the reduced width ratio of printed patterns 18 easily.For example, in the 1st step (S100), when applying creme 12 into about 20 μ m width, can narrow down to 1 μ m with the width w4 of the printed patterns 18 of the 4th step (S400) is the highest.
Owing to utilize the cost of technology cheaper hectographic printing operation and developing procedure in the present embodiment, have the printed patterns 18 that width is a few μ m to 100 μ m so can form easily.In other words, compare with the pattern formation method that complex process, the cost of technology of photo offset printing technology etc. are higher, present embodiment becomes simply technical process, and can reduce the cost of technology.Following table 1 shows according to the interim pattern of different technology conditions formation and the change width of printed patterns.
Table 1
Process conditions Creme Conditions of exposure Drying condition Development conditions The width (μ m) of interim pattern The width of printed patterns (μ m)
A The photosensitive silver creme 1,000mJ 80 ℃ 10 minutes Expulsion pressure 3Kgf, jet velocity 3,000rpm 80 62
B The photosensitive silver creme 1,000mJ 80 ℃/10 minutes Expulsion pressure 5Kgf, jet velocity 2,500rpm 80 55
C The photosensitive silver creme 1,000mJ 80 ℃/10 minutes Expulsion pressure 3Kgf, jet velocity 3,000rpm 20 15
D The photosensitive silver creme 1,000mJ 80 ℃/10 minutes Expulsion pressure 5Kgf, jet velocity 2,500rpm 20 10
Can know from the result of described table 1,, in developing procedure, can form the width of the printed patterns of various sizes by adjusting expulsion pressure and jet velocity at through identical exposure and same a kind of creme of dry run.
Can be applied to various fields by the formed printed patterns 18 of preceding method.For example, the electrode of display unit such as plasma display adheres to the shield member of the anti electromagnetic wave filter on the display unit, the sept of liquid crystal indicator and radio-frequency (RF) identification (RFID; Radio Frequency IDentification) field such as label.
More than embodiments of the invention are illustrated, but the technical staff of the technical field of the invention can understand easily, within notion that does not break away from claim and scope, the present invention can have various deformation and modification.

Claims (8)

1. a printed patterns formation method is characterized in that, may further comprise the steps:
On stock, apply creme with specific pattern;
The creme that sclerosis has applied, thus interim pattern formed;
Peel off the surface of described interim pattern, dwindle the width of described interim pattern with this; And the described interim pattern of roasting forms printed patterns.
2. printed patterns formation method according to claim 1 is characterized in that:
In the step that applies creme, described creme applies by hectographic printing.
3. printed patterns formation method according to claim 2 is characterized in that:
Described creme comprises conductive material and glass dust.
4. printed patterns formation method according to claim 1 is characterized in that:
In the step that forms interim pattern, described creme hardens by a method in exposure, drying and the thermmohardening method.
5. printed patterns formation method according to claim 4 is characterized in that:
Described interim pattern forms convex shape towards the direction away from described stock.
6. printed patterns formation method according to claim 1 is characterized in that:
In dwindling the step of interim pattern width, the surface of described interim pattern is by carrying out chemical reaction with developer solution and being peeled off.
7. printed patterns formation method according to claim 6 is characterized in that:
The width of supposing detected described interim pattern before dwindling the step of interim pattern width is 1, and described printed patterns width is 0.05 to 0.95 to the ratio of described interim pattern width.
8. according to any one described printed patterns formation method in the claim 1 to 7, it is characterized in that:
Described printed patterns uses as one in the sept of the mesh shields parts of the electrode of display unit, anti electromagnetic wave filter, liquid crystal indicator and the RFID tag.
CN201010189796.1A 2009-05-29 2010-05-26 Method for forming printing pattern Expired - Fee Related CN101902885B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0047563 2009-05-29
KR1020090047563A KR20100128897A (en) 2009-05-29 2009-05-29 Forming method of print pattern

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CN101902885A true CN101902885A (en) 2010-12-01
CN101902885B CN101902885B (en) 2015-06-03

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1899850A (en) * 2004-07-16 2007-01-24 上海泰梦印刷科技有限公司 Printing method
CN101071709A (en) * 2006-04-28 2007-11-14 Lg电子有限公司 Filter for display apparatus, method of manufacturing the same and plasma display apparatus
WO2008137811A2 (en) * 2007-05-04 2008-11-13 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials
WO2009046148A1 (en) * 2007-10-01 2009-04-09 Kovio, Inc. Profile engineered thin film devices and structures

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1899850A (en) * 2004-07-16 2007-01-24 上海泰梦印刷科技有限公司 Printing method
CN101071709A (en) * 2006-04-28 2007-11-14 Lg电子有限公司 Filter for display apparatus, method of manufacturing the same and plasma display apparatus
WO2008137811A2 (en) * 2007-05-04 2008-11-13 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials
WO2009046148A1 (en) * 2007-10-01 2009-04-09 Kovio, Inc. Profile engineered thin film devices and structures

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KR20100128897A (en) 2010-12-08
CN101902885B (en) 2015-06-03

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