Summary of the invention
The present invention is in order to overcome the existing large defective of RF front-end module area occupied, the portable terminal that the configurable multimode radio-frequency front end module is provided and has had this module.
According to an aspect of the present invention, a kind of configurable multimode radio-frequency front end module is provided, comprise single pole multiple throw 109, controller 104,204, also comprise low-frequency range radio-frequency power amplifier tube core 101,201, high band radio-frequency power amplifier tube core 102,202, a plurality of output matching networks that some selector switch SW1, SW2, SW3 and a plurality of capacitor C 1, C2, C3, C4, C5 and inductance L 1, L2, L3, L4, L5 form; The frequency range of low-frequency range is 824MHz → 915MHz, and the frequency range of high band is 1710MHz → 2025MHz;
Low-band signal input low-frequency range radio-frequency power amplifier tube core 101,201, high frequency band signal input high band radio-frequency power amplifier tube core 102,202;
The operating state of controller 104,204 control low-frequency range radio-frequency power amplifier tube cores 101,201 or high band radio-frequency power amplifier tube core 102,202, control single pole multiple throw 109 and selector switch SW1, SW2, SW3 are sent to antenna 009 with the output matching network of selection low-frequency range radio-frequency power amplifier tube core 101,201 or high band radio-frequency power amplifier tube core 102,202 correspondences and with low-band signal or high frequency band signal.
According to an aspect of the present invention, a plurality of output matching network comprises the first output matching network C1, L1, the second output matching network C2, L2 and the 3rd output matching network C3, L3;
The end of the first output matching network C1, L1 connects the output of low-frequency range radio-frequency power amplifier tube core 101,201, the other end of the first output matching network C1, L1 connects respectively the GSML that throws of the end of selector switch SW1 and single pole multiple throw 109, the other end of selector switch SW1 connects the end of the 3rd output matching network C3, L3, and the other end of the 3rd output matching network C3, L3 connects the WD1 that throws of single pole multiple throw by duplexer 108,208;
The end of the second output matching network C2, L2 connects the output of high band radio-frequency power amplifier tube core 102,202, and the other end of the second output matching network C2, L2 connects the GSMH that throws of single pole multiple throw 109.
According to an aspect of the present invention, a plurality of output matching network also comprises the 4th output matching network C4, L4;
The end of the 4th output matching network C4, L4 connects the end of selector switch SW2, and the other end of selector switch SW2 connects the GSMH that throws of single pole multiple throw 109;
The other end of the 4th output matching network C4, L4 connects the WD2 that throws of single pole multiple throw 109 by duplexer 107,207.
According to an aspect of the present invention, a plurality of output matching network also comprises the 5th output matching network C5, L5;
The end of the 5th output matching network C5, L5 connects the end of selector switch SW3, and the other end of selector switch SW3 connects the GSMH that throws of single pole multiple throw 109;
The other end of the 5th output matching network C5, L5 connects the WD3 that throws of single pole multiple throw 109 by duplexer 106; Perhaps the other end of the 5th output matching network C5, L5 connects the TD that throws of single pole multiple throw 109 by isolator 206.
According to an aspect of the present invention, at synchronization, selector switch SW1, a SW2, SW3 closure are arranged at most among some selector switch SW1, SW2, the SW3.
According to an aspect of the present invention, when low-band signal meets GSM850 standard or EGSM standard, controller 104,204 control low-frequency range radio-frequency power amplifier tube cores 101,201 work and high band radio-frequency power amplifier tube core 102,202 is not worked, and control selector switch SW1, selector switch SW2 and selector switch SW3 all open; Controller 104,204 is also controlled the hilted broadsword connection of single pole multiple throw and is thrown GSML;
When high frequency band signal meets DCS standard or PCS standard, controller 104,204 control low-frequency range radio-frequency power amplifier tube cores 101,201 are not worked and 102,202 work of high band radio-frequency power amplifier tube core, and control selector switch SW1, selector switch SW2 and selector switch SW3 all open; Controller 104,204 is also controlled the hilted broadsword connection of single pole multiple throw and is thrown GSMH;
When low-band signal meets WCDMA BAND V standard, WCDMA BAND VI standard or WCDMA BAND VIII standard, controller 104,204 control low-frequency range radio-frequency power amplifier tube cores 101,201 work and high band radio-frequency power amplifier tube core 102,202 is not worked, and control selector switch SW1 closure and selector switch SW2 and selector switch SW3 open; Controller 104,204 is also controlled the hilted broadsword connection of single pole multiple throw and is thrown WD1;
When high frequency band signal meets WCDMA BAND I standard, controller 104,204 control low-frequency range radio-frequency power amplifier tube cores 101,201 are not worked and 102,202 work of high band radio-frequency power amplifier tube core, and control selector switch SW2 closure and selector switch SW1 and selector switch SW3 open; Controller 104,204 is also controlled the hilted broadsword connection of single pole multiple throw and is thrown WD2;
When high frequency band signal meets WCDMA BAND II standard, WCDMA BAND III standard or TD-SCDMA standard, controller 104,204 control low-frequency range radio-frequency power amplifier tube cores 101,201 are not worked and 102,202 work of high band radio-frequency power amplifier tube core, and control selector switch SW3 closure and selector switch SW1 and selector switch SW2 open; The hilted broadsword that controller 104,204 is also controlled single pole multiple throw connects the hilted broadsword throw WD3 or control single pole multiple throw and connects and throw TD.
According to an aspect of the present invention, the first output matching network C1, L1, the second output matching network C2, L2 and the 3rd output matching network C3, L3, the 4th output matching network C4, L4 or the 5th output matching network C5, L5 are L-type, Pi type or T-shaped output matching network.
According to an aspect of the present invention, the first output matching network C1, L1, the second output matching network C2, L2 and the 3rd output matching network C3, L3, the 4th output matching network C4, L4 or the 5th output matching network C5, L5 are the cascading of any two kinds of output matching networks in the cascading of L-type, Pi type and T-shaped output matching network or L-type, Pi type and the T-shaped output matching network.
According to an aspect of the present invention, output matching network, selector switch SW1, SW2, SW3 and single pole multiple throw 109 are integrated in the first chip, low-frequency range radio-frequency power amplifier tube core 101,201 and high band radio-frequency power amplifier tube core 102,202 are integrated in the second chip, and controller 104,204 is integrated in the 3rd chip.
According to an aspect of the present invention, the first chip is the CMOS processing chip, and the second chip is the HBT processing chip, and the 3rd chip is the SOI processing chip.
According to an aspect of the present invention, the first chip, the second chip and the 3rd integrated chip are independent module.
According to an aspect of the present invention, the first output matching network C1, L1 are made of capacitor C 1 and inductance L 1, one end of inductance L 1 is connected to low-frequency range radio-frequency power amplifier 101,201 output, what the other end of inductance L 1 connected respectively the end of an end, selector switch SW1 of capacitor C 1 and single pole multiple throw 109 throws GSML, the other end ground connection of capacitor C 1;
The second output matching network C2, L2 are made of capacitor C 2 and inductance L 2, one end of inductance L 2 is connected to high band radio-frequency power amplifier 102,202 output, what the other end of inductance L 2 connected respectively an end of capacitor C 2 and single pole multiple throw 109 throws GSMH, the other end ground connection of capacitor C 2;
The 3rd output matching network C3, L3 are made of capacitor C 3 and inductance L 3, one end of inductance L 3 is connected to the other end of selector switch SW1, the other end of inductance L 3 connects an end of capacitor C 3 and throws WD1, the other end ground connection of capacitor C 3 by what duplexer 108,208 connected single pole multiple throws 109.
According to an aspect of the present invention, the 4th output matching network C4, L4 are made of capacitor C 4 and inductance L 4, and an end of inductance L 4 is connected to the end of selector switch SW2, and the other end of selector switch SW2 connects the GSMH that throws of single pole multiple throw 109; The other end of inductance L 4 connects an end of capacitor C 4 and throws WD2, the other end ground connection of capacitor C 4 by what duplexer 107,207 connected single pole multiple throws 109.
According to an aspect of the present invention, the 5th output matching network C5, L5 are made of capacitor C 5 and inductance L 5, and an end of inductance L 5 is connected to the end of selector switch SW3, and the other end of selector switch SW3 connects the GSMH that throws of single pole multiple throw 109; The other end of inductance L 5 connects an end of capacitor C 5 and connects throwing WD3 or throwing TD, the other end ground connection of capacitor C 5 by what isolator connected single pole multiple throw 109 of single pole multiple throws 109 by duplexer 106.
According to an aspect of the present invention, provide a kind of portable terminal, comprised base band control chip 61, front-end chip 62, RF front-end module 63 and antenna 64, RF front-end module 63 is above-mentioned configurable multimode radio-frequency front end module.
The configurable RF front-end module structure of reusable support multi-mode provided by the invention (GSM, WCDMA, TD-SCDMA etc.), reduce the area that RF front-end module takies the mobile phone terminal circuit board, thereby reduce the volume of mobile phone terminal, reduce the cost of mobile phone terminal.In the technical solution that the present invention proposes, the power amplifier of supporting GSM height frequency range, three different frequency ranges of WCDMA reached with two power amplifiers realize with the configurable output matching network of gating switch, and be integrated in the same module with the radio-frequency antenna switch, significantly reduced the volume and the area that takies the mobile terminal circuit plate of multimode radio-frequency front end module.Simultaneously, compact structure brings higher integrated level, thus so that also significantly reduction of the cost of portable terminal.
Embodiment
In the prior art, employed communication standard mainly contains GSM, WCDMA and TD-SCDMA etc.The employed transmit frequency band of each standard is as follows:
GSM standard
GSM850:824MHz→849MHz;
EGSM:880MHz→915MHz;
DCS:1710MHz→1785MHz;
PCS:1850MHz→1910MHz。
The WCDMA standard
Band?I:1920MHz→1980MHz;
Band?II:1850MHz→1910MHz;
Band?III:1710MHz→1785MHz;
Band?V:824MHz→849MHz;
Band?VI:830MHz→840MHz;
Band?VIII:880MHz→915MHz。
The TD-SCDMA standard
TD1900:1880MHz→1900MHz;
TD2000:2010MHz→2025MHz。
In fact the employed frequency range of above-mentioned each communication standard can be divided into two wider frequency sections and contain all standards, i.e. these two frequency ranges of low-frequency range 824MHz → 915MHz and high band 1710MHz → 2025MHz.
In order to reduce the area of RF front-end module, the present invention uses two radio-frequency powers to amplify tube core (being that the low-frequency range radio-frequency power amplifies tube core and the high band radio-frequency power amplifies tube core) and realizes the configurable multimode radio-frequency front end module.The low-frequency range radio-frequency power amplifies the radiofrequency signal that tube core is used for amplifying low-frequency range 824MHz → 915MHz; High band radio-frequency power amplifier tube core is used for amplifying the radiofrequency signal of high band 1710MHz → 2025MHz.
Embodiment one
Technical scheme proposed by the invention as shown in Figure 2.Low-frequency range radio-frequency power amplifier tube core 101, its input signal RF
IN1Can be GSM low-band signal (GSM850, EGSM), also can be the low-band signal (Band V, Band VI, Band VIII) of WCDMA; High band radio-frequency power amplifier tube core 102, its input signal RF
IN2Can be GSM high frequency band signal (DCS, PCS), also can be the high frequency band signal (Band I, Band II, Band III) of WCDMA.
The output of low-frequency range radio-frequency power amplifier tube core 101 is connected to inductance L
1An end; Inductance L
1The other end be connected respectively to capacitor C
1An end, the GSML that hilted broadsword nine is thrown radio-frequency antenna switch 109 throw and gating switch SW
1An end; Capacitor C
1The other end be connected to ground.Gating switch SW
1The other end be connected to inductance L
3An end; Inductance L
3The other end be connected respectively to capacitor C
3An end and the first end of duplexer 108; Capacitor C
3The other end be connected to ground.The second end of duplexer 108 is connected to hilted broadsword nine and throws the WD1 of radio-frequency antenna switch 109 and throw; The 3rd end of duplexer 108 is output as it and receives signal WD1R.
The output of high band radio-frequency power amplifier tube core 102 is connected to inductance L
2An end; Inductance L
2The other end be connected respectively to capacitor C
2An end, GSMH that hilted broadsword nine is thrown radio-frequency antenna switch 109 throw, gating switch SW
2An end and gating switch SW
3An end; Capacitor C
2The other end be connected to ground.Gating switch SW
2The other end be connected to inductance L
4An end; Inductance L
4The other end be connected respectively to capacitor C
4An end and the first end of duplexer 107; Capacitor C
4The other end be connected to ground.The second end of duplexer 107 is connected to hilted broadsword nine and throws the WD2 of radio-frequency antenna switch 109 and throw; The 3rd end of duplexer 107 is output as it and receives signal WD2R.Gating switch SW
3The other end be connected to inductance L
5An end; Inductance L
5The other end be connected respectively to capacitor C
5An end and the first end of duplexer 106; Capacitor C
5The other end be connected to ground.The second end of duplexer 106 is connected to hilted broadsword nine and throws the WD3 of radio-frequency antenna switch 109 and throw; The 3rd end of duplexer 106 is output as it and receives signal WD3R.The hilted broadsword that hilted broadsword nine is thrown radio-frequency antenna switch 109 is connected to antenna 009, and also comprises simultaneously 4 and throw RX1, RX2, RX3 and RX4, can be used for antenna 009 and receive four tunnel radiofrequency signals.Aforesaid hilted broadsword nine is thrown radio-frequency antenna switch 109, inductance L
1, L
2, L
3, L
4, L
5, capacitor C
1, C
2, C
3, C
4, C
5, and gating switch SW
1, SW
2, SW
3Formed configurable multimode radio-frequency front end network 103, wherein the state of the state of radio-frequency (RF) switch and gating switch has been subject to the control of controller 104; Simultaneously, the operating state of low-frequency range radio-frequency power amplifier tube core 101 and high band radio-frequency power amplifier tube core 102 (work or close) also is subject to the control of controller 104.Controller 104, configurable multimode radio-frequency front end network 103 and low-frequency range radio-frequency power amplifier tube core 101, high band radio-frequency power amplifier tube core 102 are integrated into a single module 105, can be called " configurable multimode radio-frequency front end module "; This module and three support duplexer 106, duplexer 107, duplexer 108 and the antennas 009 of three different frequency ranges of WCDMA, have formed the whole solution of multimode radio-frequency front end module.
This multimode radio-frequency front end module scheme can support the power amplification of GSM standard (GSM850, EGSM, DCS and PCS) frequency range, WCDMA standard (Band V, Band VI, Band VIII, Band I, BandII, Band III etc.) frequency band signals to transmit and receive.
When this scheme is used for amplifying emission GSM low-band signal (GSM850, EGSM), input signal RF
IN1Be GSM850 or EGSM radiofrequency signal, carry out power amplification through low-frequency range radio-frequency power amplifier tube core 101, be input to by inductance L
1And capacitor C
1The output matching network that forms; Radiofrequency signal after the power amplification is connected to hilted broadsword nine and throws the GSML of radio-frequency antenna switch 109 and throw.At this moment, controller 104 control low-frequency range radio-frequency power amplifier tube cores 101 work and high band radio-frequency power amplifier tube core 102 is closed, and control gating switch SW
1, SW
2And SW
3All open, hilted broadsword nine throws radio-frequency antenna switch 109 and antenna 009 is connected to GSML throws.Because gating switch SW
1, SW
2And SW
3All open, so that by inductance L
3, capacitor C
3The matching network that forms is by inductance L
4, capacitor C
4The matching network that forms is by inductance L
5, capacitor C
5The matching network that forms, and three duplexers 106,107,108 all are bypassed.
Need to prove the L-type matching network that the output matching network that amplifies for the GSM low-band signal is comprised of inductance L 1 and capacitor C 1 here; In fact, output matching network can be Pi type or T-shaped matching network according to actual needs, or the cascading of several matching network (L-type, Pi type, T-shaped), such as Fig. 5 or shown in Figure 6.
Output matching network shown in Figure 5 is by a T-shaped matching network 501 and the two-stage broadband matching network that 502 cascades of Pi type matching network realize.T-shaped matching network 501 comprises capacitor C
6, C
7And inductance L
6, Pi type matching network 502 comprises capacitor C
8, C
9And inductance L
7
Output matching network shown in Figure 6 is by a L-type matching network 503 and the two-stage broadband matching network that 504 cascades of L-type matching network realize.L-type matching network 503 comprises capacitor C 6 and inductance L 6, and L-type matching network 504 comprises capacitor C 7 and inductance L 7.
Alternatively, the way of realization of output matching network is not limited to above-mentioned form, and it can be the combination in any of L-type, T-shaped, three kinds of basic networks of Pi type, comprises mutual combination and the combination of self (such as two T-shaped cascades); And the progression of cascade also is not limited to two-stage, can be three grades or more multistage.The component value of the required element of output matching network need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
When this scheme is used for amplifying emission GSM high frequency band signal (DCS, PCS), input signal RF
IN2Be DCS or PCS radiofrequency signal, carry out power amplification through high band radio-frequency power amplifier tube core 102, be input to by inductance L
2And capacitor C
2The output matching network that forms; Radiofrequency signal after the power amplification is connected to hilted broadsword nine and throws the GSMH of radio-frequency antenna switch 109 and throw.At this moment, controller 104 control high band radio-frequency power amplifier tube cores 102 work and low-frequency range radio-frequency power amplifier tube core 101 is closed, and control gating switch SW
1, SW
2And SW
3All open, hilted broadsword nine throws radio-frequency antenna switch 109 and antenna 009 is connected to GSMH throws.Because gating switch SW
1, SW
2And SW
3All open, so that by inductance L
3, capacitor C
3The matching network that forms is by inductance L
4, capacitor C
4The matching network that forms is by inductance L
5, capacitor C
5The matching network that forms, and three duplexers 106,107,108 all are bypassed.
Need to prove that the output matching network that is used for the amplification of GSM high frequency band signal here is by inductance L
2And capacitor C
2The L-type matching network that forms; In fact, output matching network can be Pi type or T-shaped matching network according to actual needs, or the cascading of several matching network (L-type, Pi type, T-shaped), such as Fig. 5 or shown in Figure 6.
Output matching network shown in Figure 5 is by a T-shaped matching network 501 and the two-stage broadband matching network that 502 cascades of Pi type matching network realize.T-shaped matching network 501 comprises capacitor C
6, C
7And inductance L
6, Pi type matching network 502 comprises capacitor C
8, C
9And inductance L
7
Output matching network shown in Figure 6 is by a L-type matching network 503 and the two-stage broadband matching network that 504 cascades of L-type matching network realize.L-type matching network 503 comprises capacitor C 6 and inductance L 6, and L-type matching network 504 comprises capacitor C 7 and inductance L 7.
Alternatively, the way of realization of output matching network is not limited to above-mentioned form, and it can be the combination in any of L-type, T-shaped, three kinds of basic networks of Pi type, comprises mutual combination and the combination of self (such as two T-shaped cascades); And the progression of cascade also is not limited to two-stage, can be three grades or more multistage.The component value of the required element of output matching network need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
When this scheme is used for amplifying emission WCDMA low-band signal (Band V, Band VI, BandVIII), input signal RF
IN1Be WCDMA Band V or Band VI or Band VIII radiofrequency signal, carry out power amplification through low-frequency range radio-frequency power amplifier tube core 101.At this moment, controller 104 control low-frequency range radio-frequency power amplifier tube cores 101 work and high band radio-frequency power amplifier tube core 102 is closed, and control gating switch SW
1Closed, SW
2Open, SW
3Open, hilted broadsword nine throws radio-frequency antenna switch 109 and antenna 009 is connected to WD1 throws.Because this moment gating switch SW
1Closure, the output matching network of WCDMA low-band signal amplifier is by inductance L
1, capacitor C
1, inductance L
3, capacitor C
3Form, be connected to the first end of duplexer 108 through the signal WD1T after the matching network; The second end of duplexer 108 is connected to hilted broadsword nine and throws the WD1 of radio-frequency antenna switch 109 and throw; The 3rd end of duplexer 108 is output as it and receives signal WD1R.Because this moment gating switch SW
2And SW
3Open, by inductance L
4, capacitor C
4The matching network that forms is by inductance L
5, capacitor C
5The matching network that forms, and duplexer 106,107 all is bypassed.
Need to prove that the output matching network that is used for WCDMA low-band signal (Band V, Band VI, BandVIII) amplification here is by inductance L
1And capacitor C
1The L-type matching network that forms and by inductance L
3, capacitor C
3The L-type matching network cascade that forms forms; In fact, according to actual needs, above-mentioned second level matching network can be Pi type or T-shaped matching network, or the cascading of several matching network (L-type, Pi type, T-shaped), such as Fig. 5 or shown in Figure 6.
Output matching network shown in Figure 5 is by a T-shaped matching network 501 and the two-stage broadband matching network that 502 cascades of Pi type matching network realize.T-shaped matching network 501 comprises capacitor C
6, C
7And inductance L
6, Pi type matching network 502 comprises capacitor C
8, C
9And inductance L
7
Output matching network shown in Figure 6 is by a L-type matching network 503 and the two-stage broadband matching network that 504 cascades of L-type matching network realize.L-type matching network 503 comprises capacitor C 6 and inductance L 6, and L-type matching network 504 comprises capacitor C 7 and inductance L 7.
Alternatively, the way of realization of output matching network is not limited to above-mentioned form, and it can be the combination in any of L-type, T-shaped, three kinds of basic networks of Pi type, comprises mutual combination and the combination of self (such as two T-shaped cascades); And the progression of cascade also is not limited to two-stage, can be three grades or more multistage.The component value of the required element of output matching network need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
In addition, because the WCDMA standard is frequency division duplex system, signal transmits and receives and can adopt simultaneously identical antenna 009 to finish, therefore the low-band signal that receives WCDMA from antenna 009 is also thrown by WD1, and by duplexer, outputed to the radio-frequency (RF) transceiver chip (Transceiver) of portable terminal by its 3rd end WD1R.
When this scheme is used for amplifying emission WCDMA high frequency band signal (Band I), input signal RF
IN2Be WCDMA Band I radiofrequency signal, carry out power amplification through high band radio-frequency power amplifier tube core 102.At this moment, controller 104 control high band radio-frequency power amplifier tube cores 102 work and low-frequency range radio-frequency power amplifier tube core 101 is closed, and control gating switch SW
2Closed, SW
1Open, SW
3Open, hilted broadsword nine throws radio-frequency antenna switch 109 and antenna 009 is connected to WD2 throws.Because this moment gating switch SW
2Closure, the output matching network of WCDMA high frequency band signal (Band I) amplifier is by inductance L
2, capacitor C
2, inductance L
4, capacitor C
4Form, be connected to the first end of duplexer 107 through the signal WD2T after the matching network; The second end of duplexer 107 is connected to hilted broadsword nine and throws the WD2 of radio-frequency antenna switch 109 and throw; The 3rd end of duplexer 107 is output as it and receives signal WD2R.Because this moment gating switch SW
1And SW
3Open, by inductance L
3, capacitor C
3The matching network that forms is by inductance L
5, capacitor C
5The matching network that forms, and duplexer 106,108 all is bypassed.
Need to prove that the output matching network that is used for WCDMA high frequency band signal (Band I) amplification here is by inductance L
2And capacitor C
2The L-type matching network that forms and by inductance L
4, capacitor C
4The L-type matching network cascade that forms forms; In fact, according to actual needs, above-mentioned second level matching network can be Pi type or T-shaped matching network, or the cascading of several matching network (L-type, Pi type, T-shaped), such as Fig. 5 or shown in Figure 6.
Output matching network shown in Figure 5 is by a T-shaped matching network 501 and the two-stage broadband matching network that 502 cascades of Pi type matching network realize.T-shaped matching network 501 comprises capacitor C
6, C
7And inductance L
6, Pi type matching network 502 comprises capacitor C
8, C
9And inductance L
7
Output matching network shown in Figure 6 is by a L-type matching network 503 and the two-stage broadband matching network that 504 cascades of L-type matching network realize.L-type matching network 503 comprises capacitor C 6 and inductance L 6, and L-type matching network 504 comprises capacitor C 7 and inductance L 7.
Alternatively, the way of realization of output matching network is not limited to above-mentioned form, and it can be the combination in any of L-type, T-shaped, three kinds of basic networks of Pi type, comprises mutual combination and the combination of self (such as two T-shaped cascades); And the progression of cascade also is not limited to two-stage, can be three grades or more multistage.The component value of the required element of output matching network need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
In addition, because the WCDMA standard is frequency division duplex system, signal transmits and receives and can adopt simultaneously identical antenna 009 to finish, therefore the high frequency band signal that receives WCDMA from antenna 009 is also thrown by WD2, and by duplexer, outputed to the radio-frequency (RF) transceiver chip (Transceiver) of portable terminal by its 3rd end WD2R.
When this scheme is used for amplifying emission WCDMA high frequency band signal (Band II, Band III), input signal RF
IN2Be WCDMA Band II or Band III radiofrequency signal, carry out power amplification through high band radio-frequency power amplifier tube core 102.At this moment, controller 104 control high band radio-frequency power amplifier tube cores 102 work and low-frequency range radio-frequency power amplifier tube core 101 is closed, and control gating switch SW
3Closed, SW
1Open, SW
2Open, hilted broadsword nine throws radio-frequency antenna switch 109 and antenna 009 is connected to WD3 throws.Because this moment gating switch SW
3Closure, the output matching network of WCDMA high frequency band signal (BandII, BandIII) amplifier is by inductance L
2, capacitor C
2, inductance L
5And capacitor C
5Form, be connected to the first end of duplexer 106 through the signal WD3T after the matching network; The second end of duplexer 106 is connected to hilted broadsword nine and throws the WD3 of radio-frequency antenna switch 109 and throw; The 3rd end of duplexer 106 is output as it and receives signal WD3R.Because this moment gating switch SW
1And SW
2Open, by inductance L
3, capacitor C
3The matching network that forms is by inductance L
4, capacitor C
4The matching network that forms, and duplexer 107,108 all is bypassed.
Need to prove that the output matching network that is used for WCDMA high frequency band signal (Band II, BandIII) amplification here is by inductance L
2And capacitor C
2The L-type matching network that forms and by inductance L
5, capacitor C
5The L-type matching network cascade that forms forms; In fact, according to actual needs, above-mentioned second level matching network can be Pi type or T-shaped matching network, or the cascading of several matching network (L-type, Pi type, T-shaped), such as Fig. 5 or shown in Figure 6.
Output matching network shown in Figure 5 is by a T-shaped matching network 501 and the two-stage broadband matching network that 502 cascades of Pi type matching network realize.T-shaped matching network 501 comprises capacitor C
6, C
7And inductance L
6, Pi type matching network 502 comprises capacitor C
8, C
9And inductance L
7
Output matching network shown in Figure 6 is by a L-type matching network 503 and the two-stage broadband matching network that 504 cascades of L-type matching network realize.L-type matching network 503 comprises capacitor C 6 and inductance L 6, and L-type matching network 504 comprises capacitor C 7 and inductance L 7.
Alternatively, the way of realization of output matching network is not limited to above-mentioned form, and it can be the combination in any of L-type, T-shaped, three kinds of basic networks of Pi type, comprises mutual combination and the combination of self (such as two T-shaped cascades); And the progression of cascade also is not limited to two-stage, can be three grades or more multistage.The component value of the required element of output matching network need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
In addition, because the WCDMA standard is frequency division duplex system, signal transmits and receives and can adopt simultaneously identical antenna 009 to finish, therefore the high frequency band signal (Band II, Band III) that receives WCDMA from antenna 009 is also thrown by WD3, and by duplexer, outputed to the radio-frequency (RF) transceiver chip (Transceiver) of portable terminal by its 3rd end WD3R.
Hilted broadsword nine is thrown and has been comprised also in the radio-frequency antenna switch 109 that four of being used for receive path throw RX1, RX2, RX3 and RX4, under controller control, hilted broadsword nine is thrown radio-frequency antenna switch 109 can be connected to antenna 009 signal that these four one of them of throwing receive corresponding receive path.As required, this four the tunnel to receive the signal that path receives can be the radiofrequency signal of each frequency range in GSM, WCDMA, the various standards of TD-SCDMA.Need to prove that the radio-frequency antenna switch is that hilted broadsword nine is thrown form in the present embodiment, wherein has four to throw for receive path; In fact, in implementation, can increase and decrease flexibly according to actual needs the number of throwing for receive path, present embodiment is lifted four and is only thrown as an example explanation, rather than limitation of the present invention.
Following table has shown under the distinct communication standards state of each element in the multimode radio-frequency front end module:
In addition, according to the present invention, controller adopts the CMOS processing chip, low-frequency range radio-frequency power amplifier tube core 101 and high band radio-frequency power amplifier tube core 102 adopt same GaAs HBT processing chip, whole configurable multimode radio-frequency front end network 103 adopts CMOS SOI processing chip, these three integrated chips are in a RF front-end module 105, whole module is of a size of 6 * 6mm, be far smaller than the size of the product that adopts the prior art scheme, significantly cut down volume and the cost of portable terminal.
Embodiment two
Second embodiment of technical scheme proposed by the invention as shown in Figure 3, this scheme can be supported GSM, WCDMA and three kinds of mobile communication standards of TD-SCDMA simultaneously.Low-frequency range radio-frequency power amplifier tube core 201, its input signal RF
IN1Can be GSM low-band signal (GSM850, EGSM), also can be the low-band signal (Band V, Band VI, Band VIII) of WCDMA; High band radio-frequency power amplifier tube core 202, its input signal RF
IN2Can be GSM high frequency band signal (DCS, PCS), also can be the high frequency band signal (Band I, Band II, Band III) of WCDMA or the signal of TD-SCDMA.
The output of low-frequency range radio-frequency power amplifier tube core 201 is connected to inductance L
1An end; Inductance L
1The other end be connected respectively to capacitor C
1An end, the GSML that hilted broadsword nine is thrown radio-frequency antenna switch 209 throw and gating switch SW
1An end; Capacitor C
1The other end be connected to ground.Gating switch SW
1The other end be connected to inductance L
3An end; Inductance L
3The other end be connected respectively to capacitor C
3An end and the first end of duplexer 208; Capacitor C
3The other end be connected to ground.The second end of duplexer 208 is connected to hilted broadsword nine and throws the WD1 of radio-frequency antenna switch 209 and throw; The 3rd end of duplexer 208 is output as it and receives signal WD1R.
The output of high band radio-frequency power amplifier tube core 202 is connected to inductance L
2An end; Inductance L
2The other end be connected respectively to capacitor C
2An end, GSMH that hilted broadsword nine is thrown radio-frequency antenna switch 209 throw, gating switch SW
2An end and gating switch SW
3An end; Capacitor C
2The other end be connected to ground.Gating switch SW
2The other end be connected to inductance L
4An end; Inductance L
4The other end be connected respectively to capacitor C
4An end and the first end of duplexer 207; Capacitor C
4The other end be connected to ground.The second end of duplexer 207 is connected to hilted broadsword nine and throws the WD2 of radio-frequency antenna switch 209 and throw; The 3rd end of duplexer 207 is output as it and receives signal WD2R.Gating switch SW
3The other end be connected to inductance L
5An end; Inductance L
5The other end be connected respectively to capacitor C
5An end and the first end of isolator 206; Capacitor C
5The other end be connected to ground.The second end of isolator 206 is connected to hilted broadsword nine and throws the TD of radio-frequency antenna switch 209 and throw.The hilted broadsword that hilted broadsword nine is thrown radio-frequency antenna switch 209 is connected to antenna 009, and also comprises simultaneously 4 and throw RX1, RX2, RX3 and RX4, can be used for antenna 009 and receive four tunnel radiofrequency signals.Aforesaid hilted broadsword nine is thrown radio-frequency antenna switch 209, inductance L
1, L
2, L
3, L
4, L
5, capacitor C
1, C
2, C
3, C
4, C
5, and gating switch SW
1, SW
2, SW
3Formed configurable multimode radio-frequency front end network 203, wherein the state of the state of radio-frequency (RF) switch and gating switch has been subject to the control of controller 204; Simultaneously, the operating state of low-frequency range radio-frequency power amplifier tube core 201 and high band radio-frequency power amplifier tube core 202 (work or close) also is subject to the control of controller 204.Controller 204, configurable multimode radio-frequency front end network 203 and low-frequency range radio-frequency power amplifier tube core 201, high band radio-frequency power amplifier tube core 202 are integrated into a single module 205, can be called " configurable multimode radio-frequency front end module "; This module and two support the duplexers 207,208 of WCDMA different frequency ranges, are used for the isolator 206 of TD-SCDMA, and antenna 009, have formed the whole solution of multimode radio-frequency front end module.
This multimode radio-frequency front end module scheme can support GSM standard (GSM850, EGSM, DCS and PCS) frequency range, WCDMA standard (Band V, Band VI, Band VIII, Band I, BandII, Band III etc.) and the power amplification of TD-SCDMA standard bands signal to transmit and receive.
When this scheme is used for amplifying emission GSM low-band signal (GSM850, EGSM), input signal RF
IN1Be GSM850 or EGSM radiofrequency signal, carry out power amplification through low-frequency range radio-frequency power amplifier tube core 201, be input to by inductance L
1And capacitor C
1The output matching network that forms; Radiofrequency signal after the power amplification is connected to hilted broadsword nine and throws the GSML of radio-frequency antenna switch 209 and throw.At this moment, controller 204 control low-frequency range radio-frequency power amplifier tube cores 201 work and high band radio-frequency power amplifier tube core 202 is closed, and control gating switch SW
1, SW
2And SW
3All open, hilted broadsword nine throws radio-frequency antenna switch 209 and antenna 009 is connected to GSML throws.Because gating switch SW
1, SW
2And SW
3All open, so that by inductance L
3, capacitor C
3The matching network that forms is by inductance L
4, capacitor C
4The matching network that forms is by inductance L
5, capacitor C
5The matching network that forms, and duplexer 207,208 and isolator 206 all be bypassed.Need to prove that the output matching network that is used for the amplification of GSM low-band signal here is by inductance L
1And capacitor C
1The L-type matching network that forms; In fact, output matching network can be Pi type or T-shaped matching network according to actual needs, or the cascading of several matching network (L-type, Pi type, T-shaped); The component value of required element need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
When this scheme is used for amplifying emission GSM high frequency band signal (DCS, PCS), input signal RF
IN2Be DCS or PCS radiofrequency signal, carry out power amplification through high band radio-frequency power amplifier tube core 202, be input to by inductance L
2And capacitor C
2The output matching network that forms; Radiofrequency signal after the power amplification is connected to hilted broadsword nine and throws the GSMH of radio-frequency antenna switch 209 and throw.At this moment, controller 204 control high band radio-frequency power amplifier tube cores 202 work and low-frequency range radio-frequency power amplifier tube core 201 is closed, and control gating switch SW
1, SW
2And SW
3All open, hilted broadsword nine throws radio-frequency antenna switch 209 and antenna 009 is connected to GSMH throws.Because gating switch SW
1, SW
2And SW
3All open, so that by inductance L
3, capacitor C
3The matching network that forms is by inductance L
4, capacitor C
4The matching network that forms is by inductance L
5, capacitor C
5The matching network that forms, and duplexer 207,208 and isolator 206 all be bypassed.Need to prove that the output matching network that is used for the amplification of GSM high frequency band signal here is by inductance L
2And capacitor C
2The L-type matching network that forms; In fact, output matching network can be Pi type or T-shaped matching network according to actual needs, or the cascading of several matching network (L-type, Pi type, T-shaped); The component value of required element need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
When this scheme is used for amplifying emission WCDMA low-band signal (Band V, Band VI, BandVIII), input signal RF
IN1Be WCDMA Band V or Band VI or Band VIII radiofrequency signal, carry out power amplification through low-frequency range radio-frequency power amplifier tube core 201.At this moment, controller 204 control low-frequency range radio-frequency power amplifier tube cores 201 work and high band radio-frequency power amplifier tube core 202 is closed, and control gating switch SW
1Closed, SW
2Open, SW
3Open, hilted broadsword nine throws radio-frequency antenna switch 209 and antenna 009 is connected to WD1 throws.Because this moment gating switch SW
1Closure, the output matching network of WCDMA low-band signal amplifier is by inductance L
1, capacitor C
1, inductance L
3, capacitor C
3Form, be connected to the first end of duplexer 208 through the signal WD1T after the matching network; The second end of duplexer 208 is connected to hilted broadsword nine and throws the WD1 of radio-frequency antenna switch 209 and throw; The 3rd end of duplexer 208 is output as it and receives signal WD1R.Because this moment gating switch SW
2And SW
3Open, by inductance L
4, capacitor C
4The matching network that forms, by inductance L
5, capacitor C
5The matching network that forms, and duplexer 207, isolator 206 all are bypassed.Need to prove that the output matching network that is used for WCDMA low-band signal (Band V, Band VI, Band VIII) amplification here is by inductance L
1And capacitor C
1The L-type matching network that forms and by inductance L
3, capacitor C
3The L-type matching network cascade that forms forms; In fact, according to actual needs, above-mentioned second level matching network can be Pi type or T-shaped matching network, or the cascading of several matching network (L-type, Pi type, T-shaped); The component value of required element need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
In addition, because the WCDMA standard is frequency division duplex system, signal transmits and receives and can adopt simultaneously identical antenna 009 to finish, therefore the low-band signal that receives WCDMA from antenna 009 is also thrown by WD1, and by duplexer 208, outputed to the radio-frequency (RF) transceiver chip (Transceiver) of portable terminal by its 3rd end WD1R.
When this scheme is used for amplifying emission WCDMA high frequency band signal (Band I), input signal RF
IN2Be WCDMA Band I radiofrequency signal, carry out power amplification through high band radio-frequency power amplifier tube core 202.At this moment, controller 204 control high band radio-frequency power amplifier tube cores 202 work and low-frequency range radio-frequency power amplifier tube core 201 is closed, and control gating switch SW
2Closed, SW
1Open, SW
3Open, hilted broadsword nine throws radio-frequency antenna switch 209 and antenna 009 is connected to WD2 throws.Because this moment gating switch SW
2Closure, the output matching network of WCDMA high frequency band signal (Band I) amplifier is by inductance L
2, capacitor C
2, inductance L
4, capacitor C
4Form, be connected to the first end of duplexer 207 through the signal WD2T after the matching network; The second end of duplexer 207 is connected to hilted broadsword nine and throws the WD2 of radio-frequency antenna switch 209 and throw; The 3rd end of duplexer 207 is output as it and receives signal WD2R.Because this moment gating switch SW
1And SW
3Open, by inductance L
3, capacitor C
3The matching network that forms, by inductance L
5, capacitor C
5The matching network that forms, and isolator 206, duplexer 108 all are bypassed.Need to prove that the output matching network that is used for WCDMA high frequency band signal (Band I) amplification here is by inductance L
2And capacitor C
2The L-type matching network that forms and by inductance L
4, capacitor C
4The L-type matching network cascade that forms forms; In fact, according to actual needs, above-mentioned second level matching network can be Pi type or T-shaped matching network, or the cascading of several matching network (L-type, Pi type, T-shaped); The component value of required element need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.In addition, because the WCDMA standard is frequency division duplex system, signal transmits and receives and can adopt simultaneously identical antenna 009 to finish, therefore high band (Band I) signal that receives WCDMA from antenna 009 is also thrown by WD2, and by duplexer 207, outputed to the radio-frequency (RF) transceiver chip (Transceiver) of portable terminal by its 3rd end WD2R.
When this scheme is used for amplifying emission TD-SCDMA frequency band signals, input signal RF
IN2Be the TD-SCDMA radiofrequency signal, carry out power amplification through high band radio-frequency power amplifier tube core 202.At this moment, controller 204 control high band radio-frequency power amplifier tube cores 202 work and low-frequency range radio-frequency power amplifier tube core 201 is closed, and control gating switch SW
3Closed, SW
1Open, SW
2Open, hilted broadsword nine throws radio-frequency antenna switch 209 and antenna 009 is connected to TD throws.Because this moment gating switch SW
3Closure, the output matching network of TD-SCDMA signal amplifier is by inductance L
2, capacitor C
2, inductance L
5, capacitor C
5Form, be connected to the input of isolator 206 through the signal TDT after the matching network; The output of isolator 206 is connected to hilted broadsword nine and throws the TD of radio-frequency antenna switch 209 and throw.Because this moment gating switch SW
1And SW
2Open, by inductance L
3, capacitor C
3The matching network that forms is by inductance L
4, capacitor C
4The matching network that forms, and duplexer 207,208 all is bypassed.Need to prove that the output matching network that is used for the amplification of TD-SCDMA signal here is by inductance L
2And capacitor C
2The L-type matching network that forms and by inductance L
5, capacitor C
5The L-type matching network cascade that forms forms; In fact, according to actual needs, above-mentioned second level matching network can be Pi type or T-shaped matching network, or the cascading of several matching network (L-type, Pi type, T-shaped); The component value of required element need to be determined according to the concrete condition of side circuit.This is understandable for the professional and technical personnel of this area.
In addition, hilted broadsword nine is thrown and has been comprised also in the radio-frequency antenna switch 209 that four of being used for receive path throw RX1, RX2, RX3 and RX4, under controller control, hilted broadsword nine is thrown radio-frequency antenna switch 209 can be connected to antenna 009 signal that these four one of them of throwing receive corresponding receive path.As required, this four the tunnel to receive the signal that path receives can be the radiofrequency signal of each frequency range in GSM, WCDMA, the various standards of TD-SCDMA.Need to prove that the radio-frequency antenna switch is that hilted broadsword nine is thrown form in the present embodiment, wherein has four to throw for receive path; In fact, in implementation, can increase and decrease flexibly according to actual needs the number of throwing for receive path, present embodiment is lifted four and is only thrown as an example explanation, rather than limitation of the present invention.
Following table has shown under the distinct communication standards state of each element in the multimode radio-frequency front end module:
By relatively can finding out of embodiment one and embodiment two, WCDMA Band II, Band III and the TD-SCDMA in an embodiment configuration of gating switch and tube core are identical.If need to support simultaneously WCDMA Band II, Band III and TD-SCDMA, those skilled in the art only need to increase a gating switch again and get final product with corresponding matching network according to disclosed technical scheme of the present invention.
In addition, according to the present invention, controller adopts the CMOS processing chip, low-frequency range radio-frequency power amplifier tube core 201 and high band radio-frequency power amplifier tube core 202 adopt same GaAs HBT (heterojunction bipolar transistor) processing chip, whole configurable multimode radio-frequency front end network 203 adopts CMOSSOI (insulator silicon) processing chip, these three integrated chips are in a RF front-end module 205, whole module is of a size of 6 * 6mm, be far smaller than the size of the product that adopts the prior art scheme, significantly cut down volume and the cost of portable terminal.
Embodiment three
RF front-end module provided by the invention can be applied to support in the portable terminal of various communication standards, also can be applied in bimodulus or the multi-module mobile terminal such as GSM/WCDMA mode mobile terminal and WCDMA/TD-SCDMA mode mobile terminal etc.
Fig. 4 has shown the structural representation of portable terminal.Portable terminal comprises base band control chip 61, front-end chip (radio-frequency (RF) transceiver) 62, RF front-end module 63 and antenna 64.Base band control chip 61 is for the synthesis of the baseband signal that will launch, or the baseband signal that receives is decoded; Front-end chip 62, the baseband signal of coming from 61 transmission of base band control chip is processed and radio frequency signal generation, and the radiofrequency signal that generates sent to RF front-end module 63, or the radiofrequency signal of coming from RF front-end module 63 transmission processed and generate baseband signal, and the baseband signal that generates is sent to base band control chip 61; RF front-end module 63 is used for the radiofrequency signal of coming from front-end chip 62 transmission is carried out processing such as power amplification, or is sent to front-end chip 62 after receiving signal and should receiving the signal processing; Antenna 64, it is connected with RF front-end module 63, is used for receiving signal or emission from the next signal of RF front-end module 63 transmission from the external world.
Particularly, when carrying out the signal emission, base band control chip 61 is compiled into the information that will launch base band code (baseband signal) and it is transferred to front-end chip 62,62 pairs of these baseband signals of front-end chip are processed radio frequency signal generation, and with this radio signal transmission to RF front-end module 63, RF front-end module 63 will carry out power amplification and outwards launch by antenna 64 from the radiofrequency signal that front-end chip 62 transmission come; When carrying out the signal reception, the radio signal transmission that RF front-end module 63 will receive by antenna 64 is to front-end chip 62, front-end chip 62 will be converted to baseband signal from the radiofrequency signal that RF front-end module 63 transmission come, and with this base band signal transmission to base band control chip 61, will be interpreted as reception information from the baseband signal that front-end chip 62 transmission come by base band control chip 61 at last.
Alternatively, the described information that will launch or reception information can comprise audio-frequency information, address information (phone number, station address), Word message (short message literal, website literal), pictorial information etc.
The primary clustering of described base band control chip is processor (DSP, ARM etc.) and internal memory (such as SRAM, Flash).Alternatively, this base band control chip is realized by single baseband chip.
Preferably, described front-end chip is supported two kinds of baseband signal interfaces, and base band control chip that can tenaculum Analog Baseband function also can be supported the base band control chip of pure digi-tal simultaneously.