CN113225092B

CN113225092B - Radio frequency amplifying circuit and method

Info

Publication number: CN113225092B
Application number: CN202110402793.XA
Authority: CN
Inventors: 江成; 黄清华; 霍强
Original assignee: Honor Device Co Ltd
Current assignee: Honor Device Co Ltd
Priority date: 2021-04-14
Filing date: 2021-04-14
Publication date: 2022-11-08
Anticipated expiration: 2041-04-14
Also published as: CN113225092A

Abstract

The embodiment of the application provides a radio frequency amplifying circuit and a method. The circuit includes: the radio frequency amplifier comprises a radio frequency transmitting unit, a first switch, a first amplifying unit, a second amplifying unit and a power divider. The radio frequency transmitting unit comprises a first port and a second port; the first port is connected with the power divider, the first output end of the power divider is connected with the first amplification unit, the second output end of the power divider is connected with the first input end of the first switch, the second port is connected with the second input end of the first switch, and the output end of the first switch is connected with the second amplification unit; the power divider is used for dividing the GSM signal into a first signal and a second signal and respectively outputting the first signal and the second signal; the first switch is used for selecting and connecting a second output end or a second port of the power divider; the first amplifying unit is used for amplifying the first signal; the second amplifying unit is used for amplifying the second signal or the Sub3G signal. The GSM signal is divided into two paths through the power divider and amplified in the two Sub3G PAs, so that the GSM PA is cancelled, and the area of a PCB is reduced.

Description

Radio frequency amplifying circuit and method

Technical Field

The present application relates to the field of terminal technologies, and in particular, to a radio frequency amplification circuit and method.

Background

In a communication system, a Power Amplifier (PA) can increase the output power of a signal transmitted by a terminal device, thereby increasing the coverage and quality of the transmitted signal. With the development of 5G communication technology, the number of PAs inside the terminal device is greatly increased. The terminal equipment comprises a plurality of radio frequency power amplifier modules. For example: a radio frequency power amplifier module (Sub 3G PA) for providing power output for signals in a frequency band below 3 gigahertz (GHz), a radio frequency power amplifier module (GSM PA) for providing power output for signals in a global system for mobile communications (GSM), and the like.

In the existing design, a 5G mobile terminal needs to be externally provided with multiple PAs, the number of PAs is increased compared with that of a 4G mobile terminal, and the 5G terminal device at least comprises 2 Sub3G PAs and 1 GSM PA. The larger total size of Sub3G PA and GSM PA results in a larger area of Printed Circuit Board (PCB) of the terminal device, and finally makes the terminal device larger in volume.

Disclosure of Invention

The embodiment of the application provides a radio frequency amplification circuit and a method, a GSM signal is divided into two paths of signals through a power divider, the two paths of signals are amplified in two Sub3G PAs respectively, and then the two Sub3G PAs are used for replacing the GSM PA to realize GSM signal amplification, so that the area of a PCB is reduced, and the size and the cost of terminal equipment are reduced.

In a first aspect, an embodiment of the present application provides a radio frequency amplifying circuit, including: the radio frequency amplification device comprises a radio frequency transmitting unit, a first switch, a first amplification unit, a second amplification unit and a power divider; the radio frequency transmitting unit comprises a first port and a second port, wherein the first port is used for outputting global system for mobile communications (GSM) signals of a first frequency, and the second port is used for outputting Sub3G signals of a frequency band below 3 gigahertz of a second frequency; the first port is connected with the power divider, the first output end of the power divider is connected with the first amplification unit, the second output end of the power divider is connected with the first input end of the first switch, and the second port is connected with the second input end of the first switch; the output end of the first switch is connected with the second amplifying unit; the power divider is used for dividing the GSM signal with the first frequency into a first signal and a second signal, outputting the first signal at a first output end of the power divider, and outputting the second signal at a second output end of the power divider; the first switch is used for selecting and connecting a second output end or a second port of the power divider; the first amplifying unit is used for amplifying the first signal; the second amplifying unit is used for amplifying the second signal or the Sub3G signal of the second frequency; wherein the first frequency and the second frequency are both low frequency frequencies below 1 GHz.

The first amplifying unit and the second amplifying unit may be Sub3G PA. The GSM signal of the first frequency may be a GSM low frequency signal. The Sub3G signal of the second frequency is a Sub3G low frequency signal. Therefore, the GSM low-frequency signal output by the radio frequency transmitting unit can be divided into a first signal and a second signal through the power divider, and the first signal and the second signal are respectively amplified in the two Sub3G PAs, so that the two Sub3G PAs are used for replacing the GSM PA to realize GSM signal amplification, the area of a PCB is further reduced, and the size and the cost of terminal equipment are reduced. Also, the amplification performance of the Sub3G signal is not affected.

Optionally, the radio frequency amplifying circuit further includes a baseband processing unit, and the baseband processing unit is configured to control the radio frequency transmitting unit to output a GSM signal or a Sub3G signal, and control selective switching of the first switch, where the first switch is a single-pole double-throw switch.

Optionally, the baseband processing unit is configured to control the radio frequency transmitting unit to output a GSM signal of the first frequency at the first port, and the baseband processing unit is further configured to control the first switch to selectively connect to the second output end of the power divider, and the first amplifying unit is specifically configured to amplify the GSM signal of the first frequency; the baseband processing unit is used for controlling the radio frequency transmitting unit to output the Sub3G signal of the second frequency at the second port, the baseband processing unit is also used for controlling the first switch to selectively connect the second port, and the first amplifying unit is used for amplifying the Sub3G signal of the second frequency.

Optionally, the radio frequency amplifying circuit further includes a third switch; the radio frequency transmitting unit comprises a fifth port, and the fifth port is used for outputting a second Sub3G signal of a second frequency; two input ends of a third switch are respectively connected with the fifth port and the first output end of the power divider, the output end of the third switch is connected with the first amplifying unit, the third switch is used for selectively connecting the first output end or the fifth port of the power divider, and the third switch is a single-pole double-throw switch.

Optionally, the radio frequency amplifying circuit further includes: a second switch; the radio frequency transmitting unit further comprises a third port and a fourth port, wherein the third port is used for outputting a GSM signal of a third frequency, and the fourth port is used for outputting a Sub3G signal of a fourth frequency; the third port is connected with the first input end of the second switch; the output end of the second switch is connected with the first amplifying unit or the second amplifying unit; the fourth port is connected with the second input end of the second switch; the second switch is used for selecting and connecting a third port for outputting a GSM signal of a third frequency or a fourth port for outputting a Sub3G signal, and the second switch is a single-pole double-throw switch.

Optionally, the third frequency is a GSM high frequency, and the fourth frequency is 1.7GHz-2.2GHz.

Optionally, the circuit further comprises a phase shifter; a phase shifter is arranged between the first output end of the power divider and the input end of the first amplifying unit; or a phase shifter is arranged between the second output end of the power divider and the input end of the second amplifying unit.

Therefore, the phase of the amplified first signal or the amplified second signal can be adjusted, so that the phase of the amplified first signal is consistent with that of the amplified second signal, and the power of the amplified GSM signal is further improved.

Optionally, the circuit further includes a first voltage conversion unit and a second voltage conversion unit; the first voltage conversion unit comprises a first selection switch, a first boosting unit and a first voltage reduction unit, the first selection switch is used for selecting the first boosting circuit or the first voltage reduction circuit, and the first voltage conversion unit is used for providing corresponding power for the first amplification unit according to the circuit selected by the first selection switch; the second voltage conversion unit comprises a second selection switch, a second boosting unit and a second voltage reduction unit, the second selection switch is used for selecting the second boosting circuit or the second voltage reduction circuit, and the second voltage conversion unit is used for providing corresponding power for the second amplification unit according to the circuit selected by the second selection switch.

The voltage varying unit may include a DC/DC converter. The DC/DC converter includes: a boost circuit and a buck circuit. Therefore, the radio frequency amplification circuit can adjust the power of the amplified GSM signal or the amplified Sub3G signal output by the Sub3G PA by adjusting the voltage output by the DC/DC converter, so that the power consumption of the amplified signal is reduced while the power requirement is met.

Optionally, the baseband processing unit is further configured to determine a target voltage according to the first frequency, and send the target voltage to the first voltage conversion unit and/or the second voltage change unit; the first voltage change unit is specifically used for controlling the first selection switch to select the first booster circuit when the target voltage is greater than the threshold voltage; or when the target voltage is less than or equal to the threshold voltage, controlling the first selection switch to select the first voltage reduction circuit; and/or the second voltage change unit is specifically used for controlling the second selection switch to select the second booster circuit when the target voltage is greater than the threshold voltage; or when the target voltage is less than or equal to the threshold voltage, the second selection switch is controlled to select the second voltage reduction circuit.

Optionally, the circuit further includes a combiner and a first antenna, the output end of the first amplifying unit and the output end of the second amplifying unit are both connected to the input end of the combiner, and the output end of the combiner is connected to the first antenna; the combiner is used for combining the first signal amplified by the first amplifying unit and the second signal amplified by the second amplifying unit into a target signal; the first antenna is used for transmitting a target signal.

The target signal is an amplified GSM signal. Thus, the amplified GSM signal is radiated on one antenna, and the amplified GSM signal meets the power requirement of the GSM signal.

Optionally, the circuit further includes a second antenna and a third antenna; the second antenna is connected with the output end of the first amplifying unit and used for transmitting the first signal amplified by the first amplifying unit; the third antenna is connected with the output end of the second amplifying unit and used for transmitting the second signal amplified by the second amplifying unit.

Thus, the amplified GSM signal or the amplified Sub3G signal can be output on two antennas, and the radiation range of the amplified GSM signal or the amplified Sub3G signal is increased.

Optionally, a filter is disposed after each of the first amplifying unit and the second amplifying unit.

Therefore, stray signals generated during the amplified GSM signals can be filtered, signal interference is reduced, and the quality of the GSM signals is improved.

In a second aspect, an embodiment of the present application provides a radio frequency amplification method, which is applied to the radio frequency amplification circuit of the first aspect, and the method includes: a baseband processing unit receives first scheduling information of a GSM signal of a first frequency; the base band processing unit controls the radio frequency transmitting unit to output a GSM signal of a first frequency at a first port according to the first scheduling information; the baseband processing unit controls the first switch to select and connect the second output end of the power divider; the power divider divides the GSM signal of the first frequency into a first signal and a second signal; the first amplifying unit amplifies the first signal; the second amplifying unit amplifies the second signal.

Or the baseband processing unit receives second scheduling information of the Sub3G signal of the second frequency; the baseband processing unit controls the radio frequency transmitting unit to output a Sub3G signal of a second frequency at a second port according to the second scheduling information; the baseband processing unit controls the first switch to selectively connect the second port; the radio frequency transmitting unit outputs a Sub3G signal of a second frequency; the second amplification unit amplifies the Sub3G signal of the second frequency.

Optionally, the method further comprises: when the baseband processing unit receives the first scheduling information, the baseband processing unit controls the third switch to select the first output end of the power divider; or the baseband processing unit controls the radio frequency transmitting unit to output a second Sub3G signal of a second frequency at a fifth port according to the second scheduling information; the baseband processing unit controls the third switch to select the fifth port; the first amplification unit amplifies a second Sub3G signal of a second frequency.

Optionally, the method further comprises: the baseband processing unit receives third scheduling information of a GSM signal with a third frequency; the base band processing unit controls the radio frequency transmitting unit to output a GSM signal of a third frequency at a third port according to the third scheduling information; the baseband processing unit controls the second switch to selectively connect with the third port; the radio frequency transmitting unit outputs a GSM signal of a third frequency; the first amplification unit amplifies a GSM signal of a third frequency.

Or the baseband processing unit receives fourth scheduling information of the Sub3G signal of the fourth frequency; the baseband processing unit controls the radio frequency transmitting unit to output a Sub3G signal of a fourth frequency at a fourth port according to the fourth scheduling information; the baseband processing unit controls the second switch to selectively connect with the fourth port; the radio frequency transmitting unit outputs a Sub3G signal of a fourth frequency; the first amplification unit amplifies the Sub3G signal of the fourth frequency.

Optionally, the method further comprises: when the GSM signal of the first frequency is a low-frequency GSM signal, the baseband processing unit controls the first amplifying unit and the second amplifying unit to be switched on to a low-frequency mode; and when the GSM signal of the third frequency is a high-frequency GSM signal, the baseband processing unit controls the first amplifying unit to be switched on to the intermediate frequency mode.

Optionally, the method further comprises: the baseband processing unit determines a target voltage according to the first frequency and sends the target voltage to the first voltage conversion unit and/or the second voltage change unit; a first voltage change unit which controls the first selection switch to select the first boost circuit when the target voltage is greater than the threshold voltage; or when the target voltage is less than or equal to the threshold voltage, controlling the first selection switch to select the first voltage reduction circuit; and/or the second voltage change unit controls the second selection switch to select the second booster circuit when the target voltage is greater than the threshold voltage; or when the target voltage is less than or equal to the threshold voltage, the second selection switch is controlled to select the second voltage reduction circuit.

Optionally, the method further comprises: the combiner combines the first signal amplified by the first amplifying unit and the second signal amplified by the second amplifying unit into a target signal; the base band processing unit controls the first antenna to be switched to a preset channel of a GSM signal; the first antenna transmits a target signal.

Optionally, the method further comprises: the baseband processing unit controls the second antenna and/or the third antenna to be switched to a preset channel of the GSM signal; the second antenna transmits the first signal amplified by the first amplifying unit; the third antenna transmits the second signal amplified by the second amplifying unit.

The beneficial effects of the terminal device provided in the second aspect and each possible design of the second aspect may refer to the beneficial effects brought by each possible implementation manner of the first aspect, and are not described herein again.

In a third aspect, an embodiment of the present application provides a terminal device, where the terminal device includes: a mobile phone, a tablet personal computer (tablet personal computer), a laptop computer (laptop computer), a Personal Digital Assistant (PDA), a Mobile Internet Device (MID), a wearable device (wearable device), or the like.

The terminal device comprises the radio frequency amplifying circuit of the first aspect, wherein the radio frequency amplifying circuit is used for amplifying the GSM signal and the Sub3G signal.

The beneficial effects of the terminal device provided in the third aspect and each possible design of the third aspect may refer to the beneficial effects brought by each possible structure of the first aspect and the second aspect, and are not described herein again.

Drawings

Fig. 1 is a schematic diagram of a hardware system architecture of a terminal device according to an embodiment of the present disclosure;

fig. 2 is a schematic diagram of a terminal device software system architecture according to an embodiment of the present application;

fig. 3 is a schematic diagram of a PA in a terminal device according to an embodiment of the present application;

fig. 4 is a schematic diagram of a circuit structure for amplifying a GSM signal or a Sub3G signal according to an embodiment of the present application;

fig. 5 is a schematic structural diagram of a radio frequency amplifying circuit according to an embodiment of the present disclosure;

fig. 6 is a schematic structural diagram of a specific rf amplifying circuit according to an embodiment of the present disclosure;

fig. 7 is a schematic structural diagram of GSM low-frequency signal amplification without adding a phase shifter according to an embodiment of the present application;

fig. 8 is a schematic structural diagram of GSM low-frequency signal amplification after adding a phase shifter according to an embodiment of the present application;

fig. 9 is a schematic flowchart of a control method for a radio frequency amplifying circuit according to an embodiment of the present disclosure;

fig. 10 is a schematic flowchart of a control method for a radio frequency amplifying circuit according to an embodiment of the present disclosure;

fig. 11 is a schematic diagram illustrating a control method of a DC/DC converter according to an embodiment of the present disclosure;

fig. 12 is a schematic diagram of a circuit structure for amplifying a GSM signal or a Sub3G signal according to an embodiment of the present application;

fig. 13 is a schematic structural diagram of a radio frequency amplifying circuit according to an embodiment of the present disclosure;

fig. 14 is a schematic structural diagram of a GSM radio frequency amplifying circuit according to an embodiment of the present application;

fig. 15 is a schematic structural diagram of a specific GSM rf amplifying circuit according to an embodiment of the present application;

fig. 16 is a schematic flowchart of a control method for a radio frequency amplifying circuit according to an embodiment of the present disclosure;

fig. 17 is a schematic circuit structure diagram for amplifying a GSM signal or a Sub3G signal according to an embodiment of the present application.

Detailed Description

In the embodiments of the present application, terms such as "first" and "second" are used to distinguish the same or similar items having substantially the same function and action. For example, the first device and the second device are only used for distinguishing different devices, and the sequence order thereof is not limited. Those skilled in the art will appreciate that the terms "first," "second," and the like do not denote any order or importance, but rather the terms "first," "second," and the like do not denote any order or importance.

It is noted that, in the present application, words such as "exemplary" or "for example" are used to mean exemplary, illustrative, or descriptive. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.

It should be noted that the network architecture and the service scenario described in the embodiment of the present application are for more clearly illustrating the technical solution of the embodiment of the present application, and do not constitute a limitation to the technical solution provided in the embodiment of the present application, and it is known by a person skilled in the art that the technical solution provided in the embodiment of the present application is also applicable to similar technical problems along with the evolution of the network architecture and the appearance of a new service scenario.

The PA multiplexing circuit of the embodiment of the present application can be applied to an electronic device having a communication function,

the electronic device includes a terminal device, which may also be referred to as a terminal (terminal), a User Equipment (UE), a Mobile Station (MS), a Mobile Terminal (MT), and so on. The terminal device may be a mobile phone (mobile phone), a smart tv, a wearable device, a tablet computer (Pad), a computer with a wireless transceiving function, a Virtual Reality (VR) terminal device, an Augmented Reality (AR) terminal device, a wireless terminal in industrial control (industrial control), a wireless terminal in self-driving (self-driving), a wireless terminal in remote surgery (remote medical supply), a wireless terminal in smart grid (smart grid), a wireless terminal in transportation safety (transportation safety), a wireless terminal in smart city (smart city), a wireless terminal in smart home (smart home), and so on. The embodiment of the present application does not limit the specific technology and the specific device form adopted by the terminal device.

In order to better understand the embodiments of the present application, the following describes the structure of the terminal device according to the embodiments of the present application:

fig. 1 shows a schematic configuration diagram of a terminal device 100. The terminal device may include: a Radio Frequency (RF) circuit 110, a memory 120, an input unit 130, a display unit 140, a sensor 150, an audio circuit 160, a wireless fidelity (WiFi) module 170, a processor 180, a power supply 190, and a bluetooth module 1100. Those skilled in the art will appreciate that the terminal device configuration shown in fig. 2 is not intended to be limiting of terminal devices and may include more or fewer components than those shown, or some components may be combined, or a different arrangement of components.

The following specifically describes each constituent component of the terminal device with reference to fig. 1:

the RF circuit 110 may be used for receiving and transmitting signals during information transmission and reception or during a call, and in particular, receives downlink information of a base station and then processes the received downlink information to the processor 180; in addition, the data for designing uplink is transmitted to the base station. Typically, the RF circuit includes, but is not limited to, an antenna, at least one amplifier, a transceiver, a coupler, a Low Noise Amplifier (LNA), a duplexer, and the like. In addition, the RF circuitry 110 may also communicate with networks and other devices via wireless communications. The wireless communication may use any communication standard or protocol, including but not limited to global system for mobile communications (GSM), general Packet Radio Service (GPRS), code Division Multiple Access (CDMA), wideband Code Division Multiple Access (WCDMA), long Term Evolution (LTE), email, and Short Message Service (SMS).

The memory 120 may be used to store software programs and modules, and the processor 180 executes various functional applications and data processing of the terminal device by operating the software programs and modules stored in the memory 120. The memory 120 may mainly include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application program (such as a sound playing function, an image playing function, etc.) required by at least one function, a boot loader (boot loader), and the like; the storage data area may store data (such as audio data, a phonebook, etc.) created according to the use of the terminal device, and the like. Further, the memory 120 may include high speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other volatile solid state storage device. It is understood that, in the embodiment of the present application, the memory 120 stores a program for the bluetooth device to connect back.

The input unit 130 may be used to receive input numeric or character information and generate key signal inputs related to user settings and function control of the terminal device. Specifically, the input unit 130 may include a touch panel 131 and other input devices 132. The touch panel 131, also referred to as a touch screen, may collect touch operations of a user on or near the touch panel 131 (e.g., operations of the user on or near the touch panel 131 using any suitable object or accessory such as a finger or a stylus pen), and drive the corresponding connection device according to a preset program. Alternatively, the touch panel 131 may include two parts, i.e., a touch detection device and a touch controller. The touch detection device detects the touch direction of a user, detects a signal brought by touch operation and transmits the signal to the touch controller; the touch controller receives touch information from the touch sensing device, converts the touch information into touch point coordinates, sends the touch point coordinates to the processor 180, and receives and executes commands sent from the processor 180. In addition, the touch panel 131 may be implemented by various types such as a resistive type, a capacitive type, an infrared ray, and a surface acoustic wave. The input unit 130 may include other input devices 132 in addition to the touch panel 131. In particular, other input devices 132 may include, but are not limited to, one or more of a physical keyboard, function keys (such as volume control keys, switch keys, etc.), a trackball, a mouse, a joystick, and the like.

The display unit 140 may be used to display information input by a user or information provided to the user and various menus of the terminal device. The display unit 140 may include a display panel 141, and optionally, the display panel 141 may be configured in the form of a Liquid Crystal Display (LCD), an organic light-emitting diode (OLED), or the like. Further, the touch panel 131 can cover the display panel 141, and when the touch panel 131 detects a touch operation on or near the touch panel 131, the touch operation is transmitted to the processor 180 to determine the type of the touch event, and then the processor 180 provides a corresponding visual output on the display panel 141 according to the type of the touch event. Although in fig. 1, the touch panel 131 and the display panel 141 are two independent components to implement the input and output functions of the terminal device, in some embodiments, the touch panel 131 and the display panel 141 may be integrated to implement the input and output functions of the terminal device.

The terminal device may also include at least one sensor 150, such as a light sensor, motion sensor, and other sensors. Specifically, the light sensor may include an ambient light sensor that adjusts the brightness of the display panel 141 according to the brightness of ambient light, and a proximity sensor that turns off the display panel 141 or a backlight when the terminal device is moved to the ear. As one of the motion sensors, the accelerometer sensor can detect the magnitude of acceleration in each direction (generally, three axes), detect the magnitude and direction of gravity when stationary, and can be used for applications (such as horizontal and vertical screen switching, related games, magnetometer attitude calibration) for recognizing the attitude of the terminal device, and related functions (such as pedometer and tapping) for vibration recognition; as for other sensors such as a gyroscope, a barometer, a hygrometer, a thermometer, and an infrared sensor, which can be configured in the terminal device, detailed description is omitted here.

Audio circuitry 160, speaker 161, and microphone 162 may provide an audio interface between the user and the terminal device. The audio circuit 160 may transmit the electrical signal converted from the received audio data to the speaker 161, and convert the electrical signal into a sound signal for output by the speaker 161; on the other hand, the microphone 162 converts the collected sound signal into an electrical signal, which is received by the audio circuit 160 and converted into audio data, and then the audio data is processed by the audio data output processor 180, and then the processed audio data is sent to another terminal device through the RF circuit 110, or the audio data is output to the memory 120 for further processing.

WiFi belongs to a short-distance wireless transmission technology, and the terminal device can help a user to send and receive e-mails, browse webpages, access streaming media and the like through the WiFi module 170, and provides wireless broadband internet access for the user. Although fig. 1 shows the WiFi module 170, it is understood that it does not belong to the essential constitution of the terminal device, and may be omitted entirely as needed within the scope not changing the essence of the invention.

The processor 180 is a control center of the terminal device, connects various parts of the entire terminal device using various interfaces and lines, and performs various functions of the terminal device and processes data by operating or executing software programs or modules stored in the memory 120 and calling data stored in the memory 120, thereby integrally monitoring the terminal device. Alternatively, processor 180 may include one or more processing units; preferably, the processor 180 may integrate an application processor, which mainly handles operating systems, user interfaces, application programs, etc., and a modem processor, which mainly handles wireless communications. It will be appreciated that the modem processor described above may not be integrated into the processor 180. It is understood that in the embodiment of the present application, the memory 120 stores a program for bluetooth device loopback, and the processor 180 may be configured to call and execute the program for bluetooth device loopback stored in the memory 120, so as to implement the method for bluetooth device loopback in the embodiment of the present application.

The terminal device also includes a power supply 190 (e.g., a battery) for supplying power to the various components, and preferably, the power supply may be logically connected to the processor 180 via a power management system, so that functions such as managing charging, discharging, and power consumption may be performed via the power management system.

The bluetooth technology belongs to short distance wireless transmission technology, and terminal equipment can establish bluetooth connection with other terminal equipment that possess bluetooth module through bluetooth module 1100 to data transmission carries out based on the bluetooth communication link. The bluetooth module 1100 may be Bluetooth Low Energy (BLE) or a module according to actual needs. It can be understood that, in the case that the terminal device in the embodiment of the present application is a user terminal and a service tool, the terminal device includes a bluetooth module. It is to be understood that the bluetooth module does not belong to the essential constitution of the terminal device and may be omitted entirely as needed within the scope not changing the essence of the invention, for example, the bluetooth module may not be included in the server.

Although not shown, the terminal device may further include a camera. Optionally, the position of the camera on the terminal device may be front-located, rear-located, or built-in (the camera body may be extended when in use), which is not limited in this application.

Optionally, the terminal device may include a single camera, two cameras, three cameras, or the like, which is not limited in this embodiment of the present application. Cameras include, but are not limited to, wide angle cameras, tele cameras, or depth cameras, among others.

For example, the terminal device may include three cameras, one being a main camera, one being a wide camera, and one being a tele camera.

Optionally, when the terminal device includes a plurality of cameras, the plurality of cameras may be all front-mounted, all rear-mounted, all built-in, at least partially front-mounted, at least partially rear-mounted, or at least partially built-in, and the like, which is not limited in this embodiment of the application.

Fig. 2 is a block diagram of a software configuration of the terminal device 100 according to the embodiment of the present application.

The layered architecture divides the software into several layers, each layer having a clear role and division of labor. The layers communicate with each other through a software interface. In some embodiments, the Android system is divided into four layers, an application layer, an application framework layer, an Android runtime (Android runtime) and system library, and a kernel layer from top to bottom.

The application layer may include a series of application packages.

As shown in fig. 2, the application packages may include camera, calendar, phone, map, phone, music, settings, mailbox, video, social, etc. applications.

The application framework layer provides an Application Programming Interface (API) and a programming framework for the application program of the application layer. The application framework layer includes a number of predefined functions.

As shown in FIG. 2, the application framework layers may include a window manager, content provider, resource manager, view system, notification manager, and the like.

The window manager is used for managing window programs. The window manager can obtain the size of the display screen, judge whether a status bar exists, lock the screen, touch the screen, drag the screen, intercept the screen and the like.

The content provider is used to store and retrieve data and make it accessible to applications. The data may include video, images, audio, calls made and answered, browsing history and bookmarks, phone books, etc.

The view system includes visual controls such as controls to display text, controls to display pictures, and the like. The view system may be used to build applications. The display interface may be composed of one or more views. For example, the display interface including the short message notification icon may include a view for displaying text and a view for displaying pictures.

The resource manager provides various resources for the application, such as localized strings, icons, pictures, layout files, video files, and the like.

The notification manager enables the application to display notification information in the status bar, can be used to convey notification-type messages, can disappear automatically after a brief dwell, and does not require user interaction. Such as a notification manager used to inform download completion, message alerts, etc. The notification manager may also be a notification that appears in the form of a chart or scroll bar text at the top status bar of the system, such as a notification of a background running application, or a notification that appears on the screen in the form of a dialog window. For example, text information is prompted in the status bar, a prompt tone is given, the terminal device vibrates, and an indicator light flashes.

The Android runtime comprises a core library and a virtual machine. The Android runtime is responsible for scheduling and managing an Android system.

The core library comprises two parts: one part is a function which needs to be called by java language, and the other part is a core library of android.

The application layer and the application framework layer run in a virtual machine. And executing java files of the application program layer and the application program framework layer into a binary file by the virtual machine. The virtual machine is used for performing the functions of object life cycle management, stack management, thread management, safety and exception management, garbage collection and the like.

The system library may include a plurality of functional modules. For example: surface manager (surface manager), media Libraries (Media Libraries), three-dimensional graphics processing Libraries (e.g., openGL ES), 2D graphics engine (e.g., SGL), SSL (Secure Socket Layer), etc.

The surface manager is used to manage the display subsystem and provide fusion of 2D and 3D layers for multiple applications.

The media library supports a variety of commonly used audio, video format playback and recording, and still image files, among others. The media library may support a variety of audio-video encoding formats, such as MPEG4, h.264, MP3, AAC, AMR, JPG, PNG, and the like.

The three-dimensional graphic processing library is used for realizing three-dimensional graphic drawing, image rendering, synthesis, layer processing and the like.

The 2D graphics engine is a drawing engine for 2D drawing.

The kernel layer is a layer between hardware and software. The inner core layer at least comprises a display driver, a camera driver, an audio driver and a sensor driver.

The current terminal equipment usually contains a plurality of power amplifier modules. Illustratively, as shown in fig. 3, a terminal device 301 includes a GSM PA302, a first Sub3G PA303, and a second Sub3G PA304. The GSM PA302 works at 0.5GHz-2GHz, and the first Sub3G PA303 and the second Sub3G PA304 work at 0.5GHz-3 GHz. The working frequency bands of the GSM PA302 and the two Sub3G PAs are overlapped, and the overlapped frequency band is about 0.5GHz-2GHz, which provides a foundation for PA multiplexing.

Specifically, fig. 4 is a schematic diagram of a circuit structure for amplifying a GSM signal or a Sub3G signal according to an embodiment of the present disclosure. The process of the terminal device amplifying the GSM signal or Sub3G signal is explained below with reference to fig. 4.

As shown in fig. 4, the circuit includes a radio frequency transmitting unit 401, a first DC/DC converter 402, a second DC/DC converter 403, a first Sub3G PA404, a second Sub3G PA405, a GSM PA406, a filtering unit 407, a first filter 408, a second filter 409, an antenna switch 410, and an antenna 411.

The rf transmitting unit 401 includes a plurality of output ports, and is configured to output a Sub3G high frequency signal, a Sub3G intermediate frequency signal, a Sub3G low frequency signal, a GSM PA high frequency signal, and a GSM PA low frequency signal.

The first DC/DC converter 402 is used to supply power to the first Sub3G PA 404. The first DC/DC converter 402 includes a step-down circuit to reduce the power supply voltage to a suitable target voltage for supplying power to the first Sub3G PA 404.

The second DC/DC converter 403 is used to supply power to the second Sub3G PA 405. The second DC/DC converter 403 includes a step-down circuit that can step down the supply voltage to an appropriate target voltage to supply power to the second Sub3G PA 405.

The first Sub3G PA404 is used to amplify the Sub3G high frequency signal, the Sub3G intermediate frequency signal, and the Sub3G low frequency signal output by the radio frequency transmitting unit 401, and the second Sub3G PA405 is also used to amplify the Sub3G high frequency signal, the Sub3G intermediate frequency signal, and the Sub3G low frequency signal output by the radio frequency transmitting unit 401. The first Sub3G PA404 and the second Sub3G PA405 each include 3 inlets, which are a Sub3G high frequency signal inlet, a Sub3G intermediate frequency signal inlet, and a Sub3G low frequency signal inlet, respectively.

The GSM PA406 is configured to amplify a GSM PA high-frequency signal and a GSM PA low-frequency signal output by the radio frequency transmitting unit 401, and includes 2 access ports, which are a GSM PA high-frequency signal access port and a GSM PA low-frequency signal access port, respectively.

The filtering unit 407 is configured to filter a spurious signal generated during the Sub3G signal after amplification, reduce distortion of the Sub3G signal after amplification, and perform channel switching. The filtering unit 407 includes a 3G/4G/5G filter, a duplexer, a switch array, and the like.

The first filter 408 is used to filter out spurious signals generated when amplifying GSM high frequency signals. The second filter 409 is used for filtering out spurious signals generated when the GSM low-frequency signals are amplified.

The antenna switch 410 is used to gate the radio frequency channel radiated to the antenna, thereby selecting the transmission of either Sub3G signals or GSM signals.

The antenna 411 is used to convert the amplified Sub3G signal or the amplified GSM signal into an electromagnetic wave with a corresponding wavelength and radiate the electromagnetic wave into the air. One or more antennas may be included in the antenna 411.

The amplification process of the sub3G high frequency signal is described below with reference to fig. 4. Illustratively, the radio frequency transmitting unit 401 outputs a Sub3G high frequency signal, which is accessed through a Sub3G high frequency signal access port in the first Sub3G PA404 or the second Sub3G PA405, amplified in the first Sub3G PA404 or the second Sub3G PA405, and output to the filtering unit 407 to filter a stray signal generated during amplification, and then select a suitable channel through the antenna switch 410, and radiate the Sub3G high frequency signal at the corresponding antenna 411. The amplification principle and the amplification process of the sub3G intermediate frequency signal and the sub3G low frequency signal are similar to the amplification principle and the amplification process of the sub3G high frequency signal, and are not repeated here.

The process of amplifying the GSM high frequency signal is described below with reference to fig. 4. Illustratively, the rf transmitting unit 401 outputs a GSM high frequency signal, which is amplified in the GSM PA406 through a GSM high frequency signal access port in the GSM PA406, filtered by the first filter 408 to remove a spurious signal, and then output to the antenna switch 410 to select a suitable channel, and radiate the GSM high frequency signal at the corresponding antenna 411. The amplification principle and the amplification process of the GSM low-frequency signal are similar to those of the GSM high-frequency signal, and are not described herein again.

However, in the structures shown in fig. 3 and 4, a large number of PAs leads to a large PCB area, and a large power consumption is also caused by a plurality of PAs.

It should be noted that the GSM signal requires higher power than the Sub3G signal. The power of the GSM signal output by the Sub3G PA alone may not meet the power requirements of the GSM signal. If a single Sub3G PA is improved, the power of the GSM signal output by the improved Sub3G PA can meet the power requirement of the GSM signal, which may cause performance degradation of other systems, for example, increase of power consumption when the Sub3G signal is output.

In view of this, an embodiment of the present application provides a radio frequency amplification circuit, which increases a voltage boost circuit in a DC/DC converter, increases a supply voltage of Sub3G PAs, and divides a GSM signal into two paths through a power divider, and amplifies the two paths in two Sub3G PAs, so as to further increase a power of the GSM signal, thereby removing the GSM PAs, reducing a PCB area and power consumption, and reducing a size and power consumption of a terminal device.

For ease of understanding, the examples are given in part for illustration of concepts related to embodiments of the present application.

1. GSM signal: the signal refers to signals of 4 frequency bands sent by a terminal device, and the 4 frequency bands are respectively 850MHz, 900MHz, 1800MHz and 1900MHz. Signals of 850MHz and 900MHz in the 4 bands of GSM signals are collectively referred to as GSM low frequency signals or collectively referred to as low frequency GSM signals, and signals of 1800MHz and 1900MHz are collectively referred to as GSM high frequency signals or collectively referred to as high frequency GSM signals.

2. GSM PA: refers to a radio frequency power amplifier module for providing power output for GSM signals.

3. Sub3G signal: in 3G, 4G and 5G signals sent by the terminal equipment, signals of a frequency band below 3GHz are sent; the low-frequency signal of the Sub3G signal is a signal lower than 1GHz, the intermediate-frequency signal of the Sub3G is a Sub3G signal between 1.7GHz and 2.2GHz, and the high-frequency signal of the Sub3G is a Sub3G signal between 2.2GHz and 3GHz.

4. Sub3G PA: and the radio frequency power amplifier module is used for providing power output for the Sub3G signal. The Sub3G PA includes 3 power amplifiers, which are a low frequency power amplifier, an intermediate frequency power amplifier, and a high frequency power amplifier. Wherein, the low-frequency power amplifier is used for amplifying Sub3G signals lower than 1 GHz. The intermediate frequency power amplifier is used for amplifying Sub3G signals between 1.7GHz and 2.2GHz. The high-frequency power amplifier is used for amplifying Sub3G signals between 2.2GHz and 3GHz.

It can be understood that the Sub3G PA further includes a plurality of control switches, and the control switches are configured to select different output ports according to signals of different frequency bands, enter different filters, and filter out signals of different frequency bands.

It should be noted that the terminal device may include two Sub3G PAs, one Sub3G PA is used to amplify signals in a frequency band below 3GHz in the 5G signals, and the other Sub3G PA is used to amplify signals in a frequency band below 3GHz in the 4G signals.

5. A baseband processing unit: the relative arrangement of the amplification paths for generating the GSM signal and the Sub3G signal. The relevant settings include one or more of: setting of voltage output by the first DC/DC converter, setting of output voltage of the second DC/DC converter, setting of an output port of a radio frequency transmitting unit, selection of a first Sub3G PA mode and a second Sub3G PA mode, setting of a signal channel in an antenna switch and the like; the baseband processing unit may include a modem or the like.

6. The radio frequency transmitting unit: used for converting the digital signal of the baseband processing unit into a radio frequency signal. The radio frequency transmitting unit may output a GSM signal and a Sub3G signal. The radio frequency transmitting unit may be represented by an RFIC or a Transceiver (Transceiver).

It should be noted that the radio frequency transmitting unit may include a plurality of ports for outputting GSM signals and Sub3G signals. Illustratively, the radio frequency transmitting unit includes a GSM LB port, a GSM HB port, a HB TX1 port, an MB TX1 port, an LB TX2 port, a HB TX2 port, and a HB TX2 port, etc., for outputting a GSM low frequency signal, a GSM high frequency signal, a Sub3G intermediate frequency signal, a Sub3G low frequency signal, a Sub3G high frequency signal, and a Sub3G intermediate frequency signal, respectively.

7. DC/DC converter: for converting the supply voltage to a target voltage, for example, the target voltage output by the DC/DC converter may power the Sub3G PA.

It is understood that the terminal device may need to output a high-power GSM signal or Sub3G signal, and may also need a low-power GSM signal or Sub3G signal. When the terminal equipment needs to output a high-power GSM signal or a Sub3G signal, the supply voltage needed by the Sub3G PA is larger. When the terminal equipment needs to output a low-power GSM signal or a Sub3G signal, the supply voltage needed by the Sub3G PA is small. Therefore, the target voltage of the DC/DC converter may be higher than the power supply voltage, and may be equal to or lower than the power supply voltage. Further, the DC/DC converter may operate in a boost (boost) mode and may also operate in a buck (buck) mode.

The DC/DC converter in the embodiment of the application comprises a boosting circuit and a voltage reduction circuit. Illustratively, the input port of the DC/DC converter is provided with a channel selection switch. The channel selection switch is used for switching a boost mode or a buck mode of the DC/DC converter. The channel selection switch includes 1 input terminal and 2 output terminals. The input end of the channel selection switch is an input port of the DC/DC converter, the voltage of the input end is power supply voltage, the first output end is connected with the voltage reduction module, and the second output end is connected with the voltage boosting module. The voltage reduction module is used for realizing the voltage reduction function. The boost module includes a Charge Pump (Charge Pump) for doubling the power supply voltage. The output of the charge pump may be connected to a voltage step-down module, so that fine adjustment of the voltage may be achieved. The DC/DC converter can be implemented in various forms, and the embodiments of the present application do not limit this.

The technical means shown in the present application will be described in detail below with reference to specific examples. It should be noted that, for the same or similar contents, description is not repeated in different embodiments.

It should be noted that, after the power supply voltage is increased, the power requirement of the GSM high-frequency signal can be satisfied for the output GSM high-frequency signal power by 1 Sub3G PA. The power requirement for GSM low frequency signals is 3dB higher than GSM high frequency signals. GSM low frequency signals require 2 Sub3G PAs for power amplification. The GSM low frequency signal can be power amplified in two ways, one is power combining, and the other is uplink diversity.

The following describes an amplification circuit and an amplification principle of a GSM signal in power combining.

Fig. 5 is a schematic structural diagram of a radio frequency amplifying circuit according to an embodiment of the present disclosure. As shown in fig. 5, the structure includes: the power divider 501, the first DC/DC converter 502, the first Sub3G PA503, the second Sub3G PA504, the second DC/DC converter 505, the combiner 506, and the first antenna 507.

The power divider 501 is configured to divide a GSM signal into two identical first GSM signals and second GSM signals.

The first DC/DC converter 502 and the second DC/DC converter 505 are used to convert the supply voltage to respective target voltages and to supply power to the first Sub3G PA503 and the second Sub3G PA504, respectively. Each of the first DC/DC converter 502 and the second DC/DC converter 505 includes a step-up circuit and a step-down circuit, and can output different target voltages.

The first Sub3G PA503 and the second Sub3G PA504 are used to amplify GSM signals. The first Sub3G PA503 and the second Sub3G PA504 may include a plurality of power amplifiers. The first Sub3G PA503 and the second Sub3G PA504 may have the same or different structures, and this is not limited in this embodiment of the present application.

The combiner 506 is configured to combine the two paths of amplified first GSM signals and the amplified second GSM signal into one path of amplified GSM signal.

The first antenna 507 is used to convert the amplified GSM signal into an electromagnetic wave of a corresponding wavelength and radiate the electromagnetic wave into the air.

The process of amplifying the GSM signal is described below with reference to fig. 5. Illustratively, the GSM signal is divided into a first GSM signal and a second GSM signal by the power divider 501, the first GSM signal and the second GSM signal are amplified in the first Sub3G PA503 and the second Sub3G PA504, respectively, the amplified first GSM signal and the amplified second GSM signal are combined into one path of amplified GSM signal by the combiner 506, and the amplified GSM signal is output to the first antenna 507 for radiation.

Fig. 6 is a schematic structural diagram of a specific rf amplifying circuit according to an embodiment of the present disclosure. As shown in fig. 6, includes: a power supply 601, a radio frequency transmitting unit 602, a baseband processing unit 603, a first DC/DC converter 604, a power divider 605, a second switch 606, a phase shifter 607, a first switch 608, a second DC/DC converter 609, a first Sub3G PA610, a second Sub3G PA611, a first filter 612, a second filter 613, a third filter 614, a combiner 615, an antenna switch 616, and a first antenna 617.

The power supply 601 is used for outputting a power supply voltage to supply power to the whole radio frequency amplification circuit.

The radio frequency transmitting unit 602 is configured to output a GSM high frequency signal or a GSM low frequency signal.

The baseband processing unit 603 is used for relevant setting of the GSM high-frequency signal and GSM low-frequency signal amplification path; the relevant settings include one or more of: setting of the output voltage of the first DC/DC converter 604, setting of the output voltage of the second DC/DC converter 609, setting of the output port of the radio frequency transmitting unit 602, selection of the first Sub3G PA610 mode and selection of the second Sub3G PA611 mode, setting of the signal channel in the antenna switch 616, and the like.

The first DC/DC converter 604 is configured to convert the power voltage to a first target voltage and output the first target voltage to power the first Sub3G PA 610. The possible structure and operation principle of the first DC/DC converter 604 can be referred to the description of the related concepts, and will not be described herein.

The power divider 605 is configured to divide the first GSM low-frequency signal into a first GSM low-frequency signal and a second GSM low-frequency signal.

The second switch 606 is used to control the input of the GSM high frequency signal or Sub3G intermediate frequency signal. The second switch 606 is also used to prevent backflow of GSM high frequency signals or Sub3G intermediate frequency signals. The second switch 606 may be an SP2T switch, a single pole double throw switch, or other switch. The second switch 606 may be a discrete switch or a switch integrated in the PA. Illustratively, the second switch 606 includes 2 inputs and 1 output; one input end is connected with a GSM high-frequency signal output port of the radio frequency transmitting unit 603, and the other input end is connected with a Sub3G intermediate frequency signal output port of the radio frequency transmitting unit 602; the output end of the second switch 606 is connected to the intermediate frequency access port of the first Sub3G PA 610. The embodiment of the present application does not limit the specific structure and model of the second switch 606.

The first switch 608 is used to control the input of the GSM low frequency signal or Sub3G low frequency signal. The first switch 608 is also used to prevent backflow of GSM low frequency signals or Sub3G low frequency signals. The first switch 608 may be an SP2T switch, a single pole double throw switch, or other switch. The first switch 608 may be a discrete switch or may be a switch integrated in the PA. Illustratively, the first switch 608 includes 2 inputs and 1 output. One input end is connected with one output end of the power divider 605, and the other input end is connected with a Sub3G low-frequency signal output port of the radio frequency transmitting unit 602; the output of the first switch 608 is connected to the low frequency access of the second Sub3G PA 611. The embodiment of the present application does not limit the specific structure and type of the first switch 608.

The phase shifter 607 is configured to adjust a phase of the first GSM low-frequency signal or the second GSM low-frequency signal, and ensure that the phase of the amplified first GSM low-frequency signal is consistent with that of the amplified second GSM low-frequency signal during power synthesis, so that the power of the amplified GSM signal can reach the maximum power. The phase shifter may be an inductive-capacitive (LC) discrete device, such as a Π -shaped CLC network; or may be a device such as a low temperature Co-fired ceramic (LTCC) process phase shifter. The structure of the phase shifter is not limited in the embodiments of the present application.

The operation of the phase shifter will be described with reference to fig. 7 and 8.

Fig. 7 is a schematic diagram of the GSM low frequency signal amplification structure without adding a phase shifter. Fig. 7 includes a power divider 701, a first Sub3G PA702, a second Sub3G PA703, and a combiner 704.

After passing through the power divider 701, the GSM low-frequency signal is divided into a first GSM low-frequency signal and a second GSM low-frequency signal, and the first GSM low-frequency signal and the second GSM low-frequency signal are respectively subjected to power amplification in the first Sub3G PA702 and the second Sub3G PA 703. When the amplified first GSM low-frequency signal and the amplified second GSM low-frequency signal are synthesized in the combiner 704, phases may be inconsistent, so that the power of the synthesized GSM low-frequency signal may not reach the maximum power, and even the power of the synthesized GSM low-frequency signal is reduced. The phase deviation may be related to one or more of: PCB routing length, PA port setting, PA output matching, PA type selection difference and the like.

Fig. 8 is an enlarged schematic diagram of the GSM low frequency signal after adding the phase shifter. Fig. 8 includes a power divider 801, a phase shifter 802, a first Sub3G PA803, a second Sub3G PA804, and a combiner 805. Two ends of the phase shifter 802 are connected to the power divider 801 and the second Sub3G PA804, respectively.

After passing through the power divider 801, the GSM low-frequency signal is divided into a first GSM low-frequency signal and a second GSM low-frequency signal, and the first GSM low-frequency signal is power-amplified in the first Sub3G PA 803. Wherein the second GSM low frequency signal is phase adjusted by the phase shifter 802 and then power amplified in the second Sub3G PA 804. When the amplified first GSM low-frequency signal and the amplified second GSM low-frequency signal are synthesized in the combiner 805, the phases are the same. The power of the synthesized GSM low-frequency signal can reach the maximum power.

In a possible implementation manner, the phase shifter may be debugged in advance according to the phase difference data of the first channel and the second channel, and the phase difference data may be obtained through simulation. The phase shifter can also be debugged after phase difference information of the first channel and the second channel is measured in the debugging stage.

In a possible implementation, the phase shifter may be on any one of the paths between the power divider and the combiner. The embodiments of the present application do not limit the specific position of the phase shifter. Optionally, the phase shifter is arranged on any one of the paths between the power divider and the first Sub3G PA or between the power divider and the second Sub3G PA. Thus, the power consumption of the phase shifter is small.

The second DC/DC converter 609 is configured to convert the power supply voltage to a second target voltage and output the second target voltage to power the second Sub3G PA 611. The second DC/DC converter 609 includes a step-up circuit and a step-down circuit. Possible configurations and operating principles of the second DC/DC converter 609 can be found in the description of the related concepts above, and are not described in detail here.

The first Sub3G PA610 and the second Sub3G PA611 are used to amplify GSM signals.

The first filter 612, the second filter 613 and the third filter 614 are respectively configured to filter spurious signals in the amplified GSM high frequency signal, the amplified first GSM low frequency signal and the amplified second GSM low frequency signal.

The combiner 615 is configured to combine the two paths of signals into one path of signal, and combine the amplified first GSM low-frequency signal and the amplified second GSM low-frequency signal into an amplified GSM low-frequency signal.

The antenna switch 616 is used to gate the radio frequency channel radiated to the antenna, thereby adjusting the transmission direction of the GSM signal.

Optionally, the radio frequency amplification circuit further includes a frequency divider, and the frequency divider is configured to divide the amplified GSM signal or the amplified Sub3G signal to a high frequency antenna, an intermediate frequency antenna, or a low frequency antenna.

The first antenna 617 functions to convert the amplified GSM signal into an electromagnetic wave of a corresponding wavelength and radiate the electromagnetic wave into the air. One or more antennas may be included in the first antenna 617. Illustratively, when the first antenna 617 includes a plurality of antennas, a portion of the antennas may be used to radiate low frequency signals, and another portion of the antennas may be used to radiate high frequency signals and intermediate frequency signals.

Optionally, the radio frequency amplification circuit may further include a third switch, where the third switch is used to control input of a GSM low-frequency signal or a Sub3G low-frequency signal. The third switch is also used to prevent backflow of GSM low frequency signals or Sub3G low frequency signals. The third switch may be an SP2T switch, a single pole double throw switch, or other switch. The third switch may be a discrete switch or a switch integrated in the PA. Illustratively, the third switch includes 2 inputs and 1 output. One input end is connected with one output end of the power divider, and the other input end is connected with a Sub3G low-frequency signal output port of the radio frequency transmitting unit; and the output end of the third switch is connected with the low-frequency access port of the first Sub3G PA. The embodiment of the present application does not limit the specific structure and type of the third switch.

The GSM signal includes a GSM high frequency signal and a low frequency signal. The following describes the amplification process of the GSM high frequency signal and the GSM low frequency signal, respectively.

In the process of amplifying the GSM high-frequency signal, the radio frequency transmitting unit 602 outputs the GSM high-frequency signal through the GSM HB port, and the GSM high-frequency signal enters the intermediate frequency amplifier in the first Sub3G PA610 through the second switch 606 for power amplification. The amplified GSM high frequency signal is filtered by the first filter 612 to remove the spurious signal generated during power amplification, and the first antenna 617 selected by the antenna switch 616 is selected to radiate outwards.

The control of each module in the process of amplifying the GSM high-frequency signal by the circuit diagram shown in fig. 6 will be described with reference to fig. 9.

Fig. 9 is a flowchart illustrating a method for controlling a radio frequency amplifying circuit according to an embodiment of the present disclosure. As shown in fig. 9, the method includes:

and S901, the terminal equipment receives the scheduling of the GSM high-frequency signal.

Specifically, the baseband processing unit receives scheduling information of a GSM high-frequency signal.

In the embodiment of the present application, the scheduling of the GSM high frequency signal is used to instruct to transmit the GSM high frequency signal. The scheduling of the GSM high frequency signal includes: the power and direction of the GSM signal, etc.

And S902, the baseband processing unit controls the radio frequency transmitting unit to set an output port of the radio frequency transmitting unit at a port for outputting a GSM high-frequency signal.

Illustratively, the baseband processing unit controls the radio frequency transmitting unit to set an output port of the radio frequency transmitting unit at a GSM HB port, and then the baseband transmitting unit outputs a GSM high-frequency signal at the GSM HB port.

In a possible implementation manner, the baseband processing unit controls, through the output control signal or in any other manner, the radio frequency transmitting unit to be disposed at the port for outputting the GSM high-frequency signal. The embodiment of the present application does not limit the control method of the baseband processing unit.

S903, the radio frequency transmitting unit outputs a GSM high-frequency signal.

And S904, the baseband processing unit controls the first Sub3G PA to be switched on to the intermediate frequency mode, and controls the first DC/DC converter to output the first target voltage.

It will be appreciated that the GSM high frequency signal is amplified by the intermediate frequency amplifier of the first Sub3G PA. The intermediate frequency mode means that the first Sub3G PA switches on the intermediate frequency amplifier. In a possible implementation manner, the baseband processing unit controls a plurality of switches inside the first Sub3G PA to switch on the GSM high-frequency signal channel.

In the embodiment of the present application, the target voltage refers to a supply voltage of the first Sub3G PA when the GSM high-frequency signal is amplified. In a possible implementation manner, the baseband processing unit controls the first DC/DC converter to output the first target voltage through a control signal or in an arbitrary manner. The method of controlling the first DC/DC converter may refer to a method shown in fig. 10 described below.

And S905, the baseband processing unit controls the second switch and the antenna switch to be switched to a preset GSM channel.

S906, the antenna radiates the GSM high-frequency signal.

In a possible implementation manner, the terminal device may execute the above S902, S904, and S905 in parallel. The sequence of executing the above S901 to S906 by the terminal device is not limited in the embodiment of the present application.

In this way, the terminal device can power-amplify the GSM high-frequency signal by Sub3G PA.

During the amplification process of the GSM low frequency signal, the radio frequency transmitting unit 602 outputs the GSM low frequency signal through the GSM LB port, and the GSM low frequency signal is divided into two paths of signals by the power divider 605, where the two paths of signals are the first GSM low frequency signal and the second GSM low frequency signal, respectively. The first GSM low frequency signal is phase-adjusted by the phase shifter 607, and then enters the low frequency amplifier of the first Sub3G PA610 for power amplification. The amplified first GSM low frequency signal is filtered by the second filter 613 to remove the spurious signals generated during power amplification. The second GSM low frequency signal enters the low frequency amplifier in the second Sub3G PA611 via the first switch 608 for power amplification. The second GSM low-frequency signal after amplification is filtered by the third filter 614 to remove the spurious signal generated during power amplification.

The amplified first GSM low-frequency signal and the amplified second GSM low-frequency signal are synthesized by a combiner 615 to be an amplified GSM low-frequency signal; the amplified GSM low frequency signal is radiated to the outside by selecting the proper first antenna 617 through the antenna switch 616.

Fig. 10 is a flowchart illustrating a method for controlling a radio frequency amplifying circuit according to an embodiment of the present disclosure. As shown in fig. 10, the method includes:

and S1001, the terminal equipment receives the scheduling of the GSM low-frequency signal.

Specifically, the baseband processing unit receives scheduling information of the GSM low-frequency signal.

In the embodiment of the present application, the scheduling of the GSM low frequency signal is used to instruct to transmit the GSM low frequency signal. The scheduling of the GSM low frequency signal includes: the power and direction of the GSM signal, etc.

And S1002, the baseband processing unit controls the radio frequency transmitting unit to set an output port of the radio frequency transmitting unit at a port for outputting the GSM low-frequency signal.

Illustratively, the baseband processing unit controls the rf transmitting unit to set the output port of the rf transmitting unit at the GSM LB port, and then the baseband transmitting unit outputs the GSM low-frequency signal at the GSM LB port.

In a possible implementation manner, the baseband processing unit controls, through the output control signal or in any other manner, the radio frequency transmitting unit to be disposed at the port for outputting the GSM low-frequency signal. The embodiment of the present application does not limit the control manner of the baseband processing unit.

And S1003, the radio frequency transmitting unit outputs a GSM low-frequency signal.

And S1004, the baseband processing unit controls the first Sub3G PA and the second Sub3G PA to be switched on to a low-frequency mode, and controls the first DC/DC converter and the second DC/DC converter to output a first target voltage and a second target voltage respectively.

It will be appreciated that the GSM low frequency signal is amplified by the low frequency amplifier of the Sub3G PA. The low frequency mode refers to the Sub3G PA turning on the low frequency amplifier. In a possible implementation manner, the baseband processing unit controls a plurality of switches inside the first Sub3G PA and the second Sub3G PA to turn on the GSM low-frequency signal channel.

In this embodiment of the application, the first target voltage refers to a supply voltage of the first Sub3G PA when the GSM low-frequency signal is amplified. The second target voltage is the supply voltage of the second Sub3G PA when the GSM low frequency signal is amplified. The first target voltage may be the same as the second target voltage or may be different from the second target voltage.

In a possible implementation manner, the baseband processing unit controls the first DC/DC converter to output the first target voltage through a control signal or in an arbitrary manner. The baseband processing unit controls the second DC/DC converter to output a second target voltage through a control signal or in any mode. The method of controlling the first DC/DC converter and the second DC/DC converter can be referred to the method shown in fig. 11 described below.

And S1005, the baseband processing unit controls the first switch and the antenna switch to be switched to a preset GSM channel.

And S1006, the antenna radiates GSM low-frequency signals.

In this way, the terminal equipment can perform power amplification on the GSM low-frequency signal through the Sub3G PA.

In summary, the radio frequency amplification circuit provided by the embodiment of the application can realize amplification of a GSM signal through the Sub3G PA, meet the power requirement of the GSM signal, reduce the use of the GSM PA, reduce the area of the PCB, and save space.

The control procedure of the DC/DC converter will be described based on the control methods shown in fig. 9 and 10.

Fig. 11 is a flowchart of a control method of a DC/DC converter. As shown in fig. 11, the method includes:

s1101, the baseband processing unit transmits the target voltage to the DC/DC converter.

In a possible implementation, the baseband processing unit sends the target voltage to the DC/DC converter through a voltage control signal or any other means.

S1102, the DC/DC converter judges whether the target voltage is higher than a threshold voltage.

In the embodiment of the present application, the threshold voltage may be a certain voltage value equal to or slightly lower than the power supply voltage. Illustratively, the battery voltage is 3.8V and the threshold voltage may be 3.6V.

And S1103, if the target voltage is higher than the threshold voltage, switching the DC/DC converter to a boost mode.

And S1104, if the target voltage is equal to or lower than the threshold voltage, the DC/DC converter is switched to a voltage reduction mode.

And S1105, the DC/DC converter outputs the target voltage to supply power to the PA.

Therefore, the DC/DC converter can output a proper target voltage to supply power to the PA, and the power consumption of the PA can be reduced when the power requirements of the GSM signal and the Sub3G signal are ensured.

Fig. 12 is a schematic circuit diagram of a circuit for amplifying a GSM signal or a Sub3G signal according to an embodiment of the present application. As shown in fig. 12, includes: a power supply 1201, a radio frequency transmission unit 1202, a baseband processing unit 1203, a first DC/DC converter 1204, a power divider 1205, a second switch 1206, a phase shifter 1207, a first switch 1208, a second DC/DC converter 1209, a first Sub3G PA1210, a second Sub3G PA1211, a filtering unit 1212, a first filter 1213, a second filter 1214, a third filter 1215, a combiner 1216, an antenna switch 1217, and a first antenna 1218.

The possible structure and function of the individual modules in fig. 12 can be referred to the above-mentioned related concepts and the description of the corresponding modules in fig. 6.

The process of amplifying the GSM signal by the rf amplifying circuit shown in fig. 12 can refer to the process of amplifying the GSM signal by the rf amplifying circuit shown in fig. 6. And will not be described in detail herein.

The amplification process of the sub3G signal is described below with reference to fig. 12.

When the terminal device receives the scheduling of the Sub3G high frequency signal, the radio frequency transmitting unit 1202 outputs the Sub3G high frequency signal through the Sub3G high frequency signal port, performs power amplification in the first Sub3G PA1210 or the second Sub3G PA1211 through the Sub3G high frequency signal access port in the first Sub3G PA1210 or the second Sub3G PA1211, outputs the amplified signal to the filtering unit 1212 to filter out a stray signal generated during amplification, selects an appropriate channel through the antenna switch 1217, and radiates the Sub3G high frequency signal at the corresponding first antenna 1218. In the sub3G high-frequency signal amplification process, the control method of each module is similar to that of each module in the GSM signal amplification, and is not described herein again. The amplification principle and the amplification process of the sub3G intermediate frequency signal and the sub3G low frequency signal are similar to the amplification principle and the amplification process of the sub3G high frequency signal, and are not repeated here.

The amplification process of the sub3G signal is consistent with that before and is not changed. The performance of the sub3G signal amplification is also unchanged. Therefore, the radio frequency amplifying circuit provided by the embodiment of the application cannot influence the performance of the sub3G signal.

In a possible implementation, the radio frequency amplifying circuit includes a third switch. Fig. 13 is a schematic structural diagram of a radio frequency amplifying circuit according to an embodiment of the present application. As shown in fig. 13, the radio frequency amplification circuit includes: the antenna comprises a power supply 1301, a radio frequency transmitting unit 1302, a baseband processing unit 1303, a first DC/DC converter 1304, a power divider 1305, a second switch 1306, a phase shifter 1307, a first switch 1308, a second DC/DC converter 1309, a first Sub3G PA1310, a second Sub3G PA1311, a filtering unit 1312, a first filter 1313, a second filter 1314, a third filter 1315, a combiner 1316, an antenna switch 1317, a first antenna 1318 and a third switch 1319.

The possible structure and function of each block in fig. 13 can be referred to the related concepts described above and the description of the corresponding block in fig. 6.

Optionally, the radio frequency amplification circuit may further include a third switch 1319, where the third switch 1319 is used to control input of a GSM low frequency signal or a Sub3G low frequency signal. The third switch 1319 is also used to prevent backflow of GSM low frequency signals or Sub3G low frequency signals. The third switch 1319 may be an SP2T switch or other switch. The third switch 1319 may be a discrete switch or a switch integrated in the PA. Illustratively, the third switch 1319 includes 2 inputs and 1 output. One input end is connected with one output end of the power divider 1305, and the other input end is connected with a Sub3G low-frequency signal output port of the radio frequency transmitting unit 1302; the output of the third switch 1319 is connected to the low frequency access of the first Sub3G PA 1310. The embodiment of the present application does not limit the specific structure and type of the third switch 1319.

The process of amplifying the GSM signal by the rf amplifying circuit shown in fig. 13 can refer to the process of amplifying the GSM signal by the rf amplifying circuit shown in fig. 6 and fig. 12. And will not be described in detail herein.

The radio frequency amplification circuits shown in fig. 5, 6, 12, and 13 described above output GSM signals using a single antenna by power combining. In the terminal equipment, the radio frequency amplification circuit can also output the GSM signal by using double antennas in an uplink diversity mode. The following describes a dual-antenna output rf amplifying circuit and method.

Fig. 14 is a schematic structural diagram of a GSM radio frequency amplifying circuit according to an embodiment of the present application. As shown in fig. 14, the structure includes: a power divider 1401, a first DC/DC converter 1402, a first Sub3G PA1403, a second Sub3G PA1404, a second DC/DC converter 1405, a second antenna 1406, and a third antenna 1407.

The power divider 1401 is configured to divide a GSM signal into two identical paths of a first GSM signal and a second GSM signal.

The first DC/DC converter 1402 and the second DC/DC converter 1405 are used to convert the power supply voltage to respective target voltages and supply power to the first Sub3G PA1403 and the second Sub3G PA1404, respectively. Each of the first DC/DC converter 1402 and the second DC/DC converter 1405 includes a step-up circuit and a step-down circuit, and can output different target voltages.

The first Sub3G PA1403 and the second Sub3G PA1404 are used to amplify the GSM signal. The first Sub3G PA1403 and the second Sub3G PA1404 may include a plurality of power amplifiers. The first Sub3G PA1403 and the second Sub3G PA1404 may have the same structure or different structures, and this is not limited in this embodiment of the present application.

The second antenna 1406 is used for converting the amplified first GSM signal into an electromagnetic wave with a corresponding wavelength and radiating the electromagnetic wave into the air. One or more antennas may be included in the first antenna 1406. Illustratively, when the second antenna 1406 includes a plurality of antennas, a portion of the antennas may be used to radiate low frequency signals and another portion of the antennas may be used to radiate high frequency signals and intermediate frequency signals.

The third antenna 1407 is used for converting the amplified second GSM signal into an electromagnetic wave of a corresponding wavelength and radiating the electromagnetic wave into the air.

The process of amplifying the GSM signal is described below with reference to fig. 14. Illustratively, the GSM signal is divided into a first GSM signal and a second GSM signal by the power divider 1401, the first GSM signal and the second GSM signal are amplified in the first Sub3G PA1403 and the second Sub3G PA1404, respectively, and the amplified first GSM signal and the amplified second GSM signal are output to the first antenna 1406 and the second antenna 1407, respectively, for radiation.

Fig. 15 is a schematic structural diagram of a specific GSM rf amplifier circuit according to an embodiment of the present application. As shown in fig. 15, includes: a power supply 1501, a radio frequency transmission unit 1502, a baseband processing unit 1503, a first DC/DC converter 1504, a power divider 1505, a second switch 1506, a first switch 1507, a second DC/DC converter 1508, a first Sub3G PA1509, a second Sub3G PA1510, a first filter 1511, a second filter 1512, a third filter 1513, a first antenna switch 1514, a second antenna switch 1515, a second antenna 1516, and a third antenna 1517.

The possible structure and function of each module in fig. 15 can be referred to the related concepts described above and the description of the corresponding module in fig. 6 and 12. Optionally, the radio frequency amplifying circuit shown in fig. 15 may further include a third switch, and the connection manner, structure, and function of the third switch may be as described with reference to the third switch in fig. 13.

During the amplification process of the GSM high frequency signal, the radio frequency transmitting unit 1502 outputs the GSM high frequency signal through the GSM HB port, and the GSM high frequency signal enters the intermediate frequency amplifier in the first Sub3G PA1509 through the second switch 1506 for power amplification. The amplified GSM high frequency signal is filtered by the first filter 1511 to remove the stray signal generated during power amplification, and the first antenna switch 1514 selects a suitable second antenna 1516 to radiate outwards.

The control of each module in the amplification process of the GSM high frequency signal can be explained with reference to the method shown in fig. 9.

During the amplification process of the GSM low frequency signal, the radio frequency transmitting unit 1502 outputs the GSM low frequency signal through the GSM LB port, and the GSM low frequency signal is divided into two paths of signals by the power divider 1505, where the two paths of signals are the first GSM low frequency signal and the second GSM low frequency signal. The first GSM low frequency signal enters a low frequency amplifier in the first Sub3G PA1509 for power amplification. The amplified first GSM low-frequency signal is filtered by the second filter 1512 to remove a stray signal generated during power amplification, and the first antenna switch 1514 selects a suitable second antenna 1516 to radiate outwards.

The second GSM low frequency signal enters the low frequency amplifier in the second Sub3G PA1510 via the first switch 1507 for power amplification. The amplified second GSM low frequency signal is filtered by a third filter 1513 to remove the stray signal generated during power amplification, and is radiated to the outside after selecting a suitable third antenna 1517 through a second antenna switch 1515.

The control of each module in the process of amplifying the GSM low-frequency signal by the circuit diagram shown in fig. 15 is described below with reference to fig. 16.

Fig. 16 is a schematic flowchart of a method for controlling a radio frequency amplifying circuit according to an embodiment of the present disclosure. As shown in fig. 16, the method includes:

s1601, the terminal receives scheduling of the GSM low-frequency signal.

And S1602, the baseband processing unit controls the radio frequency transmitting unit to set an output port of the radio frequency transmitting unit at a port for outputting a GSM high-frequency signal.

S1603, the radio frequency transmitting unit outputs a GSM high-frequency signal.

And S1604, the baseband processing unit judges whether to schedule the high gain mode.

And the baseband processing unit judges whether to schedule the high gain mode according to the scheduling information.

It will be appreciated that the terminal device may need to output a lower power GSM high frequency signal and may also need to output a higher power GSM low frequency signal. When the GSM low frequency signal having a smaller output power is required, the baseband processing unit determines that the scheduling of the high gain mode is not required, and performs S1605, S1606, and S1609. When the GSM low frequency signal with large output power is required, the baseband processing unit determines that the high gain mode needs to be scheduled, and executes S1607-S1609.

S1605, if the high gain mode does not need to be scheduled, the baseband processing unit controls the first Sub3G PA or the second Sub3G PA to be turned on to the low frequency mode, and controls the first DC/DC converter to output the first target voltage, or controls the second DC/DC converter to output the second target voltage.

And S1606, the baseband processing unit controls the first switch, the first antenna switch or the second antenna switch to a preset GSM channel.

And S1607, if the high gain mode needs to be scheduled, the baseband processing unit controls the first Sub3G PA and the second Sub3G PA to be switched on to the low frequency mode, and controls the first DC/DC converter and the second DC/DC converter to output a first target voltage and a second target voltage respectively.

S1608, the baseband processing unit controls the first switch, the first antenna, or the second antenna switch to the preset GSM channel.

And S1609, radiating the GSM low-frequency signal by the antenna.

Therefore, the terminal equipment can select a proper amplification path according to the scheduling requirement of the GSM low-frequency signal, and further reduce unnecessary power consumption.

In summary, in the embodiment of the present application, the uplink diversity mode may also achieve amplification of a GSM signal through the Sub3G PA, meet a power requirement of the GSM signal, reduce usage of the GSM PA, reduce an area of a PCB, and save space. And the direction diagram of the GSM low-frequency signal output by the mode of dual-antenna output in the uplink diversity is different from the direction diagram of the GSM low-frequency signal output by the mode of single-antenna output in the power synthesis, so that the range of the GSM low-frequency signal output by the mode of dual-antenna is wider.

Fig. 17 is a schematic circuit structure diagram for amplifying a GSM signal or a Sub3G signal according to an embodiment of the present application. As shown in fig. 17, includes: the antenna comprises a power supply 1701, a radio frequency transmitting unit 1702, a baseband processing unit 1703, a first DC/DC converter 1704, a power divider 1705, a second switch 1706, a first switch 1707, a second DC/DC converter 1708, a first Sub3G PA1709, a second Sub3G PA1710, a filtering unit 1711, a first filter 1712, a second filter 1713, a third filter 1714, a first antenna switch 1715, a second antenna switch 1716, a second antenna 1717 and a third antenna 1718.

The possible structure and function of each module in fig. 17 can be referred to the related concepts described above and the description of the corresponding module in fig. 6 and 12. Optionally, the radio frequency amplifying circuit shown in fig. 17 may further include a third switch, and the connection manner, structure, and function of the third switch may be as described with reference to the third switch in fig. 13.

The process of amplifying the GSM signal by the rf amplifying circuit shown in fig. 17 can refer to the process of amplifying the GSM signal by the rf amplifying circuit shown in fig. 15. And will not be described in detail herein.

The amplification process of the sub3G signal is described below with reference to fig. 17.

When the terminal device receives the scheduling of the Sub3G high frequency signal, the radio frequency transmitting unit 1702 outputs the Sub3G high frequency signal through the Sub3G high frequency signal port, performs power amplification in the first Sub3G PA1709 or the second Sub3G PA1710 through the Sub3G high frequency signal access port in the first Sub3G PA1709 or the second Sub3G PA1710, and outputs the signal to the filtering unit 1711 to filter the stray signal generated during amplification, and then selects an appropriate channel through the first antenna switch 1715, and radiates the Sub3G high frequency signal at the corresponding second antenna 1717. In the sub3G high-frequency signal amplification process, the control method of each module is similar to that of each module in the GSM signal amplification, and is not described herein again. The amplification principle and the amplification process of the sub3G intermediate frequency signal and the sub3G low frequency signal are similar to the amplification principle and the amplification process of the sub3G high frequency signal, and are not repeated here.

The embodiment of the application further provides a terminal device, wherein the terminal device comprises any one of the radio frequency amplification circuits, and the radio frequency amplification circuit is used for amplifying the GSM signal and the Sub3G signal.

The terminal device may be a mobile phone, a tablet personal computer (tablet personal computer), a laptop computer (laptop computer), a Personal Digital Assistant (PDA), a Mobile Internet Device (MID), a wearable device (wearable device), or the like.

The terminal device provided by the embodiment of the application has the beneficial effects brought by the radio frequency amplification circuit, which are not described herein again.

The above embodiments, structural diagrams or simulation diagrams are only schematic illustrations of the technical solutions of the present application, and the dimensional ratios thereof do not limit the scope of the technical solutions, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the above embodiments should be included in the scope of the technical solutions.

Claims

1. A radio frequency amplification circuit, comprising: the radio frequency amplification device comprises a radio frequency transmitting unit, a first switch, a first amplification unit, a second amplification unit and a power divider;

the radio frequency transmitting unit comprises a first port and a second port, wherein the first port is used for outputting global system for mobile communications (GSM) signals of a first frequency, and the second port is used for outputting Sub3G signals of a frequency band below 3 gigahertz of a second frequency; the first port is connected to the power divider, a first output end of the power divider is connected to the first amplifying unit, a second output end of the power divider is connected to the first input end of the first switch, and the second port is connected to the second input end of the first switch; the output end of the first switch is connected with the second amplifying unit; the power divider is configured to divide the GSM signal of the first frequency into a first signal and a second signal, output the first signal at a first output end of the power divider, and output the second signal at a second output end of the power divider;

the first switch is used for selecting to connect a second output end or the second port of the power divider;

the first amplifying unit is used for amplifying the first signal; the second amplifying unit is used for amplifying the second signal or the Sub3G signal of the second frequency; wherein the first frequency and the second frequency are both low-frequency frequencies lower than 1 GHz;

the radio frequency amplification circuit also comprises a baseband processing unit, wherein the baseband processing unit is used for controlling the radio frequency transmitting unit to output a GSM signal or a Sub3G signal and controlling the selective switching of the first switch, and the first switch is a single-pole double-throw switch;

the baseband processing unit is configured to control the radio frequency transmitting unit to output the GSM signal of the first frequency at the first port, and the baseband processing unit is further configured to control the first switch to selectively connect to a second output end of the power divider, where the second amplifying unit is specifically configured to amplify the GSM signal of the first frequency;

the baseband processing unit is configured to control the radio frequency transmitting unit to output the Sub3G signal of the second frequency at the second port, and further configured to control the first switch to selectively connect to the second port, and the second amplifying unit is configured to amplify the Sub3G signal of the second frequency;

further comprising a third switch;

the radio frequency transmitting unit comprises a fifth port, and the fifth port is used for outputting a Sub3G signal of the second frequency;

two input ends of the third switch are respectively connected to the fifth port and the first output end of the power divider, an output end of the third switch is connected to the first amplifying unit, the third switch is used for selectively connecting the first output end or the fifth port of the power divider, and the third switch is a single-pole double-throw switch;

the radio frequency amplification circuit further includes: a second switch;

the radio frequency transmitting unit further comprises a third port and a fourth port, wherein the third port is used for outputting the GSM signal of a third frequency, and the fourth port is used for outputting the Sub3G signal of a fourth frequency;

the third port is connected with the first input end of the second switch;

the output end of the second switch is connected with the first amplifying unit;

the fourth port is connected with the second input end of the second switch;

the second switch is used for selecting and connecting the third port for outputting the GSM signal of the third frequency or the fourth port for outputting a Sub3G signal of the fourth frequency, and the second switch is a single-pole double-throw switch;

the third frequency is GSM high-frequency, and the fourth frequency is 1.7GHz-2.2GHz;

the radio frequency amplification unit further comprises a sixth port, a seventh port and an eighth port, wherein the sixth port is used for outputting a Sub3G signal of a fifth frequency to the first amplification unit; the seventh port is configured to output a Sub3G signal of a fifth frequency to the second amplifying unit; the eighth port is configured to output a Sub3G signal of a fourth frequency to the second amplifying unit, where the fifth frequency is 2.2GHz-3GHz.

2. The radio frequency amplification circuit of claim 1, further comprising a phase shifter;

the phase shifter is arranged between the first output end of the power divider and the input end of the first amplifying unit; or the phase shifter is arranged between the second output end of the power divider and the input end of the second amplifying unit.

3. The radio frequency amplification circuit of claim 1, further comprising: a first voltage conversion unit and a second voltage conversion unit;

the first voltage conversion unit comprises a first selection switch, a first voltage boosting unit and a first voltage reducing unit, wherein the first selection switch is used for selecting the first voltage boosting unit or the first voltage reducing unit, and the first voltage conversion unit is used for providing corresponding power for the first amplifying unit according to a circuit selected by the first selection switch;

the second voltage conversion unit comprises a second selection switch, a second boosting unit and a second voltage reduction unit, the second selection switch is used for selecting the second boosting unit or the second voltage reduction unit, and the second voltage conversion unit is used for providing corresponding power for the second amplification unit according to a circuit selected by the second selection switch.

4. The radio frequency amplification circuit of claim 3,

the baseband processing unit is further configured to determine a target voltage according to the first frequency, and send the target voltage to the first voltage conversion unit and/or the second voltage conversion unit;

the first voltage conversion unit is specifically configured to control the first selection switch to select the first voltage boosting unit when the target voltage is greater than a threshold voltage; or, when the target voltage is less than or equal to the threshold voltage, controlling the first selection switch to select the first voltage reduction unit;

and/or the second voltage conversion unit is specifically configured to control the second selection switch to select the second voltage boosting unit when the target voltage is greater than the threshold voltage; or, when the target voltage is less than or equal to the threshold voltage, the second selection switch is controlled to select the second voltage reduction unit.

5. The radio frequency amplification circuit of claim 1, further comprising a combiner and a first antenna,

the output end of the first amplifying unit and the output end of the second amplifying unit are both connected with the input end of the combiner, and the output end of the combiner is connected with the first antenna;

the combiner is used for combining the first signal amplified by the first amplifying unit and the second signal amplified by the second amplifying unit into a target signal;

the first antenna is used for transmitting the target signal.

6. The radio frequency amplification circuit of claim 1, further comprising a second antenna and a third antenna;

the second antenna is connected with the output end of the first amplifying unit and is used for transmitting the first signal amplified by the first amplifying unit;

the third antenna is connected with the output end of the second amplifying unit, and the third antenna is used for transmitting the second signal amplified by the second amplifying unit.

7. The radio frequency amplification circuit according to claim 5 or 6, wherein a filter is provided after each of the first amplification unit and the second amplification unit.

8. A radio frequency amplification method applied to the radio frequency amplification circuit according to any one of claims 1 to 7, the method comprising:

a baseband processing unit receives first scheduling information of the GSM signal of the first frequency; the baseband processing unit controls the radio frequency transmitting unit to output the GSM signal of the first frequency at the first port according to the first scheduling information; the baseband processing unit controls the first switch to select and connect with a second output end of the power divider; the power divider divides the GSM signal of the first frequency into the first signal and the second signal; the first amplifying unit amplifies the first signal; the second amplifying unit amplifies the second signal;

or, the baseband processing unit receives second scheduling information of the Sub3G signal of the second frequency; the baseband processing unit controls the radio frequency transmitting unit to output a Sub3G signal of the second frequency at the second port according to the second scheduling information; the baseband processing unit controls the first switch to selectively connect the second port; the radio frequency transmitting unit outputs a Sub3G signal of the second frequency; the second amplification unit amplifies the Sub3G signal of the second frequency;

when the baseband processing unit receives the first scheduling information, the baseband processing unit controls the third switch to select the first output end of the power divider;

or, the baseband processing unit controls the radio frequency transmitting unit to output a Sub3G signal of the second frequency at the fifth port according to the second scheduling information; the baseband processing unit controls the third switch to select the fifth port; the first amplifying unit amplifies the Sub3G signal of the second frequency;

the baseband processing unit receives third scheduling information of the GSM signal of the third frequency; the baseband processing unit controls the radio frequency transmitting unit to output the GSM signal of the third frequency at the third port according to the third scheduling information; the baseband processing unit controls the second switch to selectively connect the third port; the radio frequency transmitting unit outputs the GSM signal of the third frequency; the first amplifying unit amplifies the GSM signal of the third frequency; or, the baseband processing unit receives fourth scheduling information of the Sub3G signal of the fourth frequency; the baseband processing unit controls the radio frequency transmitting unit to output the Sub3G signal of the fourth frequency at the fourth port according to the fourth scheduling information; the baseband processing unit controls the second switch to selectively connect the fourth port; the radio frequency transmitting unit outputs the Sub3G signal of the fourth frequency; the first amplification unit amplifies the Sub3G signal of the fourth frequency.

9. The method of claim 8, further comprising:

when the GSM signal of the first frequency is a low-frequency GSM signal, the baseband processing unit controls both the first amplifying unit and the second amplifying unit to be switched on to a low-frequency mode;

and when the GSM signal of the third frequency is a high-frequency GSM signal, the baseband processing unit controls the first amplifying unit to be switched on to an intermediate frequency mode.

10. The method of claim 8, further comprising:

the radio frequency amplifying circuit further comprises a first voltage conversion unit and a second voltage conversion unit; the first voltage conversion unit comprises a first selection switch, a first boosting unit and a first voltage reduction unit, the first selection switch is used for selecting the first boosting unit or the first voltage reduction unit, and the first voltage conversion unit is used for providing corresponding power for the first amplification unit according to a circuit selected by the first selection switch;

the second voltage conversion unit comprises a second selection switch, a second voltage boosting unit and a second voltage reducing unit, the second selection switch is used for selecting the second voltage boosting unit or the second voltage reducing unit, and the second voltage conversion unit is used for providing corresponding power for the second amplifying unit according to a circuit selected by the second selection switch;

the baseband processing unit determines a target voltage according to the first frequency and sends the target voltage to the first voltage conversion unit and/or the second voltage conversion unit;

the first voltage conversion unit controls the first selection switch to select the first boosting unit when the target voltage is greater than a threshold voltage; or when the target voltage is less than or equal to the threshold voltage, controlling the first selection switch to select the first voltage reduction unit;

and/or the second voltage conversion unit controls the second selection switch to select the second boosting unit when the target voltage is greater than the threshold voltage; or, when the target voltage is less than or equal to the threshold voltage, the second selection switch is controlled to select the second voltage reduction unit.

11. The method of claim 8, further comprising:

the radio frequency amplification circuit also comprises a combiner and a first antenna;

the first antenna is used for transmitting the target signal;

the combiner combines the first signal amplified by the first amplifying unit and the second signal amplified by the second amplifying unit into a path of target signal;

the baseband processing unit controls the first antenna to be switched to a preset channel of the GSM signal;

the first antenna transmits the target signal.

12. The method of claim 8, further comprising:

the radio frequency amplification circuit further comprises a second antenna and a third antenna;

the baseband processing unit controls the second antenna and/or the third antenna to switch to a preset channel of the GSM signal; the second antenna transmits the first signal amplified by the first amplifying unit;

and the third antenna transmits the second signal amplified by the second amplifying unit.

13. A terminal device, characterized in that it comprises a radio frequency amplification circuit according to any one of claims 1 to 7 for amplifying GSM signals and Sub3G signals.