CN216721326U - Radio frequency front end module and radio frequency system - Google Patents

Radio frequency front end module and radio frequency system Download PDF

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Publication number
CN216721326U
CN216721326U CN202220241854.9U CN202220241854U CN216721326U CN 216721326 U CN216721326 U CN 216721326U CN 202220241854 U CN202220241854 U CN 202220241854U CN 216721326 U CN216721326 U CN 216721326U
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module
power supply
network
frequency signal
processing
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陈锋
仝林
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Priority to PCT/CN2022/139655 priority patent/WO2023142766A1/en
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits

Abstract

The application relates to a radio frequency front-end module and a radio frequency system, wherein the radio frequency front-end module comprises a first power supply module, a second power supply module, a first radio frequency processing circuit and a second radio frequency processing circuit, wherein the first radio frequency processing circuit is connected with the first power supply module and is used for supporting the emission processing of a first high-frequency signal and a second high-frequency signal of a received first network under the action of a first power supply voltage; the second radio frequency processing circuit is connected with the second power supply module and used for supporting the emission processing of the received target signal of the second network under the action of the second power supply voltage; the first power supply voltage is greater than the second power supply voltage, so that the dual-transmission function of the 4G LTE signal and the 5G NR signal can be realized, the integration level of the radio frequency front-end module can be improved, and the cost is reduced.

Description

Radio frequency front end module and radio frequency system
Technical Field
The present application relates to the field of antenna technologies, and in particular, to a radio frequency front end module and a radio frequency system.
Background
With the development and progress of the technology, mobile communication technology is gradually beginning to be applied to radio frequency systems, such as mobile phones and the like. For a radio frequency system supporting a 5G communication technology, a dual connectivity mode of 4G signals and 5G signals is generally adopted in a Non-independent Networking (NSA) mode. Generally, in order to improve the communication performance in the 4G and 5G dual-connection modes, a power supply module with a built-in booster circuit is used to supply power to the radio frequency circuits supporting the amplification processing of the 4G signal and the 5G signal, respectively, which is high in cost.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a radio frequency front end module which can reduce cost.
The embodiment of the application provides a radio frequency front end module, includes:
the first power supply module is used for providing a first power supply voltage;
the second power supply module is used for providing a second power supply voltage;
the first radio frequency processing circuit is connected with the first power supply module and used for supporting the emission processing of the received first high-frequency signal and the second high-frequency signal of the first network under the action of the first power supply voltage;
the second radio frequency processing circuit is connected with the second power supply module and used for supporting the emission processing of the received target signal of the second network under the action of the second power supply voltage; wherein the first supply voltage is greater than the second supply voltage.
An embodiment of the present application provides a radio frequency system, including:
a radio frequency transceiver; and
the rf front-end module as described above, wherein the first rf processing circuit and the second rf processing circuit are respectively connected to the rf transceiver.
In the radio frequency front end module and the radio frequency system, the first power supply module and the second power supply module are respectively arranged to supply power to the first radio frequency processing circuit and the second radio frequency processing circuit in a one-to-one correspondence manner, so that the first radio frequency processing circuit and the second radio frequency processing circuit can work simultaneously, and the radio frequency front end module can simultaneously output two paths of signals with different networks to support the amplification of 4G LTE signals and 5G NR signals and further realize the double connection of the 4G LTE signals and the 5G NR signals, wherein the second radio frequency processing circuit does not need to support the transmission processing of radio frequency signals of a first network, such as 5G NR frequency band signals, therefore, in the embodiment of the application, a booster circuit is not arranged in the second power supply module, and a special design is not needed to be carried out on power amplification units in the first radio frequency processing circuit and the second radio frequency processing circuit, the radio frequency front end module provided by the embodiment of the application can reduce the cost.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a diagram illustrating one embodiment of a frame of an RF front-end module;
FIG. 2 is a second schematic diagram of a frame of the RF front-end module according to an embodiment;
FIG. 3 is a third schematic diagram of a frame of an RF front-end module in an embodiment;
FIG. 4 is a fourth schematic diagram of a frame of the RF front-end module in one embodiment;
FIG. 5 is a fifth schematic diagram of a frame of the RF front-end module in one embodiment;
FIG. 6 is a sixth schematic diagram of a frame of an RF front-end module in one embodiment;
FIG. 7 is a seventh schematic diagram of a frame of an RF front-end module in one embodiment;
FIG. 8 is an eighth schematic diagram of a frame of an RF front-end module in one embodiment;
fig. 9 is a schematic structural diagram of a communication device provided with a radio frequency system in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first antenna may be referred to as a second antenna, and similarly, a second antenna may be referred to as a first antenna, without departing from the scope of the present application. The first antenna and the second antenna are both antennas, but they are not the same antenna.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. In the description of the present application, "a number" means at least one, such as one, two, etc., unless specifically limited otherwise.
The radio frequency front end module related to the embodiment of the present application may be applied to a radio frequency system having a wireless communication function, and the radio frequency system may be applied to a communication device, which may be a handheld device, a vehicle-mounted device, a wearable device, a computing device or other processing device connected to a wireless modem, and various forms of User Equipment (UE) (e.g., a Mobile phone), a Mobile Station (MS), and the like. For convenience of description, the above-mentioned devices are collectively referred to as a communication device.
The embodiment of the application provides a radio frequency front end module. The radio frequency front-end module provided in the embodiment of the present application is configured to support a non-independent networking operating mode of 5G NR and a Long Term Evolution (LTE) operating mode of 4G LTE. That is, the radio frequency front-end module provided in the embodiment of the present application may operate in an dependent networking NSA operating mode and an LTE operating mode (or referred to as an LTE only operating mode).
Wherein the non-independent networking working mode comprises any one of EN-DC, NE-DC and NGEN-DC frameworks. In the embodiment of the present application, a non-independent networking operation mode is taken as an EN-DC framework for example. E is Evolved-Universal Mobile Telecommunications System Terrestrial Radio Access (E-UTRA), which represents 4G wireless Access of the Mobile terminal; n is a New Radio (NR) and represents the 5G wireless connection of the mobile terminal; DC is Dual Connectivity, representing Dual Connectivity of 4G and 5G. In the EN-DC mode, the radio frequency front-end module can realize double connection with the 4G base station and the 5G base station simultaneously on the basis of the 4G core network.
In the related art, in order to meet the configuration requirement of the EN-DC combination between different frequency bands of the 4G LTE signal and the 5G NR signal, two power supply modules including boost voltage boost circuits are used to supply power to different radio frequency processing circuits, which is high in cost. Or, if the two power supply modules both use the radio frequency front end module that does not need the boost circuit to respectively supply power to different radio frequency processing circuits, the power amplification unit in the radio frequency processing circuit must be specially designed, for example, the power amplification unit performs power synthesis processing on the radio frequency signals of each frequency band in a power synthesis manner, so that the voltage value of each power supply voltage can be reduced on the premise of satisfying the output power level, but the complexity and the cost of the power amplification unit can be increased.
As shown in fig. 1, in one embodiment, a radio frequency front end module 10 provided in the present application includes: a first power supply module 110, a second power supply module 120, a first rf processing circuit 130, and a second rf processing circuit 140.
The first power supply module 110 is configured to provide a first power supply voltage, and the second power supply module 120 is configured to provide a second power supply voltage, where the first power supply voltage is greater than the second power supply voltage. Specifically, each of the first Power supply module 110 and the second Power supply module 120 may include a Power Management IC (PMIC).
And a first rf processing circuit 130, connected to the first power supply module 110, and configured to support a transmission process of the received first high-frequency signal and the second high-frequency signal of the first network under the action of the first power supply voltage. And a second rf processing circuit 140, connected to the second power supply module 120, and configured to support transmission processing of the received target signal of the second network under the action of the second power supply voltage. The first high frequency signal and the second high frequency signal of the first network received by the first rf processing circuit 130 and the target signal of the second network received by the second rf processing circuit 140 are provided by the rf transceiver 20, respectively. The signals processed by the first rf processing circuit 130 and the second rf processing circuit 140 may be radiated to the free space through the antenna. The first power supply module 110 can supply power to the first rf processing circuit 130. The second power module 120 may provide power to the second rf processing circuit 140. Each radio frequency processing circuit can perform power amplification, filtering and other processing on each received radio frequency signal under the action of the power supply voltage so as to realize the transmission processing of the received radio frequency signal.
In this embodiment, the first network may be a 5G network, where a Radio frequency signal of the first network may be referred to as a New Radio (NR) signal, that is, a 5G NR signal. The second network may be a 4G network, wherein the radio frequency signal of the second network may be referred to as a Long Term Evolution (LTE) signal, that is, a 4G LTE signal. The frequency division of the low frequency signal, the intermediate frequency signal, the first high frequency signal (also referred to as a high frequency signal) and the second high frequency signal (also referred to as a uhf signal) is shown in table 1.
TABLE 1 shows a frequency band division table for a low frequency signal, an intermediate frequency signal, a first high frequency signal and a second high frequency signal
Figure BDA0003494439500000061
It should be noted that, in the 5G network, only the identifier before the sequence number is changed along with the frequency band used by 4G. In addition, some ultrahigh frequency bands which are not available in the 4G network, such as N77, N78, N79 and the like, are added to the 5G network.
In this embodiment of the application, the first power supply module 110 and the second power supply module 120 are respectively arranged to supply power to the first rf processing circuit 130 and the second rf processing circuit 140 in a one-to-one correspondence manner, so that the first rf processing circuit 130 and the second rf processing circuit 140 can work simultaneously, and the rf front-end module 10 can simultaneously output two paths of signals with different networks, so as to support amplification of a 4G LTE signal and a 5G NR signal, and further realize dual connection of the 4G LTE signal and the 5G NR signal. The first path of signals is a signal amplified by the first rf processing circuit 130, and may be, for example, a first high frequency signal and a second high frequency signal of a first network. The second path of signals is signals processed by the second rf processing circuit 140, and may be target signals of the second network, for example, where the target signals may be at least one of intermediate frequency signals of the second network and low frequency signals of the second network. Therefore, the combination of the first path signal and the second path signal can satisfy the configuration requirements of different EN-DC combinations between the 4G LTE signal and the 5G NR signal, as shown in table 2.
TABLE 2 TABLE FOR DISPOSITIONS OF DIFFERENT EN-DC COMBINATIONS BETWEEN 4G LTE SIGNALS AND 5G NR SIGNALS
Figure BDA0003494439500000062
Figure BDA0003494439500000071
The radio frequency front end module 10 may be configured to support a non-independent networking mode of operation in which first and second high frequency signals (e.g., N41, N78, etc. for 5G NR) of a first network are doubly connected with target signals (e.g., low frequency signals or/and intermediate frequency signals for 4G LTE signals) of a second network.
The rf front-end module 10 of the embodiment of the application includes a first power supply module 110, a second power supply module 120, a first rf processing circuit 130, and a second rf processing circuit 140, where the first power supply module 110 and the second power supply module 120 may respectively supply power to the first rf processing circuit 130 and the second rf processing circuit 140 in a one-to-one correspondence manner, so that the first rf processing circuit 130 may support transmission processing of a first high-frequency signal and a second high-frequency signal of a received first network under the action of a first power supply voltage, and the second rf processing circuit 140 may support transmission processing of a target signal of a received second network under the action of a second power supply voltage, where the frequency range of the target signal is lower than the frequency ranges of the first high-frequency signal and the second high-frequency signal, and further may support simultaneous amplification of a 4G LTE signal and a 5G NR signal, and further may implement dual transmission functions of the 4G LTE signal and the 5G NR signal, and the method does not conflict with each other, and can meet the configuration requirement of EN-DC combination between different frequency bands of 4G LTE signals and 5G NR signals. In this embodiment, the second rf processing circuit 140 does not need to support the transmission processing of the rf signal of the first network, for example, the 5G NR frequency band signal, so that in this embodiment, a boost circuit may be avoided being built in the second power supply module 120, and a special design of the power amplification units in the first rf processing circuit 130 and the second rf processing circuit 140 is also not needed, and the rf front-end module 10 provided in this embodiment may reduce the cost.
In one embodiment, the first power supply module 110 provides the first power supply voltage in an Envelope Tracking (ET) power supply mode. The first power module 110 may include an RF PMIC #1, the RF PMIC #1 includes a boost circuit therein, and an output voltage of the RF PMIC #1 is greater than an input voltage of the RF PMIC # 1. The second Power supply module 120 Average Power Tracking (APT) Power mode provides the second Power supply voltage. The second power module 120 may include an RF PMIC #2, the RF PMIC #2 does not include a boost circuit, and an output voltage of the RF PMIC #2 is less than or equal to an input voltage of the RF PMIC # 2. Meanwhile, the output voltage of the RF PMIC #1 is greater than the output voltage of the RF PMIC # 2.
In this embodiment, the second rf processing circuit 140 does not need to support the transmission processing of the rf signal of the first network, and the rf performance of the second network signal can be satisfied by supplying power (without boost function) through a normal average power tracking power supply mode. The first rf processing circuit 130 uses the envelope tracking power supply module to supply power (with boost function), so as to ensure the rf performance of the first network signal. In this way, it is avoided that a boost circuit is built in the second power supply module 120, and it is not necessary to specially design the power amplification units in the first rf processing circuit 130 and the second rf processing circuit 140, and the rf front-end module 10 provided in the embodiment of the present application can reduce the cost.
As shown in fig. 2, in one embodiment, the first rf processing circuit 130 includes a first rf processing module 131 and a second rf processing module 133. The first rf processing module 131 is configured with a first power supply port VCC1, the first rf processing module 131 includes a first transmitting unit 1311, the first transmitting unit 1311 is connected to the first power supply port VCC1, and the first transmitting unit 1311 is configured to support power amplification processing on the first high-frequency signal under the action of the first power supply voltage, and output the first high-frequency signal after the power amplification processing to a first antenna ANT 1. The first high-frequency signal may include high-frequency band signals such as N41, N40, and the like.
Optionally, the first rf processing module 131 may be configured to support a receiving process of the first high frequency signal in addition to the transmitting process of the first high frequency signal. That is, the first rf processing module 131 may be a transceiver circuit for supporting the first high frequency signal.
In one embodiment, the first rf processing module 131 may further support a transmission process of the intermediate frequency signal of the first network. In particular, the first radio frequency processing module 131 is further configured with a third power supply port VCC 3. The first rf processing module 131 includes a second transmitting unit 1313. The second transmitting unit 1313 is connected to the third power supply port VCC3, and the second transmitting unit 1313 is further configured to support power amplification processing on the intermediate frequency signal of the first network, and output the power-amplified intermediate frequency signal of the first network to a first antenna ANT 1. The intermediate frequency signal of the first network may include N1, N3, N2, N7, N34, N39, and other frequency bands. Optionally, the first rf processing module 131 may be configured to support a transmission process of the intermediate frequency signal of the first network, and may also be configured to support a reception process of the intermediate frequency signal of the first network. That is, the first rf processing module 131 may be a transceiver circuit for supporting an intermediate frequency signal to the first network.
In the present embodiment, the first transmitting unit 1311 and the second transmitting unit 1313 are integrated in the first rf processing module 131. Specifically, the first rf processing module 131 may also be a Power amplifier module (PA Mid) integrated with a duplexer, or a PA Mid with a built-in low noise amplifier, that is, an L-PA Mid. Each port configured on the first rf processing module 131 can be understood as a rf pin of a PA Mid device or an L-PA Mid device.
For convenience of illustration, the first rf processing module 131 is a phase 7MHB L-PAMID device. The first rf processing module 131 integrates a medium-high frequency power amplifier MHB PA, a medium-high frequency low noise amplifier MHB LNA, a duplexer, a filter, a coupler, and a switch. The first rf processing module 131 can implement transceiving of WCDMA and 4G LTE signals of the mid-high band 3G cellular network and frequency recombination NR band, for example, receiving and transmitting processing of the N41 frequency band. In the embodiment of the present application, the first rf processing module 131 can implement the receiving and transmitting functions of N41, so that it is avoided that a power amplifier switch module (LNA-PA ASM module with integrated filter, abbreviated as LPAF) integrated with a filter and a low noise amplifier is used to implement the receiving and transmitting processes on the N41 frequency band in the related art, and the cost can be saved, for example, about 1.2 dollars can be saved. In addition, the first transmitting unit 1311 and the second transmitting unit 1313 may be integrated in the first rf processing module 131, so as to further improve the integration level of the rf front-end module 10, which is beneficial to the miniaturization design of the rf front-end module 10.
Referring to fig. 2, in an embodiment, a second rf processing module 133 is configured with a second power supply port VCC2, the second power supply port VCC2 is connected to the first power supply module 110, and the second rf processing module 133 is configured to support power amplification and filtering processing on the second high-frequency signal, and output the filtered second high-frequency signal to a second antenna ANT 2.
Alternatively, the second rf processing module 133 may support a receiving process of the second high frequency signal in addition to the transmitting process of the second high frequency signal. For convenience of explanation, the second high frequency signal is an N78 frequency band signal. The second rf processing module 133 may be a transceiver circuit for supporting the N78 frequency band signal. Specifically, the second rf processing module 133 may be an N78 LPAF device, in which a power amplifier, a filter, a low noise amplifier, a coupler and a switch, which may be used to support the N78 signal, are integrated to receive and amplify the N78 band signal. Each port configured on the second rf processing module 133 may be understood as an rf pin of the LPAF.
In this embodiment, the second rf processing module 133 adopts an independent integrated device, for example, an LPAF device, which can further improve the integration level of the rf front-end module 10, and is beneficial to the miniaturization design of the rf front-end module 10.
As shown in fig. 3, in one embodiment, the second rf processing circuit 140 includes: the first transmitting module 141 is connected to the second power supply module 120, and the first transmitting module 141 is configured to support a transmission process of a target signal of the second network under the action of the second power supply voltage, and output the target signal to a third antenna ANT 3. The target signal of the second network may include a low-frequency signal of the second network, for example, a band signal of B5, B8, etc. Alternatively, the target signal of the second network may comprise an intermediate frequency signal of the second network, for example, a band signal of B34, B39, etc. Alternatively, the target signal of the second network may include a low frequency signal of the second network and an intermediate frequency signal of the second network.
As shown in fig. 4, for convenience of description, the target signal includes an intermediate frequency signal and a low frequency signal. In one embodiment, the first transmitting module 141 is configured with a fourth power port VCC4 and a fifth power port VCC5, wherein the first transmitting module 141 includes a third transmitting unit 1411, a fourth transmitting unit 1413. The third transmitting unit 1411 is connected to the second power supply module 120 through the fourth power supply port VCC4, and is configured to support a transmission process of a low frequency signal of the second network. The fourth transmitting unit 1413 is connected to the second power supply module 120 through the fifth power supply port VCC5, and is configured to support a transmission process of the intermediate frequency signal of the second network.
The rf front end module 10 further includes: a second transmitting module 150 respectively connected to the second power supply module 120, the third transmitting unit 1411, the fourth transmitting unit 1413, and a third antenna ANT 3. The second transmitting module 150 is configured to support a transmission process on a radio frequency signal of a third network, and is configured to select a radio frequency path through which an intermediate frequency signal of the second network, a low frequency signal of the second network, and a radio frequency signal of the third network are transmitted to the third antenna ANT 3.
As shown in fig. 5, the second transmitting module 150 may include a first amplifying unit 151, a second amplifying unit 153, and a first switching unit 155. The first amplifying unit 151 is configured to support power amplification processing of a low-frequency signal of the third network under the action of the second power supply voltage, and the second amplifying unit 153 is configured to support power amplification processing of an intermediate-frequency signal of the third network. The third network may be a 2G network, such as Global System for Mobile Communications (GSM). The low-frequency signal of the third network may be a low-frequency signal of a 2G network, and may at least include frequency band signals of GSM850, GSM900, and the like. The intermediate frequency signal of the third network may be a 2G high frequency signal, and for example, may include at least frequency band signals of GSM1800, GSM1900, and the like.
The first switch unit 155 is a multi-channel selection switch, wherein a plurality of first terminals of the first switch unit 155 are respectively connected to the first amplification unit 151, the second amplification unit 153, the third transmission unit 1411, and the fourth transmission unit 1413, and a second terminal of the first switch unit 155 is connected to the third antenna ANT 3. The first switch unit 155 may selectively turn on radio frequency paths between the first amplifying unit 151, the second amplifying unit 153, the third transmitting unit 1411, and the fourth transmitting unit 1413 and the third antenna ANT3, and further may select an intermediate frequency signal of the second network, a low frequency signal of the second network, and a radio frequency signal of the third network to be transmitted to a radio frequency path of the third antenna ANT 3.
In the embodiment of the present application, the second transmitting Module 150 may be a Transmitter Module (TxM). The transmitting module integrates a power amplifier supporting low-frequency and high-frequency GSM, a multi-channel selection switch xPyT and a coupler, and can realize processing such as amplification output of a third network radio-frequency signal and transmission combination of other frequency band signals. By integrating the first amplifying unit 151, the second amplifying unit 153 and the first switch unit 155 in the transmitter module, the integration level of the rf front-end module 10 can be further improved, which is beneficial to the miniaturization design of the rf front-end module 10.
As shown in fig. 6, in one embodiment, the first transmitting module 141 further includes fifth transmitting units 1415, which are respectively connected to the fifth power supply ports VCC5 and are used for supporting a transmitting process of the high-frequency signals of the second network. The fifth transmitting unit 1415 may be connected to the other first end of the first switching unit 155 in the second transmitting module 150, so that the first switching unit 155 may also select a radio frequency path for transmitting the high frequency signal of the second network to the third antenna ANT 3.
The first transmitting module 141 may be a Multi-band Multi-mode power amplifier (MMPA) with a plurality of amplifying units built therein. In the embodiment of the present application, the first transmitting module 141 is taken as an example of a phase2MMPA device for explanation. Specifically, the first transmitting module 141 integrates a power amplifier for supporting low frequency, intermediate frequency, and high frequency signals, and can implement power amplification processing for amplifying WCDMA signals and LTE signals in low frequency, intermediate frequency, and high frequency bands. When the radio frequency front-end module 10 needs to work in the endec, the radio frequency front-end module can also be used for supporting power amplification processing of the low-frequency and intermediate-frequency anchor frequency bands of the 4G LTE signals, so as to realize transmission processing of the low-frequency and intermediate-frequency anchor frequency bands of the 4G LTE signals.
In the embodiment of the present application, the third transmitting unit 1411, the fourth transmitting unit 1413, and the fifth transmitting unit 1415 may be integrated in the first transmitting module 141, so that the integration level of the rf front-end module 10 may be further improved, which is beneficial to the miniaturization design of the rf front-end module 10. In addition, the rf front-end module 10 can operate in an endec (e.g., (L/MB + N41, L/MB + N78) operating mode, and can support the transmission processing of the N41 band signal by the first rf processing module 131, e.g., Phase 7PAMID, so as to avoid using the external N41 LPAF device which is expensive and has a supply risk in the related art, and reduce the cost, e.g., 1.2 america, where the 4G LTE band is implemented by the third transmitting module 142 (e.g., Phase 2MMPA), and the third transmitting module 142 does not need to support the transmission processing of the 5G NR band, and only needs the ordinary second power supply module 120 (without boost function) to supply power thereto, so as to satisfy the 3G/4G rf performance and reduce the cost, the rf front-end module 10 provided in this embodiment of the present application, on the premise of realizing the same function, the cost can be saved by about 2.5 dollars.
With continued reference to fig. 5, in one embodiment, the rf front-end module 10 further includes a first receiving module 160 connected to the first switch unit 155 of the second transmitting module 150. The first receiving module 160 may be configured to support receiving processing of low, medium, and high frequency band signals of the first network and the second network, and may also be configured to support receiving processing of a third network signal. Specifically, the first receiving module 160 may specifically include a plurality of low noise amplifiers, filters, duplexers, switches, and the like for supporting different frequency bands. For example, the first receiving Module 160 may be a Low Noise Amplifier Module (LFEM), a Diversity receiving Module (Diversity Receive Module with Antenna Switch Module and filter and SAW, DFEM), a Multi-band Low Noise Amplifier (MLNA), and the like. In the embodiment of the present application, the specific composition of the first receiving module 160 is not further limited.
As shown in fig. 6, in one embodiment, the second rf processing circuit 140 includes: a third transmitting module 142 and a fourth transmitting module 143. The third transmitting module 142 is configured with a sixth power supply port VCC6 for connecting with the second power supply module 120, and the second transmitting module 150 is configured to support a transmission process of the intermediate frequency signal of the second network under the action of the second power supply voltage, and output the intermediate frequency signal of the second network to a fourth antenna ANT 4. A fourth transmitting module 143 configured with a seventh power supply port VCC7 for connecting with the second power supply module 120, where the fourth transmitting module 143 is configured to support a transmission process of a low-frequency signal of the second network under the action of the second power supply voltage, and output the low-frequency signal of the second network to a fifth antenna ANT 5.
In this embodiment, different from the foregoing embodiment, the transmitting module supporting the transmission processing of the intermediate frequency signal of the second network and the transmitting module for supporting the transmission processing of the low frequency signal of the second network are two independent modules. That is, when the rf front-end module 10 operates in the endec, the transmission processing of the intermediate frequency anchor band in the 4G LTE is supported by the third transmitting module 142, and the transmission processing of the low frequency anchor band in the 4G LTE is supported by the fourth transmitting module 143. In addition, the power supply voltages of the third transmitting module 142 and the fourth transmitting module 143 are supported by the second power supply module 120 without a boost circuit, so that the cost of the rf front-end module 10 can be reduced.
In one embodiment, the third transmitting module 142 is further configured to support a transmitting process of the low frequency signal and the high frequency signal of the second network, and select and output any frequency band signal of the low frequency signal, the intermediate frequency signal, and the high frequency signal of the second network to the fourth antenna ANT 4. Specifically, the third transmitting module 142 may be an MMPA device. In the embodiment of the present application, the third transmitting module 142 is taken as an example of a phase2MMPA device for explanation. Specifically, the third transmitting module 142 integrates a power amplifier for supporting low-frequency, intermediate-frequency and high-frequency signals, and can implement power amplification processing for amplifying WCDMA signals and LTE signals in low-frequency, intermediate-frequency and high-frequency bands. When the radio frequency front-end module 10 needs to operate in the endec, the radio frequency front-end module can also be used for supporting power amplification processing of the intermediate frequency anchor point frequency band of the 4G LTE signals, so as to achieve transmission processing of the intermediate frequency anchor point frequency band of the 4G LTE signals.
As shown in fig. 7, in one embodiment, the fourth transmitting module 143 is further configured to support a transmitting process of a radio frequency signal of a third network, and select to output any frequency band signal of a low frequency signal of the second network and the radio frequency signal of the third network to the fifth antenna ANT 5. In particular, the fourth transmitting module 143 comprises a third amplifying unit 1431, a fourth amplifying unit 1432 and a fifth amplifying unit 1433 and a second switching unit 1434, which are respectively connected to the seventh power supply port VCC 7. The third amplifying unit 1431 is configured to support a transmission process of a low-frequency signal of the second network under the action of the second power supply voltage, where the low-frequency signal of the second network may include, but is not limited to, B5 and B8 frequency band signals. The fourth amplifying unit 1432 and the fifth amplifying unit 1433 can refer to the first amplifying unit 151 and the second amplifying unit 153 in the foregoing embodiments, and a detailed description thereof is omitted here. The second switch unit 1434 may be a multi-channel selection switch, wherein a plurality of first terminals of the second switch unit 1434 are respectively connected to the third amplification unit 1431, the fourth amplification unit 1432 and the fifth amplification unit 1433, and a second terminal of the second switch unit 1434 is connected to the fifth antenna ANT5 through an antenna port of the fourth transmitting module 143, so as to select and output any frequency band signal of the low frequency signal of the second network and the radio frequency signal of the third network to the fifth antenna ANT 5.
The fourth transmitting module 143 may be a phase 7LB PAMID device, and the fourth transmitting module 143 integrates a power amplifier for supporting a 4G LTE low-frequency signal, a power amplifier for supporting a GSM low-frequency signal, and an amplifier, a duplexer, a coupler, and a second switch unit 1434 for supporting power transmission of a GSM high-frequency signal, so as to implement transmission of a radio-frequency signal of the third network, such as a GSM low-frequency signal and a high-frequency signal, and support transmission processing of a low-frequency WCDMA signal and a 4G LTE signal, and simultaneously, when the radio-frequency front-end module 10 is in the endec mode, support transmission processing of a low-frequency anchor frequency band of the 4G LTE signal.
In the embodiment of the present application, the rf front-end module 10 can operate in an endec (e.g., (L/MB + N41, L/MB + N78) operating mode, and can support the transmission processing of the signal of the N41 frequency band by the first rf processing module 131, e.g., Phase 7PAMID, so as to avoid using the plug-in N41 lpaf which is costly and has a supply risk and is adopted in the related art, in which the 4G LTE anchor frequency band is implemented by the third transmitting module 142 (e.g., Phase 2MMPA) and the fourth transmitting module 143 (e.g., Phase 7LB PAMID), in this embodiment, the third transmitting module 142 and the fourth transmitting module 143 do not need to support the transmission processing of the 5G NR frequency band, and only need the ordinary second power supply module 120 (without boost function) to supply power to them, so as to satisfy the 3G/4G rf performance, the cost can be reduced, for example, 1.3 dollars, and in addition, the rf front-end module 10 provided in the embodiment of the present application can reduce the cost by about 1.7 dollars on the premise of implementing the same function.
As shown in fig. 8, in one embodiment, the rf front-end module 10 further includes a second receiving module 170 and a switch module 180. The second receiving module 170 may be configured to support receiving processing of low, medium, and high frequency band signals of the first network and the second network, and may also be configured to support receiving processing of a third network signal. A plurality of first terminals of the switch module 180 are respectively connected to the second receiving module 170, and a second terminal of the switch module 180 is connected to the fifth antenna ANT 5. The switch module 180 is used for selectively conducting a receiving path of any frequency band signal. Optionally, the switch module 180 may also be connected to the third transmitting module 142 for selectively turning on a transmitting path or a receiving path of the rf signal. Any frequency band signal may be any frequency band of low, medium and high frequency band signals of the first network and the second network, or may be a low frequency signal or a high frequency signal of the third network. Specifically, the second receiving module 170 may specifically include a plurality of low noise amplifiers, filters, duplexers, switches, and the like for supporting different frequency bands. For example, the first receiving Module 160 may be a Low Noise Amplifier Module (LFEM), a Diversity receiving Module (Diversity Receive Module with Antenna Switch Module and filter and SAW, DFEM), a Multi-band Low Noise Amplifier (MLNA), and the like. In the embodiment of the present application, the specific composition of the second receiving module 170 is not further limited.
As shown in fig. 9, further illustrated by way of example as an rf system implemented in the handset 10, in particular, as shown in fig. 9, the handset may include a memory 21 (which optionally includes one or more computer-readable storage media), a processing circuit 22, a peripheral interface 23, an rf system 24, and an input/output (I/O) subsystem 26. These components optionally communicate via one or more communication buses or signal lines 29. Those skilled in the art will appreciate that the handset shown in fig. 9 is not intended to be limiting and may include more or fewer components than those shown, or some of the components may be combined, or a different arrangement of components. The various components shown in fig. 9 are implemented in hardware, software, or a combination of both hardware and software, including one or more signal processing and/or application specific integrated circuits.
The memory 21 optionally includes high-speed random access memory, and also optionally includes non-volatile memory, such as one or more magnetic disk storage devices, flash memory devices, or other non-volatile solid-state memory devices. Illustratively, the software components stored in memory 21 include an operating system 211, a communication module (or set of instructions) 212, a Global Positioning System (GPS) module (or set of instructions) 213, and the like.
Processing circuitry 22 and other control circuitry, such as control circuitry in radio frequency system 24, may be used to control the operation of handset 10. The processing circuit 22 may include one or more microprocessors, microcontrollers, digital signal processors, baseband processors, power management units, audio codec chips, application specific integrated circuits, and the like.
The processing circuit 22 may be configured to implement a control algorithm that controls the use of the antenna in the handset 10. The processing circuitry 22 may also issue control commands or the like for controlling switches in the radio frequency system 24.
The I/O subsystem 26 couples input/output peripheral devices on the handset 10, such as a keypad and other input control devices, to the peripheral interface 23. The I/O subsystem 26 optionally includes a touch screen, buttons, tone generators, accelerometers (motion sensors), ambient and other sensors, light emitting diodes and other status indicators, data ports, and the like. Illustratively, a user may control the operation of the handset 10 by supplying commands through the I/O subsystem 26, and may receive status information and other output from the handset 10 using the output resources of the I/O subsystem 26. For example, a user pressing button 261 may turn the phone on or off.
The rf system 24 may be the rf front-end module 10 in any of the foregoing embodiments, wherein the rf system 24 may also be used for processing rf signals of a plurality of different frequency bands. Such as satellite positioning radio frequency circuitry for receiving satellite positioning signals at 1575MHz, WiFi and bluetooth transceiver radio frequency circuitry for handling the 2.4GHz and 5GHz bands of IEEE802.11 communications, cellular telephone transceiver radio frequency circuitry for handling wireless communications in cellular telephone bands such as 850MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz bands, and Sub-6G bands. The Sub-6G frequency band may specifically include a 2.496GHz-6GHz frequency band and a 3.3GHz-6GHz frequency band.
Any reference to memory, storage, database, or other medium used herein may include non-volatile and/or volatile memory. Non-volatile memory can include read-only memory (ROM), Programmable ROM (PROM), Electrically Programmable ROM (EPROM), Electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM), which acts as external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), Enhanced SDRAM (ESDRAM), synchronous Link (Synchlink) DRAM (SLDRAM), Rambus (Rambus) direct RAM (RDRAM), direct bused dynamic RAM (DRDRAM), and bused dynamic RAM (RDRAM).
The above examples only express several embodiments of the present application, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent application shall be subject to the appended claims.

Claims (11)

1. A radio frequency front end module, comprising:
the first power supply module is used for providing a first power supply voltage;
the second power supply module is used for providing a second power supply voltage;
the first radio frequency processing circuit is connected with the first power supply module and used for supporting the emission processing of the received first high-frequency signal and the second high-frequency signal of the first network under the action of the first power supply voltage;
the second radio frequency processing circuit is connected with the second power supply module and used for supporting the emission processing of the received target signal of the second network under the action of the second power supply voltage; wherein the first supply voltage is greater than the second supply voltage.
2. The rf front-end module of claim 1, wherein the first rf processing circuit comprises:
the first radio frequency processing module is configured with a first power supply port, and comprises a first transmitting unit, the first transmitting unit is connected with the first power supply port, and the first transmitting unit is used for supporting power amplification and filtering processing on the first high-frequency signal under the action of the first power supply voltage and outputting the first high-frequency signal after filtering processing to a first antenna;
and the second radio frequency processing module is configured with a second power supply port, the second power supply port is connected with the first power supply module, and the second radio frequency processing module is used for supporting power amplification and filtering processing on the second high-frequency signal and outputting the filtered second high-frequency signal to a second antenna.
3. The rf front-end module according to claim 2, wherein the first rf processing module is further configured with a third power port, the first rf processing module includes a second transmitting unit, and the second transmitting unit is connected to the third power port and is further configured to support power amplification and filtering processing of the intermediate frequency signal of the first network, and output the filtered intermediate frequency signal of the first network to the first antenna.
4. The rf front-end module of claim 1, wherein the target signal comprises at least one of a low frequency signal and an intermediate frequency signal, and the second rf processing circuit comprises:
and the first transmitting module is connected with the second power supply module and used for supporting transmitting processing of a target signal of the second network under the action of the second power supply voltage and outputting the target signal to a third antenna.
5. The RF front-end module of claim 4, wherein the target signal comprises the low frequency signal and the intermediate frequency signal, and wherein the first transmit module is configured with a fourth power port and a fifth power port, wherein the first transmit module comprises:
the third transmitting unit is connected with the second power supply module through the fourth power supply port and is used for supporting the transmission processing of the low-frequency signals of the second network;
the fourth transmitting unit is connected with the second power supply module through the fifth power supply port and is used for supporting the transmission processing of the intermediate frequency signal of the second network;
the radio frequency front end module further comprises:
and the second transmitting module is respectively connected with the third transmitting unit, the fourth transmitting unit and the third antenna, and is used for supporting the transmission processing of the radio-frequency signal of a third network and selecting and conducting the intermediate-frequency signal of the second network, the low-frequency signal of the second network and the radio-frequency signal of the third network to transmit to a radio-frequency channel of the third antenna.
6. The RF front-end module of claim 5, wherein the first transmit module further comprises:
and the fifth transmitting unit is respectively connected with the fifth power supply port and the second transmitting module and is used for supporting the transmission processing of the high-frequency signal of the second network.
7. The rf front-end module of claim 1, wherein the second rf processing circuit comprises:
a third transmitting module configured with a sixth power supply port for connecting with the second power supply module, wherein the third transmitting module is configured to support transmission processing of the intermediate frequency signal of the second network under the action of the second power supply voltage, and output the intermediate frequency signal of the second network to a fourth antenna;
a fourth transmitting module configured with a seventh power supply port for connecting with the second power supply module, the fourth transmitting module being configured to support transmission processing of the low-frequency signal of the second network under the action of the second power supply voltage, and output the low-frequency signal of the second network to a fifth antenna.
8. The rf front-end module of claim 7, wherein the third transmitting module is further configured to support transmission processing of low-frequency signals and high-frequency signals of the second network, and select and output any frequency band signal of the low-frequency signals, the intermediate-frequency signals, and the high-frequency signals of the second network to the fourth antenna.
9. The rf front-end module of claim 7, wherein the fourth transmitting module is further configured to support transmission processing of a radio frequency signal of a third network, and select and output any frequency band signal of the low frequency signal of the second network and the radio frequency signal of the third network to the fifth antenna.
10. The rf front-end module of claim 1, wherein the first power module provides the first power voltage in an envelope tracking power mode, and wherein the first power module provides the second power voltage in an average power tracking power mode.
11. A radio frequency system, comprising:
a radio frequency transceiver; and
the rf front-end module as claimed in any one of claims 1 to 10, wherein the first rf processing circuit and the second rf processing circuit are respectively connected to the rf transceiver.
CN202220241854.9U 2022-01-28 2022-01-28 Radio frequency front end module and radio frequency system Active CN216721326U (en)

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WO2023142766A1 (en) * 2022-01-28 2023-08-03 Oppo广东移动通信有限公司 Radio frequency front end module and radio frequency system

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JP2021118431A (en) * 2020-01-24 2021-08-10 株式会社村田製作所 High frequency circuit and communication device
JP2021129223A (en) * 2020-02-14 2021-09-02 株式会社村田製作所 High frequency circuit, high frequency module, and communication device
CN113676207B (en) * 2021-08-12 2022-12-27 Oppo广东移动通信有限公司 Transmitting module, radio frequency system and communication equipment
CN113659995B (en) * 2021-08-12 2022-12-13 Oppo广东移动通信有限公司 Radio frequency system and communication device
CN113676211B (en) * 2021-08-12 2022-10-28 Oppo广东移动通信有限公司 Amplifier module, radio frequency system and communication equipment
CN113676209B (en) * 2021-08-12 2022-07-15 Oppo广东移动通信有限公司 Amplifier module, radio frequency system and communication equipment
CN216721326U (en) * 2022-01-28 2022-06-10 Oppo广东移动通信有限公司 Radio frequency front end module and radio frequency system

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* Cited by examiner, † Cited by third party
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WO2023142766A1 (en) * 2022-01-28 2023-08-03 Oppo广东移动通信有限公司 Radio frequency front end module and radio frequency system

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