CN101901850A - Ultraviolet two-color detector with new structure based on gallium nitride material - Google Patents

Ultraviolet two-color detector with new structure based on gallium nitride material Download PDF

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Publication number
CN101901850A
CN101901850A CN2009100859264A CN200910085926A CN101901850A CN 101901850 A CN101901850 A CN 101901850A CN 2009100859264 A CN2009100859264 A CN 2009100859264A CN 200910085926 A CN200910085926 A CN 200910085926A CN 101901850 A CN101901850 A CN 101901850A
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China
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active layer
type
gallium nitride
ultraviolet
type active
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CN2009100859264A
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Chinese (zh)
Inventor
张爽
赵德刚
刘文宝
孙苋
刘宗顺
张书明
朱建军
王辉
段俐宏
杨辉
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention relates to an ultraviolet two-color detector with a new structure based on a gallium nitride material, which comprises a substrate, a N-type ohmic contact layer, an I-type active layer, a P-type active layer, two N-type ohmic electrodes and a Schottky electrode, wherein the N-type ohmic contact layer is manufactured on the substrate; the I-type active layer is manufactured in the middle of the upper surface of the N-type ohmic contact layer, and the area of the I-type active layer is less than the area of the N-type ohmic contact layer so that a table top is respectively arranged at the two sides of the N-type ohmic contact layer; the P-type active layer is manufactured on the I-type active layer; the two N-type ohmic electrodes are respectively manufactured on the table tops at the two sides of the upper surface of the N-type ohmic contact layer; and the Schottky electrode is manufactured on the P-type active layer.

Description

Ultraviolet two-color detector with new structure based on gallium nitride material
Technical field
The present invention relates to technical field of semiconductor device, particularly a kind of ultraviolet two-color detector with new structure based on gallium nitride material.
Background technology
In recent years, III-nitride material (GaN, AlN, InN, AlGaN, InGaN) is because its energy gap is big, spectral region is adjustable and can cover from ultraviolet light to the infrared light all band, and the high radiation tolerance of high temperature waits outstanding advantage well, in photoelectron and microelectronic, be widely used, be called as third generation semiconductor.Ultraviolet detector based on gallium nitride material is compared with the silicon materials ultraviolet detector, have that visible light is blind, quantum efficiency is high, can be operated in high temperature and the medium irreplaceable advantage of severe rugged environment, in the application of, civil area military in missile warning, the detection of rocket plumage cigarette, aircraft guidance, ultraviolet communication, spaceship, flame combustion supervision, fire monitoring etc., sensitivity is higher, antijamming capability is stronger, false alarm rate is lower, is studied and the very big concern in practical field.
At present, in the world the research based on the ultraviolet detector of gallium nitride material has been obtained a lot of great achievements, succeeded in developing the detector cells device and the focal plane array of various structures, and obtained very high responsiveness.But the detecting band of these detectors immobilizes, can only detect the ultraviolet light of a certain specific band, to not response of the ultraviolet light beyond this wave band, this has just reduced the range of application of detector, reduced the service efficiency of detector, limited further developing and using based on the ultraviolet detector of gallium nitride material.
Summary of the invention
The objective of the invention is to propose a kind of new structure based on ultraviolet two-color detector of gallium nitride material and preparation method thereof.The characteristics of this detector are to utilize in a creative way p type layer in the p-i-n structure detector as the absorbed layer of Schottky structure detector, comparing with monochromatic detector does not increase any material and processing step, just can be in a device integrated two response wave band detector different, that direction is opposite, form the variable ultraviolet two-color detector of detecting band.This device architecture is very simple, easy to make, and detecting band is variable, can detect the ultraviolet light of two different-wavebands respectively.
The invention provides a kind of ultraviolet two-color detector with new structure, comprising based on gallium nitride material:
One substrate;
One N type ohmic contact layer, this N type ohmic contact layer is produced on the substrate;
One I type active layer, this I type active layer is produced on the centre above the N type ohmic contact layer, and the area of this I type active layer makes the both sides of N type ohmic contact layer respectively form a table top less than the area of N type ohmic contact layer;
One P type active layer, this P type active layer is produced on the I type active layer;
Two N type Ohmic electrodes, this two N type Ohmic electrode is produced on the table top of both sides above the N type ohmic contact layer;
One Schottky electrode, this Schottky electrode are produced on the P type active layer.
Wherein said substrate is sapphire, silicon, carborundum, gallium nitride or GaAs material.
Wherein N type ohmic contact layer is the Al-Ga-N material of Al component between 0-100%, and its electron concentration is more than or equal to 1 * 10 18Cm -3
Wherein I type active layer is the Al-Ga-N material of Al component between 0-100%, and its electron concentration is less than or equal to 1 * 10 17Cm -3
Wherein P type active layer be the Al component between 0-100% and with I type active layer in the different Al-Ga-N material of Al component, its hole concentration is more than or equal to 1 * 10 17Cm -3
Wherein N type Ohmic electrode is dots structure or loop configuration.
Wherein the area of Schottky electrode is less than the area of P type active layer.
The invention provides a kind of manufacture method of the ultraviolet two-color detector based on gallium nitride material, comprise the steps:
Step 1: on substrate, utilize epitaxial growth equipment grow successively N type ohmic contact layer, I type active layer and P type active layer;
Step 2: etching, the both sides of P type active layer and I type active layer are etched away, etching depth makes the both sides of N type ohmic contact layer respectively form a table top to the surface of N type ohmic contact layer;
Step 3: on P type layer, make Schottky electrode;
Step 4: on the table top of N type ohmic contact layer both sides, make N type Ohmic electrode respectively;
Step 5: with the substrate back attenuate, carry out tube core and cut apart, be encapsulated at last on the shell, finish the ultraviolet two-color detector of making based on gallium nitride material.
Wherein said substrate is sapphire, silicon, carborundum, gallium nitride or GaAs material.
Wherein N type ohmic contact layer is the Al-Ga-N material of Al component between 0-100%, and its electron concentration is more than or equal to 1 * 10 18Cm -3
Wherein I type active layer is the Al-Ga-N material of Al component between 0-100%, and its electron concentration is less than or equal to 1 * 10 17Cm -3
Wherein P type active layer be the Al component between 0-100% and with I type active layer in the different Al-Ga-N material of Al component, its hole concentration is more than or equal to 1 * 10 17Cm -3
Wherein N type Ohmic electrode is dots structure or loop configuration.
Wherein the area of Schottky electrode is less than the area of P type active layer.
Description of drawings
In order to further specify content of the present invention, below in conjunction with instantiation and drawings in detail as after, wherein:
The ultraviolet two-color detector device architecture schematic diagram that Fig. 1 proposes for the present invention based on gallium nitride material.
Embodiment
See also shown in Figure 1ly, the invention provides a kind of ultraviolet two-color detector with new structure, comprising based on gallium nitride material:
One substrate 10, this substrate 10 is sapphire, silicon, carborundum, gallium nitride or GaAs material;
One N type ohmic contact layer 11, this N type ohmic contact layer 11 is produced on the substrate 10, and this N type ohmic contact layer 11 is the Al-Ga-N material of al composition between 0-100%, and its electron concentration is greater than 1 * 10 18Cm -3Between this N type ohmic contact layer 11 and the N type Ohmic electrode 14 through or form ohmic contact without crossing high-temperature thermal annealing.The subregion of this N type ohmic contact layer 11 may etch away skim by dry method or wet etching method, becomes the part of device platform.The variable thickness of this N type ohmic contact layer 11, between the 0.05-100 micron, and preferably between the 1-4 micron; Al composition in this N type ohmic contact layer 11 can be identical with the al composition in the I type active layer 12, also can be different with the al composition in the I type active layer 12;
One I type active layer 12, this I type active layer 12 are produced on the centre above the N type ohmic contact layer 11, and the area of this I type active layer 12 makes the both sides of N type ohmic contact layer 11 respectively form a table top less than the area of N type ohmic contact layer 11; This I type active layer 12 is the Al-Ga-N material of al composition between 0-100%, and its electron concentration is less than 1 * 10 17Cm -3The variable thickness of this I type active layer 12, between the 0.05-3 micron, and preferably between the 0.1-0.6 micron.Al composition in this I type active layer 12 is different with the al composition in the P type active layer 13;
One P type active layer 13, this P type active layer 13 is produced on the I type active layer 12, and this P type active layer 13 is the Al-Ga-N material of Al component between 0-100%, and its hole concentration is greater than 1 * 10 17Cm -3, between this P type active layer 13 and the Schottky electrode 15 through or form Schottky contacts without crossing high-temperature thermal annealing.The subregion of this P type active layer 13 is etched away fully by dry method or wet etching method, becomes the part of device platform.The variable thickness of this P type active layer 13, between the 0.05-3 micron, and preferably between the 0.1-0.6 micron; Al composition in this P type active layer 13 is different with the al composition in the I type active layer 12;
Two N type Ohmic electrodes 14, this two N type Ohmic electrode 14 is produced on the step of both sides on the N type ohmic contact layer 11, this two N type Ohmic electrode 14 is dots structure or loop configuration, this two N type Ohmic electrode 14 through or without crossing high-temperature thermal annealing, and form ohmic contact with N type ohmic contact layer 11.This two N type Ohmic electrode 14 is the single or multiple lift metal, by Ti, Al, Au, Ni, and Ti, Pd, Pt, Mo, one or more compositions in the higher metal of fusing points such as Ir;
One Schottky electrode 15, this Schottky electrode 15 are produced on the P type active layer 13, and the area of this Schottky electrode 15 is less than the area of P type active layer 13, this Schottky electrode 15 through or without crossing high-temperature thermal annealing, and form Schottky contacts with P type active layer 13.This Schottky electrode 13 is the single or multiple lift metal, by Ti, Al, Au, Ni, and Ti, Pd, Pt, Mo, one or more compositions in the higher metal of fusing points such as Ir;
Please consult shown in Figure 1ly again, the present invention also provides a kind of manufacture method of the ultraviolet two-color detector based on gallium nitride material, it is characterized in that, comprises the steps:
Step 1: on substrate 10, utilize epitaxial growth equipment grow successively N type ohmic contact layer 11, I type active layer 12 and P type active layer 13;
Described substrate 10 is sapphire, silicon, carborundum, gallium nitride or GaAs material; Described N type ohmic contact layer 11 is the Al-Ga-N material of Al component between 0-100%, and its electron concentration is greater than 1 * 10 18Cm -3Described I type active layer 12 is the Al-Ga-N material of Al component between 0-100%, and its electron concentration is less than 1 * 10 17Cm -3Described P type active layer 13 be the Al component between 0-100% and with I type active layer 12 in the different Al-Ga-N material of Al component, its hole concentration is greater than 1 * 10 17Cm -3
Step 2: etching, P type active layer 13 and I type active layer 12 both sides etchings are formed two independent table tops, etching depth reaches the surface of N type ohmic contact layer 11 at least, and the upper surface of N type ohmic contact layer 11 both sides is revealed;
Step 3: make Schottky electrode 15 on P type layer 13, the area of this Schottky electrode 15 is less than the area of P type active layer 13;
Step 4: the table top place on N type ohmic contact layer 11 both sides makes N type Ohmic electrode 14 respectively, and this two N type Ohmic electrode 14 is dots structure or loop configuration;
Step 5: with substrate 10 thinning back sides, carry out tube core and cut apart, be encapsulated at last on the shell, finish the ultraviolet two-color detector of making based on gallium nitride material.
In sum, though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention; anyly have the knack of this operator; without departing from the spirit and scope of the present invention, when can doing various changes and retouching, so protection scope of the present invention is when looking being as the criterion that claim defines.

Claims (14)

1. ultraviolet two-color detector with new structure based on gallium nitride material comprises:
One substrate;
One N type ohmic contact layer, this N type ohmic contact layer is produced on the substrate;
One I type active layer, this I type active layer is produced on the centre above the N type ohmic contact layer, and the area of this I type active layer makes the both sides of N type ohmic contact layer respectively form a table top less than the area of N type ohmic contact layer;
One P type active layer, this P type active layer is produced on the I type active layer;
Two N type Ohmic electrodes, this two N type Ohmic electrode is produced on the table top of both sides above the N type ohmic contact layer;
One Schottky electrode, this Schottky electrode are produced on the P type active layer.
2. the ultraviolet two-color detector based on gallium nitride material according to claim 1, wherein said substrate is sapphire, silicon, carborundum, gallium nitride or GaAs material.
3. the ultraviolet two-color detector based on gallium nitride material according to claim 1, wherein N type ohmic contact layer is the Al-Ga-N material of Al component between 0-100%, its electron concentration is more than or equal to 1 * 10 18Cm -3
4. the ultraviolet two-color detector based on gallium nitride material according to claim 1, wherein I type active layer is the Al-Ga-N material of Al component between 0-100%, its electron concentration is less than or equal to 1 * 10 17Cm -3
5. the ultraviolet two-color detector based on gallium nitride material according to claim 1, wherein P type active layer be the Al component between 0-100% and with I type active layer in the different Al-Ga-N material of Al component, its hole concentration is more than or equal to 1 * 10 17Cm -3
6. the ultraviolet two-color detector based on gallium nitride material according to claim 1, wherein N type Ohmic electrode is dots structure or loop configuration.
7. the ultraviolet two-color detector based on gallium nitride material according to claim 1, wherein the area of Schottky electrode is less than the area of P type active layer.
8. the manufacture method based on the ultraviolet two-color detector of gallium nitride material comprises the steps:
Step 1: on substrate, utilize epitaxial growth equipment grow successively N type ohmic contact layer, I type active layer and P type active layer;
Step 2: etching, the both sides of P type active layer and I type active layer are etched away, etching depth makes the both sides of N type ohmic contact layer respectively form a table top to the surface of N type ohmic contact layer;
Step 3: on P type layer, make Schottky electrode;
Step 4: on the table top of N type ohmic contact layer both sides, make N type Ohmic electrode respectively;
Step 5: with the substrate back attenuate, carry out tube core and cut apart, be encapsulated at last on the shell, finish the ultraviolet two-color detector of making based on gallium nitride material.
9. the manufacture method of the ultraviolet two-color detector based on gallium nitride material according to claim 8, wherein said substrate is sapphire, silicon, carborundum, gallium nitride or GaAs material.
10. the manufacture method of the ultraviolet two-color detector based on gallium nitride material according to claim 8, wherein N type ohmic contact layer is the Al-Ga-N material of Al component between 0-100%, its electron concentration is more than or equal to 1 * 10 18Cm -3
11. the manufacture method of the ultraviolet two-color detector based on gallium nitride material according to claim 8, wherein I type active layer is the Al-Ga-N material of Al component between 0-100%, and its electron concentration is less than or equal to 1 * 10 17Cm -3
12. the manufacture method of the ultraviolet two-color detector based on gallium nitride material according to claim 8, wherein P type active layer be the Al component between 0-100% and with I type active layer in the different Al-Ga-N material of Al component, its hole concentration is more than or equal to 1 * 10 17Cm -3
13. the manufacture method of the ultraviolet two-color detector based on gallium nitride material according to claim 8, wherein N type Ohmic electrode is dots structure or loop configuration.
14. the manufacture method of the ultraviolet two-color detector based on gallium nitride material according to claim 8, wherein the area of Schottky electrode is less than the area of P type active layer.
CN2009100859264A 2009-05-27 2009-05-27 Ultraviolet two-color detector with new structure based on gallium nitride material Pending CN101901850A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109671825A (en) * 2017-10-17 2019-04-23 北京天元广建科技研发有限责任公司 A kind of polar semiconductor light emitting diode
CN111524995A (en) * 2020-04-21 2020-08-11 昌吉学院 β-Ga2O3GaN heterojunction solar blind/visible blind double-color ultraviolet detector and preparation method thereof
CN112164732A (en) * 2020-09-15 2021-01-01 五邑大学 Ultraviolet photodiode and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109671825A (en) * 2017-10-17 2019-04-23 北京天元广建科技研发有限责任公司 A kind of polar semiconductor light emitting diode
CN111524995A (en) * 2020-04-21 2020-08-11 昌吉学院 β-Ga2O3GaN heterojunction solar blind/visible blind double-color ultraviolet detector and preparation method thereof
CN111524995B (en) * 2020-04-21 2022-02-15 昌吉学院 β-Ga2O3GaN heterojunction solar blind/visible blind double-color ultraviolet detector and preparation method thereof
CN112164732A (en) * 2020-09-15 2021-01-01 五邑大学 Ultraviolet photodiode and preparation method thereof
CN112164732B (en) * 2020-09-15 2022-04-05 五邑大学 Ultraviolet photodiode and preparation method thereof

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Open date: 20101201