CN101897089B - 具有集成光电晶体管的半导体激光器 - Google Patents

具有集成光电晶体管的半导体激光器 Download PDF

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CN101897089B
CN101897089B CN2008801203928A CN200880120392A CN101897089B CN 101897089 B CN101897089 B CN 101897089B CN 2008801203928 A CN2008801203928 A CN 2008801203928A CN 200880120392 A CN200880120392 A CN 200880120392A CN 101897089 B CN101897089 B CN 101897089B
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M·F·C·谢曼
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Tongkuai Optoelectronic Device Co ltd
Koninklijke Philips NV
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Abstract

本发明涉及在用于利用自混合效应测量距离和/或运动的光学模块中使用的半导体激光器。半导体激光器包含含有嵌在两个层序列(1，2)之间的有源区(3)的层结构且进一步包含布置成测量在所述激光器内谐振的光场的强度的光电探测器。光电探测器为包括发射极层(e)、集电极层(c)和基极层(b)的光电晶体管，发射极层(e)、集电极层(c)和基极层(b)的每一个为体层并形成所述层序列(1，2)之一的一部分。利用所提出的半导体激光器，与已知模块相比可以更容易、以更低成本和更小尺寸地制造基于该激光器的光学模块。

Description

具有集成光电晶体管的半导体激光器
技术领域
本发明涉及一种半导体激光器，特别是垂直腔体表面发射激光器(VCSEL)，其包括包含嵌在两个层序列之间的有源区的层结构并且包括布置成测量在所述激光器内谐振的光场的强度的光电探测器。本发明进一步涉及一种用于测量距离和/或运动并且包含这种半导体激光器的光学传感器模块。
背景技术
所提出的半导体激光器的重要应用是用在测量距离和/或运动的光学传感器模块中。这种光学传感器模块包含至少一个光学传感器，所述光学传感器包含具有激光器腔体用以产生测量束的激光器、用于将测量束会聚在作用平面内以及用于将由对象反射的测量束辐射会聚到激光器腔体内以产生自混合效应的会聚装置以及用于测量自混合效应的装置，该装置包含辐射敏感探测器和关联的信号处理电路系统。这种光学传感器模块可被包含在基于对象和装置的彼此相对运动的光学输入装置内，但是也可形成不同类型的测量设备的一部分。
US 6,707,027公开了使用自混合效应的这种光学输入装置。如果外部反射器或者对象布置在激光器前方使得获得外部激光器腔体，则发生激光自混合。对于输入装置的情形，装置与对象(即反射器，其可以是人手指或桌面)的彼此相对运动造成对外部腔体的调谐。这种调谐导致再次调节激光器平衡条件并因而导致激光器输出功率的可探测变化。这些变化或者波动是反复性的，为对象在等于激光辐射波长一半的距离上沿着光束的轴的位移的函数。这意味着激光波动频率与外部反射器的速度成比例。
基于激光自混合的测量装置表现出高灵敏度，并因而表现出高精度，这可归因于再次进入激光器腔体的反射的激光辐射决定激光频率且因而在激光器腔体内被放大的事实。按此方式，获得了高的接收器灵敏度，而不使用比如光学滤波器的附加装置或者诸如干涉仪的复杂装置。配备有两个二极管激光器的这一类型的光学输入装置允许测量所述装置和对象相对于彼此沿两个互相垂直的(x-和y-)方向以及任何中间方向的运动。这种装置例如可用于在显示面板各处导航或移动光标以选择显示器上的图标。
US 5,892,786公开一种垂直微腔体发光装置的输出控制。这种装置包含嵌在两个DBR叠层之间的VCSEL型二极管激光器，其中光电晶体管嵌在所述DBR叠层之一内。利用测量激光器腔体内部光场强度的光电晶体管的输出，可以控制输出功率以获得恒定的水平。这篇文献的装置既不利用自混合效应，也不设计成将来自对象的测量辐射转换成测量信号。该模块的异质结光电晶体管包含含有量子阱的层。该量子阱增加了光电晶体管的波长选择性，从而仅探测具有受激发射的期望激光波长的辐射，且不探测自发发射的宽波长范围。由于此量子阱的原因，光电晶体管的增益大。然而，这种装置不适合于诸如利用自混合效应以高精度测量距离和/或运动之类的应用。
发明内容
本发明的目的是提供一种半导体激光器以及利用自混合效应来测量距离和/或运动的光学模块，该半导体激光器可以在该光学模块中使用，并且此外与在已知模块中相比可以更容易地、以更低成本且更小尺寸地制造。
该目的是利用根据本发明的实施例的半导体激光器和光学传感器模块来实现的。这种半导体激光器和光学传感器模块的有利实施例在下文给出的说明和优选实施例部分中予以描述。所提出的半导体激光器包含含有嵌在两个层序列之间的有源区的层结构且进一步包含布置成测量在所述激光器内谐振的光场的强度的光电探测器。光电探测器为包括发射极层、集电极层和基极层的光电晶体管，发射极层、集电极层和基极层的每一个为体层(bulk layer)并形成所述层序列之一的一部分，在下文中所述层序列也称为层堆叠体。
该半导体激光器为垂直腔体表面发射激光器(VCSEL)，两个层堆叠体形成激光器腔体的两个端部镜。这些端部镜可以是例如分布式布拉格反射器(DBR)。
在所提出的半导体激光器中，含有发射极层、集电极层和基极层的光电晶体管嵌在层堆叠体或层序列之一内，发射极层、集电极层和基极层均为体层。体层可理解为是指不包含例如量子阱结构的任何附加结构的层。有源区可理解为是指其中产生激光辐射的区域或层。
本发明基于这样的认知：对于利用自混合效应测量距离和/或运动的测量装置中使用的光学模块而言，如US 5,892,786中提出的量子阱应被避免从而获得测量装置的高灵敏度和精度。
在所提出的半导体激光器中，光电晶体管的光电流应足够大以克服限制系统信噪比的散粒噪声(shot noise)。另一方面，晶体管的增益应是低的以避免过多的光电晶体管电流。换言之，光电晶体管的基极电流应是高的，以使得晶体管具有优选地在介于1和10之间的范围内的低增益因子，以避免过多的集电极电流。因此，基极、发射极和集电极层布置成靠近半导体激光器的有源区或层。光电晶体管布置在光场强度仍超过VCSEL峰值强度的至少10％的层堆叠体部分内，不过3％也可以是足够的，该峰值强度是在有源区附近获得的。借助这种措施，受激发射和自发发射之间的比例显著增大，使得波长选择性变为小问题。再者，更靠近有源区的光子强度是足够高的，以提供足够高的光电流从而克服散粒噪声限制。在一个实施例中，光电晶体管安置在层序列的半部内，与另一半部相比，该半部在位置上更靠近有源区。优选地，光电晶体管布置在n侧DBR的上半部内，该上半部为n侧DBR的更靠近有源层的部分。
当所提出的半导体激光器设计成形成VCSEL时，光电晶体管的层由在形成激光器腔体的端部镜的层堆叠体之一中已经存在的层形成。这些层被掺杂成仅具有恰当的带隙以形成光电晶体管的基极、集电极和发射极层。优选地，集电极层由高带隙材料形成且基极层和发射极层由低带隙材料形成。低带隙材料为具有比在激光器腔体内谐振的光场的光子能量低的带隙的材料。另一方面，高带隙材料具有比该光子能量大的带隙，典型地显著大于该光子能量。对于整个基极和发射极区域，优选地层厚度被选择为等于四分之一光学波长且层位置使得基极位于光场强度峰值处并且发射极处于光场的零位。
具有所提出的光电晶体管结构的这种半导体激光器可以以低成本制造，因为仅使用体层。再者，与不具有光电晶体管的这样的半导体激光器不同，不必沉积附加层。本发明使用已经被包含在这种激光器的层堆叠体中的层。通过调适相应层堆叠体的相关层的材料的带隙，这些层可以配置成形成光电晶体管，使得不需要附加层，如上文已经所述，且模块的制造变得更容易。通常，光电晶体管嵌于其中的层堆叠体为分布式布拉格反射器的层堆叠体。通过使用光电晶体管替代光电二极管，可以有利地利用晶体管的放大，使得与光电二极管相比获得改善的信号。再者，p层不需要额外的接触，该p层将形成光电二极管的阳极且对于光电晶体管的情形将形成基极。
在该半导体激光器的一个实施例中，光电晶体管的发射极层被设置到接地电势。这提供了用于激光器电流的接地接触以及用于光电晶体管的接地端子，使得激光器阳极和光电晶体管集电极均可以以相对于接地的正电压被驱动，因而简化了供电方案。
在另一实施例中，半导体激光器设计成是顶部发射二极管激光器并且光电晶体管嵌在形成与顶部发射二极管激光器的主发射侧相对布置的n型反射器的层序列内。此外，在此实施例中，集电极区域优选地由高带隙材料形成且基极和发射极区域均由低带隙材料形成，即足够低以允许发生光子吸收。
所提出的光学模块包含至少一个这种半导体激光器，所述半导体激光器发射测量束，该测量束在被对象反射时再次进入激光器腔体并产生自混合效应，该自混合效应由光电晶体管测量。这种用于测量距离和/或运动的光学测量模块还包含或者连接到恰当的信号处理电路系统，该信号处理电路系统基于光电晶体管的测量信号来计算距离和/或运动。这种光学模块可嵌在输入装置或者其中包含这种输入装置的设备内，因为根据本发明的传感器模块允许减小该输入装置的尺寸和成本，且由此扩大应用领域。将这种输入装置包含在设备内不仅节约成本和空间，而且为设计者提供更多的设计自由度。除了集成VCSEL和光电晶体管结构之外，其中实施了本发明的该输入装置可具有与US 6,707,027(其通过引用结合于此)中所描述的激光自混合装置相同的构造。其中可以使用该输入装置的设备为例如台式计算机用鼠标、笔记本计算机、移动电话、个人数字助理(PDA)以及手持式游戏机。本发明也可以用在这样的专业测量设备中，其用于测量例如到对象的距离或者对象的运动、液体的运动以及嵌在液体内的颗粒的运动。大体上，本发明可以用于其中可以使用激光自混合效应的任何应用。
本发明的这些和其它方面将从下文描述的实施例而变得清楚，并结合下文描述的实施例得以阐明。
附图说明
所提出的半导体激光器在下文中通过实例的方式并结合附图予以描述，而不限制由权利要求限定的保护范围。附图示出：
图1为可以在本发明中使用的VCSEL激光器的典型设置；
图2为示出在根据本发明实例的VCSEL的n侧镜内光电晶体管相对于光场的位置的示意性视图；以及
图3为输入装置的实例的截面。
具体实施方式
图1示出可以在本发明中使用的VCSEL的基本设计的示意性视图。VCSEL包含下层堆叠体1和上层堆叠体2，有源层3嵌在下层堆叠体1和上层堆叠体2之间。该VCSEL形成于衬底4上，衬底还可包含冷却功能。下层和上层堆叠体典型地设计成形成p型和n型DBR。这两个DBR为激光器腔体的端部镜，其中上p型DBR形成为是部分透射的，例如对于所产生的激光辐射的反射率为98％，从而作为外耦合镜。上p型DBR和下n型DBR典型地由高折射率层GaAs(高折射率)层和低折射率层AlAs(低折射率)的交替层组成。GaAs层具有低的Al％，使得材料带隙高于光子能量。
在该实例中，光电晶体管嵌在下层堆叠体1内，下层堆叠体1为VCSEL的n侧镜(n型DBR)。图2示出在此镜中光电晶体管相对于光场的位置。
薄的p掺杂层放置于VCSEL的n掺杂镜内的GaAs/AlAs结处以形成光电晶体管的基极。图2的上线代表材料折射率，在含有低的Al百分比的AlGaAs四分之一波长厚的层中材料折射率高，在含有高的Al百分比的AlGaAs层(或AlAs)中材料折射率低。光电晶体管层由GaAs制成，使得光子可以形成电子空穴对。电子扩散离开基极b，主要扩散到发射极e内，发射极e也由GaAs材料形成。四分之一波长厚的GaAs层的总厚度为约60nm，该总厚度的30nm为p掺杂的，毗邻AlAs n掺杂集电极层c。发射极e具有与基极b相同的带隙以防止由于带边台阶所致的电流增益增大，电流增益增大将在发射极e带隙高于基极时发生。图2还示意性地示出了导带和价带能量(分别为Ec和Ev)。这些代表没有施加场的未掺杂材料属性。
光学强度分布示于图2的下部分。从该图可以看出，在发射极GaAs层中光学强度处于零位，使得其对光子吸收没有太大贡献，即使其具有对于吸收而言是足够小的带隙。另一方面，基极区域位于光场峰值处并具有显著的光子吸收。恰当地将基极区域置为邻近AlAs集电极，这简化了对低带隙发射极的要求(发射极内较高的带隙将增大晶体管增益)而不导致太高的不必要的光学损耗，并且允许容易地设计低增益光电晶体管。
在此实施例中，低增益的集成光电晶体管已经通过以下方式来设计：不同地掺杂标准VCSEL中的一个镜层以及略微减少该镜层中的Al％使得该镜层将探测光子。这形成一种效率低的探测器，该探测器优选地在镜堆叠体内置于靠近有源层的位置，在该位置处激光光子密度远高于激光器外部的位置。结果，预期的光电流与具有集成光电二极管的VCSEL的光电流相当，但是对不希望的自发发射的探测效率非常低。光电晶体管与激光器的n接触共享发射极n接触，p型接触是不需要的。衬底发送来自与VCSEL极性相同的集电极的光电流。利用非合金n型接触，VCSEL和光电晶体管均可以被接触，而没有任何超出标准VCSEL层厚度的附加层厚度。
图3为根据本发明的输入装置的实例的图解性截面视图。该装置在其下侧包含底板5，该底板5为用于半导体激光器的载体，此半导体激光器在此实施例中为上述具有集成光电晶体管的VCSEL型激光器。在图3中，仅一个激光器6是可见的，但是通常至少第二激光器被设置在底板5上以便能够探测沿两个垂直方向的运动。激光器发射激光束9。该装置在其上侧设有透明窗口8，例如人手指的对象10将在该透明窗口8上移动。例如平凸透镜的透镜7布置在二极管激光器6和该窗口之间。该透镜将激光束9聚焦在透明窗口的上侧处或附近。如果在此位置存在对象，那么对象散射光束9。光束9的一部分辐射沿激光器6的方向被散射。这部分被透镜7会聚在激光器6的发射表面上并再次进入此激光器的腔体。返回到腔体内的辐射在此腔体内引发变化，该变化尤其导致由激光器6发射的激光辐射的强度的变化。该变化可由激光器的光电晶体管探测到，该光电晶体管将辐射变动转换为电信号，并将该电信号施加到用于处理此信号的电子电路11。
尽管本发明已经在附图和前述描述中详细地说明和描述，但是这种说明和描述应当被认为是说明性或示范性而非限制性的，即本发明不限于所公开的实施例。上文以及权利要求中描述的不同实施例也可以被组合。本领域技术人员在实践所要求保护的本发明时，通过研究附图、公开内容和所附权利要求，可以理解和实现对所公开实施例的其它变动。例如，所使用的VCSEL也可以由其它材料层组成或者可以是本领域中已知的底部发射激光器。再者，半导体激光器也可设计成垂直扩展腔体表面发射激光器(VECSEL)。层堆叠体内层的数目不受本发明限制。该数目可以针对层堆叠体的所要求的光学属性而恰当地选择。
在权利要求中，词“包含”不排除其它元件或步骤，以及不定冠词“一”(“a”或“an”)不排除多个。在互不相同的从属权利要求中列举某些措施的纯粹事实并不表示不能有利地使用这些措施的组合。权利要求中的附图标记不应解读为限制这些权利要求的范围。
附图标记列表
1  下层序列
2  上层序列
3  有源区
4  衬底
5  底板
6  激光器
7  透镜
8  透明窗口
9  激光束
10 对象
11 电子电路
e  发射极
b  基极
c  集电极

Claims (9)

1.垂直腔体表面发射激光器，包含层结构且进一步包含布置成测量在所述激光器内谐振的光场的强度的光电探测器，所述层结构包括嵌在两个层序列(1，2)之间的有源区(3)，
其中该光电探测器为包括发射极层(e)、集电极层(c)和基极层(b)的光电晶体管，发射极层(e)、集电极层(c)和基极层(b)中的每一个为体层并形成所述层序列(1，2)之一的一部分，其特征在于，该光电晶体管布置在其中光场强度仍超过峰值强度的10％的该层序列(1)部分内，该峰值强度是在该有源区(3)附近获得的。
2.根据权利要求1的垂直腔体表面发射激光器，
其中该光电晶体管布置在该层序列(1)的两个半部的一个半部内，该一个半部在位置上更靠近该有源区(3)。
3.根据权利要求1的垂直腔体表面发射激光器，
其中所述两个层序列(1，2)设计成形成该激光器的端部镜，并且该发射极层(e)、该集电极层(c)和该基极层(b)通过恰当地调适所述层序列(1，2)的各层的带隙来形成。
4.根据权利要求3的垂直腔体表面发射激光器，
其中该集电极层(c)由高带隙材料形成并且该基极层(b)和该发射极层(e)由低带隙材料形成，该低带隙材料具有的带隙低于在该激光器(6)内谐振的光场的光子能量。
5.根据权利要求1的垂直腔体表面发射激光器，
其中该发射极层(3)被设置到接地电势。
6.根据权利要求1的垂直腔体表面发射激光器，
其中由该基极层(b)和发射极层(e)形成的区域的厚度等于该光场的光学波长的四分之一，并且所述区域布置成使得该基极层(b)位于光场强度峰值处且该发射极层(e)位于该光场的零位。
7.用于测量距离和/或运动的光学传感器模块，包含发射测量束(9)的至少一个根据权利要求1的垂直腔体表面发射激光器(6)，该测量束在被对象(10)反射时，再次进入激光器腔体并产生由所述光电晶体管测量的自混合效应。
8.输入装置，所述输入装置包含根据权利要求7的光学传感器模块。
9.测量装置，包含根据权利要求7的光学传感器模块。
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