CN101894824A - Bearing structure of electronic component and preparation method thereof - Google Patents

Bearing structure of electronic component and preparation method thereof Download PDF

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Publication number
CN101894824A
CN101894824A CN2009102035682A CN200910203568A CN101894824A CN 101894824 A CN101894824 A CN 101894824A CN 2009102035682 A CN2009102035682 A CN 2009102035682A CN 200910203568 A CN200910203568 A CN 200910203568A CN 101894824 A CN101894824 A CN 101894824A
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China
Prior art keywords
supporting body
interface layer
electronic component
bearing structure
insulated circuit
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CN2009102035682A
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Chinese (zh)
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CN101894824B (en
Inventor
江振丰
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Guanghong Precision Co Ltd
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Guanghong Precision Co Ltd
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Priority to CN200910203568.2A priority Critical patent/CN101894824B/en
Publication of CN101894824A publication Critical patent/CN101894824A/en
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Publication of CN101894824B publication Critical patent/CN101894824B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Manufacturing Of Printed Wiring (AREA)

Abstract

The invention discloses a bearing structure of an electronic component, comprising a bearing body, an interface layer, an insulation circuit and a metal layer, wherein the bearing body is formed by ejecting plastic; a reflection cup is formed on the bearing body; after the bearing is etched, catalyzed and activated, metal nickel or copper is deposited on the surface of the bearing body by no-electrolysis electroplating or a chemical method to form the interface layer; then, laser is used for stripping the local interface layer to form a local insulation circuit; next, metal layers made of copper, nickel, silver or gold, and the like are electroplated on the interface layer; and then the plastic bearing structure of the high-reflection conductor metal is completed.

Description

Bearing structure of electronic component and preparation method thereof
Technical field
The present invention relates to electronic component or lead frame technology of preparing, particularly refer to the bearing structure of the high reflection of a kind of tool conductor metal.
Background technology
Existing LED conducting wire frame, general tablet (as: copper, copper alloy or aluminium etc.) based on conductive material, form the stock of lead frame through punching press, subsequently with electroplating processes, the metal level (as tin, silver, gold etc.) that has high conductivity at lead frame stock electroplating surface one deck, utilize embedded plastic ejection forming technique (Insert Molding) subsequently, form the LED conducting wire frame of cup-shaped, but the reflector space of this cup-shaped lead frame can't effectively provide the reflecting effect of metal level.
In addition, also have with laser direct activation (Laser Direct Structuring, LDS) processing procedure is applied on the lead frame of light-emitting diode, this processing procedure shortcoming is for needing to use laser direct activation processing procedure proprietary material, after this material penetrates, its electrode and reflector space use laser to carry out surface active, because of laser can make surface roughening, and the area of laser is excessive, and restrictions such as angle and processing procedure time are arranged because of its laser on the inclined-plane, and the roughness behind the laser activation can cause the reflection angle of its original design and reflecting brightness difference to some extent, in addition, 3D stereo laser process equipment costliness, process time is oversize, and cost is too high.
Moreover, existing person also has in addition with low temperature co-fired multi-layer ceramics (Low-Temperature Co-firedCeramics, LTCC), because pottery is similar with the material of silicon, can be connected with chip, its heat conduction and heat-resistance coefficient are all fine, but low temperature co-fired multi-layer ceramics it need the temperature about 900 degree to carry out sintering, and it has the different phenomenon of shrinkage, easily increases electrical variable, and ceramic processing cost costliness, a large amount of production costs descend and are difficult for.
Similar techniques also has the novel patent number M285037 in Taiwan at present, patent name is a package structure for LED, this patent content is for utilizing ejection formation, use vacuum mode to carry out layer metal deposition, form insulated circuit with laser subsequently, this processing procedure mode is because use vacuum equipment, so at (system price, using rate of metal etc.) aspect the cost reduction its restriction is arranged, and the formed rete of vacuum moulding machine is thin (Thin-Fi lm), and effect is limited on reflectivity and conductivity.
In this, the present invention deeply inquires at the problem of the conductor of aforementioned existing electronic component, actively seek solution, and then the bearing structure of developing electronic component of success, solve the inconvenience that problem was caused and the puzzlements such as supporting body processing procedure complexity, reflection efficiency and heat conduction, conduction of existing electronic component with this.
Summary of the invention
Main purpose of the present invention is to provide the plastic electronic component structure of a kind of reflection or conductor metal layer, promotes reflection efficiency or conduction efficiency with this, and can freely design trickle circuit and insulated circuit pattern.
An of the present invention purpose is to provide the electronic component structure of the high reflection of a kind of tool conductor metal layer, simplifies processing procedure with this, and can make in a large number, to reduce its cost of manufacture.
Can reach foregoing invention first and implement the bearing structure of purpose electronic component, include:
Supporting body;
Interface layer is deposited on the surface of supporting body with electroless plating;
Insulated circuit, with the local interface layer of laser lift-off supporting body upper surface, side surface and lower surface to form required circuit and insulated circuit;
Metal level, with electroplate or chemical method deposited conductor metal on boundary layer.
Can reach foregoing invention second and implement the bearing structure of purpose electronic component, include:
Supporting body, its surface has bearing structure, and at least one side extends to form at least one side arm;
Interface layer is deposited on the surface of supporting body with electroless plating;
Insulated circuit, with the local interface layer of laser lift-off supporting body upper surface and lower surface to form required circuit and insulated circuit;
Metal level, with electroplate or chemical method deposited conductor metal on boundary layer.
A kind of preparation method of bearing structure of electronic component, its step includes:
Plastics penetrate step, provide at least one side to extend to form the supporting body of at least one side arm;
The electroless plating step forms interface layer on this supporting body and side arm, and covers this supporting body and side arm;
The laser isolation step forms front insulated circuit, back side insulated circuit in the interface layer of this supporting body and side arm;
Plating step forms metal level on this interface layer;
Segmentation procedure cuts apart side arm with the formation bearing structure, and finishes the making of this plastic electronic component structure.
The present invention compared with prior art, has following advantage: the difficulty that the processing aspect is arranged for superfine little circuit, the present invention can be used for the technology of superfine little circuit, adopt laser to carry out peel off (ablation) of local interface layer 2, can reach and freely design and processing procedure is simple and easy and diversified production procedure.
Description of drawings
Fig. 1 is the supporting body schematic appearance of first embodiment of the invention;
Fig. 2 is the schematic diagram that forms on the supporting body of first embodiment after the interface layer;
Fig. 3 is the schematic diagram that the interface layer of the supporting body Shang Biao Mian With side surface of first embodiment forms insulated circuit;
Fig. 4 is the schematic diagram that the interface layer of the supporting body Xia Biao Mian With side surface of first embodiment forms insulated circuit;
Fig. 5 is the schematic diagram that forms metal level on the interface layer of first embodiment, finishes the schematic diagram that this electronic component structure is made simultaneously;
Fig. 6 is the supporting body schematic appearance of second embodiment of the invention;
Fig. 7 is the schematic diagram that forms on the supporting body of second embodiment after the interface layer;
Fig. 8 is the schematic diagram that the interface layer of the supporting body of second embodiment and side arm upper surface forms the front insulated circuit;
Fig. 9 is the schematic diagram that the interface layer of the supporting body of second embodiment and side arm lower surface forms back side insulated circuit;
Figure 10 is the schematic diagram that forms metal level on the interface layer of second embodiment and the reflection graphic patterns;
Figure 11 is a schematic diagram of finishing this electronic component structure making of second embodiment;
Figure 12 is the schematic diagram of its front insulated circuit of single side arm;
Figure 13 is the schematic diagram of its front insulated circuit of many side arms;
Figure 14 is the schematic diagram of its back side insulated circuit of many side arms;
Figure 15 is its first preparation flow block schematic diagram of electronic component of the present invention;
Figure 16 is its second preparation flow block schematic diagram of electronic component of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments content of the present invention is described in further details.
Embodiment:
See also second embodiment of first embodiment, Fig. 6 to Figure 11 of Fig. 1 to Fig. 5, the bearing structure of electronic component provided by the present invention mainly includes: supporting body 1, interface layer 2, insulated circuit 3 and metal level 4 constitute.
This supporting body 1, by the unitary plastic ejection formation, its supporting body 1 does not have the side arm of extension in first embodiment of Fig. 1, and its supporting body 1 at least one side extends to form at least one side arm 11 among second embodiment of Fig. 6; Wherein down sloping reflector 12 is forming reflector 13 in the surface for this supporting body 1, and this supporting body 1 surface is between 15 degree～85 are spent with angle that reflecting surface 12 defines; Wherein this supporting body 1 takes second place for comprising the plastics that mix metal solvent in advance or comprising that to mix organic plastics in advance obtained, and supporting body 1 is carried out surface etching or sandblast, and the activation step before the electroless plating processing procedure; Or this supporting body 1 is not for having the plastics that mix metal solvent or not having that to mix organic plastics obtained, take second place, the method that supporting body 1 after its moulding re-uses preimpregnation (Pre-Dip), chemical etching or sandblast makes surface roughening, in addition it, impose catalystization in supporting body 1 surface again, carry out the preceding activation step of electroless plating processing procedure at last again;
Interface layer 2 is deposited on the surface of supporting body 1 with electroless plating, after wherein the supporting body 1 that activated via catalyst is transferred to the electroless plating processing procedure, and can be on the surface of supporting body to form one deck chemical nickel or copper metal interface layer 2, as Fig. 2 or shown in Figure 7;
Insulated circuit 3, with the local interface layer 2 of laser lift-off to form required insulated circuit 3; Laser is peeled off the local interface layer 2 of supporting body 1 upper surface, side surface and lower surface in first embodiment, makes and forms the insulated circuit 3 of extended loop around supporting body 1 on the supporting body 1, as shown in Figure 3 and Figure 4; In a second embodiment with the local interface layer 2 of laser lift-off to form required front insulated circuit 31, back side insulated circuit 32, as Fig. 8 and shown in Figure 9, this front insulated circuit 31 and back side insulated circuit 32 for by the interface layer 2 on laser lift-off supporting body 1 surface and the edge that extends beyond supporting body 1 in the surf zone of side arm 11; Be illustrated in figure 8 as the schematic diagram of two side arms, 11 its front insulated circuits 31, be the schematic diagram of single side arm 11 its front insulated circuits 31 as shown in figure 12, as Figure 13 and the schematic diagram that Figure 14 shows that many side arm 11 its front insulated circuits 31 and back side insulated circuit 32, wherein this laser is mainly carbon dioxide (CO 2) laser, the refined chromium of rubidium (Nd:YAG) laser, Nd-doped yttrium vanadate crystal (Nd:YVO 4) electronic laser bundle such as laser, quasi-molecule (EXCIMER) laser, its wavelength is to be selected from 248nm, 308nm, 355nm, 532nm, 1064nm or 10600nm;
Metal level 4, with electroplate or the chemical deposition conductor metal on interface layer 2, wherein the metal level 4 of this plating or chemical deposition can be selected from copper, nickel, silver, gold, chromium, any one of the group that chemical replacement gold etc. is constituted forms, this metal level 4 also can improve the reflectivity of reflector 13, and then form a kind of plastic electronic component structure that can freely design conducting wire and metal level 4, luminous element lead frame with this technology made, have and do not limit the quantity number, can freely design reflecting surface 12 shapes of supporting body 1, also can use side by side for many luminous elements, the present invention utilizes the high usage of plating or chemical deposition to deposit interface layer 2 and metal level 4, have and reduce cost and excellent Electronic Performance can be provided, and high reflection, the advantage of high heat-conducting area characteristic;
Wherein, the supporting body 1 of unitary plastic ejection formation is with the interface layer 2 of electroless plating nickel deposited or copper metal, also again utilize laser to form insulated circuit 3 in the reflector 13 thereafter, so that the interface layer 2 of part is peeled off, again with plating or chemical deposition conductor metal be deposited on interface layer 2 on to form metal level 4 thereafter, like this then finish the bearing structure of an insulated circuit 3 extended loops around supporting body 1, as shown in Figure 5; If supporting body 1 has side arm 11, at last again via segmentation procedure with side arm 11 with cut apart, cutting or punching mode separate supporting body 1, make side arm 11 and the face that sticks together 16, the front insulated circuit 31 of supporting body 1 supporting body 1 be separated formation anodal 14 and negative pole 15 with back side insulated circuit 32, simultaneously reflector 13 is separated formation anodal 14 and negative pole 15 to constitute bearing structure, as shown in figure 11.
The preparation method's of plastic electronic component structure of the present invention preferred embodiment, it is as Figure 15 and shown in Figure 16, it comprises plastics in regular turn and penetrates steps such as step S1, electroless plating step S2, laser isolation step S3, plating step S4 and segmentation procedure S5, with the making of the bearing structure of finishing the aforementioned electronic element, the present invention is defined as SPL process (Single-shot Plating and Laser) processing procedure with this preparation method:
Plastics penetrate step S1, provide at least one supporting body 1 or at least one side to extend to form the supporting body 1 that has a side arm 11 at least, this supporting body 1 is by plastics or the emitted moulding of polymeric liquid crystal copolymer material, and wherein these plastics are mainly PA (Polyamide), polybutylene terephthalate (PBT), PET, LCP, PC, ABS, PC/ABS etc.;
And wherein this supporting body 1 is for comprising the plastics that mix metal solvent in advance or comprising that to mix organic plastics in advance obtained, and this metal solvent or organic substance mainly comprise palladium, copper, silver, iron etc.; Or this supporting body 1 is not for having the plastics that mix metal solvent or not having that to mix organic plastics obtained.
Electroless plating step S2 forms interface layer 2, and covers this supporting body 1 on this supporting body 1, after aforementioned plastics penetrate step S1, promptly produce the supporting body 1 of electronic component stock; This supporting body 1 as for comprising the plastics that mix metal solvent in advance or comprising that to mix organic plastics in advance obtained, take second place, then by etching or blasting treatment and activation processing before the electroless plating, allow supporting body 1 surface deposition chemical nickel or copper metal interface layer 2.This supporting body 1 as for not having the plastics that mix metal solvent or not having that to mix organic plastics obtained, take second place, then can pass through the electroless plating pre-treatment, use the method for preimpregnation (Pre-Dip), chemical etching or sandblast to make surface roughening, in addition it, supporting body 1 surface imposes catalystization and carries out activation step at last again, then enters electroless plating, to allow supporting body 1 surface deposition chemical nickel or copper metal; As shown in figure 15, make surface roughening for the method for using chemical etching or sandblast; And shown in Figure 16, for the method for using preimpregnation, chemical etching or sandblast makes surface roughening.
Laser isolation step S3 forms insulated circuit 3 in this interface layer 2; Peel off in the local interface layer 2 of upper surface, side surface and lower surface with laser when 11 of supporting body 1 no side arms, make and form the insulated circuit 3 of extended loop on the supporting body 1, as shown in Figure 3 and Figure 4 around supporting body 1; When supporting body 1 at least one side extends to form at least one side arm 11, then form front insulated circuits 31, back side insulated circuit 32 in interface layer 2, this front insulated circuit 31 and back side insulated circuit 32 for by the interface layer 2 on laser lift-off supporting body 1 surface and the edge that extends beyond supporting body 1 in the surf zone of side arm 11; It is after deposition is established in the plating of finishing interface layer 2, the present invention is for forming imperceptible insulated circuit 3, be to adopt laser to carry out peeling off of local interface layer 2 to form insulated circuit 3, design to reach freely, circuit granular and the simple and easy and diversified production procedure of processing procedure, it utilizes electronic laser bundle (Laser Beam) that local interface layer 2 in insulated circuit 3 patterns that form according to design requirement institute desire in the reflector 13 is peeled off, and this laser is mainly carbon dioxide (CO 2) laser, the refined chromium of rubidium (Nd:YAG) laser, Nd-doped yttrium vanadate (Nd:YVO4) crystal laser, quasi-molecule (Excimer) laser etc. selects for use, subsequently and can be on the interface layer 2 that forms insulated circuit 3 according to demand.
Plating step S4 forms metal level 4 in this interface layer 2, and finishes the making of this electronic component structure; For utilizing any one formed electroplating bath processing procedure depositing metal layers 4 of the group that plating and chemical depositing copper, nickel, silver, gold, chromium, chemical replacement gold etc. are constituted, and formed part will be sticked together usefulness with routing as luminescence chip, and can improve reflectivity and conductor, so can finish the bearing structure of the electronic component of no side arm 11 supporting bodies 1.
Segmentation procedure S5, if supporting body 1 has side arm 11 The that side arm 11 is cut apart, the face that sticks together 16, front insulated circuit 31 that makes 1 of side arm 11 and supporting body and back side insulated circuit 32 with supporting body 1 separate form anodal 14 with negative pole 15 with the formation bearing structure.
The present invention penetrates formed plastics supporting body 1, not only be used for light-emitting diode chip for backlight unit adhesion, routing then, reflector 13 structures, metal level 4 depositions, SMD sticks together and laser lift-off forms insulated circuit 3, more can link metal level 4 with reflector 13 and form related application such as large tracts of land radiator structure, this innovative design has the production cost of improvement and free design characteristic.
Above-listed detailed description is at the specifying of possible embodiments of the present invention, and this embodiment is not in order to limiting claim of the present invention, and the equivalence that all the present invention of disengaging do is implemented or change, all should be contained in the claim of this case.

Claims (15)

1. the bearing structure of an electronic component is characterized in that: include
Supporting body;
Interface layer is deposited on the surface of supporting body with electroless plating;
Insulated circuit, with the local interface layer of laser lift-off to form required insulated circuit;
Metal level, with electroplate or chemical method deposited conductor metal on interface layer.
2. the bearing structure of electronic component as claimed in claim 1, it is characterized in that: described supporting body is to comprise the plastics that mix metal solvent in advance or comprise that to mix organic plastics in advance obtained, and then this supporting body comprises and uses chemical etching or sandblast to make surface roughening, imposes the activation step before the electroless plating processing procedure again.
3. the bearing structure of electronic component as claimed in claim 1, it is characterized in that: described supporting body is not for having the plastics mix metal solvent or not having that to mix organic plastics obtained, and then this supporting body comprises that use preimpregnation, chemical etching or sandblast make surface roughening, impose catalystization again, carry out the preceding activation step of electroless plating processing procedure thereafter again.
4. the bearing structure of electronic component as claimed in claim 1 is characterized in that: described supporting body is included in the surface, and down sloping reflector is forming reflector, and this supporting body surface is between 15 degree～85 are spent with the angle that reflecting surface defines.
5. the bearing structure of electronic component as claimed in claim 1, it is characterized in that: form interface layer on the described supporting body and utilize laser that the local interface layer of supporting body upper surface, side surface and lower surface is peeled off, make and form insulated circuit on the supporting body, and this insulated circuit separates formation positive pole and negative pole with supporting body.
6. the bearing structure of electronic component as claimed in claim 1, it is characterized in that: its at least one side of described supporting body extends to form at least one side arm, and on the described supporting body and then comprise the deposition interface layer, again utilize laser that the interface layer of part is peeled off, make and form front insulated circuit, back side insulated circuit in supporting body and the side arm thereafter.
7. the bearing structure of electronic component as claimed in claim 6, it is characterized in that: on the described Cheng Zai Ti With side arm what interface layer again behind the depositing metal layers, this supporting body is cut apart side arm, makes the face that sticks together, front insulated circuit and back side insulated circuit between side arm and the supporting body that supporting body is separated formation positive pole and negative pole.
8. the preparation method of the bearing structure of an electronic component is characterized in that, its step includes:
Plastics penetrate step, and at least one supporting body is provided;
The electroless plating step forms interface layer on this supporting body;
The laser isolation step is peeled off the formation insulated circuit in the local interface layer of this supporting body upper surface, side surface and lower surface;
Plating step forms metal level on this interface layer;
Segmentation procedure is cut apart side arm, and finishes the making of this plastic electronic structure.
9. the preparation method of the bearing structure of an electronic component is characterized in that, its step includes:
Plastics penetrate step, provide at least one side to extend to form the supporting body of at least one side arm;
The electroless plating step forms interface layer on this supporting body and side arm, and covers this supporting body and side arm;
The laser isolation step is peeled off formation front insulated circuit, back side insulated circuit in the local interface layer of this supporting body and side arm;
Plating step forms metal level on this interface layer;
Segmentation procedure cuts apart side arm with the formation bearing structure, and finishes the making of this plastic electronic structure.
10. the preparation method of the bearing structure of electronic component as claimed in claim 9 is characterized in that: described holding
Carrier is served as reasons to mix and is comprised the supporting body of metal solvent plastics or organic plastic formation.
11. the preparation method of the bearing structure of electronic component as claimed in claim 9 is characterized in that: described supporting body is not for having the plastics that mix metal solvent or not having and mix the supporting body that organic plastics form.
12. the preparation method of the bearing structure of electronic component as claimed in claim 9, it is characterized in that: described supporting body comprises the surface roughening that uses preimpregnation, chemical etching or sandblast to make supporting body, impose catalystization again, carry out the preceding activation step of electroless plating processing procedure thereafter again.
13. the preparation method of the bearing structure of electronic component as claimed in claim 9 is characterized in that: described electroless plating step is included in the supporting body surface that activated and forms one deck chemical nickel or copper metal interface layer.
14. the preparation method of the bearing structure of electronic component as claimed in claim 9 is characterized in that: described laser isolation step be mainly by the interface layer on laser lift-off supporting body surface and the edge that extends beyond supporting body in the surf zone of side arm to constitute front insulated circuit and back side insulated circuit.
15. the preparation method of the bearing structure of electronic component as claimed in claim 9, it is characterized in that: described segmentation procedure makes the face that sticks together, front insulated circuit and back side insulated circuit between side arm and supporting body that supporting body is separated formation positive pole and negative pole for side arm is cut apart.
CN200910203568.2A 2009-05-18 2009-05-18 Bearing structure of electronic component and preparation method thereof Expired - Fee Related CN101894824B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103220884A (en) * 2012-01-18 2013-07-24 光宏精密股份有限公司 Line substrate structure and manufacturing method thereof
CN105092662A (en) * 2014-05-20 2015-11-25 光宏精密股份有限公司 Electrochemical sensing test piece and making method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407411B1 (en) * 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly
CN1700481A (en) * 2004-05-18 2005-11-23 亿光电子工业股份有限公司 Packaging structure and method of LED
CN1757108A (en) * 2003-02-28 2006-04-05 奥斯兰姆奥普托普导体有限责任公司 Optoelectronic device with patterned-metallized package body, method for producing such a device and method for the patterned metallization of a plastic-containing body
CN2840330Y (en) * 2005-05-30 2006-11-22 亿光电子工业股份有限公司 Light-emitting diode package structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407411B1 (en) * 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly
CN1757108A (en) * 2003-02-28 2006-04-05 奥斯兰姆奥普托普导体有限责任公司 Optoelectronic device with patterned-metallized package body, method for producing such a device and method for the patterned metallization of a plastic-containing body
CN1700481A (en) * 2004-05-18 2005-11-23 亿光电子工业股份有限公司 Packaging structure and method of LED
CN2840330Y (en) * 2005-05-30 2006-11-22 亿光电子工业股份有限公司 Light-emitting diode package structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103220884A (en) * 2012-01-18 2013-07-24 光宏精密股份有限公司 Line substrate structure and manufacturing method thereof
CN105092662A (en) * 2014-05-20 2015-11-25 光宏精密股份有限公司 Electrochemical sensing test piece and making method thereof

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